Electrical characterization of micromachined AlN resonators at various back pressures
Abstract In this work, the fabrication process of piezoelectric cantilevers based on aluminum nitride films is presented. The cantilevers were electrically characterized in a vacuum chamber offering the possibility to close-loop control the back pressure from atmospheric conditions down to $ 10^{−2}...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Ababneh, Abdallah [verfasserIn] Al-Omari, A. N. [verfasserIn] Dagamseh, A. M. K. [verfasserIn] Qiu, H. C. [verfasserIn] Feili, D. [verfasserIn] Ruiz-Díez, V. [verfasserIn] Manzaneque, T. [verfasserIn] Hernando, J. [verfasserIn] Sánchez-Rojas, J. L. [verfasserIn] Bittner, A. [verfasserIn] Schmid, U. [verfasserIn] Seidel, H. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2013 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Microsystem technologies - Berlin : Springer, 1994, 20(2013), 4-5 vom: 11. Dez., Seite 663-670 |
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| Übergeordnetes Werk: |
volume:20 ; year:2013 ; number:4-5 ; day:11 ; month:12 ; pages:663-670 |
| Links: |
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| DOI / URN: |
10.1007/s00542-013-2003-9 |
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| Katalog-ID: |
SPR006829856 |
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| 245 | 1 | 0 | |a Electrical characterization of micromachined AlN resonators at various back pressures |
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| 520 | |a Abstract In this work, the fabrication process of piezoelectric cantilevers based on aluminum nitride films is presented. The cantilevers were electrically characterized in a vacuum chamber offering the possibility to close-loop control the back pressure from atmospheric conditions down to $ 10^{−2} $ mbar. The quality factor is an important figure of merit to evaluate the performance of micro resonators. In particular, three different modes were detected and analyzed: the first flexural mode, the second flexural mode and the first torsional mode. Among these three investigated modes, the first torsional mode has a higher quality factor compared to the others, which makes this mode more suitable for mass change detection applications as higher sensitivities are feasible. With the first torsional mode, quality factors of up to 4,557 are achievable at low chamber pressure, where the intrinsic damping is the dominating loss mechanism. The quality factor decreased to 1,050 at atmospheric pressure and is limited by viscous losses. | ||
| 650 | 4 | |a Quality Factor |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Bottom Electrode |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Torsional Mode |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Flexural Mode |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a High Quality Factor |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Al-Omari, A. N. |e verfasserin |4 aut | |
| 700 | 1 | |a Dagamseh, A. M. K. |e verfasserin |4 aut | |
| 700 | 1 | |a Qiu, H. C. |e verfasserin |4 aut | |
| 700 | 1 | |a Feili, D. |e verfasserin |4 aut | |
| 700 | 1 | |a Ruiz-Díez, V. |e verfasserin |4 aut | |
| 700 | 1 | |a Manzaneque, T. |e verfasserin |4 aut | |
| 700 | 1 | |a Hernando, J. |e verfasserin |4 aut | |
| 700 | 1 | |a Sánchez-Rojas, J. L. |e verfasserin |4 aut | |
| 700 | 1 | |a Bittner, A. |e verfasserin |4 aut | |
| 700 | 1 | |a Schmid, U. |e verfasserin |4 aut | |
| 700 | 1 | |a Seidel, H. |e verfasserin |4 aut | |
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| 912 | |a GBV_ILN_2027 | ||
| 912 | |a GBV_ILN_2031 | ||
| 912 | |a GBV_ILN_2034 | ||
| 912 | |a GBV_ILN_2037 | ||
| 912 | |a GBV_ILN_2038 | ||
| 912 | |a GBV_ILN_2039 | ||
| 912 | |a GBV_ILN_2044 | ||
| 912 | |a GBV_ILN_2048 | ||
| 912 | |a GBV_ILN_2049 | ||
| 912 | |a GBV_ILN_2050 | ||
| 912 | |a GBV_ILN_2055 | ||
| 912 | |a GBV_ILN_2057 | ||
| 912 | |a GBV_ILN_2059 | ||
| 912 | |a GBV_ILN_2061 | ||
| 912 | |a GBV_ILN_2064 | ||
| 912 | |a GBV_ILN_2065 | ||
| 912 | |a GBV_ILN_2068 | ||
| 912 | |a GBV_ILN_2070 | ||
| 912 | |a GBV_ILN_2086 | ||
| 912 | |a GBV_ILN_2088 | ||
| 912 | |a GBV_ILN_2093 | ||
| 912 | |a GBV_ILN_2106 | ||
| 912 | |a GBV_ILN_2107 | ||
| 912 | |a GBV_ILN_2108 | ||
| 912 | |a GBV_ILN_2110 | ||
| 912 | |a GBV_ILN_2111 | ||
| 912 | |a GBV_ILN_2112 | ||
| 912 | |a GBV_ILN_2113 | ||
| 912 | |a GBV_ILN_2116 | ||
| 912 | |a GBV_ILN_2118 | ||
| 912 | |a GBV_ILN_2119 | ||
| 912 | |a GBV_ILN_2122 | ||
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| 912 | |a GBV_ILN_2143 | ||
| 912 | |a GBV_ILN_2144 | ||
| 912 | |a GBV_ILN_2147 | ||
| 912 | |a GBV_ILN_2148 | ||
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| 912 | |a GBV_ILN_2188 | ||
| 912 | |a GBV_ILN_2190 | ||
| 912 | |a GBV_ILN_2232 | ||
| 912 | |a GBV_ILN_2336 | ||
| 912 | |a GBV_ILN_2446 | ||
| 912 | |a GBV_ILN_2470 | ||
| 912 | |a GBV_ILN_2472 | ||
| 912 | |a GBV_ILN_2507 | ||
| 912 | |a GBV_ILN_2522 | ||
| 912 | |a GBV_ILN_2548 | ||
| 912 | |a GBV_ILN_4035 | ||
| 912 | |a GBV_ILN_4037 | ||
| 912 | |a GBV_ILN_4046 | ||
| 912 | |a GBV_ILN_4112 | ||
| 912 | |a GBV_ILN_4125 | ||
| 912 | |a GBV_ILN_4242 | ||
| 912 | |a GBV_ILN_4246 | ||
| 912 | |a GBV_ILN_4249 | ||
| 912 | |a GBV_ILN_4251 | ||
| 912 | |a GBV_ILN_4305 | ||
| 912 | |a GBV_ILN_4306 | ||
| 912 | |a GBV_ILN_4307 | ||
| 912 | |a GBV_ILN_4313 | ||
| 912 | |a GBV_ILN_4322 | ||
| 912 | |a GBV_ILN_4323 | ||
| 912 | |a GBV_ILN_4324 | ||
| 912 | |a GBV_ILN_4325 | ||
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| 912 | |a GBV_ILN_4333 | ||
| 912 | |a GBV_ILN_4334 | ||
| 912 | |a GBV_ILN_4335 | ||
| 912 | |a GBV_ILN_4336 | ||
| 912 | |a GBV_ILN_4338 | ||
| 912 | |a GBV_ILN_4393 | ||
| 912 | |a GBV_ILN_4700 | ||
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10.1007/s00542-013-2003-9 doi (DE-627)SPR006829856 (SPR)s00542-013-2003-9-e DE-627 ger DE-627 rakwb eng 510 ASE 50.94 bkl Ababneh, Abdallah verfasserin aut Electrical characterization of micromachined AlN resonators at various back pressures 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this work, the fabrication process of piezoelectric cantilevers based on aluminum nitride films is presented. The cantilevers were electrically characterized in a vacuum chamber offering the possibility to close-loop control the back pressure from atmospheric conditions down to $ 10^{−2} $ mbar. The quality factor is an important figure of merit to evaluate the performance of micro resonators. In particular, three different modes were detected and analyzed: the first flexural mode, the second flexural mode and the first torsional mode. Among these three investigated modes, the first torsional mode has a higher quality factor compared to the others, which makes this mode more suitable for mass change detection applications as higher sensitivities are feasible. With the first torsional mode, quality factors of up to 4,557 are achievable at low chamber pressure, where the intrinsic damping is the dominating loss mechanism. The quality factor decreased to 1,050 at atmospheric pressure and is limited by viscous losses. Quality Factor (dpeaa)DE-He213 Bottom Electrode (dpeaa)DE-He213 Torsional Mode (dpeaa)DE-He213 Flexural Mode (dpeaa)DE-He213 High Quality Factor (dpeaa)DE-He213 Al-Omari, A. N. verfasserin aut Dagamseh, A. M. K. verfasserin aut Qiu, H. C. verfasserin aut Feili, D. verfasserin aut Ruiz-Díez, V. verfasserin aut Manzaneque, T. verfasserin aut Hernando, J. verfasserin aut Sánchez-Rojas, J. L. verfasserin aut Bittner, A. verfasserin aut Schmid, U. verfasserin aut Seidel, H. verfasserin aut Enthalten in Microsystem technologies Berlin : Springer, 1994 20(2013), 4-5 vom: 11. Dez., Seite 663-670 (DE-627)270128182 (DE-600)1476561-5 1432-1858 nnns volume:20 year:2013 number:4-5 day:11 month:12 pages:663-670 https://dx.doi.org/10.1007/s00542-013-2003-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 50.94 ASE AR 20 2013 4-5 11 12 663-670 |
| spelling |
10.1007/s00542-013-2003-9 doi (DE-627)SPR006829856 (SPR)s00542-013-2003-9-e DE-627 ger DE-627 rakwb eng 510 ASE 50.94 bkl Ababneh, Abdallah verfasserin aut Electrical characterization of micromachined AlN resonators at various back pressures 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this work, the fabrication process of piezoelectric cantilevers based on aluminum nitride films is presented. The cantilevers were electrically characterized in a vacuum chamber offering the possibility to close-loop control the back pressure from atmospheric conditions down to $ 10^{−2} $ mbar. The quality factor is an important figure of merit to evaluate the performance of micro resonators. In particular, three different modes were detected and analyzed: the first flexural mode, the second flexural mode and the first torsional mode. Among these three investigated modes, the first torsional mode has a higher quality factor compared to the others, which makes this mode more suitable for mass change detection applications as higher sensitivities are feasible. With the first torsional mode, quality factors of up to 4,557 are achievable at low chamber pressure, where the intrinsic damping is the dominating loss mechanism. The quality factor decreased to 1,050 at atmospheric pressure and is limited by viscous losses. Quality Factor (dpeaa)DE-He213 Bottom Electrode (dpeaa)DE-He213 Torsional Mode (dpeaa)DE-He213 Flexural Mode (dpeaa)DE-He213 High Quality Factor (dpeaa)DE-He213 Al-Omari, A. N. verfasserin aut Dagamseh, A. M. K. verfasserin aut Qiu, H. C. verfasserin aut Feili, D. verfasserin aut Ruiz-Díez, V. verfasserin aut Manzaneque, T. verfasserin aut Hernando, J. verfasserin aut Sánchez-Rojas, J. L. verfasserin aut Bittner, A. verfasserin aut Schmid, U. verfasserin aut Seidel, H. verfasserin aut Enthalten in Microsystem technologies Berlin : Springer, 1994 20(2013), 4-5 vom: 11. Dez., Seite 663-670 (DE-627)270128182 (DE-600)1476561-5 1432-1858 nnns volume:20 year:2013 number:4-5 day:11 month:12 pages:663-670 https://dx.doi.org/10.1007/s00542-013-2003-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 50.94 ASE AR 20 2013 4-5 11 12 663-670 |
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10.1007/s00542-013-2003-9 doi (DE-627)SPR006829856 (SPR)s00542-013-2003-9-e DE-627 ger DE-627 rakwb eng 510 ASE 50.94 bkl Ababneh, Abdallah verfasserin aut Electrical characterization of micromachined AlN resonators at various back pressures 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this work, the fabrication process of piezoelectric cantilevers based on aluminum nitride films is presented. The cantilevers were electrically characterized in a vacuum chamber offering the possibility to close-loop control the back pressure from atmospheric conditions down to $ 10^{−2} $ mbar. The quality factor is an important figure of merit to evaluate the performance of micro resonators. In particular, three different modes were detected and analyzed: the first flexural mode, the second flexural mode and the first torsional mode. Among these three investigated modes, the first torsional mode has a higher quality factor compared to the others, which makes this mode more suitable for mass change detection applications as higher sensitivities are feasible. With the first torsional mode, quality factors of up to 4,557 are achievable at low chamber pressure, where the intrinsic damping is the dominating loss mechanism. The quality factor decreased to 1,050 at atmospheric pressure and is limited by viscous losses. Quality Factor (dpeaa)DE-He213 Bottom Electrode (dpeaa)DE-He213 Torsional Mode (dpeaa)DE-He213 Flexural Mode (dpeaa)DE-He213 High Quality Factor (dpeaa)DE-He213 Al-Omari, A. N. verfasserin aut Dagamseh, A. M. K. verfasserin aut Qiu, H. C. verfasserin aut Feili, D. verfasserin aut Ruiz-Díez, V. verfasserin aut Manzaneque, T. verfasserin aut Hernando, J. verfasserin aut Sánchez-Rojas, J. L. verfasserin aut Bittner, A. verfasserin aut Schmid, U. verfasserin aut Seidel, H. verfasserin aut Enthalten in Microsystem technologies Berlin : Springer, 1994 20(2013), 4-5 vom: 11. Dez., Seite 663-670 (DE-627)270128182 (DE-600)1476561-5 1432-1858 nnns volume:20 year:2013 number:4-5 day:11 month:12 pages:663-670 https://dx.doi.org/10.1007/s00542-013-2003-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 50.94 ASE AR 20 2013 4-5 11 12 663-670 |
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10.1007/s00542-013-2003-9 doi (DE-627)SPR006829856 (SPR)s00542-013-2003-9-e DE-627 ger DE-627 rakwb eng 510 ASE 50.94 bkl Ababneh, Abdallah verfasserin aut Electrical characterization of micromachined AlN resonators at various back pressures 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this work, the fabrication process of piezoelectric cantilevers based on aluminum nitride films is presented. The cantilevers were electrically characterized in a vacuum chamber offering the possibility to close-loop control the back pressure from atmospheric conditions down to $ 10^{−2} $ mbar. The quality factor is an important figure of merit to evaluate the performance of micro resonators. In particular, three different modes were detected and analyzed: the first flexural mode, the second flexural mode and the first torsional mode. Among these three investigated modes, the first torsional mode has a higher quality factor compared to the others, which makes this mode more suitable for mass change detection applications as higher sensitivities are feasible. With the first torsional mode, quality factors of up to 4,557 are achievable at low chamber pressure, where the intrinsic damping is the dominating loss mechanism. The quality factor decreased to 1,050 at atmospheric pressure and is limited by viscous losses. Quality Factor (dpeaa)DE-He213 Bottom Electrode (dpeaa)DE-He213 Torsional Mode (dpeaa)DE-He213 Flexural Mode (dpeaa)DE-He213 High Quality Factor (dpeaa)DE-He213 Al-Omari, A. N. verfasserin aut Dagamseh, A. M. K. verfasserin aut Qiu, H. C. verfasserin aut Feili, D. verfasserin aut Ruiz-Díez, V. verfasserin aut Manzaneque, T. verfasserin aut Hernando, J. verfasserin aut Sánchez-Rojas, J. L. verfasserin aut Bittner, A. verfasserin aut Schmid, U. verfasserin aut Seidel, H. verfasserin aut Enthalten in Microsystem technologies Berlin : Springer, 1994 20(2013), 4-5 vom: 11. Dez., Seite 663-670 (DE-627)270128182 (DE-600)1476561-5 1432-1858 nnns volume:20 year:2013 number:4-5 day:11 month:12 pages:663-670 https://dx.doi.org/10.1007/s00542-013-2003-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 50.94 ASE AR 20 2013 4-5 11 12 663-670 |
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10.1007/s00542-013-2003-9 doi (DE-627)SPR006829856 (SPR)s00542-013-2003-9-e DE-627 ger DE-627 rakwb eng 510 ASE 50.94 bkl Ababneh, Abdallah verfasserin aut Electrical characterization of micromachined AlN resonators at various back pressures 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this work, the fabrication process of piezoelectric cantilevers based on aluminum nitride films is presented. The cantilevers were electrically characterized in a vacuum chamber offering the possibility to close-loop control the back pressure from atmospheric conditions down to $ 10^{−2} $ mbar. The quality factor is an important figure of merit to evaluate the performance of micro resonators. In particular, three different modes were detected and analyzed: the first flexural mode, the second flexural mode and the first torsional mode. Among these three investigated modes, the first torsional mode has a higher quality factor compared to the others, which makes this mode more suitable for mass change detection applications as higher sensitivities are feasible. With the first torsional mode, quality factors of up to 4,557 are achievable at low chamber pressure, where the intrinsic damping is the dominating loss mechanism. The quality factor decreased to 1,050 at atmospheric pressure and is limited by viscous losses. Quality Factor (dpeaa)DE-He213 Bottom Electrode (dpeaa)DE-He213 Torsional Mode (dpeaa)DE-He213 Flexural Mode (dpeaa)DE-He213 High Quality Factor (dpeaa)DE-He213 Al-Omari, A. N. verfasserin aut Dagamseh, A. M. K. verfasserin aut Qiu, H. C. verfasserin aut Feili, D. verfasserin aut Ruiz-Díez, V. verfasserin aut Manzaneque, T. verfasserin aut Hernando, J. verfasserin aut Sánchez-Rojas, J. L. verfasserin aut Bittner, A. verfasserin aut Schmid, U. verfasserin aut Seidel, H. verfasserin aut Enthalten in Microsystem technologies Berlin : Springer, 1994 20(2013), 4-5 vom: 11. Dez., Seite 663-670 (DE-627)270128182 (DE-600)1476561-5 1432-1858 nnns volume:20 year:2013 number:4-5 day:11 month:12 pages:663-670 https://dx.doi.org/10.1007/s00542-013-2003-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 50.94 ASE AR 20 2013 4-5 11 12 663-670 |
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Enthalten in Microsystem technologies 20(2013), 4-5 vom: 11. Dez., Seite 663-670 volume:20 year:2013 number:4-5 day:11 month:12 pages:663-670 |
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Quality Factor Bottom Electrode Torsional Mode Flexural Mode High Quality Factor |
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Ababneh, Abdallah @@aut@@ Al-Omari, A. N. @@aut@@ Dagamseh, A. M. K. @@aut@@ Qiu, H. C. @@aut@@ Feili, D. @@aut@@ Ruiz-Díez, V. @@aut@@ Manzaneque, T. @@aut@@ Hernando, J. @@aut@@ Sánchez-Rojas, J. L. @@aut@@ Bittner, A. @@aut@@ Schmid, U. @@aut@@ Seidel, H. @@aut@@ |
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The cantilevers were electrically characterized in a vacuum chamber offering the possibility to close-loop control the back pressure from atmospheric conditions down to $ 10^{−2} $ mbar. The quality factor is an important figure of merit to evaluate the performance of micro resonators. In particular, three different modes were detected and analyzed: the first flexural mode, the second flexural mode and the first torsional mode. Among these three investigated modes, the first torsional mode has a higher quality factor compared to the others, which makes this mode more suitable for mass change detection applications as higher sensitivities are feasible. With the first torsional mode, quality factors of up to 4,557 are achievable at low chamber pressure, where the intrinsic damping is the dominating loss mechanism. 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Ababneh, Abdallah |
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Ababneh, Abdallah ddc 510 bkl 50.94 misc Quality Factor misc Bottom Electrode misc Torsional Mode misc Flexural Mode misc High Quality Factor Electrical characterization of micromachined AlN resonators at various back pressures |
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510 ASE 50.94 bkl Electrical characterization of micromachined AlN resonators at various back pressures Quality Factor (dpeaa)DE-He213 Bottom Electrode (dpeaa)DE-He213 Torsional Mode (dpeaa)DE-He213 Flexural Mode (dpeaa)DE-He213 High Quality Factor (dpeaa)DE-He213 |
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Ababneh, Abdallah Al-Omari, A. N. Dagamseh, A. M. K. Qiu, H. C. Feili, D. Ruiz-Díez, V. Manzaneque, T. Hernando, J. Sánchez-Rojas, J. L. Bittner, A. Schmid, U. Seidel, H. |
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Elektronische Aufsätze |
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Ababneh, Abdallah |
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electrical characterization of micromachined aln resonators at various back pressures |
| title_auth |
Electrical characterization of micromachined AlN resonators at various back pressures |
| abstract |
Abstract In this work, the fabrication process of piezoelectric cantilevers based on aluminum nitride films is presented. The cantilevers were electrically characterized in a vacuum chamber offering the possibility to close-loop control the back pressure from atmospheric conditions down to $ 10^{−2} $ mbar. The quality factor is an important figure of merit to evaluate the performance of micro resonators. In particular, three different modes were detected and analyzed: the first flexural mode, the second flexural mode and the first torsional mode. Among these three investigated modes, the first torsional mode has a higher quality factor compared to the others, which makes this mode more suitable for mass change detection applications as higher sensitivities are feasible. With the first torsional mode, quality factors of up to 4,557 are achievable at low chamber pressure, where the intrinsic damping is the dominating loss mechanism. The quality factor decreased to 1,050 at atmospheric pressure and is limited by viscous losses. |
| abstractGer |
Abstract In this work, the fabrication process of piezoelectric cantilevers based on aluminum nitride films is presented. The cantilevers were electrically characterized in a vacuum chamber offering the possibility to close-loop control the back pressure from atmospheric conditions down to $ 10^{−2} $ mbar. The quality factor is an important figure of merit to evaluate the performance of micro resonators. In particular, three different modes were detected and analyzed: the first flexural mode, the second flexural mode and the first torsional mode. Among these three investigated modes, the first torsional mode has a higher quality factor compared to the others, which makes this mode more suitable for mass change detection applications as higher sensitivities are feasible. With the first torsional mode, quality factors of up to 4,557 are achievable at low chamber pressure, where the intrinsic damping is the dominating loss mechanism. The quality factor decreased to 1,050 at atmospheric pressure and is limited by viscous losses. |
| abstract_unstemmed |
Abstract In this work, the fabrication process of piezoelectric cantilevers based on aluminum nitride films is presented. The cantilevers were electrically characterized in a vacuum chamber offering the possibility to close-loop control the back pressure from atmospheric conditions down to $ 10^{−2} $ mbar. The quality factor is an important figure of merit to evaluate the performance of micro resonators. In particular, three different modes were detected and analyzed: the first flexural mode, the second flexural mode and the first torsional mode. Among these three investigated modes, the first torsional mode has a higher quality factor compared to the others, which makes this mode more suitable for mass change detection applications as higher sensitivities are feasible. With the first torsional mode, quality factors of up to 4,557 are achievable at low chamber pressure, where the intrinsic damping is the dominating loss mechanism. The quality factor decreased to 1,050 at atmospheric pressure and is limited by viscous losses. |
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Electrical characterization of micromachined AlN resonators at various back pressures |
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| score |
7.4028378 |