Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals
Abstract We report the metalorganic vapour phase epitaxy (MOVPE) of CdTe layers on detector-grade travelling heater method (THM)-grown (111)B-CdTe substrates, a technological step towards the fabrication of homoepitaxial p–i–n diodes as nuclear radiation detectors. CdTe layers were grown at 330 °C u...
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| Autor*in: |
Traversa, M. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2008 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer-Verlag 2008 |
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| Übergeordnetes Werk: |
Enthalten in: Applied physics - Berlin : Springer, 1973, 91(2008), 1 vom: 25. Jan., Seite 23-28 |
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| Übergeordnetes Werk: |
volume:91 ; year:2008 ; number:1 ; day:25 ; month:01 ; pages:23-28 |
| Links: |
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| DOI / URN: |
10.1007/s00339-007-4382-1 |
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| Katalog-ID: |
SPR004098803 |
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| 100 | 1 | |a Traversa, M. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals |
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| 520 | |a Abstract We report the metalorganic vapour phase epitaxy (MOVPE) of CdTe layers on detector-grade travelling heater method (THM)-grown (111)B-CdTe substrates, a technological step towards the fabrication of homoepitaxial p–i–n diodes as nuclear radiation detectors. CdTe layers were grown at 330 °C using dimethylcadmium ($ Me_{2} $Cd) and di-isopropyltelluride. A quantitative analysis of the substrate X-ray surface reflectivity after a sequence of treatment steps, i.e. (i) $ Br_{2} $–methanol etching, (ii) in situ $ H_{2} $ heat cleaning at 350 °C, and (iii) $ H_{2} $ heat cleaning and annealing in $ H_{2} $+$ Me_{2} $Cd atmosphere, demonstrated that the rms roughness of the (111)B surface steadily decreases after each treatment, the smoothest surface being obtained after annealing in $ H_{2} $+$ Me_{2} $Cd. The growth of (111)-oriented homoepitaxial layers depends critically on a combination of in situ substrate treatment and precursor stoichiometry during the MOVPE process. CdTe layers grown under a 1:1 molar flow ratio between Te and Cd precursors on $ H_{2} $ heat cleaned substrates show a polycrystalline structure and a rough surface morphology, an effect ascribed to poor material nucleation on the Te-rich (111)B surface, as left upon $ Br_{2} $–methanol etching of the THM-grown crystal. Further annealing of the substrates in $ H_{2} $+$ Me_{2} $Cd shifts the Te:Cd stoichiometry of the crystal surface closer to the ideal 1:1 bulk value. Layers grown on such Cd-annealed substrates show a more (111)-oriented crystalline texture and substantially improved surface morphologies, but also the occurrence of a tetragonal secondary phase. Fully epitaxial (111)-oriented layers were instead obtained on $ H_{2} $ heat cleaned substrates by growing under Cd-rich vapour conditions. | ||
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| 700 | 1 | |a Marzo, F. |4 aut | |
| 700 | 1 | |a Lovergine, N. |4 aut | |
| 700 | 1 | |a Mancini, A.M. |4 aut | |
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10.1007/s00339-007-4382-1 doi (DE-627)SPR004098803 (SPR)s00339-007-4382-1-e DE-627 ger DE-627 rakwb eng Traversa, M. verfasserin aut Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2008 Abstract We report the metalorganic vapour phase epitaxy (MOVPE) of CdTe layers on detector-grade travelling heater method (THM)-grown (111)B-CdTe substrates, a technological step towards the fabrication of homoepitaxial p–i–n diodes as nuclear radiation detectors. CdTe layers were grown at 330 °C using dimethylcadmium ($ Me_{2} $Cd) and di-isopropyltelluride. A quantitative analysis of the substrate X-ray surface reflectivity after a sequence of treatment steps, i.e. (i) $ Br_{2} $–methanol etching, (ii) in situ $ H_{2} $ heat cleaning at 350 °C, and (iii) $ H_{2} $ heat cleaning and annealing in $ H_{2} $+$ Me_{2} $Cd atmosphere, demonstrated that the rms roughness of the (111)B surface steadily decreases after each treatment, the smoothest surface being obtained after annealing in $ H_{2} $+$ Me_{2} $Cd. The growth of (111)-oriented homoepitaxial layers depends critically on a combination of in situ substrate treatment and precursor stoichiometry during the MOVPE process. CdTe layers grown under a 1:1 molar flow ratio between Te and Cd precursors on $ H_{2} $ heat cleaned substrates show a polycrystalline structure and a rough surface morphology, an effect ascribed to poor material nucleation on the Te-rich (111)B surface, as left upon $ Br_{2} $–methanol etching of the THM-grown crystal. Further annealing of the substrates in $ H_{2} $+$ Me_{2} $Cd shifts the Te:Cd stoichiometry of the crystal surface closer to the ideal 1:1 bulk value. Layers grown on such Cd-annealed substrates show a more (111)-oriented crystalline texture and substantially improved surface morphologies, but also the occurrence of a tetragonal secondary phase. Fully epitaxial (111)-oriented layers were instead obtained on $ H_{2} $ heat cleaned substrates by growing under Cd-rich vapour conditions. ZnTe (dpeaa)DE-He213 CdTe Layer (dpeaa)DE-He213 CdTe Crystal (dpeaa)DE-He213 CdTe Substrate (dpeaa)DE-He213 Rough Surface Morphology (dpeaa)DE-He213 Tapfer, L. aut Paiano, P. aut Prete, P. aut Marzo, F. aut Lovergine, N. aut Mancini, A.M. aut Enthalten in Applied physics Berlin : Springer, 1973 91(2008), 1 vom: 25. Jan., Seite 23-28 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:91 year:2008 number:1 day:25 month:01 pages:23-28 https://dx.doi.org/10.1007/s00339-007-4382-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 91 2008 1 25 01 23-28 |
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10.1007/s00339-007-4382-1 doi (DE-627)SPR004098803 (SPR)s00339-007-4382-1-e DE-627 ger DE-627 rakwb eng Traversa, M. verfasserin aut Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2008 Abstract We report the metalorganic vapour phase epitaxy (MOVPE) of CdTe layers on detector-grade travelling heater method (THM)-grown (111)B-CdTe substrates, a technological step towards the fabrication of homoepitaxial p–i–n diodes as nuclear radiation detectors. CdTe layers were grown at 330 °C using dimethylcadmium ($ Me_{2} $Cd) and di-isopropyltelluride. A quantitative analysis of the substrate X-ray surface reflectivity after a sequence of treatment steps, i.e. (i) $ Br_{2} $–methanol etching, (ii) in situ $ H_{2} $ heat cleaning at 350 °C, and (iii) $ H_{2} $ heat cleaning and annealing in $ H_{2} $+$ Me_{2} $Cd atmosphere, demonstrated that the rms roughness of the (111)B surface steadily decreases after each treatment, the smoothest surface being obtained after annealing in $ H_{2} $+$ Me_{2} $Cd. The growth of (111)-oriented homoepitaxial layers depends critically on a combination of in situ substrate treatment and precursor stoichiometry during the MOVPE process. CdTe layers grown under a 1:1 molar flow ratio between Te and Cd precursors on $ H_{2} $ heat cleaned substrates show a polycrystalline structure and a rough surface morphology, an effect ascribed to poor material nucleation on the Te-rich (111)B surface, as left upon $ Br_{2} $–methanol etching of the THM-grown crystal. Further annealing of the substrates in $ H_{2} $+$ Me_{2} $Cd shifts the Te:Cd stoichiometry of the crystal surface closer to the ideal 1:1 bulk value. Layers grown on such Cd-annealed substrates show a more (111)-oriented crystalline texture and substantially improved surface morphologies, but also the occurrence of a tetragonal secondary phase. Fully epitaxial (111)-oriented layers were instead obtained on $ H_{2} $ heat cleaned substrates by growing under Cd-rich vapour conditions. ZnTe (dpeaa)DE-He213 CdTe Layer (dpeaa)DE-He213 CdTe Crystal (dpeaa)DE-He213 CdTe Substrate (dpeaa)DE-He213 Rough Surface Morphology (dpeaa)DE-He213 Tapfer, L. aut Paiano, P. aut Prete, P. aut Marzo, F. aut Lovergine, N. aut Mancini, A.M. aut Enthalten in Applied physics Berlin : Springer, 1973 91(2008), 1 vom: 25. Jan., Seite 23-28 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:91 year:2008 number:1 day:25 month:01 pages:23-28 https://dx.doi.org/10.1007/s00339-007-4382-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 91 2008 1 25 01 23-28 |
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10.1007/s00339-007-4382-1 doi (DE-627)SPR004098803 (SPR)s00339-007-4382-1-e DE-627 ger DE-627 rakwb eng Traversa, M. verfasserin aut Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2008 Abstract We report the metalorganic vapour phase epitaxy (MOVPE) of CdTe layers on detector-grade travelling heater method (THM)-grown (111)B-CdTe substrates, a technological step towards the fabrication of homoepitaxial p–i–n diodes as nuclear radiation detectors. CdTe layers were grown at 330 °C using dimethylcadmium ($ Me_{2} $Cd) and di-isopropyltelluride. A quantitative analysis of the substrate X-ray surface reflectivity after a sequence of treatment steps, i.e. (i) $ Br_{2} $–methanol etching, (ii) in situ $ H_{2} $ heat cleaning at 350 °C, and (iii) $ H_{2} $ heat cleaning and annealing in $ H_{2} $+$ Me_{2} $Cd atmosphere, demonstrated that the rms roughness of the (111)B surface steadily decreases after each treatment, the smoothest surface being obtained after annealing in $ H_{2} $+$ Me_{2} $Cd. The growth of (111)-oriented homoepitaxial layers depends critically on a combination of in situ substrate treatment and precursor stoichiometry during the MOVPE process. CdTe layers grown under a 1:1 molar flow ratio between Te and Cd precursors on $ H_{2} $ heat cleaned substrates show a polycrystalline structure and a rough surface morphology, an effect ascribed to poor material nucleation on the Te-rich (111)B surface, as left upon $ Br_{2} $–methanol etching of the THM-grown crystal. Further annealing of the substrates in $ H_{2} $+$ Me_{2} $Cd shifts the Te:Cd stoichiometry of the crystal surface closer to the ideal 1:1 bulk value. Layers grown on such Cd-annealed substrates show a more (111)-oriented crystalline texture and substantially improved surface morphologies, but also the occurrence of a tetragonal secondary phase. Fully epitaxial (111)-oriented layers were instead obtained on $ H_{2} $ heat cleaned substrates by growing under Cd-rich vapour conditions. ZnTe (dpeaa)DE-He213 CdTe Layer (dpeaa)DE-He213 CdTe Crystal (dpeaa)DE-He213 CdTe Substrate (dpeaa)DE-He213 Rough Surface Morphology (dpeaa)DE-He213 Tapfer, L. aut Paiano, P. aut Prete, P. aut Marzo, F. aut Lovergine, N. aut Mancini, A.M. aut Enthalten in Applied physics Berlin : Springer, 1973 91(2008), 1 vom: 25. Jan., Seite 23-28 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:91 year:2008 number:1 day:25 month:01 pages:23-28 https://dx.doi.org/10.1007/s00339-007-4382-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 91 2008 1 25 01 23-28 |
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10.1007/s00339-007-4382-1 doi (DE-627)SPR004098803 (SPR)s00339-007-4382-1-e DE-627 ger DE-627 rakwb eng Traversa, M. verfasserin aut Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2008 Abstract We report the metalorganic vapour phase epitaxy (MOVPE) of CdTe layers on detector-grade travelling heater method (THM)-grown (111)B-CdTe substrates, a technological step towards the fabrication of homoepitaxial p–i–n diodes as nuclear radiation detectors. CdTe layers were grown at 330 °C using dimethylcadmium ($ Me_{2} $Cd) and di-isopropyltelluride. A quantitative analysis of the substrate X-ray surface reflectivity after a sequence of treatment steps, i.e. (i) $ Br_{2} $–methanol etching, (ii) in situ $ H_{2} $ heat cleaning at 350 °C, and (iii) $ H_{2} $ heat cleaning and annealing in $ H_{2} $+$ Me_{2} $Cd atmosphere, demonstrated that the rms roughness of the (111)B surface steadily decreases after each treatment, the smoothest surface being obtained after annealing in $ H_{2} $+$ Me_{2} $Cd. The growth of (111)-oriented homoepitaxial layers depends critically on a combination of in situ substrate treatment and precursor stoichiometry during the MOVPE process. CdTe layers grown under a 1:1 molar flow ratio between Te and Cd precursors on $ H_{2} $ heat cleaned substrates show a polycrystalline structure and a rough surface morphology, an effect ascribed to poor material nucleation on the Te-rich (111)B surface, as left upon $ Br_{2} $–methanol etching of the THM-grown crystal. Further annealing of the substrates in $ H_{2} $+$ Me_{2} $Cd shifts the Te:Cd stoichiometry of the crystal surface closer to the ideal 1:1 bulk value. Layers grown on such Cd-annealed substrates show a more (111)-oriented crystalline texture and substantially improved surface morphologies, but also the occurrence of a tetragonal secondary phase. Fully epitaxial (111)-oriented layers were instead obtained on $ H_{2} $ heat cleaned substrates by growing under Cd-rich vapour conditions. ZnTe (dpeaa)DE-He213 CdTe Layer (dpeaa)DE-He213 CdTe Crystal (dpeaa)DE-He213 CdTe Substrate (dpeaa)DE-He213 Rough Surface Morphology (dpeaa)DE-He213 Tapfer, L. aut Paiano, P. aut Prete, P. aut Marzo, F. aut Lovergine, N. aut Mancini, A.M. aut Enthalten in Applied physics Berlin : Springer, 1973 91(2008), 1 vom: 25. Jan., Seite 23-28 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:91 year:2008 number:1 day:25 month:01 pages:23-28 https://dx.doi.org/10.1007/s00339-007-4382-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 91 2008 1 25 01 23-28 |
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10.1007/s00339-007-4382-1 doi (DE-627)SPR004098803 (SPR)s00339-007-4382-1-e DE-627 ger DE-627 rakwb eng Traversa, M. verfasserin aut Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2008 Abstract We report the metalorganic vapour phase epitaxy (MOVPE) of CdTe layers on detector-grade travelling heater method (THM)-grown (111)B-CdTe substrates, a technological step towards the fabrication of homoepitaxial p–i–n diodes as nuclear radiation detectors. CdTe layers were grown at 330 °C using dimethylcadmium ($ Me_{2} $Cd) and di-isopropyltelluride. A quantitative analysis of the substrate X-ray surface reflectivity after a sequence of treatment steps, i.e. (i) $ Br_{2} $–methanol etching, (ii) in situ $ H_{2} $ heat cleaning at 350 °C, and (iii) $ H_{2} $ heat cleaning and annealing in $ H_{2} $+$ Me_{2} $Cd atmosphere, demonstrated that the rms roughness of the (111)B surface steadily decreases after each treatment, the smoothest surface being obtained after annealing in $ H_{2} $+$ Me_{2} $Cd. The growth of (111)-oriented homoepitaxial layers depends critically on a combination of in situ substrate treatment and precursor stoichiometry during the MOVPE process. CdTe layers grown under a 1:1 molar flow ratio between Te and Cd precursors on $ H_{2} $ heat cleaned substrates show a polycrystalline structure and a rough surface morphology, an effect ascribed to poor material nucleation on the Te-rich (111)B surface, as left upon $ Br_{2} $–methanol etching of the THM-grown crystal. Further annealing of the substrates in $ H_{2} $+$ Me_{2} $Cd shifts the Te:Cd stoichiometry of the crystal surface closer to the ideal 1:1 bulk value. Layers grown on such Cd-annealed substrates show a more (111)-oriented crystalline texture and substantially improved surface morphologies, but also the occurrence of a tetragonal secondary phase. Fully epitaxial (111)-oriented layers were instead obtained on $ H_{2} $ heat cleaned substrates by growing under Cd-rich vapour conditions. ZnTe (dpeaa)DE-He213 CdTe Layer (dpeaa)DE-He213 CdTe Crystal (dpeaa)DE-He213 CdTe Substrate (dpeaa)DE-He213 Rough Surface Morphology (dpeaa)DE-He213 Tapfer, L. aut Paiano, P. aut Prete, P. aut Marzo, F. aut Lovergine, N. aut Mancini, A.M. aut Enthalten in Applied physics Berlin : Springer, 1973 91(2008), 1 vom: 25. Jan., Seite 23-28 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:91 year:2008 number:1 day:25 month:01 pages:23-28 https://dx.doi.org/10.1007/s00339-007-4382-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 91 2008 1 25 01 23-28 |
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Enthalten in Applied physics 91(2008), 1 vom: 25. Jan., Seite 23-28 volume:91 year:2008 number:1 day:25 month:01 pages:23-28 |
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Enthalten in Applied physics 91(2008), 1 vom: 25. Jan., Seite 23-28 volume:91 year:2008 number:1 day:25 month:01 pages:23-28 |
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ZnTe CdTe Layer CdTe Crystal CdTe Substrate Rough Surface Morphology |
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Traversa, M. @@aut@@ Tapfer, L. @@aut@@ Paiano, P. @@aut@@ Prete, P. @@aut@@ Marzo, F. @@aut@@ Lovergine, N. @@aut@@ Mancini, A.M. @@aut@@ |
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CdTe layers were grown at 330 °C using dimethylcadmium ($ Me_{2} $Cd) and di-isopropyltelluride. A quantitative analysis of the substrate X-ray surface reflectivity after a sequence of treatment steps, i.e. (i) $ Br_{2} $–methanol etching, (ii) in situ $ H_{2} $ heat cleaning at 350 °C, and (iii) $ H_{2} $ heat cleaning and annealing in $ H_{2} $+$ Me_{2} $Cd atmosphere, demonstrated that the rms roughness of the (111)B surface steadily decreases after each treatment, the smoothest surface being obtained after annealing in $ H_{2} $+$ Me_{2} $Cd. The growth of (111)-oriented homoepitaxial layers depends critically on a combination of in situ substrate treatment and precursor stoichiometry during the MOVPE process. CdTe layers grown under a 1:1 molar flow ratio between Te and Cd precursors on $ H_{2} $ heat cleaned substrates show a polycrystalline structure and a rough surface morphology, an effect ascribed to poor material nucleation on the Te-rich (111)B surface, as left upon $ Br_{2} $–methanol etching of the THM-grown crystal. Further annealing of the substrates in $ H_{2} $+$ Me_{2} $Cd shifts the Te:Cd stoichiometry of the crystal surface closer to the ideal 1:1 bulk value. Layers grown on such Cd-annealed substrates show a more (111)-oriented crystalline texture and substantially improved surface morphologies, but also the occurrence of a tetragonal secondary phase. 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Traversa, M. |
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Traversa, M. misc ZnTe misc CdTe Layer misc CdTe Crystal misc CdTe Substrate misc Rough Surface Morphology Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals |
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Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals ZnTe (dpeaa)DE-He213 CdTe Layer (dpeaa)DE-He213 CdTe Crystal (dpeaa)DE-He213 CdTe Substrate (dpeaa)DE-He213 Rough Surface Morphology (dpeaa)DE-He213 |
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10.1007/s00339-007-4382-1 |
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substrate treatment and precursor stoichiometry effects on the homoepitaxy of cdte grown by movpe on detector-grade (111)b-cdte crystals |
| title_auth |
Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals |
| abstract |
Abstract We report the metalorganic vapour phase epitaxy (MOVPE) of CdTe layers on detector-grade travelling heater method (THM)-grown (111)B-CdTe substrates, a technological step towards the fabrication of homoepitaxial p–i–n diodes as nuclear radiation detectors. CdTe layers were grown at 330 °C using dimethylcadmium ($ Me_{2} $Cd) and di-isopropyltelluride. A quantitative analysis of the substrate X-ray surface reflectivity after a sequence of treatment steps, i.e. (i) $ Br_{2} $–methanol etching, (ii) in situ $ H_{2} $ heat cleaning at 350 °C, and (iii) $ H_{2} $ heat cleaning and annealing in $ H_{2} $+$ Me_{2} $Cd atmosphere, demonstrated that the rms roughness of the (111)B surface steadily decreases after each treatment, the smoothest surface being obtained after annealing in $ H_{2} $+$ Me_{2} $Cd. The growth of (111)-oriented homoepitaxial layers depends critically on a combination of in situ substrate treatment and precursor stoichiometry during the MOVPE process. CdTe layers grown under a 1:1 molar flow ratio between Te and Cd precursors on $ H_{2} $ heat cleaned substrates show a polycrystalline structure and a rough surface morphology, an effect ascribed to poor material nucleation on the Te-rich (111)B surface, as left upon $ Br_{2} $–methanol etching of the THM-grown crystal. Further annealing of the substrates in $ H_{2} $+$ Me_{2} $Cd shifts the Te:Cd stoichiometry of the crystal surface closer to the ideal 1:1 bulk value. Layers grown on such Cd-annealed substrates show a more (111)-oriented crystalline texture and substantially improved surface morphologies, but also the occurrence of a tetragonal secondary phase. Fully epitaxial (111)-oriented layers were instead obtained on $ H_{2} $ heat cleaned substrates by growing under Cd-rich vapour conditions. © Springer-Verlag 2008 |
| abstractGer |
Abstract We report the metalorganic vapour phase epitaxy (MOVPE) of CdTe layers on detector-grade travelling heater method (THM)-grown (111)B-CdTe substrates, a technological step towards the fabrication of homoepitaxial p–i–n diodes as nuclear radiation detectors. CdTe layers were grown at 330 °C using dimethylcadmium ($ Me_{2} $Cd) and di-isopropyltelluride. A quantitative analysis of the substrate X-ray surface reflectivity after a sequence of treatment steps, i.e. (i) $ Br_{2} $–methanol etching, (ii) in situ $ H_{2} $ heat cleaning at 350 °C, and (iii) $ H_{2} $ heat cleaning and annealing in $ H_{2} $+$ Me_{2} $Cd atmosphere, demonstrated that the rms roughness of the (111)B surface steadily decreases after each treatment, the smoothest surface being obtained after annealing in $ H_{2} $+$ Me_{2} $Cd. The growth of (111)-oriented homoepitaxial layers depends critically on a combination of in situ substrate treatment and precursor stoichiometry during the MOVPE process. CdTe layers grown under a 1:1 molar flow ratio between Te and Cd precursors on $ H_{2} $ heat cleaned substrates show a polycrystalline structure and a rough surface morphology, an effect ascribed to poor material nucleation on the Te-rich (111)B surface, as left upon $ Br_{2} $–methanol etching of the THM-grown crystal. Further annealing of the substrates in $ H_{2} $+$ Me_{2} $Cd shifts the Te:Cd stoichiometry of the crystal surface closer to the ideal 1:1 bulk value. Layers grown on such Cd-annealed substrates show a more (111)-oriented crystalline texture and substantially improved surface morphologies, but also the occurrence of a tetragonal secondary phase. Fully epitaxial (111)-oriented layers were instead obtained on $ H_{2} $ heat cleaned substrates by growing under Cd-rich vapour conditions. © Springer-Verlag 2008 |
| abstract_unstemmed |
Abstract We report the metalorganic vapour phase epitaxy (MOVPE) of CdTe layers on detector-grade travelling heater method (THM)-grown (111)B-CdTe substrates, a technological step towards the fabrication of homoepitaxial p–i–n diodes as nuclear radiation detectors. CdTe layers were grown at 330 °C using dimethylcadmium ($ Me_{2} $Cd) and di-isopropyltelluride. A quantitative analysis of the substrate X-ray surface reflectivity after a sequence of treatment steps, i.e. (i) $ Br_{2} $–methanol etching, (ii) in situ $ H_{2} $ heat cleaning at 350 °C, and (iii) $ H_{2} $ heat cleaning and annealing in $ H_{2} $+$ Me_{2} $Cd atmosphere, demonstrated that the rms roughness of the (111)B surface steadily decreases after each treatment, the smoothest surface being obtained after annealing in $ H_{2} $+$ Me_{2} $Cd. The growth of (111)-oriented homoepitaxial layers depends critically on a combination of in situ substrate treatment and precursor stoichiometry during the MOVPE process. CdTe layers grown under a 1:1 molar flow ratio between Te and Cd precursors on $ H_{2} $ heat cleaned substrates show a polycrystalline structure and a rough surface morphology, an effect ascribed to poor material nucleation on the Te-rich (111)B surface, as left upon $ Br_{2} $–methanol etching of the THM-grown crystal. Further annealing of the substrates in $ H_{2} $+$ Me_{2} $Cd shifts the Te:Cd stoichiometry of the crystal surface closer to the ideal 1:1 bulk value. Layers grown on such Cd-annealed substrates show a more (111)-oriented crystalline texture and substantially improved surface morphologies, but also the occurrence of a tetragonal secondary phase. Fully epitaxial (111)-oriented layers were instead obtained on $ H_{2} $ heat cleaned substrates by growing under Cd-rich vapour conditions. © Springer-Verlag 2008 |
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Substrate treatment and precursor stoichiometry effects on the homoepitaxy of CdTe grown by MOVPE on detector-grade (111)B-CdTe crystals |
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https://dx.doi.org/10.1007/s00339-007-4382-1 |
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Tapfer, L. Paiano, P. Prete, P. Marzo, F. Lovergine, N. Mancini, A.M. |
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| score |
7.4006386 |