Design and fabrication of a square shape bulk mode MEMS resonators

Abstract This paper reports the design, simulation and fabrication of a micromechanical square shape resonators fabricated in single crystal silicon using a silicon on isolator wafer. Two different types of excitation for square shape resonators were used to stimulate Lame mode and square mode of re...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Zarifi, Mohammad Hossein [verfasserIn] Daneshmand, Mojgan [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2014

Schlagwörter:	Quality Factor Mode Resonator High Quality Factor Resonance Frequency Shift Resonance Plate

Übergeordnetes Werk:	Enthalten in: Microsystem technologies - Berlin : Springer, 1994, 21(2014), 11 vom: 19. Okt., Seite 2455-2462
Übergeordnetes Werk:	volume:21 ; year:2014 ; number:11 ; day:19 ; month:10 ; pages:2455-2462

Links:	Volltext

DOI / URN:	10.1007/s00542-014-2347-9

Katalog-ID:	SPR006831982

Internformat


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520			\|a Abstract This paper reports the design, simulation and fabrication of a micromechanical square shape resonators fabricated in single crystal silicon using a silicon on isolator wafer. Two different types of excitation for square shape resonators were used to stimulate Lame mode and square mode of resonance. The fabricated devices were studied under different bias voltage and in air at room temperature. The highest quality factor measured for the Lame mode resonator was 11,121 and for the square mode was 9,120 for square mode at 3.17 and 4.01 MHz, under the 80 V DC bias voltage across 1.5 μm actuation gap. It has been shown that by adding raggedy edge, the coupling capacitor has increased. Mass detection capabilities of these resonators were also investigated by adding an extra layer of gold. Frequency and quality factor variation was observed for each of the fabricated resonators. Adding a mass of 76 pgr leads to resonance frequency shift of 3.1 kHz in Lame mode structure. In this experiment quality factor drop was observed because of continues film layer of gold metal, with a thickness of 100 nm.
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912			\|a GBV_ILN_60
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912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
912			\|a GBV_ILN_100
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_120
912			\|a GBV_ILN_138
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_250
912			\|a GBV_ILN_266
912			\|a GBV_ILN_267
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2031
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2039
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2070
912			\|a GBV_ILN_2086
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2107
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2116
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2119
912			\|a GBV_ILN_2122
912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
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912			\|a GBV_ILN_2147
912			\|a GBV_ILN_2148
912			\|a GBV_ILN_2152
912			\|a GBV_ILN_2153
912			\|a GBV_ILN_2188
912			\|a GBV_ILN_2190
912			\|a GBV_ILN_2232
912			\|a GBV_ILN_2336
912			\|a GBV_ILN_2446
912			\|a GBV_ILN_2470
912			\|a GBV_ILN_2472
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_2522
912			\|a GBV_ILN_2548
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912			\|a GBV_ILN_4037
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912			\|a GBV_ILN_4335
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Indexfelder

author_variant	m h z mh mhz m d md
matchkey_str	article:14321858:2014----::einnfbiainfsursaeukoe
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bklnumber	50.94
publishDate	2014
allfields	10.1007/s00542-014-2347-9 doi (DE-627)SPR006831982 (SPR)s00542-014-2347-9-e DE-627 ger DE-627 rakwb eng 510 ASE 50.94 bkl Zarifi, Mohammad Hossein verfasserin aut Design and fabrication of a square shape bulk mode MEMS resonators 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper reports the design, simulation and fabrication of a micromechanical square shape resonators fabricated in single crystal silicon using a silicon on isolator wafer. Two different types of excitation for square shape resonators were used to stimulate Lame mode and square mode of resonance. The fabricated devices were studied under different bias voltage and in air at room temperature. The highest quality factor measured for the Lame mode resonator was 11,121 and for the square mode was 9,120 for square mode at 3.17 and 4.01 MHz, under the 80 V DC bias voltage across 1.5 μm actuation gap. It has been shown that by adding raggedy edge, the coupling capacitor has increased. Mass detection capabilities of these resonators were also investigated by adding an extra layer of gold. Frequency and quality factor variation was observed for each of the fabricated resonators. Adding a mass of 76 pgr leads to resonance frequency shift of 3.1 kHz in Lame mode structure. In this experiment quality factor drop was observed because of continues film layer of gold metal, with a thickness of 100 nm. Quality Factor (dpeaa)DE-He213 Mode Resonator (dpeaa)DE-He213 High Quality Factor (dpeaa)DE-He213 Resonance Frequency Shift (dpeaa)DE-He213 Resonance Plate (dpeaa)DE-He213 Daneshmand, Mojgan verfasserin aut Enthalten in Microsystem technologies Berlin : Springer, 1994 21(2014), 11 vom: 19. Okt., Seite 2455-2462 (DE-627)270128182 (DE-600)1476561-5 1432-1858 nnns volume:21 year:2014 number:11 day:19 month:10 pages:2455-2462 https://dx.doi.org/10.1007/s00542-014-2347-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 50.94 ASE AR 21 2014 11 19 10 2455-2462
spelling	10.1007/s00542-014-2347-9 doi (DE-627)SPR006831982 (SPR)s00542-014-2347-9-e DE-627 ger DE-627 rakwb eng 510 ASE 50.94 bkl Zarifi, Mohammad Hossein verfasserin aut Design and fabrication of a square shape bulk mode MEMS resonators 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper reports the design, simulation and fabrication of a micromechanical square shape resonators fabricated in single crystal silicon using a silicon on isolator wafer. Two different types of excitation for square shape resonators were used to stimulate Lame mode and square mode of resonance. The fabricated devices were studied under different bias voltage and in air at room temperature. The highest quality factor measured for the Lame mode resonator was 11,121 and for the square mode was 9,120 for square mode at 3.17 and 4.01 MHz, under the 80 V DC bias voltage across 1.5 μm actuation gap. It has been shown that by adding raggedy edge, the coupling capacitor has increased. Mass detection capabilities of these resonators were also investigated by adding an extra layer of gold. Frequency and quality factor variation was observed for each of the fabricated resonators. Adding a mass of 76 pgr leads to resonance frequency shift of 3.1 kHz in Lame mode structure. In this experiment quality factor drop was observed because of continues film layer of gold metal, with a thickness of 100 nm. Quality Factor (dpeaa)DE-He213 Mode Resonator (dpeaa)DE-He213 High Quality Factor (dpeaa)DE-He213 Resonance Frequency Shift (dpeaa)DE-He213 Resonance Plate (dpeaa)DE-He213 Daneshmand, Mojgan verfasserin aut Enthalten in Microsystem technologies Berlin : Springer, 1994 21(2014), 11 vom: 19. Okt., Seite 2455-2462 (DE-627)270128182 (DE-600)1476561-5 1432-1858 nnns volume:21 year:2014 number:11 day:19 month:10 pages:2455-2462 https://dx.doi.org/10.1007/s00542-014-2347-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 50.94 ASE AR 21 2014 11 19 10 2455-2462
allfields_unstemmed	10.1007/s00542-014-2347-9 doi (DE-627)SPR006831982 (SPR)s00542-014-2347-9-e DE-627 ger DE-627 rakwb eng 510 ASE 50.94 bkl Zarifi, Mohammad Hossein verfasserin aut Design and fabrication of a square shape bulk mode MEMS resonators 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper reports the design, simulation and fabrication of a micromechanical square shape resonators fabricated in single crystal silicon using a silicon on isolator wafer. Two different types of excitation for square shape resonators were used to stimulate Lame mode and square mode of resonance. The fabricated devices were studied under different bias voltage and in air at room temperature. The highest quality factor measured for the Lame mode resonator was 11,121 and for the square mode was 9,120 for square mode at 3.17 and 4.01 MHz, under the 80 V DC bias voltage across 1.5 μm actuation gap. It has been shown that by adding raggedy edge, the coupling capacitor has increased. Mass detection capabilities of these resonators were also investigated by adding an extra layer of gold. Frequency and quality factor variation was observed for each of the fabricated resonators. Adding a mass of 76 pgr leads to resonance frequency shift of 3.1 kHz in Lame mode structure. In this experiment quality factor drop was observed because of continues film layer of gold metal, with a thickness of 100 nm. Quality Factor (dpeaa)DE-He213 Mode Resonator (dpeaa)DE-He213 High Quality Factor (dpeaa)DE-He213 Resonance Frequency Shift (dpeaa)DE-He213 Resonance Plate (dpeaa)DE-He213 Daneshmand, Mojgan verfasserin aut Enthalten in Microsystem technologies Berlin : Springer, 1994 21(2014), 11 vom: 19. Okt., Seite 2455-2462 (DE-627)270128182 (DE-600)1476561-5 1432-1858 nnns volume:21 year:2014 number:11 day:19 month:10 pages:2455-2462 https://dx.doi.org/10.1007/s00542-014-2347-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 50.94 ASE AR 21 2014 11 19 10 2455-2462
allfieldsGer	10.1007/s00542-014-2347-9 doi (DE-627)SPR006831982 (SPR)s00542-014-2347-9-e DE-627 ger DE-627 rakwb eng 510 ASE 50.94 bkl Zarifi, Mohammad Hossein verfasserin aut Design and fabrication of a square shape bulk mode MEMS resonators 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper reports the design, simulation and fabrication of a micromechanical square shape resonators fabricated in single crystal silicon using a silicon on isolator wafer. Two different types of excitation for square shape resonators were used to stimulate Lame mode and square mode of resonance. The fabricated devices were studied under different bias voltage and in air at room temperature. The highest quality factor measured for the Lame mode resonator was 11,121 and for the square mode was 9,120 for square mode at 3.17 and 4.01 MHz, under the 80 V DC bias voltage across 1.5 μm actuation gap. It has been shown that by adding raggedy edge, the coupling capacitor has increased. Mass detection capabilities of these resonators were also investigated by adding an extra layer of gold. Frequency and quality factor variation was observed for each of the fabricated resonators. Adding a mass of 76 pgr leads to resonance frequency shift of 3.1 kHz in Lame mode structure. In this experiment quality factor drop was observed because of continues film layer of gold metal, with a thickness of 100 nm. Quality Factor (dpeaa)DE-He213 Mode Resonator (dpeaa)DE-He213 High Quality Factor (dpeaa)DE-He213 Resonance Frequency Shift (dpeaa)DE-He213 Resonance Plate (dpeaa)DE-He213 Daneshmand, Mojgan verfasserin aut Enthalten in Microsystem technologies Berlin : Springer, 1994 21(2014), 11 vom: 19. Okt., Seite 2455-2462 (DE-627)270128182 (DE-600)1476561-5 1432-1858 nnns volume:21 year:2014 number:11 day:19 month:10 pages:2455-2462 https://dx.doi.org/10.1007/s00542-014-2347-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 50.94 ASE AR 21 2014 11 19 10 2455-2462
allfieldsSound	10.1007/s00542-014-2347-9 doi (DE-627)SPR006831982 (SPR)s00542-014-2347-9-e DE-627 ger DE-627 rakwb eng 510 ASE 50.94 bkl Zarifi, Mohammad Hossein verfasserin aut Design and fabrication of a square shape bulk mode MEMS resonators 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper reports the design, simulation and fabrication of a micromechanical square shape resonators fabricated in single crystal silicon using a silicon on isolator wafer. Two different types of excitation for square shape resonators were used to stimulate Lame mode and square mode of resonance. The fabricated devices were studied under different bias voltage and in air at room temperature. The highest quality factor measured for the Lame mode resonator was 11,121 and for the square mode was 9,120 for square mode at 3.17 and 4.01 MHz, under the 80 V DC bias voltage across 1.5 μm actuation gap. It has been shown that by adding raggedy edge, the coupling capacitor has increased. Mass detection capabilities of these resonators were also investigated by adding an extra layer of gold. Frequency and quality factor variation was observed for each of the fabricated resonators. Adding a mass of 76 pgr leads to resonance frequency shift of 3.1 kHz in Lame mode structure. In this experiment quality factor drop was observed because of continues film layer of gold metal, with a thickness of 100 nm. Quality Factor (dpeaa)DE-He213 Mode Resonator (dpeaa)DE-He213 High Quality Factor (dpeaa)DE-He213 Resonance Frequency Shift (dpeaa)DE-He213 Resonance Plate (dpeaa)DE-He213 Daneshmand, Mojgan verfasserin aut Enthalten in Microsystem technologies Berlin : Springer, 1994 21(2014), 11 vom: 19. Okt., Seite 2455-2462 (DE-627)270128182 (DE-600)1476561-5 1432-1858 nnns volume:21 year:2014 number:11 day:19 month:10 pages:2455-2462 https://dx.doi.org/10.1007/s00542-014-2347-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 50.94 ASE AR 21 2014 11 19 10 2455-2462
language	English
source	Enthalten in Microsystem technologies 21(2014), 11 vom: 19. Okt., Seite 2455-2462 volume:21 year:2014 number:11 day:19 month:10 pages:2455-2462
sourceStr	Enthalten in Microsystem technologies 21(2014), 11 vom: 19. Okt., Seite 2455-2462 volume:21 year:2014 number:11 day:19 month:10 pages:2455-2462
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Quality Factor Mode Resonator High Quality Factor Resonance Frequency Shift Resonance Plate
dewey-raw	510
isfreeaccess_bool	false
container_title	Microsystem technologies
authorswithroles_txt_mv	Zarifi, Mohammad Hossein @@aut@@ Daneshmand, Mojgan @@aut@@
publishDateDaySort_date	2014-10-19T00:00:00Z
hierarchy_top_id	270128182
dewey-sort	3510
id	SPR006831982
language_de	englisch
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Two different types of excitation for square shape resonators were used to stimulate Lame mode and square mode of resonance. The fabricated devices were studied under different bias voltage and in air at room temperature. The highest quality factor measured for the Lame mode resonator was 11,121 and for the square mode was 9,120 for square mode at 3.17 and 4.01 MHz, under the 80 V DC bias voltage across 1.5 μm actuation gap. It has been shown that by adding raggedy edge, the coupling capacitor has increased. Mass detection capabilities of these resonators were also investigated by adding an extra layer of gold. Frequency and quality factor variation was observed for each of the fabricated resonators. Adding a mass of 76 pgr leads to resonance frequency shift of 3.1 kHz in Lame mode structure. 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author	Zarifi, Mohammad Hossein
spellingShingle	Zarifi, Mohammad Hossein ddc 510 bkl 50.94 misc Quality Factor misc Mode Resonator misc High Quality Factor misc Resonance Frequency Shift misc Resonance Plate Design and fabrication of a square shape bulk mode MEMS resonators
authorStr	Zarifi, Mohammad Hossein
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topic_title	510 ASE 50.94 bkl Design and fabrication of a square shape bulk mode MEMS resonators Quality Factor (dpeaa)DE-He213 Mode Resonator (dpeaa)DE-He213 High Quality Factor (dpeaa)DE-He213 Resonance Frequency Shift (dpeaa)DE-He213 Resonance Plate (dpeaa)DE-He213
topic	ddc 510 bkl 50.94 misc Quality Factor misc Mode Resonator misc High Quality Factor misc Resonance Frequency Shift misc Resonance Plate
topic_unstemmed	ddc 510 bkl 50.94 misc Quality Factor misc Mode Resonator misc High Quality Factor misc Resonance Frequency Shift misc Resonance Plate
topic_browse	ddc 510 bkl 50.94 misc Quality Factor misc Mode Resonator misc High Quality Factor misc Resonance Frequency Shift misc Resonance Plate
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
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title	Design and fabrication of a square shape bulk mode MEMS resonators
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title_full	Design and fabrication of a square shape bulk mode MEMS resonators
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author_browse	Zarifi, Mohammad Hossein Daneshmand, Mojgan
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title_sort	design and fabrication of a square shape bulk mode mems resonators
title_auth	Design and fabrication of a square shape bulk mode MEMS resonators
abstract	Abstract This paper reports the design, simulation and fabrication of a micromechanical square shape resonators fabricated in single crystal silicon using a silicon on isolator wafer. Two different types of excitation for square shape resonators were used to stimulate Lame mode and square mode of resonance. The fabricated devices were studied under different bias voltage and in air at room temperature. The highest quality factor measured for the Lame mode resonator was 11,121 and for the square mode was 9,120 for square mode at 3.17 and 4.01 MHz, under the 80 V DC bias voltage across 1.5 μm actuation gap. It has been shown that by adding raggedy edge, the coupling capacitor has increased. Mass detection capabilities of these resonators were also investigated by adding an extra layer of gold. Frequency and quality factor variation was observed for each of the fabricated resonators. Adding a mass of 76 pgr leads to resonance frequency shift of 3.1 kHz in Lame mode structure. In this experiment quality factor drop was observed because of continues film layer of gold metal, with a thickness of 100 nm.
abstractGer	Abstract This paper reports the design, simulation and fabrication of a micromechanical square shape resonators fabricated in single crystal silicon using a silicon on isolator wafer. Two different types of excitation for square shape resonators were used to stimulate Lame mode and square mode of resonance. The fabricated devices were studied under different bias voltage and in air at room temperature. The highest quality factor measured for the Lame mode resonator was 11,121 and for the square mode was 9,120 for square mode at 3.17 and 4.01 MHz, under the 80 V DC bias voltage across 1.5 μm actuation gap. It has been shown that by adding raggedy edge, the coupling capacitor has increased. Mass detection capabilities of these resonators were also investigated by adding an extra layer of gold. Frequency and quality factor variation was observed for each of the fabricated resonators. Adding a mass of 76 pgr leads to resonance frequency shift of 3.1 kHz in Lame mode structure. In this experiment quality factor drop was observed because of continues film layer of gold metal, with a thickness of 100 nm.
abstract_unstemmed	Abstract This paper reports the design, simulation and fabrication of a micromechanical square shape resonators fabricated in single crystal silicon using a silicon on isolator wafer. Two different types of excitation for square shape resonators were used to stimulate Lame mode and square mode of resonance. The fabricated devices were studied under different bias voltage and in air at room temperature. The highest quality factor measured for the Lame mode resonator was 11,121 and for the square mode was 9,120 for square mode at 3.17 and 4.01 MHz, under the 80 V DC bias voltage across 1.5 μm actuation gap. It has been shown that by adding raggedy edge, the coupling capacitor has increased. Mass detection capabilities of these resonators were also investigated by adding an extra layer of gold. Frequency and quality factor variation was observed for each of the fabricated resonators. Adding a mass of 76 pgr leads to resonance frequency shift of 3.1 kHz in Lame mode structure. In this experiment quality factor drop was observed because of continues film layer of gold metal, with a thickness of 100 nm.
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container_issue	11
title_short	Design and fabrication of a square shape bulk mode MEMS resonators
url	https://dx.doi.org/10.1007/s00542-014-2347-9
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author2	Daneshmand, Mojgan
author2Str	Daneshmand, Mojgan
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doi_str	10.1007/s00542-014-2347-9
up_date	2024-07-04T00:52:27.737Z
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Design and fabrication of a square shape bulk mode MEMS resonators

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