Comparative study of textured diamond films by thermal conductivity measurements

Abstract Superior thermal conductivity, high resistance, high breakdown voltage and wide band gap make diamond an attractive material for a variety of applications in electronics. One of its most appealing applications is as a buried dielectric in silicon-on-diamond (SOD) technology. This paper pres...
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Gespeichert in:

Autor*in:	Govindaraju, N. [verfasserIn] Aleksov, A. Li, X. Okuzumi, F. Wolter, S.D. Collazo, R. Prater, J.T. Sitar, Z.

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2006

Schlagwörter:	Thermal Conductivity Diamond Film Lateral Thermal Conductivity Thermal Conductivity Measurement Nucleation Layer

Anmerkung:	© Springer-Verlag 2006

Übergeordnetes Werk:	Enthalten in: Applied physics - Berlin : Springer, 1973, 85(2006), 3 vom: 20. Sept., Seite 331-335
Übergeordnetes Werk:	volume:85 ; year:2006 ; number:3 ; day:20 ; month:09 ; pages:331-335

Links:	Volltext

DOI / URN:	10.1007/s00339-006-3697-7

Katalog-ID:	SPR004091663

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520			\|a Abstract Superior thermal conductivity, high resistance, high breakdown voltage and wide band gap make diamond an attractive material for a variety of applications in electronics. One of its most appealing applications is as a buried dielectric in silicon-on-diamond (SOD) technology. This paper presents thermal conductivity measurements conducted on a series of diamond films (grown by the microwave plasma chemical vapor deposition technique) as a function of the sample morphology and thickness, for eventual incorporation in the SOD structures. Results show that there is a significant difference in the measured thermal conductivity between samples with fiber texture and samples with sheet texture. Also, measurements performed on a 160-μm-thick diamond sample before and after reactive ion etching of approximately 10 μm of the nucleation layer show no significant change in the measured value of the thermal conductivity.
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allfields	10.1007/s00339-006-3697-7 doi (DE-627)SPR004091663 (SPR)s00339-006-3697-7-e DE-627 ger DE-627 rakwb eng Govindaraju, N. verfasserin aut Comparative study of textured diamond films by thermal conductivity measurements 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2006 Abstract Superior thermal conductivity, high resistance, high breakdown voltage and wide band gap make diamond an attractive material for a variety of applications in electronics. One of its most appealing applications is as a buried dielectric in silicon-on-diamond (SOD) technology. This paper presents thermal conductivity measurements conducted on a series of diamond films (grown by the microwave plasma chemical vapor deposition technique) as a function of the sample morphology and thickness, for eventual incorporation in the SOD structures. Results show that there is a significant difference in the measured thermal conductivity between samples with fiber texture and samples with sheet texture. Also, measurements performed on a 160-μm-thick diamond sample before and after reactive ion etching of approximately 10 μm of the nucleation layer show no significant change in the measured value of the thermal conductivity. Thermal Conductivity (dpeaa)DE-He213 Diamond Film (dpeaa)DE-He213 Lateral Thermal Conductivity (dpeaa)DE-He213 Thermal Conductivity Measurement (dpeaa)DE-He213 Nucleation Layer (dpeaa)DE-He213 Aleksov, A. aut Li, X. aut Okuzumi, F. aut Wolter, S.D. aut Collazo, R. aut Prater, J.T. aut Sitar, Z. aut Enthalten in Applied physics Berlin : Springer, 1973 85(2006), 3 vom: 20. Sept., Seite 331-335 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:85 year:2006 number:3 day:20 month:09 pages:331-335 https://dx.doi.org/10.1007/s00339-006-3697-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 85 2006 3 20 09 331-335
spelling	10.1007/s00339-006-3697-7 doi (DE-627)SPR004091663 (SPR)s00339-006-3697-7-e DE-627 ger DE-627 rakwb eng Govindaraju, N. verfasserin aut Comparative study of textured diamond films by thermal conductivity measurements 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2006 Abstract Superior thermal conductivity, high resistance, high breakdown voltage and wide band gap make diamond an attractive material for a variety of applications in electronics. One of its most appealing applications is as a buried dielectric in silicon-on-diamond (SOD) technology. This paper presents thermal conductivity measurements conducted on a series of diamond films (grown by the microwave plasma chemical vapor deposition technique) as a function of the sample morphology and thickness, for eventual incorporation in the SOD structures. Results show that there is a significant difference in the measured thermal conductivity between samples with fiber texture and samples with sheet texture. Also, measurements performed on a 160-μm-thick diamond sample before and after reactive ion etching of approximately 10 μm of the nucleation layer show no significant change in the measured value of the thermal conductivity. Thermal Conductivity (dpeaa)DE-He213 Diamond Film (dpeaa)DE-He213 Lateral Thermal Conductivity (dpeaa)DE-He213 Thermal Conductivity Measurement (dpeaa)DE-He213 Nucleation Layer (dpeaa)DE-He213 Aleksov, A. aut Li, X. aut Okuzumi, F. aut Wolter, S.D. aut Collazo, R. aut Prater, J.T. aut Sitar, Z. aut Enthalten in Applied physics Berlin : Springer, 1973 85(2006), 3 vom: 20. Sept., Seite 331-335 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:85 year:2006 number:3 day:20 month:09 pages:331-335 https://dx.doi.org/10.1007/s00339-006-3697-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 85 2006 3 20 09 331-335
allfields_unstemmed	10.1007/s00339-006-3697-7 doi (DE-627)SPR004091663 (SPR)s00339-006-3697-7-e DE-627 ger DE-627 rakwb eng Govindaraju, N. verfasserin aut Comparative study of textured diamond films by thermal conductivity measurements 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2006 Abstract Superior thermal conductivity, high resistance, high breakdown voltage and wide band gap make diamond an attractive material for a variety of applications in electronics. One of its most appealing applications is as a buried dielectric in silicon-on-diamond (SOD) technology. This paper presents thermal conductivity measurements conducted on a series of diamond films (grown by the microwave plasma chemical vapor deposition technique) as a function of the sample morphology and thickness, for eventual incorporation in the SOD structures. Results show that there is a significant difference in the measured thermal conductivity between samples with fiber texture and samples with sheet texture. Also, measurements performed on a 160-μm-thick diamond sample before and after reactive ion etching of approximately 10 μm of the nucleation layer show no significant change in the measured value of the thermal conductivity. Thermal Conductivity (dpeaa)DE-He213 Diamond Film (dpeaa)DE-He213 Lateral Thermal Conductivity (dpeaa)DE-He213 Thermal Conductivity Measurement (dpeaa)DE-He213 Nucleation Layer (dpeaa)DE-He213 Aleksov, A. aut Li, X. aut Okuzumi, F. aut Wolter, S.D. aut Collazo, R. aut Prater, J.T. aut Sitar, Z. aut Enthalten in Applied physics Berlin : Springer, 1973 85(2006), 3 vom: 20. Sept., Seite 331-335 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:85 year:2006 number:3 day:20 month:09 pages:331-335 https://dx.doi.org/10.1007/s00339-006-3697-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 85 2006 3 20 09 331-335
allfieldsGer	10.1007/s00339-006-3697-7 doi (DE-627)SPR004091663 (SPR)s00339-006-3697-7-e DE-627 ger DE-627 rakwb eng Govindaraju, N. verfasserin aut Comparative study of textured diamond films by thermal conductivity measurements 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2006 Abstract Superior thermal conductivity, high resistance, high breakdown voltage and wide band gap make diamond an attractive material for a variety of applications in electronics. One of its most appealing applications is as a buried dielectric in silicon-on-diamond (SOD) technology. This paper presents thermal conductivity measurements conducted on a series of diamond films (grown by the microwave plasma chemical vapor deposition technique) as a function of the sample morphology and thickness, for eventual incorporation in the SOD structures. Results show that there is a significant difference in the measured thermal conductivity between samples with fiber texture and samples with sheet texture. Also, measurements performed on a 160-μm-thick diamond sample before and after reactive ion etching of approximately 10 μm of the nucleation layer show no significant change in the measured value of the thermal conductivity. Thermal Conductivity (dpeaa)DE-He213 Diamond Film (dpeaa)DE-He213 Lateral Thermal Conductivity (dpeaa)DE-He213 Thermal Conductivity Measurement (dpeaa)DE-He213 Nucleation Layer (dpeaa)DE-He213 Aleksov, A. aut Li, X. aut Okuzumi, F. aut Wolter, S.D. aut Collazo, R. aut Prater, J.T. aut Sitar, Z. aut Enthalten in Applied physics Berlin : Springer, 1973 85(2006), 3 vom: 20. Sept., Seite 331-335 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:85 year:2006 number:3 day:20 month:09 pages:331-335 https://dx.doi.org/10.1007/s00339-006-3697-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 85 2006 3 20 09 331-335
allfieldsSound	10.1007/s00339-006-3697-7 doi (DE-627)SPR004091663 (SPR)s00339-006-3697-7-e DE-627 ger DE-627 rakwb eng Govindaraju, N. verfasserin aut Comparative study of textured diamond films by thermal conductivity measurements 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2006 Abstract Superior thermal conductivity, high resistance, high breakdown voltage and wide band gap make diamond an attractive material for a variety of applications in electronics. One of its most appealing applications is as a buried dielectric in silicon-on-diamond (SOD) technology. This paper presents thermal conductivity measurements conducted on a series of diamond films (grown by the microwave plasma chemical vapor deposition technique) as a function of the sample morphology and thickness, for eventual incorporation in the SOD structures. Results show that there is a significant difference in the measured thermal conductivity between samples with fiber texture and samples with sheet texture. Also, measurements performed on a 160-μm-thick diamond sample before and after reactive ion etching of approximately 10 μm of the nucleation layer show no significant change in the measured value of the thermal conductivity. Thermal Conductivity (dpeaa)DE-He213 Diamond Film (dpeaa)DE-He213 Lateral Thermal Conductivity (dpeaa)DE-He213 Thermal Conductivity Measurement (dpeaa)DE-He213 Nucleation Layer (dpeaa)DE-He213 Aleksov, A. aut Li, X. aut Okuzumi, F. aut Wolter, S.D. aut Collazo, R. aut Prater, J.T. aut Sitar, Z. aut Enthalten in Applied physics Berlin : Springer, 1973 85(2006), 3 vom: 20. Sept., Seite 331-335 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:85 year:2006 number:3 day:20 month:09 pages:331-335 https://dx.doi.org/10.1007/s00339-006-3697-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 85 2006 3 20 09 331-335
language	English
source	Enthalten in Applied physics 85(2006), 3 vom: 20. Sept., Seite 331-335 volume:85 year:2006 number:3 day:20 month:09 pages:331-335
sourceStr	Enthalten in Applied physics 85(2006), 3 vom: 20. Sept., Seite 331-335 volume:85 year:2006 number:3 day:20 month:09 pages:331-335
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Thermal Conductivity Diamond Film Lateral Thermal Conductivity Thermal Conductivity Measurement Nucleation Layer
isfreeaccess_bool	false
container_title	Applied physics
authorswithroles_txt_mv	Govindaraju, N. @@aut@@ Aleksov, A. @@aut@@ Li, X. @@aut@@ Okuzumi, F. @@aut@@ Wolter, S.D. @@aut@@ Collazo, R. @@aut@@ Prater, J.T. @@aut@@ Sitar, Z. @@aut@@
publishDateDaySort_date	2006-09-20T00:00:00Z
hierarchy_top_id	235503231
id	SPR004091663
language_de	englisch
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author	Govindaraju, N.
spellingShingle	Govindaraju, N. misc Thermal Conductivity misc Diamond Film misc Lateral Thermal Conductivity misc Thermal Conductivity Measurement misc Nucleation Layer Comparative study of textured diamond films by thermal conductivity measurements
authorStr	Govindaraju, N.
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topic_title	Comparative study of textured diamond films by thermal conductivity measurements Thermal Conductivity (dpeaa)DE-He213 Diamond Film (dpeaa)DE-He213 Lateral Thermal Conductivity (dpeaa)DE-He213 Thermal Conductivity Measurement (dpeaa)DE-He213 Nucleation Layer (dpeaa)DE-He213
topic	misc Thermal Conductivity misc Diamond Film misc Lateral Thermal Conductivity misc Thermal Conductivity Measurement misc Nucleation Layer
topic_unstemmed	misc Thermal Conductivity misc Diamond Film misc Lateral Thermal Conductivity misc Thermal Conductivity Measurement misc Nucleation Layer
topic_browse	misc Thermal Conductivity misc Diamond Film misc Lateral Thermal Conductivity misc Thermal Conductivity Measurement misc Nucleation Layer
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title	Comparative study of textured diamond films by thermal conductivity measurements
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title_full	Comparative study of textured diamond films by thermal conductivity measurements
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author_browse	Govindaraju, N. Aleksov, A. Li, X. Okuzumi, F. Wolter, S.D. Collazo, R. Prater, J.T. Sitar, Z.
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author-letter	Govindaraju, N.
doi_str_mv	10.1007/s00339-006-3697-7
title_sort	comparative study of textured diamond films by thermal conductivity measurements
title_auth	Comparative study of textured diamond films by thermal conductivity measurements
abstract	Abstract Superior thermal conductivity, high resistance, high breakdown voltage and wide band gap make diamond an attractive material for a variety of applications in electronics. One of its most appealing applications is as a buried dielectric in silicon-on-diamond (SOD) technology. This paper presents thermal conductivity measurements conducted on a series of diamond films (grown by the microwave plasma chemical vapor deposition technique) as a function of the sample morphology and thickness, for eventual incorporation in the SOD structures. Results show that there is a significant difference in the measured thermal conductivity between samples with fiber texture and samples with sheet texture. Also, measurements performed on a 160-μm-thick diamond sample before and after reactive ion etching of approximately 10 μm of the nucleation layer show no significant change in the measured value of the thermal conductivity. © Springer-Verlag 2006
abstractGer	Abstract Superior thermal conductivity, high resistance, high breakdown voltage and wide band gap make diamond an attractive material for a variety of applications in electronics. One of its most appealing applications is as a buried dielectric in silicon-on-diamond (SOD) technology. This paper presents thermal conductivity measurements conducted on a series of diamond films (grown by the microwave plasma chemical vapor deposition technique) as a function of the sample morphology and thickness, for eventual incorporation in the SOD structures. Results show that there is a significant difference in the measured thermal conductivity between samples with fiber texture and samples with sheet texture. Also, measurements performed on a 160-μm-thick diamond sample before and after reactive ion etching of approximately 10 μm of the nucleation layer show no significant change in the measured value of the thermal conductivity. © Springer-Verlag 2006
abstract_unstemmed	Abstract Superior thermal conductivity, high resistance, high breakdown voltage and wide band gap make diamond an attractive material for a variety of applications in electronics. One of its most appealing applications is as a buried dielectric in silicon-on-diamond (SOD) technology. This paper presents thermal conductivity measurements conducted on a series of diamond films (grown by the microwave plasma chemical vapor deposition technique) as a function of the sample morphology and thickness, for eventual incorporation in the SOD structures. Results show that there is a significant difference in the measured thermal conductivity between samples with fiber texture and samples with sheet texture. Also, measurements performed on a 160-μm-thick diamond sample before and after reactive ion etching of approximately 10 μm of the nucleation layer show no significant change in the measured value of the thermal conductivity. © Springer-Verlag 2006
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container_issue	3
title_short	Comparative study of textured diamond films by thermal conductivity measurements
url	https://dx.doi.org/10.1007/s00339-006-3697-7
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author2	Aleksov, A. Li, X. Okuzumi, F. Wolter, S.D. Collazo, R. Prater, J.T. Sitar, Z.
author2Str	Aleksov, A. Li, X. Okuzumi, F. Wolter, S.D. Collazo, R. Prater, J.T. Sitar, Z.
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doi_str	10.1007/s00339-006-3697-7
up_date	2024-07-03T23:34:11.148Z
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Comparative study of textured diamond films by thermal conductivity measurements

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