Point defect-induced magnetic properties in $ CuAlO_{2} $ films without magnetic impurities

Abstract The magnetic properties of the undoped $ CuAlO_{2} $ thin films with different compositions are examined. In order to understand this phenomenon and to determine the correlation between the magnetic and electrical properties and point defects, the X-ray photoelectron spectroscopy and Hall e...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Luo, Jie [verfasserIn] Lin, Yow-Jon

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2016

Schlagwörter:	Hole Concentration CuAlO2 Strong Ferromagnetism CuAlO2 Film La2O3 Nanoparticles

Anmerkung:	© Springer-Verlag Berlin Heidelberg 2016

Übergeordnetes Werk:	Enthalten in: Applied physics - Berlin : Springer, 1973, 122(2016), 3 vom: 22. Feb.
Übergeordnetes Werk:	volume:122 ; year:2016 ; number:3 ; day:22 ; month:02

Links:	Volltext

DOI / URN:	10.1007/s00339-016-9727-1

Katalog-ID:	SPR004159772

Internformat


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520			\|a Abstract The magnetic properties of the undoped $ CuAlO_{2} $ thin films with different compositions are examined. In order to understand this phenomenon and to determine the correlation between the magnetic and electrical properties and point defects, the X-ray photoelectron spectroscopy and Hall effect measurements are performed. Combining with Hall effect, X-ray photoelectron spectroscopy and alternating gradient magnetometer measurements, a direct link between the hole concentration, magnetism, copper vacancy ($ V_{Cu} $), oxygen vacancy, and interstitial oxygen ($ O_{i} $) is established. It is shown that an increase in the number of acceptors ($ V_{Cu} $ and $ O_{i} $) leads to an increase in the hole concentration. Based on theoretical and experimental investigations, the authors confirmed that both acceptors ($ V_{Cu} $ and $ O_{i} $) in $ CuAlO_{2} $ could induce the ferromagnetic behavior at room temperature.
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912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
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912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
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912			\|a GBV_ILN_2006
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912			\|a GBV_ILN_2008
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912			\|a GBV_ILN_2014
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Indexfelder

author_variant	j l jl y j l yjl
matchkey_str	article:14320630:2016----::ondfcidcdantcrprisnul_flsih
hierarchy_sort_str	2016
publishDate	2016
allfields	10.1007/s00339-016-9727-1 doi (DE-627)SPR004159772 (SPR)s00339-016-9727-1-e DE-627 ger DE-627 rakwb eng Luo, Jie verfasserin aut Point defect-induced magnetic properties in $ CuAlO_{2} $ films without magnetic impurities 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2016 Abstract The magnetic properties of the undoped $ CuAlO_{2} $ thin films with different compositions are examined. In order to understand this phenomenon and to determine the correlation between the magnetic and electrical properties and point defects, the X-ray photoelectron spectroscopy and Hall effect measurements are performed. Combining with Hall effect, X-ray photoelectron spectroscopy and alternating gradient magnetometer measurements, a direct link between the hole concentration, magnetism, copper vacancy ($ V_{Cu} $), oxygen vacancy, and interstitial oxygen ($ O_{i} $) is established. It is shown that an increase in the number of acceptors ($ V_{Cu} $ and $ O_{i} $) leads to an increase in the hole concentration. Based on theoretical and experimental investigations, the authors confirmed that both acceptors ($ V_{Cu} $ and $ O_{i} $) in $ CuAlO_{2} $ could induce the ferromagnetic behavior at room temperature. Hole Concentration (dpeaa)DE-He213 CuAlO2 (dpeaa)DE-He213 Strong Ferromagnetism (dpeaa)DE-He213 CuAlO2 Film (dpeaa)DE-He213 La2O3 Nanoparticles (dpeaa)DE-He213 Lin, Yow-Jon aut Enthalten in Applied physics Berlin : Springer, 1973 122(2016), 3 vom: 22. Feb. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:122 year:2016 number:3 day:22 month:02 https://dx.doi.org/10.1007/s00339-016-9727-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2016 3 22 02
spelling	10.1007/s00339-016-9727-1 doi (DE-627)SPR004159772 (SPR)s00339-016-9727-1-e DE-627 ger DE-627 rakwb eng Luo, Jie verfasserin aut Point defect-induced magnetic properties in $ CuAlO_{2} $ films without magnetic impurities 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2016 Abstract The magnetic properties of the undoped $ CuAlO_{2} $ thin films with different compositions are examined. In order to understand this phenomenon and to determine the correlation between the magnetic and electrical properties and point defects, the X-ray photoelectron spectroscopy and Hall effect measurements are performed. Combining with Hall effect, X-ray photoelectron spectroscopy and alternating gradient magnetometer measurements, a direct link between the hole concentration, magnetism, copper vacancy ($ V_{Cu} $), oxygen vacancy, and interstitial oxygen ($ O_{i} $) is established. It is shown that an increase in the number of acceptors ($ V_{Cu} $ and $ O_{i} $) leads to an increase in the hole concentration. Based on theoretical and experimental investigations, the authors confirmed that both acceptors ($ V_{Cu} $ and $ O_{i} $) in $ CuAlO_{2} $ could induce the ferromagnetic behavior at room temperature. Hole Concentration (dpeaa)DE-He213 CuAlO2 (dpeaa)DE-He213 Strong Ferromagnetism (dpeaa)DE-He213 CuAlO2 Film (dpeaa)DE-He213 La2O3 Nanoparticles (dpeaa)DE-He213 Lin, Yow-Jon aut Enthalten in Applied physics Berlin : Springer, 1973 122(2016), 3 vom: 22. Feb. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:122 year:2016 number:3 day:22 month:02 https://dx.doi.org/10.1007/s00339-016-9727-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2016 3 22 02
allfields_unstemmed	10.1007/s00339-016-9727-1 doi (DE-627)SPR004159772 (SPR)s00339-016-9727-1-e DE-627 ger DE-627 rakwb eng Luo, Jie verfasserin aut Point defect-induced magnetic properties in $ CuAlO_{2} $ films without magnetic impurities 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2016 Abstract The magnetic properties of the undoped $ CuAlO_{2} $ thin films with different compositions are examined. In order to understand this phenomenon and to determine the correlation between the magnetic and electrical properties and point defects, the X-ray photoelectron spectroscopy and Hall effect measurements are performed. Combining with Hall effect, X-ray photoelectron spectroscopy and alternating gradient magnetometer measurements, a direct link between the hole concentration, magnetism, copper vacancy ($ V_{Cu} $), oxygen vacancy, and interstitial oxygen ($ O_{i} $) is established. It is shown that an increase in the number of acceptors ($ V_{Cu} $ and $ O_{i} $) leads to an increase in the hole concentration. Based on theoretical and experimental investigations, the authors confirmed that both acceptors ($ V_{Cu} $ and $ O_{i} $) in $ CuAlO_{2} $ could induce the ferromagnetic behavior at room temperature. Hole Concentration (dpeaa)DE-He213 CuAlO2 (dpeaa)DE-He213 Strong Ferromagnetism (dpeaa)DE-He213 CuAlO2 Film (dpeaa)DE-He213 La2O3 Nanoparticles (dpeaa)DE-He213 Lin, Yow-Jon aut Enthalten in Applied physics Berlin : Springer, 1973 122(2016), 3 vom: 22. Feb. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:122 year:2016 number:3 day:22 month:02 https://dx.doi.org/10.1007/s00339-016-9727-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2016 3 22 02
allfieldsGer	10.1007/s00339-016-9727-1 doi (DE-627)SPR004159772 (SPR)s00339-016-9727-1-e DE-627 ger DE-627 rakwb eng Luo, Jie verfasserin aut Point defect-induced magnetic properties in $ CuAlO_{2} $ films without magnetic impurities 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2016 Abstract The magnetic properties of the undoped $ CuAlO_{2} $ thin films with different compositions are examined. In order to understand this phenomenon and to determine the correlation between the magnetic and electrical properties and point defects, the X-ray photoelectron spectroscopy and Hall effect measurements are performed. Combining with Hall effect, X-ray photoelectron spectroscopy and alternating gradient magnetometer measurements, a direct link between the hole concentration, magnetism, copper vacancy ($ V_{Cu} $), oxygen vacancy, and interstitial oxygen ($ O_{i} $) is established. It is shown that an increase in the number of acceptors ($ V_{Cu} $ and $ O_{i} $) leads to an increase in the hole concentration. Based on theoretical and experimental investigations, the authors confirmed that both acceptors ($ V_{Cu} $ and $ O_{i} $) in $ CuAlO_{2} $ could induce the ferromagnetic behavior at room temperature. Hole Concentration (dpeaa)DE-He213 CuAlO2 (dpeaa)DE-He213 Strong Ferromagnetism (dpeaa)DE-He213 CuAlO2 Film (dpeaa)DE-He213 La2O3 Nanoparticles (dpeaa)DE-He213 Lin, Yow-Jon aut Enthalten in Applied physics Berlin : Springer, 1973 122(2016), 3 vom: 22. Feb. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:122 year:2016 number:3 day:22 month:02 https://dx.doi.org/10.1007/s00339-016-9727-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2016 3 22 02
allfieldsSound	10.1007/s00339-016-9727-1 doi (DE-627)SPR004159772 (SPR)s00339-016-9727-1-e DE-627 ger DE-627 rakwb eng Luo, Jie verfasserin aut Point defect-induced magnetic properties in $ CuAlO_{2} $ films without magnetic impurities 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2016 Abstract The magnetic properties of the undoped $ CuAlO_{2} $ thin films with different compositions are examined. In order to understand this phenomenon and to determine the correlation between the magnetic and electrical properties and point defects, the X-ray photoelectron spectroscopy and Hall effect measurements are performed. Combining with Hall effect, X-ray photoelectron spectroscopy and alternating gradient magnetometer measurements, a direct link between the hole concentration, magnetism, copper vacancy ($ V_{Cu} $), oxygen vacancy, and interstitial oxygen ($ O_{i} $) is established. It is shown that an increase in the number of acceptors ($ V_{Cu} $ and $ O_{i} $) leads to an increase in the hole concentration. Based on theoretical and experimental investigations, the authors confirmed that both acceptors ($ V_{Cu} $ and $ O_{i} $) in $ CuAlO_{2} $ could induce the ferromagnetic behavior at room temperature. Hole Concentration (dpeaa)DE-He213 CuAlO2 (dpeaa)DE-He213 Strong Ferromagnetism (dpeaa)DE-He213 CuAlO2 Film (dpeaa)DE-He213 La2O3 Nanoparticles (dpeaa)DE-He213 Lin, Yow-Jon aut Enthalten in Applied physics Berlin : Springer, 1973 122(2016), 3 vom: 22. Feb. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:122 year:2016 number:3 day:22 month:02 https://dx.doi.org/10.1007/s00339-016-9727-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2016 3 22 02
language	English
source	Enthalten in Applied physics 122(2016), 3 vom: 22. Feb. volume:122 year:2016 number:3 day:22 month:02
sourceStr	Enthalten in Applied physics 122(2016), 3 vom: 22. Feb. volume:122 year:2016 number:3 day:22 month:02
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Hole Concentration CuAlO2 Strong Ferromagnetism CuAlO2 Film La2O3 Nanoparticles
isfreeaccess_bool	false
container_title	Applied physics
authorswithroles_txt_mv	Luo, Jie @@aut@@ Lin, Yow-Jon @@aut@@
publishDateDaySort_date	2016-02-22T00:00:00Z
hierarchy_top_id	235503231
id	SPR004159772
language_de	englisch
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author	Luo, Jie
spellingShingle	Luo, Jie misc Hole Concentration misc CuAlO2 misc Strong Ferromagnetism misc CuAlO2 Film misc La2O3 Nanoparticles Point defect-induced magnetic properties in $ CuAlO_{2} $ films without magnetic impurities
authorStr	Luo, Jie
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topic_title	Point defect-induced magnetic properties in $ CuAlO_{2} $ films without magnetic impurities Hole Concentration (dpeaa)DE-He213 CuAlO2 (dpeaa)DE-He213 Strong Ferromagnetism (dpeaa)DE-He213 CuAlO2 Film (dpeaa)DE-He213 La2O3 Nanoparticles (dpeaa)DE-He213
topic	misc Hole Concentration misc CuAlO2 misc Strong Ferromagnetism misc CuAlO2 Film misc La2O3 Nanoparticles
topic_unstemmed	misc Hole Concentration misc CuAlO2 misc Strong Ferromagnetism misc CuAlO2 Film misc La2O3 Nanoparticles
topic_browse	misc Hole Concentration misc CuAlO2 misc Strong Ferromagnetism misc CuAlO2 Film misc La2O3 Nanoparticles
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
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title	Point defect-induced magnetic properties in $ CuAlO_{2} $ films without magnetic impurities
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title_full	Point defect-induced magnetic properties in $ CuAlO_{2} $ films without magnetic impurities
author_sort	Luo, Jie
journal	Applied physics
journalStr	Applied physics
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author_browse	Luo, Jie Lin, Yow-Jon
container_volume	122
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author-letter	Luo, Jie
doi_str_mv	10.1007/s00339-016-9727-1
title_sort	point defect-induced magnetic properties in $ cualo_{2} $ films without magnetic impurities
title_auth	Point defect-induced magnetic properties in $ CuAlO_{2} $ films without magnetic impurities
abstract	Abstract The magnetic properties of the undoped $ CuAlO_{2} $ thin films with different compositions are examined. In order to understand this phenomenon and to determine the correlation between the magnetic and electrical properties and point defects, the X-ray photoelectron spectroscopy and Hall effect measurements are performed. Combining with Hall effect, X-ray photoelectron spectroscopy and alternating gradient magnetometer measurements, a direct link between the hole concentration, magnetism, copper vacancy ($ V_{Cu} $), oxygen vacancy, and interstitial oxygen ($ O_{i} $) is established. It is shown that an increase in the number of acceptors ($ V_{Cu} $ and $ O_{i} $) leads to an increase in the hole concentration. Based on theoretical and experimental investigations, the authors confirmed that both acceptors ($ V_{Cu} $ and $ O_{i} $) in $ CuAlO_{2} $ could induce the ferromagnetic behavior at room temperature. © Springer-Verlag Berlin Heidelberg 2016
abstractGer	Abstract The magnetic properties of the undoped $ CuAlO_{2} $ thin films with different compositions are examined. In order to understand this phenomenon and to determine the correlation between the magnetic and electrical properties and point defects, the X-ray photoelectron spectroscopy and Hall effect measurements are performed. Combining with Hall effect, X-ray photoelectron spectroscopy and alternating gradient magnetometer measurements, a direct link between the hole concentration, magnetism, copper vacancy ($ V_{Cu} $), oxygen vacancy, and interstitial oxygen ($ O_{i} $) is established. It is shown that an increase in the number of acceptors ($ V_{Cu} $ and $ O_{i} $) leads to an increase in the hole concentration. Based on theoretical and experimental investigations, the authors confirmed that both acceptors ($ V_{Cu} $ and $ O_{i} $) in $ CuAlO_{2} $ could induce the ferromagnetic behavior at room temperature. © Springer-Verlag Berlin Heidelberg 2016
abstract_unstemmed	Abstract The magnetic properties of the undoped $ CuAlO_{2} $ thin films with different compositions are examined. In order to understand this phenomenon and to determine the correlation between the magnetic and electrical properties and point defects, the X-ray photoelectron spectroscopy and Hall effect measurements are performed. Combining with Hall effect, X-ray photoelectron spectroscopy and alternating gradient magnetometer measurements, a direct link between the hole concentration, magnetism, copper vacancy ($ V_{Cu} $), oxygen vacancy, and interstitial oxygen ($ O_{i} $) is established. It is shown that an increase in the number of acceptors ($ V_{Cu} $ and $ O_{i} $) leads to an increase in the hole concentration. Based on theoretical and experimental investigations, the authors confirmed that both acceptors ($ V_{Cu} $ and $ O_{i} $) in $ CuAlO_{2} $ could induce the ferromagnetic behavior at room temperature. © Springer-Verlag Berlin Heidelberg 2016
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container_issue	3
title_short	Point defect-induced magnetic properties in $ CuAlO_{2} $ films without magnetic impurities
url	https://dx.doi.org/10.1007/s00339-016-9727-1
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author2	Lin, Yow-Jon
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doi_str	10.1007/s00339-016-9727-1
up_date	2024-07-03T23:54:30.354Z
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Point defect-induced magnetic properties in $ CuAlO_{2} $ films without magnetic impurities

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