Enhancement of polarization in bismuth titanate thin films co-modified by La and Nd for non-volatile memory applications

Abstract Bismuth titanate thin films co-modified by La and Nd, $ Bi_{3.15} $($ La_{0.425} %$ Nd_{0.425} $)$ Ti_{3} %$ O_{12} $ (BLNT) were grown on Pt/Ti/$ SiO_{2} $/Si(100) substrates by metalorganic solution decomposition method. The co-substitution leads to structural distortion with enhanced rem...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Giridharan, N.V. [verfasserIn] Subramanian, M. Jayavel, R.

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2006

Schlagwörter:	Remanent Polarization Switching Cycle Bismuth Titanate Switching Curve Titanate Thin Film

Anmerkung:	© Springer-Verlag 2005

Übergeordnetes Werk:	Enthalten in: Applied physics - Berlin : Springer, 1973, 83(2006), 1 vom: 17. Jan., Seite 123-126
Übergeordnetes Werk:	volume:83 ; year:2006 ; number:1 ; day:17 ; month:01 ; pages:123-126

Links:	Volltext

DOI / URN:	10.1007/s00339-005-3469-9

Katalog-ID:	SPR004089472

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100	1		\|a Giridharan, N.V. \|e verfasserin \|4 aut
245	1	0	\|a Enhancement of polarization in bismuth titanate thin films co-modified by La and Nd for non-volatile memory applications
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520			\|a Abstract Bismuth titanate thin films co-modified by La and Nd, $ Bi_{3.15} $($ La_{0.425} %$ Nd_{0.425} $)$ Ti_{3} %$ O_{12} $ (BLNT) were grown on Pt/Ti/$ SiO_{2} $/Si(100) substrates by metalorganic solution decomposition method. The co-substitution leads to structural distortion with enhanced remanent polarization. The BLNT film capacitor with a top Pt electrode showed a large remanent polarization ($ 2P_{r} $) of 90 μC/$ cm^{2} $ at an applied voltage of 10 V, which is higher than that of highly c-axis oriented BLT, and comparable with BNdT thin films. The BLNT films exhibited a fatigue-free behavior up to 1×$ 10^{9} $ switching cycles at a frequency of 1 kHz. These experimental results reveal that BLNT thin films can be used as capacitors in ferroelectric random access memory applications.
650		4	\|a Remanent Polarization \|7 (dpeaa)DE-He213
650		4	\|a Switching Cycle \|7 (dpeaa)DE-He213
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650		4	\|a Switching Curve \|7 (dpeaa)DE-He213
650		4	\|a Titanate Thin Film \|7 (dpeaa)DE-He213
700	1		\|a Subramanian, M. \|4 aut
700	1		\|a Jayavel, R. \|4 aut
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856	4	0	\|u https://dx.doi.org/10.1007/s00339-005-3469-9 \|z lizenzpflichtig \|3 Volltext
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912			\|a GBV_ILN_110
912			\|a GBV_ILN_120
912			\|a GBV_ILN_138
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_206
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_250
912			\|a GBV_ILN_267
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2031
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2039
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2056
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2070
912			\|a GBV_ILN_2086
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2107
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2116
912			\|a GBV_ILN_2118
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912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
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912			\|a GBV_ILN_2152
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912			\|a GBV_ILN_2188
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912			\|a GBV_ILN_2548
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matchkey_str	article:14320630:2006----::nacmnoplrztoibsuhiaaehnimcmdfebladdon
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publishDate	2006
allfields	10.1007/s00339-005-3469-9 doi (DE-627)SPR004089472 (SPR)s00339-005-3469-9-e DE-627 ger DE-627 rakwb eng Giridharan, N.V. verfasserin aut Enhancement of polarization in bismuth titanate thin films co-modified by La and Nd for non-volatile memory applications 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2005 Abstract Bismuth titanate thin films co-modified by La and Nd, $ Bi_{3.15} $($ La_{0.425} %$ Nd_{0.425} $)$ Ti_{3} %$ O_{12} $ (BLNT) were grown on Pt/Ti/$ SiO_{2} $/Si(100) substrates by metalorganic solution decomposition method. The co-substitution leads to structural distortion with enhanced remanent polarization. The BLNT film capacitor with a top Pt electrode showed a large remanent polarization ($ 2P_{r} $) of 90 μC/$ cm^{2} $ at an applied voltage of 10 V, which is higher than that of highly c-axis oriented BLT, and comparable with BNdT thin films. The BLNT films exhibited a fatigue-free behavior up to 1×$ 10^{9} $ switching cycles at a frequency of 1 kHz. These experimental results reveal that BLNT thin films can be used as capacitors in ferroelectric random access memory applications. Remanent Polarization (dpeaa)DE-He213 Switching Cycle (dpeaa)DE-He213 Bismuth Titanate (dpeaa)DE-He213 Switching Curve (dpeaa)DE-He213 Titanate Thin Film (dpeaa)DE-He213 Subramanian, M. aut Jayavel, R. aut Enthalten in Applied physics Berlin : Springer, 1973 83(2006), 1 vom: 17. Jan., Seite 123-126 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:83 year:2006 number:1 day:17 month:01 pages:123-126 https://dx.doi.org/10.1007/s00339-005-3469-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 83 2006 1 17 01 123-126
spelling	10.1007/s00339-005-3469-9 doi (DE-627)SPR004089472 (SPR)s00339-005-3469-9-e DE-627 ger DE-627 rakwb eng Giridharan, N.V. verfasserin aut Enhancement of polarization in bismuth titanate thin films co-modified by La and Nd for non-volatile memory applications 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2005 Abstract Bismuth titanate thin films co-modified by La and Nd, $ Bi_{3.15} $($ La_{0.425} %$ Nd_{0.425} $)$ Ti_{3} %$ O_{12} $ (BLNT) were grown on Pt/Ti/$ SiO_{2} $/Si(100) substrates by metalorganic solution decomposition method. The co-substitution leads to structural distortion with enhanced remanent polarization. The BLNT film capacitor with a top Pt electrode showed a large remanent polarization ($ 2P_{r} $) of 90 μC/$ cm^{2} $ at an applied voltage of 10 V, which is higher than that of highly c-axis oriented BLT, and comparable with BNdT thin films. The BLNT films exhibited a fatigue-free behavior up to 1×$ 10^{9} $ switching cycles at a frequency of 1 kHz. These experimental results reveal that BLNT thin films can be used as capacitors in ferroelectric random access memory applications. Remanent Polarization (dpeaa)DE-He213 Switching Cycle (dpeaa)DE-He213 Bismuth Titanate (dpeaa)DE-He213 Switching Curve (dpeaa)DE-He213 Titanate Thin Film (dpeaa)DE-He213 Subramanian, M. aut Jayavel, R. aut Enthalten in Applied physics Berlin : Springer, 1973 83(2006), 1 vom: 17. Jan., Seite 123-126 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:83 year:2006 number:1 day:17 month:01 pages:123-126 https://dx.doi.org/10.1007/s00339-005-3469-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 83 2006 1 17 01 123-126
allfields_unstemmed	10.1007/s00339-005-3469-9 doi (DE-627)SPR004089472 (SPR)s00339-005-3469-9-e DE-627 ger DE-627 rakwb eng Giridharan, N.V. verfasserin aut Enhancement of polarization in bismuth titanate thin films co-modified by La and Nd for non-volatile memory applications 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2005 Abstract Bismuth titanate thin films co-modified by La and Nd, $ Bi_{3.15} $($ La_{0.425} %$ Nd_{0.425} $)$ Ti_{3} %$ O_{12} $ (BLNT) were grown on Pt/Ti/$ SiO_{2} $/Si(100) substrates by metalorganic solution decomposition method. The co-substitution leads to structural distortion with enhanced remanent polarization. The BLNT film capacitor with a top Pt electrode showed a large remanent polarization ($ 2P_{r} $) of 90 μC/$ cm^{2} $ at an applied voltage of 10 V, which is higher than that of highly c-axis oriented BLT, and comparable with BNdT thin films. The BLNT films exhibited a fatigue-free behavior up to 1×$ 10^{9} $ switching cycles at a frequency of 1 kHz. These experimental results reveal that BLNT thin films can be used as capacitors in ferroelectric random access memory applications. Remanent Polarization (dpeaa)DE-He213 Switching Cycle (dpeaa)DE-He213 Bismuth Titanate (dpeaa)DE-He213 Switching Curve (dpeaa)DE-He213 Titanate Thin Film (dpeaa)DE-He213 Subramanian, M. aut Jayavel, R. aut Enthalten in Applied physics Berlin : Springer, 1973 83(2006), 1 vom: 17. Jan., Seite 123-126 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:83 year:2006 number:1 day:17 month:01 pages:123-126 https://dx.doi.org/10.1007/s00339-005-3469-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 83 2006 1 17 01 123-126
allfieldsGer	10.1007/s00339-005-3469-9 doi (DE-627)SPR004089472 (SPR)s00339-005-3469-9-e DE-627 ger DE-627 rakwb eng Giridharan, N.V. verfasserin aut Enhancement of polarization in bismuth titanate thin films co-modified by La and Nd for non-volatile memory applications 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2005 Abstract Bismuth titanate thin films co-modified by La and Nd, $ Bi_{3.15} $($ La_{0.425} %$ Nd_{0.425} $)$ Ti_{3} %$ O_{12} $ (BLNT) were grown on Pt/Ti/$ SiO_{2} $/Si(100) substrates by metalorganic solution decomposition method. The co-substitution leads to structural distortion with enhanced remanent polarization. The BLNT film capacitor with a top Pt electrode showed a large remanent polarization ($ 2P_{r} $) of 90 μC/$ cm^{2} $ at an applied voltage of 10 V, which is higher than that of highly c-axis oriented BLT, and comparable with BNdT thin films. The BLNT films exhibited a fatigue-free behavior up to 1×$ 10^{9} $ switching cycles at a frequency of 1 kHz. These experimental results reveal that BLNT thin films can be used as capacitors in ferroelectric random access memory applications. Remanent Polarization (dpeaa)DE-He213 Switching Cycle (dpeaa)DE-He213 Bismuth Titanate (dpeaa)DE-He213 Switching Curve (dpeaa)DE-He213 Titanate Thin Film (dpeaa)DE-He213 Subramanian, M. aut Jayavel, R. aut Enthalten in Applied physics Berlin : Springer, 1973 83(2006), 1 vom: 17. Jan., Seite 123-126 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:83 year:2006 number:1 day:17 month:01 pages:123-126 https://dx.doi.org/10.1007/s00339-005-3469-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 83 2006 1 17 01 123-126
allfieldsSound	10.1007/s00339-005-3469-9 doi (DE-627)SPR004089472 (SPR)s00339-005-3469-9-e DE-627 ger DE-627 rakwb eng Giridharan, N.V. verfasserin aut Enhancement of polarization in bismuth titanate thin films co-modified by La and Nd for non-volatile memory applications 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2005 Abstract Bismuth titanate thin films co-modified by La and Nd, $ Bi_{3.15} $($ La_{0.425} %$ Nd_{0.425} $)$ Ti_{3} %$ O_{12} $ (BLNT) were grown on Pt/Ti/$ SiO_{2} $/Si(100) substrates by metalorganic solution decomposition method. The co-substitution leads to structural distortion with enhanced remanent polarization. The BLNT film capacitor with a top Pt electrode showed a large remanent polarization ($ 2P_{r} $) of 90 μC/$ cm^{2} $ at an applied voltage of 10 V, which is higher than that of highly c-axis oriented BLT, and comparable with BNdT thin films. The BLNT films exhibited a fatigue-free behavior up to 1×$ 10^{9} $ switching cycles at a frequency of 1 kHz. These experimental results reveal that BLNT thin films can be used as capacitors in ferroelectric random access memory applications. Remanent Polarization (dpeaa)DE-He213 Switching Cycle (dpeaa)DE-He213 Bismuth Titanate (dpeaa)DE-He213 Switching Curve (dpeaa)DE-He213 Titanate Thin Film (dpeaa)DE-He213 Subramanian, M. aut Jayavel, R. aut Enthalten in Applied physics Berlin : Springer, 1973 83(2006), 1 vom: 17. Jan., Seite 123-126 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:83 year:2006 number:1 day:17 month:01 pages:123-126 https://dx.doi.org/10.1007/s00339-005-3469-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 83 2006 1 17 01 123-126
language	English
source	Enthalten in Applied physics 83(2006), 1 vom: 17. Jan., Seite 123-126 volume:83 year:2006 number:1 day:17 month:01 pages:123-126
sourceStr	Enthalten in Applied physics 83(2006), 1 vom: 17. Jan., Seite 123-126 volume:83 year:2006 number:1 day:17 month:01 pages:123-126
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Remanent Polarization Switching Cycle Bismuth Titanate Switching Curve Titanate Thin Film
isfreeaccess_bool	false
container_title	Applied physics
authorswithroles_txt_mv	Giridharan, N.V. @@aut@@ Subramanian, M. @@aut@@ Jayavel, R. @@aut@@
publishDateDaySort_date	2006-01-17T00:00:00Z
hierarchy_top_id	235503231
id	SPR004089472
language_de	englisch
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author	Giridharan, N.V.
spellingShingle	Giridharan, N.V. misc Remanent Polarization misc Switching Cycle misc Bismuth Titanate misc Switching Curve misc Titanate Thin Film Enhancement of polarization in bismuth titanate thin films co-modified by La and Nd for non-volatile memory applications
authorStr	Giridharan, N.V.
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topic_title	Enhancement of polarization in bismuth titanate thin films co-modified by La and Nd for non-volatile memory applications Remanent Polarization (dpeaa)DE-He213 Switching Cycle (dpeaa)DE-He213 Bismuth Titanate (dpeaa)DE-He213 Switching Curve (dpeaa)DE-He213 Titanate Thin Film (dpeaa)DE-He213
topic	misc Remanent Polarization misc Switching Cycle misc Bismuth Titanate misc Switching Curve misc Titanate Thin Film
topic_unstemmed	misc Remanent Polarization misc Switching Cycle misc Bismuth Titanate misc Switching Curve misc Titanate Thin Film
topic_browse	misc Remanent Polarization misc Switching Cycle misc Bismuth Titanate misc Switching Curve misc Titanate Thin Film
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
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title	Enhancement of polarization in bismuth titanate thin films co-modified by La and Nd for non-volatile memory applications
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title_full	Enhancement of polarization in bismuth titanate thin films co-modified by La and Nd for non-volatile memory applications
author_sort	Giridharan, N.V.
journal	Applied physics
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author_browse	Giridharan, N.V. Subramanian, M. Jayavel, R.
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author-letter	Giridharan, N.V.
doi_str_mv	10.1007/s00339-005-3469-9
title_sort	enhancement of polarization in bismuth titanate thin films co-modified by la and nd for non-volatile memory applications
title_auth	Enhancement of polarization in bismuth titanate thin films co-modified by La and Nd for non-volatile memory applications
abstract	Abstract Bismuth titanate thin films co-modified by La and Nd, $ Bi_{3.15} $($ La_{0.425} %$ Nd_{0.425} $)$ Ti_{3} %$ O_{12} $ (BLNT) were grown on Pt/Ti/$ SiO_{2} $/Si(100) substrates by metalorganic solution decomposition method. The co-substitution leads to structural distortion with enhanced remanent polarization. The BLNT film capacitor with a top Pt electrode showed a large remanent polarization ($ 2P_{r} $) of 90 μC/$ cm^{2} $ at an applied voltage of 10 V, which is higher than that of highly c-axis oriented BLT, and comparable with BNdT thin films. The BLNT films exhibited a fatigue-free behavior up to 1×$ 10^{9} $ switching cycles at a frequency of 1 kHz. These experimental results reveal that BLNT thin films can be used as capacitors in ferroelectric random access memory applications. © Springer-Verlag 2005
abstractGer	Abstract Bismuth titanate thin films co-modified by La and Nd, $ Bi_{3.15} $($ La_{0.425} %$ Nd_{0.425} $)$ Ti_{3} %$ O_{12} $ (BLNT) were grown on Pt/Ti/$ SiO_{2} $/Si(100) substrates by metalorganic solution decomposition method. The co-substitution leads to structural distortion with enhanced remanent polarization. The BLNT film capacitor with a top Pt electrode showed a large remanent polarization ($ 2P_{r} $) of 90 μC/$ cm^{2} $ at an applied voltage of 10 V, which is higher than that of highly c-axis oriented BLT, and comparable with BNdT thin films. The BLNT films exhibited a fatigue-free behavior up to 1×$ 10^{9} $ switching cycles at a frequency of 1 kHz. These experimental results reveal that BLNT thin films can be used as capacitors in ferroelectric random access memory applications. © Springer-Verlag 2005
abstract_unstemmed	Abstract Bismuth titanate thin films co-modified by La and Nd, $ Bi_{3.15} $($ La_{0.425} %$ Nd_{0.425} $)$ Ti_{3} %$ O_{12} $ (BLNT) were grown on Pt/Ti/$ SiO_{2} $/Si(100) substrates by metalorganic solution decomposition method. The co-substitution leads to structural distortion with enhanced remanent polarization. The BLNT film capacitor with a top Pt electrode showed a large remanent polarization ($ 2P_{r} $) of 90 μC/$ cm^{2} $ at an applied voltage of 10 V, which is higher than that of highly c-axis oriented BLT, and comparable with BNdT thin films. The BLNT films exhibited a fatigue-free behavior up to 1×$ 10^{9} $ switching cycles at a frequency of 1 kHz. These experimental results reveal that BLNT thin films can be used as capacitors in ferroelectric random access memory applications. © Springer-Verlag 2005
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title_short	Enhancement of polarization in bismuth titanate thin films co-modified by La and Nd for non-volatile memory applications
url	https://dx.doi.org/10.1007/s00339-005-3469-9
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author2	Subramanian, M. Jayavel, R.
author2Str	Subramanian, M. Jayavel, R.
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doi_str	10.1007/s00339-005-3469-9
up_date	2024-07-03T23:33:27.850Z
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Enhancement of polarization in bismuth titanate thin films co-modified by La and Nd for non-volatile memory applications

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