Thermal stability of amorphous tungsten/tungsten nitride synthesis using HFCVD as a diffusion barrier for copper

Abstract The amorphous W/WN bi-layer with excellent thermal stability was successfully prepared by hot-filament chemical vapor deposition method on $ SiO_{2} $/Si substrate. It was found that the W/WN bi-layer is technological importance because of its low resistivity and good diffusion barrier prop...
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Autor*in:	Asgary, Somayeh [verfasserIn] Hantehzadeh, Mohammad Reza Ghoranneviss, Mahmood Boochani, Arash

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2016

Schlagwörter:	Barrier Layer Sheet Resistance Diffusion Barrier Diffraction Peak Intensity Sheet Resistivity

Anmerkung:	© Springer-Verlag Berlin Heidelberg 2016

Übergeordnetes Werk:	Enthalten in: Applied physics - Berlin : Springer, 1973, 122(2016), 5 vom: 14. Apr.
Übergeordnetes Werk:	volume:122 ; year:2016 ; number:5 ; day:14 ; month:04

Links:	Volltext

DOI / URN:	10.1007/s00339-016-0045-4

Katalog-ID:	SPR004163214

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245	1	0	\|a Thermal stability of amorphous tungsten/tungsten nitride synthesis using HFCVD as a diffusion barrier for copper
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520			\|a Abstract The amorphous W/WN bi-layer with excellent thermal stability was successfully prepared by hot-filament chemical vapor deposition method on $ SiO_{2} $/Si substrate. It was found that the W/WN bi-layer is technological importance because of its low resistivity and good diffusion barrier properties between Cu and Si up to 700 °C for 30 min. The thermal stability was evaluated by X-ray diffractometer (XRD) and scanning electron microscope. The XRD results show that the $ Cu_{3} $Si phase was formed by Cu diffusion through W/WN barrier for the 800 °C annealed sample. The formation of the Cu–Si compounds denotes the failure of the W/WN diffusion barrier with rapid increase in sheet resistance of the film. The microstructure of the interface between W/WN and Cu reflects the stability and breakdown of the barriers. The failure of this amorphous barrier occurs with heat treatment when the deposited amorphous barrier material crystallizes. The major part of Cu diffusion in polycrystalline structure with disordered grain boundaries is controlled by grain boundaries. AFM results indicated a rapid increase in surface roughness at the diffusion barrier failure temperature. It was found that the grain size plays an important factor to control the thermally stability of the W/WN bi-layer.
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700	1		\|a Boochani, Arash \|4 aut
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matchkey_str	article:14320630:2016----::hrasaiiyfmrhutnsetnsentieyteiuigfvaa
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publishDate	2016
allfields	10.1007/s00339-016-0045-4 doi (DE-627)SPR004163214 (SPR)s00339-016-0045-4-e DE-627 ger DE-627 rakwb eng Asgary, Somayeh verfasserin aut Thermal stability of amorphous tungsten/tungsten nitride synthesis using HFCVD as a diffusion barrier for copper 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2016 Abstract The amorphous W/WN bi-layer with excellent thermal stability was successfully prepared by hot-filament chemical vapor deposition method on $ SiO_{2} $/Si substrate. It was found that the W/WN bi-layer is technological importance because of its low resistivity and good diffusion barrier properties between Cu and Si up to 700 °C for 30 min. The thermal stability was evaluated by X-ray diffractometer (XRD) and scanning electron microscope. The XRD results show that the $ Cu_{3} $Si phase was formed by Cu diffusion through W/WN barrier for the 800 °C annealed sample. The formation of the Cu–Si compounds denotes the failure of the W/WN diffusion barrier with rapid increase in sheet resistance of the film. The microstructure of the interface between W/WN and Cu reflects the stability and breakdown of the barriers. The failure of this amorphous barrier occurs with heat treatment when the deposited amorphous barrier material crystallizes. The major part of Cu diffusion in polycrystalline structure with disordered grain boundaries is controlled by grain boundaries. AFM results indicated a rapid increase in surface roughness at the diffusion barrier failure temperature. It was found that the grain size plays an important factor to control the thermally stability of the W/WN bi-layer. Barrier Layer (dpeaa)DE-He213 Sheet Resistance (dpeaa)DE-He213 Diffusion Barrier (dpeaa)DE-He213 Diffraction Peak Intensity (dpeaa)DE-He213 Sheet Resistivity (dpeaa)DE-He213 Hantehzadeh, Mohammad Reza aut Ghoranneviss, Mahmood aut Boochani, Arash aut Enthalten in Applied physics Berlin : Springer, 1973 122(2016), 5 vom: 14. Apr. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:122 year:2016 number:5 day:14 month:04 https://dx.doi.org/10.1007/s00339-016-0045-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2016 5 14 04
spelling	10.1007/s00339-016-0045-4 doi (DE-627)SPR004163214 (SPR)s00339-016-0045-4-e DE-627 ger DE-627 rakwb eng Asgary, Somayeh verfasserin aut Thermal stability of amorphous tungsten/tungsten nitride synthesis using HFCVD as a diffusion barrier for copper 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2016 Abstract The amorphous W/WN bi-layer with excellent thermal stability was successfully prepared by hot-filament chemical vapor deposition method on $ SiO_{2} $/Si substrate. It was found that the W/WN bi-layer is technological importance because of its low resistivity and good diffusion barrier properties between Cu and Si up to 700 °C for 30 min. The thermal stability was evaluated by X-ray diffractometer (XRD) and scanning electron microscope. The XRD results show that the $ Cu_{3} $Si phase was formed by Cu diffusion through W/WN barrier for the 800 °C annealed sample. The formation of the Cu–Si compounds denotes the failure of the W/WN diffusion barrier with rapid increase in sheet resistance of the film. The microstructure of the interface between W/WN and Cu reflects the stability and breakdown of the barriers. The failure of this amorphous barrier occurs with heat treatment when the deposited amorphous barrier material crystallizes. The major part of Cu diffusion in polycrystalline structure with disordered grain boundaries is controlled by grain boundaries. AFM results indicated a rapid increase in surface roughness at the diffusion barrier failure temperature. It was found that the grain size plays an important factor to control the thermally stability of the W/WN bi-layer. Barrier Layer (dpeaa)DE-He213 Sheet Resistance (dpeaa)DE-He213 Diffusion Barrier (dpeaa)DE-He213 Diffraction Peak Intensity (dpeaa)DE-He213 Sheet Resistivity (dpeaa)DE-He213 Hantehzadeh, Mohammad Reza aut Ghoranneviss, Mahmood aut Boochani, Arash aut Enthalten in Applied physics Berlin : Springer, 1973 122(2016), 5 vom: 14. Apr. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:122 year:2016 number:5 day:14 month:04 https://dx.doi.org/10.1007/s00339-016-0045-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2016 5 14 04
allfields_unstemmed	10.1007/s00339-016-0045-4 doi (DE-627)SPR004163214 (SPR)s00339-016-0045-4-e DE-627 ger DE-627 rakwb eng Asgary, Somayeh verfasserin aut Thermal stability of amorphous tungsten/tungsten nitride synthesis using HFCVD as a diffusion barrier for copper 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2016 Abstract The amorphous W/WN bi-layer with excellent thermal stability was successfully prepared by hot-filament chemical vapor deposition method on $ SiO_{2} $/Si substrate. It was found that the W/WN bi-layer is technological importance because of its low resistivity and good diffusion barrier properties between Cu and Si up to 700 °C for 30 min. The thermal stability was evaluated by X-ray diffractometer (XRD) and scanning electron microscope. The XRD results show that the $ Cu_{3} $Si phase was formed by Cu diffusion through W/WN barrier for the 800 °C annealed sample. The formation of the Cu–Si compounds denotes the failure of the W/WN diffusion barrier with rapid increase in sheet resistance of the film. The microstructure of the interface between W/WN and Cu reflects the stability and breakdown of the barriers. The failure of this amorphous barrier occurs with heat treatment when the deposited amorphous barrier material crystallizes. The major part of Cu diffusion in polycrystalline structure with disordered grain boundaries is controlled by grain boundaries. AFM results indicated a rapid increase in surface roughness at the diffusion barrier failure temperature. It was found that the grain size plays an important factor to control the thermally stability of the W/WN bi-layer. Barrier Layer (dpeaa)DE-He213 Sheet Resistance (dpeaa)DE-He213 Diffusion Barrier (dpeaa)DE-He213 Diffraction Peak Intensity (dpeaa)DE-He213 Sheet Resistivity (dpeaa)DE-He213 Hantehzadeh, Mohammad Reza aut Ghoranneviss, Mahmood aut Boochani, Arash aut Enthalten in Applied physics Berlin : Springer, 1973 122(2016), 5 vom: 14. Apr. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:122 year:2016 number:5 day:14 month:04 https://dx.doi.org/10.1007/s00339-016-0045-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2016 5 14 04
allfieldsGer	10.1007/s00339-016-0045-4 doi (DE-627)SPR004163214 (SPR)s00339-016-0045-4-e DE-627 ger DE-627 rakwb eng Asgary, Somayeh verfasserin aut Thermal stability of amorphous tungsten/tungsten nitride synthesis using HFCVD as a diffusion barrier for copper 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2016 Abstract The amorphous W/WN bi-layer with excellent thermal stability was successfully prepared by hot-filament chemical vapor deposition method on $ SiO_{2} $/Si substrate. It was found that the W/WN bi-layer is technological importance because of its low resistivity and good diffusion barrier properties between Cu and Si up to 700 °C for 30 min. The thermal stability was evaluated by X-ray diffractometer (XRD) and scanning electron microscope. The XRD results show that the $ Cu_{3} $Si phase was formed by Cu diffusion through W/WN barrier for the 800 °C annealed sample. The formation of the Cu–Si compounds denotes the failure of the W/WN diffusion barrier with rapid increase in sheet resistance of the film. The microstructure of the interface between W/WN and Cu reflects the stability and breakdown of the barriers. The failure of this amorphous barrier occurs with heat treatment when the deposited amorphous barrier material crystallizes. The major part of Cu diffusion in polycrystalline structure with disordered grain boundaries is controlled by grain boundaries. AFM results indicated a rapid increase in surface roughness at the diffusion barrier failure temperature. It was found that the grain size plays an important factor to control the thermally stability of the W/WN bi-layer. Barrier Layer (dpeaa)DE-He213 Sheet Resistance (dpeaa)DE-He213 Diffusion Barrier (dpeaa)DE-He213 Diffraction Peak Intensity (dpeaa)DE-He213 Sheet Resistivity (dpeaa)DE-He213 Hantehzadeh, Mohammad Reza aut Ghoranneviss, Mahmood aut Boochani, Arash aut Enthalten in Applied physics Berlin : Springer, 1973 122(2016), 5 vom: 14. Apr. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:122 year:2016 number:5 day:14 month:04 https://dx.doi.org/10.1007/s00339-016-0045-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2016 5 14 04
allfieldsSound	10.1007/s00339-016-0045-4 doi (DE-627)SPR004163214 (SPR)s00339-016-0045-4-e DE-627 ger DE-627 rakwb eng Asgary, Somayeh verfasserin aut Thermal stability of amorphous tungsten/tungsten nitride synthesis using HFCVD as a diffusion barrier for copper 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag Berlin Heidelberg 2016 Abstract The amorphous W/WN bi-layer with excellent thermal stability was successfully prepared by hot-filament chemical vapor deposition method on $ SiO_{2} $/Si substrate. It was found that the W/WN bi-layer is technological importance because of its low resistivity and good diffusion barrier properties between Cu and Si up to 700 °C for 30 min. The thermal stability was evaluated by X-ray diffractometer (XRD) and scanning electron microscope. The XRD results show that the $ Cu_{3} $Si phase was formed by Cu diffusion through W/WN barrier for the 800 °C annealed sample. The formation of the Cu–Si compounds denotes the failure of the W/WN diffusion barrier with rapid increase in sheet resistance of the film. The microstructure of the interface between W/WN and Cu reflects the stability and breakdown of the barriers. The failure of this amorphous barrier occurs with heat treatment when the deposited amorphous barrier material crystallizes. The major part of Cu diffusion in polycrystalline structure with disordered grain boundaries is controlled by grain boundaries. AFM results indicated a rapid increase in surface roughness at the diffusion barrier failure temperature. It was found that the grain size plays an important factor to control the thermally stability of the W/WN bi-layer. Barrier Layer (dpeaa)DE-He213 Sheet Resistance (dpeaa)DE-He213 Diffusion Barrier (dpeaa)DE-He213 Diffraction Peak Intensity (dpeaa)DE-He213 Sheet Resistivity (dpeaa)DE-He213 Hantehzadeh, Mohammad Reza aut Ghoranneviss, Mahmood aut Boochani, Arash aut Enthalten in Applied physics Berlin : Springer, 1973 122(2016), 5 vom: 14. Apr. (DE-627)235503231 (DE-600)1398311-8 1432-0630 nnns volume:122 year:2016 number:5 day:14 month:04 https://dx.doi.org/10.1007/s00339-016-0045-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 122 2016 5 14 04
language	English
source	Enthalten in Applied physics 122(2016), 5 vom: 14. Apr. volume:122 year:2016 number:5 day:14 month:04
sourceStr	Enthalten in Applied physics 122(2016), 5 vom: 14. Apr. volume:122 year:2016 number:5 day:14 month:04
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Barrier Layer Sheet Resistance Diffusion Barrier Diffraction Peak Intensity Sheet Resistivity
isfreeaccess_bool	false
container_title	Applied physics
authorswithroles_txt_mv	Asgary, Somayeh @@aut@@ Hantehzadeh, Mohammad Reza @@aut@@ Ghoranneviss, Mahmood @@aut@@ Boochani, Arash @@aut@@
publishDateDaySort_date	2016-04-14T00:00:00Z
hierarchy_top_id	235503231
id	SPR004163214
language_de	englisch
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author	Asgary, Somayeh
spellingShingle	Asgary, Somayeh misc Barrier Layer misc Sheet Resistance misc Diffusion Barrier misc Diffraction Peak Intensity misc Sheet Resistivity Thermal stability of amorphous tungsten/tungsten nitride synthesis using HFCVD as a diffusion barrier for copper
authorStr	Asgary, Somayeh
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topic_title	Thermal stability of amorphous tungsten/tungsten nitride synthesis using HFCVD as a diffusion barrier for copper Barrier Layer (dpeaa)DE-He213 Sheet Resistance (dpeaa)DE-He213 Diffusion Barrier (dpeaa)DE-He213 Diffraction Peak Intensity (dpeaa)DE-He213 Sheet Resistivity (dpeaa)DE-He213
topic	misc Barrier Layer misc Sheet Resistance misc Diffusion Barrier misc Diffraction Peak Intensity misc Sheet Resistivity
topic_unstemmed	misc Barrier Layer misc Sheet Resistance misc Diffusion Barrier misc Diffraction Peak Intensity misc Sheet Resistivity
topic_browse	misc Barrier Layer misc Sheet Resistance misc Diffusion Barrier misc Diffraction Peak Intensity misc Sheet Resistivity
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
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title	Thermal stability of amorphous tungsten/tungsten nitride synthesis using HFCVD as a diffusion barrier for copper
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title_full	Thermal stability of amorphous tungsten/tungsten nitride synthesis using HFCVD as a diffusion barrier for copper
author_sort	Asgary, Somayeh
journal	Applied physics
journalStr	Applied physics
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author_browse	Asgary, Somayeh Hantehzadeh, Mohammad Reza Ghoranneviss, Mahmood Boochani, Arash
container_volume	122
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author-letter	Asgary, Somayeh
doi_str_mv	10.1007/s00339-016-0045-4
title_sort	thermal stability of amorphous tungsten/tungsten nitride synthesis using hfcvd as a diffusion barrier for copper
title_auth	Thermal stability of amorphous tungsten/tungsten nitride synthesis using HFCVD as a diffusion barrier for copper
abstract	Abstract The amorphous W/WN bi-layer with excellent thermal stability was successfully prepared by hot-filament chemical vapor deposition method on $ SiO_{2} $/Si substrate. It was found that the W/WN bi-layer is technological importance because of its low resistivity and good diffusion barrier properties between Cu and Si up to 700 °C for 30 min. The thermal stability was evaluated by X-ray diffractometer (XRD) and scanning electron microscope. The XRD results show that the $ Cu_{3} $Si phase was formed by Cu diffusion through W/WN barrier for the 800 °C annealed sample. The formation of the Cu–Si compounds denotes the failure of the W/WN diffusion barrier with rapid increase in sheet resistance of the film. The microstructure of the interface between W/WN and Cu reflects the stability and breakdown of the barriers. The failure of this amorphous barrier occurs with heat treatment when the deposited amorphous barrier material crystallizes. The major part of Cu diffusion in polycrystalline structure with disordered grain boundaries is controlled by grain boundaries. AFM results indicated a rapid increase in surface roughness at the diffusion barrier failure temperature. It was found that the grain size plays an important factor to control the thermally stability of the W/WN bi-layer. © Springer-Verlag Berlin Heidelberg 2016
abstractGer	Abstract The amorphous W/WN bi-layer with excellent thermal stability was successfully prepared by hot-filament chemical vapor deposition method on $ SiO_{2} $/Si substrate. It was found that the W/WN bi-layer is technological importance because of its low resistivity and good diffusion barrier properties between Cu and Si up to 700 °C for 30 min. The thermal stability was evaluated by X-ray diffractometer (XRD) and scanning electron microscope. The XRD results show that the $ Cu_{3} $Si phase was formed by Cu diffusion through W/WN barrier for the 800 °C annealed sample. The formation of the Cu–Si compounds denotes the failure of the W/WN diffusion barrier with rapid increase in sheet resistance of the film. The microstructure of the interface between W/WN and Cu reflects the stability and breakdown of the barriers. The failure of this amorphous barrier occurs with heat treatment when the deposited amorphous barrier material crystallizes. The major part of Cu diffusion in polycrystalline structure with disordered grain boundaries is controlled by grain boundaries. AFM results indicated a rapid increase in surface roughness at the diffusion barrier failure temperature. It was found that the grain size plays an important factor to control the thermally stability of the W/WN bi-layer. © Springer-Verlag Berlin Heidelberg 2016
abstract_unstemmed	Abstract The amorphous W/WN bi-layer with excellent thermal stability was successfully prepared by hot-filament chemical vapor deposition method on $ SiO_{2} $/Si substrate. It was found that the W/WN bi-layer is technological importance because of its low resistivity and good diffusion barrier properties between Cu and Si up to 700 °C for 30 min. The thermal stability was evaluated by X-ray diffractometer (XRD) and scanning electron microscope. The XRD results show that the $ Cu_{3} $Si phase was formed by Cu diffusion through W/WN barrier for the 800 °C annealed sample. The formation of the Cu–Si compounds denotes the failure of the W/WN diffusion barrier with rapid increase in sheet resistance of the film. The microstructure of the interface between W/WN and Cu reflects the stability and breakdown of the barriers. The failure of this amorphous barrier occurs with heat treatment when the deposited amorphous barrier material crystallizes. The major part of Cu diffusion in polycrystalline structure with disordered grain boundaries is controlled by grain boundaries. AFM results indicated a rapid increase in surface roughness at the diffusion barrier failure temperature. It was found that the grain size plays an important factor to control the thermally stability of the W/WN bi-layer. © Springer-Verlag Berlin Heidelberg 2016
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title_short	Thermal stability of amorphous tungsten/tungsten nitride synthesis using HFCVD as a diffusion barrier for copper
url	https://dx.doi.org/10.1007/s00339-016-0045-4
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author2	Hantehzadeh, Mohammad Reza Ghoranneviss, Mahmood Boochani, Arash
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doi_str	10.1007/s00339-016-0045-4
up_date	2024-07-03T23:55:32.236Z
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It was found that the W/WN bi-layer is technological importance because of its low resistivity and good diffusion barrier properties between Cu and Si up to 700 °C for 30 min. The thermal stability was evaluated by X-ray diffractometer (XRD) and scanning electron microscope. The XRD results show that the $ Cu_{3} $Si phase was formed by Cu diffusion through W/WN barrier for the 800 °C annealed sample. The formation of the Cu–Si compounds denotes the failure of the W/WN diffusion barrier with rapid increase in sheet resistance of the film. The microstructure of the interface between W/WN and Cu reflects the stability and breakdown of the barriers. The failure of this amorphous barrier occurs with heat treatment when the deposited amorphous barrier material crystallizes. The major part of Cu diffusion in polycrystalline structure with disordered grain boundaries is controlled by grain boundaries. 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Thermal stability of amorphous tungsten/tungsten nitride synthesis using HFCVD as a diffusion barrier for copper

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