On the temperature dependence of fast electron transport in crystal lattices

Abstract Building upon the findings of Muto et al. [Phys. Lett. A 136, 33 (1989)] andMarchesoni and Lucheroni [Phys. Rev. E 44, 5303 (1991)] about the growth ofthe number of (anharmonic) lattice solitons with increasing temperature and using a recenttransport theory developed by the present authors...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Chetverikov, Alexander P. [verfasserIn] Ebeling, Werner [verfasserIn] Velarde, Manuel G. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2015

Schlagwörter:	Solid State and Materials

Übergeordnetes Werk:	Enthalten in: The European physical journal - Berlin : Springer, 1998, 88(2015), 8 vom: 10. Aug.
Übergeordnetes Werk:	volume:88 ; year:2015 ; number:8 ; day:10 ; month:08

Links:	Volltext

DOI / URN:	10.1140/epjb/e2015-60495-4

Katalog-ID:	SPR00882827X

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245	1	0	\|a On the temperature dependence of fast electron transport in crystal lattices
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520			\|a Abstract Building upon the findings of Muto et al. [Phys. Lett. A 136, 33 (1989)] andMarchesoni and Lucheroni [Phys. Rev. E 44, 5303 (1991)] about the growth ofthe number of (anharmonic) lattice solitons with increasing temperature and using a recenttransport theory developed by the present authors [A.P. Chetverikov, W. Ebeling, G. Röpke,M.G. Velarde, Eur. Phys. J. B 87, 153 (2014)] here we provide the fractionalpower law of the temperature dependence of resistivity in a rather general model forone-dimensional crystal lattices as, e.g., conducting polymers. We also show that thedetermining factor for the transport is the possibility of forming electron-soliton boundstates (in short solectrons) with a most significant contribution arising from the(bosonic) bound state of two electrons to a soliton (in short bisolectrons).
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author_variant	a p c ap apc w e we m g v mg mgv
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allfields	10.1140/epjb/e2015-60495-4 doi (DE-627)SPR00882827X (SPR)e2015-60495-4-e DE-627 ger DE-627 rakwb eng 530 ASE 33.60 bkl Chetverikov, Alexander P. verfasserin aut On the temperature dependence of fast electron transport in crystal lattices 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Building upon the findings of Muto et al. [Phys. Lett. A 136, 33 (1989)] andMarchesoni and Lucheroni [Phys. Rev. E 44, 5303 (1991)] about the growth ofthe number of (anharmonic) lattice solitons with increasing temperature and using a recenttransport theory developed by the present authors [A.P. Chetverikov, W. Ebeling, G. Röpke,M.G. Velarde, Eur. Phys. J. B 87, 153 (2014)] here we provide the fractionalpower law of the temperature dependence of resistivity in a rather general model forone-dimensional crystal lattices as, e.g., conducting polymers. We also show that thedetermining factor for the transport is the possibility of forming electron-soliton boundstates (in short solectrons) with a most significant contribution arising from the(bosonic) bound state of two electrons to a soliton (in short bisolectrons). Solid State and Materials (dpeaa)DE-He213 Ebeling, Werner verfasserin aut Velarde, Manuel G. verfasserin aut Enthalten in The European physical journal Berlin : Springer, 1998 88(2015), 8 vom: 10. Aug. (DE-627)253722926 (DE-600)1459068-2 1434-6036 nnns volume:88 year:2015 number:8 day:10 month:08 https://dx.doi.org/10.1140/epjb/e2015-60495-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.60 ASE AR 88 2015 8 10 08
spelling	10.1140/epjb/e2015-60495-4 doi (DE-627)SPR00882827X (SPR)e2015-60495-4-e DE-627 ger DE-627 rakwb eng 530 ASE 33.60 bkl Chetverikov, Alexander P. verfasserin aut On the temperature dependence of fast electron transport in crystal lattices 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Building upon the findings of Muto et al. [Phys. Lett. A 136, 33 (1989)] andMarchesoni and Lucheroni [Phys. Rev. E 44, 5303 (1991)] about the growth ofthe number of (anharmonic) lattice solitons with increasing temperature and using a recenttransport theory developed by the present authors [A.P. Chetverikov, W. Ebeling, G. Röpke,M.G. Velarde, Eur. Phys. J. B 87, 153 (2014)] here we provide the fractionalpower law of the temperature dependence of resistivity in a rather general model forone-dimensional crystal lattices as, e.g., conducting polymers. We also show that thedetermining factor for the transport is the possibility of forming electron-soliton boundstates (in short solectrons) with a most significant contribution arising from the(bosonic) bound state of two electrons to a soliton (in short bisolectrons). Solid State and Materials (dpeaa)DE-He213 Ebeling, Werner verfasserin aut Velarde, Manuel G. verfasserin aut Enthalten in The European physical journal Berlin : Springer, 1998 88(2015), 8 vom: 10. Aug. (DE-627)253722926 (DE-600)1459068-2 1434-6036 nnns volume:88 year:2015 number:8 day:10 month:08 https://dx.doi.org/10.1140/epjb/e2015-60495-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.60 ASE AR 88 2015 8 10 08
allfields_unstemmed	10.1140/epjb/e2015-60495-4 doi (DE-627)SPR00882827X (SPR)e2015-60495-4-e DE-627 ger DE-627 rakwb eng 530 ASE 33.60 bkl Chetverikov, Alexander P. verfasserin aut On the temperature dependence of fast electron transport in crystal lattices 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Building upon the findings of Muto et al. [Phys. Lett. A 136, 33 (1989)] andMarchesoni and Lucheroni [Phys. Rev. E 44, 5303 (1991)] about the growth ofthe number of (anharmonic) lattice solitons with increasing temperature and using a recenttransport theory developed by the present authors [A.P. Chetverikov, W. Ebeling, G. Röpke,M.G. Velarde, Eur. Phys. J. B 87, 153 (2014)] here we provide the fractionalpower law of the temperature dependence of resistivity in a rather general model forone-dimensional crystal lattices as, e.g., conducting polymers. We also show that thedetermining factor for the transport is the possibility of forming electron-soliton boundstates (in short solectrons) with a most significant contribution arising from the(bosonic) bound state of two electrons to a soliton (in short bisolectrons). Solid State and Materials (dpeaa)DE-He213 Ebeling, Werner verfasserin aut Velarde, Manuel G. verfasserin aut Enthalten in The European physical journal Berlin : Springer, 1998 88(2015), 8 vom: 10. Aug. (DE-627)253722926 (DE-600)1459068-2 1434-6036 nnns volume:88 year:2015 number:8 day:10 month:08 https://dx.doi.org/10.1140/epjb/e2015-60495-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.60 ASE AR 88 2015 8 10 08
allfieldsGer	10.1140/epjb/e2015-60495-4 doi (DE-627)SPR00882827X (SPR)e2015-60495-4-e DE-627 ger DE-627 rakwb eng 530 ASE 33.60 bkl Chetverikov, Alexander P. verfasserin aut On the temperature dependence of fast electron transport in crystal lattices 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Building upon the findings of Muto et al. [Phys. Lett. A 136, 33 (1989)] andMarchesoni and Lucheroni [Phys. Rev. E 44, 5303 (1991)] about the growth ofthe number of (anharmonic) lattice solitons with increasing temperature and using a recenttransport theory developed by the present authors [A.P. Chetverikov, W. Ebeling, G. Röpke,M.G. Velarde, Eur. Phys. J. B 87, 153 (2014)] here we provide the fractionalpower law of the temperature dependence of resistivity in a rather general model forone-dimensional crystal lattices as, e.g., conducting polymers. We also show that thedetermining factor for the transport is the possibility of forming electron-soliton boundstates (in short solectrons) with a most significant contribution arising from the(bosonic) bound state of two electrons to a soliton (in short bisolectrons). Solid State and Materials (dpeaa)DE-He213 Ebeling, Werner verfasserin aut Velarde, Manuel G. verfasserin aut Enthalten in The European physical journal Berlin : Springer, 1998 88(2015), 8 vom: 10. Aug. (DE-627)253722926 (DE-600)1459068-2 1434-6036 nnns volume:88 year:2015 number:8 day:10 month:08 https://dx.doi.org/10.1140/epjb/e2015-60495-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.60 ASE AR 88 2015 8 10 08
allfieldsSound	10.1140/epjb/e2015-60495-4 doi (DE-627)SPR00882827X (SPR)e2015-60495-4-e DE-627 ger DE-627 rakwb eng 530 ASE 33.60 bkl Chetverikov, Alexander P. verfasserin aut On the temperature dependence of fast electron transport in crystal lattices 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Building upon the findings of Muto et al. [Phys. Lett. A 136, 33 (1989)] andMarchesoni and Lucheroni [Phys. Rev. E 44, 5303 (1991)] about the growth ofthe number of (anharmonic) lattice solitons with increasing temperature and using a recenttransport theory developed by the present authors [A.P. Chetverikov, W. Ebeling, G. Röpke,M.G. Velarde, Eur. Phys. J. B 87, 153 (2014)] here we provide the fractionalpower law of the temperature dependence of resistivity in a rather general model forone-dimensional crystal lattices as, e.g., conducting polymers. We also show that thedetermining factor for the transport is the possibility of forming electron-soliton boundstates (in short solectrons) with a most significant contribution arising from the(bosonic) bound state of two electrons to a soliton (in short bisolectrons). Solid State and Materials (dpeaa)DE-He213 Ebeling, Werner verfasserin aut Velarde, Manuel G. verfasserin aut Enthalten in The European physical journal Berlin : Springer, 1998 88(2015), 8 vom: 10. Aug. (DE-627)253722926 (DE-600)1459068-2 1434-6036 nnns volume:88 year:2015 number:8 day:10 month:08 https://dx.doi.org/10.1140/epjb/e2015-60495-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_267 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.60 ASE AR 88 2015 8 10 08
language	English
source	Enthalten in The European physical journal 88(2015), 8 vom: 10. Aug. volume:88 year:2015 number:8 day:10 month:08
sourceStr	Enthalten in The European physical journal 88(2015), 8 vom: 10. Aug. volume:88 year:2015 number:8 day:10 month:08
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Solid State and Materials
dewey-raw	530
isfreeaccess_bool	false
container_title	The European physical journal
authorswithroles_txt_mv	Chetverikov, Alexander P. @@aut@@ Ebeling, Werner @@aut@@ Velarde, Manuel G. @@aut@@
publishDateDaySort_date	2015-08-10T00:00:00Z
hierarchy_top_id	253722926
dewey-sort	3530
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language_de	englisch
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author	Chetverikov, Alexander P.
spellingShingle	Chetverikov, Alexander P. ddc 530 bkl 33.60 misc Solid State and Materials On the temperature dependence of fast electron transport in crystal lattices
authorStr	Chetverikov, Alexander P.
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topic_title	530 ASE 33.60 bkl On the temperature dependence of fast electron transport in crystal lattices Solid State and Materials (dpeaa)DE-He213
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title	On the temperature dependence of fast electron transport in crystal lattices
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title_full	On the temperature dependence of fast electron transport in crystal lattices
author_sort	Chetverikov, Alexander P.
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author_browse	Chetverikov, Alexander P. Ebeling, Werner Velarde, Manuel G.
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author-letter	Chetverikov, Alexander P.
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author2-role	verfasserin
title_sort	on the temperature dependence of fast electron transport in crystal lattices
title_auth	On the temperature dependence of fast electron transport in crystal lattices
abstract	Abstract Building upon the findings of Muto et al. [Phys. Lett. A 136, 33 (1989)] andMarchesoni and Lucheroni [Phys. Rev. E 44, 5303 (1991)] about the growth ofthe number of (anharmonic) lattice solitons with increasing temperature and using a recenttransport theory developed by the present authors [A.P. Chetverikov, W. Ebeling, G. Röpke,M.G. Velarde, Eur. Phys. J. B 87, 153 (2014)] here we provide the fractionalpower law of the temperature dependence of resistivity in a rather general model forone-dimensional crystal lattices as, e.g., conducting polymers. We also show that thedetermining factor for the transport is the possibility of forming electron-soliton boundstates (in short solectrons) with a most significant contribution arising from the(bosonic) bound state of two electrons to a soliton (in short bisolectrons).
abstractGer	Abstract Building upon the findings of Muto et al. [Phys. Lett. A 136, 33 (1989)] andMarchesoni and Lucheroni [Phys. Rev. E 44, 5303 (1991)] about the growth ofthe number of (anharmonic) lattice solitons with increasing temperature and using a recenttransport theory developed by the present authors [A.P. Chetverikov, W. Ebeling, G. Röpke,M.G. Velarde, Eur. Phys. J. B 87, 153 (2014)] here we provide the fractionalpower law of the temperature dependence of resistivity in a rather general model forone-dimensional crystal lattices as, e.g., conducting polymers. We also show that thedetermining factor for the transport is the possibility of forming electron-soliton boundstates (in short solectrons) with a most significant contribution arising from the(bosonic) bound state of two electrons to a soliton (in short bisolectrons).
abstract_unstemmed	Abstract Building upon the findings of Muto et al. [Phys. Lett. A 136, 33 (1989)] andMarchesoni and Lucheroni [Phys. Rev. E 44, 5303 (1991)] about the growth ofthe number of (anharmonic) lattice solitons with increasing temperature and using a recenttransport theory developed by the present authors [A.P. Chetverikov, W. Ebeling, G. Röpke,M.G. Velarde, Eur. Phys. J. B 87, 153 (2014)] here we provide the fractionalpower law of the temperature dependence of resistivity in a rather general model forone-dimensional crystal lattices as, e.g., conducting polymers. We also show that thedetermining factor for the transport is the possibility of forming electron-soliton boundstates (in short solectrons) with a most significant contribution arising from the(bosonic) bound state of two electrons to a soliton (in short bisolectrons).
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title_short	On the temperature dependence of fast electron transport in crystal lattices
url	https://dx.doi.org/10.1140/epjb/e2015-60495-4
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author2	Ebeling, Werner Velarde, Manuel G.
author2Str	Ebeling, Werner Velarde, Manuel G.
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doi_str	10.1140/epjb/e2015-60495-4
up_date	2024-07-03T23:22:07.642Z
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