Low-temperature performance of InP-based long-wavelength VCSELs
Abstract We have studied, for the first time, the parameters of long-wavelength InP-based buried tunnel junction (BTJ) VCSELs with substrate temperature varied in the range between 150 and 330 K. The BTJ-VCSELs with threshold currents <1 mA were designed by VERTILAS (Germany) to operate near 1512...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Lytkine, A. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2007 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer-Verlag 2007 |
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| Übergeordnetes Werk: |
Enthalten in: Applied physics - Berlin : Springer, 1981, 89(2007), 4 vom: 15. Nov., Seite 579-584 |
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| Übergeordnetes Werk: |
volume:89 ; year:2007 ; number:4 ; day:15 ; month:11 ; pages:579-584 |
| Links: |
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| DOI / URN: |
10.1007/s00340-007-2822-4 |
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| Katalog-ID: |
SPR00421921X |
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| 041 | |a eng | ||
| 100 | 1 | |a Lytkine, A. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Low-temperature performance of InP-based long-wavelength VCSELs |
| 264 | 1 | |c 2007 | |
| 336 | |a Text |b txt |2 rdacontent | ||
| 337 | |a Computermedien |b c |2 rdamedia | ||
| 338 | |a Online-Ressource |b cr |2 rdacarrier | ||
| 500 | |a © Springer-Verlag 2007 | ||
| 520 | |a Abstract We have studied, for the first time, the parameters of long-wavelength InP-based buried tunnel junction (BTJ) VCSELs with substrate temperature varied in the range between 150 and 330 K. The BTJ-VCSELs with threshold currents <1 mA were designed by VERTILAS (Germany) to operate near 1512 nm and 1577 nm at room temperature (models VL-1512 and VL-1577, respectively). Reducing the substrate temperature of the lasers from room temperature to 150 K resulted in more than a fourfold increase of the threshold injection current accompanied with threefold and twofold increases in output power and slope efficiency, respectively. We have observed continuous single-mode tuning over intervals up to ∼20 nm (VL-1512) and ∼22 nm (VL-1577) at constant injection currents and substrate temperatures varied in a 180 K range. The emission wavelength was found to shift linearly with temperature with rates of 0.11 nm/K and 0.12 nm/K for lasers VL-1512 and VL-1577, respectively. The single-mode laser output reached ∼3 mW for both lasers cooled down to 173 K. Gas sensors based on BTJ-VCSELs can be temperature tuned over wide spectral intervals using either a cooler or a low ambient temperature to control laser substrate temperature. Ultra-sensitive gas concentration measurements under low ambient temperatures may include chemical analysis of the lower earth stratosphere and of the martian atmosphere. | ||
| 650 | 4 | |a Substrate Temperature |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Injection Current |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Threshold Current |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Laser Output Power |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Martian Atmosphere |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Lim, A. |4 aut | |
| 700 | 1 | |a Bacque, J. |4 aut | |
| 700 | 1 | |a Jäger, W. |4 aut | |
| 700 | 1 | |a Tulip, J. |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Applied physics |d Berlin : Springer, 1981 |g 89(2007), 4 vom: 15. Nov., Seite 579-584 |w (DE-627)253389933 |w (DE-600)1458437-2 |x 1432-0649 |7 nnns |
| 773 | 1 | 8 | |g volume:89 |g year:2007 |g number:4 |g day:15 |g month:11 |g pages:579-584 |
| 856 | 4 | 0 | |u https://dx.doi.org/10.1007/s00340-007-2822-4 |z lizenzpflichtig |3 Volltext |
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10.1007/s00340-007-2822-4 doi (DE-627)SPR00421921X (SPR)s00340-007-2822-4-e DE-627 ger DE-627 rakwb eng Lytkine, A. verfasserin aut Low-temperature performance of InP-based long-wavelength VCSELs 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2007 Abstract We have studied, for the first time, the parameters of long-wavelength InP-based buried tunnel junction (BTJ) VCSELs with substrate temperature varied in the range between 150 and 330 K. The BTJ-VCSELs with threshold currents <1 mA were designed by VERTILAS (Germany) to operate near 1512 nm and 1577 nm at room temperature (models VL-1512 and VL-1577, respectively). Reducing the substrate temperature of the lasers from room temperature to 150 K resulted in more than a fourfold increase of the threshold injection current accompanied with threefold and twofold increases in output power and slope efficiency, respectively. We have observed continuous single-mode tuning over intervals up to ∼20 nm (VL-1512) and ∼22 nm (VL-1577) at constant injection currents and substrate temperatures varied in a 180 K range. The emission wavelength was found to shift linearly with temperature with rates of 0.11 nm/K and 0.12 nm/K for lasers VL-1512 and VL-1577, respectively. The single-mode laser output reached ∼3 mW for both lasers cooled down to 173 K. Gas sensors based on BTJ-VCSELs can be temperature tuned over wide spectral intervals using either a cooler or a low ambient temperature to control laser substrate temperature. Ultra-sensitive gas concentration measurements under low ambient temperatures may include chemical analysis of the lower earth stratosphere and of the martian atmosphere. Substrate Temperature (dpeaa)DE-He213 Injection Current (dpeaa)DE-He213 Threshold Current (dpeaa)DE-He213 Laser Output Power (dpeaa)DE-He213 Martian Atmosphere (dpeaa)DE-He213 Lim, A. aut Bacque, J. aut Jäger, W. aut Tulip, J. aut Enthalten in Applied physics Berlin : Springer, 1981 89(2007), 4 vom: 15. Nov., Seite 579-584 (DE-627)253389933 (DE-600)1458437-2 1432-0649 nnns volume:89 year:2007 number:4 day:15 month:11 pages:579-584 https://dx.doi.org/10.1007/s00340-007-2822-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 89 2007 4 15 11 579-584 |
| spelling |
10.1007/s00340-007-2822-4 doi (DE-627)SPR00421921X (SPR)s00340-007-2822-4-e DE-627 ger DE-627 rakwb eng Lytkine, A. verfasserin aut Low-temperature performance of InP-based long-wavelength VCSELs 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2007 Abstract We have studied, for the first time, the parameters of long-wavelength InP-based buried tunnel junction (BTJ) VCSELs with substrate temperature varied in the range between 150 and 330 K. The BTJ-VCSELs with threshold currents <1 mA were designed by VERTILAS (Germany) to operate near 1512 nm and 1577 nm at room temperature (models VL-1512 and VL-1577, respectively). Reducing the substrate temperature of the lasers from room temperature to 150 K resulted in more than a fourfold increase of the threshold injection current accompanied with threefold and twofold increases in output power and slope efficiency, respectively. We have observed continuous single-mode tuning over intervals up to ∼20 nm (VL-1512) and ∼22 nm (VL-1577) at constant injection currents and substrate temperatures varied in a 180 K range. The emission wavelength was found to shift linearly with temperature with rates of 0.11 nm/K and 0.12 nm/K for lasers VL-1512 and VL-1577, respectively. The single-mode laser output reached ∼3 mW for both lasers cooled down to 173 K. Gas sensors based on BTJ-VCSELs can be temperature tuned over wide spectral intervals using either a cooler or a low ambient temperature to control laser substrate temperature. Ultra-sensitive gas concentration measurements under low ambient temperatures may include chemical analysis of the lower earth stratosphere and of the martian atmosphere. Substrate Temperature (dpeaa)DE-He213 Injection Current (dpeaa)DE-He213 Threshold Current (dpeaa)DE-He213 Laser Output Power (dpeaa)DE-He213 Martian Atmosphere (dpeaa)DE-He213 Lim, A. aut Bacque, J. aut Jäger, W. aut Tulip, J. aut Enthalten in Applied physics Berlin : Springer, 1981 89(2007), 4 vom: 15. Nov., Seite 579-584 (DE-627)253389933 (DE-600)1458437-2 1432-0649 nnns volume:89 year:2007 number:4 day:15 month:11 pages:579-584 https://dx.doi.org/10.1007/s00340-007-2822-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 89 2007 4 15 11 579-584 |
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10.1007/s00340-007-2822-4 doi (DE-627)SPR00421921X (SPR)s00340-007-2822-4-e DE-627 ger DE-627 rakwb eng Lytkine, A. verfasserin aut Low-temperature performance of InP-based long-wavelength VCSELs 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2007 Abstract We have studied, for the first time, the parameters of long-wavelength InP-based buried tunnel junction (BTJ) VCSELs with substrate temperature varied in the range between 150 and 330 K. The BTJ-VCSELs with threshold currents <1 mA were designed by VERTILAS (Germany) to operate near 1512 nm and 1577 nm at room temperature (models VL-1512 and VL-1577, respectively). Reducing the substrate temperature of the lasers from room temperature to 150 K resulted in more than a fourfold increase of the threshold injection current accompanied with threefold and twofold increases in output power and slope efficiency, respectively. We have observed continuous single-mode tuning over intervals up to ∼20 nm (VL-1512) and ∼22 nm (VL-1577) at constant injection currents and substrate temperatures varied in a 180 K range. The emission wavelength was found to shift linearly with temperature with rates of 0.11 nm/K and 0.12 nm/K for lasers VL-1512 and VL-1577, respectively. The single-mode laser output reached ∼3 mW for both lasers cooled down to 173 K. Gas sensors based on BTJ-VCSELs can be temperature tuned over wide spectral intervals using either a cooler or a low ambient temperature to control laser substrate temperature. Ultra-sensitive gas concentration measurements under low ambient temperatures may include chemical analysis of the lower earth stratosphere and of the martian atmosphere. Substrate Temperature (dpeaa)DE-He213 Injection Current (dpeaa)DE-He213 Threshold Current (dpeaa)DE-He213 Laser Output Power (dpeaa)DE-He213 Martian Atmosphere (dpeaa)DE-He213 Lim, A. aut Bacque, J. aut Jäger, W. aut Tulip, J. aut Enthalten in Applied physics Berlin : Springer, 1981 89(2007), 4 vom: 15. Nov., Seite 579-584 (DE-627)253389933 (DE-600)1458437-2 1432-0649 nnns volume:89 year:2007 number:4 day:15 month:11 pages:579-584 https://dx.doi.org/10.1007/s00340-007-2822-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 89 2007 4 15 11 579-584 |
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10.1007/s00340-007-2822-4 doi (DE-627)SPR00421921X (SPR)s00340-007-2822-4-e DE-627 ger DE-627 rakwb eng Lytkine, A. verfasserin aut Low-temperature performance of InP-based long-wavelength VCSELs 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2007 Abstract We have studied, for the first time, the parameters of long-wavelength InP-based buried tunnel junction (BTJ) VCSELs with substrate temperature varied in the range between 150 and 330 K. The BTJ-VCSELs with threshold currents <1 mA were designed by VERTILAS (Germany) to operate near 1512 nm and 1577 nm at room temperature (models VL-1512 and VL-1577, respectively). Reducing the substrate temperature of the lasers from room temperature to 150 K resulted in more than a fourfold increase of the threshold injection current accompanied with threefold and twofold increases in output power and slope efficiency, respectively. We have observed continuous single-mode tuning over intervals up to ∼20 nm (VL-1512) and ∼22 nm (VL-1577) at constant injection currents and substrate temperatures varied in a 180 K range. The emission wavelength was found to shift linearly with temperature with rates of 0.11 nm/K and 0.12 nm/K for lasers VL-1512 and VL-1577, respectively. The single-mode laser output reached ∼3 mW for both lasers cooled down to 173 K. Gas sensors based on BTJ-VCSELs can be temperature tuned over wide spectral intervals using either a cooler or a low ambient temperature to control laser substrate temperature. Ultra-sensitive gas concentration measurements under low ambient temperatures may include chemical analysis of the lower earth stratosphere and of the martian atmosphere. Substrate Temperature (dpeaa)DE-He213 Injection Current (dpeaa)DE-He213 Threshold Current (dpeaa)DE-He213 Laser Output Power (dpeaa)DE-He213 Martian Atmosphere (dpeaa)DE-He213 Lim, A. aut Bacque, J. aut Jäger, W. aut Tulip, J. aut Enthalten in Applied physics Berlin : Springer, 1981 89(2007), 4 vom: 15. Nov., Seite 579-584 (DE-627)253389933 (DE-600)1458437-2 1432-0649 nnns volume:89 year:2007 number:4 day:15 month:11 pages:579-584 https://dx.doi.org/10.1007/s00340-007-2822-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 89 2007 4 15 11 579-584 |
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10.1007/s00340-007-2822-4 doi (DE-627)SPR00421921X (SPR)s00340-007-2822-4-e DE-627 ger DE-627 rakwb eng Lytkine, A. verfasserin aut Low-temperature performance of InP-based long-wavelength VCSELs 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2007 Abstract We have studied, for the first time, the parameters of long-wavelength InP-based buried tunnel junction (BTJ) VCSELs with substrate temperature varied in the range between 150 and 330 K. The BTJ-VCSELs with threshold currents <1 mA were designed by VERTILAS (Germany) to operate near 1512 nm and 1577 nm at room temperature (models VL-1512 and VL-1577, respectively). Reducing the substrate temperature of the lasers from room temperature to 150 K resulted in more than a fourfold increase of the threshold injection current accompanied with threefold and twofold increases in output power and slope efficiency, respectively. We have observed continuous single-mode tuning over intervals up to ∼20 nm (VL-1512) and ∼22 nm (VL-1577) at constant injection currents and substrate temperatures varied in a 180 K range. The emission wavelength was found to shift linearly with temperature with rates of 0.11 nm/K and 0.12 nm/K for lasers VL-1512 and VL-1577, respectively. The single-mode laser output reached ∼3 mW for both lasers cooled down to 173 K. Gas sensors based on BTJ-VCSELs can be temperature tuned over wide spectral intervals using either a cooler or a low ambient temperature to control laser substrate temperature. Ultra-sensitive gas concentration measurements under low ambient temperatures may include chemical analysis of the lower earth stratosphere and of the martian atmosphere. Substrate Temperature (dpeaa)DE-He213 Injection Current (dpeaa)DE-He213 Threshold Current (dpeaa)DE-He213 Laser Output Power (dpeaa)DE-He213 Martian Atmosphere (dpeaa)DE-He213 Lim, A. aut Bacque, J. aut Jäger, W. aut Tulip, J. aut Enthalten in Applied physics Berlin : Springer, 1981 89(2007), 4 vom: 15. Nov., Seite 579-584 (DE-627)253389933 (DE-600)1458437-2 1432-0649 nnns volume:89 year:2007 number:4 day:15 month:11 pages:579-584 https://dx.doi.org/10.1007/s00340-007-2822-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 89 2007 4 15 11 579-584 |
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Enthalten in Applied physics 89(2007), 4 vom: 15. Nov., Seite 579-584 volume:89 year:2007 number:4 day:15 month:11 pages:579-584 |
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The BTJ-VCSELs with threshold currents <1 mA were designed by VERTILAS (Germany) to operate near 1512 nm and 1577 nm at room temperature (models VL-1512 and VL-1577, respectively). Reducing the substrate temperature of the lasers from room temperature to 150 K resulted in more than a fourfold increase of the threshold injection current accompanied with threefold and twofold increases in output power and slope efficiency, respectively. We have observed continuous single-mode tuning over intervals up to ∼20 nm (VL-1512) and ∼22 nm (VL-1577) at constant injection currents and substrate temperatures varied in a 180 K range. The emission wavelength was found to shift linearly with temperature with rates of 0.11 nm/K and 0.12 nm/K for lasers VL-1512 and VL-1577, respectively. The single-mode laser output reached ∼3 mW for both lasers cooled down to 173 K. Gas sensors based on BTJ-VCSELs can be temperature tuned over wide spectral intervals using either a cooler or a low ambient temperature to control laser substrate temperature. 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Lytkine, A. |
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Lytkine, A. misc Substrate Temperature misc Injection Current misc Threshold Current misc Laser Output Power misc Martian Atmosphere Low-temperature performance of InP-based long-wavelength VCSELs |
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Low-temperature performance of InP-based long-wavelength VCSELs Substrate Temperature (dpeaa)DE-He213 Injection Current (dpeaa)DE-He213 Threshold Current (dpeaa)DE-He213 Laser Output Power (dpeaa)DE-He213 Martian Atmosphere (dpeaa)DE-He213 |
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Low-temperature performance of InP-based long-wavelength VCSELs |
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Lytkine, A. Lim, A. Bacque, J. Jäger, W. Tulip, J. |
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Elektronische Aufsätze |
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Lytkine, A. |
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10.1007/s00340-007-2822-4 |
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low-temperature performance of inp-based long-wavelength vcsels |
| title_auth |
Low-temperature performance of InP-based long-wavelength VCSELs |
| abstract |
Abstract We have studied, for the first time, the parameters of long-wavelength InP-based buried tunnel junction (BTJ) VCSELs with substrate temperature varied in the range between 150 and 330 K. The BTJ-VCSELs with threshold currents <1 mA were designed by VERTILAS (Germany) to operate near 1512 nm and 1577 nm at room temperature (models VL-1512 and VL-1577, respectively). Reducing the substrate temperature of the lasers from room temperature to 150 K resulted in more than a fourfold increase of the threshold injection current accompanied with threefold and twofold increases in output power and slope efficiency, respectively. We have observed continuous single-mode tuning over intervals up to ∼20 nm (VL-1512) and ∼22 nm (VL-1577) at constant injection currents and substrate temperatures varied in a 180 K range. The emission wavelength was found to shift linearly with temperature with rates of 0.11 nm/K and 0.12 nm/K for lasers VL-1512 and VL-1577, respectively. The single-mode laser output reached ∼3 mW for both lasers cooled down to 173 K. Gas sensors based on BTJ-VCSELs can be temperature tuned over wide spectral intervals using either a cooler or a low ambient temperature to control laser substrate temperature. Ultra-sensitive gas concentration measurements under low ambient temperatures may include chemical analysis of the lower earth stratosphere and of the martian atmosphere. © Springer-Verlag 2007 |
| abstractGer |
Abstract We have studied, for the first time, the parameters of long-wavelength InP-based buried tunnel junction (BTJ) VCSELs with substrate temperature varied in the range between 150 and 330 K. The BTJ-VCSELs with threshold currents <1 mA were designed by VERTILAS (Germany) to operate near 1512 nm and 1577 nm at room temperature (models VL-1512 and VL-1577, respectively). Reducing the substrate temperature of the lasers from room temperature to 150 K resulted in more than a fourfold increase of the threshold injection current accompanied with threefold and twofold increases in output power and slope efficiency, respectively. We have observed continuous single-mode tuning over intervals up to ∼20 nm (VL-1512) and ∼22 nm (VL-1577) at constant injection currents and substrate temperatures varied in a 180 K range. The emission wavelength was found to shift linearly with temperature with rates of 0.11 nm/K and 0.12 nm/K for lasers VL-1512 and VL-1577, respectively. The single-mode laser output reached ∼3 mW for both lasers cooled down to 173 K. Gas sensors based on BTJ-VCSELs can be temperature tuned over wide spectral intervals using either a cooler or a low ambient temperature to control laser substrate temperature. Ultra-sensitive gas concentration measurements under low ambient temperatures may include chemical analysis of the lower earth stratosphere and of the martian atmosphere. © Springer-Verlag 2007 |
| abstract_unstemmed |
Abstract We have studied, for the first time, the parameters of long-wavelength InP-based buried tunnel junction (BTJ) VCSELs with substrate temperature varied in the range between 150 and 330 K. The BTJ-VCSELs with threshold currents <1 mA were designed by VERTILAS (Germany) to operate near 1512 nm and 1577 nm at room temperature (models VL-1512 and VL-1577, respectively). Reducing the substrate temperature of the lasers from room temperature to 150 K resulted in more than a fourfold increase of the threshold injection current accompanied with threefold and twofold increases in output power and slope efficiency, respectively. We have observed continuous single-mode tuning over intervals up to ∼20 nm (VL-1512) and ∼22 nm (VL-1577) at constant injection currents and substrate temperatures varied in a 180 K range. The emission wavelength was found to shift linearly with temperature with rates of 0.11 nm/K and 0.12 nm/K for lasers VL-1512 and VL-1577, respectively. The single-mode laser output reached ∼3 mW for both lasers cooled down to 173 K. Gas sensors based on BTJ-VCSELs can be temperature tuned over wide spectral intervals using either a cooler or a low ambient temperature to control laser substrate temperature. Ultra-sensitive gas concentration measurements under low ambient temperatures may include chemical analysis of the lower earth stratosphere and of the martian atmosphere. © Springer-Verlag 2007 |
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Low-temperature performance of InP-based long-wavelength VCSELs |
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Lim, A. Bacque, J. Jäger, W. Tulip, J. |
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10.1007/s00340-007-2822-4 |
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| score |
7.3995914 |