Effects of annealing conditions on the electrical properties of $ Bi_{4-x} %$ Nd_{x} %$ Ti_{3} %$ O_{12} $ (x = 0.46) thin films processed at low temperature

Abstract Neodymium-substituted $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BNdT) thin films were prepared by a chemical solution deposition technique on platinum- coated silicon substrates. All of the samples were annealed at the relatively low temperature of 600 °C by a rapid thermal annealing process in diffe...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Kim, J.K. [verfasserIn] Kim, S.S. Kim, W.-J.

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2005

Schlagwörter:	Oxygen Vacancy Rapid Thermal Annealing Chemical Solution Deposition Good Fatigue Annealing Atmosphere

Anmerkung:	© Springer-Verlag 2005

Übergeordnetes Werk:	Enthalten in: Applied physics - Berlin : Springer, 1973, 82(2005), 4 vom: 06. Dez., Seite 737-740
Übergeordnetes Werk:	volume:82 ; year:2005 ; number:4 ; day:06 ; month:12 ; pages:737-740

Links:	Volltext

DOI / URN:	10.1007/s00339-005-3457-0

Katalog-ID:	SPR004089278

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245	1	0	\|a Effects of annealing conditions on the electrical properties of $ Bi_{4-x} %$ Nd_{x} %$ Ti_{3} %$ O_{12} $ (x = 0.46) thin films processed at low temperature
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520			\|a Abstract Neodymium-substituted $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BNdT) thin films were prepared by a chemical solution deposition technique on platinum- coated silicon substrates. All of the samples were annealed at the relatively low temperature of 600 °C by a rapid thermal annealing process in different atmospheres, such as $ O_{2} $, air, and nitrogen, and vacuum. Irrespective of different annealing atmospheres, all of the BNdT thin films exhibit good ferroelectric properties, such as a saturated hysteresis loop, good fatigue endurance, and low leakage current density. A large remanent polarization ($ P_{r} $) of ∼48 μC/$ cm^{2} $ with an electric field of 240 kV/cm was observed from the BNdT thin film annealed in $ O_{2} $ atmosphere. The BNdT thin films annealed in nitrogen and vacuum, at reduced oxygen partial pressures, exhibit smaller $ P_{r} $ than that annealed in oxygen. The difference of $ P_{r} $ of the BNdT thin films annealed in different atmospheres may originate from differences in the grain sizes and the number of oxygen vacancies.
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700	1		\|a Kim, W.-J. \|4 aut
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912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_206
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_250
912			\|a GBV_ILN_267
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2031
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2039
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2056
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2070
912			\|a GBV_ILN_2086
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2107
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2116
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912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4334
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912			\|a GBV_ILN_4336
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matchkey_str	article:14320630:2005----::fetoanaigodtosnheetiapoeteob_xdxi3_206hn
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allfields	10.1007/s00339-005-3457-0 doi (DE-627)SPR004089278 (SPR)s00339-005-3457-0-e DE-627 ger DE-627 rakwb eng Kim, J.K. verfasserin aut Effects of annealing conditions on the electrical properties of $ Bi_{4-x} %$ Nd_{x} %$ Ti_{3} %$ O_{12} $ (x = 0.46) thin films processed at low temperature 2005 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2005 Abstract Neodymium-substituted $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BNdT) thin films were prepared by a chemical solution deposition technique on platinum- coated silicon substrates. All of the samples were annealed at the relatively low temperature of 600 °C by a rapid thermal annealing process in different atmospheres, such as $ O_{2} $, air, and nitrogen, and vacuum. Irrespective of different annealing atmospheres, all of the BNdT thin films exhibit good ferroelectric properties, such as a saturated hysteresis loop, good fatigue endurance, and low leakage current density. A large remanent polarization ($ P_{r} $) of ∼48 μC/$ cm^{2} $ with an electric field of 240 kV/cm was observed from the BNdT thin film annealed in $ O_{2} $ atmosphere. The BNdT thin films annealed in nitrogen and vacuum, at reduced oxygen partial pressures, exhibit smaller $ P_{r} $ than that annealed in oxygen. The difference of $ P_{r} $ of the BNdT thin films annealed in different atmospheres may originate from differences in the grain sizes and the number of oxygen vacancies. Oxygen Vacancy (dpeaa)DE-He213 Rapid Thermal Annealing (dpeaa)DE-He213 Chemical Solution Deposition (dpeaa)DE-He213 Good Fatigue (dpeaa)DE-He213 Annealing Atmosphere (dpeaa)DE-He213 Kim, S.S. aut Kim, W.-J. aut Enthalten in Applied physics Berlin : Springer, 1973 82(2005), 4 vom: 06. Dez., Seite 737-740 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:82 year:2005 number:4 day:06 month:12 pages:737-740 https://dx.doi.org/10.1007/s00339-005-3457-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 82 2005 4 06 12 737-740
spelling	10.1007/s00339-005-3457-0 doi (DE-627)SPR004089278 (SPR)s00339-005-3457-0-e DE-627 ger DE-627 rakwb eng Kim, J.K. verfasserin aut Effects of annealing conditions on the electrical properties of $ Bi_{4-x} %$ Nd_{x} %$ Ti_{3} %$ O_{12} $ (x = 0.46) thin films processed at low temperature 2005 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2005 Abstract Neodymium-substituted $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BNdT) thin films were prepared by a chemical solution deposition technique on platinum- coated silicon substrates. All of the samples were annealed at the relatively low temperature of 600 °C by a rapid thermal annealing process in different atmospheres, such as $ O_{2} $, air, and nitrogen, and vacuum. Irrespective of different annealing atmospheres, all of the BNdT thin films exhibit good ferroelectric properties, such as a saturated hysteresis loop, good fatigue endurance, and low leakage current density. A large remanent polarization ($ P_{r} $) of ∼48 μC/$ cm^{2} $ with an electric field of 240 kV/cm was observed from the BNdT thin film annealed in $ O_{2} $ atmosphere. The BNdT thin films annealed in nitrogen and vacuum, at reduced oxygen partial pressures, exhibit smaller $ P_{r} $ than that annealed in oxygen. The difference of $ P_{r} $ of the BNdT thin films annealed in different atmospheres may originate from differences in the grain sizes and the number of oxygen vacancies. Oxygen Vacancy (dpeaa)DE-He213 Rapid Thermal Annealing (dpeaa)DE-He213 Chemical Solution Deposition (dpeaa)DE-He213 Good Fatigue (dpeaa)DE-He213 Annealing Atmosphere (dpeaa)DE-He213 Kim, S.S. aut Kim, W.-J. aut Enthalten in Applied physics Berlin : Springer, 1973 82(2005), 4 vom: 06. Dez., Seite 737-740 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:82 year:2005 number:4 day:06 month:12 pages:737-740 https://dx.doi.org/10.1007/s00339-005-3457-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 82 2005 4 06 12 737-740
allfields_unstemmed	10.1007/s00339-005-3457-0 doi (DE-627)SPR004089278 (SPR)s00339-005-3457-0-e DE-627 ger DE-627 rakwb eng Kim, J.K. verfasserin aut Effects of annealing conditions on the electrical properties of $ Bi_{4-x} %$ Nd_{x} %$ Ti_{3} %$ O_{12} $ (x = 0.46) thin films processed at low temperature 2005 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2005 Abstract Neodymium-substituted $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BNdT) thin films were prepared by a chemical solution deposition technique on platinum- coated silicon substrates. All of the samples were annealed at the relatively low temperature of 600 °C by a rapid thermal annealing process in different atmospheres, such as $ O_{2} $, air, and nitrogen, and vacuum. Irrespective of different annealing atmospheres, all of the BNdT thin films exhibit good ferroelectric properties, such as a saturated hysteresis loop, good fatigue endurance, and low leakage current density. A large remanent polarization ($ P_{r} $) of ∼48 μC/$ cm^{2} $ with an electric field of 240 kV/cm was observed from the BNdT thin film annealed in $ O_{2} $ atmosphere. The BNdT thin films annealed in nitrogen and vacuum, at reduced oxygen partial pressures, exhibit smaller $ P_{r} $ than that annealed in oxygen. The difference of $ P_{r} $ of the BNdT thin films annealed in different atmospheres may originate from differences in the grain sizes and the number of oxygen vacancies. Oxygen Vacancy (dpeaa)DE-He213 Rapid Thermal Annealing (dpeaa)DE-He213 Chemical Solution Deposition (dpeaa)DE-He213 Good Fatigue (dpeaa)DE-He213 Annealing Atmosphere (dpeaa)DE-He213 Kim, S.S. aut Kim, W.-J. aut Enthalten in Applied physics Berlin : Springer, 1973 82(2005), 4 vom: 06. Dez., Seite 737-740 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:82 year:2005 number:4 day:06 month:12 pages:737-740 https://dx.doi.org/10.1007/s00339-005-3457-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 82 2005 4 06 12 737-740
allfieldsGer	10.1007/s00339-005-3457-0 doi (DE-627)SPR004089278 (SPR)s00339-005-3457-0-e DE-627 ger DE-627 rakwb eng Kim, J.K. verfasserin aut Effects of annealing conditions on the electrical properties of $ Bi_{4-x} %$ Nd_{x} %$ Ti_{3} %$ O_{12} $ (x = 0.46) thin films processed at low temperature 2005 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2005 Abstract Neodymium-substituted $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BNdT) thin films were prepared by a chemical solution deposition technique on platinum- coated silicon substrates. All of the samples were annealed at the relatively low temperature of 600 °C by a rapid thermal annealing process in different atmospheres, such as $ O_{2} $, air, and nitrogen, and vacuum. Irrespective of different annealing atmospheres, all of the BNdT thin films exhibit good ferroelectric properties, such as a saturated hysteresis loop, good fatigue endurance, and low leakage current density. A large remanent polarization ($ P_{r} $) of ∼48 μC/$ cm^{2} $ with an electric field of 240 kV/cm was observed from the BNdT thin film annealed in $ O_{2} $ atmosphere. The BNdT thin films annealed in nitrogen and vacuum, at reduced oxygen partial pressures, exhibit smaller $ P_{r} $ than that annealed in oxygen. The difference of $ P_{r} $ of the BNdT thin films annealed in different atmospheres may originate from differences in the grain sizes and the number of oxygen vacancies. Oxygen Vacancy (dpeaa)DE-He213 Rapid Thermal Annealing (dpeaa)DE-He213 Chemical Solution Deposition (dpeaa)DE-He213 Good Fatigue (dpeaa)DE-He213 Annealing Atmosphere (dpeaa)DE-He213 Kim, S.S. aut Kim, W.-J. aut Enthalten in Applied physics Berlin : Springer, 1973 82(2005), 4 vom: 06. Dez., Seite 737-740 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:82 year:2005 number:4 day:06 month:12 pages:737-740 https://dx.doi.org/10.1007/s00339-005-3457-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 82 2005 4 06 12 737-740
allfieldsSound	10.1007/s00339-005-3457-0 doi (DE-627)SPR004089278 (SPR)s00339-005-3457-0-e DE-627 ger DE-627 rakwb eng Kim, J.K. verfasserin aut Effects of annealing conditions on the electrical properties of $ Bi_{4-x} %$ Nd_{x} %$ Ti_{3} %$ O_{12} $ (x = 0.46) thin films processed at low temperature 2005 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2005 Abstract Neodymium-substituted $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BNdT) thin films were prepared by a chemical solution deposition technique on platinum- coated silicon substrates. All of the samples were annealed at the relatively low temperature of 600 °C by a rapid thermal annealing process in different atmospheres, such as $ O_{2} $, air, and nitrogen, and vacuum. Irrespective of different annealing atmospheres, all of the BNdT thin films exhibit good ferroelectric properties, such as a saturated hysteresis loop, good fatigue endurance, and low leakage current density. A large remanent polarization ($ P_{r} $) of ∼48 μC/$ cm^{2} $ with an electric field of 240 kV/cm was observed from the BNdT thin film annealed in $ O_{2} $ atmosphere. The BNdT thin films annealed in nitrogen and vacuum, at reduced oxygen partial pressures, exhibit smaller $ P_{r} $ than that annealed in oxygen. The difference of $ P_{r} $ of the BNdT thin films annealed in different atmospheres may originate from differences in the grain sizes and the number of oxygen vacancies. Oxygen Vacancy (dpeaa)DE-He213 Rapid Thermal Annealing (dpeaa)DE-He213 Chemical Solution Deposition (dpeaa)DE-He213 Good Fatigue (dpeaa)DE-He213 Annealing Atmosphere (dpeaa)DE-He213 Kim, S.S. aut Kim, W.-J. aut Enthalten in Applied physics Berlin : Springer, 1973 82(2005), 4 vom: 06. Dez., Seite 737-740 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:82 year:2005 number:4 day:06 month:12 pages:737-740 https://dx.doi.org/10.1007/s00339-005-3457-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 82 2005 4 06 12 737-740
language	English
source	Enthalten in Applied physics 82(2005), 4 vom: 06. Dez., Seite 737-740 volume:82 year:2005 number:4 day:06 month:12 pages:737-740
sourceStr	Enthalten in Applied physics 82(2005), 4 vom: 06. Dez., Seite 737-740 volume:82 year:2005 number:4 day:06 month:12 pages:737-740
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Oxygen Vacancy Rapid Thermal Annealing Chemical Solution Deposition Good Fatigue Annealing Atmosphere
isfreeaccess_bool	false
container_title	Applied physics
authorswithroles_txt_mv	Kim, J.K. @@aut@@ Kim, S.S. @@aut@@ Kim, W.-J. @@aut@@
publishDateDaySort_date	2005-12-06T00:00:00Z
hierarchy_top_id	235503231
id	SPR004089278
language_de	englisch
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author	Kim, J.K.
spellingShingle	Kim, J.K. misc Oxygen Vacancy misc Rapid Thermal Annealing misc Chemical Solution Deposition misc Good Fatigue misc Annealing Atmosphere Effects of annealing conditions on the electrical properties of $ Bi_{4-x} %$ Nd_{x} %$ Ti_{3} %$ O_{12} $ (x = 0.46) thin films processed at low temperature
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topic_title	Effects of annealing conditions on the electrical properties of $ Bi_{4-x} %$ Nd_{x} %$ Ti_{3} %$ O_{12} $ (x = 0.46) thin films processed at low temperature Oxygen Vacancy (dpeaa)DE-He213 Rapid Thermal Annealing (dpeaa)DE-He213 Chemical Solution Deposition (dpeaa)DE-He213 Good Fatigue (dpeaa)DE-He213 Annealing Atmosphere (dpeaa)DE-He213
topic	misc Oxygen Vacancy misc Rapid Thermal Annealing misc Chemical Solution Deposition misc Good Fatigue misc Annealing Atmosphere
topic_unstemmed	misc Oxygen Vacancy misc Rapid Thermal Annealing misc Chemical Solution Deposition misc Good Fatigue misc Annealing Atmosphere
topic_browse	misc Oxygen Vacancy misc Rapid Thermal Annealing misc Chemical Solution Deposition misc Good Fatigue misc Annealing Atmosphere
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
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title	Effects of annealing conditions on the electrical properties of $ Bi_{4-x} %$ Nd_{x} %$ Ti_{3} %$ O_{12} $ (x = 0.46) thin films processed at low temperature
ctrlnum	(DE-627)SPR004089278 (SPR)s00339-005-3457-0-e
title_full	Effects of annealing conditions on the electrical properties of $ Bi_{4-x} %$ Nd_{x} %$ Ti_{3} %$ O_{12} $ (x = 0.46) thin films processed at low temperature
author_sort	Kim, J.K.
journal	Applied physics
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author_browse	Kim, J.K. Kim, S.S. Kim, W.-J.
container_volume	82
format_se	Elektronische Aufsätze
author-letter	Kim, J.K.
doi_str_mv	10.1007/s00339-005-3457-0
title_sort	effects of annealing conditions on the electrical properties of $ bi_{4-x} %$ nd_{x} %$ ti_{3} %$ o_{12} $ (x = 0.46) thin films processed at low temperature
title_auth	Effects of annealing conditions on the electrical properties of $ Bi_{4-x} %$ Nd_{x} %$ Ti_{3} %$ O_{12} $ (x = 0.46) thin films processed at low temperature
abstract	Abstract Neodymium-substituted $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BNdT) thin films were prepared by a chemical solution deposition technique on platinum- coated silicon substrates. All of the samples were annealed at the relatively low temperature of 600 °C by a rapid thermal annealing process in different atmospheres, such as $ O_{2} $, air, and nitrogen, and vacuum. Irrespective of different annealing atmospheres, all of the BNdT thin films exhibit good ferroelectric properties, such as a saturated hysteresis loop, good fatigue endurance, and low leakage current density. A large remanent polarization ($ P_{r} $) of ∼48 μC/$ cm^{2} $ with an electric field of 240 kV/cm was observed from the BNdT thin film annealed in $ O_{2} $ atmosphere. The BNdT thin films annealed in nitrogen and vacuum, at reduced oxygen partial pressures, exhibit smaller $ P_{r} $ than that annealed in oxygen. The difference of $ P_{r} $ of the BNdT thin films annealed in different atmospheres may originate from differences in the grain sizes and the number of oxygen vacancies. © Springer-Verlag 2005
abstractGer	Abstract Neodymium-substituted $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BNdT) thin films were prepared by a chemical solution deposition technique on platinum- coated silicon substrates. All of the samples were annealed at the relatively low temperature of 600 °C by a rapid thermal annealing process in different atmospheres, such as $ O_{2} $, air, and nitrogen, and vacuum. Irrespective of different annealing atmospheres, all of the BNdT thin films exhibit good ferroelectric properties, such as a saturated hysteresis loop, good fatigue endurance, and low leakage current density. A large remanent polarization ($ P_{r} $) of ∼48 μC/$ cm^{2} $ with an electric field of 240 kV/cm was observed from the BNdT thin film annealed in $ O_{2} $ atmosphere. The BNdT thin films annealed in nitrogen and vacuum, at reduced oxygen partial pressures, exhibit smaller $ P_{r} $ than that annealed in oxygen. The difference of $ P_{r} $ of the BNdT thin films annealed in different atmospheres may originate from differences in the grain sizes and the number of oxygen vacancies. © Springer-Verlag 2005
abstract_unstemmed	Abstract Neodymium-substituted $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BNdT) thin films were prepared by a chemical solution deposition technique on platinum- coated silicon substrates. All of the samples were annealed at the relatively low temperature of 600 °C by a rapid thermal annealing process in different atmospheres, such as $ O_{2} $, air, and nitrogen, and vacuum. Irrespective of different annealing atmospheres, all of the BNdT thin films exhibit good ferroelectric properties, such as a saturated hysteresis loop, good fatigue endurance, and low leakage current density. A large remanent polarization ($ P_{r} $) of ∼48 μC/$ cm^{2} $ with an electric field of 240 kV/cm was observed from the BNdT thin film annealed in $ O_{2} $ atmosphere. The BNdT thin films annealed in nitrogen and vacuum, at reduced oxygen partial pressures, exhibit smaller $ P_{r} $ than that annealed in oxygen. The difference of $ P_{r} $ of the BNdT thin films annealed in different atmospheres may originate from differences in the grain sizes and the number of oxygen vacancies. © Springer-Verlag 2005
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container_issue	4
title_short	Effects of annealing conditions on the electrical properties of $ Bi_{4-x} %$ Nd_{x} %$ Ti_{3} %$ O_{12} $ (x = 0.46) thin films processed at low temperature
url	https://dx.doi.org/10.1007/s00339-005-3457-0
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up_date	2024-07-03T23:33:24.093Z
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fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR004089278</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230520012257.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201001s2005 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s00339-005-3457-0</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR004089278</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s00339-005-3457-0-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Kim, J.K.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Effects of annealing conditions on the electrical properties of $ Bi_{4-x} %$ Nd_{x} %$ Ti_{3} %$ O_{12} $ (x = 0.46) thin films processed at low temperature</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2005</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer-Verlag 2005</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Neodymium-substituted $ Bi_{4} %$ Ti_{3} %$ O_{12} $ (BNdT) thin films were prepared by a chemical solution deposition technique on platinum- coated silicon substrates. All of the samples were annealed at the relatively low temperature of 600 °C by a rapid thermal annealing process in different atmospheres, such as $ O_{2} $, air, and nitrogen, and vacuum. Irrespective of different annealing atmospheres, all of the BNdT thin films exhibit good ferroelectric properties, such as a saturated hysteresis loop, good fatigue endurance, and low leakage current density. A large remanent polarization ($ P_{r} $) of ∼48 μC/$ cm^{2} $ with an electric field of 240 kV/cm was observed from the BNdT thin film annealed in $ O_{2} $ atmosphere. The BNdT thin films annealed in nitrogen and vacuum, at reduced oxygen partial pressures, exhibit smaller $ P_{r} $ than that annealed in oxygen. 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Effects of annealing conditions on the electrical properties of $ Bi_{4-x} %$ Nd_{x} %$ Ti_{3} %$ O_{12} $ (x = 0.46) thin films processed at low temperature

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