Structure and dielectric behavior of $ TlSbS_{2} $

Abstract A comparison of structure and dielectric properties of $ TlSbS_{2} $ thin films, deposited in different thicknesses (400–4100 Å) by thermal evaporation of $ TlSbS_{2} $ crystals that were grown by the Stockbarger–Bridgman technique and the bulk material properties of $ TlSbS_{2} $ are prese...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Parto, M. [verfasserIn] Deger, D. Ulutas, K. Yakut, Ş.

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2012

Schlagwörter:	Dielectric Constant Dielectric Loss Dielectric Loss Factor Quantum Mechanical Tunneling Temperature Dependent Behavior

Anmerkung:	© Springer-Verlag Berlin Heidelberg 2012

Übergeordnetes Werk:	Enthalten in: Applied physics - Berlin : Springer, 1973, 112(2012), 4 vom: 23. Nov., Seite 911-918
Übergeordnetes Werk:	volume:112 ; year:2012 ; number:4 ; day:23 ; month:11 ; pages:911-918

Links:	Volltext

DOI / URN:	10.1007/s00339-012-7446-9

Katalog-ID:	SPR00413429X

Internformat


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520			\|a Abstract A comparison of structure and dielectric properties of $ TlSbS_{2} $ thin films, deposited in different thicknesses (400–4100 Å) by thermal evaporation of $ TlSbS_{2} $ crystals that were grown by the Stockbarger–Bridgman technique and the bulk material properties of $ TlSbS_{2} $ are presented. Dielectric constant ε1 and dielectric loss ε2 have been calculated by measuring capacitance and dielectric loss factor in the frequency range 20 Hz–10 KHz and in the temperature range 273–433 K. It is observed that at 1 kHz frequency and 293 K temperature the dielectric constant of $ TlSbS_{2} $ thin films is ε1=1.8–6 and the dielectric loss of $ TlSbS_{2} $ thin films is ε2=0.5–3 depending on film thickness. In the given intervals, both of dielectric constant and dielectric loss decrease with frequency, but increase with temperature. The maximum barrier height Wm is calculated from the dielectric measurements. The values of Wm for $ TlSbS_{2} $ films and bulk are obtained as 0.56 eV and 0.62 eV at room temperature, respectively. The obtained values agree with those proposed by the theory of hopping over the potential barrier. The temperature variation of ac conductivity can be reasonably interpreted in terms of the correlated barrier hopping model since it obeys the ωs law with a temperature dependent s (s<1) and going down as the temperature is increased. The temperature coefficient of capacitance (TCC) and permittivity (TCP) are evaluated for both thin films and bulk material of $ TlSbS_{2} $.
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650		4	\|a Quantum Mechanical Tunneling \|7 (dpeaa)DE-He213
650		4	\|a Temperature Dependent Behavior \|7 (dpeaa)DE-He213
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700	1		\|a Ulutas, K. \|4 aut
700	1		\|a Yakut, Ş. \|4 aut
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publishDate	2012
allfields	10.1007/s00339-012-7446-9 doi (DE-627)SPR00413429X (SPR)s00339-012-7446-9-e DE-627 ger DE-627 rakwb eng Parto, M. verfasserin aut Structure and dielectric behavior of $ TlSbS_{2} $ 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2012 Abstract A comparison of structure and dielectric properties of $ TlSbS_{2} $ thin films, deposited in different thicknesses (400–4100 Å) by thermal evaporation of $ TlSbS_{2} $ crystals that were grown by the Stockbarger–Bridgman technique and the bulk material properties of $ TlSbS_{2} $ are presented. Dielectric constant ε1 and dielectric loss ε2 have been calculated by measuring capacitance and dielectric loss factor in the frequency range 20 Hz–10 KHz and in the temperature range 273–433 K. It is observed that at 1 kHz frequency and 293 K temperature the dielectric constant of $ TlSbS_{2} $ thin films is ε1=1.8–6 and the dielectric loss of $ TlSbS_{2} $ thin films is ε2=0.5–3 depending on film thickness. In the given intervals, both of dielectric constant and dielectric loss decrease with frequency, but increase with temperature. The maximum barrier height Wm is calculated from the dielectric measurements. The values of Wm for $ TlSbS_{2} $ films and bulk are obtained as 0.56 eV and 0.62 eV at room temperature, respectively. The obtained values agree with those proposed by the theory of hopping over the potential barrier. The temperature variation of ac conductivity can be reasonably interpreted in terms of the correlated barrier hopping model since it obeys the ωs law with a temperature dependent s (s<1) and going down as the temperature is increased. The temperature coefficient of capacitance (TCC) and permittivity (TCP) are evaluated for both thin films and bulk material of $ TlSbS_{2} $. Dielectric Constant (dpeaa)DE-He213 Dielectric Loss (dpeaa)DE-He213 Dielectric Loss Factor (dpeaa)DE-He213 Quantum Mechanical Tunneling (dpeaa)DE-He213 Temperature Dependent Behavior (dpeaa)DE-He213 Deger, D. aut Ulutas, K. aut Yakut, Ş. aut Enthalten in Applied physics Berlin : Springer, 1973 112(2012), 4 vom: 23. Nov., Seite 911-918 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:112 year:2012 number:4 day:23 month:11 pages:911-918 https://dx.doi.org/10.1007/s00339-012-7446-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 112 2012 4 23 11 911-918
spelling	10.1007/s00339-012-7446-9 doi (DE-627)SPR00413429X (SPR)s00339-012-7446-9-e DE-627 ger DE-627 rakwb eng Parto, M. verfasserin aut Structure and dielectric behavior of $ TlSbS_{2} $ 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2012 Abstract A comparison of structure and dielectric properties of $ TlSbS_{2} $ thin films, deposited in different thicknesses (400–4100 Å) by thermal evaporation of $ TlSbS_{2} $ crystals that were grown by the Stockbarger–Bridgman technique and the bulk material properties of $ TlSbS_{2} $ are presented. Dielectric constant ε1 and dielectric loss ε2 have been calculated by measuring capacitance and dielectric loss factor in the frequency range 20 Hz–10 KHz and in the temperature range 273–433 K. It is observed that at 1 kHz frequency and 293 K temperature the dielectric constant of $ TlSbS_{2} $ thin films is ε1=1.8–6 and the dielectric loss of $ TlSbS_{2} $ thin films is ε2=0.5–3 depending on film thickness. In the given intervals, both of dielectric constant and dielectric loss decrease with frequency, but increase with temperature. The maximum barrier height Wm is calculated from the dielectric measurements. The values of Wm for $ TlSbS_{2} $ films and bulk are obtained as 0.56 eV and 0.62 eV at room temperature, respectively. The obtained values agree with those proposed by the theory of hopping over the potential barrier. The temperature variation of ac conductivity can be reasonably interpreted in terms of the correlated barrier hopping model since it obeys the ωs law with a temperature dependent s (s<1) and going down as the temperature is increased. The temperature coefficient of capacitance (TCC) and permittivity (TCP) are evaluated for both thin films and bulk material of $ TlSbS_{2} $. Dielectric Constant (dpeaa)DE-He213 Dielectric Loss (dpeaa)DE-He213 Dielectric Loss Factor (dpeaa)DE-He213 Quantum Mechanical Tunneling (dpeaa)DE-He213 Temperature Dependent Behavior (dpeaa)DE-He213 Deger, D. aut Ulutas, K. aut Yakut, Ş. aut Enthalten in Applied physics Berlin : Springer, 1973 112(2012), 4 vom: 23. Nov., Seite 911-918 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:112 year:2012 number:4 day:23 month:11 pages:911-918 https://dx.doi.org/10.1007/s00339-012-7446-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 112 2012 4 23 11 911-918
allfields_unstemmed	10.1007/s00339-012-7446-9 doi (DE-627)SPR00413429X (SPR)s00339-012-7446-9-e DE-627 ger DE-627 rakwb eng Parto, M. verfasserin aut Structure and dielectric behavior of $ TlSbS_{2} $ 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2012 Abstract A comparison of structure and dielectric properties of $ TlSbS_{2} $ thin films, deposited in different thicknesses (400–4100 Å) by thermal evaporation of $ TlSbS_{2} $ crystals that were grown by the Stockbarger–Bridgman technique and the bulk material properties of $ TlSbS_{2} $ are presented. Dielectric constant ε1 and dielectric loss ε2 have been calculated by measuring capacitance and dielectric loss factor in the frequency range 20 Hz–10 KHz and in the temperature range 273–433 K. It is observed that at 1 kHz frequency and 293 K temperature the dielectric constant of $ TlSbS_{2} $ thin films is ε1=1.8–6 and the dielectric loss of $ TlSbS_{2} $ thin films is ε2=0.5–3 depending on film thickness. In the given intervals, both of dielectric constant and dielectric loss decrease with frequency, but increase with temperature. The maximum barrier height Wm is calculated from the dielectric measurements. The values of Wm for $ TlSbS_{2} $ films and bulk are obtained as 0.56 eV and 0.62 eV at room temperature, respectively. The obtained values agree with those proposed by the theory of hopping over the potential barrier. The temperature variation of ac conductivity can be reasonably interpreted in terms of the correlated barrier hopping model since it obeys the ωs law with a temperature dependent s (s<1) and going down as the temperature is increased. The temperature coefficient of capacitance (TCC) and permittivity (TCP) are evaluated for both thin films and bulk material of $ TlSbS_{2} $. Dielectric Constant (dpeaa)DE-He213 Dielectric Loss (dpeaa)DE-He213 Dielectric Loss Factor (dpeaa)DE-He213 Quantum Mechanical Tunneling (dpeaa)DE-He213 Temperature Dependent Behavior (dpeaa)DE-He213 Deger, D. aut Ulutas, K. aut Yakut, Ş. aut Enthalten in Applied physics Berlin : Springer, 1973 112(2012), 4 vom: 23. Nov., Seite 911-918 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:112 year:2012 number:4 day:23 month:11 pages:911-918 https://dx.doi.org/10.1007/s00339-012-7446-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 112 2012 4 23 11 911-918
allfieldsGer	10.1007/s00339-012-7446-9 doi (DE-627)SPR00413429X (SPR)s00339-012-7446-9-e DE-627 ger DE-627 rakwb eng Parto, M. verfasserin aut Structure and dielectric behavior of $ TlSbS_{2} $ 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2012 Abstract A comparison of structure and dielectric properties of $ TlSbS_{2} $ thin films, deposited in different thicknesses (400–4100 Å) by thermal evaporation of $ TlSbS_{2} $ crystals that were grown by the Stockbarger–Bridgman technique and the bulk material properties of $ TlSbS_{2} $ are presented. Dielectric constant ε1 and dielectric loss ε2 have been calculated by measuring capacitance and dielectric loss factor in the frequency range 20 Hz–10 KHz and in the temperature range 273–433 K. It is observed that at 1 kHz frequency and 293 K temperature the dielectric constant of $ TlSbS_{2} $ thin films is ε1=1.8–6 and the dielectric loss of $ TlSbS_{2} $ thin films is ε2=0.5–3 depending on film thickness. In the given intervals, both of dielectric constant and dielectric loss decrease with frequency, but increase with temperature. The maximum barrier height Wm is calculated from the dielectric measurements. The values of Wm for $ TlSbS_{2} $ films and bulk are obtained as 0.56 eV and 0.62 eV at room temperature, respectively. The obtained values agree with those proposed by the theory of hopping over the potential barrier. The temperature variation of ac conductivity can be reasonably interpreted in terms of the correlated barrier hopping model since it obeys the ωs law with a temperature dependent s (s<1) and going down as the temperature is increased. The temperature coefficient of capacitance (TCC) and permittivity (TCP) are evaluated for both thin films and bulk material of $ TlSbS_{2} $. Dielectric Constant (dpeaa)DE-He213 Dielectric Loss (dpeaa)DE-He213 Dielectric Loss Factor (dpeaa)DE-He213 Quantum Mechanical Tunneling (dpeaa)DE-He213 Temperature Dependent Behavior (dpeaa)DE-He213 Deger, D. aut Ulutas, K. aut Yakut, Ş. aut Enthalten in Applied physics Berlin : Springer, 1973 112(2012), 4 vom: 23. Nov., Seite 911-918 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:112 year:2012 number:4 day:23 month:11 pages:911-918 https://dx.doi.org/10.1007/s00339-012-7446-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 112 2012 4 23 11 911-918
allfieldsSound	10.1007/s00339-012-7446-9 doi (DE-627)SPR00413429X (SPR)s00339-012-7446-9-e DE-627 ger DE-627 rakwb eng Parto, M. verfasserin aut Structure and dielectric behavior of $ TlSbS_{2} $ 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2012 Abstract A comparison of structure and dielectric properties of $ TlSbS_{2} $ thin films, deposited in different thicknesses (400–4100 Å) by thermal evaporation of $ TlSbS_{2} $ crystals that were grown by the Stockbarger–Bridgman technique and the bulk material properties of $ TlSbS_{2} $ are presented. Dielectric constant ε1 and dielectric loss ε2 have been calculated by measuring capacitance and dielectric loss factor in the frequency range 20 Hz–10 KHz and in the temperature range 273–433 K. It is observed that at 1 kHz frequency and 293 K temperature the dielectric constant of $ TlSbS_{2} $ thin films is ε1=1.8–6 and the dielectric loss of $ TlSbS_{2} $ thin films is ε2=0.5–3 depending on film thickness. In the given intervals, both of dielectric constant and dielectric loss decrease with frequency, but increase with temperature. The maximum barrier height Wm is calculated from the dielectric measurements. The values of Wm for $ TlSbS_{2} $ films and bulk are obtained as 0.56 eV and 0.62 eV at room temperature, respectively. The obtained values agree with those proposed by the theory of hopping over the potential barrier. The temperature variation of ac conductivity can be reasonably interpreted in terms of the correlated barrier hopping model since it obeys the ωs law with a temperature dependent s (s<1) and going down as the temperature is increased. The temperature coefficient of capacitance (TCC) and permittivity (TCP) are evaluated for both thin films and bulk material of $ TlSbS_{2} $. Dielectric Constant (dpeaa)DE-He213 Dielectric Loss (dpeaa)DE-He213 Dielectric Loss Factor (dpeaa)DE-He213 Quantum Mechanical Tunneling (dpeaa)DE-He213 Temperature Dependent Behavior (dpeaa)DE-He213 Deger, D. aut Ulutas, K. aut Yakut, Ş. aut Enthalten in Applied physics Berlin : Springer, 1973 112(2012), 4 vom: 23. Nov., Seite 911-918 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:112 year:2012 number:4 day:23 month:11 pages:911-918 https://dx.doi.org/10.1007/s00339-012-7446-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 112 2012 4 23 11 911-918
language	English
source	Enthalten in Applied physics 112(2012), 4 vom: 23. Nov., Seite 911-918 volume:112 year:2012 number:4 day:23 month:11 pages:911-918
sourceStr	Enthalten in Applied physics 112(2012), 4 vom: 23. Nov., Seite 911-918 volume:112 year:2012 number:4 day:23 month:11 pages:911-918
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Dielectric Constant Dielectric Loss Dielectric Loss Factor Quantum Mechanical Tunneling Temperature Dependent Behavior
isfreeaccess_bool	false
container_title	Applied physics
authorswithroles_txt_mv	Parto, M. @@aut@@ Deger, D. @@aut@@ Ulutas, K. @@aut@@ Yakut, Ş. @@aut@@
publishDateDaySort_date	2012-11-23T00:00:00Z
hierarchy_top_id	235503231
id	SPR00413429X
language_de	englisch
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author	Parto, M.
spellingShingle	Parto, M. misc Dielectric Constant misc Dielectric Loss misc Dielectric Loss Factor misc Quantum Mechanical Tunneling misc Temperature Dependent Behavior Structure and dielectric behavior of $ TlSbS_{2} $
authorStr	Parto, M.
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topic_title	Structure and dielectric behavior of $ TlSbS_{2} $ Dielectric Constant (dpeaa)DE-He213 Dielectric Loss (dpeaa)DE-He213 Dielectric Loss Factor (dpeaa)DE-He213 Quantum Mechanical Tunneling (dpeaa)DE-He213 Temperature Dependent Behavior (dpeaa)DE-He213
topic	misc Dielectric Constant misc Dielectric Loss misc Dielectric Loss Factor misc Quantum Mechanical Tunneling misc Temperature Dependent Behavior
topic_unstemmed	misc Dielectric Constant misc Dielectric Loss misc Dielectric Loss Factor misc Quantum Mechanical Tunneling misc Temperature Dependent Behavior
topic_browse	misc Dielectric Constant misc Dielectric Loss misc Dielectric Loss Factor misc Quantum Mechanical Tunneling misc Temperature Dependent Behavior
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
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title	Structure and dielectric behavior of $ TlSbS_{2} $
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title_full	Structure and dielectric behavior of $ TlSbS_{2} $
author_sort	Parto, M.
journal	Applied physics
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container_start_page	911
author_browse	Parto, M. Deger, D. Ulutas, K. Yakut, Ş.
container_volume	112
format_se	Elektronische Aufsätze
author-letter	Parto, M.
doi_str_mv	10.1007/s00339-012-7446-9
title_sort	structure and dielectric behavior of $ tlsbs_{2} $
title_auth	Structure and dielectric behavior of $ TlSbS_{2} $
abstract	Abstract A comparison of structure and dielectric properties of $ TlSbS_{2} $ thin films, deposited in different thicknesses (400–4100 Å) by thermal evaporation of $ TlSbS_{2} $ crystals that were grown by the Stockbarger–Bridgman technique and the bulk material properties of $ TlSbS_{2} $ are presented. Dielectric constant ε1 and dielectric loss ε2 have been calculated by measuring capacitance and dielectric loss factor in the frequency range 20 Hz–10 KHz and in the temperature range 273–433 K. It is observed that at 1 kHz frequency and 293 K temperature the dielectric constant of $ TlSbS_{2} $ thin films is ε1=1.8–6 and the dielectric loss of $ TlSbS_{2} $ thin films is ε2=0.5–3 depending on film thickness. In the given intervals, both of dielectric constant and dielectric loss decrease with frequency, but increase with temperature. The maximum barrier height Wm is calculated from the dielectric measurements. The values of Wm for $ TlSbS_{2} $ films and bulk are obtained as 0.56 eV and 0.62 eV at room temperature, respectively. The obtained values agree with those proposed by the theory of hopping over the potential barrier. The temperature variation of ac conductivity can be reasonably interpreted in terms of the correlated barrier hopping model since it obeys the ωs law with a temperature dependent s (s<1) and going down as the temperature is increased. The temperature coefficient of capacitance (TCC) and permittivity (TCP) are evaluated for both thin films and bulk material of $ TlSbS_{2} $. © Springer-Verlag Berlin Heidelberg 2012
abstractGer	Abstract A comparison of structure and dielectric properties of $ TlSbS_{2} $ thin films, deposited in different thicknesses (400–4100 Å) by thermal evaporation of $ TlSbS_{2} $ crystals that were grown by the Stockbarger–Bridgman technique and the bulk material properties of $ TlSbS_{2} $ are presented. Dielectric constant ε1 and dielectric loss ε2 have been calculated by measuring capacitance and dielectric loss factor in the frequency range 20 Hz–10 KHz and in the temperature range 273–433 K. It is observed that at 1 kHz frequency and 293 K temperature the dielectric constant of $ TlSbS_{2} $ thin films is ε1=1.8–6 and the dielectric loss of $ TlSbS_{2} $ thin films is ε2=0.5–3 depending on film thickness. In the given intervals, both of dielectric constant and dielectric loss decrease with frequency, but increase with temperature. The maximum barrier height Wm is calculated from the dielectric measurements. The values of Wm for $ TlSbS_{2} $ films and bulk are obtained as 0.56 eV and 0.62 eV at room temperature, respectively. The obtained values agree with those proposed by the theory of hopping over the potential barrier. The temperature variation of ac conductivity can be reasonably interpreted in terms of the correlated barrier hopping model since it obeys the ωs law with a temperature dependent s (s<1) and going down as the temperature is increased. The temperature coefficient of capacitance (TCC) and permittivity (TCP) are evaluated for both thin films and bulk material of $ TlSbS_{2} $. © Springer-Verlag Berlin Heidelberg 2012
abstract_unstemmed	Abstract A comparison of structure and dielectric properties of $ TlSbS_{2} $ thin films, deposited in different thicknesses (400–4100 Å) by thermal evaporation of $ TlSbS_{2} $ crystals that were grown by the Stockbarger–Bridgman technique and the bulk material properties of $ TlSbS_{2} $ are presented. Dielectric constant ε1 and dielectric loss ε2 have been calculated by measuring capacitance and dielectric loss factor in the frequency range 20 Hz–10 KHz and in the temperature range 273–433 K. It is observed that at 1 kHz frequency and 293 K temperature the dielectric constant of $ TlSbS_{2} $ thin films is ε1=1.8–6 and the dielectric loss of $ TlSbS_{2} $ thin films is ε2=0.5–3 depending on film thickness. In the given intervals, both of dielectric constant and dielectric loss decrease with frequency, but increase with temperature. The maximum barrier height Wm is calculated from the dielectric measurements. The values of Wm for $ TlSbS_{2} $ films and bulk are obtained as 0.56 eV and 0.62 eV at room temperature, respectively. The obtained values agree with those proposed by the theory of hopping over the potential barrier. The temperature variation of ac conductivity can be reasonably interpreted in terms of the correlated barrier hopping model since it obeys the ωs law with a temperature dependent s (s<1) and going down as the temperature is increased. The temperature coefficient of capacitance (TCC) and permittivity (TCP) are evaluated for both thin films and bulk material of $ TlSbS_{2} $. © Springer-Verlag Berlin Heidelberg 2012
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title_short	Structure and dielectric behavior of $ TlSbS_{2} $
url	https://dx.doi.org/10.1007/s00339-012-7446-9
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author2	Deger, D. Ulutas, K. Yakut, Ş.
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up_date	2024-07-03T23:46:52.996Z
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fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR00413429X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230328161602.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201001s2012 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s00339-012-7446-9</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR00413429X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s00339-012-7446-9-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Parto, M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Structure and dielectric behavior of $ TlSbS_{2} $</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2012</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer-Verlag Berlin Heidelberg 2012</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract A comparison of structure and dielectric properties of $ TlSbS_{2} $ thin films, deposited in different thicknesses (400–4100 Å) by thermal evaporation of $ TlSbS_{2} $ crystals that were grown by the Stockbarger–Bridgman technique and the bulk material properties of $ TlSbS_{2} $ are presented. Dielectric constant ε1 and dielectric loss ε2 have been calculated by measuring capacitance and dielectric loss factor in the frequency range 20 Hz–10 KHz and in the temperature range 273–433 K. It is observed that at 1 kHz frequency and 293 K temperature the dielectric constant of $ TlSbS_{2} $ thin films is ε1=1.8–6 and the dielectric loss of $ TlSbS_{2} $ thin films is ε2=0.5–3 depending on film thickness. In the given intervals, both of dielectric constant and dielectric loss decrease with frequency, but increase with temperature. The maximum barrier height Wm is calculated from the dielectric measurements. The values of Wm for $ TlSbS_{2} $ films and bulk are obtained as 0.56 eV and 0.62 eV at room temperature, respectively. The obtained values agree with those proposed by the theory of hopping over the potential barrier. The temperature variation of ac conductivity can be reasonably interpreted in terms of the correlated barrier hopping model since it obeys the ωs law with a temperature dependent s (s<1) and going down as the temperature is increased. The temperature coefficient of capacitance (TCC) and permittivity (TCP) are evaluated for both thin films and bulk material of $ TlSbS_{2} $.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Dielectric Constant</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Dielectric Loss</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Dielectric Loss Factor</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Quantum Mechanical Tunneling</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Temperature Dependent Behavior</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Deger, D.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ulutas, K.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yakut, Ş.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Applied physics</subfield><subfield code="d">Berlin : Springer, 1973</subfield><subfield code="g">112(2012), 4 vom: 23. 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Structure and dielectric behavior of $ TlSbS_{2} $

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