Large arrays of ultra-high aspect ratio periodic silicon nanowires obtained via top–down route
Abstract Metal-catalysed etching (MCE) is a simple and versatile method for fabrication of silicon nanowires, of high structural quality. When combined with laser interference lithography (LIL), large areas of periodic structures can be generated in only few steps. The aspect ratio of such periodic...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Svavarsson, Halldor Gudfinnur [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2016 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer-Verlag Berlin Heidelberg 2016 |
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| Übergeordnetes Werk: |
Enthalten in: Applied physics - Berlin : Springer, 1973, 122(2016), 2 vom: 11. Jan. |
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| Übergeordnetes Werk: |
volume:122 ; year:2016 ; number:2 ; day:11 ; month:01 |
| Links: |
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| DOI / URN: |
10.1007/s00339-015-9589-y |
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| Katalog-ID: |
SPR004158342 |
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| 100 | 1 | |a Svavarsson, Halldor Gudfinnur |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Large arrays of ultra-high aspect ratio periodic silicon nanowires obtained via top–down route |
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| 520 | |a Abstract Metal-catalysed etching (MCE) is a simple and versatile method for fabrication of silicon nanowires, of high structural quality. When combined with laser interference lithography (LIL), large areas of periodic structures can be generated in only few steps. The aspect ratio of such periodic structure is however commonly not higher than several decades or very few hundred. Here, a combined MCE and LIL techniques were applied to fabricate dense (4 × $ 10^{8} $ $ cm^{−3} $), periodic arrays of vertically aligned silicon nanowires with aspect ratio of up to $ 10^{3} $. This is a considerable higher number than previously reported on for periodic silicon wire arrays prepared with top–down approaches. The wires were slightly tapered, with top and bottom diameters ranging from 370 to 195 nm and length of up to 200 μm. A potential use of the nanowires as light absorber is demonstrated by measuring reflection in integrating sphere. An average total absorption of ~97 % was observed for 200-μm-long wires in the spectral range of 450–1000 nm. A comparison to simulated absorption spectra is given. | ||
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| 700 | 1 | |a Hallgrimsson, Birgir Hrafn |4 aut | |
| 700 | 1 | |a Niraula, Manoj |4 aut | |
| 700 | 1 | |a Lee, Kyu Jin |4 aut | |
| 700 | 1 | |a Magnusson, Robert |4 aut | |
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10.1007/s00339-015-9589-y doi (DE-627)SPR004158342 (SPR)s00339-015-9589-y-e DE-627 ger DE-627 rakwb eng Svavarsson, Halldor Gudfinnur verfasserin aut Large arrays of ultra-high aspect ratio periodic silicon nanowires obtained via top–down route 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2016 Abstract Metal-catalysed etching (MCE) is a simple and versatile method for fabrication of silicon nanowires, of high structural quality. When combined with laser interference lithography (LIL), large areas of periodic structures can be generated in only few steps. The aspect ratio of such periodic structure is however commonly not higher than several decades or very few hundred. Here, a combined MCE and LIL techniques were applied to fabricate dense (4 × $ 10^{8} $ $ cm^{−3} $), periodic arrays of vertically aligned silicon nanowires with aspect ratio of up to $ 10^{3} $. This is a considerable higher number than previously reported on for periodic silicon wire arrays prepared with top–down approaches. The wires were slightly tapered, with top and bottom diameters ranging from 370 to 195 nm and length of up to 200 μm. A potential use of the nanowires as light absorber is demonstrated by measuring reflection in integrating sphere. An average total absorption of ~97 % was observed for 200-μm-long wires in the spectral range of 450–1000 nm. A comparison to simulated absorption spectra is given. Transverse Magnetic (dpeaa)DE-He213 Transverse Electric (dpeaa)DE-He213 Silicon Nanowires (dpeaa)DE-He213 Wire Array (dpeaa)DE-He213 SiNWs Array (dpeaa)DE-He213 Hallgrimsson, Birgir Hrafn aut Niraula, Manoj aut Lee, Kyu Jin aut Magnusson, Robert aut Enthalten in Applied physics Berlin : Springer, 1973 122(2016), 2 vom: 11. Jan. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:122 year:2016 number:2 day:11 month:01 https://dx.doi.org/10.1007/s00339-015-9589-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2016 2 11 01 |
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10.1007/s00339-015-9589-y doi (DE-627)SPR004158342 (SPR)s00339-015-9589-y-e DE-627 ger DE-627 rakwb eng Svavarsson, Halldor Gudfinnur verfasserin aut Large arrays of ultra-high aspect ratio periodic silicon nanowires obtained via top–down route 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2016 Abstract Metal-catalysed etching (MCE) is a simple and versatile method for fabrication of silicon nanowires, of high structural quality. When combined with laser interference lithography (LIL), large areas of periodic structures can be generated in only few steps. The aspect ratio of such periodic structure is however commonly not higher than several decades or very few hundred. Here, a combined MCE and LIL techniques were applied to fabricate dense (4 × $ 10^{8} $ $ cm^{−3} $), periodic arrays of vertically aligned silicon nanowires with aspect ratio of up to $ 10^{3} $. This is a considerable higher number than previously reported on for periodic silicon wire arrays prepared with top–down approaches. The wires were slightly tapered, with top and bottom diameters ranging from 370 to 195 nm and length of up to 200 μm. A potential use of the nanowires as light absorber is demonstrated by measuring reflection in integrating sphere. An average total absorption of ~97 % was observed for 200-μm-long wires in the spectral range of 450–1000 nm. A comparison to simulated absorption spectra is given. Transverse Magnetic (dpeaa)DE-He213 Transverse Electric (dpeaa)DE-He213 Silicon Nanowires (dpeaa)DE-He213 Wire Array (dpeaa)DE-He213 SiNWs Array (dpeaa)DE-He213 Hallgrimsson, Birgir Hrafn aut Niraula, Manoj aut Lee, Kyu Jin aut Magnusson, Robert aut Enthalten in Applied physics Berlin : Springer, 1973 122(2016), 2 vom: 11. Jan. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:122 year:2016 number:2 day:11 month:01 https://dx.doi.org/10.1007/s00339-015-9589-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2016 2 11 01 |
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10.1007/s00339-015-9589-y doi (DE-627)SPR004158342 (SPR)s00339-015-9589-y-e DE-627 ger DE-627 rakwb eng Svavarsson, Halldor Gudfinnur verfasserin aut Large arrays of ultra-high aspect ratio periodic silicon nanowires obtained via top–down route 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2016 Abstract Metal-catalysed etching (MCE) is a simple and versatile method for fabrication of silicon nanowires, of high structural quality. When combined with laser interference lithography (LIL), large areas of periodic structures can be generated in only few steps. The aspect ratio of such periodic structure is however commonly not higher than several decades or very few hundred. Here, a combined MCE and LIL techniques were applied to fabricate dense (4 × $ 10^{8} $ $ cm^{−3} $), periodic arrays of vertically aligned silicon nanowires with aspect ratio of up to $ 10^{3} $. This is a considerable higher number than previously reported on for periodic silicon wire arrays prepared with top–down approaches. The wires were slightly tapered, with top and bottom diameters ranging from 370 to 195 nm and length of up to 200 μm. A potential use of the nanowires as light absorber is demonstrated by measuring reflection in integrating sphere. An average total absorption of ~97 % was observed for 200-μm-long wires in the spectral range of 450–1000 nm. A comparison to simulated absorption spectra is given. Transverse Magnetic (dpeaa)DE-He213 Transverse Electric (dpeaa)DE-He213 Silicon Nanowires (dpeaa)DE-He213 Wire Array (dpeaa)DE-He213 SiNWs Array (dpeaa)DE-He213 Hallgrimsson, Birgir Hrafn aut Niraula, Manoj aut Lee, Kyu Jin aut Magnusson, Robert aut Enthalten in Applied physics Berlin : Springer, 1973 122(2016), 2 vom: 11. Jan. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:122 year:2016 number:2 day:11 month:01 https://dx.doi.org/10.1007/s00339-015-9589-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2016 2 11 01 |
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10.1007/s00339-015-9589-y doi (DE-627)SPR004158342 (SPR)s00339-015-9589-y-e DE-627 ger DE-627 rakwb eng Svavarsson, Halldor Gudfinnur verfasserin aut Large arrays of ultra-high aspect ratio periodic silicon nanowires obtained via top–down route 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2016 Abstract Metal-catalysed etching (MCE) is a simple and versatile method for fabrication of silicon nanowires, of high structural quality. When combined with laser interference lithography (LIL), large areas of periodic structures can be generated in only few steps. The aspect ratio of such periodic structure is however commonly not higher than several decades or very few hundred. Here, a combined MCE and LIL techniques were applied to fabricate dense (4 × $ 10^{8} $ $ cm^{−3} $), periodic arrays of vertically aligned silicon nanowires with aspect ratio of up to $ 10^{3} $. This is a considerable higher number than previously reported on for periodic silicon wire arrays prepared with top–down approaches. The wires were slightly tapered, with top and bottom diameters ranging from 370 to 195 nm and length of up to 200 μm. A potential use of the nanowires as light absorber is demonstrated by measuring reflection in integrating sphere. An average total absorption of ~97 % was observed for 200-μm-long wires in the spectral range of 450–1000 nm. A comparison to simulated absorption spectra is given. Transverse Magnetic (dpeaa)DE-He213 Transverse Electric (dpeaa)DE-He213 Silicon Nanowires (dpeaa)DE-He213 Wire Array (dpeaa)DE-He213 SiNWs Array (dpeaa)DE-He213 Hallgrimsson, Birgir Hrafn aut Niraula, Manoj aut Lee, Kyu Jin aut Magnusson, Robert aut Enthalten in Applied physics Berlin : Springer, 1973 122(2016), 2 vom: 11. Jan. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:122 year:2016 number:2 day:11 month:01 https://dx.doi.org/10.1007/s00339-015-9589-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2016 2 11 01 |
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10.1007/s00339-015-9589-y doi (DE-627)SPR004158342 (SPR)s00339-015-9589-y-e DE-627 ger DE-627 rakwb eng Svavarsson, Halldor Gudfinnur verfasserin aut Large arrays of ultra-high aspect ratio periodic silicon nanowires obtained via top–down route 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2016 Abstract Metal-catalysed etching (MCE) is a simple and versatile method for fabrication of silicon nanowires, of high structural quality. When combined with laser interference lithography (LIL), large areas of periodic structures can be generated in only few steps. The aspect ratio of such periodic structure is however commonly not higher than several decades or very few hundred. Here, a combined MCE and LIL techniques were applied to fabricate dense (4 × $ 10^{8} $ $ cm^{−3} $), periodic arrays of vertically aligned silicon nanowires with aspect ratio of up to $ 10^{3} $. This is a considerable higher number than previously reported on for periodic silicon wire arrays prepared with top–down approaches. The wires were slightly tapered, with top and bottom diameters ranging from 370 to 195 nm and length of up to 200 μm. A potential use of the nanowires as light absorber is demonstrated by measuring reflection in integrating sphere. An average total absorption of ~97 % was observed for 200-μm-long wires in the spectral range of 450–1000 nm. A comparison to simulated absorption spectra is given. Transverse Magnetic (dpeaa)DE-He213 Transverse Electric (dpeaa)DE-He213 Silicon Nanowires (dpeaa)DE-He213 Wire Array (dpeaa)DE-He213 SiNWs Array (dpeaa)DE-He213 Hallgrimsson, Birgir Hrafn aut Niraula, Manoj aut Lee, Kyu Jin aut Magnusson, Robert aut Enthalten in Applied physics Berlin : Springer, 1973 122(2016), 2 vom: 11. Jan. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:122 year:2016 number:2 day:11 month:01 https://dx.doi.org/10.1007/s00339-015-9589-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2016 2 11 01 |
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Svavarsson, Halldor Gudfinnur @@aut@@ Hallgrimsson, Birgir Hrafn @@aut@@ Niraula, Manoj @@aut@@ Lee, Kyu Jin @@aut@@ Magnusson, Robert @@aut@@ |
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large arrays of ultra-high aspect ratio periodic silicon nanowires obtained via top–down route |
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Large arrays of ultra-high aspect ratio periodic silicon nanowires obtained via top–down route |
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Abstract Metal-catalysed etching (MCE) is a simple and versatile method for fabrication of silicon nanowires, of high structural quality. When combined with laser interference lithography (LIL), large areas of periodic structures can be generated in only few steps. The aspect ratio of such periodic structure is however commonly not higher than several decades or very few hundred. Here, a combined MCE and LIL techniques were applied to fabricate dense (4 × $ 10^{8} $ $ cm^{−3} $), periodic arrays of vertically aligned silicon nanowires with aspect ratio of up to $ 10^{3} $. This is a considerable higher number than previously reported on for periodic silicon wire arrays prepared with top–down approaches. The wires were slightly tapered, with top and bottom diameters ranging from 370 to 195 nm and length of up to 200 μm. A potential use of the nanowires as light absorber is demonstrated by measuring reflection in integrating sphere. An average total absorption of ~97 % was observed for 200-μm-long wires in the spectral range of 450–1000 nm. A comparison to simulated absorption spectra is given. © Springer-Verlag Berlin Heidelberg 2016 |
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Abstract Metal-catalysed etching (MCE) is a simple and versatile method for fabrication of silicon nanowires, of high structural quality. When combined with laser interference lithography (LIL), large areas of periodic structures can be generated in only few steps. The aspect ratio of such periodic structure is however commonly not higher than several decades or very few hundred. Here, a combined MCE and LIL techniques were applied to fabricate dense (4 × $ 10^{8} $ $ cm^{−3} $), periodic arrays of vertically aligned silicon nanowires with aspect ratio of up to $ 10^{3} $. This is a considerable higher number than previously reported on for periodic silicon wire arrays prepared with top–down approaches. The wires were slightly tapered, with top and bottom diameters ranging from 370 to 195 nm and length of up to 200 μm. A potential use of the nanowires as light absorber is demonstrated by measuring reflection in integrating sphere. An average total absorption of ~97 % was observed for 200-μm-long wires in the spectral range of 450–1000 nm. A comparison to simulated absorption spectra is given. © Springer-Verlag Berlin Heidelberg 2016 |
| abstract_unstemmed |
Abstract Metal-catalysed etching (MCE) is a simple and versatile method for fabrication of silicon nanowires, of high structural quality. When combined with laser interference lithography (LIL), large areas of periodic structures can be generated in only few steps. The aspect ratio of such periodic structure is however commonly not higher than several decades or very few hundred. Here, a combined MCE and LIL techniques were applied to fabricate dense (4 × $ 10^{8} $ $ cm^{−3} $), periodic arrays of vertically aligned silicon nanowires with aspect ratio of up to $ 10^{3} $. This is a considerable higher number than previously reported on for periodic silicon wire arrays prepared with top–down approaches. The wires were slightly tapered, with top and bottom diameters ranging from 370 to 195 nm and length of up to 200 μm. A potential use of the nanowires as light absorber is demonstrated by measuring reflection in integrating sphere. An average total absorption of ~97 % was observed for 200-μm-long wires in the spectral range of 450–1000 nm. A comparison to simulated absorption spectra is given. © Springer-Verlag Berlin Heidelberg 2016 |
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Large arrays of ultra-high aspect ratio periodic silicon nanowires obtained via top–down route |
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Hallgrimsson, Birgir Hrafn Niraula, Manoj Lee, Kyu Jin Magnusson, Robert |
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2024-07-03T23:54:04.157Z |
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| score |
7.3985653 |