Annealing temperature–dependent electronic properties in hydrothermal $ TiO_{2} $ nanorod arrays
Abstract Single-crystalline semiconductor nanostructures of metal oxides as-synthesized by solution methods generally demand high-temperature treatment, so as to achieve enhanced performance in energy and (opto)electronic devices. However, the mechanism remains unclear. In this work, we have monitor...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Zhong, Peng [verfasserIn] Chen, Xinpeng [verfasserIn] Jia, Qiaoying [verfasserIn] Zhu, Gangqiang [verfasserIn] Lei, Yimin [verfasserIn] Xi, He [verfasserIn] Xie, Yong [verfasserIn] Zhou, Xuejiao [verfasserIn] Ma, Xiaohua [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2017 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of solid state electrochemistry - Berlin : Springer, 1997, 22(2017), 2 vom: 08. Okt., Seite 567-580 |
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| Übergeordnetes Werk: |
volume:22 ; year:2017 ; number:2 ; day:08 ; month:10 ; pages:567-580 |
| Links: |
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| DOI / URN: |
10.1007/s10008-017-3786-x |
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| Katalog-ID: |
SPR007994389 |
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| 520 | |a Abstract Single-crystalline semiconductor nanostructures of metal oxides as-synthesized by solution methods generally demand high-temperature treatment, so as to achieve enhanced performance in energy and (opto)electronic devices. However, the mechanism remains unclear. In this work, we have monitored charge dynamic properties of hydrothermal $ TiO_{2} $ nanorod arrays (NRAs) with their annealing temperatures in model dye-sensitized solar cells. Results indicate that electron collection efficiencies are in a trend of 400 > 530 > 80 > 250 °C due to a synergistic effect of electron transport and recombination, which are consistent with the device performance variations. We have further built up the relations between surface properties and charge dynamics of $ TiO_{2} $ NRAs with annealing temperatures for the first time. Results show that at low temperatures (≤ 250 °C), residual modifiers (i.e., $ Cl^{−} $ and nano-sized carbon) anchored on $ TiO_{2} $ surface serve as recombination centers, which inhibit the electron collection; high-temperature annealing renders a clean $ TiO_{2} $ surface, enabling a substantially enhanced electron collection efficiency as high as ~ 95%. This mechanistic study would promote more applications of this class of cheap nanomaterials in a variety of fields such as solar cells, photocatalysis, supercapacitors, and batteries. | ||
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| 650 | 4 | |a nanorod array |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Solar cell |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Annealing |7 (dpeaa)DE-He213 | |
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| 700 | 1 | |a Jia, Qiaoying |e verfasserin |4 aut | |
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| 700 | 1 | |a Xie, Yong |e verfasserin |4 aut | |
| 700 | 1 | |a Zhou, Xuejiao |e verfasserin |4 aut | |
| 700 | 1 | |a Ma, Xiaohua |e verfasserin |4 aut | |
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10.1007/s10008-017-3786-x doi (DE-627)SPR007994389 (SPR)s10008-017-3786-x-e DE-627 ger DE-627 rakwb eng 540 ASE 35.14 bkl 35.90 bkl Zhong, Peng verfasserin aut Annealing temperature–dependent electronic properties in hydrothermal $ TiO_{2} $ nanorod arrays 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Single-crystalline semiconductor nanostructures of metal oxides as-synthesized by solution methods generally demand high-temperature treatment, so as to achieve enhanced performance in energy and (opto)electronic devices. However, the mechanism remains unclear. In this work, we have monitored charge dynamic properties of hydrothermal $ TiO_{2} $ nanorod arrays (NRAs) with their annealing temperatures in model dye-sensitized solar cells. Results indicate that electron collection efficiencies are in a trend of 400 > 530 > 80 > 250 °C due to a synergistic effect of electron transport and recombination, which are consistent with the device performance variations. We have further built up the relations between surface properties and charge dynamics of $ TiO_{2} $ NRAs with annealing temperatures for the first time. Results show that at low temperatures (≤ 250 °C), residual modifiers (i.e., $ Cl^{−} $ and nano-sized carbon) anchored on $ TiO_{2} $ surface serve as recombination centers, which inhibit the electron collection; high-temperature annealing renders a clean $ TiO_{2} $ surface, enabling a substantially enhanced electron collection efficiency as high as ~ 95%. This mechanistic study would promote more applications of this class of cheap nanomaterials in a variety of fields such as solar cells, photocatalysis, supercapacitors, and batteries. Charge dynamics (dpeaa)DE-He213 Electron transport (dpeaa)DE-He213 Recombination (dpeaa)DE-He213 TiO (dpeaa)DE-He213 nanorod array (dpeaa)DE-He213 Solar cell (dpeaa)DE-He213 Annealing (dpeaa)DE-He213 Chen, Xinpeng verfasserin aut Jia, Qiaoying verfasserin aut Zhu, Gangqiang verfasserin aut Lei, Yimin verfasserin aut Xi, He verfasserin aut Xie, Yong verfasserin aut Zhou, Xuejiao verfasserin aut Ma, Xiaohua verfasserin aut Enthalten in Journal of solid state electrochemistry Berlin : Springer, 1997 22(2017), 2 vom: 08. Okt., Seite 567-580 (DE-627)271175400 (DE-600)1478940-1 1433-0768 nnns volume:22 year:2017 number:2 day:08 month:10 pages:567-580 https://dx.doi.org/10.1007/s10008-017-3786-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.14 ASE 35.90 ASE AR 22 2017 2 08 10 567-580 |
| spelling |
10.1007/s10008-017-3786-x doi (DE-627)SPR007994389 (SPR)s10008-017-3786-x-e DE-627 ger DE-627 rakwb eng 540 ASE 35.14 bkl 35.90 bkl Zhong, Peng verfasserin aut Annealing temperature–dependent electronic properties in hydrothermal $ TiO_{2} $ nanorod arrays 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Single-crystalline semiconductor nanostructures of metal oxides as-synthesized by solution methods generally demand high-temperature treatment, so as to achieve enhanced performance in energy and (opto)electronic devices. However, the mechanism remains unclear. In this work, we have monitored charge dynamic properties of hydrothermal $ TiO_{2} $ nanorod arrays (NRAs) with their annealing temperatures in model dye-sensitized solar cells. Results indicate that electron collection efficiencies are in a trend of 400 > 530 > 80 > 250 °C due to a synergistic effect of electron transport and recombination, which are consistent with the device performance variations. We have further built up the relations between surface properties and charge dynamics of $ TiO_{2} $ NRAs with annealing temperatures for the first time. Results show that at low temperatures (≤ 250 °C), residual modifiers (i.e., $ Cl^{−} $ and nano-sized carbon) anchored on $ TiO_{2} $ surface serve as recombination centers, which inhibit the electron collection; high-temperature annealing renders a clean $ TiO_{2} $ surface, enabling a substantially enhanced electron collection efficiency as high as ~ 95%. This mechanistic study would promote more applications of this class of cheap nanomaterials in a variety of fields such as solar cells, photocatalysis, supercapacitors, and batteries. Charge dynamics (dpeaa)DE-He213 Electron transport (dpeaa)DE-He213 Recombination (dpeaa)DE-He213 TiO (dpeaa)DE-He213 nanorod array (dpeaa)DE-He213 Solar cell (dpeaa)DE-He213 Annealing (dpeaa)DE-He213 Chen, Xinpeng verfasserin aut Jia, Qiaoying verfasserin aut Zhu, Gangqiang verfasserin aut Lei, Yimin verfasserin aut Xi, He verfasserin aut Xie, Yong verfasserin aut Zhou, Xuejiao verfasserin aut Ma, Xiaohua verfasserin aut Enthalten in Journal of solid state electrochemistry Berlin : Springer, 1997 22(2017), 2 vom: 08. Okt., Seite 567-580 (DE-627)271175400 (DE-600)1478940-1 1433-0768 nnns volume:22 year:2017 number:2 day:08 month:10 pages:567-580 https://dx.doi.org/10.1007/s10008-017-3786-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.14 ASE 35.90 ASE AR 22 2017 2 08 10 567-580 |
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10.1007/s10008-017-3786-x doi (DE-627)SPR007994389 (SPR)s10008-017-3786-x-e DE-627 ger DE-627 rakwb eng 540 ASE 35.14 bkl 35.90 bkl Zhong, Peng verfasserin aut Annealing temperature–dependent electronic properties in hydrothermal $ TiO_{2} $ nanorod arrays 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Single-crystalline semiconductor nanostructures of metal oxides as-synthesized by solution methods generally demand high-temperature treatment, so as to achieve enhanced performance in energy and (opto)electronic devices. However, the mechanism remains unclear. In this work, we have monitored charge dynamic properties of hydrothermal $ TiO_{2} $ nanorod arrays (NRAs) with their annealing temperatures in model dye-sensitized solar cells. Results indicate that electron collection efficiencies are in a trend of 400 > 530 > 80 > 250 °C due to a synergistic effect of electron transport and recombination, which are consistent with the device performance variations. We have further built up the relations between surface properties and charge dynamics of $ TiO_{2} $ NRAs with annealing temperatures for the first time. Results show that at low temperatures (≤ 250 °C), residual modifiers (i.e., $ Cl^{−} $ and nano-sized carbon) anchored on $ TiO_{2} $ surface serve as recombination centers, which inhibit the electron collection; high-temperature annealing renders a clean $ TiO_{2} $ surface, enabling a substantially enhanced electron collection efficiency as high as ~ 95%. This mechanistic study would promote more applications of this class of cheap nanomaterials in a variety of fields such as solar cells, photocatalysis, supercapacitors, and batteries. Charge dynamics (dpeaa)DE-He213 Electron transport (dpeaa)DE-He213 Recombination (dpeaa)DE-He213 TiO (dpeaa)DE-He213 nanorod array (dpeaa)DE-He213 Solar cell (dpeaa)DE-He213 Annealing (dpeaa)DE-He213 Chen, Xinpeng verfasserin aut Jia, Qiaoying verfasserin aut Zhu, Gangqiang verfasserin aut Lei, Yimin verfasserin aut Xi, He verfasserin aut Xie, Yong verfasserin aut Zhou, Xuejiao verfasserin aut Ma, Xiaohua verfasserin aut Enthalten in Journal of solid state electrochemistry Berlin : Springer, 1997 22(2017), 2 vom: 08. Okt., Seite 567-580 (DE-627)271175400 (DE-600)1478940-1 1433-0768 nnns volume:22 year:2017 number:2 day:08 month:10 pages:567-580 https://dx.doi.org/10.1007/s10008-017-3786-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.14 ASE 35.90 ASE AR 22 2017 2 08 10 567-580 |
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10.1007/s10008-017-3786-x doi (DE-627)SPR007994389 (SPR)s10008-017-3786-x-e DE-627 ger DE-627 rakwb eng 540 ASE 35.14 bkl 35.90 bkl Zhong, Peng verfasserin aut Annealing temperature–dependent electronic properties in hydrothermal $ TiO_{2} $ nanorod arrays 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Single-crystalline semiconductor nanostructures of metal oxides as-synthesized by solution methods generally demand high-temperature treatment, so as to achieve enhanced performance in energy and (opto)electronic devices. However, the mechanism remains unclear. In this work, we have monitored charge dynamic properties of hydrothermal $ TiO_{2} $ nanorod arrays (NRAs) with their annealing temperatures in model dye-sensitized solar cells. Results indicate that electron collection efficiencies are in a trend of 400 > 530 > 80 > 250 °C due to a synergistic effect of electron transport and recombination, which are consistent with the device performance variations. We have further built up the relations between surface properties and charge dynamics of $ TiO_{2} $ NRAs with annealing temperatures for the first time. Results show that at low temperatures (≤ 250 °C), residual modifiers (i.e., $ Cl^{−} $ and nano-sized carbon) anchored on $ TiO_{2} $ surface serve as recombination centers, which inhibit the electron collection; high-temperature annealing renders a clean $ TiO_{2} $ surface, enabling a substantially enhanced electron collection efficiency as high as ~ 95%. This mechanistic study would promote more applications of this class of cheap nanomaterials in a variety of fields such as solar cells, photocatalysis, supercapacitors, and batteries. Charge dynamics (dpeaa)DE-He213 Electron transport (dpeaa)DE-He213 Recombination (dpeaa)DE-He213 TiO (dpeaa)DE-He213 nanorod array (dpeaa)DE-He213 Solar cell (dpeaa)DE-He213 Annealing (dpeaa)DE-He213 Chen, Xinpeng verfasserin aut Jia, Qiaoying verfasserin aut Zhu, Gangqiang verfasserin aut Lei, Yimin verfasserin aut Xi, He verfasserin aut Xie, Yong verfasserin aut Zhou, Xuejiao verfasserin aut Ma, Xiaohua verfasserin aut Enthalten in Journal of solid state electrochemistry Berlin : Springer, 1997 22(2017), 2 vom: 08. Okt., Seite 567-580 (DE-627)271175400 (DE-600)1478940-1 1433-0768 nnns volume:22 year:2017 number:2 day:08 month:10 pages:567-580 https://dx.doi.org/10.1007/s10008-017-3786-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.14 ASE 35.90 ASE AR 22 2017 2 08 10 567-580 |
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10.1007/s10008-017-3786-x doi (DE-627)SPR007994389 (SPR)s10008-017-3786-x-e DE-627 ger DE-627 rakwb eng 540 ASE 35.14 bkl 35.90 bkl Zhong, Peng verfasserin aut Annealing temperature–dependent electronic properties in hydrothermal $ TiO_{2} $ nanorod arrays 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Single-crystalline semiconductor nanostructures of metal oxides as-synthesized by solution methods generally demand high-temperature treatment, so as to achieve enhanced performance in energy and (opto)electronic devices. However, the mechanism remains unclear. In this work, we have monitored charge dynamic properties of hydrothermal $ TiO_{2} $ nanorod arrays (NRAs) with their annealing temperatures in model dye-sensitized solar cells. Results indicate that electron collection efficiencies are in a trend of 400 > 530 > 80 > 250 °C due to a synergistic effect of electron transport and recombination, which are consistent with the device performance variations. We have further built up the relations between surface properties and charge dynamics of $ TiO_{2} $ NRAs with annealing temperatures for the first time. Results show that at low temperatures (≤ 250 °C), residual modifiers (i.e., $ Cl^{−} $ and nano-sized carbon) anchored on $ TiO_{2} $ surface serve as recombination centers, which inhibit the electron collection; high-temperature annealing renders a clean $ TiO_{2} $ surface, enabling a substantially enhanced electron collection efficiency as high as ~ 95%. This mechanistic study would promote more applications of this class of cheap nanomaterials in a variety of fields such as solar cells, photocatalysis, supercapacitors, and batteries. Charge dynamics (dpeaa)DE-He213 Electron transport (dpeaa)DE-He213 Recombination (dpeaa)DE-He213 TiO (dpeaa)DE-He213 nanorod array (dpeaa)DE-He213 Solar cell (dpeaa)DE-He213 Annealing (dpeaa)DE-He213 Chen, Xinpeng verfasserin aut Jia, Qiaoying verfasserin aut Zhu, Gangqiang verfasserin aut Lei, Yimin verfasserin aut Xi, He verfasserin aut Xie, Yong verfasserin aut Zhou, Xuejiao verfasserin aut Ma, Xiaohua verfasserin aut Enthalten in Journal of solid state electrochemistry Berlin : Springer, 1997 22(2017), 2 vom: 08. Okt., Seite 567-580 (DE-627)271175400 (DE-600)1478940-1 1433-0768 nnns volume:22 year:2017 number:2 day:08 month:10 pages:567-580 https://dx.doi.org/10.1007/s10008-017-3786-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.14 ASE 35.90 ASE AR 22 2017 2 08 10 567-580 |
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Zhong, Peng @@aut@@ Chen, Xinpeng @@aut@@ Jia, Qiaoying @@aut@@ Zhu, Gangqiang @@aut@@ Lei, Yimin @@aut@@ Xi, He @@aut@@ Xie, Yong @@aut@@ Zhou, Xuejiao @@aut@@ Ma, Xiaohua @@aut@@ |
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However, the mechanism remains unclear. In this work, we have monitored charge dynamic properties of hydrothermal $ TiO_{2} $ nanorod arrays (NRAs) with their annealing temperatures in model dye-sensitized solar cells. Results indicate that electron collection efficiencies are in a trend of 400 > 530 > 80 > 250 °C due to a synergistic effect of electron transport and recombination, which are consistent with the device performance variations. We have further built up the relations between surface properties and charge dynamics of $ TiO_{2} $ NRAs with annealing temperatures for the first time. Results show that at low temperatures (≤ 250 °C), residual modifiers (i.e., $ Cl^{−} $ and nano-sized carbon) anchored on $ TiO_{2} $ surface serve as recombination centers, which inhibit the electron collection; high-temperature annealing renders a clean $ TiO_{2} $ surface, enabling a substantially enhanced electron collection efficiency as high as ~ 95%. 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Zhong, Peng |
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Zhong, Peng ddc 540 bkl 35.14 bkl 35.90 misc Charge dynamics misc Electron transport misc Recombination misc TiO misc nanorod array misc Solar cell misc Annealing Annealing temperature–dependent electronic properties in hydrothermal $ TiO_{2} $ nanorod arrays |
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540 ASE 35.14 bkl 35.90 bkl Annealing temperature–dependent electronic properties in hydrothermal $ TiO_{2} $ nanorod arrays Charge dynamics (dpeaa)DE-He213 Electron transport (dpeaa)DE-He213 Recombination (dpeaa)DE-He213 TiO (dpeaa)DE-He213 nanorod array (dpeaa)DE-He213 Solar cell (dpeaa)DE-He213 Annealing (dpeaa)DE-He213 |
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ddc 540 bkl 35.14 bkl 35.90 misc Charge dynamics misc Electron transport misc Recombination misc TiO misc nanorod array misc Solar cell misc Annealing |
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Annealing temperature–dependent electronic properties in hydrothermal $ TiO_{2} $ nanorod arrays |
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Annealing temperature–dependent electronic properties in hydrothermal $ TiO_{2} $ nanorod arrays |
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Journal of solid state electrochemistry |
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Journal of solid state electrochemistry |
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Zhong, Peng Chen, Xinpeng Jia, Qiaoying Zhu, Gangqiang Lei, Yimin Xi, He Xie, Yong Zhou, Xuejiao Ma, Xiaohua |
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Elektronische Aufsätze |
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Zhong, Peng |
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10.1007/s10008-017-3786-x |
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annealing temperature–dependent electronic properties in hydrothermal $ tio_{2} $ nanorod arrays |
| title_auth |
Annealing temperature–dependent electronic properties in hydrothermal $ TiO_{2} $ nanorod arrays |
| abstract |
Abstract Single-crystalline semiconductor nanostructures of metal oxides as-synthesized by solution methods generally demand high-temperature treatment, so as to achieve enhanced performance in energy and (opto)electronic devices. However, the mechanism remains unclear. In this work, we have monitored charge dynamic properties of hydrothermal $ TiO_{2} $ nanorod arrays (NRAs) with their annealing temperatures in model dye-sensitized solar cells. Results indicate that electron collection efficiencies are in a trend of 400 > 530 > 80 > 250 °C due to a synergistic effect of electron transport and recombination, which are consistent with the device performance variations. We have further built up the relations between surface properties and charge dynamics of $ TiO_{2} $ NRAs with annealing temperatures for the first time. Results show that at low temperatures (≤ 250 °C), residual modifiers (i.e., $ Cl^{−} $ and nano-sized carbon) anchored on $ TiO_{2} $ surface serve as recombination centers, which inhibit the electron collection; high-temperature annealing renders a clean $ TiO_{2} $ surface, enabling a substantially enhanced electron collection efficiency as high as ~ 95%. This mechanistic study would promote more applications of this class of cheap nanomaterials in a variety of fields such as solar cells, photocatalysis, supercapacitors, and batteries. |
| abstractGer |
Abstract Single-crystalline semiconductor nanostructures of metal oxides as-synthesized by solution methods generally demand high-temperature treatment, so as to achieve enhanced performance in energy and (opto)electronic devices. However, the mechanism remains unclear. In this work, we have monitored charge dynamic properties of hydrothermal $ TiO_{2} $ nanorod arrays (NRAs) with their annealing temperatures in model dye-sensitized solar cells. Results indicate that electron collection efficiencies are in a trend of 400 > 530 > 80 > 250 °C due to a synergistic effect of electron transport and recombination, which are consistent with the device performance variations. We have further built up the relations between surface properties and charge dynamics of $ TiO_{2} $ NRAs with annealing temperatures for the first time. Results show that at low temperatures (≤ 250 °C), residual modifiers (i.e., $ Cl^{−} $ and nano-sized carbon) anchored on $ TiO_{2} $ surface serve as recombination centers, which inhibit the electron collection; high-temperature annealing renders a clean $ TiO_{2} $ surface, enabling a substantially enhanced electron collection efficiency as high as ~ 95%. This mechanistic study would promote more applications of this class of cheap nanomaterials in a variety of fields such as solar cells, photocatalysis, supercapacitors, and batteries. |
| abstract_unstemmed |
Abstract Single-crystalline semiconductor nanostructures of metal oxides as-synthesized by solution methods generally demand high-temperature treatment, so as to achieve enhanced performance in energy and (opto)electronic devices. However, the mechanism remains unclear. In this work, we have monitored charge dynamic properties of hydrothermal $ TiO_{2} $ nanorod arrays (NRAs) with their annealing temperatures in model dye-sensitized solar cells. Results indicate that electron collection efficiencies are in a trend of 400 > 530 > 80 > 250 °C due to a synergistic effect of electron transport and recombination, which are consistent with the device performance variations. We have further built up the relations between surface properties and charge dynamics of $ TiO_{2} $ NRAs with annealing temperatures for the first time. Results show that at low temperatures (≤ 250 °C), residual modifiers (i.e., $ Cl^{−} $ and nano-sized carbon) anchored on $ TiO_{2} $ surface serve as recombination centers, which inhibit the electron collection; high-temperature annealing renders a clean $ TiO_{2} $ surface, enabling a substantially enhanced electron collection efficiency as high as ~ 95%. This mechanistic study would promote more applications of this class of cheap nanomaterials in a variety of fields such as solar cells, photocatalysis, supercapacitors, and batteries. |
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Annealing temperature–dependent electronic properties in hydrothermal $ TiO_{2} $ nanorod arrays |
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https://dx.doi.org/10.1007/s10008-017-3786-x |
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Chen, Xinpeng Jia, Qiaoying Zhu, Gangqiang Lei, Yimin Xi, He Xie, Yong Zhou, Xuejiao Ma, Xiaohua |
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Chen, Xinpeng Jia, Qiaoying Zhu, Gangqiang Lei, Yimin Xi, He Xie, Yong Zhou, Xuejiao Ma, Xiaohua |
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| score |
7.3999653 |