A Monte Carlo study of the primary absorbed energy redistribution in X-ray lithography

Abstract The minimum feature size producible by LIGA X-ray lithography is fundamentally limited by the redistribution of primary doses via photoelectrons and the influence of the resulting dose distribution on resist development. Secondary radiation from mask and substrate are well known as source f...
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Gespeichert in:

Autor*in:	Meyer, P. [verfasserIn] Pantenburg, F. J. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2013

Schlagwörter:	PMMA Dose Distribution Primary Dose Secondary Radiation Dose Deposition

Übergeordnetes Werk:	Enthalten in: Microsystem technologies - Berlin : Springer, 1994, 20(2013), 10-11 vom: 10. Nov., Seite 1881-1889
Übergeordnetes Werk:	volume:20 ; year:2013 ; number:10-11 ; day:10 ; month:11 ; pages:1881-1889

Links:	Volltext

DOI / URN:	10.1007/s00542-013-1966-x

Katalog-ID:	SPR006828574

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520			\|a Abstract The minimum feature size producible by LIGA X-ray lithography is fundamentally limited by the redistribution of primary doses via photoelectrons and the influence of the resulting dose distribution on resist development. Secondary radiation from mask and substrate are well known as source for pattern distortion in deep X-ray lithography. Numerical simulations by means of Monte Carlo simulations using PENELOPE (Salvat et al. in PENELOPE-2008: a code system for Monte Carlo simulation of electron and photon transport. http://www.nea.fr/html/dbprog/penelope-2008.pdf, 2008) are applied to quantify these additional dose values in the resist/substrate interface and the irradiated/shadowed interface. A significant reduction of the additional dose by secondary radiation from the plating base is not observed for Au and Ti layers thicker than 10 nm. The influence of polarized or unpolarized X-rays might be neglected for structure dimensions larger than a few 10 nm. As an example of critical dimension, simulations were used to predict the structure quality of grating structures with a period of 2.4 μm and duty cycle 0.5 in a resist layer of 300 μm.
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912			\|a GBV_ILN_31
912			\|a GBV_ILN_32
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
912			\|a GBV_ILN_100
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_120
912			\|a GBV_ILN_138
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_250
912			\|a GBV_ILN_266
912			\|a GBV_ILN_267
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2031
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2039
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2070
912			\|a GBV_ILN_2086
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2107
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2116
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2119
912			\|a GBV_ILN_2122
912			\|a GBV_ILN_2129
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912			\|a GBV_ILN_2152
912			\|a GBV_ILN_2153
912			\|a GBV_ILN_2188
912			\|a GBV_ILN_2190
912			\|a GBV_ILN_2232
912			\|a GBV_ILN_2336
912			\|a GBV_ILN_2446
912			\|a GBV_ILN_2470
912			\|a GBV_ILN_2472
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_2522
912			\|a GBV_ILN_2548
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4046
912			\|a GBV_ILN_4112
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912			\|a GBV_ILN_4242
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912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
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912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
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912			\|a GBV_ILN_4326
912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4334
912			\|a GBV_ILN_4335
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912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4393
912			\|a GBV_ILN_4700
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952			\|d 20 \|j 2013 \|e 10-11 \|b 10 \|c 11 \|h 1881-1889

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matchkey_str	article:14321858:2013----::mnealsuyfhpiaybobdnryeitiui
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allfields	10.1007/s00542-013-1966-x doi (DE-627)SPR006828574 (SPR)s00542-013-1966-x-e DE-627 ger DE-627 rakwb eng 510 ASE 50.94 bkl Meyer, P. verfasserin aut A Monte Carlo study of the primary absorbed energy redistribution in X-ray lithography 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The minimum feature size producible by LIGA X-ray lithography is fundamentally limited by the redistribution of primary doses via photoelectrons and the influence of the resulting dose distribution on resist development. Secondary radiation from mask and substrate are well known as source for pattern distortion in deep X-ray lithography. Numerical simulations by means of Monte Carlo simulations using PENELOPE (Salvat et al. in PENELOPE-2008: a code system for Monte Carlo simulation of electron and photon transport. http://www.nea.fr/html/dbprog/penelope-2008.pdf, 2008) are applied to quantify these additional dose values in the resist/substrate interface and the irradiated/shadowed interface. A significant reduction of the additional dose by secondary radiation from the plating base is not observed for Au and Ti layers thicker than 10 nm. The influence of polarized or unpolarized X-rays might be neglected for structure dimensions larger than a few 10 nm. As an example of critical dimension, simulations were used to predict the structure quality of grating structures with a period of 2.4 μm and duty cycle 0.5 in a resist layer of 300 μm. PMMA (dpeaa)DE-He213 Dose Distribution (dpeaa)DE-He213 Primary Dose (dpeaa)DE-He213 Secondary Radiation (dpeaa)DE-He213 Dose Deposition (dpeaa)DE-He213 Pantenburg, F. J. verfasserin aut Enthalten in Microsystem technologies Berlin : Springer, 1994 20(2013), 10-11 vom: 10. Nov., Seite 1881-1889 (DE-627)270128182 (DE-600)1476561-5 1432-1858 nnns volume:20 year:2013 number:10-11 day:10 month:11 pages:1881-1889 https://dx.doi.org/10.1007/s00542-013-1966-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 50.94 ASE AR 20 2013 10-11 10 11 1881-1889
spelling	10.1007/s00542-013-1966-x doi (DE-627)SPR006828574 (SPR)s00542-013-1966-x-e DE-627 ger DE-627 rakwb eng 510 ASE 50.94 bkl Meyer, P. verfasserin aut A Monte Carlo study of the primary absorbed energy redistribution in X-ray lithography 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The minimum feature size producible by LIGA X-ray lithography is fundamentally limited by the redistribution of primary doses via photoelectrons and the influence of the resulting dose distribution on resist development. Secondary radiation from mask and substrate are well known as source for pattern distortion in deep X-ray lithography. Numerical simulations by means of Monte Carlo simulations using PENELOPE (Salvat et al. in PENELOPE-2008: a code system for Monte Carlo simulation of electron and photon transport. http://www.nea.fr/html/dbprog/penelope-2008.pdf, 2008) are applied to quantify these additional dose values in the resist/substrate interface and the irradiated/shadowed interface. A significant reduction of the additional dose by secondary radiation from the plating base is not observed for Au and Ti layers thicker than 10 nm. The influence of polarized or unpolarized X-rays might be neglected for structure dimensions larger than a few 10 nm. As an example of critical dimension, simulations were used to predict the structure quality of grating structures with a period of 2.4 μm and duty cycle 0.5 in a resist layer of 300 μm. PMMA (dpeaa)DE-He213 Dose Distribution (dpeaa)DE-He213 Primary Dose (dpeaa)DE-He213 Secondary Radiation (dpeaa)DE-He213 Dose Deposition (dpeaa)DE-He213 Pantenburg, F. J. verfasserin aut Enthalten in Microsystem technologies Berlin : Springer, 1994 20(2013), 10-11 vom: 10. Nov., Seite 1881-1889 (DE-627)270128182 (DE-600)1476561-5 1432-1858 nnns volume:20 year:2013 number:10-11 day:10 month:11 pages:1881-1889 https://dx.doi.org/10.1007/s00542-013-1966-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 50.94 ASE AR 20 2013 10-11 10 11 1881-1889
allfields_unstemmed	10.1007/s00542-013-1966-x doi (DE-627)SPR006828574 (SPR)s00542-013-1966-x-e DE-627 ger DE-627 rakwb eng 510 ASE 50.94 bkl Meyer, P. verfasserin aut A Monte Carlo study of the primary absorbed energy redistribution in X-ray lithography 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The minimum feature size producible by LIGA X-ray lithography is fundamentally limited by the redistribution of primary doses via photoelectrons and the influence of the resulting dose distribution on resist development. Secondary radiation from mask and substrate are well known as source for pattern distortion in deep X-ray lithography. Numerical simulations by means of Monte Carlo simulations using PENELOPE (Salvat et al. in PENELOPE-2008: a code system for Monte Carlo simulation of electron and photon transport. http://www.nea.fr/html/dbprog/penelope-2008.pdf, 2008) are applied to quantify these additional dose values in the resist/substrate interface and the irradiated/shadowed interface. A significant reduction of the additional dose by secondary radiation from the plating base is not observed for Au and Ti layers thicker than 10 nm. The influence of polarized or unpolarized X-rays might be neglected for structure dimensions larger than a few 10 nm. As an example of critical dimension, simulations were used to predict the structure quality of grating structures with a period of 2.4 μm and duty cycle 0.5 in a resist layer of 300 μm. PMMA (dpeaa)DE-He213 Dose Distribution (dpeaa)DE-He213 Primary Dose (dpeaa)DE-He213 Secondary Radiation (dpeaa)DE-He213 Dose Deposition (dpeaa)DE-He213 Pantenburg, F. J. verfasserin aut Enthalten in Microsystem technologies Berlin : Springer, 1994 20(2013), 10-11 vom: 10. Nov., Seite 1881-1889 (DE-627)270128182 (DE-600)1476561-5 1432-1858 nnns volume:20 year:2013 number:10-11 day:10 month:11 pages:1881-1889 https://dx.doi.org/10.1007/s00542-013-1966-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 50.94 ASE AR 20 2013 10-11 10 11 1881-1889
allfieldsGer	10.1007/s00542-013-1966-x doi (DE-627)SPR006828574 (SPR)s00542-013-1966-x-e DE-627 ger DE-627 rakwb eng 510 ASE 50.94 bkl Meyer, P. verfasserin aut A Monte Carlo study of the primary absorbed energy redistribution in X-ray lithography 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The minimum feature size producible by LIGA X-ray lithography is fundamentally limited by the redistribution of primary doses via photoelectrons and the influence of the resulting dose distribution on resist development. Secondary radiation from mask and substrate are well known as source for pattern distortion in deep X-ray lithography. Numerical simulations by means of Monte Carlo simulations using PENELOPE (Salvat et al. in PENELOPE-2008: a code system for Monte Carlo simulation of electron and photon transport. http://www.nea.fr/html/dbprog/penelope-2008.pdf, 2008) are applied to quantify these additional dose values in the resist/substrate interface and the irradiated/shadowed interface. A significant reduction of the additional dose by secondary radiation from the plating base is not observed for Au and Ti layers thicker than 10 nm. The influence of polarized or unpolarized X-rays might be neglected for structure dimensions larger than a few 10 nm. As an example of critical dimension, simulations were used to predict the structure quality of grating structures with a period of 2.4 μm and duty cycle 0.5 in a resist layer of 300 μm. PMMA (dpeaa)DE-He213 Dose Distribution (dpeaa)DE-He213 Primary Dose (dpeaa)DE-He213 Secondary Radiation (dpeaa)DE-He213 Dose Deposition (dpeaa)DE-He213 Pantenburg, F. J. verfasserin aut Enthalten in Microsystem technologies Berlin : Springer, 1994 20(2013), 10-11 vom: 10. Nov., Seite 1881-1889 (DE-627)270128182 (DE-600)1476561-5 1432-1858 nnns volume:20 year:2013 number:10-11 day:10 month:11 pages:1881-1889 https://dx.doi.org/10.1007/s00542-013-1966-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 50.94 ASE AR 20 2013 10-11 10 11 1881-1889
allfieldsSound	10.1007/s00542-013-1966-x doi (DE-627)SPR006828574 (SPR)s00542-013-1966-x-e DE-627 ger DE-627 rakwb eng 510 ASE 50.94 bkl Meyer, P. verfasserin aut A Monte Carlo study of the primary absorbed energy redistribution in X-ray lithography 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The minimum feature size producible by LIGA X-ray lithography is fundamentally limited by the redistribution of primary doses via photoelectrons and the influence of the resulting dose distribution on resist development. Secondary radiation from mask and substrate are well known as source for pattern distortion in deep X-ray lithography. Numerical simulations by means of Monte Carlo simulations using PENELOPE (Salvat et al. in PENELOPE-2008: a code system for Monte Carlo simulation of electron and photon transport. http://www.nea.fr/html/dbprog/penelope-2008.pdf, 2008) are applied to quantify these additional dose values in the resist/substrate interface and the irradiated/shadowed interface. A significant reduction of the additional dose by secondary radiation from the plating base is not observed for Au and Ti layers thicker than 10 nm. The influence of polarized or unpolarized X-rays might be neglected for structure dimensions larger than a few 10 nm. As an example of critical dimension, simulations were used to predict the structure quality of grating structures with a period of 2.4 μm and duty cycle 0.5 in a resist layer of 300 μm. PMMA (dpeaa)DE-He213 Dose Distribution (dpeaa)DE-He213 Primary Dose (dpeaa)DE-He213 Secondary Radiation (dpeaa)DE-He213 Dose Deposition (dpeaa)DE-He213 Pantenburg, F. J. verfasserin aut Enthalten in Microsystem technologies Berlin : Springer, 1994 20(2013), 10-11 vom: 10. Nov., Seite 1881-1889 (DE-627)270128182 (DE-600)1476561-5 1432-1858 nnns volume:20 year:2013 number:10-11 day:10 month:11 pages:1881-1889 https://dx.doi.org/10.1007/s00542-013-1966-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 50.94 ASE AR 20 2013 10-11 10 11 1881-1889
language	English
source	Enthalten in Microsystem technologies 20(2013), 10-11 vom: 10. Nov., Seite 1881-1889 volume:20 year:2013 number:10-11 day:10 month:11 pages:1881-1889
sourceStr	Enthalten in Microsystem technologies 20(2013), 10-11 vom: 10. Nov., Seite 1881-1889 volume:20 year:2013 number:10-11 day:10 month:11 pages:1881-1889
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	PMMA Dose Distribution Primary Dose Secondary Radiation Dose Deposition
dewey-raw	510
isfreeaccess_bool	false
container_title	Microsystem technologies
authorswithroles_txt_mv	Meyer, P. @@aut@@ Pantenburg, F. J. @@aut@@
publishDateDaySort_date	2013-11-10T00:00:00Z
hierarchy_top_id	270128182
dewey-sort	3510
id	SPR006828574
language_de	englisch
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Secondary radiation from mask and substrate are well known as source for pattern distortion in deep X-ray lithography. Numerical simulations by means of Monte Carlo simulations using PENELOPE (Salvat et al. in PENELOPE-2008: a code system for Monte Carlo simulation of electron and photon transport. http://www.nea.fr/html/dbprog/penelope-2008.pdf, 2008) are applied to quantify these additional dose values in the resist/substrate interface and the irradiated/shadowed interface. A significant reduction of the additional dose by secondary radiation from the plating base is not observed for Au and Ti layers thicker than 10 nm. The influence of polarized or unpolarized X-rays might be neglected for structure dimensions larger than a few 10 nm. 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author	Meyer, P.
spellingShingle	Meyer, P. ddc 510 bkl 50.94 misc PMMA misc Dose Distribution misc Primary Dose misc Secondary Radiation misc Dose Deposition A Monte Carlo study of the primary absorbed energy redistribution in X-ray lithography
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topic_title	510 ASE 50.94 bkl A Monte Carlo study of the primary absorbed energy redistribution in X-ray lithography PMMA (dpeaa)DE-He213 Dose Distribution (dpeaa)DE-He213 Primary Dose (dpeaa)DE-He213 Secondary Radiation (dpeaa)DE-He213 Dose Deposition (dpeaa)DE-He213
topic	ddc 510 bkl 50.94 misc PMMA misc Dose Distribution misc Primary Dose misc Secondary Radiation misc Dose Deposition
topic_unstemmed	ddc 510 bkl 50.94 misc PMMA misc Dose Distribution misc Primary Dose misc Secondary Radiation misc Dose Deposition
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title	A Monte Carlo study of the primary absorbed energy redistribution in X-ray lithography
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title_full	A Monte Carlo study of the primary absorbed energy redistribution in X-ray lithography
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title_sort	monte carlo study of the primary absorbed energy redistribution in x-ray lithography
title_auth	A Monte Carlo study of the primary absorbed energy redistribution in X-ray lithography
abstract	Abstract The minimum feature size producible by LIGA X-ray lithography is fundamentally limited by the redistribution of primary doses via photoelectrons and the influence of the resulting dose distribution on resist development. Secondary radiation from mask and substrate are well known as source for pattern distortion in deep X-ray lithography. Numerical simulations by means of Monte Carlo simulations using PENELOPE (Salvat et al. in PENELOPE-2008: a code system for Monte Carlo simulation of electron and photon transport. http://www.nea.fr/html/dbprog/penelope-2008.pdf, 2008) are applied to quantify these additional dose values in the resist/substrate interface and the irradiated/shadowed interface. A significant reduction of the additional dose by secondary radiation from the plating base is not observed for Au and Ti layers thicker than 10 nm. The influence of polarized or unpolarized X-rays might be neglected for structure dimensions larger than a few 10 nm. As an example of critical dimension, simulations were used to predict the structure quality of grating structures with a period of 2.4 μm and duty cycle 0.5 in a resist layer of 300 μm.
abstractGer	Abstract The minimum feature size producible by LIGA X-ray lithography is fundamentally limited by the redistribution of primary doses via photoelectrons and the influence of the resulting dose distribution on resist development. Secondary radiation from mask and substrate are well known as source for pattern distortion in deep X-ray lithography. Numerical simulations by means of Monte Carlo simulations using PENELOPE (Salvat et al. in PENELOPE-2008: a code system for Monte Carlo simulation of electron and photon transport. http://www.nea.fr/html/dbprog/penelope-2008.pdf, 2008) are applied to quantify these additional dose values in the resist/substrate interface and the irradiated/shadowed interface. A significant reduction of the additional dose by secondary radiation from the plating base is not observed for Au and Ti layers thicker than 10 nm. The influence of polarized or unpolarized X-rays might be neglected for structure dimensions larger than a few 10 nm. As an example of critical dimension, simulations were used to predict the structure quality of grating structures with a period of 2.4 μm and duty cycle 0.5 in a resist layer of 300 μm.
abstract_unstemmed	Abstract The minimum feature size producible by LIGA X-ray lithography is fundamentally limited by the redistribution of primary doses via photoelectrons and the influence of the resulting dose distribution on resist development. Secondary radiation from mask and substrate are well known as source for pattern distortion in deep X-ray lithography. Numerical simulations by means of Monte Carlo simulations using PENELOPE (Salvat et al. in PENELOPE-2008: a code system for Monte Carlo simulation of electron and photon transport. http://www.nea.fr/html/dbprog/penelope-2008.pdf, 2008) are applied to quantify these additional dose values in the resist/substrate interface and the irradiated/shadowed interface. A significant reduction of the additional dose by secondary radiation from the plating base is not observed for Au and Ti layers thicker than 10 nm. The influence of polarized or unpolarized X-rays might be neglected for structure dimensions larger than a few 10 nm. As an example of critical dimension, simulations were used to predict the structure quality of grating structures with a period of 2.4 μm and duty cycle 0.5 in a resist layer of 300 μm.
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container_issue	10-11
title_short	A Monte Carlo study of the primary absorbed energy redistribution in X-ray lithography
url	https://dx.doi.org/10.1007/s00542-013-1966-x
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author2	Pantenburg, F. J.
author2Str	Pantenburg, F. J.
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doi_str	10.1007/s00542-013-1966-x
up_date	2024-07-04T00:51:33.191Z
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A Monte Carlo study of the primary absorbed energy redistribution in X-ray lithography

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