Preparation and properties of $ GaFeO_{3} $ thin films grown at various oxygen pressures by pulsed laser deposition
Abstract $ GaFeO_{3} $ thin films were prepared on (111)-oriented $ SrTiO_{3} $:Nb substrates under various oxygen pressures from 0.1 to 10 Pa at 700 °C by using a pulsed laser deposition method. Effects of the oxygen pressures on the crystallinity, dielectric and ferroelectric properties of the thi...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Sun, Z.H. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2007 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer-Verlag 2007 |
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| Übergeordnetes Werk: |
Enthalten in: Applied physics - Berlin : Springer, 1973, 91(2007), 1 vom: 19. Dez., Seite 97-100 |
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| Übergeordnetes Werk: |
volume:91 ; year:2007 ; number:1 ; day:19 ; month:12 ; pages:97-100 |
| Links: |
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| DOI / URN: |
10.1007/s00339-007-4364-3 |
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SPR004098706 |
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| 100 | 1 | |a Sun, Z.H. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Preparation and properties of $ GaFeO_{3} $ thin films grown at various oxygen pressures by pulsed laser deposition |
| 264 | 1 | |c 2007 | |
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| 520 | |a Abstract $ GaFeO_{3} $ thin films were prepared on (111)-oriented $ SrTiO_{3} $:Nb substrates under various oxygen pressures from 0.1 to 10 Pa at 700 °C by using a pulsed laser deposition method. Effects of the oxygen pressures on the crystallinity, dielectric and ferroelectric properties of the thin films were investigated at room temperature. The results show that the $ GaFeO_{3} $ thin films exhibit ferroelectricity and the properties of the thin films are influenced markedly by the deposition oxygen pressures. | ||
| 650 | 4 | |a Root Mean Square |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Oxygen Pressure |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Pulse Laser Deposition |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Ferroelectric Property |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Large Lattice Mismatch |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Zhou, Y.L. |4 aut | |
| 700 | 1 | |a Dai, S.Y. |4 aut | |
| 700 | 1 | |a Cao, L.Z. |4 aut | |
| 700 | 1 | |a Chen, Z.H. |4 aut | |
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10.1007/s00339-007-4364-3 doi (DE-627)SPR004098706 (SPR)s00339-007-4364-3-e DE-627 ger DE-627 rakwb eng Sun, Z.H. verfasserin aut Preparation and properties of $ GaFeO_{3} $ thin films grown at various oxygen pressures by pulsed laser deposition 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2007 Abstract $ GaFeO_{3} $ thin films were prepared on (111)-oriented $ SrTiO_{3} $:Nb substrates under various oxygen pressures from 0.1 to 10 Pa at 700 °C by using a pulsed laser deposition method. Effects of the oxygen pressures on the crystallinity, dielectric and ferroelectric properties of the thin films were investigated at room temperature. The results show that the $ GaFeO_{3} $ thin films exhibit ferroelectricity and the properties of the thin films are influenced markedly by the deposition oxygen pressures. Root Mean Square (dpeaa)DE-He213 Oxygen Pressure (dpeaa)DE-He213 Pulse Laser Deposition (dpeaa)DE-He213 Ferroelectric Property (dpeaa)DE-He213 Large Lattice Mismatch (dpeaa)DE-He213 Zhou, Y.L. aut Dai, S.Y. aut Cao, L.Z. aut Chen, Z.H. aut Enthalten in Applied physics Berlin : Springer, 1973 91(2007), 1 vom: 19. Dez., Seite 97-100 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:91 year:2007 number:1 day:19 month:12 pages:97-100 https://dx.doi.org/10.1007/s00339-007-4364-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 91 2007 1 19 12 97-100 |
| spelling |
10.1007/s00339-007-4364-3 doi (DE-627)SPR004098706 (SPR)s00339-007-4364-3-e DE-627 ger DE-627 rakwb eng Sun, Z.H. verfasserin aut Preparation and properties of $ GaFeO_{3} $ thin films grown at various oxygen pressures by pulsed laser deposition 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2007 Abstract $ GaFeO_{3} $ thin films were prepared on (111)-oriented $ SrTiO_{3} $:Nb substrates under various oxygen pressures from 0.1 to 10 Pa at 700 °C by using a pulsed laser deposition method. Effects of the oxygen pressures on the crystallinity, dielectric and ferroelectric properties of the thin films were investigated at room temperature. The results show that the $ GaFeO_{3} $ thin films exhibit ferroelectricity and the properties of the thin films are influenced markedly by the deposition oxygen pressures. Root Mean Square (dpeaa)DE-He213 Oxygen Pressure (dpeaa)DE-He213 Pulse Laser Deposition (dpeaa)DE-He213 Ferroelectric Property (dpeaa)DE-He213 Large Lattice Mismatch (dpeaa)DE-He213 Zhou, Y.L. aut Dai, S.Y. aut Cao, L.Z. aut Chen, Z.H. aut Enthalten in Applied physics Berlin : Springer, 1973 91(2007), 1 vom: 19. Dez., Seite 97-100 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:91 year:2007 number:1 day:19 month:12 pages:97-100 https://dx.doi.org/10.1007/s00339-007-4364-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 91 2007 1 19 12 97-100 |
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10.1007/s00339-007-4364-3 doi (DE-627)SPR004098706 (SPR)s00339-007-4364-3-e DE-627 ger DE-627 rakwb eng Sun, Z.H. verfasserin aut Preparation and properties of $ GaFeO_{3} $ thin films grown at various oxygen pressures by pulsed laser deposition 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2007 Abstract $ GaFeO_{3} $ thin films were prepared on (111)-oriented $ SrTiO_{3} $:Nb substrates under various oxygen pressures from 0.1 to 10 Pa at 700 °C by using a pulsed laser deposition method. Effects of the oxygen pressures on the crystallinity, dielectric and ferroelectric properties of the thin films were investigated at room temperature. The results show that the $ GaFeO_{3} $ thin films exhibit ferroelectricity and the properties of the thin films are influenced markedly by the deposition oxygen pressures. Root Mean Square (dpeaa)DE-He213 Oxygen Pressure (dpeaa)DE-He213 Pulse Laser Deposition (dpeaa)DE-He213 Ferroelectric Property (dpeaa)DE-He213 Large Lattice Mismatch (dpeaa)DE-He213 Zhou, Y.L. aut Dai, S.Y. aut Cao, L.Z. aut Chen, Z.H. aut Enthalten in Applied physics Berlin : Springer, 1973 91(2007), 1 vom: 19. Dez., Seite 97-100 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:91 year:2007 number:1 day:19 month:12 pages:97-100 https://dx.doi.org/10.1007/s00339-007-4364-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 91 2007 1 19 12 97-100 |
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10.1007/s00339-007-4364-3 doi (DE-627)SPR004098706 (SPR)s00339-007-4364-3-e DE-627 ger DE-627 rakwb eng Sun, Z.H. verfasserin aut Preparation and properties of $ GaFeO_{3} $ thin films grown at various oxygen pressures by pulsed laser deposition 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2007 Abstract $ GaFeO_{3} $ thin films were prepared on (111)-oriented $ SrTiO_{3} $:Nb substrates under various oxygen pressures from 0.1 to 10 Pa at 700 °C by using a pulsed laser deposition method. Effects of the oxygen pressures on the crystallinity, dielectric and ferroelectric properties of the thin films were investigated at room temperature. The results show that the $ GaFeO_{3} $ thin films exhibit ferroelectricity and the properties of the thin films are influenced markedly by the deposition oxygen pressures. Root Mean Square (dpeaa)DE-He213 Oxygen Pressure (dpeaa)DE-He213 Pulse Laser Deposition (dpeaa)DE-He213 Ferroelectric Property (dpeaa)DE-He213 Large Lattice Mismatch (dpeaa)DE-He213 Zhou, Y.L. aut Dai, S.Y. aut Cao, L.Z. aut Chen, Z.H. aut Enthalten in Applied physics Berlin : Springer, 1973 91(2007), 1 vom: 19. Dez., Seite 97-100 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:91 year:2007 number:1 day:19 month:12 pages:97-100 https://dx.doi.org/10.1007/s00339-007-4364-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 91 2007 1 19 12 97-100 |
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10.1007/s00339-007-4364-3 doi (DE-627)SPR004098706 (SPR)s00339-007-4364-3-e DE-627 ger DE-627 rakwb eng Sun, Z.H. verfasserin aut Preparation and properties of $ GaFeO_{3} $ thin films grown at various oxygen pressures by pulsed laser deposition 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2007 Abstract $ GaFeO_{3} $ thin films were prepared on (111)-oriented $ SrTiO_{3} $:Nb substrates under various oxygen pressures from 0.1 to 10 Pa at 700 °C by using a pulsed laser deposition method. Effects of the oxygen pressures on the crystallinity, dielectric and ferroelectric properties of the thin films were investigated at room temperature. The results show that the $ GaFeO_{3} $ thin films exhibit ferroelectricity and the properties of the thin films are influenced markedly by the deposition oxygen pressures. Root Mean Square (dpeaa)DE-He213 Oxygen Pressure (dpeaa)DE-He213 Pulse Laser Deposition (dpeaa)DE-He213 Ferroelectric Property (dpeaa)DE-He213 Large Lattice Mismatch (dpeaa)DE-He213 Zhou, Y.L. aut Dai, S.Y. aut Cao, L.Z. aut Chen, Z.H. aut Enthalten in Applied physics Berlin : Springer, 1973 91(2007), 1 vom: 19. Dez., Seite 97-100 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:91 year:2007 number:1 day:19 month:12 pages:97-100 https://dx.doi.org/10.1007/s00339-007-4364-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 91 2007 1 19 12 97-100 |
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Enthalten in Applied physics 91(2007), 1 vom: 19. Dez., Seite 97-100 volume:91 year:2007 number:1 day:19 month:12 pages:97-100 |
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Enthalten in Applied physics 91(2007), 1 vom: 19. Dez., Seite 97-100 volume:91 year:2007 number:1 day:19 month:12 pages:97-100 |
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Root Mean Square Oxygen Pressure Pulse Laser Deposition Ferroelectric Property Large Lattice Mismatch |
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Sun, Z.H. @@aut@@ Zhou, Y.L. @@aut@@ Dai, S.Y. @@aut@@ Cao, L.Z. @@aut@@ Chen, Z.H. @@aut@@ |
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Sun, Z.H. |
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Sun, Z.H. misc Root Mean Square misc Oxygen Pressure misc Pulse Laser Deposition misc Ferroelectric Property misc Large Lattice Mismatch Preparation and properties of $ GaFeO_{3} $ thin films grown at various oxygen pressures by pulsed laser deposition |
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Preparation and properties of $ GaFeO_{3} $ thin films grown at various oxygen pressures by pulsed laser deposition Root Mean Square (dpeaa)DE-He213 Oxygen Pressure (dpeaa)DE-He213 Pulse Laser Deposition (dpeaa)DE-He213 Ferroelectric Property (dpeaa)DE-He213 Large Lattice Mismatch (dpeaa)DE-He213 |
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misc Root Mean Square misc Oxygen Pressure misc Pulse Laser Deposition misc Ferroelectric Property misc Large Lattice Mismatch |
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Preparation and properties of $ GaFeO_{3} $ thin films grown at various oxygen pressures by pulsed laser deposition |
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Preparation and properties of $ GaFeO_{3} $ thin films grown at various oxygen pressures by pulsed laser deposition |
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Sun, Z.H. |
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Sun, Z.H. |
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preparation and properties of $ gafeo_{3} $ thin films grown at various oxygen pressures by pulsed laser deposition |
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Preparation and properties of $ GaFeO_{3} $ thin films grown at various oxygen pressures by pulsed laser deposition |
| abstract |
Abstract $ GaFeO_{3} $ thin films were prepared on (111)-oriented $ SrTiO_{3} $:Nb substrates under various oxygen pressures from 0.1 to 10 Pa at 700 °C by using a pulsed laser deposition method. Effects of the oxygen pressures on the crystallinity, dielectric and ferroelectric properties of the thin films were investigated at room temperature. The results show that the $ GaFeO_{3} $ thin films exhibit ferroelectricity and the properties of the thin films are influenced markedly by the deposition oxygen pressures. © Springer-Verlag 2007 |
| abstractGer |
Abstract $ GaFeO_{3} $ thin films were prepared on (111)-oriented $ SrTiO_{3} $:Nb substrates under various oxygen pressures from 0.1 to 10 Pa at 700 °C by using a pulsed laser deposition method. Effects of the oxygen pressures on the crystallinity, dielectric and ferroelectric properties of the thin films were investigated at room temperature. The results show that the $ GaFeO_{3} $ thin films exhibit ferroelectricity and the properties of the thin films are influenced markedly by the deposition oxygen pressures. © Springer-Verlag 2007 |
| abstract_unstemmed |
Abstract $ GaFeO_{3} $ thin films were prepared on (111)-oriented $ SrTiO_{3} $:Nb substrates under various oxygen pressures from 0.1 to 10 Pa at 700 °C by using a pulsed laser deposition method. Effects of the oxygen pressures on the crystallinity, dielectric and ferroelectric properties of the thin films were investigated at room temperature. The results show that the $ GaFeO_{3} $ thin films exhibit ferroelectricity and the properties of the thin films are influenced markedly by the deposition oxygen pressures. © Springer-Verlag 2007 |
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Preparation and properties of $ GaFeO_{3} $ thin films grown at various oxygen pressures by pulsed laser deposition |
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https://dx.doi.org/10.1007/s00339-007-4364-3 |
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Zhou, Y.L. Dai, S.Y. Cao, L.Z. Chen, Z.H. |
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Zhou, Y.L. Dai, S.Y. Cao, L.Z. Chen, Z.H. |
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2024-07-03T23:36:21.407Z |
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| score |
7.3992643 |