Band offsets of epitaxial $ LaAlO_{3} $/$ TiO_{2} $ interface determined by X-ray photoelectron spectroscopy
Abstract Room-temperature ferromagnetism in doped anatase $ TiO_{2} $ has previously been observed, ferromagnetic semiconductor heterostructures based on anatase $ TiO_{2} $ can thus provide a new opportunity to study spin-dependent transport phenomena at room temperature. An accurate determination...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Yang, J. Y. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2011 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer-Verlag 2011 |
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| Übergeordnetes Werk: |
Enthalten in: Applied physics - Berlin : Springer, 1973, 105(2011), 4 vom: 16. Sept., Seite 1017-1020 |
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| Übergeordnetes Werk: |
volume:105 ; year:2011 ; number:4 ; day:16 ; month:09 ; pages:1017-1020 |
| Links: |
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| DOI / URN: |
10.1007/s00339-011-6535-5 |
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SPR004123093 |
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| 245 | 1 | 0 | |a Band offsets of epitaxial $ LaAlO_{3} $/$ TiO_{2} $ interface determined by X-ray photoelectron spectroscopy |
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| 520 | |a Abstract Room-temperature ferromagnetism in doped anatase $ TiO_{2} $ has previously been observed, ferromagnetic semiconductor heterostructures based on anatase $ TiO_{2} $ can thus provide a new opportunity to study spin-dependent transport phenomena at room temperature. An accurate determination of barrier heights or band offsets at the $ TiO_{2} $-based heterojunctions is of great importance for the spintronics application with semiconductors. X-ray photoelectron spectroscopy with high-energy resolution was used to determine the band offsets of epitaxial $ LaAlO_{3} $/$ TiO_{2} $ heterojunction on $ SrTiO_{3} $(001) substrate fabricated by pulsed laser deposition. Results showed an upward band bending of 0.48(0.03) eV when the film thickness of the overlayer $ LaAlO_{3} $ above 4 unit cells. The valence band offset obtained is about 0.35(0.16) eV. Assuming bulk band gaps for the $ LaAlO_{3} $ and $ TiO_{2} $ epitaxial films, the associated conduction band offset is about 2.95(0.16) eV. These results show that $ LaAlO_{3} $ can be an ideal tunneling barrier for $ TiO_{2} $-based heterojunctions. | ||
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| 700 | 1 | |a Dou, R. F. |4 aut | |
| 700 | 1 | |a Xiong, C. M. |4 aut | |
| 700 | 1 | |a Nie, J. C. |4 aut | |
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10.1007/s00339-011-6535-5 doi (DE-627)SPR004123093 (SPR)s00339-011-6535-5-e DE-627 ger DE-627 rakwb eng Yang, J. Y. verfasserin aut Band offsets of epitaxial $ LaAlO_{3} $/$ TiO_{2} $ interface determined by X-ray photoelectron spectroscopy 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2011 Abstract Room-temperature ferromagnetism in doped anatase $ TiO_{2} $ has previously been observed, ferromagnetic semiconductor heterostructures based on anatase $ TiO_{2} $ can thus provide a new opportunity to study spin-dependent transport phenomena at room temperature. An accurate determination of barrier heights or band offsets at the $ TiO_{2} $-based heterojunctions is of great importance for the spintronics application with semiconductors. X-ray photoelectron spectroscopy with high-energy resolution was used to determine the band offsets of epitaxial $ LaAlO_{3} $/$ TiO_{2} $ heterojunction on $ SrTiO_{3} $(001) substrate fabricated by pulsed laser deposition. Results showed an upward band bending of 0.48(0.03) eV when the film thickness of the overlayer $ LaAlO_{3} $ above 4 unit cells. The valence band offset obtained is about 0.35(0.16) eV. Assuming bulk band gaps for the $ LaAlO_{3} $ and $ TiO_{2} $ epitaxial films, the associated conduction band offset is about 2.95(0.16) eV. These results show that $ LaAlO_{3} $ can be an ideal tunneling barrier for $ TiO_{2} $-based heterojunctions. Band Offset (dpeaa)DE-He213 Valence Band Offset (dpeaa)DE-He213 Conduction Band Offset (dpeaa)DE-He213 Upward Band (dpeaa)DE-He213 Thick LaAlO (dpeaa)DE-He213 Sun, Y. aut Lv, P. aut He, L. aut Dou, R. F. aut Xiong, C. M. aut Nie, J. C. aut Enthalten in Applied physics Berlin : Springer, 1973 105(2011), 4 vom: 16. Sept., Seite 1017-1020 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:105 year:2011 number:4 day:16 month:09 pages:1017-1020 https://dx.doi.org/10.1007/s00339-011-6535-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 105 2011 4 16 09 1017-1020 |
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10.1007/s00339-011-6535-5 doi (DE-627)SPR004123093 (SPR)s00339-011-6535-5-e DE-627 ger DE-627 rakwb eng Yang, J. Y. verfasserin aut Band offsets of epitaxial $ LaAlO_{3} $/$ TiO_{2} $ interface determined by X-ray photoelectron spectroscopy 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2011 Abstract Room-temperature ferromagnetism in doped anatase $ TiO_{2} $ has previously been observed, ferromagnetic semiconductor heterostructures based on anatase $ TiO_{2} $ can thus provide a new opportunity to study spin-dependent transport phenomena at room temperature. An accurate determination of barrier heights or band offsets at the $ TiO_{2} $-based heterojunctions is of great importance for the spintronics application with semiconductors. X-ray photoelectron spectroscopy with high-energy resolution was used to determine the band offsets of epitaxial $ LaAlO_{3} $/$ TiO_{2} $ heterojunction on $ SrTiO_{3} $(001) substrate fabricated by pulsed laser deposition. Results showed an upward band bending of 0.48(0.03) eV when the film thickness of the overlayer $ LaAlO_{3} $ above 4 unit cells. The valence band offset obtained is about 0.35(0.16) eV. Assuming bulk band gaps for the $ LaAlO_{3} $ and $ TiO_{2} $ epitaxial films, the associated conduction band offset is about 2.95(0.16) eV. These results show that $ LaAlO_{3} $ can be an ideal tunneling barrier for $ TiO_{2} $-based heterojunctions. Band Offset (dpeaa)DE-He213 Valence Band Offset (dpeaa)DE-He213 Conduction Band Offset (dpeaa)DE-He213 Upward Band (dpeaa)DE-He213 Thick LaAlO (dpeaa)DE-He213 Sun, Y. aut Lv, P. aut He, L. aut Dou, R. F. aut Xiong, C. M. aut Nie, J. C. aut Enthalten in Applied physics Berlin : Springer, 1973 105(2011), 4 vom: 16. Sept., Seite 1017-1020 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:105 year:2011 number:4 day:16 month:09 pages:1017-1020 https://dx.doi.org/10.1007/s00339-011-6535-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 105 2011 4 16 09 1017-1020 |
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10.1007/s00339-011-6535-5 doi (DE-627)SPR004123093 (SPR)s00339-011-6535-5-e DE-627 ger DE-627 rakwb eng Yang, J. Y. verfasserin aut Band offsets of epitaxial $ LaAlO_{3} $/$ TiO_{2} $ interface determined by X-ray photoelectron spectroscopy 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2011 Abstract Room-temperature ferromagnetism in doped anatase $ TiO_{2} $ has previously been observed, ferromagnetic semiconductor heterostructures based on anatase $ TiO_{2} $ can thus provide a new opportunity to study spin-dependent transport phenomena at room temperature. An accurate determination of barrier heights or band offsets at the $ TiO_{2} $-based heterojunctions is of great importance for the spintronics application with semiconductors. X-ray photoelectron spectroscopy with high-energy resolution was used to determine the band offsets of epitaxial $ LaAlO_{3} $/$ TiO_{2} $ heterojunction on $ SrTiO_{3} $(001) substrate fabricated by pulsed laser deposition. Results showed an upward band bending of 0.48(0.03) eV when the film thickness of the overlayer $ LaAlO_{3} $ above 4 unit cells. The valence band offset obtained is about 0.35(0.16) eV. Assuming bulk band gaps for the $ LaAlO_{3} $ and $ TiO_{2} $ epitaxial films, the associated conduction band offset is about 2.95(0.16) eV. These results show that $ LaAlO_{3} $ can be an ideal tunneling barrier for $ TiO_{2} $-based heterojunctions. Band Offset (dpeaa)DE-He213 Valence Band Offset (dpeaa)DE-He213 Conduction Band Offset (dpeaa)DE-He213 Upward Band (dpeaa)DE-He213 Thick LaAlO (dpeaa)DE-He213 Sun, Y. aut Lv, P. aut He, L. aut Dou, R. F. aut Xiong, C. M. aut Nie, J. C. aut Enthalten in Applied physics Berlin : Springer, 1973 105(2011), 4 vom: 16. Sept., Seite 1017-1020 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:105 year:2011 number:4 day:16 month:09 pages:1017-1020 https://dx.doi.org/10.1007/s00339-011-6535-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 105 2011 4 16 09 1017-1020 |
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10.1007/s00339-011-6535-5 doi (DE-627)SPR004123093 (SPR)s00339-011-6535-5-e DE-627 ger DE-627 rakwb eng Yang, J. Y. verfasserin aut Band offsets of epitaxial $ LaAlO_{3} $/$ TiO_{2} $ interface determined by X-ray photoelectron spectroscopy 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2011 Abstract Room-temperature ferromagnetism in doped anatase $ TiO_{2} $ has previously been observed, ferromagnetic semiconductor heterostructures based on anatase $ TiO_{2} $ can thus provide a new opportunity to study spin-dependent transport phenomena at room temperature. An accurate determination of barrier heights or band offsets at the $ TiO_{2} $-based heterojunctions is of great importance for the spintronics application with semiconductors. X-ray photoelectron spectroscopy with high-energy resolution was used to determine the band offsets of epitaxial $ LaAlO_{3} $/$ TiO_{2} $ heterojunction on $ SrTiO_{3} $(001) substrate fabricated by pulsed laser deposition. Results showed an upward band bending of 0.48(0.03) eV when the film thickness of the overlayer $ LaAlO_{3} $ above 4 unit cells. The valence band offset obtained is about 0.35(0.16) eV. Assuming bulk band gaps for the $ LaAlO_{3} $ and $ TiO_{2} $ epitaxial films, the associated conduction band offset is about 2.95(0.16) eV. These results show that $ LaAlO_{3} $ can be an ideal tunneling barrier for $ TiO_{2} $-based heterojunctions. Band Offset (dpeaa)DE-He213 Valence Band Offset (dpeaa)DE-He213 Conduction Band Offset (dpeaa)DE-He213 Upward Band (dpeaa)DE-He213 Thick LaAlO (dpeaa)DE-He213 Sun, Y. aut Lv, P. aut He, L. aut Dou, R. F. aut Xiong, C. M. aut Nie, J. C. aut Enthalten in Applied physics Berlin : Springer, 1973 105(2011), 4 vom: 16. Sept., Seite 1017-1020 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:105 year:2011 number:4 day:16 month:09 pages:1017-1020 https://dx.doi.org/10.1007/s00339-011-6535-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 105 2011 4 16 09 1017-1020 |
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10.1007/s00339-011-6535-5 doi (DE-627)SPR004123093 (SPR)s00339-011-6535-5-e DE-627 ger DE-627 rakwb eng Yang, J. Y. verfasserin aut Band offsets of epitaxial $ LaAlO_{3} $/$ TiO_{2} $ interface determined by X-ray photoelectron spectroscopy 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2011 Abstract Room-temperature ferromagnetism in doped anatase $ TiO_{2} $ has previously been observed, ferromagnetic semiconductor heterostructures based on anatase $ TiO_{2} $ can thus provide a new opportunity to study spin-dependent transport phenomena at room temperature. An accurate determination of barrier heights or band offsets at the $ TiO_{2} $-based heterojunctions is of great importance for the spintronics application with semiconductors. X-ray photoelectron spectroscopy with high-energy resolution was used to determine the band offsets of epitaxial $ LaAlO_{3} $/$ TiO_{2} $ heterojunction on $ SrTiO_{3} $(001) substrate fabricated by pulsed laser deposition. Results showed an upward band bending of 0.48(0.03) eV when the film thickness of the overlayer $ LaAlO_{3} $ above 4 unit cells. The valence band offset obtained is about 0.35(0.16) eV. Assuming bulk band gaps for the $ LaAlO_{3} $ and $ TiO_{2} $ epitaxial films, the associated conduction band offset is about 2.95(0.16) eV. These results show that $ LaAlO_{3} $ can be an ideal tunneling barrier for $ TiO_{2} $-based heterojunctions. Band Offset (dpeaa)DE-He213 Valence Band Offset (dpeaa)DE-He213 Conduction Band Offset (dpeaa)DE-He213 Upward Band (dpeaa)DE-He213 Thick LaAlO (dpeaa)DE-He213 Sun, Y. aut Lv, P. aut He, L. aut Dou, R. F. aut Xiong, C. M. aut Nie, J. C. aut Enthalten in Applied physics Berlin : Springer, 1973 105(2011), 4 vom: 16. Sept., Seite 1017-1020 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:105 year:2011 number:4 day:16 month:09 pages:1017-1020 https://dx.doi.org/10.1007/s00339-011-6535-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 105 2011 4 16 09 1017-1020 |
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Enthalten in Applied physics 105(2011), 4 vom: 16. Sept., Seite 1017-1020 volume:105 year:2011 number:4 day:16 month:09 pages:1017-1020 |
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Yang, J. Y. @@aut@@ Sun, Y. @@aut@@ Lv, P. @@aut@@ He, L. @@aut@@ Dou, R. F. @@aut@@ Xiong, C. M. @@aut@@ Nie, J. C. @@aut@@ |
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Y.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Band offsets of epitaxial $ LaAlO_{3} $/$ TiO_{2} $ interface determined by X-ray photoelectron spectroscopy</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2011</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer-Verlag 2011</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Room-temperature ferromagnetism in doped anatase $ TiO_{2} $ has previously been observed, ferromagnetic semiconductor heterostructures based on anatase $ TiO_{2} $ can thus provide a new opportunity to study spin-dependent transport phenomena at room temperature. An accurate determination of barrier heights or band offsets at the $ TiO_{2} $-based heterojunctions is of great importance for the spintronics application with semiconductors. X-ray photoelectron spectroscopy with high-energy resolution was used to determine the band offsets of epitaxial $ LaAlO_{3} $/$ TiO_{2} $ heterojunction on $ SrTiO_{3} $(001) substrate fabricated by pulsed laser deposition. Results showed an upward band bending of 0.48(0.03) eV when the film thickness of the overlayer $ LaAlO_{3} $ above 4 unit cells. The valence band offset obtained is about 0.35(0.16) eV. Assuming bulk band gaps for the $ LaAlO_{3} $ and $ TiO_{2} $ epitaxial films, the associated conduction band offset is about 2.95(0.16) eV. 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Yang, J. Y. |
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Yang, J. Y. misc Band Offset misc Valence Band Offset misc Conduction Band Offset misc Upward Band misc Thick LaAlO Band offsets of epitaxial $ LaAlO_{3} $/$ TiO_{2} $ interface determined by X-ray photoelectron spectroscopy |
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Band offsets of epitaxial $ LaAlO_{3} $/$ TiO_{2} $ interface determined by X-ray photoelectron spectroscopy Band Offset (dpeaa)DE-He213 Valence Band Offset (dpeaa)DE-He213 Conduction Band Offset (dpeaa)DE-He213 Upward Band (dpeaa)DE-He213 Thick LaAlO (dpeaa)DE-He213 |
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misc Band Offset misc Valence Band Offset misc Conduction Band Offset misc Upward Band misc Thick LaAlO |
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Band offsets of epitaxial $ LaAlO_{3} $/$ TiO_{2} $ interface determined by X-ray photoelectron spectroscopy |
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Band offsets of epitaxial $ LaAlO_{3} $/$ TiO_{2} $ interface determined by X-ray photoelectron spectroscopy |
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Yang, J. Y. |
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Applied physics |
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Yang, J. Y. Sun, Y. Lv, P. He, L. Dou, R. F. Xiong, C. M. Nie, J. C. |
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Elektronische Aufsätze |
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Yang, J. Y. |
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10.1007/s00339-011-6535-5 |
| title_sort |
band offsets of epitaxial $ laalo_{3} $/$ tio_{2} $ interface determined by x-ray photoelectron spectroscopy |
| title_auth |
Band offsets of epitaxial $ LaAlO_{3} $/$ TiO_{2} $ interface determined by X-ray photoelectron spectroscopy |
| abstract |
Abstract Room-temperature ferromagnetism in doped anatase $ TiO_{2} $ has previously been observed, ferromagnetic semiconductor heterostructures based on anatase $ TiO_{2} $ can thus provide a new opportunity to study spin-dependent transport phenomena at room temperature. An accurate determination of barrier heights or band offsets at the $ TiO_{2} $-based heterojunctions is of great importance for the spintronics application with semiconductors. X-ray photoelectron spectroscopy with high-energy resolution was used to determine the band offsets of epitaxial $ LaAlO_{3} $/$ TiO_{2} $ heterojunction on $ SrTiO_{3} $(001) substrate fabricated by pulsed laser deposition. Results showed an upward band bending of 0.48(0.03) eV when the film thickness of the overlayer $ LaAlO_{3} $ above 4 unit cells. The valence band offset obtained is about 0.35(0.16) eV. Assuming bulk band gaps for the $ LaAlO_{3} $ and $ TiO_{2} $ epitaxial films, the associated conduction band offset is about 2.95(0.16) eV. These results show that $ LaAlO_{3} $ can be an ideal tunneling barrier for $ TiO_{2} $-based heterojunctions. © Springer-Verlag 2011 |
| abstractGer |
Abstract Room-temperature ferromagnetism in doped anatase $ TiO_{2} $ has previously been observed, ferromagnetic semiconductor heterostructures based on anatase $ TiO_{2} $ can thus provide a new opportunity to study spin-dependent transport phenomena at room temperature. An accurate determination of barrier heights or band offsets at the $ TiO_{2} $-based heterojunctions is of great importance for the spintronics application with semiconductors. X-ray photoelectron spectroscopy with high-energy resolution was used to determine the band offsets of epitaxial $ LaAlO_{3} $/$ TiO_{2} $ heterojunction on $ SrTiO_{3} $(001) substrate fabricated by pulsed laser deposition. Results showed an upward band bending of 0.48(0.03) eV when the film thickness of the overlayer $ LaAlO_{3} $ above 4 unit cells. The valence band offset obtained is about 0.35(0.16) eV. Assuming bulk band gaps for the $ LaAlO_{3} $ and $ TiO_{2} $ epitaxial films, the associated conduction band offset is about 2.95(0.16) eV. These results show that $ LaAlO_{3} $ can be an ideal tunneling barrier for $ TiO_{2} $-based heterojunctions. © Springer-Verlag 2011 |
| abstract_unstemmed |
Abstract Room-temperature ferromagnetism in doped anatase $ TiO_{2} $ has previously been observed, ferromagnetic semiconductor heterostructures based on anatase $ TiO_{2} $ can thus provide a new opportunity to study spin-dependent transport phenomena at room temperature. An accurate determination of barrier heights or band offsets at the $ TiO_{2} $-based heterojunctions is of great importance for the spintronics application with semiconductors. X-ray photoelectron spectroscopy with high-energy resolution was used to determine the band offsets of epitaxial $ LaAlO_{3} $/$ TiO_{2} $ heterojunction on $ SrTiO_{3} $(001) substrate fabricated by pulsed laser deposition. Results showed an upward band bending of 0.48(0.03) eV when the film thickness of the overlayer $ LaAlO_{3} $ above 4 unit cells. The valence band offset obtained is about 0.35(0.16) eV. Assuming bulk band gaps for the $ LaAlO_{3} $ and $ TiO_{2} $ epitaxial films, the associated conduction band offset is about 2.95(0.16) eV. These results show that $ LaAlO_{3} $ can be an ideal tunneling barrier for $ TiO_{2} $-based heterojunctions. © Springer-Verlag 2011 |
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Band offsets of epitaxial $ LaAlO_{3} $/$ TiO_{2} $ interface determined by X-ray photoelectron spectroscopy |
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https://dx.doi.org/10.1007/s00339-011-6535-5 |
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Sun, Y. Lv, P. He, L. Dou, R. F. Xiong, C. M. Nie, J. C. |
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Sun, Y. Lv, P. He, L. Dou, R. F. Xiong, C. M. Nie, J. C. |
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| score |
7.401641 |