Pulsed laser-deposited nanocrystalline $ GdB_{6} $ thin films on W and Re as field emitters

Abstract Gadolinium hexaboride ($ GdB_{6} $) nanocrystalline thin films were grown on tungsten (W), rhenium (Re) tips and foil substrates using optimized pulsed laser deposition (PLD) technique. The X-ray diffraction analysis reveals formation of pure, crystalline cubic phase of $ GdB_{6} $ on W and...
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Autor*in:	Suryawanshi, Sachin R. [verfasserIn] Singh, Anil K. Phase, Deodatta M. Late, Dattatray J. Sinha, Sucharita More, Mahendra A.

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2016

Schlagwörter:	Pulse Laser Deposition Flat Substrate Threshold Field Current Stability Emission Current Density

Anmerkung:	© Springer-Verlag Berlin Heidelberg 2016

Übergeordnetes Werk:	Enthalten in: Applied physics - Berlin : Springer, 1973, 122(2016), 10 vom: 17. Sept.
Übergeordnetes Werk:	volume:122 ; year:2016 ; number:10 ; day:17 ; month:09

Links:	Volltext

DOI / URN:	10.1007/s00339-016-0423-y

Katalog-ID:	SPR00415603X

Internformat


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520			\|a Abstract Gadolinium hexaboride ($ GdB_{6} $) nanocrystalline thin films were grown on tungsten (W), rhenium (Re) tips and foil substrates using optimized pulsed laser deposition (PLD) technique. The X-ray diffraction analysis reveals formation of pure, crystalline cubic phase of $ GdB_{6} $ on W and Re substrates, under the prevailing PLD conditions. The field emission (FE) studies of $ GdB_{6} $/W and $ GdB_{6} $/Re emitters were performed in a planar diode configuration at the base pressure ~$ 10^{−8} $ mbar. The $ GdB_{6} $/W and $ GdB_{6} $/Re tip emitters deliver high emission current densities of ~1.4 and 0.811 mA/$ cm^{2} $ at an applied field of ~6.0 and 7.0 V/µm, respectively. The Fowler–Nordheim (F–N) plots were found to be nearly linear showing metallic nature of the emitters. The noticeably high values of field enhancement factor (β) estimated using the slopes of the F–N plots indicate that the PLD $ GdB_{6} $ coating on W and Re substrates comprises of high-aspect-ratio nanostructures. Interestingly, the $ GdB_{6} $/W and $ GdB_{6} $/Re planar emitters exhibit excellent current stability at the preset values over a long-term operation, as compared to the tip emitters. Furthermore, the values of workfunction of the $ GdB_{6} $/W and GdB6/Re emitters, experimentally measured using ultraviolet photoelectron spectroscopy, are found to be same, ~1.6 ± 0.1 eV. Despite possessing same workfunction value, the FE characteristics of the $ GdB_{6} $/W emitter are markedly different from that of $ GdB_{6} $/Re emitter, which can be attributed to the growth of $ GdB_{6} $ films on W and Re substrates.
650		4	\|a Pulse Laser Deposition \|7 (dpeaa)DE-He213
650		4	\|a Flat Substrate \|7 (dpeaa)DE-He213
650		4	\|a Threshold Field \|7 (dpeaa)DE-He213
650		4	\|a Current Stability \|7 (dpeaa)DE-He213
650		4	\|a Emission Current Density \|7 (dpeaa)DE-He213
700	1		\|a Singh, Anil K. \|4 aut
700	1		\|a Phase, Deodatta M. \|4 aut
700	1		\|a Late, Dattatray J. \|4 aut
700	1		\|a Sinha, Sucharita \|4 aut
700	1		\|a More, Mahendra A. \|4 aut
773	0	8	\|i Enthalten in \|t Applied physics \|d Berlin : Springer, 1973 \|g 122(2016), 10 vom: 17. Sept. \|w (DE-627)235503231 \|w (DE-600)1398311-8 \|x 1432-0630 \|7 nnns
773	1	8	\|g volume:122 \|g year:2016 \|g number:10 \|g day:17 \|g month:09
856	4	0	\|u https://dx.doi.org/10.1007/s00339-016-0423-y \|z lizenzpflichtig \|3 Volltext
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912			\|a GBV_ILN_24
912			\|a GBV_ILN_31
912			\|a GBV_ILN_32
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
912			\|a GBV_ILN_100
912			\|a GBV_ILN_101
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_120
912			\|a GBV_ILN_138
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_206
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_250
912			\|a GBV_ILN_267
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2031
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2039
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2056
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2070
912			\|a GBV_ILN_2086
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2107
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2116
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2119
912			\|a GBV_ILN_2122
912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
912			\|a GBV_ILN_2144
912			\|a GBV_ILN_2147
912			\|a GBV_ILN_2148
912			\|a GBV_ILN_2152
912			\|a GBV_ILN_2153
912			\|a GBV_ILN_2188
912			\|a GBV_ILN_2190
912			\|a GBV_ILN_2232
912			\|a GBV_ILN_2336
912			\|a GBV_ILN_2446
912			\|a GBV_ILN_2470
912			\|a GBV_ILN_2472
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_2522
912			\|a GBV_ILN_2548
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4046
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4242
912			\|a GBV_ILN_4246
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4251
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4326
912			\|a GBV_ILN_4328
912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4334
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4336
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4393
912			\|a GBV_ILN_4700
951			\|a AR
952			\|d 122 \|j 2016 \|e 10 \|b 17 \|c 09

Indexfelder

author_variant	s r s sr srs a k s ak aks d m p dm dmp d j l dj djl s s ss m a m ma mam
matchkey_str	article:14320630:2016----::usdaedpstdaorsalngb6hnimown
hierarchy_sort_str	2016
publishDate	2016
allfields	10.1007/s00339-016-0423-y doi (DE-627)SPR00415603X (SPR)s00339-016-0423-y-e DE-627 ger DE-627 rakwb eng Suryawanshi, Sachin R. verfasserin aut Pulsed laser-deposited nanocrystalline $ GdB_{6} $ thin films on W and Re as field emitters 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2016 Abstract Gadolinium hexaboride ($ GdB_{6} $) nanocrystalline thin films were grown on tungsten (W), rhenium (Re) tips and foil substrates using optimized pulsed laser deposition (PLD) technique. The X-ray diffraction analysis reveals formation of pure, crystalline cubic phase of $ GdB_{6} $ on W and Re substrates, under the prevailing PLD conditions. The field emission (FE) studies of $ GdB_{6} $/W and $ GdB_{6} $/Re emitters were performed in a planar diode configuration at the base pressure ~$ 10^{−8} $ mbar. The $ GdB_{6} $/W and $ GdB_{6} $/Re tip emitters deliver high emission current densities of ~1.4 and 0.811 mA/$ cm^{2} $ at an applied field of ~6.0 and 7.0 V/µm, respectively. The Fowler–Nordheim (F–N) plots were found to be nearly linear showing metallic nature of the emitters. The noticeably high values of field enhancement factor (β) estimated using the slopes of the F–N plots indicate that the PLD $ GdB_{6} $ coating on W and Re substrates comprises of high-aspect-ratio nanostructures. Interestingly, the $ GdB_{6} $/W and $ GdB_{6} $/Re planar emitters exhibit excellent current stability at the preset values over a long-term operation, as compared to the tip emitters. Furthermore, the values of workfunction of the $ GdB_{6} $/W and GdB6/Re emitters, experimentally measured using ultraviolet photoelectron spectroscopy, are found to be same, ~1.6 ± 0.1 eV. Despite possessing same workfunction value, the FE characteristics of the $ GdB_{6} $/W emitter are markedly different from that of $ GdB_{6} $/Re emitter, which can be attributed to the growth of $ GdB_{6} $ films on W and Re substrates. Pulse Laser Deposition (dpeaa)DE-He213 Flat Substrate (dpeaa)DE-He213 Threshold Field (dpeaa)DE-He213 Current Stability (dpeaa)DE-He213 Emission Current Density (dpeaa)DE-He213 Singh, Anil K. aut Phase, Deodatta M. aut Late, Dattatray J. aut Sinha, Sucharita aut More, Mahendra A. aut Enthalten in Applied physics Berlin : Springer, 1973 122(2016), 10 vom: 17. Sept. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:122 year:2016 number:10 day:17 month:09 https://dx.doi.org/10.1007/s00339-016-0423-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2016 10 17 09
spelling	10.1007/s00339-016-0423-y doi (DE-627)SPR00415603X (SPR)s00339-016-0423-y-e DE-627 ger DE-627 rakwb eng Suryawanshi, Sachin R. verfasserin aut Pulsed laser-deposited nanocrystalline $ GdB_{6} $ thin films on W and Re as field emitters 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2016 Abstract Gadolinium hexaboride ($ GdB_{6} $) nanocrystalline thin films were grown on tungsten (W), rhenium (Re) tips and foil substrates using optimized pulsed laser deposition (PLD) technique. The X-ray diffraction analysis reveals formation of pure, crystalline cubic phase of $ GdB_{6} $ on W and Re substrates, under the prevailing PLD conditions. The field emission (FE) studies of $ GdB_{6} $/W and $ GdB_{6} $/Re emitters were performed in a planar diode configuration at the base pressure ~$ 10^{−8} $ mbar. The $ GdB_{6} $/W and $ GdB_{6} $/Re tip emitters deliver high emission current densities of ~1.4 and 0.811 mA/$ cm^{2} $ at an applied field of ~6.0 and 7.0 V/µm, respectively. The Fowler–Nordheim (F–N) plots were found to be nearly linear showing metallic nature of the emitters. The noticeably high values of field enhancement factor (β) estimated using the slopes of the F–N plots indicate that the PLD $ GdB_{6} $ coating on W and Re substrates comprises of high-aspect-ratio nanostructures. Interestingly, the $ GdB_{6} $/W and $ GdB_{6} $/Re planar emitters exhibit excellent current stability at the preset values over a long-term operation, as compared to the tip emitters. Furthermore, the values of workfunction of the $ GdB_{6} $/W and GdB6/Re emitters, experimentally measured using ultraviolet photoelectron spectroscopy, are found to be same, ~1.6 ± 0.1 eV. Despite possessing same workfunction value, the FE characteristics of the $ GdB_{6} $/W emitter are markedly different from that of $ GdB_{6} $/Re emitter, which can be attributed to the growth of $ GdB_{6} $ films on W and Re substrates. Pulse Laser Deposition (dpeaa)DE-He213 Flat Substrate (dpeaa)DE-He213 Threshold Field (dpeaa)DE-He213 Current Stability (dpeaa)DE-He213 Emission Current Density (dpeaa)DE-He213 Singh, Anil K. aut Phase, Deodatta M. aut Late, Dattatray J. aut Sinha, Sucharita aut More, Mahendra A. aut Enthalten in Applied physics Berlin : Springer, 1973 122(2016), 10 vom: 17. Sept. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:122 year:2016 number:10 day:17 month:09 https://dx.doi.org/10.1007/s00339-016-0423-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2016 10 17 09
allfields_unstemmed	10.1007/s00339-016-0423-y doi (DE-627)SPR00415603X (SPR)s00339-016-0423-y-e DE-627 ger DE-627 rakwb eng Suryawanshi, Sachin R. verfasserin aut Pulsed laser-deposited nanocrystalline $ GdB_{6} $ thin films on W and Re as field emitters 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2016 Abstract Gadolinium hexaboride ($ GdB_{6} $) nanocrystalline thin films were grown on tungsten (W), rhenium (Re) tips and foil substrates using optimized pulsed laser deposition (PLD) technique. The X-ray diffraction analysis reveals formation of pure, crystalline cubic phase of $ GdB_{6} $ on W and Re substrates, under the prevailing PLD conditions. The field emission (FE) studies of $ GdB_{6} $/W and $ GdB_{6} $/Re emitters were performed in a planar diode configuration at the base pressure ~$ 10^{−8} $ mbar. The $ GdB_{6} $/W and $ GdB_{6} $/Re tip emitters deliver high emission current densities of ~1.4 and 0.811 mA/$ cm^{2} $ at an applied field of ~6.0 and 7.0 V/µm, respectively. The Fowler–Nordheim (F–N) plots were found to be nearly linear showing metallic nature of the emitters. The noticeably high values of field enhancement factor (β) estimated using the slopes of the F–N plots indicate that the PLD $ GdB_{6} $ coating on W and Re substrates comprises of high-aspect-ratio nanostructures. Interestingly, the $ GdB_{6} $/W and $ GdB_{6} $/Re planar emitters exhibit excellent current stability at the preset values over a long-term operation, as compared to the tip emitters. Furthermore, the values of workfunction of the $ GdB_{6} $/W and GdB6/Re emitters, experimentally measured using ultraviolet photoelectron spectroscopy, are found to be same, ~1.6 ± 0.1 eV. Despite possessing same workfunction value, the FE characteristics of the $ GdB_{6} $/W emitter are markedly different from that of $ GdB_{6} $/Re emitter, which can be attributed to the growth of $ GdB_{6} $ films on W and Re substrates. Pulse Laser Deposition (dpeaa)DE-He213 Flat Substrate (dpeaa)DE-He213 Threshold Field (dpeaa)DE-He213 Current Stability (dpeaa)DE-He213 Emission Current Density (dpeaa)DE-He213 Singh, Anil K. aut Phase, Deodatta M. aut Late, Dattatray J. aut Sinha, Sucharita aut More, Mahendra A. aut Enthalten in Applied physics Berlin : Springer, 1973 122(2016), 10 vom: 17. Sept. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:122 year:2016 number:10 day:17 month:09 https://dx.doi.org/10.1007/s00339-016-0423-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2016 10 17 09
allfieldsGer	10.1007/s00339-016-0423-y doi (DE-627)SPR00415603X (SPR)s00339-016-0423-y-e DE-627 ger DE-627 rakwb eng Suryawanshi, Sachin R. verfasserin aut Pulsed laser-deposited nanocrystalline $ GdB_{6} $ thin films on W and Re as field emitters 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2016 Abstract Gadolinium hexaboride ($ GdB_{6} $) nanocrystalline thin films were grown on tungsten (W), rhenium (Re) tips and foil substrates using optimized pulsed laser deposition (PLD) technique. The X-ray diffraction analysis reveals formation of pure, crystalline cubic phase of $ GdB_{6} $ on W and Re substrates, under the prevailing PLD conditions. The field emission (FE) studies of $ GdB_{6} $/W and $ GdB_{6} $/Re emitters were performed in a planar diode configuration at the base pressure ~$ 10^{−8} $ mbar. The $ GdB_{6} $/W and $ GdB_{6} $/Re tip emitters deliver high emission current densities of ~1.4 and 0.811 mA/$ cm^{2} $ at an applied field of ~6.0 and 7.0 V/µm, respectively. The Fowler–Nordheim (F–N) plots were found to be nearly linear showing metallic nature of the emitters. The noticeably high values of field enhancement factor (β) estimated using the slopes of the F–N plots indicate that the PLD $ GdB_{6} $ coating on W and Re substrates comprises of high-aspect-ratio nanostructures. Interestingly, the $ GdB_{6} $/W and $ GdB_{6} $/Re planar emitters exhibit excellent current stability at the preset values over a long-term operation, as compared to the tip emitters. Furthermore, the values of workfunction of the $ GdB_{6} $/W and GdB6/Re emitters, experimentally measured using ultraviolet photoelectron spectroscopy, are found to be same, ~1.6 ± 0.1 eV. Despite possessing same workfunction value, the FE characteristics of the $ GdB_{6} $/W emitter are markedly different from that of $ GdB_{6} $/Re emitter, which can be attributed to the growth of $ GdB_{6} $ films on W and Re substrates. Pulse Laser Deposition (dpeaa)DE-He213 Flat Substrate (dpeaa)DE-He213 Threshold Field (dpeaa)DE-He213 Current Stability (dpeaa)DE-He213 Emission Current Density (dpeaa)DE-He213 Singh, Anil K. aut Phase, Deodatta M. aut Late, Dattatray J. aut Sinha, Sucharita aut More, Mahendra A. aut Enthalten in Applied physics Berlin : Springer, 1973 122(2016), 10 vom: 17. Sept. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:122 year:2016 number:10 day:17 month:09 https://dx.doi.org/10.1007/s00339-016-0423-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2016 10 17 09
allfieldsSound	10.1007/s00339-016-0423-y doi (DE-627)SPR00415603X (SPR)s00339-016-0423-y-e DE-627 ger DE-627 rakwb eng Suryawanshi, Sachin R. verfasserin aut Pulsed laser-deposited nanocrystalline $ GdB_{6} $ thin films on W and Re as field emitters 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2016 Abstract Gadolinium hexaboride ($ GdB_{6} $) nanocrystalline thin films were grown on tungsten (W), rhenium (Re) tips and foil substrates using optimized pulsed laser deposition (PLD) technique. The X-ray diffraction analysis reveals formation of pure, crystalline cubic phase of $ GdB_{6} $ on W and Re substrates, under the prevailing PLD conditions. The field emission (FE) studies of $ GdB_{6} $/W and $ GdB_{6} $/Re emitters were performed in a planar diode configuration at the base pressure ~$ 10^{−8} $ mbar. The $ GdB_{6} $/W and $ GdB_{6} $/Re tip emitters deliver high emission current densities of ~1.4 and 0.811 mA/$ cm^{2} $ at an applied field of ~6.0 and 7.0 V/µm, respectively. The Fowler–Nordheim (F–N) plots were found to be nearly linear showing metallic nature of the emitters. The noticeably high values of field enhancement factor (β) estimated using the slopes of the F–N plots indicate that the PLD $ GdB_{6} $ coating on W and Re substrates comprises of high-aspect-ratio nanostructures. Interestingly, the $ GdB_{6} $/W and $ GdB_{6} $/Re planar emitters exhibit excellent current stability at the preset values over a long-term operation, as compared to the tip emitters. Furthermore, the values of workfunction of the $ GdB_{6} $/W and GdB6/Re emitters, experimentally measured using ultraviolet photoelectron spectroscopy, are found to be same, ~1.6 ± 0.1 eV. Despite possessing same workfunction value, the FE characteristics of the $ GdB_{6} $/W emitter are markedly different from that of $ GdB_{6} $/Re emitter, which can be attributed to the growth of $ GdB_{6} $ films on W and Re substrates. Pulse Laser Deposition (dpeaa)DE-He213 Flat Substrate (dpeaa)DE-He213 Threshold Field (dpeaa)DE-He213 Current Stability (dpeaa)DE-He213 Emission Current Density (dpeaa)DE-He213 Singh, Anil K. aut Phase, Deodatta M. aut Late, Dattatray J. aut Sinha, Sucharita aut More, Mahendra A. aut Enthalten in Applied physics Berlin : Springer, 1973 122(2016), 10 vom: 17. Sept. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:122 year:2016 number:10 day:17 month:09 https://dx.doi.org/10.1007/s00339-016-0423-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2016 10 17 09
language	English
source	Enthalten in Applied physics 122(2016), 10 vom: 17. Sept. volume:122 year:2016 number:10 day:17 month:09
sourceStr	Enthalten in Applied physics 122(2016), 10 vom: 17. Sept. volume:122 year:2016 number:10 day:17 month:09
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Pulse Laser Deposition Flat Substrate Threshold Field Current Stability Emission Current Density
isfreeaccess_bool	false
container_title	Applied physics
authorswithroles_txt_mv	Suryawanshi, Sachin R. @@aut@@ Singh, Anil K. @@aut@@ Phase, Deodatta M. @@aut@@ Late, Dattatray J. @@aut@@ Sinha, Sucharita @@aut@@ More, Mahendra A. @@aut@@
publishDateDaySort_date	2016-09-17T00:00:00Z
hierarchy_top_id	235503231
id	SPR00415603X
language_de	englisch
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The X-ray diffraction analysis reveals formation of pure, crystalline cubic phase of $ GdB_{6} $ on W and Re substrates, under the prevailing PLD conditions. The field emission (FE) studies of $ GdB_{6} $/W and $ GdB_{6} $/Re emitters were performed in a planar diode configuration at the base pressure ~$ 10^{−8} $ mbar. The $ GdB_{6} $/W and $ GdB_{6} $/Re tip emitters deliver high emission current densities of ~1.4 and 0.811 mA/$ cm^{2} $ at an applied field of ~6.0 and 7.0 V/µm, respectively. The Fowler–Nordheim (F–N) plots were found to be nearly linear showing metallic nature of the emitters. The noticeably high values of field enhancement factor (β) estimated using the slopes of the F–N plots indicate that the PLD $ GdB_{6} $ coating on W and Re substrates comprises of high-aspect-ratio nanostructures. 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author	Suryawanshi, Sachin R.
spellingShingle	Suryawanshi, Sachin R. misc Pulse Laser Deposition misc Flat Substrate misc Threshold Field misc Current Stability misc Emission Current Density Pulsed laser-deposited nanocrystalline $ GdB_{6} $ thin films on W and Re as field emitters
authorStr	Suryawanshi, Sachin R.
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topic_title	Pulsed laser-deposited nanocrystalline $ GdB_{6} $ thin films on W and Re as field emitters Pulse Laser Deposition (dpeaa)DE-He213 Flat Substrate (dpeaa)DE-He213 Threshold Field (dpeaa)DE-He213 Current Stability (dpeaa)DE-He213 Emission Current Density (dpeaa)DE-He213
topic	misc Pulse Laser Deposition misc Flat Substrate misc Threshold Field misc Current Stability misc Emission Current Density
topic_unstemmed	misc Pulse Laser Deposition misc Flat Substrate misc Threshold Field misc Current Stability misc Emission Current Density
topic_browse	misc Pulse Laser Deposition misc Flat Substrate misc Threshold Field misc Current Stability misc Emission Current Density
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
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title	Pulsed laser-deposited nanocrystalline $ GdB_{6} $ thin films on W and Re as field emitters
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title_full	Pulsed laser-deposited nanocrystalline $ GdB_{6} $ thin films on W and Re as field emitters
author_sort	Suryawanshi, Sachin R.
journal	Applied physics
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author_browse	Suryawanshi, Sachin R. Singh, Anil K. Phase, Deodatta M. Late, Dattatray J. Sinha, Sucharita More, Mahendra A.
container_volume	122
format_se	Elektronische Aufsätze
author-letter	Suryawanshi, Sachin R.
doi_str_mv	10.1007/s00339-016-0423-y
title_sort	pulsed laser-deposited nanocrystalline $ gdb_{6} $ thin films on w and re as field emitters
title_auth	Pulsed laser-deposited nanocrystalline $ GdB_{6} $ thin films on W and Re as field emitters
abstract	Abstract Gadolinium hexaboride ($ GdB_{6} $) nanocrystalline thin films were grown on tungsten (W), rhenium (Re) tips and foil substrates using optimized pulsed laser deposition (PLD) technique. The X-ray diffraction analysis reveals formation of pure, crystalline cubic phase of $ GdB_{6} $ on W and Re substrates, under the prevailing PLD conditions. The field emission (FE) studies of $ GdB_{6} $/W and $ GdB_{6} $/Re emitters were performed in a planar diode configuration at the base pressure ~$ 10^{−8} $ mbar. The $ GdB_{6} $/W and $ GdB_{6} $/Re tip emitters deliver high emission current densities of ~1.4 and 0.811 mA/$ cm^{2} $ at an applied field of ~6.0 and 7.0 V/µm, respectively. The Fowler–Nordheim (F–N) plots were found to be nearly linear showing metallic nature of the emitters. The noticeably high values of field enhancement factor (β) estimated using the slopes of the F–N plots indicate that the PLD $ GdB_{6} $ coating on W and Re substrates comprises of high-aspect-ratio nanostructures. Interestingly, the $ GdB_{6} $/W and $ GdB_{6} $/Re planar emitters exhibit excellent current stability at the preset values over a long-term operation, as compared to the tip emitters. Furthermore, the values of workfunction of the $ GdB_{6} $/W and GdB6/Re emitters, experimentally measured using ultraviolet photoelectron spectroscopy, are found to be same, ~1.6 ± 0.1 eV. Despite possessing same workfunction value, the FE characteristics of the $ GdB_{6} $/W emitter are markedly different from that of $ GdB_{6} $/Re emitter, which can be attributed to the growth of $ GdB_{6} $ films on W and Re substrates. © Springer-Verlag Berlin Heidelberg 2016
abstractGer	Abstract Gadolinium hexaboride ($ GdB_{6} $) nanocrystalline thin films were grown on tungsten (W), rhenium (Re) tips and foil substrates using optimized pulsed laser deposition (PLD) technique. The X-ray diffraction analysis reveals formation of pure, crystalline cubic phase of $ GdB_{6} $ on W and Re substrates, under the prevailing PLD conditions. The field emission (FE) studies of $ GdB_{6} $/W and $ GdB_{6} $/Re emitters were performed in a planar diode configuration at the base pressure ~$ 10^{−8} $ mbar. The $ GdB_{6} $/W and $ GdB_{6} $/Re tip emitters deliver high emission current densities of ~1.4 and 0.811 mA/$ cm^{2} $ at an applied field of ~6.0 and 7.0 V/µm, respectively. The Fowler–Nordheim (F–N) plots were found to be nearly linear showing metallic nature of the emitters. The noticeably high values of field enhancement factor (β) estimated using the slopes of the F–N plots indicate that the PLD $ GdB_{6} $ coating on W and Re substrates comprises of high-aspect-ratio nanostructures. Interestingly, the $ GdB_{6} $/W and $ GdB_{6} $/Re planar emitters exhibit excellent current stability at the preset values over a long-term operation, as compared to the tip emitters. Furthermore, the values of workfunction of the $ GdB_{6} $/W and GdB6/Re emitters, experimentally measured using ultraviolet photoelectron spectroscopy, are found to be same, ~1.6 ± 0.1 eV. Despite possessing same workfunction value, the FE characteristics of the $ GdB_{6} $/W emitter are markedly different from that of $ GdB_{6} $/Re emitter, which can be attributed to the growth of $ GdB_{6} $ films on W and Re substrates. © Springer-Verlag Berlin Heidelberg 2016
abstract_unstemmed	Abstract Gadolinium hexaboride ($ GdB_{6} $) nanocrystalline thin films were grown on tungsten (W), rhenium (Re) tips and foil substrates using optimized pulsed laser deposition (PLD) technique. The X-ray diffraction analysis reveals formation of pure, crystalline cubic phase of $ GdB_{6} $ on W and Re substrates, under the prevailing PLD conditions. The field emission (FE) studies of $ GdB_{6} $/W and $ GdB_{6} $/Re emitters were performed in a planar diode configuration at the base pressure ~$ 10^{−8} $ mbar. The $ GdB_{6} $/W and $ GdB_{6} $/Re tip emitters deliver high emission current densities of ~1.4 and 0.811 mA/$ cm^{2} $ at an applied field of ~6.0 and 7.0 V/µm, respectively. The Fowler–Nordheim (F–N) plots were found to be nearly linear showing metallic nature of the emitters. The noticeably high values of field enhancement factor (β) estimated using the slopes of the F–N plots indicate that the PLD $ GdB_{6} $ coating on W and Re substrates comprises of high-aspect-ratio nanostructures. Interestingly, the $ GdB_{6} $/W and $ GdB_{6} $/Re planar emitters exhibit excellent current stability at the preset values over a long-term operation, as compared to the tip emitters. Furthermore, the values of workfunction of the $ GdB_{6} $/W and GdB6/Re emitters, experimentally measured using ultraviolet photoelectron spectroscopy, are found to be same, ~1.6 ± 0.1 eV. Despite possessing same workfunction value, the FE characteristics of the $ GdB_{6} $/W emitter are markedly different from that of $ GdB_{6} $/Re emitter, which can be attributed to the growth of $ GdB_{6} $ films on W and Re substrates. © Springer-Verlag Berlin Heidelberg 2016
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container_issue	10
title_short	Pulsed laser-deposited nanocrystalline $ GdB_{6} $ thin films on W and Re as field emitters
url	https://dx.doi.org/10.1007/s00339-016-0423-y
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author2	Singh, Anil K. Phase, Deodatta M. Late, Dattatray J. Sinha, Sucharita More, Mahendra A.
author2Str	Singh, Anil K. Phase, Deodatta M. Late, Dattatray J. Sinha, Sucharita More, Mahendra A.
ppnlink	235503231
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doi_str	10.1007/s00339-016-0423-y
up_date	2024-07-03T23:53:22.930Z
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Pulsed laser-deposited nanocrystalline $ GdB_{6} $ thin films on W and Re as field emitters

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