Facile electrosynthesis and thermoelectric performance of electroactive free-standing polythieno[3,2-b]thiophene films
Abstract Polythieno[3,2-b]thiophene (PTT) was electrosynthesized by facile anodic oxidation of thieno[3,2-b]thiophene (TT) in three systems: boron trifluoride diethyl etherate (BFEE), acetonitrile (ACN), and dichloromethane solutions. The onset oxidation potential of TT in BFEE was determined to be...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Yue, Ruirui [verfasserIn] Chen, Shuai [verfasserIn] Lu, Baoyang [verfasserIn] Liu, Congcong [verfasserIn] Xu, Jingkun [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2010 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of solid state electrochemistry - Berlin : Springer, 1997, 15(2010), 3 vom: 18. Juni, Seite 539-548 |
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| Übergeordnetes Werk: |
volume:15 ; year:2010 ; number:3 ; day:18 ; month:06 ; pages:539-548 |
| Links: |
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| DOI / URN: |
10.1007/s10008-010-1095-8 |
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| Katalog-ID: |
SPR007966482 |
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| 520 | |a Abstract Polythieno[3,2-b]thiophene (PTT) was electrosynthesized by facile anodic oxidation of thieno[3,2-b]thiophene (TT) in three systems: boron trifluoride diethyl etherate (BFEE), acetonitrile (ACN), and dichloromethane solutions. The onset oxidation potential of TT in BFEE was determined to be 0.62 V vs. Ag/AgCl, which was much lower than those in ACN and dichloromethane solutions. PTT films exhibited excellent electrochemical property, high thermal stability, good redox activity, and stability. Free-standing PTT films with good mechanical property can be obtained from BFEE solution, whose structure and morphology were characterized by FT-IR, UV–visible spectra, and scanning electron microscopy. With an electrical conductivity of 1.5 S $ cm^{−1} $ and a Seebeck coefficient of 85 µV $ K^{−1} $ at 306 K, the as-prepared free-standing PTT films showed a certain thermoelectric property. The dimensionless figure-of-merit of PTT films was estimated to be 2.3 × $ 10^{−3} $ at 306 K, which was much higher than those of some organic thermoelectric materials reported previously. All these results indicated that PTT films may have potential applications in the thermoelectric field. | ||
| 650 | 4 | |a Conducting polymers |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Thieno[3,2- |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a ]thiophene |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Electrochemical polymerization |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Thermoelectric property |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Polythiophene |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Chen, Shuai |e verfasserin |4 aut | |
| 700 | 1 | |a Lu, Baoyang |e verfasserin |4 aut | |
| 700 | 1 | |a Liu, Congcong |e verfasserin |4 aut | |
| 700 | 1 | |a Xu, Jingkun |e verfasserin |4 aut | |
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10.1007/s10008-010-1095-8 doi (DE-627)SPR007966482 (SPR)s10008-010-1095-8-e DE-627 ger DE-627 rakwb eng 540 ASE 35.14 bkl 35.90 bkl Yue, Ruirui verfasserin aut Facile electrosynthesis and thermoelectric performance of electroactive free-standing polythieno[3,2-b]thiophene films 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Polythieno[3,2-b]thiophene (PTT) was electrosynthesized by facile anodic oxidation of thieno[3,2-b]thiophene (TT) in three systems: boron trifluoride diethyl etherate (BFEE), acetonitrile (ACN), and dichloromethane solutions. The onset oxidation potential of TT in BFEE was determined to be 0.62 V vs. Ag/AgCl, which was much lower than those in ACN and dichloromethane solutions. PTT films exhibited excellent electrochemical property, high thermal stability, good redox activity, and stability. Free-standing PTT films with good mechanical property can be obtained from BFEE solution, whose structure and morphology were characterized by FT-IR, UV–visible spectra, and scanning electron microscopy. With an electrical conductivity of 1.5 S $ cm^{−1} $ and a Seebeck coefficient of 85 µV $ K^{−1} $ at 306 K, the as-prepared free-standing PTT films showed a certain thermoelectric property. The dimensionless figure-of-merit of PTT films was estimated to be 2.3 × $ 10^{−3} $ at 306 K, which was much higher than those of some organic thermoelectric materials reported previously. All these results indicated that PTT films may have potential applications in the thermoelectric field. Conducting polymers (dpeaa)DE-He213 Thieno[3,2- (dpeaa)DE-He213 ]thiophene (dpeaa)DE-He213 Electrochemical polymerization (dpeaa)DE-He213 Thermoelectric property (dpeaa)DE-He213 Polythiophene (dpeaa)DE-He213 Chen, Shuai verfasserin aut Lu, Baoyang verfasserin aut Liu, Congcong verfasserin aut Xu, Jingkun verfasserin aut Enthalten in Journal of solid state electrochemistry Berlin : Springer, 1997 15(2010), 3 vom: 18. Juni, Seite 539-548 (DE-627)271175400 (DE-600)1478940-1 1433-0768 nnns volume:15 year:2010 number:3 day:18 month:06 pages:539-548 https://dx.doi.org/10.1007/s10008-010-1095-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.14 ASE 35.90 ASE AR 15 2010 3 18 06 539-548 |
| spelling |
10.1007/s10008-010-1095-8 doi (DE-627)SPR007966482 (SPR)s10008-010-1095-8-e DE-627 ger DE-627 rakwb eng 540 ASE 35.14 bkl 35.90 bkl Yue, Ruirui verfasserin aut Facile electrosynthesis and thermoelectric performance of electroactive free-standing polythieno[3,2-b]thiophene films 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Polythieno[3,2-b]thiophene (PTT) was electrosynthesized by facile anodic oxidation of thieno[3,2-b]thiophene (TT) in three systems: boron trifluoride diethyl etherate (BFEE), acetonitrile (ACN), and dichloromethane solutions. The onset oxidation potential of TT in BFEE was determined to be 0.62 V vs. Ag/AgCl, which was much lower than those in ACN and dichloromethane solutions. PTT films exhibited excellent electrochemical property, high thermal stability, good redox activity, and stability. Free-standing PTT films with good mechanical property can be obtained from BFEE solution, whose structure and morphology were characterized by FT-IR, UV–visible spectra, and scanning electron microscopy. With an electrical conductivity of 1.5 S $ cm^{−1} $ and a Seebeck coefficient of 85 µV $ K^{−1} $ at 306 K, the as-prepared free-standing PTT films showed a certain thermoelectric property. The dimensionless figure-of-merit of PTT films was estimated to be 2.3 × $ 10^{−3} $ at 306 K, which was much higher than those of some organic thermoelectric materials reported previously. All these results indicated that PTT films may have potential applications in the thermoelectric field. Conducting polymers (dpeaa)DE-He213 Thieno[3,2- (dpeaa)DE-He213 ]thiophene (dpeaa)DE-He213 Electrochemical polymerization (dpeaa)DE-He213 Thermoelectric property (dpeaa)DE-He213 Polythiophene (dpeaa)DE-He213 Chen, Shuai verfasserin aut Lu, Baoyang verfasserin aut Liu, Congcong verfasserin aut Xu, Jingkun verfasserin aut Enthalten in Journal of solid state electrochemistry Berlin : Springer, 1997 15(2010), 3 vom: 18. Juni, Seite 539-548 (DE-627)271175400 (DE-600)1478940-1 1433-0768 nnns volume:15 year:2010 number:3 day:18 month:06 pages:539-548 https://dx.doi.org/10.1007/s10008-010-1095-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.14 ASE 35.90 ASE AR 15 2010 3 18 06 539-548 |
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10.1007/s10008-010-1095-8 doi (DE-627)SPR007966482 (SPR)s10008-010-1095-8-e DE-627 ger DE-627 rakwb eng 540 ASE 35.14 bkl 35.90 bkl Yue, Ruirui verfasserin aut Facile electrosynthesis and thermoelectric performance of electroactive free-standing polythieno[3,2-b]thiophene films 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Polythieno[3,2-b]thiophene (PTT) was electrosynthesized by facile anodic oxidation of thieno[3,2-b]thiophene (TT) in three systems: boron trifluoride diethyl etherate (BFEE), acetonitrile (ACN), and dichloromethane solutions. The onset oxidation potential of TT in BFEE was determined to be 0.62 V vs. Ag/AgCl, which was much lower than those in ACN and dichloromethane solutions. PTT films exhibited excellent electrochemical property, high thermal stability, good redox activity, and stability. Free-standing PTT films with good mechanical property can be obtained from BFEE solution, whose structure and morphology were characterized by FT-IR, UV–visible spectra, and scanning electron microscopy. With an electrical conductivity of 1.5 S $ cm^{−1} $ and a Seebeck coefficient of 85 µV $ K^{−1} $ at 306 K, the as-prepared free-standing PTT films showed a certain thermoelectric property. The dimensionless figure-of-merit of PTT films was estimated to be 2.3 × $ 10^{−3} $ at 306 K, which was much higher than those of some organic thermoelectric materials reported previously. All these results indicated that PTT films may have potential applications in the thermoelectric field. Conducting polymers (dpeaa)DE-He213 Thieno[3,2- (dpeaa)DE-He213 ]thiophene (dpeaa)DE-He213 Electrochemical polymerization (dpeaa)DE-He213 Thermoelectric property (dpeaa)DE-He213 Polythiophene (dpeaa)DE-He213 Chen, Shuai verfasserin aut Lu, Baoyang verfasserin aut Liu, Congcong verfasserin aut Xu, Jingkun verfasserin aut Enthalten in Journal of solid state electrochemistry Berlin : Springer, 1997 15(2010), 3 vom: 18. Juni, Seite 539-548 (DE-627)271175400 (DE-600)1478940-1 1433-0768 nnns volume:15 year:2010 number:3 day:18 month:06 pages:539-548 https://dx.doi.org/10.1007/s10008-010-1095-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.14 ASE 35.90 ASE AR 15 2010 3 18 06 539-548 |
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10.1007/s10008-010-1095-8 doi (DE-627)SPR007966482 (SPR)s10008-010-1095-8-e DE-627 ger DE-627 rakwb eng 540 ASE 35.14 bkl 35.90 bkl Yue, Ruirui verfasserin aut Facile electrosynthesis and thermoelectric performance of electroactive free-standing polythieno[3,2-b]thiophene films 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Polythieno[3,2-b]thiophene (PTT) was electrosynthesized by facile anodic oxidation of thieno[3,2-b]thiophene (TT) in three systems: boron trifluoride diethyl etherate (BFEE), acetonitrile (ACN), and dichloromethane solutions. The onset oxidation potential of TT in BFEE was determined to be 0.62 V vs. Ag/AgCl, which was much lower than those in ACN and dichloromethane solutions. PTT films exhibited excellent electrochemical property, high thermal stability, good redox activity, and stability. Free-standing PTT films with good mechanical property can be obtained from BFEE solution, whose structure and morphology were characterized by FT-IR, UV–visible spectra, and scanning electron microscopy. With an electrical conductivity of 1.5 S $ cm^{−1} $ and a Seebeck coefficient of 85 µV $ K^{−1} $ at 306 K, the as-prepared free-standing PTT films showed a certain thermoelectric property. The dimensionless figure-of-merit of PTT films was estimated to be 2.3 × $ 10^{−3} $ at 306 K, which was much higher than those of some organic thermoelectric materials reported previously. All these results indicated that PTT films may have potential applications in the thermoelectric field. Conducting polymers (dpeaa)DE-He213 Thieno[3,2- (dpeaa)DE-He213 ]thiophene (dpeaa)DE-He213 Electrochemical polymerization (dpeaa)DE-He213 Thermoelectric property (dpeaa)DE-He213 Polythiophene (dpeaa)DE-He213 Chen, Shuai verfasserin aut Lu, Baoyang verfasserin aut Liu, Congcong verfasserin aut Xu, Jingkun verfasserin aut Enthalten in Journal of solid state electrochemistry Berlin : Springer, 1997 15(2010), 3 vom: 18. Juni, Seite 539-548 (DE-627)271175400 (DE-600)1478940-1 1433-0768 nnns volume:15 year:2010 number:3 day:18 month:06 pages:539-548 https://dx.doi.org/10.1007/s10008-010-1095-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.14 ASE 35.90 ASE AR 15 2010 3 18 06 539-548 |
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10.1007/s10008-010-1095-8 doi (DE-627)SPR007966482 (SPR)s10008-010-1095-8-e DE-627 ger DE-627 rakwb eng 540 ASE 35.14 bkl 35.90 bkl Yue, Ruirui verfasserin aut Facile electrosynthesis and thermoelectric performance of electroactive free-standing polythieno[3,2-b]thiophene films 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Polythieno[3,2-b]thiophene (PTT) was electrosynthesized by facile anodic oxidation of thieno[3,2-b]thiophene (TT) in three systems: boron trifluoride diethyl etherate (BFEE), acetonitrile (ACN), and dichloromethane solutions. The onset oxidation potential of TT in BFEE was determined to be 0.62 V vs. Ag/AgCl, which was much lower than those in ACN and dichloromethane solutions. PTT films exhibited excellent electrochemical property, high thermal stability, good redox activity, and stability. Free-standing PTT films with good mechanical property can be obtained from BFEE solution, whose structure and morphology were characterized by FT-IR, UV–visible spectra, and scanning electron microscopy. With an electrical conductivity of 1.5 S $ cm^{−1} $ and a Seebeck coefficient of 85 µV $ K^{−1} $ at 306 K, the as-prepared free-standing PTT films showed a certain thermoelectric property. The dimensionless figure-of-merit of PTT films was estimated to be 2.3 × $ 10^{−3} $ at 306 K, which was much higher than those of some organic thermoelectric materials reported previously. All these results indicated that PTT films may have potential applications in the thermoelectric field. Conducting polymers (dpeaa)DE-He213 Thieno[3,2- (dpeaa)DE-He213 ]thiophene (dpeaa)DE-He213 Electrochemical polymerization (dpeaa)DE-He213 Thermoelectric property (dpeaa)DE-He213 Polythiophene (dpeaa)DE-He213 Chen, Shuai verfasserin aut Lu, Baoyang verfasserin aut Liu, Congcong verfasserin aut Xu, Jingkun verfasserin aut Enthalten in Journal of solid state electrochemistry Berlin : Springer, 1997 15(2010), 3 vom: 18. Juni, Seite 539-548 (DE-627)271175400 (DE-600)1478940-1 1433-0768 nnns volume:15 year:2010 number:3 day:18 month:06 pages:539-548 https://dx.doi.org/10.1007/s10008-010-1095-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.14 ASE 35.90 ASE AR 15 2010 3 18 06 539-548 |
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Enthalten in Journal of solid state electrochemistry 15(2010), 3 vom: 18. Juni, Seite 539-548 volume:15 year:2010 number:3 day:18 month:06 pages:539-548 |
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Enthalten in Journal of solid state electrochemistry 15(2010), 3 vom: 18. Juni, Seite 539-548 volume:15 year:2010 number:3 day:18 month:06 pages:539-548 |
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Conducting polymers Thieno[3,2- ]thiophene Electrochemical polymerization Thermoelectric property Polythiophene |
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Journal of solid state electrochemistry |
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Yue, Ruirui @@aut@@ Chen, Shuai @@aut@@ Lu, Baoyang @@aut@@ Liu, Congcong @@aut@@ Xu, Jingkun @@aut@@ |
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The onset oxidation potential of TT in BFEE was determined to be 0.62 V vs. Ag/AgCl, which was much lower than those in ACN and dichloromethane solutions. PTT films exhibited excellent electrochemical property, high thermal stability, good redox activity, and stability. Free-standing PTT films with good mechanical property can be obtained from BFEE solution, whose structure and morphology were characterized by FT-IR, UV–visible spectra, and scanning electron microscopy. With an electrical conductivity of 1.5 S $ cm^{−1} $ and a Seebeck coefficient of 85 µV $ K^{−1} $ at 306 K, the as-prepared free-standing PTT films showed a certain thermoelectric property. The dimensionless figure-of-merit of PTT films was estimated to be 2.3 × $ 10^{−3} $ at 306 K, which was much higher than those of some organic thermoelectric materials reported previously. All these results indicated that PTT films may have potential applications in the thermoelectric field.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Conducting polymers</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Thieno[3,2-</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">]thiophene</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electrochemical polymerization</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Thermoelectric property</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Polythiophene</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Chen, Shuai</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lu, Baoyang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Liu, Congcong</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Xu, Jingkun</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of solid state electrochemistry</subfield><subfield code="d">Berlin : Springer, 1997</subfield><subfield code="g">15(2010), 3 vom: 18. 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Yue, Ruirui |
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Yue, Ruirui ddc 540 bkl 35.14 bkl 35.90 misc Conducting polymers misc Thieno[3,2- misc ]thiophene misc Electrochemical polymerization misc Thermoelectric property misc Polythiophene Facile electrosynthesis and thermoelectric performance of electroactive free-standing polythieno[3,2-b]thiophene films |
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540 ASE 35.14 bkl 35.90 bkl Facile electrosynthesis and thermoelectric performance of electroactive free-standing polythieno[3,2-b]thiophene films Conducting polymers (dpeaa)DE-He213 Thieno[3,2- (dpeaa)DE-He213 ]thiophene (dpeaa)DE-He213 Electrochemical polymerization (dpeaa)DE-He213 Thermoelectric property (dpeaa)DE-He213 Polythiophene (dpeaa)DE-He213 |
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ddc 540 bkl 35.14 bkl 35.90 misc Conducting polymers misc Thieno[3,2- misc ]thiophene misc Electrochemical polymerization misc Thermoelectric property misc Polythiophene |
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ddc 540 bkl 35.14 bkl 35.90 misc Conducting polymers misc Thieno[3,2- misc ]thiophene misc Electrochemical polymerization misc Thermoelectric property misc Polythiophene |
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Facile electrosynthesis and thermoelectric performance of electroactive free-standing polythieno[3,2-b]thiophene films |
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Facile electrosynthesis and thermoelectric performance of electroactive free-standing polythieno[3,2-b]thiophene films |
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Yue, Ruirui Chen, Shuai Lu, Baoyang Liu, Congcong Xu, Jingkun |
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Elektronische Aufsätze |
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Yue, Ruirui |
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facile electrosynthesis and thermoelectric performance of electroactive free-standing polythieno[3,2-b]thiophene films |
| title_auth |
Facile electrosynthesis and thermoelectric performance of electroactive free-standing polythieno[3,2-b]thiophene films |
| abstract |
Abstract Polythieno[3,2-b]thiophene (PTT) was electrosynthesized by facile anodic oxidation of thieno[3,2-b]thiophene (TT) in three systems: boron trifluoride diethyl etherate (BFEE), acetonitrile (ACN), and dichloromethane solutions. The onset oxidation potential of TT in BFEE was determined to be 0.62 V vs. Ag/AgCl, which was much lower than those in ACN and dichloromethane solutions. PTT films exhibited excellent electrochemical property, high thermal stability, good redox activity, and stability. Free-standing PTT films with good mechanical property can be obtained from BFEE solution, whose structure and morphology were characterized by FT-IR, UV–visible spectra, and scanning electron microscopy. With an electrical conductivity of 1.5 S $ cm^{−1} $ and a Seebeck coefficient of 85 µV $ K^{−1} $ at 306 K, the as-prepared free-standing PTT films showed a certain thermoelectric property. The dimensionless figure-of-merit of PTT films was estimated to be 2.3 × $ 10^{−3} $ at 306 K, which was much higher than those of some organic thermoelectric materials reported previously. All these results indicated that PTT films may have potential applications in the thermoelectric field. |
| abstractGer |
Abstract Polythieno[3,2-b]thiophene (PTT) was electrosynthesized by facile anodic oxidation of thieno[3,2-b]thiophene (TT) in three systems: boron trifluoride diethyl etherate (BFEE), acetonitrile (ACN), and dichloromethane solutions. The onset oxidation potential of TT in BFEE was determined to be 0.62 V vs. Ag/AgCl, which was much lower than those in ACN and dichloromethane solutions. PTT films exhibited excellent electrochemical property, high thermal stability, good redox activity, and stability. Free-standing PTT films with good mechanical property can be obtained from BFEE solution, whose structure and morphology were characterized by FT-IR, UV–visible spectra, and scanning electron microscopy. With an electrical conductivity of 1.5 S $ cm^{−1} $ and a Seebeck coefficient of 85 µV $ K^{−1} $ at 306 K, the as-prepared free-standing PTT films showed a certain thermoelectric property. The dimensionless figure-of-merit of PTT films was estimated to be 2.3 × $ 10^{−3} $ at 306 K, which was much higher than those of some organic thermoelectric materials reported previously. All these results indicated that PTT films may have potential applications in the thermoelectric field. |
| abstract_unstemmed |
Abstract Polythieno[3,2-b]thiophene (PTT) was electrosynthesized by facile anodic oxidation of thieno[3,2-b]thiophene (TT) in three systems: boron trifluoride diethyl etherate (BFEE), acetonitrile (ACN), and dichloromethane solutions. The onset oxidation potential of TT in BFEE was determined to be 0.62 V vs. Ag/AgCl, which was much lower than those in ACN and dichloromethane solutions. PTT films exhibited excellent electrochemical property, high thermal stability, good redox activity, and stability. Free-standing PTT films with good mechanical property can be obtained from BFEE solution, whose structure and morphology were characterized by FT-IR, UV–visible spectra, and scanning electron microscopy. With an electrical conductivity of 1.5 S $ cm^{−1} $ and a Seebeck coefficient of 85 µV $ K^{−1} $ at 306 K, the as-prepared free-standing PTT films showed a certain thermoelectric property. The dimensionless figure-of-merit of PTT films was estimated to be 2.3 × $ 10^{−3} $ at 306 K, which was much higher than those of some organic thermoelectric materials reported previously. All these results indicated that PTT films may have potential applications in the thermoelectric field. |
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3 |
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Facile electrosynthesis and thermoelectric performance of electroactive free-standing polythieno[3,2-b]thiophene films |
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Chen, Shuai Lu, Baoyang Liu, Congcong Xu, Jingkun |
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| score |
7.3995466 |