Optical and electrical characterization of well-aligned ZnO rods electrodeposited on stainless steel foil

Abstract Aligned ZnO nanorods grown on polycrystalline substrates have promising optoelectronic applications. Novel samples with such structures were electrodeposited on stainless steel foil from a $ ZnCl_{2} $ route. Well-aligned and free-standing hexagonal nanorods with 100-nm diameter and closely...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Rakhshani, A.E. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2008

Schlagwörter:	Barrier Height Ideality Factor Schottky Diode Defect Level Schottky Contact

Anmerkung:	© Springer-Verlag 2008

Übergeordnetes Werk:	Enthalten in: Applied physics - Berlin : Springer, 1973, 92(2008), 2 vom: 17. Mai, Seite 303-308
Übergeordnetes Werk:	volume:92 ; year:2008 ; number:2 ; day:17 ; month:05 ; pages:303-308

Links:	Volltext

DOI / URN:	10.1007/s00339-008-4526-y

Katalog-ID:	SPR004100336

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520			\|a Abstract Aligned ZnO nanorods grown on polycrystalline substrates have promising optoelectronic applications. Novel samples with such structures were electrodeposited on stainless steel foil from a $ ZnCl_{2} $ route. Well-aligned and free-standing hexagonal nanorods with 100-nm diameter and closely packed microrods with a diameter above 1 μm could be grown normal to the substrate. The optical transition energies (absorption and emission) of samples were determined by transmittance and photoluminescence spectroscopy. We report, for the first time, the fabrication of high-quality Ag Schottky diodes formed on the oxygen-treated (002) facets of electrodeposited microrods. Diodes with a large barrier height (1.2 eV), low saturation current density (1.3 pA/$ cm^{2} $) and high rectification factor (5×$ 10^{6} $ at ± 3 V) were achieved. The concentration and mobility of free electrons in oxygen-treated microrods were measured as 1.4×$ 10^{14} $ $ cm^{-3} $ and 1.2 $ cm^{2} $ $ V^{-1} $ $ s^{-1} $, respectively.
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912			\|a GBV_ILN_293
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912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
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912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
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912			\|a GBV_ILN_2025
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publishDate	2008
allfields	10.1007/s00339-008-4526-y doi (DE-627)SPR004100336 (SPR)s00339-008-4526-y-e DE-627 ger DE-627 rakwb eng Rakhshani, A.E. verfasserin aut Optical and electrical characterization of well-aligned ZnO rods electrodeposited on stainless steel foil 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2008 Abstract Aligned ZnO nanorods grown on polycrystalline substrates have promising optoelectronic applications. Novel samples with such structures were electrodeposited on stainless steel foil from a $ ZnCl_{2} $ route. Well-aligned and free-standing hexagonal nanorods with 100-nm diameter and closely packed microrods with a diameter above 1 μm could be grown normal to the substrate. The optical transition energies (absorption and emission) of samples were determined by transmittance and photoluminescence spectroscopy. We report, for the first time, the fabrication of high-quality Ag Schottky diodes formed on the oxygen-treated (002) facets of electrodeposited microrods. Diodes with a large barrier height (1.2 eV), low saturation current density (1.3 pA/$ cm^{2} $) and high rectification factor (5×$ 10^{6} $ at ± 3 V) were achieved. The concentration and mobility of free electrons in oxygen-treated microrods were measured as 1.4×$ 10^{14} $ $ cm^{-3} $ and 1.2 $ cm^{2} $ $ V^{-1} $ $ s^{-1} $, respectively. Barrier Height (dpeaa)DE-He213 Ideality Factor (dpeaa)DE-He213 Schottky Diode (dpeaa)DE-He213 Defect Level (dpeaa)DE-He213 Schottky Contact (dpeaa)DE-He213 Enthalten in Applied physics Berlin : Springer, 1973 92(2008), 2 vom: 17. Mai, Seite 303-308 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:92 year:2008 number:2 day:17 month:05 pages:303-308 https://dx.doi.org/10.1007/s00339-008-4526-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 92 2008 2 17 05 303-308
spelling	10.1007/s00339-008-4526-y doi (DE-627)SPR004100336 (SPR)s00339-008-4526-y-e DE-627 ger DE-627 rakwb eng Rakhshani, A.E. verfasserin aut Optical and electrical characterization of well-aligned ZnO rods electrodeposited on stainless steel foil 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2008 Abstract Aligned ZnO nanorods grown on polycrystalline substrates have promising optoelectronic applications. Novel samples with such structures were electrodeposited on stainless steel foil from a $ ZnCl_{2} $ route. Well-aligned and free-standing hexagonal nanorods with 100-nm diameter and closely packed microrods with a diameter above 1 μm could be grown normal to the substrate. The optical transition energies (absorption and emission) of samples were determined by transmittance and photoluminescence spectroscopy. We report, for the first time, the fabrication of high-quality Ag Schottky diodes formed on the oxygen-treated (002) facets of electrodeposited microrods. Diodes with a large barrier height (1.2 eV), low saturation current density (1.3 pA/$ cm^{2} $) and high rectification factor (5×$ 10^{6} $ at ± 3 V) were achieved. The concentration and mobility of free electrons in oxygen-treated microrods were measured as 1.4×$ 10^{14} $ $ cm^{-3} $ and 1.2 $ cm^{2} $ $ V^{-1} $ $ s^{-1} $, respectively. Barrier Height (dpeaa)DE-He213 Ideality Factor (dpeaa)DE-He213 Schottky Diode (dpeaa)DE-He213 Defect Level (dpeaa)DE-He213 Schottky Contact (dpeaa)DE-He213 Enthalten in Applied physics Berlin : Springer, 1973 92(2008), 2 vom: 17. Mai, Seite 303-308 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:92 year:2008 number:2 day:17 month:05 pages:303-308 https://dx.doi.org/10.1007/s00339-008-4526-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 92 2008 2 17 05 303-308
allfields_unstemmed	10.1007/s00339-008-4526-y doi (DE-627)SPR004100336 (SPR)s00339-008-4526-y-e DE-627 ger DE-627 rakwb eng Rakhshani, A.E. verfasserin aut Optical and electrical characterization of well-aligned ZnO rods electrodeposited on stainless steel foil 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2008 Abstract Aligned ZnO nanorods grown on polycrystalline substrates have promising optoelectronic applications. Novel samples with such structures were electrodeposited on stainless steel foil from a $ ZnCl_{2} $ route. Well-aligned and free-standing hexagonal nanorods with 100-nm diameter and closely packed microrods with a diameter above 1 μm could be grown normal to the substrate. The optical transition energies (absorption and emission) of samples were determined by transmittance and photoluminescence spectroscopy. We report, for the first time, the fabrication of high-quality Ag Schottky diodes formed on the oxygen-treated (002) facets of electrodeposited microrods. Diodes with a large barrier height (1.2 eV), low saturation current density (1.3 pA/$ cm^{2} $) and high rectification factor (5×$ 10^{6} $ at ± 3 V) were achieved. The concentration and mobility of free electrons in oxygen-treated microrods were measured as 1.4×$ 10^{14} $ $ cm^{-3} $ and 1.2 $ cm^{2} $ $ V^{-1} $ $ s^{-1} $, respectively. Barrier Height (dpeaa)DE-He213 Ideality Factor (dpeaa)DE-He213 Schottky Diode (dpeaa)DE-He213 Defect Level (dpeaa)DE-He213 Schottky Contact (dpeaa)DE-He213 Enthalten in Applied physics Berlin : Springer, 1973 92(2008), 2 vom: 17. Mai, Seite 303-308 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:92 year:2008 number:2 day:17 month:05 pages:303-308 https://dx.doi.org/10.1007/s00339-008-4526-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 92 2008 2 17 05 303-308
allfieldsGer	10.1007/s00339-008-4526-y doi (DE-627)SPR004100336 (SPR)s00339-008-4526-y-e DE-627 ger DE-627 rakwb eng Rakhshani, A.E. verfasserin aut Optical and electrical characterization of well-aligned ZnO rods electrodeposited on stainless steel foil 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2008 Abstract Aligned ZnO nanorods grown on polycrystalline substrates have promising optoelectronic applications. Novel samples with such structures were electrodeposited on stainless steel foil from a $ ZnCl_{2} $ route. Well-aligned and free-standing hexagonal nanorods with 100-nm diameter and closely packed microrods with a diameter above 1 μm could be grown normal to the substrate. The optical transition energies (absorption and emission) of samples were determined by transmittance and photoluminescence spectroscopy. We report, for the first time, the fabrication of high-quality Ag Schottky diodes formed on the oxygen-treated (002) facets of electrodeposited microrods. Diodes with a large barrier height (1.2 eV), low saturation current density (1.3 pA/$ cm^{2} $) and high rectification factor (5×$ 10^{6} $ at ± 3 V) were achieved. The concentration and mobility of free electrons in oxygen-treated microrods were measured as 1.4×$ 10^{14} $ $ cm^{-3} $ and 1.2 $ cm^{2} $ $ V^{-1} $ $ s^{-1} $, respectively. Barrier Height (dpeaa)DE-He213 Ideality Factor (dpeaa)DE-He213 Schottky Diode (dpeaa)DE-He213 Defect Level (dpeaa)DE-He213 Schottky Contact (dpeaa)DE-He213 Enthalten in Applied physics Berlin : Springer, 1973 92(2008), 2 vom: 17. Mai, Seite 303-308 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:92 year:2008 number:2 day:17 month:05 pages:303-308 https://dx.doi.org/10.1007/s00339-008-4526-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 92 2008 2 17 05 303-308
allfieldsSound	10.1007/s00339-008-4526-y doi (DE-627)SPR004100336 (SPR)s00339-008-4526-y-e DE-627 ger DE-627 rakwb eng Rakhshani, A.E. verfasserin aut Optical and electrical characterization of well-aligned ZnO rods electrodeposited on stainless steel foil 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2008 Abstract Aligned ZnO nanorods grown on polycrystalline substrates have promising optoelectronic applications. Novel samples with such structures were electrodeposited on stainless steel foil from a $ ZnCl_{2} $ route. Well-aligned and free-standing hexagonal nanorods with 100-nm diameter and closely packed microrods with a diameter above 1 μm could be grown normal to the substrate. The optical transition energies (absorption and emission) of samples were determined by transmittance and photoluminescence spectroscopy. We report, for the first time, the fabrication of high-quality Ag Schottky diodes formed on the oxygen-treated (002) facets of electrodeposited microrods. Diodes with a large barrier height (1.2 eV), low saturation current density (1.3 pA/$ cm^{2} $) and high rectification factor (5×$ 10^{6} $ at ± 3 V) were achieved. The concentration and mobility of free electrons in oxygen-treated microrods were measured as 1.4×$ 10^{14} $ $ cm^{-3} $ and 1.2 $ cm^{2} $ $ V^{-1} $ $ s^{-1} $, respectively. Barrier Height (dpeaa)DE-He213 Ideality Factor (dpeaa)DE-He213 Schottky Diode (dpeaa)DE-He213 Defect Level (dpeaa)DE-He213 Schottky Contact (dpeaa)DE-He213 Enthalten in Applied physics Berlin : Springer, 1973 92(2008), 2 vom: 17. Mai, Seite 303-308 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:92 year:2008 number:2 day:17 month:05 pages:303-308 https://dx.doi.org/10.1007/s00339-008-4526-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 92 2008 2 17 05 303-308
language	English
source	Enthalten in Applied physics 92(2008), 2 vom: 17. Mai, Seite 303-308 volume:92 year:2008 number:2 day:17 month:05 pages:303-308
sourceStr	Enthalten in Applied physics 92(2008), 2 vom: 17. Mai, Seite 303-308 volume:92 year:2008 number:2 day:17 month:05 pages:303-308
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Barrier Height Ideality Factor Schottky Diode Defect Level Schottky Contact
isfreeaccess_bool	false
container_title	Applied physics
authorswithroles_txt_mv	Rakhshani, A.E. @@aut@@
publishDateDaySort_date	2008-05-17T00:00:00Z
hierarchy_top_id	235503231
id	SPR004100336
language_de	englisch
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Novel samples with such structures were electrodeposited on stainless steel foil from a $ ZnCl_{2} $ route. Well-aligned and free-standing hexagonal nanorods with 100-nm diameter and closely packed microrods with a diameter above 1 μm could be grown normal to the substrate. The optical transition energies (absorption and emission) of samples were determined by transmittance and photoluminescence spectroscopy. We report, for the first time, the fabrication of high-quality Ag Schottky diodes formed on the oxygen-treated (002) facets of electrodeposited microrods. Diodes with a large barrier height (1.2 eV), low saturation current density (1.3 pA/$ cm^{2} $) and high rectification factor (5×$ 10^{6} $ at ± 3 V) were achieved. 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author	Rakhshani, A.E.
spellingShingle	Rakhshani, A.E. misc Barrier Height misc Ideality Factor misc Schottky Diode misc Defect Level misc Schottky Contact Optical and electrical characterization of well-aligned ZnO rods electrodeposited on stainless steel foil
authorStr	Rakhshani, A.E.
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topic_title	Optical and electrical characterization of well-aligned ZnO rods electrodeposited on stainless steel foil Barrier Height (dpeaa)DE-He213 Ideality Factor (dpeaa)DE-He213 Schottky Diode (dpeaa)DE-He213 Defect Level (dpeaa)DE-He213 Schottky Contact (dpeaa)DE-He213
topic	misc Barrier Height misc Ideality Factor misc Schottky Diode misc Defect Level misc Schottky Contact
topic_unstemmed	misc Barrier Height misc Ideality Factor misc Schottky Diode misc Defect Level misc Schottky Contact
topic_browse	misc Barrier Height misc Ideality Factor misc Schottky Diode misc Defect Level misc Schottky Contact
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
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title	Optical and electrical characterization of well-aligned ZnO rods electrodeposited on stainless steel foil
ctrlnum	(DE-627)SPR004100336 (SPR)s00339-008-4526-y-e
title_full	Optical and electrical characterization of well-aligned ZnO rods electrodeposited on stainless steel foil
author_sort	Rakhshani, A.E.
journal	Applied physics
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author_browse	Rakhshani, A.E.
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author-letter	Rakhshani, A.E.
doi_str_mv	10.1007/s00339-008-4526-y
title_sort	optical and electrical characterization of well-aligned zno rods electrodeposited on stainless steel foil
title_auth	Optical and electrical characterization of well-aligned ZnO rods electrodeposited on stainless steel foil
abstract	Abstract Aligned ZnO nanorods grown on polycrystalline substrates have promising optoelectronic applications. Novel samples with such structures were electrodeposited on stainless steel foil from a $ ZnCl_{2} $ route. Well-aligned and free-standing hexagonal nanorods with 100-nm diameter and closely packed microrods with a diameter above 1 μm could be grown normal to the substrate. The optical transition energies (absorption and emission) of samples were determined by transmittance and photoluminescence spectroscopy. We report, for the first time, the fabrication of high-quality Ag Schottky diodes formed on the oxygen-treated (002) facets of electrodeposited microrods. Diodes with a large barrier height (1.2 eV), low saturation current density (1.3 pA/$ cm^{2} $) and high rectification factor (5×$ 10^{6} $ at ± 3 V) were achieved. The concentration and mobility of free electrons in oxygen-treated microrods were measured as 1.4×$ 10^{14} $ $ cm^{-3} $ and 1.2 $ cm^{2} $ $ V^{-1} $ $ s^{-1} $, respectively. © Springer-Verlag 2008
abstractGer	Abstract Aligned ZnO nanorods grown on polycrystalline substrates have promising optoelectronic applications. Novel samples with such structures were electrodeposited on stainless steel foil from a $ ZnCl_{2} $ route. Well-aligned and free-standing hexagonal nanorods with 100-nm diameter and closely packed microrods with a diameter above 1 μm could be grown normal to the substrate. The optical transition energies (absorption and emission) of samples were determined by transmittance and photoluminescence spectroscopy. We report, for the first time, the fabrication of high-quality Ag Schottky diodes formed on the oxygen-treated (002) facets of electrodeposited microrods. Diodes with a large barrier height (1.2 eV), low saturation current density (1.3 pA/$ cm^{2} $) and high rectification factor (5×$ 10^{6} $ at ± 3 V) were achieved. The concentration and mobility of free electrons in oxygen-treated microrods were measured as 1.4×$ 10^{14} $ $ cm^{-3} $ and 1.2 $ cm^{2} $ $ V^{-1} $ $ s^{-1} $, respectively. © Springer-Verlag 2008
abstract_unstemmed	Abstract Aligned ZnO nanorods grown on polycrystalline substrates have promising optoelectronic applications. Novel samples with such structures were electrodeposited on stainless steel foil from a $ ZnCl_{2} $ route. Well-aligned and free-standing hexagonal nanorods with 100-nm diameter and closely packed microrods with a diameter above 1 μm could be grown normal to the substrate. The optical transition energies (absorption and emission) of samples were determined by transmittance and photoluminescence spectroscopy. We report, for the first time, the fabrication of high-quality Ag Schottky diodes formed on the oxygen-treated (002) facets of electrodeposited microrods. Diodes with a large barrier height (1.2 eV), low saturation current density (1.3 pA/$ cm^{2} $) and high rectification factor (5×$ 10^{6} $ at ± 3 V) were achieved. The concentration and mobility of free electrons in oxygen-treated microrods were measured as 1.4×$ 10^{14} $ $ cm^{-3} $ and 1.2 $ cm^{2} $ $ V^{-1} $ $ s^{-1} $, respectively. © Springer-Verlag 2008
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container_issue	2
title_short	Optical and electrical characterization of well-aligned ZnO rods electrodeposited on stainless steel foil
url	https://dx.doi.org/10.1007/s00339-008-4526-y
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doi_str	10.1007/s00339-008-4526-y
up_date	2024-07-03T23:36:51.035Z
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Optical and electrical characterization of well-aligned ZnO rods electrodeposited on stainless steel foil

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