Superlattice-like $ SnSb_{4} $/$ Ga_{3} %$ Sb_{7} $ thin films for ultrafast switching phase-change memory application

Abstract The carrier concentration of Sb-rich phase $ SnSb_{4} $, $ Ga_{3} %$ Sb_{7} $ and superlattice-like [$ SnSb_{4} $(3.5 nm)/$ Ga_{3} %$ Sb_{7} $(4 nm)]7 (SLL-7) thin films as a function of annealing temperature was investigated to explain the reason of resistance change. The activation energy...
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Autor*in:	Hu, Yifeng [verfasserIn] He, Zifang Zhai, Jiwei Wu, Pengzhi Lai, Tianshu Song, Sannian Song, Zhitang

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2015

Schlagwörter:	Kissinger Equation Raman Scatter Spectrum Avrami Index Neodymium Yttrium Film Surface Roughness

Anmerkung:	© Springer-Verlag Berlin Heidelberg 2015

Übergeordnetes Werk:	Enthalten in: Applied physics - Berlin : Springer, 1973, 121(2015), 3 vom: 12. Sept., Seite 1125-1131
Übergeordnetes Werk:	volume:121 ; year:2015 ; number:3 ; day:12 ; month:09 ; pages:1125-1131

Links:	Volltext

DOI / URN:	10.1007/s00339-015-9470-z

Katalog-ID:	SPR004154746

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520			\|a Abstract The carrier concentration of Sb-rich phase $ SnSb_{4} $, $ Ga_{3} %$ Sb_{7} $ and superlattice-like [$ SnSb_{4} $(3.5 nm)/$ Ga_{3} %$ Sb_{7} $(4 nm)]7 (SLL-7) thin films as a function of annealing temperature was investigated to explain the reason of resistance change. The activation energy for crystallization was calculated with a Kissinger equation to estimate the thermal stability. In order to illuminate the transition mechanisms, the crystallization kinetics of SLL-7 were explored by using Johnson–Mehl–Avrami theory. The obtained values of Avrami indexes indicate that a one-dimensional growth-dominated mechanism is responsible for the set transition of SLL-7 thin film. X-ray diffractometer and Raman scattering spectra were recorded to investigate the change of crystalline structure. The measurement of atomic force microscopy indicated that SLL-7 thin film has a good smooth surface. A picosecond laser pump-probe system was used to test and verify phase-change speed of the SLL-7 thin film.
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700	1		\|a Song, Sannian \|4 aut
700	1		\|a Song, Zhitang \|4 aut
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912			\|a GBV_ILN_151
912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_206
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_250
912			\|a GBV_ILN_267
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
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912			\|a GBV_ILN_2015
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912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2031
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912			\|a GBV_ILN_2037
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912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2056
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2070
912			\|a GBV_ILN_2086
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2107
912			\|a GBV_ILN_2108
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allfields	10.1007/s00339-015-9470-z doi (DE-627)SPR004154746 (SPR)s00339-015-9470-z-e DE-627 ger DE-627 rakwb eng Hu, Yifeng verfasserin aut Superlattice-like $ SnSb_{4} $/$ Ga_{3} %$ Sb_{7} $ thin films for ultrafast switching phase-change memory application 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2015 Abstract The carrier concentration of Sb-rich phase $ SnSb_{4} $, $ Ga_{3} %$ Sb_{7} $ and superlattice-like [$ SnSb_{4} $(3.5 nm)/$ Ga_{3} %$ Sb_{7} $(4 nm)]7 (SLL-7) thin films as a function of annealing temperature was investigated to explain the reason of resistance change. The activation energy for crystallization was calculated with a Kissinger equation to estimate the thermal stability. In order to illuminate the transition mechanisms, the crystallization kinetics of SLL-7 were explored by using Johnson–Mehl–Avrami theory. The obtained values of Avrami indexes indicate that a one-dimensional growth-dominated mechanism is responsible for the set transition of SLL-7 thin film. X-ray diffractometer and Raman scattering spectra were recorded to investigate the change of crystalline structure. The measurement of atomic force microscopy indicated that SLL-7 thin film has a good smooth surface. A picosecond laser pump-probe system was used to test and verify phase-change speed of the SLL-7 thin film. Kissinger Equation (dpeaa)DE-He213 Raman Scatter Spectrum (dpeaa)DE-He213 Avrami Index (dpeaa)DE-He213 Neodymium Yttrium (dpeaa)DE-He213 Film Surface Roughness (dpeaa)DE-He213 He, Zifang aut Zhai, Jiwei aut Wu, Pengzhi aut Lai, Tianshu aut Song, Sannian aut Song, Zhitang aut Enthalten in Applied physics Berlin : Springer, 1973 121(2015), 3 vom: 12. Sept., Seite 1125-1131 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:121 year:2015 number:3 day:12 month:09 pages:1125-1131 https://dx.doi.org/10.1007/s00339-015-9470-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 121 2015 3 12 09 1125-1131
spelling	10.1007/s00339-015-9470-z doi (DE-627)SPR004154746 (SPR)s00339-015-9470-z-e DE-627 ger DE-627 rakwb eng Hu, Yifeng verfasserin aut Superlattice-like $ SnSb_{4} $/$ Ga_{3} %$ Sb_{7} $ thin films for ultrafast switching phase-change memory application 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2015 Abstract The carrier concentration of Sb-rich phase $ SnSb_{4} $, $ Ga_{3} %$ Sb_{7} $ and superlattice-like [$ SnSb_{4} $(3.5 nm)/$ Ga_{3} %$ Sb_{7} $(4 nm)]7 (SLL-7) thin films as a function of annealing temperature was investigated to explain the reason of resistance change. The activation energy for crystallization was calculated with a Kissinger equation to estimate the thermal stability. In order to illuminate the transition mechanisms, the crystallization kinetics of SLL-7 were explored by using Johnson–Mehl–Avrami theory. The obtained values of Avrami indexes indicate that a one-dimensional growth-dominated mechanism is responsible for the set transition of SLL-7 thin film. X-ray diffractometer and Raman scattering spectra were recorded to investigate the change of crystalline structure. The measurement of atomic force microscopy indicated that SLL-7 thin film has a good smooth surface. A picosecond laser pump-probe system was used to test and verify phase-change speed of the SLL-7 thin film. Kissinger Equation (dpeaa)DE-He213 Raman Scatter Spectrum (dpeaa)DE-He213 Avrami Index (dpeaa)DE-He213 Neodymium Yttrium (dpeaa)DE-He213 Film Surface Roughness (dpeaa)DE-He213 He, Zifang aut Zhai, Jiwei aut Wu, Pengzhi aut Lai, Tianshu aut Song, Sannian aut Song, Zhitang aut Enthalten in Applied physics Berlin : Springer, 1973 121(2015), 3 vom: 12. Sept., Seite 1125-1131 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:121 year:2015 number:3 day:12 month:09 pages:1125-1131 https://dx.doi.org/10.1007/s00339-015-9470-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 121 2015 3 12 09 1125-1131
allfields_unstemmed	10.1007/s00339-015-9470-z doi (DE-627)SPR004154746 (SPR)s00339-015-9470-z-e DE-627 ger DE-627 rakwb eng Hu, Yifeng verfasserin aut Superlattice-like $ SnSb_{4} $/$ Ga_{3} %$ Sb_{7} $ thin films for ultrafast switching phase-change memory application 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2015 Abstract The carrier concentration of Sb-rich phase $ SnSb_{4} $, $ Ga_{3} %$ Sb_{7} $ and superlattice-like [$ SnSb_{4} $(3.5 nm)/$ Ga_{3} %$ Sb_{7} $(4 nm)]7 (SLL-7) thin films as a function of annealing temperature was investigated to explain the reason of resistance change. The activation energy for crystallization was calculated with a Kissinger equation to estimate the thermal stability. In order to illuminate the transition mechanisms, the crystallization kinetics of SLL-7 were explored by using Johnson–Mehl–Avrami theory. The obtained values of Avrami indexes indicate that a one-dimensional growth-dominated mechanism is responsible for the set transition of SLL-7 thin film. X-ray diffractometer and Raman scattering spectra were recorded to investigate the change of crystalline structure. The measurement of atomic force microscopy indicated that SLL-7 thin film has a good smooth surface. A picosecond laser pump-probe system was used to test and verify phase-change speed of the SLL-7 thin film. Kissinger Equation (dpeaa)DE-He213 Raman Scatter Spectrum (dpeaa)DE-He213 Avrami Index (dpeaa)DE-He213 Neodymium Yttrium (dpeaa)DE-He213 Film Surface Roughness (dpeaa)DE-He213 He, Zifang aut Zhai, Jiwei aut Wu, Pengzhi aut Lai, Tianshu aut Song, Sannian aut Song, Zhitang aut Enthalten in Applied physics Berlin : Springer, 1973 121(2015), 3 vom: 12. Sept., Seite 1125-1131 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:121 year:2015 number:3 day:12 month:09 pages:1125-1131 https://dx.doi.org/10.1007/s00339-015-9470-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 121 2015 3 12 09 1125-1131
allfieldsGer	10.1007/s00339-015-9470-z doi (DE-627)SPR004154746 (SPR)s00339-015-9470-z-e DE-627 ger DE-627 rakwb eng Hu, Yifeng verfasserin aut Superlattice-like $ SnSb_{4} $/$ Ga_{3} %$ Sb_{7} $ thin films for ultrafast switching phase-change memory application 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2015 Abstract The carrier concentration of Sb-rich phase $ SnSb_{4} $, $ Ga_{3} %$ Sb_{7} $ and superlattice-like [$ SnSb_{4} $(3.5 nm)/$ Ga_{3} %$ Sb_{7} $(4 nm)]7 (SLL-7) thin films as a function of annealing temperature was investigated to explain the reason of resistance change. The activation energy for crystallization was calculated with a Kissinger equation to estimate the thermal stability. In order to illuminate the transition mechanisms, the crystallization kinetics of SLL-7 were explored by using Johnson–Mehl–Avrami theory. The obtained values of Avrami indexes indicate that a one-dimensional growth-dominated mechanism is responsible for the set transition of SLL-7 thin film. X-ray diffractometer and Raman scattering spectra were recorded to investigate the change of crystalline structure. The measurement of atomic force microscopy indicated that SLL-7 thin film has a good smooth surface. A picosecond laser pump-probe system was used to test and verify phase-change speed of the SLL-7 thin film. Kissinger Equation (dpeaa)DE-He213 Raman Scatter Spectrum (dpeaa)DE-He213 Avrami Index (dpeaa)DE-He213 Neodymium Yttrium (dpeaa)DE-He213 Film Surface Roughness (dpeaa)DE-He213 He, Zifang aut Zhai, Jiwei aut Wu, Pengzhi aut Lai, Tianshu aut Song, Sannian aut Song, Zhitang aut Enthalten in Applied physics Berlin : Springer, 1973 121(2015), 3 vom: 12. Sept., Seite 1125-1131 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:121 year:2015 number:3 day:12 month:09 pages:1125-1131 https://dx.doi.org/10.1007/s00339-015-9470-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 121 2015 3 12 09 1125-1131
allfieldsSound	10.1007/s00339-015-9470-z doi (DE-627)SPR004154746 (SPR)s00339-015-9470-z-e DE-627 ger DE-627 rakwb eng Hu, Yifeng verfasserin aut Superlattice-like $ SnSb_{4} $/$ Ga_{3} %$ Sb_{7} $ thin films for ultrafast switching phase-change memory application 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2015 Abstract The carrier concentration of Sb-rich phase $ SnSb_{4} $, $ Ga_{3} %$ Sb_{7} $ and superlattice-like [$ SnSb_{4} $(3.5 nm)/$ Ga_{3} %$ Sb_{7} $(4 nm)]7 (SLL-7) thin films as a function of annealing temperature was investigated to explain the reason of resistance change. The activation energy for crystallization was calculated with a Kissinger equation to estimate the thermal stability. In order to illuminate the transition mechanisms, the crystallization kinetics of SLL-7 were explored by using Johnson–Mehl–Avrami theory. The obtained values of Avrami indexes indicate that a one-dimensional growth-dominated mechanism is responsible for the set transition of SLL-7 thin film. X-ray diffractometer and Raman scattering spectra were recorded to investigate the change of crystalline structure. The measurement of atomic force microscopy indicated that SLL-7 thin film has a good smooth surface. A picosecond laser pump-probe system was used to test and verify phase-change speed of the SLL-7 thin film. Kissinger Equation (dpeaa)DE-He213 Raman Scatter Spectrum (dpeaa)DE-He213 Avrami Index (dpeaa)DE-He213 Neodymium Yttrium (dpeaa)DE-He213 Film Surface Roughness (dpeaa)DE-He213 He, Zifang aut Zhai, Jiwei aut Wu, Pengzhi aut Lai, Tianshu aut Song, Sannian aut Song, Zhitang aut Enthalten in Applied physics Berlin : Springer, 1973 121(2015), 3 vom: 12. Sept., Seite 1125-1131 (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:121 year:2015 number:3 day:12 month:09 pages:1125-1131 https://dx.doi.org/10.1007/s00339-015-9470-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 121 2015 3 12 09 1125-1131
language	English
source	Enthalten in Applied physics 121(2015), 3 vom: 12. Sept., Seite 1125-1131 volume:121 year:2015 number:3 day:12 month:09 pages:1125-1131
sourceStr	Enthalten in Applied physics 121(2015), 3 vom: 12. Sept., Seite 1125-1131 volume:121 year:2015 number:3 day:12 month:09 pages:1125-1131
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Kissinger Equation Raman Scatter Spectrum Avrami Index Neodymium Yttrium Film Surface Roughness
isfreeaccess_bool	false
container_title	Applied physics
authorswithroles_txt_mv	Hu, Yifeng @@aut@@ He, Zifang @@aut@@ Zhai, Jiwei @@aut@@ Wu, Pengzhi @@aut@@ Lai, Tianshu @@aut@@ Song, Sannian @@aut@@ Song, Zhitang @@aut@@
publishDateDaySort_date	2015-09-12T00:00:00Z
hierarchy_top_id	235503231
id	SPR004154746
language_de	englisch
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author	Hu, Yifeng
spellingShingle	Hu, Yifeng misc Kissinger Equation misc Raman Scatter Spectrum misc Avrami Index misc Neodymium Yttrium misc Film Surface Roughness Superlattice-like $ SnSb_{4} $/$ Ga_{3} %$ Sb_{7} $ thin films for ultrafast switching phase-change memory application
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topic_title	Superlattice-like $ SnSb_{4} $/$ Ga_{3} %$ Sb_{7} $ thin films for ultrafast switching phase-change memory application Kissinger Equation (dpeaa)DE-He213 Raman Scatter Spectrum (dpeaa)DE-He213 Avrami Index (dpeaa)DE-He213 Neodymium Yttrium (dpeaa)DE-He213 Film Surface Roughness (dpeaa)DE-He213
topic	misc Kissinger Equation misc Raman Scatter Spectrum misc Avrami Index misc Neodymium Yttrium misc Film Surface Roughness
topic_unstemmed	misc Kissinger Equation misc Raman Scatter Spectrum misc Avrami Index misc Neodymium Yttrium misc Film Surface Roughness
topic_browse	misc Kissinger Equation misc Raman Scatter Spectrum misc Avrami Index misc Neodymium Yttrium misc Film Surface Roughness
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title	Superlattice-like $ SnSb_{4} $/$ Ga_{3} %$ Sb_{7} $ thin films for ultrafast switching phase-change memory application
ctrlnum	(DE-627)SPR004154746 (SPR)s00339-015-9470-z-e
title_full	Superlattice-like $ SnSb_{4} $/$ Ga_{3} %$ Sb_{7} $ thin films for ultrafast switching phase-change memory application
author_sort	Hu, Yifeng
journal	Applied physics
journalStr	Applied physics
lang_code	eng
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container_start_page	1125
author_browse	Hu, Yifeng He, Zifang Zhai, Jiwei Wu, Pengzhi Lai, Tianshu Song, Sannian Song, Zhitang
container_volume	121
format_se	Elektronische Aufsätze
author-letter	Hu, Yifeng
doi_str_mv	10.1007/s00339-015-9470-z
title_sort	superlattice-like $ snsb_{4} $/$ ga_{3} %$ sb_{7} $ thin films for ultrafast switching phase-change memory application
title_auth	Superlattice-like $ SnSb_{4} $/$ Ga_{3} %$ Sb_{7} $ thin films for ultrafast switching phase-change memory application
abstract	Abstract The carrier concentration of Sb-rich phase $ SnSb_{4} $, $ Ga_{3} %$ Sb_{7} $ and superlattice-like [$ SnSb_{4} $(3.5 nm)/$ Ga_{3} %$ Sb_{7} $(4 nm)]7 (SLL-7) thin films as a function of annealing temperature was investigated to explain the reason of resistance change. The activation energy for crystallization was calculated with a Kissinger equation to estimate the thermal stability. In order to illuminate the transition mechanisms, the crystallization kinetics of SLL-7 were explored by using Johnson–Mehl–Avrami theory. The obtained values of Avrami indexes indicate that a one-dimensional growth-dominated mechanism is responsible for the set transition of SLL-7 thin film. X-ray diffractometer and Raman scattering spectra were recorded to investigate the change of crystalline structure. The measurement of atomic force microscopy indicated that SLL-7 thin film has a good smooth surface. A picosecond laser pump-probe system was used to test and verify phase-change speed of the SLL-7 thin film. © Springer-Verlag Berlin Heidelberg 2015
abstractGer	Abstract The carrier concentration of Sb-rich phase $ SnSb_{4} $, $ Ga_{3} %$ Sb_{7} $ and superlattice-like [$ SnSb_{4} $(3.5 nm)/$ Ga_{3} %$ Sb_{7} $(4 nm)]7 (SLL-7) thin films as a function of annealing temperature was investigated to explain the reason of resistance change. The activation energy for crystallization was calculated with a Kissinger equation to estimate the thermal stability. In order to illuminate the transition mechanisms, the crystallization kinetics of SLL-7 were explored by using Johnson–Mehl–Avrami theory. The obtained values of Avrami indexes indicate that a one-dimensional growth-dominated mechanism is responsible for the set transition of SLL-7 thin film. X-ray diffractometer and Raman scattering spectra were recorded to investigate the change of crystalline structure. The measurement of atomic force microscopy indicated that SLL-7 thin film has a good smooth surface. A picosecond laser pump-probe system was used to test and verify phase-change speed of the SLL-7 thin film. © Springer-Verlag Berlin Heidelberg 2015
abstract_unstemmed	Abstract The carrier concentration of Sb-rich phase $ SnSb_{4} $, $ Ga_{3} %$ Sb_{7} $ and superlattice-like [$ SnSb_{4} $(3.5 nm)/$ Ga_{3} %$ Sb_{7} $(4 nm)]7 (SLL-7) thin films as a function of annealing temperature was investigated to explain the reason of resistance change. The activation energy for crystallization was calculated with a Kissinger equation to estimate the thermal stability. In order to illuminate the transition mechanisms, the crystallization kinetics of SLL-7 were explored by using Johnson–Mehl–Avrami theory. The obtained values of Avrami indexes indicate that a one-dimensional growth-dominated mechanism is responsible for the set transition of SLL-7 thin film. X-ray diffractometer and Raman scattering spectra were recorded to investigate the change of crystalline structure. The measurement of atomic force microscopy indicated that SLL-7 thin film has a good smooth surface. A picosecond laser pump-probe system was used to test and verify phase-change speed of the SLL-7 thin film. © Springer-Verlag Berlin Heidelberg 2015
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title_short	Superlattice-like $ SnSb_{4} $/$ Ga_{3} %$ Sb_{7} $ thin films for ultrafast switching phase-change memory application
url	https://dx.doi.org/10.1007/s00339-015-9470-z
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author2	He, Zifang Zhai, Jiwei Wu, Pengzhi Lai, Tianshu Song, Sannian Song, Zhitang
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doi_str	10.1007/s00339-015-9470-z
up_date	2024-07-03T23:52:59.755Z
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The activation energy for crystallization was calculated with a Kissinger equation to estimate the thermal stability. In order to illuminate the transition mechanisms, the crystallization kinetics of SLL-7 were explored by using Johnson–Mehl–Avrami theory. The obtained values of Avrami indexes indicate that a one-dimensional growth-dominated mechanism is responsible for the set transition of SLL-7 thin film. X-ray diffractometer and Raman scattering spectra were recorded to investigate the change of crystalline structure. The measurement of atomic force microscopy indicated that SLL-7 thin film has a good smooth surface. 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Superlattice-like $ SnSb_{4} $/$ Ga_{3} %$ Sb_{7} $ thin films for ultrafast switching phase-change memory application

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