A sub-1 Volt 10-bit supply boosted SAR ADC design in standard CMOS

Abstract This paper presents a new very low-power, low-voltage successive approximation analog to digital converter (SAR ADC) design based on supply boosting technique. The supply boosting technique (SBT) and supply boosted (SB) circuits including level shifter, comparator, and supporting electronic...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Ay, Suat U. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2010

Schlagwörter:	Supply boosting technique Analog-digital converter SAR Low-power Supply boosted comparator

Übergeordnetes Werk:	Enthalten in: Analog integrated circuits and signal processing - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991, 66(2010), 2 vom: 15. Aug., Seite 213-221
Übergeordnetes Werk:	volume:66 ; year:2010 ; number:2 ; day:15 ; month:08 ; pages:213-221

Links:	Volltext

DOI / URN:	10.1007/s10470-010-9515-3

Katalog-ID:	SPR010312005

Internformat


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245	1	2	\|a A sub-1 Volt 10-bit supply boosted SAR ADC design in standard CMOS
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520			\|a Abstract This paper presents a new very low-power, low-voltage successive approximation analog to digital converter (SAR ADC) design based on supply boosting technique. The supply boosting technique (SBT) and supply boosted (SB) circuits including level shifter, comparator, and supporting electronics are described. Supply boosting provides wide input common mode range and sub-1 Volt operation for the circuits designed in standard CMOS processes that have only high-$ V_{t} $ MOSFETs. A 10-bit supply boosted SAR ADC was designed and fabricated in a standard 0.5 μm, 5 V, 2P3M, CMOS process in which threshold voltages of NMOS and PMOS devices are +0.8 and −0.9 V, respectively. Fabricated SB-SAR ADC achieves effective number of bits (ENOB) of 8.04, power consumption of 147 nW with sampling rate of 1.0 KS/s on 1 Volt supply. Measured figure of merit (FOM) was 280 fJ/conversion-step. Proposed supply boosting technique improves input common mode range of both SB comparator and SAR ADC, allows sub-1 Volt operation when threshold voltages are in the order of the supply voltage, and achieves low energy operation. Thus, SBT is suitable for mixed-signal circuit designed for energy limited applications and systems in where supply voltage is in the order of threshold voltages of the process.
650		4	\|a Supply boosting technique \|7 (dpeaa)DE-He213
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650		4	\|a Low-power \|7 (dpeaa)DE-He213
650		4	\|a Supply boosted comparator \|7 (dpeaa)DE-He213
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912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_31
912			\|a GBV_ILN_32
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
912			\|a GBV_ILN_100
912			\|a GBV_ILN_101
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_120
912			\|a GBV_ILN_138
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_250
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2031
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2039
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2070
912			\|a GBV_ILN_2086
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2107
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2116
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2119
912			\|a GBV_ILN_2122
912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
912			\|a GBV_ILN_2144
912			\|a GBV_ILN_2147
912			\|a GBV_ILN_2148
912			\|a GBV_ILN_2152
912			\|a GBV_ILN_2153
912			\|a GBV_ILN_2188
912			\|a GBV_ILN_2190
912			\|a GBV_ILN_2232
912			\|a GBV_ILN_2336
912			\|a GBV_ILN_2446
912			\|a GBV_ILN_2470
912			\|a GBV_ILN_2472
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_2522
912			\|a GBV_ILN_2548
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4046
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4242
912			\|a GBV_ILN_4246
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4251
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4326
912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4334
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4336
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4393
912			\|a GBV_ILN_4700
936	b	k	\|a 53.55 \|q ASE
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Indexfelder

author_variant	s u a su sua
matchkey_str	article:15731979:2010----::sbvl1btupyosesrddsg
hierarchy_sort_str	2010
bklnumber	53.55 53.73
publishDate	2010
allfields	10.1007/s10470-010-9515-3 doi (DE-627)SPR010312005 (SPR)s10470-010-9515-3-e DE-627 ger DE-627 rakwb eng 004 ASE 53.55 bkl 53.73 bkl Ay, Suat U. verfasserin aut A sub-1 Volt 10-bit supply boosted SAR ADC design in standard CMOS 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper presents a new very low-power, low-voltage successive approximation analog to digital converter (SAR ADC) design based on supply boosting technique. The supply boosting technique (SBT) and supply boosted (SB) circuits including level shifter, comparator, and supporting electronics are described. Supply boosting provides wide input common mode range and sub-1 Volt operation for the circuits designed in standard CMOS processes that have only high-$ V_{t} $ MOSFETs. A 10-bit supply boosted SAR ADC was designed and fabricated in a standard 0.5 μm, 5 V, 2P3M, CMOS process in which threshold voltages of NMOS and PMOS devices are +0.8 and −0.9 V, respectively. Fabricated SB-SAR ADC achieves effective number of bits (ENOB) of 8.04, power consumption of 147 nW with sampling rate of 1.0 KS/s on 1 Volt supply. Measured figure of merit (FOM) was 280 fJ/conversion-step. Proposed supply boosting technique improves input common mode range of both SB comparator and SAR ADC, allows sub-1 Volt operation when threshold voltages are in the order of the supply voltage, and achieves low energy operation. Thus, SBT is suitable for mixed-signal circuit designed for energy limited applications and systems in where supply voltage is in the order of threshold voltages of the process. Supply boosting technique (dpeaa)DE-He213 Analog-digital converter (dpeaa)DE-He213 SAR (dpeaa)DE-He213 Low-power (dpeaa)DE-He213 Supply boosted comparator (dpeaa)DE-He213 Enthalten in Analog integrated circuits and signal processing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 66(2010), 2 vom: 15. Aug., Seite 213-221 (DE-627)271348925 (DE-600)1479772-0 1573-1979 nnns volume:66 year:2010 number:2 day:15 month:08 pages:213-221 https://dx.doi.org/10.1007/s10470-010-9515-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 ASE 53.73 ASE AR 66 2010 2 15 08 213-221
spelling	10.1007/s10470-010-9515-3 doi (DE-627)SPR010312005 (SPR)s10470-010-9515-3-e DE-627 ger DE-627 rakwb eng 004 ASE 53.55 bkl 53.73 bkl Ay, Suat U. verfasserin aut A sub-1 Volt 10-bit supply boosted SAR ADC design in standard CMOS 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper presents a new very low-power, low-voltage successive approximation analog to digital converter (SAR ADC) design based on supply boosting technique. The supply boosting technique (SBT) and supply boosted (SB) circuits including level shifter, comparator, and supporting electronics are described. Supply boosting provides wide input common mode range and sub-1 Volt operation for the circuits designed in standard CMOS processes that have only high-$ V_{t} $ MOSFETs. A 10-bit supply boosted SAR ADC was designed and fabricated in a standard 0.5 μm, 5 V, 2P3M, CMOS process in which threshold voltages of NMOS and PMOS devices are +0.8 and −0.9 V, respectively. Fabricated SB-SAR ADC achieves effective number of bits (ENOB) of 8.04, power consumption of 147 nW with sampling rate of 1.0 KS/s on 1 Volt supply. Measured figure of merit (FOM) was 280 fJ/conversion-step. Proposed supply boosting technique improves input common mode range of both SB comparator and SAR ADC, allows sub-1 Volt operation when threshold voltages are in the order of the supply voltage, and achieves low energy operation. Thus, SBT is suitable for mixed-signal circuit designed for energy limited applications and systems in where supply voltage is in the order of threshold voltages of the process. Supply boosting technique (dpeaa)DE-He213 Analog-digital converter (dpeaa)DE-He213 SAR (dpeaa)DE-He213 Low-power (dpeaa)DE-He213 Supply boosted comparator (dpeaa)DE-He213 Enthalten in Analog integrated circuits and signal processing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 66(2010), 2 vom: 15. Aug., Seite 213-221 (DE-627)271348925 (DE-600)1479772-0 1573-1979 nnns volume:66 year:2010 number:2 day:15 month:08 pages:213-221 https://dx.doi.org/10.1007/s10470-010-9515-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 ASE 53.73 ASE AR 66 2010 2 15 08 213-221
allfields_unstemmed	10.1007/s10470-010-9515-3 doi (DE-627)SPR010312005 (SPR)s10470-010-9515-3-e DE-627 ger DE-627 rakwb eng 004 ASE 53.55 bkl 53.73 bkl Ay, Suat U. verfasserin aut A sub-1 Volt 10-bit supply boosted SAR ADC design in standard CMOS 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper presents a new very low-power, low-voltage successive approximation analog to digital converter (SAR ADC) design based on supply boosting technique. The supply boosting technique (SBT) and supply boosted (SB) circuits including level shifter, comparator, and supporting electronics are described. Supply boosting provides wide input common mode range and sub-1 Volt operation for the circuits designed in standard CMOS processes that have only high-$ V_{t} $ MOSFETs. A 10-bit supply boosted SAR ADC was designed and fabricated in a standard 0.5 μm, 5 V, 2P3M, CMOS process in which threshold voltages of NMOS and PMOS devices are +0.8 and −0.9 V, respectively. Fabricated SB-SAR ADC achieves effective number of bits (ENOB) of 8.04, power consumption of 147 nW with sampling rate of 1.0 KS/s on 1 Volt supply. Measured figure of merit (FOM) was 280 fJ/conversion-step. Proposed supply boosting technique improves input common mode range of both SB comparator and SAR ADC, allows sub-1 Volt operation when threshold voltages are in the order of the supply voltage, and achieves low energy operation. Thus, SBT is suitable for mixed-signal circuit designed for energy limited applications and systems in where supply voltage is in the order of threshold voltages of the process. Supply boosting technique (dpeaa)DE-He213 Analog-digital converter (dpeaa)DE-He213 SAR (dpeaa)DE-He213 Low-power (dpeaa)DE-He213 Supply boosted comparator (dpeaa)DE-He213 Enthalten in Analog integrated circuits and signal processing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 66(2010), 2 vom: 15. Aug., Seite 213-221 (DE-627)271348925 (DE-600)1479772-0 1573-1979 nnns volume:66 year:2010 number:2 day:15 month:08 pages:213-221 https://dx.doi.org/10.1007/s10470-010-9515-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 ASE 53.73 ASE AR 66 2010 2 15 08 213-221
allfieldsGer	10.1007/s10470-010-9515-3 doi (DE-627)SPR010312005 (SPR)s10470-010-9515-3-e DE-627 ger DE-627 rakwb eng 004 ASE 53.55 bkl 53.73 bkl Ay, Suat U. verfasserin aut A sub-1 Volt 10-bit supply boosted SAR ADC design in standard CMOS 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper presents a new very low-power, low-voltage successive approximation analog to digital converter (SAR ADC) design based on supply boosting technique. The supply boosting technique (SBT) and supply boosted (SB) circuits including level shifter, comparator, and supporting electronics are described. Supply boosting provides wide input common mode range and sub-1 Volt operation for the circuits designed in standard CMOS processes that have only high-$ V_{t} $ MOSFETs. A 10-bit supply boosted SAR ADC was designed and fabricated in a standard 0.5 μm, 5 V, 2P3M, CMOS process in which threshold voltages of NMOS and PMOS devices are +0.8 and −0.9 V, respectively. Fabricated SB-SAR ADC achieves effective number of bits (ENOB) of 8.04, power consumption of 147 nW with sampling rate of 1.0 KS/s on 1 Volt supply. Measured figure of merit (FOM) was 280 fJ/conversion-step. Proposed supply boosting technique improves input common mode range of both SB comparator and SAR ADC, allows sub-1 Volt operation when threshold voltages are in the order of the supply voltage, and achieves low energy operation. Thus, SBT is suitable for mixed-signal circuit designed for energy limited applications and systems in where supply voltage is in the order of threshold voltages of the process. Supply boosting technique (dpeaa)DE-He213 Analog-digital converter (dpeaa)DE-He213 SAR (dpeaa)DE-He213 Low-power (dpeaa)DE-He213 Supply boosted comparator (dpeaa)DE-He213 Enthalten in Analog integrated circuits and signal processing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 66(2010), 2 vom: 15. Aug., Seite 213-221 (DE-627)271348925 (DE-600)1479772-0 1573-1979 nnns volume:66 year:2010 number:2 day:15 month:08 pages:213-221 https://dx.doi.org/10.1007/s10470-010-9515-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 ASE 53.73 ASE AR 66 2010 2 15 08 213-221
allfieldsSound	10.1007/s10470-010-9515-3 doi (DE-627)SPR010312005 (SPR)s10470-010-9515-3-e DE-627 ger DE-627 rakwb eng 004 ASE 53.55 bkl 53.73 bkl Ay, Suat U. verfasserin aut A sub-1 Volt 10-bit supply boosted SAR ADC design in standard CMOS 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper presents a new very low-power, low-voltage successive approximation analog to digital converter (SAR ADC) design based on supply boosting technique. The supply boosting technique (SBT) and supply boosted (SB) circuits including level shifter, comparator, and supporting electronics are described. Supply boosting provides wide input common mode range and sub-1 Volt operation for the circuits designed in standard CMOS processes that have only high-$ V_{t} $ MOSFETs. A 10-bit supply boosted SAR ADC was designed and fabricated in a standard 0.5 μm, 5 V, 2P3M, CMOS process in which threshold voltages of NMOS and PMOS devices are +0.8 and −0.9 V, respectively. Fabricated SB-SAR ADC achieves effective number of bits (ENOB) of 8.04, power consumption of 147 nW with sampling rate of 1.0 KS/s on 1 Volt supply. Measured figure of merit (FOM) was 280 fJ/conversion-step. Proposed supply boosting technique improves input common mode range of both SB comparator and SAR ADC, allows sub-1 Volt operation when threshold voltages are in the order of the supply voltage, and achieves low energy operation. Thus, SBT is suitable for mixed-signal circuit designed for energy limited applications and systems in where supply voltage is in the order of threshold voltages of the process. Supply boosting technique (dpeaa)DE-He213 Analog-digital converter (dpeaa)DE-He213 SAR (dpeaa)DE-He213 Low-power (dpeaa)DE-He213 Supply boosted comparator (dpeaa)DE-He213 Enthalten in Analog integrated circuits and signal processing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 66(2010), 2 vom: 15. Aug., Seite 213-221 (DE-627)271348925 (DE-600)1479772-0 1573-1979 nnns volume:66 year:2010 number:2 day:15 month:08 pages:213-221 https://dx.doi.org/10.1007/s10470-010-9515-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 ASE 53.73 ASE AR 66 2010 2 15 08 213-221
language	English
source	Enthalten in Analog integrated circuits and signal processing 66(2010), 2 vom: 15. Aug., Seite 213-221 volume:66 year:2010 number:2 day:15 month:08 pages:213-221
sourceStr	Enthalten in Analog integrated circuits and signal processing 66(2010), 2 vom: 15. Aug., Seite 213-221 volume:66 year:2010 number:2 day:15 month:08 pages:213-221
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Supply boosting technique Analog-digital converter SAR Low-power Supply boosted comparator
dewey-raw	004
isfreeaccess_bool	false
container_title	Analog integrated circuits and signal processing
authorswithroles_txt_mv	Ay, Suat U. @@aut@@
publishDateDaySort_date	2010-08-15T00:00:00Z
hierarchy_top_id	271348925
dewey-sort	14
id	SPR010312005
language_de	englisch
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author	Ay, Suat U.
spellingShingle	Ay, Suat U. ddc 004 bkl 53.55 bkl 53.73 misc Supply boosting technique misc Analog-digital converter misc SAR misc Low-power misc Supply boosted comparator A sub-1 Volt 10-bit supply boosted SAR ADC design in standard CMOS
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topic_title	004 ASE 53.55 bkl 53.73 bkl A sub-1 Volt 10-bit supply boosted SAR ADC design in standard CMOS Supply boosting technique (dpeaa)DE-He213 Analog-digital converter (dpeaa)DE-He213 SAR (dpeaa)DE-He213 Low-power (dpeaa)DE-He213 Supply boosted comparator (dpeaa)DE-He213
topic	ddc 004 bkl 53.55 bkl 53.73 misc Supply boosting technique misc Analog-digital converter misc SAR misc Low-power misc Supply boosted comparator
topic_unstemmed	ddc 004 bkl 53.55 bkl 53.73 misc Supply boosting technique misc Analog-digital converter misc SAR misc Low-power misc Supply boosted comparator
topic_browse	ddc 004 bkl 53.55 bkl 53.73 misc Supply boosting technique misc Analog-digital converter misc SAR misc Low-power misc Supply boosted comparator
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title	A sub-1 Volt 10-bit supply boosted SAR ADC design in standard CMOS
ctrlnum	(DE-627)SPR010312005 (SPR)s10470-010-9515-3-e
title_full	A sub-1 Volt 10-bit supply boosted SAR ADC design in standard CMOS
author_sort	Ay, Suat U.
journal	Analog integrated circuits and signal processing
journalStr	Analog integrated circuits and signal processing
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title_sort	sub-1 volt 10-bit supply boosted sar adc design in standard cmos
title_auth	A sub-1 Volt 10-bit supply boosted SAR ADC design in standard CMOS
abstract	Abstract This paper presents a new very low-power, low-voltage successive approximation analog to digital converter (SAR ADC) design based on supply boosting technique. The supply boosting technique (SBT) and supply boosted (SB) circuits including level shifter, comparator, and supporting electronics are described. Supply boosting provides wide input common mode range and sub-1 Volt operation for the circuits designed in standard CMOS processes that have only high-$ V_{t} $ MOSFETs. A 10-bit supply boosted SAR ADC was designed and fabricated in a standard 0.5 μm, 5 V, 2P3M, CMOS process in which threshold voltages of NMOS and PMOS devices are +0.8 and −0.9 V, respectively. Fabricated SB-SAR ADC achieves effective number of bits (ENOB) of 8.04, power consumption of 147 nW with sampling rate of 1.0 KS/s on 1 Volt supply. Measured figure of merit (FOM) was 280 fJ/conversion-step. Proposed supply boosting technique improves input common mode range of both SB comparator and SAR ADC, allows sub-1 Volt operation when threshold voltages are in the order of the supply voltage, and achieves low energy operation. Thus, SBT is suitable for mixed-signal circuit designed for energy limited applications and systems in where supply voltage is in the order of threshold voltages of the process.
abstractGer	Abstract This paper presents a new very low-power, low-voltage successive approximation analog to digital converter (SAR ADC) design based on supply boosting technique. The supply boosting technique (SBT) and supply boosted (SB) circuits including level shifter, comparator, and supporting electronics are described. Supply boosting provides wide input common mode range and sub-1 Volt operation for the circuits designed in standard CMOS processes that have only high-$ V_{t} $ MOSFETs. A 10-bit supply boosted SAR ADC was designed and fabricated in a standard 0.5 μm, 5 V, 2P3M, CMOS process in which threshold voltages of NMOS and PMOS devices are +0.8 and −0.9 V, respectively. Fabricated SB-SAR ADC achieves effective number of bits (ENOB) of 8.04, power consumption of 147 nW with sampling rate of 1.0 KS/s on 1 Volt supply. Measured figure of merit (FOM) was 280 fJ/conversion-step. Proposed supply boosting technique improves input common mode range of both SB comparator and SAR ADC, allows sub-1 Volt operation when threshold voltages are in the order of the supply voltage, and achieves low energy operation. Thus, SBT is suitable for mixed-signal circuit designed for energy limited applications and systems in where supply voltage is in the order of threshold voltages of the process.
abstract_unstemmed	Abstract This paper presents a new very low-power, low-voltage successive approximation analog to digital converter (SAR ADC) design based on supply boosting technique. The supply boosting technique (SBT) and supply boosted (SB) circuits including level shifter, comparator, and supporting electronics are described. Supply boosting provides wide input common mode range and sub-1 Volt operation for the circuits designed in standard CMOS processes that have only high-$ V_{t} $ MOSFETs. A 10-bit supply boosted SAR ADC was designed and fabricated in a standard 0.5 μm, 5 V, 2P3M, CMOS process in which threshold voltages of NMOS and PMOS devices are +0.8 and −0.9 V, respectively. Fabricated SB-SAR ADC achieves effective number of bits (ENOB) of 8.04, power consumption of 147 nW with sampling rate of 1.0 KS/s on 1 Volt supply. Measured figure of merit (FOM) was 280 fJ/conversion-step. Proposed supply boosting technique improves input common mode range of both SB comparator and SAR ADC, allows sub-1 Volt operation when threshold voltages are in the order of the supply voltage, and achieves low energy operation. Thus, SBT is suitable for mixed-signal circuit designed for energy limited applications and systems in where supply voltage is in the order of threshold voltages of the process.
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title_short	A sub-1 Volt 10-bit supply boosted SAR ADC design in standard CMOS
url	https://dx.doi.org/10.1007/s10470-010-9515-3
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up_date	2024-07-03T15:18:26.795Z
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fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR010312005</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220110220000.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201005s2010 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10470-010-9515-3</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR010312005</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s10470-010-9515-3-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">004</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.55</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.73</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Ay, Suat U.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="2"><subfield code="a">A sub-1 Volt 10-bit supply boosted SAR ADC design in standard CMOS</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2010</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract This paper presents a new very low-power, low-voltage successive approximation analog to digital converter (SAR ADC) design based on supply boosting technique. The supply boosting technique (SBT) and supply boosted (SB) circuits including level shifter, comparator, and supporting electronics are described. Supply boosting provides wide input common mode range and sub-1 Volt operation for the circuits designed in standard CMOS processes that have only high-$ V_{t} $ MOSFETs. A 10-bit supply boosted SAR ADC was designed and fabricated in a standard 0.5 μm, 5 V, 2P3M, CMOS process in which threshold voltages of NMOS and PMOS devices are +0.8 and −0.9 V, respectively. Fabricated SB-SAR ADC achieves effective number of bits (ENOB) of 8.04, power consumption of 147 nW with sampling rate of 1.0 KS/s on 1 Volt supply. Measured figure of merit (FOM) was 280 fJ/conversion-step. Proposed supply boosting technique improves input common mode range of both SB comparator and SAR ADC, allows sub-1 Volt operation when threshold voltages are in the order of the supply voltage, and achieves low energy operation. 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A sub-1 Volt 10-bit supply boosted SAR ADC design in standard CMOS

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