The sandwiched-p-doped-layer hole injection structure to enhance the performance of inverted organic light-emitting diodes
Abstract The performance of inverted organic light-emitting diodes (IOLEDs) has been improved based on $ MoO_{3} $-doped N,N′-bis-(1-naphthyl)-diphenyl-1,1′-biphenyl-4,4′-diamine (2:1 NPB:$ MoO_{3} $ in mass ratio) and 4,4′-N,N′-dicarbazole-biphenyl (2:1 CBP:$ MoO_{3} $ in mass ratio). The sandwiche...
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| Autor*in: |
Qin, Dashan [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2016 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer-Verlag Berlin Heidelberg 2016 |
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| Übergeordnetes Werk: |
Enthalten in: Applied physics - Berlin : Springer, 1973, 122(2016), 2 vom: 22. Jan. |
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| Übergeordnetes Werk: |
volume:122 ; year:2016 ; number:2 ; day:22 ; month:01 |
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| DOI / URN: |
10.1007/s00339-016-9632-7 |
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| Katalog-ID: |
SPR004158784 |
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| 100 | 1 | |a Qin, Dashan |e verfasserin |4 aut | |
| 245 | 1 | 4 | |a The sandwiched-p-doped-layer hole injection structure to enhance the performance of inverted organic light-emitting diodes |
| 264 | 1 | |c 2016 | |
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| 520 | |a Abstract The performance of inverted organic light-emitting diodes (IOLEDs) has been improved based on $ MoO_{3} $-doped N,N′-bis-(1-naphthyl)-diphenyl-1,1′-biphenyl-4,4′-diamine (2:1 NPB:$ MoO_{3} $ in mass ratio) and 4,4′-N,N′-dicarbazole-biphenyl (2:1 CBP:$ MoO_{3} $ in mass ratio). The sandwiched-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 10 nm/NPB:$ MoO_{3} $ 5 nm/CBP:$ MoO_{3} $ 5 nm/Al showed increased device performance via enhancing hole current into the CBP, compared to the single-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 20 nm/Al, mostly due to the higher conductivity of NPB:$ MoO_{3} $ than that of CBP:$ MoO_{3} $; it also improved device current and thereby performance than the double-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 10 nm/NPB:$ MoO_{3} $ 10 nm/Al, mostly attributed to that the hole injection from Al to CBP:$ MoO_{3} $ was more efficient than that from Al to NPB:$ MoO_{3} $. The current research provides some insights in reducing the power loss toward the commercialization of IOLEDs. | ||
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| 650 | 4 | |a High Occupied Molecular Orbital |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Current Efficiency |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Hole Injection |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Driving Voltage |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Chen, Li |4 aut | |
| 700 | 1 | |a Jin, Song |4 aut | |
| 700 | 1 | |a Chen, Yuhuan |4 aut | |
| 700 | 1 | |a He, Beibei |4 aut | |
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10.1007/s00339-016-9632-7 doi (DE-627)SPR004158784 (SPR)s00339-016-9632-7-e DE-627 ger DE-627 rakwb eng Qin, Dashan verfasserin aut The sandwiched-p-doped-layer hole injection structure to enhance the performance of inverted organic light-emitting diodes 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2016 Abstract The performance of inverted organic light-emitting diodes (IOLEDs) has been improved based on $ MoO_{3} $-doped N,N′-bis-(1-naphthyl)-diphenyl-1,1′-biphenyl-4,4′-diamine (2:1 NPB:$ MoO_{3} $ in mass ratio) and 4,4′-N,N′-dicarbazole-biphenyl (2:1 CBP:$ MoO_{3} $ in mass ratio). The sandwiched-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 10 nm/NPB:$ MoO_{3} $ 5 nm/CBP:$ MoO_{3} $ 5 nm/Al showed increased device performance via enhancing hole current into the CBP, compared to the single-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 20 nm/Al, mostly due to the higher conductivity of NPB:$ MoO_{3} $ than that of CBP:$ MoO_{3} $; it also improved device current and thereby performance than the double-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 10 nm/NPB:$ MoO_{3} $ 10 nm/Al, mostly attributed to that the hole injection from Al to CBP:$ MoO_{3} $ was more efficient than that from Al to NPB:$ MoO_{3} $. The current research provides some insights in reducing the power loss toward the commercialization of IOLEDs. MoO3 (dpeaa)DE-He213 High Occupied Molecular Orbital (dpeaa)DE-He213 Current Efficiency (dpeaa)DE-He213 Hole Injection (dpeaa)DE-He213 Driving Voltage (dpeaa)DE-He213 Chen, Li aut Jin, Song aut Chen, Yuhuan aut He, Beibei aut Enthalten in Applied physics Berlin : Springer, 1973 122(2016), 2 vom: 22. Jan. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:122 year:2016 number:2 day:22 month:01 https://dx.doi.org/10.1007/s00339-016-9632-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2016 2 22 01 |
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10.1007/s00339-016-9632-7 doi (DE-627)SPR004158784 (SPR)s00339-016-9632-7-e DE-627 ger DE-627 rakwb eng Qin, Dashan verfasserin aut The sandwiched-p-doped-layer hole injection structure to enhance the performance of inverted organic light-emitting diodes 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2016 Abstract The performance of inverted organic light-emitting diodes (IOLEDs) has been improved based on $ MoO_{3} $-doped N,N′-bis-(1-naphthyl)-diphenyl-1,1′-biphenyl-4,4′-diamine (2:1 NPB:$ MoO_{3} $ in mass ratio) and 4,4′-N,N′-dicarbazole-biphenyl (2:1 CBP:$ MoO_{3} $ in mass ratio). The sandwiched-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 10 nm/NPB:$ MoO_{3} $ 5 nm/CBP:$ MoO_{3} $ 5 nm/Al showed increased device performance via enhancing hole current into the CBP, compared to the single-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 20 nm/Al, mostly due to the higher conductivity of NPB:$ MoO_{3} $ than that of CBP:$ MoO_{3} $; it also improved device current and thereby performance than the double-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 10 nm/NPB:$ MoO_{3} $ 10 nm/Al, mostly attributed to that the hole injection from Al to CBP:$ MoO_{3} $ was more efficient than that from Al to NPB:$ MoO_{3} $. The current research provides some insights in reducing the power loss toward the commercialization of IOLEDs. MoO3 (dpeaa)DE-He213 High Occupied Molecular Orbital (dpeaa)DE-He213 Current Efficiency (dpeaa)DE-He213 Hole Injection (dpeaa)DE-He213 Driving Voltage (dpeaa)DE-He213 Chen, Li aut Jin, Song aut Chen, Yuhuan aut He, Beibei aut Enthalten in Applied physics Berlin : Springer, 1973 122(2016), 2 vom: 22. Jan. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:122 year:2016 number:2 day:22 month:01 https://dx.doi.org/10.1007/s00339-016-9632-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2016 2 22 01 |
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10.1007/s00339-016-9632-7 doi (DE-627)SPR004158784 (SPR)s00339-016-9632-7-e DE-627 ger DE-627 rakwb eng Qin, Dashan verfasserin aut The sandwiched-p-doped-layer hole injection structure to enhance the performance of inverted organic light-emitting diodes 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2016 Abstract The performance of inverted organic light-emitting diodes (IOLEDs) has been improved based on $ MoO_{3} $-doped N,N′-bis-(1-naphthyl)-diphenyl-1,1′-biphenyl-4,4′-diamine (2:1 NPB:$ MoO_{3} $ in mass ratio) and 4,4′-N,N′-dicarbazole-biphenyl (2:1 CBP:$ MoO_{3} $ in mass ratio). The sandwiched-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 10 nm/NPB:$ MoO_{3} $ 5 nm/CBP:$ MoO_{3} $ 5 nm/Al showed increased device performance via enhancing hole current into the CBP, compared to the single-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 20 nm/Al, mostly due to the higher conductivity of NPB:$ MoO_{3} $ than that of CBP:$ MoO_{3} $; it also improved device current and thereby performance than the double-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 10 nm/NPB:$ MoO_{3} $ 10 nm/Al, mostly attributed to that the hole injection from Al to CBP:$ MoO_{3} $ was more efficient than that from Al to NPB:$ MoO_{3} $. The current research provides some insights in reducing the power loss toward the commercialization of IOLEDs. MoO3 (dpeaa)DE-He213 High Occupied Molecular Orbital (dpeaa)DE-He213 Current Efficiency (dpeaa)DE-He213 Hole Injection (dpeaa)DE-He213 Driving Voltage (dpeaa)DE-He213 Chen, Li aut Jin, Song aut Chen, Yuhuan aut He, Beibei aut Enthalten in Applied physics Berlin : Springer, 1973 122(2016), 2 vom: 22. Jan. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:122 year:2016 number:2 day:22 month:01 https://dx.doi.org/10.1007/s00339-016-9632-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2016 2 22 01 |
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10.1007/s00339-016-9632-7 doi (DE-627)SPR004158784 (SPR)s00339-016-9632-7-e DE-627 ger DE-627 rakwb eng Qin, Dashan verfasserin aut The sandwiched-p-doped-layer hole injection structure to enhance the performance of inverted organic light-emitting diodes 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2016 Abstract The performance of inverted organic light-emitting diodes (IOLEDs) has been improved based on $ MoO_{3} $-doped N,N′-bis-(1-naphthyl)-diphenyl-1,1′-biphenyl-4,4′-diamine (2:1 NPB:$ MoO_{3} $ in mass ratio) and 4,4′-N,N′-dicarbazole-biphenyl (2:1 CBP:$ MoO_{3} $ in mass ratio). The sandwiched-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 10 nm/NPB:$ MoO_{3} $ 5 nm/CBP:$ MoO_{3} $ 5 nm/Al showed increased device performance via enhancing hole current into the CBP, compared to the single-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 20 nm/Al, mostly due to the higher conductivity of NPB:$ MoO_{3} $ than that of CBP:$ MoO_{3} $; it also improved device current and thereby performance than the double-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 10 nm/NPB:$ MoO_{3} $ 10 nm/Al, mostly attributed to that the hole injection from Al to CBP:$ MoO_{3} $ was more efficient than that from Al to NPB:$ MoO_{3} $. The current research provides some insights in reducing the power loss toward the commercialization of IOLEDs. MoO3 (dpeaa)DE-He213 High Occupied Molecular Orbital (dpeaa)DE-He213 Current Efficiency (dpeaa)DE-He213 Hole Injection (dpeaa)DE-He213 Driving Voltage (dpeaa)DE-He213 Chen, Li aut Jin, Song aut Chen, Yuhuan aut He, Beibei aut Enthalten in Applied physics Berlin : Springer, 1973 122(2016), 2 vom: 22. Jan. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:122 year:2016 number:2 day:22 month:01 https://dx.doi.org/10.1007/s00339-016-9632-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2016 2 22 01 |
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10.1007/s00339-016-9632-7 doi (DE-627)SPR004158784 (SPR)s00339-016-9632-7-e DE-627 ger DE-627 rakwb eng Qin, Dashan verfasserin aut The sandwiched-p-doped-layer hole injection structure to enhance the performance of inverted organic light-emitting diodes 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2016 Abstract The performance of inverted organic light-emitting diodes (IOLEDs) has been improved based on $ MoO_{3} $-doped N,N′-bis-(1-naphthyl)-diphenyl-1,1′-biphenyl-4,4′-diamine (2:1 NPB:$ MoO_{3} $ in mass ratio) and 4,4′-N,N′-dicarbazole-biphenyl (2:1 CBP:$ MoO_{3} $ in mass ratio). The sandwiched-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 10 nm/NPB:$ MoO_{3} $ 5 nm/CBP:$ MoO_{3} $ 5 nm/Al showed increased device performance via enhancing hole current into the CBP, compared to the single-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 20 nm/Al, mostly due to the higher conductivity of NPB:$ MoO_{3} $ than that of CBP:$ MoO_{3} $; it also improved device current and thereby performance than the double-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 10 nm/NPB:$ MoO_{3} $ 10 nm/Al, mostly attributed to that the hole injection from Al to CBP:$ MoO_{3} $ was more efficient than that from Al to NPB:$ MoO_{3} $. The current research provides some insights in reducing the power loss toward the commercialization of IOLEDs. MoO3 (dpeaa)DE-He213 High Occupied Molecular Orbital (dpeaa)DE-He213 Current Efficiency (dpeaa)DE-He213 Hole Injection (dpeaa)DE-He213 Driving Voltage (dpeaa)DE-He213 Chen, Li aut Jin, Song aut Chen, Yuhuan aut He, Beibei aut Enthalten in Applied physics Berlin : Springer, 1973 122(2016), 2 vom: 22. Jan. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:122 year:2016 number:2 day:22 month:01 https://dx.doi.org/10.1007/s00339-016-9632-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2016 2 22 01 |
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Enthalten in Applied physics 122(2016), 2 vom: 22. Jan. volume:122 year:2016 number:2 day:22 month:01 |
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Enthalten in Applied physics 122(2016), 2 vom: 22. Jan. volume:122 year:2016 number:2 day:22 month:01 |
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MoO3 High Occupied Molecular Orbital Current Efficiency Hole Injection Driving Voltage |
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Qin, Dashan @@aut@@ Chen, Li @@aut@@ Jin, Song @@aut@@ Chen, Yuhuan @@aut@@ He, Beibei @@aut@@ |
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2016-01-22T00:00:00Z |
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The sandwiched-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 10 nm/NPB:$ MoO_{3} $ 5 nm/CBP:$ MoO_{3} $ 5 nm/Al showed increased device performance via enhancing hole current into the CBP, compared to the single-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 20 nm/Al, mostly due to the higher conductivity of NPB:$ MoO_{3} $ than that of CBP:$ MoO_{3} $; it also improved device current and thereby performance than the double-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 10 nm/NPB:$ MoO_{3} $ 10 nm/Al, mostly attributed to that the hole injection from Al to CBP:$ MoO_{3} $ was more efficient than that from Al to NPB:$ MoO_{3} $. 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Qin, Dashan |
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Qin, Dashan misc MoO3 misc High Occupied Molecular Orbital misc Current Efficiency misc Hole Injection misc Driving Voltage The sandwiched-p-doped-layer hole injection structure to enhance the performance of inverted organic light-emitting diodes |
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The sandwiched-p-doped-layer hole injection structure to enhance the performance of inverted organic light-emitting diodes MoO3 (dpeaa)DE-He213 High Occupied Molecular Orbital (dpeaa)DE-He213 Current Efficiency (dpeaa)DE-He213 Hole Injection (dpeaa)DE-He213 Driving Voltage (dpeaa)DE-He213 |
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sandwiched-p-doped-layer hole injection structure to enhance the performance of inverted organic light-emitting diodes |
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The sandwiched-p-doped-layer hole injection structure to enhance the performance of inverted organic light-emitting diodes |
| abstract |
Abstract The performance of inverted organic light-emitting diodes (IOLEDs) has been improved based on $ MoO_{3} $-doped N,N′-bis-(1-naphthyl)-diphenyl-1,1′-biphenyl-4,4′-diamine (2:1 NPB:$ MoO_{3} $ in mass ratio) and 4,4′-N,N′-dicarbazole-biphenyl (2:1 CBP:$ MoO_{3} $ in mass ratio). The sandwiched-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 10 nm/NPB:$ MoO_{3} $ 5 nm/CBP:$ MoO_{3} $ 5 nm/Al showed increased device performance via enhancing hole current into the CBP, compared to the single-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 20 nm/Al, mostly due to the higher conductivity of NPB:$ MoO_{3} $ than that of CBP:$ MoO_{3} $; it also improved device current and thereby performance than the double-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 10 nm/NPB:$ MoO_{3} $ 10 nm/Al, mostly attributed to that the hole injection from Al to CBP:$ MoO_{3} $ was more efficient than that from Al to NPB:$ MoO_{3} $. The current research provides some insights in reducing the power loss toward the commercialization of IOLEDs. © Springer-Verlag Berlin Heidelberg 2016 |
| abstractGer |
Abstract The performance of inverted organic light-emitting diodes (IOLEDs) has been improved based on $ MoO_{3} $-doped N,N′-bis-(1-naphthyl)-diphenyl-1,1′-biphenyl-4,4′-diamine (2:1 NPB:$ MoO_{3} $ in mass ratio) and 4,4′-N,N′-dicarbazole-biphenyl (2:1 CBP:$ MoO_{3} $ in mass ratio). The sandwiched-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 10 nm/NPB:$ MoO_{3} $ 5 nm/CBP:$ MoO_{3} $ 5 nm/Al showed increased device performance via enhancing hole current into the CBP, compared to the single-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 20 nm/Al, mostly due to the higher conductivity of NPB:$ MoO_{3} $ than that of CBP:$ MoO_{3} $; it also improved device current and thereby performance than the double-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 10 nm/NPB:$ MoO_{3} $ 10 nm/Al, mostly attributed to that the hole injection from Al to CBP:$ MoO_{3} $ was more efficient than that from Al to NPB:$ MoO_{3} $. The current research provides some insights in reducing the power loss toward the commercialization of IOLEDs. © Springer-Verlag Berlin Heidelberg 2016 |
| abstract_unstemmed |
Abstract The performance of inverted organic light-emitting diodes (IOLEDs) has been improved based on $ MoO_{3} $-doped N,N′-bis-(1-naphthyl)-diphenyl-1,1′-biphenyl-4,4′-diamine (2:1 NPB:$ MoO_{3} $ in mass ratio) and 4,4′-N,N′-dicarbazole-biphenyl (2:1 CBP:$ MoO_{3} $ in mass ratio). The sandwiched-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 10 nm/NPB:$ MoO_{3} $ 5 nm/CBP:$ MoO_{3} $ 5 nm/Al showed increased device performance via enhancing hole current into the CBP, compared to the single-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 20 nm/Al, mostly due to the higher conductivity of NPB:$ MoO_{3} $ than that of CBP:$ MoO_{3} $; it also improved device current and thereby performance than the double-p-doped-layer hole injection structure of CBP:$ MoO_{3} $ 10 nm/NPB:$ MoO_{3} $ 10 nm/Al, mostly attributed to that the hole injection from Al to CBP:$ MoO_{3} $ was more efficient than that from Al to NPB:$ MoO_{3} $. The current research provides some insights in reducing the power loss toward the commercialization of IOLEDs. © Springer-Verlag Berlin Heidelberg 2016 |
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| title_short |
The sandwiched-p-doped-layer hole injection structure to enhance the performance of inverted organic light-emitting diodes |
| url |
https://dx.doi.org/10.1007/s00339-016-9632-7 |
| remote_bool |
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| author2 |
Chen, Li Jin, Song Chen, Yuhuan He, Beibei |
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Chen, Li Jin, Song Chen, Yuhuan He, Beibei |
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| doi_str |
10.1007/s00339-016-9632-7 |
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2024-07-03T23:54:12.333Z |
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| score |
7.4027834 |