A low phase noise 30-GHz frequency synthesizer with linear transconductance VCO and dual-injection-locked frequency divider
Abstract In this paper, a low phase noise 30-GHz frequency synthesizer with a linear transconductance voltage-controlled oscillator (VCO) and dual-injection-locked frequency divider (ILFD) is presented. In order to improve the phase noise of the frequency synthesizer, the LC VCO is designed with tra...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Lee, Dong-Soo [verfasserIn] Cho, SungHun [verfasserIn] Kim, SangYun [verfasserIn] Lee, JaeYong [verfasserIn] Hwang, KeumCheol [verfasserIn] Yang, Youngoo [verfasserIn] Seo, Mun-Kyo [verfasserIn] Pu, YoungGun [verfasserIn] Lee, Kang-Yoon [verfasserIn] |
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| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2016 |
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| Schlagwörter: |
Linear transconductance voltage |
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| Übergeordnetes Werk: |
Enthalten in: Analog integrated circuits and signal processing - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991, 86(2016), 3 vom: 20. Jan., Seite 365-376 |
|---|---|
| Übergeordnetes Werk: |
volume:86 ; year:2016 ; number:3 ; day:20 ; month:01 ; pages:365-376 |
| Links: |
|---|
| DOI / URN: |
10.1007/s10470-016-0692-6 |
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| Katalog-ID: |
SPR010323805 |
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| 100 | 1 | |a Lee, Dong-Soo |e verfasserin |4 aut | |
| 245 | 1 | 2 | |a A low phase noise 30-GHz frequency synthesizer with linear transconductance VCO and dual-injection-locked frequency divider |
| 264 | 1 | |c 2016 | |
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| 520 | |a Abstract In this paper, a low phase noise 30-GHz frequency synthesizer with a linear transconductance voltage-controlled oscillator (VCO) and dual-injection-locked frequency divider (ILFD) is presented. In order to improve the phase noise of the frequency synthesizer, the LC VCO is designed with transconductance linearization of the active devices. A dual-ILFD is proposed in order to achieve a wide locking range with low power consumption. It is implemented in 65 nm CMOS and the die area is 1.2 mm × 0.8 mm. The power consumption is 55 mW from the supply voltage of 1 V. The measured phase noise of the VCO is respectively −106 and −97.88 dBc/Hz at a 1-MHz offset from carrier frequency of 30.24 and 60.48 GHz. The measured tuning range of the VCO is about 13 %. The locking frequency range of the ILFD is from 14.1 to 45.8 GHz at the injection power of −6 dBm, with its load current being controlled automatically. | ||
| 650 | 4 | |a Frequency synthesizer |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Linear transconductance voltage |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a controlled oscillator |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Dual |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a injection |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a locked frequency divider |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Automatic frequency calibration |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Low phase noise |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Cho, SungHun |e verfasserin |4 aut | |
| 700 | 1 | |a Kim, SangYun |e verfasserin |4 aut | |
| 700 | 1 | |a Lee, JaeYong |e verfasserin |4 aut | |
| 700 | 1 | |a Hwang, KeumCheol |e verfasserin |4 aut | |
| 700 | 1 | |a Yang, Youngoo |e verfasserin |4 aut | |
| 700 | 1 | |a Seo, Mun-Kyo |e verfasserin |4 aut | |
| 700 | 1 | |a Pu, YoungGun |e verfasserin |4 aut | |
| 700 | 1 | |a Lee, Kang-Yoon |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Analog integrated circuits and signal processing |d Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 |g 86(2016), 3 vom: 20. Jan., Seite 365-376 |w (DE-627)271348925 |w (DE-600)1479772-0 |x 1573-1979 |7 nnns |
| 773 | 1 | 8 | |g volume:86 |g year:2016 |g number:3 |g day:20 |g month:01 |g pages:365-376 |
| 856 | 4 | 0 | |u https://dx.doi.org/10.1007/s10470-016-0692-6 |z lizenzpflichtig |3 Volltext |
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| 912 | |a GBV_ILN_60 | ||
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| 912 | |a GBV_ILN_90 | ||
| 912 | |a GBV_ILN_95 | ||
| 912 | |a GBV_ILN_100 | ||
| 912 | |a GBV_ILN_101 | ||
| 912 | |a GBV_ILN_105 | ||
| 912 | |a GBV_ILN_110 | ||
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| 912 | |a GBV_ILN_138 | ||
| 912 | |a GBV_ILN_150 | ||
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| 912 | |a GBV_ILN_152 | ||
| 912 | |a GBV_ILN_161 | ||
| 912 | |a GBV_ILN_170 | ||
| 912 | |a GBV_ILN_171 | ||
| 912 | |a GBV_ILN_187 | ||
| 912 | |a GBV_ILN_213 | ||
| 912 | |a GBV_ILN_224 | ||
| 912 | |a GBV_ILN_230 | ||
| 912 | |a GBV_ILN_250 | ||
| 912 | |a GBV_ILN_281 | ||
| 912 | |a GBV_ILN_285 | ||
| 912 | |a GBV_ILN_293 | ||
| 912 | |a GBV_ILN_370 | ||
| 912 | |a GBV_ILN_602 | ||
| 912 | |a GBV_ILN_636 | ||
| 912 | |a GBV_ILN_702 | ||
| 912 | |a GBV_ILN_2001 | ||
| 912 | |a GBV_ILN_2003 | ||
| 912 | |a GBV_ILN_2004 | ||
| 912 | |a GBV_ILN_2005 | ||
| 912 | |a GBV_ILN_2006 | ||
| 912 | |a GBV_ILN_2007 | ||
| 912 | |a GBV_ILN_2008 | ||
| 912 | |a GBV_ILN_2009 | ||
| 912 | |a GBV_ILN_2010 | ||
| 912 | |a GBV_ILN_2011 | ||
| 912 | |a GBV_ILN_2014 | ||
| 912 | |a GBV_ILN_2015 | ||
| 912 | |a GBV_ILN_2020 | ||
| 912 | |a GBV_ILN_2021 | ||
| 912 | |a GBV_ILN_2025 | ||
| 912 | |a GBV_ILN_2026 | ||
| 912 | |a GBV_ILN_2027 | ||
| 912 | |a GBV_ILN_2031 | ||
| 912 | |a GBV_ILN_2034 | ||
| 912 | |a GBV_ILN_2037 | ||
| 912 | |a GBV_ILN_2038 | ||
| 912 | |a GBV_ILN_2039 | ||
| 912 | |a GBV_ILN_2044 | ||
| 912 | |a GBV_ILN_2048 | ||
| 912 | |a GBV_ILN_2049 | ||
| 912 | |a GBV_ILN_2050 | ||
| 912 | |a GBV_ILN_2055 | ||
| 912 | |a GBV_ILN_2057 | ||
| 912 | |a GBV_ILN_2059 | ||
| 912 | |a GBV_ILN_2061 | ||
| 912 | |a GBV_ILN_2064 | ||
| 912 | |a GBV_ILN_2065 | ||
| 912 | |a GBV_ILN_2068 | ||
| 912 | |a GBV_ILN_2070 | ||
| 912 | |a GBV_ILN_2086 | ||
| 912 | |a GBV_ILN_2088 | ||
| 912 | |a GBV_ILN_2093 | ||
| 912 | |a GBV_ILN_2106 | ||
| 912 | |a GBV_ILN_2107 | ||
| 912 | |a GBV_ILN_2108 | ||
| 912 | |a GBV_ILN_2110 | ||
| 912 | |a GBV_ILN_2111 | ||
| 912 | |a GBV_ILN_2112 | ||
| 912 | |a GBV_ILN_2113 | ||
| 912 | |a GBV_ILN_2116 | ||
| 912 | |a GBV_ILN_2118 | ||
| 912 | |a GBV_ILN_2119 | ||
| 912 | |a GBV_ILN_2122 | ||
| 912 | |a GBV_ILN_2129 | ||
| 912 | |a GBV_ILN_2143 | ||
| 912 | |a GBV_ILN_2144 | ||
| 912 | |a GBV_ILN_2147 | ||
| 912 | |a GBV_ILN_2148 | ||
| 912 | |a GBV_ILN_2152 | ||
| 912 | |a GBV_ILN_2153 | ||
| 912 | |a GBV_ILN_2188 | ||
| 912 | |a GBV_ILN_2190 | ||
| 912 | |a GBV_ILN_2232 | ||
| 912 | |a GBV_ILN_2336 | ||
| 912 | |a GBV_ILN_2446 | ||
| 912 | |a GBV_ILN_2470 | ||
| 912 | |a GBV_ILN_2472 | ||
| 912 | |a GBV_ILN_2507 | ||
| 912 | |a GBV_ILN_2522 | ||
| 912 | |a GBV_ILN_2548 | ||
| 912 | |a GBV_ILN_4012 | ||
| 912 | |a GBV_ILN_4035 | ||
| 912 | |a GBV_ILN_4037 | ||
| 912 | |a GBV_ILN_4046 | ||
| 912 | |a GBV_ILN_4112 | ||
| 912 | |a GBV_ILN_4125 | ||
| 912 | |a GBV_ILN_4126 | ||
| 912 | |a GBV_ILN_4242 | ||
| 912 | |a GBV_ILN_4246 | ||
| 912 | |a GBV_ILN_4249 | ||
| 912 | |a GBV_ILN_4251 | ||
| 912 | |a GBV_ILN_4305 | ||
| 912 | |a GBV_ILN_4306 | ||
| 912 | |a GBV_ILN_4307 | ||
| 912 | |a GBV_ILN_4313 | ||
| 912 | |a GBV_ILN_4322 | ||
| 912 | |a GBV_ILN_4323 | ||
| 912 | |a GBV_ILN_4324 | ||
| 912 | |a GBV_ILN_4325 | ||
| 912 | |a GBV_ILN_4326 | ||
| 912 | |a GBV_ILN_4333 | ||
| 912 | |a GBV_ILN_4334 | ||
| 912 | |a GBV_ILN_4335 | ||
| 912 | |a GBV_ILN_4336 | ||
| 912 | |a GBV_ILN_4338 | ||
| 912 | |a GBV_ILN_4393 | ||
| 912 | |a GBV_ILN_4700 | ||
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10.1007/s10470-016-0692-6 doi (DE-627)SPR010323805 (SPR)s10470-016-0692-6-e DE-627 ger DE-627 rakwb eng 004 ASE 53.55 bkl 53.73 bkl Lee, Dong-Soo verfasserin aut A low phase noise 30-GHz frequency synthesizer with linear transconductance VCO and dual-injection-locked frequency divider 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this paper, a low phase noise 30-GHz frequency synthesizer with a linear transconductance voltage-controlled oscillator (VCO) and dual-injection-locked frequency divider (ILFD) is presented. In order to improve the phase noise of the frequency synthesizer, the LC VCO is designed with transconductance linearization of the active devices. A dual-ILFD is proposed in order to achieve a wide locking range with low power consumption. It is implemented in 65 nm CMOS and the die area is 1.2 mm × 0.8 mm. The power consumption is 55 mW from the supply voltage of 1 V. The measured phase noise of the VCO is respectively −106 and −97.88 dBc/Hz at a 1-MHz offset from carrier frequency of 30.24 and 60.48 GHz. The measured tuning range of the VCO is about 13 %. The locking frequency range of the ILFD is from 14.1 to 45.8 GHz at the injection power of −6 dBm, with its load current being controlled automatically. Frequency synthesizer (dpeaa)DE-He213 Linear transconductance voltage (dpeaa)DE-He213 controlled oscillator (dpeaa)DE-He213 Dual (dpeaa)DE-He213 injection (dpeaa)DE-He213 locked frequency divider (dpeaa)DE-He213 Automatic frequency calibration (dpeaa)DE-He213 Low phase noise (dpeaa)DE-He213 Cho, SungHun verfasserin aut Kim, SangYun verfasserin aut Lee, JaeYong verfasserin aut Hwang, KeumCheol verfasserin aut Yang, Youngoo verfasserin aut Seo, Mun-Kyo verfasserin aut Pu, YoungGun verfasserin aut Lee, Kang-Yoon verfasserin aut Enthalten in Analog integrated circuits and signal processing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 86(2016), 3 vom: 20. Jan., Seite 365-376 (DE-627)271348925 (DE-600)1479772-0 1573-1979 nnns volume:86 year:2016 number:3 day:20 month:01 pages:365-376 https://dx.doi.org/10.1007/s10470-016-0692-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 ASE 53.73 ASE AR 86 2016 3 20 01 365-376 |
| spelling |
10.1007/s10470-016-0692-6 doi (DE-627)SPR010323805 (SPR)s10470-016-0692-6-e DE-627 ger DE-627 rakwb eng 004 ASE 53.55 bkl 53.73 bkl Lee, Dong-Soo verfasserin aut A low phase noise 30-GHz frequency synthesizer with linear transconductance VCO and dual-injection-locked frequency divider 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this paper, a low phase noise 30-GHz frequency synthesizer with a linear transconductance voltage-controlled oscillator (VCO) and dual-injection-locked frequency divider (ILFD) is presented. In order to improve the phase noise of the frequency synthesizer, the LC VCO is designed with transconductance linearization of the active devices. A dual-ILFD is proposed in order to achieve a wide locking range with low power consumption. It is implemented in 65 nm CMOS and the die area is 1.2 mm × 0.8 mm. The power consumption is 55 mW from the supply voltage of 1 V. The measured phase noise of the VCO is respectively −106 and −97.88 dBc/Hz at a 1-MHz offset from carrier frequency of 30.24 and 60.48 GHz. The measured tuning range of the VCO is about 13 %. The locking frequency range of the ILFD is from 14.1 to 45.8 GHz at the injection power of −6 dBm, with its load current being controlled automatically. Frequency synthesizer (dpeaa)DE-He213 Linear transconductance voltage (dpeaa)DE-He213 controlled oscillator (dpeaa)DE-He213 Dual (dpeaa)DE-He213 injection (dpeaa)DE-He213 locked frequency divider (dpeaa)DE-He213 Automatic frequency calibration (dpeaa)DE-He213 Low phase noise (dpeaa)DE-He213 Cho, SungHun verfasserin aut Kim, SangYun verfasserin aut Lee, JaeYong verfasserin aut Hwang, KeumCheol verfasserin aut Yang, Youngoo verfasserin aut Seo, Mun-Kyo verfasserin aut Pu, YoungGun verfasserin aut Lee, Kang-Yoon verfasserin aut Enthalten in Analog integrated circuits and signal processing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 86(2016), 3 vom: 20. Jan., Seite 365-376 (DE-627)271348925 (DE-600)1479772-0 1573-1979 nnns volume:86 year:2016 number:3 day:20 month:01 pages:365-376 https://dx.doi.org/10.1007/s10470-016-0692-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 ASE 53.73 ASE AR 86 2016 3 20 01 365-376 |
| allfields_unstemmed |
10.1007/s10470-016-0692-6 doi (DE-627)SPR010323805 (SPR)s10470-016-0692-6-e DE-627 ger DE-627 rakwb eng 004 ASE 53.55 bkl 53.73 bkl Lee, Dong-Soo verfasserin aut A low phase noise 30-GHz frequency synthesizer with linear transconductance VCO and dual-injection-locked frequency divider 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this paper, a low phase noise 30-GHz frequency synthesizer with a linear transconductance voltage-controlled oscillator (VCO) and dual-injection-locked frequency divider (ILFD) is presented. In order to improve the phase noise of the frequency synthesizer, the LC VCO is designed with transconductance linearization of the active devices. A dual-ILFD is proposed in order to achieve a wide locking range with low power consumption. It is implemented in 65 nm CMOS and the die area is 1.2 mm × 0.8 mm. The power consumption is 55 mW from the supply voltage of 1 V. The measured phase noise of the VCO is respectively −106 and −97.88 dBc/Hz at a 1-MHz offset from carrier frequency of 30.24 and 60.48 GHz. The measured tuning range of the VCO is about 13 %. The locking frequency range of the ILFD is from 14.1 to 45.8 GHz at the injection power of −6 dBm, with its load current being controlled automatically. Frequency synthesizer (dpeaa)DE-He213 Linear transconductance voltage (dpeaa)DE-He213 controlled oscillator (dpeaa)DE-He213 Dual (dpeaa)DE-He213 injection (dpeaa)DE-He213 locked frequency divider (dpeaa)DE-He213 Automatic frequency calibration (dpeaa)DE-He213 Low phase noise (dpeaa)DE-He213 Cho, SungHun verfasserin aut Kim, SangYun verfasserin aut Lee, JaeYong verfasserin aut Hwang, KeumCheol verfasserin aut Yang, Youngoo verfasserin aut Seo, Mun-Kyo verfasserin aut Pu, YoungGun verfasserin aut Lee, Kang-Yoon verfasserin aut Enthalten in Analog integrated circuits and signal processing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 86(2016), 3 vom: 20. Jan., Seite 365-376 (DE-627)271348925 (DE-600)1479772-0 1573-1979 nnns volume:86 year:2016 number:3 day:20 month:01 pages:365-376 https://dx.doi.org/10.1007/s10470-016-0692-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 ASE 53.73 ASE AR 86 2016 3 20 01 365-376 |
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10.1007/s10470-016-0692-6 doi (DE-627)SPR010323805 (SPR)s10470-016-0692-6-e DE-627 ger DE-627 rakwb eng 004 ASE 53.55 bkl 53.73 bkl Lee, Dong-Soo verfasserin aut A low phase noise 30-GHz frequency synthesizer with linear transconductance VCO and dual-injection-locked frequency divider 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this paper, a low phase noise 30-GHz frequency synthesizer with a linear transconductance voltage-controlled oscillator (VCO) and dual-injection-locked frequency divider (ILFD) is presented. In order to improve the phase noise of the frequency synthesizer, the LC VCO is designed with transconductance linearization of the active devices. A dual-ILFD is proposed in order to achieve a wide locking range with low power consumption. It is implemented in 65 nm CMOS and the die area is 1.2 mm × 0.8 mm. The power consumption is 55 mW from the supply voltage of 1 V. The measured phase noise of the VCO is respectively −106 and −97.88 dBc/Hz at a 1-MHz offset from carrier frequency of 30.24 and 60.48 GHz. The measured tuning range of the VCO is about 13 %. The locking frequency range of the ILFD is from 14.1 to 45.8 GHz at the injection power of −6 dBm, with its load current being controlled automatically. Frequency synthesizer (dpeaa)DE-He213 Linear transconductance voltage (dpeaa)DE-He213 controlled oscillator (dpeaa)DE-He213 Dual (dpeaa)DE-He213 injection (dpeaa)DE-He213 locked frequency divider (dpeaa)DE-He213 Automatic frequency calibration (dpeaa)DE-He213 Low phase noise (dpeaa)DE-He213 Cho, SungHun verfasserin aut Kim, SangYun verfasserin aut Lee, JaeYong verfasserin aut Hwang, KeumCheol verfasserin aut Yang, Youngoo verfasserin aut Seo, Mun-Kyo verfasserin aut Pu, YoungGun verfasserin aut Lee, Kang-Yoon verfasserin aut Enthalten in Analog integrated circuits and signal processing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 86(2016), 3 vom: 20. Jan., Seite 365-376 (DE-627)271348925 (DE-600)1479772-0 1573-1979 nnns volume:86 year:2016 number:3 day:20 month:01 pages:365-376 https://dx.doi.org/10.1007/s10470-016-0692-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 ASE 53.73 ASE AR 86 2016 3 20 01 365-376 |
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10.1007/s10470-016-0692-6 doi (DE-627)SPR010323805 (SPR)s10470-016-0692-6-e DE-627 ger DE-627 rakwb eng 004 ASE 53.55 bkl 53.73 bkl Lee, Dong-Soo verfasserin aut A low phase noise 30-GHz frequency synthesizer with linear transconductance VCO and dual-injection-locked frequency divider 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this paper, a low phase noise 30-GHz frequency synthesizer with a linear transconductance voltage-controlled oscillator (VCO) and dual-injection-locked frequency divider (ILFD) is presented. In order to improve the phase noise of the frequency synthesizer, the LC VCO is designed with transconductance linearization of the active devices. A dual-ILFD is proposed in order to achieve a wide locking range with low power consumption. It is implemented in 65 nm CMOS and the die area is 1.2 mm × 0.8 mm. The power consumption is 55 mW from the supply voltage of 1 V. The measured phase noise of the VCO is respectively −106 and −97.88 dBc/Hz at a 1-MHz offset from carrier frequency of 30.24 and 60.48 GHz. The measured tuning range of the VCO is about 13 %. The locking frequency range of the ILFD is from 14.1 to 45.8 GHz at the injection power of −6 dBm, with its load current being controlled automatically. Frequency synthesizer (dpeaa)DE-He213 Linear transconductance voltage (dpeaa)DE-He213 controlled oscillator (dpeaa)DE-He213 Dual (dpeaa)DE-He213 injection (dpeaa)DE-He213 locked frequency divider (dpeaa)DE-He213 Automatic frequency calibration (dpeaa)DE-He213 Low phase noise (dpeaa)DE-He213 Cho, SungHun verfasserin aut Kim, SangYun verfasserin aut Lee, JaeYong verfasserin aut Hwang, KeumCheol verfasserin aut Yang, Youngoo verfasserin aut Seo, Mun-Kyo verfasserin aut Pu, YoungGun verfasserin aut Lee, Kang-Yoon verfasserin aut Enthalten in Analog integrated circuits and signal processing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 86(2016), 3 vom: 20. Jan., Seite 365-376 (DE-627)271348925 (DE-600)1479772-0 1573-1979 nnns volume:86 year:2016 number:3 day:20 month:01 pages:365-376 https://dx.doi.org/10.1007/s10470-016-0692-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 ASE 53.73 ASE AR 86 2016 3 20 01 365-376 |
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English |
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Enthalten in Analog integrated circuits and signal processing 86(2016), 3 vom: 20. Jan., Seite 365-376 volume:86 year:2016 number:3 day:20 month:01 pages:365-376 |
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Enthalten in Analog integrated circuits and signal processing 86(2016), 3 vom: 20. Jan., Seite 365-376 volume:86 year:2016 number:3 day:20 month:01 pages:365-376 |
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Frequency synthesizer Linear transconductance voltage controlled oscillator Dual injection locked frequency divider Automatic frequency calibration Low phase noise |
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Analog integrated circuits and signal processing |
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Lee, Dong-Soo @@aut@@ Cho, SungHun @@aut@@ Kim, SangYun @@aut@@ Lee, JaeYong @@aut@@ Hwang, KeumCheol @@aut@@ Yang, Youngoo @@aut@@ Seo, Mun-Kyo @@aut@@ Pu, YoungGun @@aut@@ Lee, Kang-Yoon @@aut@@ |
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2016-01-20T00:00:00Z |
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In order to improve the phase noise of the frequency synthesizer, the LC VCO is designed with transconductance linearization of the active devices. A dual-ILFD is proposed in order to achieve a wide locking range with low power consumption. It is implemented in 65 nm CMOS and the die area is 1.2 mm × 0.8 mm. The power consumption is 55 mW from the supply voltage of 1 V. The measured phase noise of the VCO is respectively −106 and −97.88 dBc/Hz at a 1-MHz offset from carrier frequency of 30.24 and 60.48 GHz. The measured tuning range of the VCO is about 13 %. The locking frequency range of the ILFD is from 14.1 to 45.8 GHz at the injection power of −6 dBm, with its load current being controlled automatically.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Frequency synthesizer</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Linear transconductance voltage</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">controlled oscillator</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Dual</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">injection</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">locked frequency divider</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Automatic frequency calibration</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Low phase noise</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Cho, SungHun</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kim, SangYun</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lee, JaeYong</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hwang, KeumCheol</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yang, Youngoo</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Seo, Mun-Kyo</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pu, YoungGun</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lee, Kang-Yoon</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Analog integrated circuits and signal processing</subfield><subfield code="d">Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991</subfield><subfield code="g">86(2016), 3 vom: 20. 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Lee, Dong-Soo |
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Lee, Dong-Soo ddc 004 bkl 53.55 bkl 53.73 misc Frequency synthesizer misc Linear transconductance voltage misc controlled oscillator misc Dual misc injection misc locked frequency divider misc Automatic frequency calibration misc Low phase noise A low phase noise 30-GHz frequency synthesizer with linear transconductance VCO and dual-injection-locked frequency divider |
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004 ASE 53.55 bkl 53.73 bkl A low phase noise 30-GHz frequency synthesizer with linear transconductance VCO and dual-injection-locked frequency divider Frequency synthesizer (dpeaa)DE-He213 Linear transconductance voltage (dpeaa)DE-He213 controlled oscillator (dpeaa)DE-He213 Dual (dpeaa)DE-He213 injection (dpeaa)DE-He213 locked frequency divider (dpeaa)DE-He213 Automatic frequency calibration (dpeaa)DE-He213 Low phase noise (dpeaa)DE-He213 |
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ddc 004 bkl 53.55 bkl 53.73 misc Frequency synthesizer misc Linear transconductance voltage misc controlled oscillator misc Dual misc injection misc locked frequency divider misc Automatic frequency calibration misc Low phase noise |
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ddc 004 bkl 53.55 bkl 53.73 misc Frequency synthesizer misc Linear transconductance voltage misc controlled oscillator misc Dual misc injection misc locked frequency divider misc Automatic frequency calibration misc Low phase noise |
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ddc 004 bkl 53.55 bkl 53.73 misc Frequency synthesizer misc Linear transconductance voltage misc controlled oscillator misc Dual misc injection misc locked frequency divider misc Automatic frequency calibration misc Low phase noise |
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A low phase noise 30-GHz frequency synthesizer with linear transconductance VCO and dual-injection-locked frequency divider |
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(DE-627)SPR010323805 (SPR)s10470-016-0692-6-e |
| title_full |
A low phase noise 30-GHz frequency synthesizer with linear transconductance VCO and dual-injection-locked frequency divider |
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Lee, Dong-Soo |
| journal |
Analog integrated circuits and signal processing |
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Analog integrated circuits and signal processing |
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eng |
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000 - Computer science, information & general works |
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marc |
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2016 |
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Lee, Dong-Soo Cho, SungHun Kim, SangYun Lee, JaeYong Hwang, KeumCheol Yang, Youngoo Seo, Mun-Kyo Pu, YoungGun Lee, Kang-Yoon |
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86 |
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004 ASE 53.55 bkl 53.73 bkl |
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Elektronische Aufsätze |
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Lee, Dong-Soo |
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10.1007/s10470-016-0692-6 |
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004 |
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verfasserin |
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low phase noise 30-ghz frequency synthesizer with linear transconductance vco and dual-injection-locked frequency divider |
| title_auth |
A low phase noise 30-GHz frequency synthesizer with linear transconductance VCO and dual-injection-locked frequency divider |
| abstract |
Abstract In this paper, a low phase noise 30-GHz frequency synthesizer with a linear transconductance voltage-controlled oscillator (VCO) and dual-injection-locked frequency divider (ILFD) is presented. In order to improve the phase noise of the frequency synthesizer, the LC VCO is designed with transconductance linearization of the active devices. A dual-ILFD is proposed in order to achieve a wide locking range with low power consumption. It is implemented in 65 nm CMOS and the die area is 1.2 mm × 0.8 mm. The power consumption is 55 mW from the supply voltage of 1 V. The measured phase noise of the VCO is respectively −106 and −97.88 dBc/Hz at a 1-MHz offset from carrier frequency of 30.24 and 60.48 GHz. The measured tuning range of the VCO is about 13 %. The locking frequency range of the ILFD is from 14.1 to 45.8 GHz at the injection power of −6 dBm, with its load current being controlled automatically. |
| abstractGer |
Abstract In this paper, a low phase noise 30-GHz frequency synthesizer with a linear transconductance voltage-controlled oscillator (VCO) and dual-injection-locked frequency divider (ILFD) is presented. In order to improve the phase noise of the frequency synthesizer, the LC VCO is designed with transconductance linearization of the active devices. A dual-ILFD is proposed in order to achieve a wide locking range with low power consumption. It is implemented in 65 nm CMOS and the die area is 1.2 mm × 0.8 mm. The power consumption is 55 mW from the supply voltage of 1 V. The measured phase noise of the VCO is respectively −106 and −97.88 dBc/Hz at a 1-MHz offset from carrier frequency of 30.24 and 60.48 GHz. The measured tuning range of the VCO is about 13 %. The locking frequency range of the ILFD is from 14.1 to 45.8 GHz at the injection power of −6 dBm, with its load current being controlled automatically. |
| abstract_unstemmed |
Abstract In this paper, a low phase noise 30-GHz frequency synthesizer with a linear transconductance voltage-controlled oscillator (VCO) and dual-injection-locked frequency divider (ILFD) is presented. In order to improve the phase noise of the frequency synthesizer, the LC VCO is designed with transconductance linearization of the active devices. A dual-ILFD is proposed in order to achieve a wide locking range with low power consumption. It is implemented in 65 nm CMOS and the die area is 1.2 mm × 0.8 mm. The power consumption is 55 mW from the supply voltage of 1 V. The measured phase noise of the VCO is respectively −106 and −97.88 dBc/Hz at a 1-MHz offset from carrier frequency of 30.24 and 60.48 GHz. The measured tuning range of the VCO is about 13 %. The locking frequency range of the ILFD is from 14.1 to 45.8 GHz at the injection power of −6 dBm, with its load current being controlled automatically. |
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3 |
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A low phase noise 30-GHz frequency synthesizer with linear transconductance VCO and dual-injection-locked frequency divider |
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https://dx.doi.org/10.1007/s10470-016-0692-6 |
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Cho, SungHun Kim, SangYun Lee, JaeYong Hwang, KeumCheol Yang, Youngoo Seo, Mun-Kyo Pu, YoungGun Lee, Kang-Yoon |
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Cho, SungHun Kim, SangYun Lee, JaeYong Hwang, KeumCheol Yang, Youngoo Seo, Mun-Kyo Pu, YoungGun Lee, Kang-Yoon |
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2024-07-03T15:22:52.066Z |
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| score |
7.401602 |