High-temperature impedance spectroscopy of $ BaFe_{0.5} %$ Nb_{0.5} %$ O_{3} $ ceramics doped with $ Bi_{0.5} %$ Na_{0.5} %$ TiO_{3} $
Abstract $ Bi_{0.5} %$ Na_{0.5} %$ TiO_{3} $ (BNT)-doped $ BaFe_{0.5} %$ Nb_{0.5} %$ O_{3} $ (BFN) ceramics were synthesized by a two-step solid-state reaction. Temperature dependence of dielectric properties measured at different frequencies was investigated over broad temperature and frequency ran...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Huang, Yanmin [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2013 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer-Verlag Berlin Heidelberg 2013 |
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| Übergeordnetes Werk: |
Enthalten in: Applied physics - Berlin : Springer, 1973, 114(2013), 3 vom: 10. Mai, Seite 891-896 |
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| Übergeordnetes Werk: |
volume:114 ; year:2013 ; number:3 ; day:10 ; month:05 ; pages:891-896 |
| Links: |
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| DOI / URN: |
10.1007/s00339-013-7735-y |
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| Katalog-ID: |
SPR004137302 |
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| 245 | 1 | 0 | |a High-temperature impedance spectroscopy of $ BaFe_{0.5} %$ Nb_{0.5} %$ O_{3} $ ceramics doped with $ Bi_{0.5} %$ Na_{0.5} %$ TiO_{3} $ |
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| 520 | |a Abstract $ Bi_{0.5} %$ Na_{0.5} %$ TiO_{3} $ (BNT)-doped $ BaFe_{0.5} %$ Nb_{0.5} %$ O_{3} $ (BFN) ceramics were synthesized by a two-step solid-state reaction. Temperature dependence of dielectric properties measured at different frequencies was investigated over broad temperature and frequency ranges. Impedance spectroscopy and universal dielectric response were employed to study the relaxation behavior and conductivity mechanism of the ceramics in a frequency range from 40 Hz to 100 MHz and a temperature range from 300 K to 800 K. The complex plane impedance data revealed the bulk and grain boundary contributions toward conductivity processes in the form of semicircular arcs. The high-temperature conductivity of ceramics is attributable to thermally activated second ionized oxygen vacancy. | ||
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| 650 | 4 | |a Relaxation Frequency |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Giant Dielectric Constant |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Shi, Danping |4 aut | |
| 700 | 1 | |a Liu, Laijun |4 aut | |
| 700 | 1 | |a Li, Guizhong |4 aut | |
| 700 | 1 | |a Zheng, Shaoying |4 aut | |
| 700 | 1 | |a Fang, Liang |4 aut | |
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10.1007/s00339-013-7735-y doi (DE-627)SPR004137302 (SPR)s00339-013-7735-y-e DE-627 ger DE-627 rakwb eng Huang, Yanmin verfasserin aut High-temperature impedance spectroscopy of $ BaFe_{0.5} %$ Nb_{0.5} %$ O_{3} $ ceramics doped with $ Bi_{0.5} %$ Na_{0.5} %$ TiO_{3} $ 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2013 Abstract $ Bi_{0.5} %$ Na_{0.5} %$ TiO_{3} $ (BNT)-doped $ BaFe_{0.5} %$ Nb_{0.5} %$ O_{3} $ (BFN) ceramics were synthesized by a two-step solid-state reaction. Temperature dependence of dielectric properties measured at different frequencies was investigated over broad temperature and frequency ranges. Impedance spectroscopy and universal dielectric response were employed to study the relaxation behavior and conductivity mechanism of the ceramics in a frequency range from 40 Hz to 100 MHz and a temperature range from 300 K to 800 K. The complex plane impedance data revealed the bulk and grain boundary contributions toward conductivity processes in the form of semicircular arcs. The high-temperature conductivity of ceramics is attributable to thermally activated second ionized oxygen vacancy. Oxygen Vacancy (dpeaa)DE-He213 Dielectric Relaxation (dpeaa)DE-He213 Interface Polarization (dpeaa)DE-He213 Relaxation Frequency (dpeaa)DE-He213 Giant Dielectric Constant (dpeaa)DE-He213 Shi, Danping aut Liu, Laijun aut Li, Guizhong aut Zheng, Shaoying aut Fang, Liang aut Enthalten in Applied physics Berlin : Springer, 1973 114(2013), 3 vom: 10. Mai, Seite 891-896 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:114 year:2013 number:3 day:10 month:05 pages:891-896 https://dx.doi.org/10.1007/s00339-013-7735-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 114 2013 3 10 05 891-896 |
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10.1007/s00339-013-7735-y doi (DE-627)SPR004137302 (SPR)s00339-013-7735-y-e DE-627 ger DE-627 rakwb eng Huang, Yanmin verfasserin aut High-temperature impedance spectroscopy of $ BaFe_{0.5} %$ Nb_{0.5} %$ O_{3} $ ceramics doped with $ Bi_{0.5} %$ Na_{0.5} %$ TiO_{3} $ 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2013 Abstract $ Bi_{0.5} %$ Na_{0.5} %$ TiO_{3} $ (BNT)-doped $ BaFe_{0.5} %$ Nb_{0.5} %$ O_{3} $ (BFN) ceramics were synthesized by a two-step solid-state reaction. Temperature dependence of dielectric properties measured at different frequencies was investigated over broad temperature and frequency ranges. Impedance spectroscopy and universal dielectric response were employed to study the relaxation behavior and conductivity mechanism of the ceramics in a frequency range from 40 Hz to 100 MHz and a temperature range from 300 K to 800 K. The complex plane impedance data revealed the bulk and grain boundary contributions toward conductivity processes in the form of semicircular arcs. The high-temperature conductivity of ceramics is attributable to thermally activated second ionized oxygen vacancy. Oxygen Vacancy (dpeaa)DE-He213 Dielectric Relaxation (dpeaa)DE-He213 Interface Polarization (dpeaa)DE-He213 Relaxation Frequency (dpeaa)DE-He213 Giant Dielectric Constant (dpeaa)DE-He213 Shi, Danping aut Liu, Laijun aut Li, Guizhong aut Zheng, Shaoying aut Fang, Liang aut Enthalten in Applied physics Berlin : Springer, 1973 114(2013), 3 vom: 10. Mai, Seite 891-896 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:114 year:2013 number:3 day:10 month:05 pages:891-896 https://dx.doi.org/10.1007/s00339-013-7735-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 114 2013 3 10 05 891-896 |
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10.1007/s00339-013-7735-y doi (DE-627)SPR004137302 (SPR)s00339-013-7735-y-e DE-627 ger DE-627 rakwb eng Huang, Yanmin verfasserin aut High-temperature impedance spectroscopy of $ BaFe_{0.5} %$ Nb_{0.5} %$ O_{3} $ ceramics doped with $ Bi_{0.5} %$ Na_{0.5} %$ TiO_{3} $ 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2013 Abstract $ Bi_{0.5} %$ Na_{0.5} %$ TiO_{3} $ (BNT)-doped $ BaFe_{0.5} %$ Nb_{0.5} %$ O_{3} $ (BFN) ceramics were synthesized by a two-step solid-state reaction. Temperature dependence of dielectric properties measured at different frequencies was investigated over broad temperature and frequency ranges. Impedance spectroscopy and universal dielectric response were employed to study the relaxation behavior and conductivity mechanism of the ceramics in a frequency range from 40 Hz to 100 MHz and a temperature range from 300 K to 800 K. The complex plane impedance data revealed the bulk and grain boundary contributions toward conductivity processes in the form of semicircular arcs. The high-temperature conductivity of ceramics is attributable to thermally activated second ionized oxygen vacancy. Oxygen Vacancy (dpeaa)DE-He213 Dielectric Relaxation (dpeaa)DE-He213 Interface Polarization (dpeaa)DE-He213 Relaxation Frequency (dpeaa)DE-He213 Giant Dielectric Constant (dpeaa)DE-He213 Shi, Danping aut Liu, Laijun aut Li, Guizhong aut Zheng, Shaoying aut Fang, Liang aut Enthalten in Applied physics Berlin : Springer, 1973 114(2013), 3 vom: 10. Mai, Seite 891-896 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:114 year:2013 number:3 day:10 month:05 pages:891-896 https://dx.doi.org/10.1007/s00339-013-7735-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 114 2013 3 10 05 891-896 |
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10.1007/s00339-013-7735-y doi (DE-627)SPR004137302 (SPR)s00339-013-7735-y-e DE-627 ger DE-627 rakwb eng Huang, Yanmin verfasserin aut High-temperature impedance spectroscopy of $ BaFe_{0.5} %$ Nb_{0.5} %$ O_{3} $ ceramics doped with $ Bi_{0.5} %$ Na_{0.5} %$ TiO_{3} $ 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2013 Abstract $ Bi_{0.5} %$ Na_{0.5} %$ TiO_{3} $ (BNT)-doped $ BaFe_{0.5} %$ Nb_{0.5} %$ O_{3} $ (BFN) ceramics were synthesized by a two-step solid-state reaction. Temperature dependence of dielectric properties measured at different frequencies was investigated over broad temperature and frequency ranges. Impedance spectroscopy and universal dielectric response were employed to study the relaxation behavior and conductivity mechanism of the ceramics in a frequency range from 40 Hz to 100 MHz and a temperature range from 300 K to 800 K. The complex plane impedance data revealed the bulk and grain boundary contributions toward conductivity processes in the form of semicircular arcs. The high-temperature conductivity of ceramics is attributable to thermally activated second ionized oxygen vacancy. Oxygen Vacancy (dpeaa)DE-He213 Dielectric Relaxation (dpeaa)DE-He213 Interface Polarization (dpeaa)DE-He213 Relaxation Frequency (dpeaa)DE-He213 Giant Dielectric Constant (dpeaa)DE-He213 Shi, Danping aut Liu, Laijun aut Li, Guizhong aut Zheng, Shaoying aut Fang, Liang aut Enthalten in Applied physics Berlin : Springer, 1973 114(2013), 3 vom: 10. Mai, Seite 891-896 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:114 year:2013 number:3 day:10 month:05 pages:891-896 https://dx.doi.org/10.1007/s00339-013-7735-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 114 2013 3 10 05 891-896 |
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10.1007/s00339-013-7735-y doi (DE-627)SPR004137302 (SPR)s00339-013-7735-y-e DE-627 ger DE-627 rakwb eng Huang, Yanmin verfasserin aut High-temperature impedance spectroscopy of $ BaFe_{0.5} %$ Nb_{0.5} %$ O_{3} $ ceramics doped with $ Bi_{0.5} %$ Na_{0.5} %$ TiO_{3} $ 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2013 Abstract $ Bi_{0.5} %$ Na_{0.5} %$ TiO_{3} $ (BNT)-doped $ BaFe_{0.5} %$ Nb_{0.5} %$ O_{3} $ (BFN) ceramics were synthesized by a two-step solid-state reaction. Temperature dependence of dielectric properties measured at different frequencies was investigated over broad temperature and frequency ranges. Impedance spectroscopy and universal dielectric response were employed to study the relaxation behavior and conductivity mechanism of the ceramics in a frequency range from 40 Hz to 100 MHz and a temperature range from 300 K to 800 K. The complex plane impedance data revealed the bulk and grain boundary contributions toward conductivity processes in the form of semicircular arcs. The high-temperature conductivity of ceramics is attributable to thermally activated second ionized oxygen vacancy. Oxygen Vacancy (dpeaa)DE-He213 Dielectric Relaxation (dpeaa)DE-He213 Interface Polarization (dpeaa)DE-He213 Relaxation Frequency (dpeaa)DE-He213 Giant Dielectric Constant (dpeaa)DE-He213 Shi, Danping aut Liu, Laijun aut Li, Guizhong aut Zheng, Shaoying aut Fang, Liang aut Enthalten in Applied physics Berlin : Springer, 1973 114(2013), 3 vom: 10. Mai, Seite 891-896 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:114 year:2013 number:3 day:10 month:05 pages:891-896 https://dx.doi.org/10.1007/s00339-013-7735-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 114 2013 3 10 05 891-896 |
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Enthalten in Applied physics 114(2013), 3 vom: 10. Mai, Seite 891-896 volume:114 year:2013 number:3 day:10 month:05 pages:891-896 |
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Oxygen Vacancy Dielectric Relaxation Interface Polarization Relaxation Frequency Giant Dielectric Constant |
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Huang, Yanmin @@aut@@ Shi, Danping @@aut@@ Liu, Laijun @@aut@@ Li, Guizhong @@aut@@ Zheng, Shaoying @@aut@@ Fang, Liang @@aut@@ |
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Temperature dependence of dielectric properties measured at different frequencies was investigated over broad temperature and frequency ranges. Impedance spectroscopy and universal dielectric response were employed to study the relaxation behavior and conductivity mechanism of the ceramics in a frequency range from 40 Hz to 100 MHz and a temperature range from 300 K to 800 K. The complex plane impedance data revealed the bulk and grain boundary contributions toward conductivity processes in the form of semicircular arcs. 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Huang, Yanmin |
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Huang, Yanmin misc Oxygen Vacancy misc Dielectric Relaxation misc Interface Polarization misc Relaxation Frequency misc Giant Dielectric Constant High-temperature impedance spectroscopy of $ BaFe_{0.5} %$ Nb_{0.5} %$ O_{3} $ ceramics doped with $ Bi_{0.5} %$ Na_{0.5} %$ TiO_{3} $ |
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High-temperature impedance spectroscopy of $ BaFe_{0.5} %$ Nb_{0.5} %$ O_{3} $ ceramics doped with $ Bi_{0.5} %$ Na_{0.5} %$ TiO_{3} $ Oxygen Vacancy (dpeaa)DE-He213 Dielectric Relaxation (dpeaa)DE-He213 Interface Polarization (dpeaa)DE-He213 Relaxation Frequency (dpeaa)DE-He213 Giant Dielectric Constant (dpeaa)DE-He213 |
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High-temperature impedance spectroscopy of $ BaFe_{0.5} %$ Nb_{0.5} %$ O_{3} $ ceramics doped with $ Bi_{0.5} %$ Na_{0.5} %$ TiO_{3} $ |
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High-temperature impedance spectroscopy of $ BaFe_{0.5} %$ Nb_{0.5} %$ O_{3} $ ceramics doped with $ Bi_{0.5} %$ Na_{0.5} %$ TiO_{3} $ |
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Huang, Yanmin Shi, Danping Liu, Laijun Li, Guizhong Zheng, Shaoying Fang, Liang |
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high-temperature impedance spectroscopy of $ bafe_{0.5} %$ nb_{0.5} %$ o_{3} $ ceramics doped with $ bi_{0.5} %$ na_{0.5} %$ tio_{3} $ |
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High-temperature impedance spectroscopy of $ BaFe_{0.5} %$ Nb_{0.5} %$ O_{3} $ ceramics doped with $ Bi_{0.5} %$ Na_{0.5} %$ TiO_{3} $ |
| abstract |
Abstract $ Bi_{0.5} %$ Na_{0.5} %$ TiO_{3} $ (BNT)-doped $ BaFe_{0.5} %$ Nb_{0.5} %$ O_{3} $ (BFN) ceramics were synthesized by a two-step solid-state reaction. Temperature dependence of dielectric properties measured at different frequencies was investigated over broad temperature and frequency ranges. Impedance spectroscopy and universal dielectric response were employed to study the relaxation behavior and conductivity mechanism of the ceramics in a frequency range from 40 Hz to 100 MHz and a temperature range from 300 K to 800 K. The complex plane impedance data revealed the bulk and grain boundary contributions toward conductivity processes in the form of semicircular arcs. The high-temperature conductivity of ceramics is attributable to thermally activated second ionized oxygen vacancy. © Springer-Verlag Berlin Heidelberg 2013 |
| abstractGer |
Abstract $ Bi_{0.5} %$ Na_{0.5} %$ TiO_{3} $ (BNT)-doped $ BaFe_{0.5} %$ Nb_{0.5} %$ O_{3} $ (BFN) ceramics were synthesized by a two-step solid-state reaction. Temperature dependence of dielectric properties measured at different frequencies was investigated over broad temperature and frequency ranges. Impedance spectroscopy and universal dielectric response were employed to study the relaxation behavior and conductivity mechanism of the ceramics in a frequency range from 40 Hz to 100 MHz and a temperature range from 300 K to 800 K. The complex plane impedance data revealed the bulk and grain boundary contributions toward conductivity processes in the form of semicircular arcs. The high-temperature conductivity of ceramics is attributable to thermally activated second ionized oxygen vacancy. © Springer-Verlag Berlin Heidelberg 2013 |
| abstract_unstemmed |
Abstract $ Bi_{0.5} %$ Na_{0.5} %$ TiO_{3} $ (BNT)-doped $ BaFe_{0.5} %$ Nb_{0.5} %$ O_{3} $ (BFN) ceramics were synthesized by a two-step solid-state reaction. Temperature dependence of dielectric properties measured at different frequencies was investigated over broad temperature and frequency ranges. Impedance spectroscopy and universal dielectric response were employed to study the relaxation behavior and conductivity mechanism of the ceramics in a frequency range from 40 Hz to 100 MHz and a temperature range from 300 K to 800 K. The complex plane impedance data revealed the bulk and grain boundary contributions toward conductivity processes in the form of semicircular arcs. The high-temperature conductivity of ceramics is attributable to thermally activated second ionized oxygen vacancy. © Springer-Verlag Berlin Heidelberg 2013 |
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3 |
| title_short |
High-temperature impedance spectroscopy of $ BaFe_{0.5} %$ Nb_{0.5} %$ O_{3} $ ceramics doped with $ Bi_{0.5} %$ Na_{0.5} %$ TiO_{3} $ |
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https://dx.doi.org/10.1007/s00339-013-7735-y |
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| author2 |
Shi, Danping Liu, Laijun Li, Guizhong Zheng, Shaoying Fang, Liang |
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Shi, Danping Liu, Laijun Li, Guizhong Zheng, Shaoying Fang, Liang |
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| doi_str |
10.1007/s00339-013-7735-y |
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2024-07-03T23:47:48.594Z |
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| score |
7.399967 |