A CMOS low noise transconductance amplifier for 1–6 GHz bands

Abstract The linearity and noise requirements in multi-band multi-standard applications make the design of RF CMOS circuits a very challenging task. A low noise transconductance amplifier (LNTA) in 130 nm CMOS technology that operates between 1 and 6 GHz is presented. The LNTA is based on a shunt-fe...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Cordova, David [verfasserIn] Bampi, Sergio [verfasserIn] Fabris, Eric [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2016

Schlagwörter:	Wideband Noise reduction Low-noise amplifier (LNA) Low-noise transconductance amplifier (LNTA) CMOS

Übergeordnetes Werk:	Enthalten in: Analog integrated circuits and signal processing - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991, 89(2016), 3 vom: 28. Juli, Seite 585-592
Übergeordnetes Werk:	volume:89 ; year:2016 ; number:3 ; day:28 ; month:07 ; pages:585-592

Links:	Volltext

DOI / URN:	10.1007/s10470-016-0802-5

Katalog-ID:	SPR010325352

Internformat


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520			\|a Abstract The linearity and noise requirements in multi-band multi-standard applications make the design of RF CMOS circuits a very challenging task. A low noise transconductance amplifier (LNTA) in 130 nm CMOS technology that operates between 1 and 6 GHz is presented. The LNTA is based on a shunt-feedback (SFB) amplifier with current-reuse scheme and employing the noise-canceling technique used in low-noise amplifier designs for wideband input matching. Two versions of the LNTA were designed in a 130 nm CMOS process and occupy 0.038 and 0.014 $ mm^{2} $ of silicon area while consuming just 9.1 and 7.94 mW, respectively. The second version is an inductorless, smaller, and optimized version of the first one. Post-layout simulations in the temperature range of −40 to 125 °C show a good trade-off between noise and power-consumption across the frequency span with an average noise figure of 3.8 dB and a minimum transconductance of 41.5 mS over the entire band. Performance variations were estimated at 2 GHz with Monte Carlo analysis.
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700	1		\|a Bampi, Sergio \|e verfasserin \|4 aut
700	1		\|a Fabris, Eric \|e verfasserin \|4 aut
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912			\|a GBV_ILN_24
912			\|a GBV_ILN_31
912			\|a GBV_ILN_32
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
912			\|a GBV_ILN_100
912			\|a GBV_ILN_101
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_120
912			\|a GBV_ILN_138
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_250
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2031
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2039
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2070
912			\|a GBV_ILN_2086
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2107
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2116
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2119
912			\|a GBV_ILN_2122
912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
912			\|a GBV_ILN_2144
912			\|a GBV_ILN_2147
912			\|a GBV_ILN_2148
912			\|a GBV_ILN_2152
912			\|a GBV_ILN_2153
912			\|a GBV_ILN_2188
912			\|a GBV_ILN_2190
912			\|a GBV_ILN_2232
912			\|a GBV_ILN_2336
912			\|a GBV_ILN_2446
912			\|a GBV_ILN_2470
912			\|a GBV_ILN_2472
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_2522
912			\|a GBV_ILN_2548
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4046
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4242
912			\|a GBV_ILN_4246
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4251
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
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912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
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912			\|a GBV_ILN_4326
912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4334
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4336
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4393
912			\|a GBV_ILN_4700
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author_variant	d c dc s b sb e f ef
matchkey_str	article:15731979:2016----::colwostasodcacapii
hierarchy_sort_str	2016
bklnumber	53.55 53.73
publishDate	2016
allfields	10.1007/s10470-016-0802-5 doi (DE-627)SPR010325352 (SPR)s10470-016-0802-5-e DE-627 ger DE-627 rakwb eng 004 ASE 53.55 bkl 53.73 bkl Cordova, David verfasserin aut A CMOS low noise transconductance amplifier for 1–6 GHz bands 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The linearity and noise requirements in multi-band multi-standard applications make the design of RF CMOS circuits a very challenging task. A low noise transconductance amplifier (LNTA) in 130 nm CMOS technology that operates between 1 and 6 GHz is presented. The LNTA is based on a shunt-feedback (SFB) amplifier with current-reuse scheme and employing the noise-canceling technique used in low-noise amplifier designs for wideband input matching. Two versions of the LNTA were designed in a 130 nm CMOS process and occupy 0.038 and 0.014 $ mm^{2} $ of silicon area while consuming just 9.1 and 7.94 mW, respectively. The second version is an inductorless, smaller, and optimized version of the first one. Post-layout simulations in the temperature range of −40 to 125 °C show a good trade-off between noise and power-consumption across the frequency span with an average noise figure of 3.8 dB and a minimum transconductance of 41.5 mS over the entire band. Performance variations were estimated at 2 GHz with Monte Carlo analysis. Wideband (dpeaa)DE-He213 Noise reduction (dpeaa)DE-He213 Low-noise amplifier (LNA) (dpeaa)DE-He213 Low-noise transconductance amplifier (LNTA) (dpeaa)DE-He213 CMOS (dpeaa)DE-He213 Bampi, Sergio verfasserin aut Fabris, Eric verfasserin aut Enthalten in Analog integrated circuits and signal processing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 89(2016), 3 vom: 28. Juli, Seite 585-592 (DE-627)271348925 (DE-600)1479772-0 1573-1979 nnns volume:89 year:2016 number:3 day:28 month:07 pages:585-592 https://dx.doi.org/10.1007/s10470-016-0802-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 ASE 53.73 ASE AR 89 2016 3 28 07 585-592
spelling	10.1007/s10470-016-0802-5 doi (DE-627)SPR010325352 (SPR)s10470-016-0802-5-e DE-627 ger DE-627 rakwb eng 004 ASE 53.55 bkl 53.73 bkl Cordova, David verfasserin aut A CMOS low noise transconductance amplifier for 1–6 GHz bands 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The linearity and noise requirements in multi-band multi-standard applications make the design of RF CMOS circuits a very challenging task. A low noise transconductance amplifier (LNTA) in 130 nm CMOS technology that operates between 1 and 6 GHz is presented. The LNTA is based on a shunt-feedback (SFB) amplifier with current-reuse scheme and employing the noise-canceling technique used in low-noise amplifier designs for wideband input matching. Two versions of the LNTA were designed in a 130 nm CMOS process and occupy 0.038 and 0.014 $ mm^{2} $ of silicon area while consuming just 9.1 and 7.94 mW, respectively. The second version is an inductorless, smaller, and optimized version of the first one. Post-layout simulations in the temperature range of −40 to 125 °C show a good trade-off between noise and power-consumption across the frequency span with an average noise figure of 3.8 dB and a minimum transconductance of 41.5 mS over the entire band. Performance variations were estimated at 2 GHz with Monte Carlo analysis. Wideband (dpeaa)DE-He213 Noise reduction (dpeaa)DE-He213 Low-noise amplifier (LNA) (dpeaa)DE-He213 Low-noise transconductance amplifier (LNTA) (dpeaa)DE-He213 CMOS (dpeaa)DE-He213 Bampi, Sergio verfasserin aut Fabris, Eric verfasserin aut Enthalten in Analog integrated circuits and signal processing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 89(2016), 3 vom: 28. Juli, Seite 585-592 (DE-627)271348925 (DE-600)1479772-0 1573-1979 nnns volume:89 year:2016 number:3 day:28 month:07 pages:585-592 https://dx.doi.org/10.1007/s10470-016-0802-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 ASE 53.73 ASE AR 89 2016 3 28 07 585-592
allfields_unstemmed	10.1007/s10470-016-0802-5 doi (DE-627)SPR010325352 (SPR)s10470-016-0802-5-e DE-627 ger DE-627 rakwb eng 004 ASE 53.55 bkl 53.73 bkl Cordova, David verfasserin aut A CMOS low noise transconductance amplifier for 1–6 GHz bands 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The linearity and noise requirements in multi-band multi-standard applications make the design of RF CMOS circuits a very challenging task. A low noise transconductance amplifier (LNTA) in 130 nm CMOS technology that operates between 1 and 6 GHz is presented. The LNTA is based on a shunt-feedback (SFB) amplifier with current-reuse scheme and employing the noise-canceling technique used in low-noise amplifier designs for wideband input matching. Two versions of the LNTA were designed in a 130 nm CMOS process and occupy 0.038 and 0.014 $ mm^{2} $ of silicon area while consuming just 9.1 and 7.94 mW, respectively. The second version is an inductorless, smaller, and optimized version of the first one. Post-layout simulations in the temperature range of −40 to 125 °C show a good trade-off between noise and power-consumption across the frequency span with an average noise figure of 3.8 dB and a minimum transconductance of 41.5 mS over the entire band. Performance variations were estimated at 2 GHz with Monte Carlo analysis. Wideband (dpeaa)DE-He213 Noise reduction (dpeaa)DE-He213 Low-noise amplifier (LNA) (dpeaa)DE-He213 Low-noise transconductance amplifier (LNTA) (dpeaa)DE-He213 CMOS (dpeaa)DE-He213 Bampi, Sergio verfasserin aut Fabris, Eric verfasserin aut Enthalten in Analog integrated circuits and signal processing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 89(2016), 3 vom: 28. Juli, Seite 585-592 (DE-627)271348925 (DE-600)1479772-0 1573-1979 nnns volume:89 year:2016 number:3 day:28 month:07 pages:585-592 https://dx.doi.org/10.1007/s10470-016-0802-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 ASE 53.73 ASE AR 89 2016 3 28 07 585-592
allfieldsGer	10.1007/s10470-016-0802-5 doi (DE-627)SPR010325352 (SPR)s10470-016-0802-5-e DE-627 ger DE-627 rakwb eng 004 ASE 53.55 bkl 53.73 bkl Cordova, David verfasserin aut A CMOS low noise transconductance amplifier for 1–6 GHz bands 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The linearity and noise requirements in multi-band multi-standard applications make the design of RF CMOS circuits a very challenging task. A low noise transconductance amplifier (LNTA) in 130 nm CMOS technology that operates between 1 and 6 GHz is presented. The LNTA is based on a shunt-feedback (SFB) amplifier with current-reuse scheme and employing the noise-canceling technique used in low-noise amplifier designs for wideband input matching. Two versions of the LNTA were designed in a 130 nm CMOS process and occupy 0.038 and 0.014 $ mm^{2} $ of silicon area while consuming just 9.1 and 7.94 mW, respectively. The second version is an inductorless, smaller, and optimized version of the first one. Post-layout simulations in the temperature range of −40 to 125 °C show a good trade-off between noise and power-consumption across the frequency span with an average noise figure of 3.8 dB and a minimum transconductance of 41.5 mS over the entire band. Performance variations were estimated at 2 GHz with Monte Carlo analysis. Wideband (dpeaa)DE-He213 Noise reduction (dpeaa)DE-He213 Low-noise amplifier (LNA) (dpeaa)DE-He213 Low-noise transconductance amplifier (LNTA) (dpeaa)DE-He213 CMOS (dpeaa)DE-He213 Bampi, Sergio verfasserin aut Fabris, Eric verfasserin aut Enthalten in Analog integrated circuits and signal processing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 89(2016), 3 vom: 28. Juli, Seite 585-592 (DE-627)271348925 (DE-600)1479772-0 1573-1979 nnns volume:89 year:2016 number:3 day:28 month:07 pages:585-592 https://dx.doi.org/10.1007/s10470-016-0802-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 ASE 53.73 ASE AR 89 2016 3 28 07 585-592
allfieldsSound	10.1007/s10470-016-0802-5 doi (DE-627)SPR010325352 (SPR)s10470-016-0802-5-e DE-627 ger DE-627 rakwb eng 004 ASE 53.55 bkl 53.73 bkl Cordova, David verfasserin aut A CMOS low noise transconductance amplifier for 1–6 GHz bands 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The linearity and noise requirements in multi-band multi-standard applications make the design of RF CMOS circuits a very challenging task. A low noise transconductance amplifier (LNTA) in 130 nm CMOS technology that operates between 1 and 6 GHz is presented. The LNTA is based on a shunt-feedback (SFB) amplifier with current-reuse scheme and employing the noise-canceling technique used in low-noise amplifier designs for wideband input matching. Two versions of the LNTA were designed in a 130 nm CMOS process and occupy 0.038 and 0.014 $ mm^{2} $ of silicon area while consuming just 9.1 and 7.94 mW, respectively. The second version is an inductorless, smaller, and optimized version of the first one. Post-layout simulations in the temperature range of −40 to 125 °C show a good trade-off between noise and power-consumption across the frequency span with an average noise figure of 3.8 dB and a minimum transconductance of 41.5 mS over the entire band. Performance variations were estimated at 2 GHz with Monte Carlo analysis. Wideband (dpeaa)DE-He213 Noise reduction (dpeaa)DE-He213 Low-noise amplifier (LNA) (dpeaa)DE-He213 Low-noise transconductance amplifier (LNTA) (dpeaa)DE-He213 CMOS (dpeaa)DE-He213 Bampi, Sergio verfasserin aut Fabris, Eric verfasserin aut Enthalten in Analog integrated circuits and signal processing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 89(2016), 3 vom: 28. Juli, Seite 585-592 (DE-627)271348925 (DE-600)1479772-0 1573-1979 nnns volume:89 year:2016 number:3 day:28 month:07 pages:585-592 https://dx.doi.org/10.1007/s10470-016-0802-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 ASE 53.73 ASE AR 89 2016 3 28 07 585-592
language	English
source	Enthalten in Analog integrated circuits and signal processing 89(2016), 3 vom: 28. Juli, Seite 585-592 volume:89 year:2016 number:3 day:28 month:07 pages:585-592
sourceStr	Enthalten in Analog integrated circuits and signal processing 89(2016), 3 vom: 28. Juli, Seite 585-592 volume:89 year:2016 number:3 day:28 month:07 pages:585-592
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Wideband Noise reduction Low-noise amplifier (LNA) Low-noise transconductance amplifier (LNTA) CMOS
dewey-raw	004
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container_title	Analog integrated circuits and signal processing
authorswithroles_txt_mv	Cordova, David @@aut@@ Bampi, Sergio @@aut@@ Fabris, Eric @@aut@@
publishDateDaySort_date	2016-07-28T00:00:00Z
hierarchy_top_id	271348925
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language_de	englisch
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author	Cordova, David
spellingShingle	Cordova, David ddc 004 bkl 53.55 bkl 53.73 misc Wideband misc Noise reduction misc Low-noise amplifier (LNA) misc Low-noise transconductance amplifier (LNTA) misc CMOS A CMOS low noise transconductance amplifier for 1–6 GHz bands
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topic_title	004 ASE 53.55 bkl 53.73 bkl A CMOS low noise transconductance amplifier for 1–6 GHz bands Wideband (dpeaa)DE-He213 Noise reduction (dpeaa)DE-He213 Low-noise amplifier (LNA) (dpeaa)DE-He213 Low-noise transconductance amplifier (LNTA) (dpeaa)DE-He213 CMOS (dpeaa)DE-He213
topic	ddc 004 bkl 53.55 bkl 53.73 misc Wideband misc Noise reduction misc Low-noise amplifier (LNA) misc Low-noise transconductance amplifier (LNTA) misc CMOS
topic_unstemmed	ddc 004 bkl 53.55 bkl 53.73 misc Wideband misc Noise reduction misc Low-noise amplifier (LNA) misc Low-noise transconductance amplifier (LNTA) misc CMOS
topic_browse	ddc 004 bkl 53.55 bkl 53.73 misc Wideband misc Noise reduction misc Low-noise amplifier (LNA) misc Low-noise transconductance amplifier (LNTA) misc CMOS
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title	A CMOS low noise transconductance amplifier for 1–6 GHz bands
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title_full	A CMOS low noise transconductance amplifier for 1–6 GHz bands
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title_sort	cmos low noise transconductance amplifier for 1–6 ghz bands
title_auth	A CMOS low noise transconductance amplifier for 1–6 GHz bands
abstract	Abstract The linearity and noise requirements in multi-band multi-standard applications make the design of RF CMOS circuits a very challenging task. A low noise transconductance amplifier (LNTA) in 130 nm CMOS technology that operates between 1 and 6 GHz is presented. The LNTA is based on a shunt-feedback (SFB) amplifier with current-reuse scheme and employing the noise-canceling technique used in low-noise amplifier designs for wideband input matching. Two versions of the LNTA were designed in a 130 nm CMOS process and occupy 0.038 and 0.014 $ mm^{2} $ of silicon area while consuming just 9.1 and 7.94 mW, respectively. The second version is an inductorless, smaller, and optimized version of the first one. Post-layout simulations in the temperature range of −40 to 125 °C show a good trade-off between noise and power-consumption across the frequency span with an average noise figure of 3.8 dB and a minimum transconductance of 41.5 mS over the entire band. Performance variations were estimated at 2 GHz with Monte Carlo analysis.
abstractGer	Abstract The linearity and noise requirements in multi-band multi-standard applications make the design of RF CMOS circuits a very challenging task. A low noise transconductance amplifier (LNTA) in 130 nm CMOS technology that operates between 1 and 6 GHz is presented. The LNTA is based on a shunt-feedback (SFB) amplifier with current-reuse scheme and employing the noise-canceling technique used in low-noise amplifier designs for wideband input matching. Two versions of the LNTA were designed in a 130 nm CMOS process and occupy 0.038 and 0.014 $ mm^{2} $ of silicon area while consuming just 9.1 and 7.94 mW, respectively. The second version is an inductorless, smaller, and optimized version of the first one. Post-layout simulations in the temperature range of −40 to 125 °C show a good trade-off between noise and power-consumption across the frequency span with an average noise figure of 3.8 dB and a minimum transconductance of 41.5 mS over the entire band. Performance variations were estimated at 2 GHz with Monte Carlo analysis.
abstract_unstemmed	Abstract The linearity and noise requirements in multi-band multi-standard applications make the design of RF CMOS circuits a very challenging task. A low noise transconductance amplifier (LNTA) in 130 nm CMOS technology that operates between 1 and 6 GHz is presented. The LNTA is based on a shunt-feedback (SFB) amplifier with current-reuse scheme and employing the noise-canceling technique used in low-noise amplifier designs for wideband input matching. Two versions of the LNTA were designed in a 130 nm CMOS process and occupy 0.038 and 0.014 $ mm^{2} $ of silicon area while consuming just 9.1 and 7.94 mW, respectively. The second version is an inductorless, smaller, and optimized version of the first one. Post-layout simulations in the temperature range of −40 to 125 °C show a good trade-off between noise and power-consumption across the frequency span with an average noise figure of 3.8 dB and a minimum transconductance of 41.5 mS over the entire band. Performance variations were estimated at 2 GHz with Monte Carlo analysis.
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title_short	A CMOS low noise transconductance amplifier for 1–6 GHz bands
url	https://dx.doi.org/10.1007/s10470-016-0802-5
remote_bool	true
author2	Bampi, Sergio Fabris, Eric
author2Str	Bampi, Sergio Fabris, Eric
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doi_str	10.1007/s10470-016-0802-5
up_date	2024-07-03T15:23:28.149Z
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A CMOS low noise transconductance amplifier for 1–6 GHz bands

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