Efficient high-power Ho:YAG laser directly in-band pumped by a GaSb-based laser diode stack at 1.9 μm
Abstract An efficient high-power Ho:YAG laser directly in-band pumped by a recently developed GaSb-based laser diode stack at 1.9 μm is demonstrated. At room temperature a maximum continuous wave output power of 55 W at 2.122 μm and a slope efficiency of 62% with respect to the incident pump power w...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Lamrini, S. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2011 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer-Verlag 2011 |
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| Übergeordnetes Werk: |
Enthalten in: Applied physics - Berlin : Springer, 1981, 106(2011), 2 vom: 03. Aug., Seite 315-319 |
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| Übergeordnetes Werk: |
volume:106 ; year:2011 ; number:2 ; day:03 ; month:08 ; pages:315-319 |
| Links: |
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| DOI / URN: |
10.1007/s00340-011-4670-5 |
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| 100 | 1 | |a Lamrini, S. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Efficient high-power Ho:YAG laser directly in-band pumped by a GaSb-based laser diode stack at 1.9 μm |
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| 520 | |a Abstract An efficient high-power Ho:YAG laser directly in-band pumped by a recently developed GaSb-based laser diode stack at 1.9 μm is demonstrated. At room temperature a maximum continuous wave output power of 55 W at 2.122 μm and a slope efficiency of 62% with respect to the incident pump power were achieved. For narrow linewidth laser operation a volume Bragg grating was used as output coupler. In wavelength stabilized operation a maximum output power of 18 W at 2.096 μm and a slope efficiency of 30% were obtained. In this case the linewidth is reduced from 1.2 nm to below 0.1 nm. Also spectroscopic properties of Ho:YAG crystals at room temperature are presented. | ||
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| 650 | 4 | |a Pump Light |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Koopmann, P. |4 aut | |
| 700 | 1 | |a Schäfer, M. |4 aut | |
| 700 | 1 | |a Scholle, K. |4 aut | |
| 700 | 1 | |a Fuhrberg, P. |4 aut | |
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10.1007/s00340-011-4670-5 doi (DE-627)SPR00423832X (SPR)s00340-011-4670-5-e DE-627 ger DE-627 rakwb eng Lamrini, S. verfasserin aut Efficient high-power Ho:YAG laser directly in-band pumped by a GaSb-based laser diode stack at 1.9 μm 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2011 Abstract An efficient high-power Ho:YAG laser directly in-band pumped by a recently developed GaSb-based laser diode stack at 1.9 μm is demonstrated. At room temperature a maximum continuous wave output power of 55 W at 2.122 μm and a slope efficiency of 62% with respect to the incident pump power were achieved. For narrow linewidth laser operation a volume Bragg grating was used as output coupler. In wavelength stabilized operation a maximum output power of 18 W at 2.096 μm and a slope efficiency of 30% were obtained. In this case the linewidth is reduced from 1.2 nm to below 0.1 nm. Also spectroscopic properties of Ho:YAG crystals at room temperature are presented. Pump Power (dpeaa)DE-He213 Output Coupling (dpeaa)DE-He213 Incident Pump Power (dpeaa)DE-He213 Emission Cross Section (dpeaa)DE-He213 Pump Light (dpeaa)DE-He213 Koopmann, P. aut Schäfer, M. aut Scholle, K. aut Fuhrberg, P. aut Enthalten in Applied physics Berlin : Springer, 1981 106(2011), 2 vom: 03. Aug., Seite 315-319 (DE-627)253389933 (DE-600)1458437-2 1432-0649 nnns volume:106 year:2011 number:2 day:03 month:08 pages:315-319 https://dx.doi.org/10.1007/s00340-011-4670-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 106 2011 2 03 08 315-319 |
| spelling |
10.1007/s00340-011-4670-5 doi (DE-627)SPR00423832X (SPR)s00340-011-4670-5-e DE-627 ger DE-627 rakwb eng Lamrini, S. verfasserin aut Efficient high-power Ho:YAG laser directly in-band pumped by a GaSb-based laser diode stack at 1.9 μm 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2011 Abstract An efficient high-power Ho:YAG laser directly in-band pumped by a recently developed GaSb-based laser diode stack at 1.9 μm is demonstrated. At room temperature a maximum continuous wave output power of 55 W at 2.122 μm and a slope efficiency of 62% with respect to the incident pump power were achieved. For narrow linewidth laser operation a volume Bragg grating was used as output coupler. In wavelength stabilized operation a maximum output power of 18 W at 2.096 μm and a slope efficiency of 30% were obtained. In this case the linewidth is reduced from 1.2 nm to below 0.1 nm. Also spectroscopic properties of Ho:YAG crystals at room temperature are presented. Pump Power (dpeaa)DE-He213 Output Coupling (dpeaa)DE-He213 Incident Pump Power (dpeaa)DE-He213 Emission Cross Section (dpeaa)DE-He213 Pump Light (dpeaa)DE-He213 Koopmann, P. aut Schäfer, M. aut Scholle, K. aut Fuhrberg, P. aut Enthalten in Applied physics Berlin : Springer, 1981 106(2011), 2 vom: 03. Aug., Seite 315-319 (DE-627)253389933 (DE-600)1458437-2 1432-0649 nnns volume:106 year:2011 number:2 day:03 month:08 pages:315-319 https://dx.doi.org/10.1007/s00340-011-4670-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 106 2011 2 03 08 315-319 |
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10.1007/s00340-011-4670-5 doi (DE-627)SPR00423832X (SPR)s00340-011-4670-5-e DE-627 ger DE-627 rakwb eng Lamrini, S. verfasserin aut Efficient high-power Ho:YAG laser directly in-band pumped by a GaSb-based laser diode stack at 1.9 μm 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2011 Abstract An efficient high-power Ho:YAG laser directly in-band pumped by a recently developed GaSb-based laser diode stack at 1.9 μm is demonstrated. At room temperature a maximum continuous wave output power of 55 W at 2.122 μm and a slope efficiency of 62% with respect to the incident pump power were achieved. For narrow linewidth laser operation a volume Bragg grating was used as output coupler. In wavelength stabilized operation a maximum output power of 18 W at 2.096 μm and a slope efficiency of 30% were obtained. In this case the linewidth is reduced from 1.2 nm to below 0.1 nm. Also spectroscopic properties of Ho:YAG crystals at room temperature are presented. Pump Power (dpeaa)DE-He213 Output Coupling (dpeaa)DE-He213 Incident Pump Power (dpeaa)DE-He213 Emission Cross Section (dpeaa)DE-He213 Pump Light (dpeaa)DE-He213 Koopmann, P. aut Schäfer, M. aut Scholle, K. aut Fuhrberg, P. aut Enthalten in Applied physics Berlin : Springer, 1981 106(2011), 2 vom: 03. Aug., Seite 315-319 (DE-627)253389933 (DE-600)1458437-2 1432-0649 nnns volume:106 year:2011 number:2 day:03 month:08 pages:315-319 https://dx.doi.org/10.1007/s00340-011-4670-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 106 2011 2 03 08 315-319 |
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10.1007/s00340-011-4670-5 doi (DE-627)SPR00423832X (SPR)s00340-011-4670-5-e DE-627 ger DE-627 rakwb eng Lamrini, S. verfasserin aut Efficient high-power Ho:YAG laser directly in-band pumped by a GaSb-based laser diode stack at 1.9 μm 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2011 Abstract An efficient high-power Ho:YAG laser directly in-band pumped by a recently developed GaSb-based laser diode stack at 1.9 μm is demonstrated. At room temperature a maximum continuous wave output power of 55 W at 2.122 μm and a slope efficiency of 62% with respect to the incident pump power were achieved. For narrow linewidth laser operation a volume Bragg grating was used as output coupler. In wavelength stabilized operation a maximum output power of 18 W at 2.096 μm and a slope efficiency of 30% were obtained. In this case the linewidth is reduced from 1.2 nm to below 0.1 nm. Also spectroscopic properties of Ho:YAG crystals at room temperature are presented. Pump Power (dpeaa)DE-He213 Output Coupling (dpeaa)DE-He213 Incident Pump Power (dpeaa)DE-He213 Emission Cross Section (dpeaa)DE-He213 Pump Light (dpeaa)DE-He213 Koopmann, P. aut Schäfer, M. aut Scholle, K. aut Fuhrberg, P. aut Enthalten in Applied physics Berlin : Springer, 1981 106(2011), 2 vom: 03. Aug., Seite 315-319 (DE-627)253389933 (DE-600)1458437-2 1432-0649 nnns volume:106 year:2011 number:2 day:03 month:08 pages:315-319 https://dx.doi.org/10.1007/s00340-011-4670-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 106 2011 2 03 08 315-319 |
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10.1007/s00340-011-4670-5 doi (DE-627)SPR00423832X (SPR)s00340-011-4670-5-e DE-627 ger DE-627 rakwb eng Lamrini, S. verfasserin aut Efficient high-power Ho:YAG laser directly in-band pumped by a GaSb-based laser diode stack at 1.9 μm 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer-Verlag 2011 Abstract An efficient high-power Ho:YAG laser directly in-band pumped by a recently developed GaSb-based laser diode stack at 1.9 μm is demonstrated. At room temperature a maximum continuous wave output power of 55 W at 2.122 μm and a slope efficiency of 62% with respect to the incident pump power were achieved. For narrow linewidth laser operation a volume Bragg grating was used as output coupler. In wavelength stabilized operation a maximum output power of 18 W at 2.096 μm and a slope efficiency of 30% were obtained. In this case the linewidth is reduced from 1.2 nm to below 0.1 nm. Also spectroscopic properties of Ho:YAG crystals at room temperature are presented. Pump Power (dpeaa)DE-He213 Output Coupling (dpeaa)DE-He213 Incident Pump Power (dpeaa)DE-He213 Emission Cross Section (dpeaa)DE-He213 Pump Light (dpeaa)DE-He213 Koopmann, P. aut Schäfer, M. aut Scholle, K. aut Fuhrberg, P. aut Enthalten in Applied physics Berlin : Springer, 1981 106(2011), 2 vom: 03. Aug., Seite 315-319 (DE-627)253389933 (DE-600)1458437-2 1432-0649 nnns volume:106 year:2011 number:2 day:03 month:08 pages:315-319 https://dx.doi.org/10.1007/s00340-011-4670-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 106 2011 2 03 08 315-319 |
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Lamrini, S. @@aut@@ Koopmann, P. @@aut@@ Schäfer, M. @@aut@@ Scholle, K. @@aut@@ Fuhrberg, P. @@aut@@ |
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Lamrini, S. |
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Lamrini, S. misc Pump Power misc Output Coupling misc Incident Pump Power misc Emission Cross Section misc Pump Light Efficient high-power Ho:YAG laser directly in-band pumped by a GaSb-based laser diode stack at 1.9 μm |
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Efficient high-power Ho:YAG laser directly in-band pumped by a GaSb-based laser diode stack at 1.9 μm Pump Power (dpeaa)DE-He213 Output Coupling (dpeaa)DE-He213 Incident Pump Power (dpeaa)DE-He213 Emission Cross Section (dpeaa)DE-He213 Pump Light (dpeaa)DE-He213 |
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Efficient high-power Ho:YAG laser directly in-band pumped by a GaSb-based laser diode stack at 1.9 μm |
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Efficient high-power Ho:YAG laser directly in-band pumped by a GaSb-based laser diode stack at 1.9 μm |
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Lamrini, S. Koopmann, P. Schäfer, M. Scholle, K. Fuhrberg, P. |
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Lamrini, S. |
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10.1007/s00340-011-4670-5 |
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efficient high-power ho:yag laser directly in-band pumped by a gasb-based laser diode stack at 1.9 μm |
| title_auth |
Efficient high-power Ho:YAG laser directly in-band pumped by a GaSb-based laser diode stack at 1.9 μm |
| abstract |
Abstract An efficient high-power Ho:YAG laser directly in-band pumped by a recently developed GaSb-based laser diode stack at 1.9 μm is demonstrated. At room temperature a maximum continuous wave output power of 55 W at 2.122 μm and a slope efficiency of 62% with respect to the incident pump power were achieved. For narrow linewidth laser operation a volume Bragg grating was used as output coupler. In wavelength stabilized operation a maximum output power of 18 W at 2.096 μm and a slope efficiency of 30% were obtained. In this case the linewidth is reduced from 1.2 nm to below 0.1 nm. Also spectroscopic properties of Ho:YAG crystals at room temperature are presented. © Springer-Verlag 2011 |
| abstractGer |
Abstract An efficient high-power Ho:YAG laser directly in-band pumped by a recently developed GaSb-based laser diode stack at 1.9 μm is demonstrated. At room temperature a maximum continuous wave output power of 55 W at 2.122 μm and a slope efficiency of 62% with respect to the incident pump power were achieved. For narrow linewidth laser operation a volume Bragg grating was used as output coupler. In wavelength stabilized operation a maximum output power of 18 W at 2.096 μm and a slope efficiency of 30% were obtained. In this case the linewidth is reduced from 1.2 nm to below 0.1 nm. Also spectroscopic properties of Ho:YAG crystals at room temperature are presented. © Springer-Verlag 2011 |
| abstract_unstemmed |
Abstract An efficient high-power Ho:YAG laser directly in-band pumped by a recently developed GaSb-based laser diode stack at 1.9 μm is demonstrated. At room temperature a maximum continuous wave output power of 55 W at 2.122 μm and a slope efficiency of 62% with respect to the incident pump power were achieved. For narrow linewidth laser operation a volume Bragg grating was used as output coupler. In wavelength stabilized operation a maximum output power of 18 W at 2.096 μm and a slope efficiency of 30% were obtained. In this case the linewidth is reduced from 1.2 nm to below 0.1 nm. Also spectroscopic properties of Ho:YAG crystals at room temperature are presented. © Springer-Verlag 2011 |
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Efficient high-power Ho:YAG laser directly in-band pumped by a GaSb-based laser diode stack at 1.9 μm |
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https://dx.doi.org/10.1007/s00340-011-4670-5 |
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Koopmann, P. Schäfer, M. Scholle, K. Fuhrberg, P. |
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10.1007/s00340-011-4670-5 |
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2024-07-04T00:16:13.021Z |
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| score |
7.3987684 |