Design of a 3-bit digital control oscillator (DCO) using IMOS varactor tuning
Abstract This paper presents a three-bit digital controlled oscillator (DCO) with three-stage ring topology. The proposed DCO circuit has been realized in TSMC 0.18-μm CMOS technology. DCO circuit has been designed with NAND gate based inverter delay cell for low power consumption and a digitally co...
Ausführliche Beschreibung
Autor*in: |
Dwivedi, Dileep [verfasserIn] Kumar, Manoj [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2019 |
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Schlagwörter: |
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Übergeordnetes Werk: |
Enthalten in: Analog integrated circuits and signal processing - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991, 100(2019), 3 vom: 19. Juli, Seite 613-620 |
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Übergeordnetes Werk: |
volume:100 ; year:2019 ; number:3 ; day:19 ; month:07 ; pages:613-620 |
Links: |
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DOI / URN: |
10.1007/s10470-019-01506-x |
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Katalog-ID: |
SPR010330356 |
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100 | 1 | |a Dwivedi, Dileep |e verfasserin |4 aut | |
245 | 1 | 0 | |a Design of a 3-bit digital control oscillator (DCO) using IMOS varactor tuning |
264 | 1 | |c 2019 | |
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520 | |a Abstract This paper presents a three-bit digital controlled oscillator (DCO) with three-stage ring topology. The proposed DCO circuit has been realized in TSMC 0.18-μm CMOS technology. DCO circuit has been designed with NAND gate based inverter delay cell for low power consumption and a digitally controlled load element is added at the output node of inverter to control the tuning range of proposed DCO circuit. Load element of DCO circuit has been implemented using three IMOS varactors to provide a better frequency tuning capability at low supply voltage ($ V_{dd} $). The digital control bit varies the driving current across the load element that causes to change the oscillation frequency of proposed DCO. A tunable range of frequency from 0.818 to 0.872 GHz has been obtained with different combination of digital control bit with $ V_{dd} $ of 1.8 V. Effect of $ V_{dd} $ variations has also been observed. For control bits CBA = ‘000’ the proposed DCO operates from 0.711 to 1.278 GHz with $ V_{dd} $ variations from 1.6 to 3 V. Further, at control bits CBA = ‘111’, DCO oscillates form 0.755 to 1.296 GHz with $ V_{dd} $ variation. The proposed DCO shows a phase noise of − 101.24 dBc/Hz at an offset of 1 MHz from carrier frequency with 0.248 mW power consumption at 0.872 GHz operating frequency. Figure of merit for the proposed DCO circuit is 166.10 dBc/Hz. | ||
650 | 4 | |a Delay cell |7 (dpeaa)DE-He213 | |
650 | 4 | |a Digital controlled oscillator (DCO) |7 (dpeaa)DE-He213 | |
650 | 4 | |a IMOS varactor |7 (dpeaa)DE-He213 | |
650 | 4 | |a NAND gate |7 (dpeaa)DE-He213 | |
650 | 4 | |a Phase noise |7 (dpeaa)DE-He213 | |
700 | 1 | |a Kumar, Manoj |e verfasserin |4 aut | |
773 | 0 | 8 | |i Enthalten in |t Analog integrated circuits and signal processing |d Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 |g 100(2019), 3 vom: 19. Juli, Seite 613-620 |w (DE-627)271348925 |w (DE-600)1479772-0 |x 1573-1979 |7 nnns |
773 | 1 | 8 | |g volume:100 |g year:2019 |g number:3 |g day:19 |g month:07 |g pages:613-620 |
856 | 4 | 0 | |u https://dx.doi.org/10.1007/s10470-019-01506-x |z lizenzpflichtig |3 Volltext |
912 | |a GBV_USEFLAG_A | ||
912 | |a SYSFLAG_A | ||
912 | |a GBV_SPRINGER | ||
912 | |a GBV_ILN_11 | ||
912 | |a GBV_ILN_20 | ||
912 | |a GBV_ILN_22 | ||
912 | |a GBV_ILN_23 | ||
912 | |a GBV_ILN_24 | ||
912 | |a GBV_ILN_31 | ||
912 | |a GBV_ILN_32 | ||
912 | |a GBV_ILN_39 | ||
912 | |a GBV_ILN_40 | ||
912 | |a GBV_ILN_60 | ||
912 | |a GBV_ILN_62 | ||
912 | |a GBV_ILN_63 | ||
912 | |a GBV_ILN_69 | ||
912 | |a GBV_ILN_70 | ||
912 | |a GBV_ILN_73 | ||
912 | |a GBV_ILN_74 | ||
912 | |a GBV_ILN_90 | ||
912 | |a GBV_ILN_95 | ||
912 | |a GBV_ILN_100 | ||
912 | |a GBV_ILN_101 | ||
912 | |a GBV_ILN_105 | ||
912 | |a GBV_ILN_110 | ||
912 | |a GBV_ILN_120 | ||
912 | |a GBV_ILN_138 | ||
912 | |a GBV_ILN_150 | ||
912 | |a GBV_ILN_151 | ||
912 | |a GBV_ILN_152 | ||
912 | |a GBV_ILN_161 | ||
912 | |a GBV_ILN_170 | ||
912 | |a GBV_ILN_171 | ||
912 | |a GBV_ILN_187 | ||
912 | |a GBV_ILN_213 | ||
912 | |a GBV_ILN_224 | ||
912 | |a GBV_ILN_230 | ||
912 | |a GBV_ILN_250 | ||
912 | |a GBV_ILN_281 | ||
912 | |a GBV_ILN_285 | ||
912 | |a GBV_ILN_293 | ||
912 | |a GBV_ILN_370 | ||
912 | |a GBV_ILN_602 | ||
912 | |a GBV_ILN_636 | ||
912 | |a GBV_ILN_702 | ||
912 | |a GBV_ILN_2001 | ||
912 | |a GBV_ILN_2003 | ||
912 | |a GBV_ILN_2004 | ||
912 | |a GBV_ILN_2005 | ||
912 | |a GBV_ILN_2006 | ||
912 | |a GBV_ILN_2007 | ||
912 | |a GBV_ILN_2008 | ||
912 | |a GBV_ILN_2009 | ||
912 | |a GBV_ILN_2010 | ||
912 | |a GBV_ILN_2011 | ||
912 | |a GBV_ILN_2014 | ||
912 | |a GBV_ILN_2015 | ||
912 | |a GBV_ILN_2020 | ||
912 | |a GBV_ILN_2021 | ||
912 | |a GBV_ILN_2025 | ||
912 | |a GBV_ILN_2026 | ||
912 | |a GBV_ILN_2027 | ||
912 | |a GBV_ILN_2031 | ||
912 | |a GBV_ILN_2034 | ||
912 | |a GBV_ILN_2037 | ||
912 | |a GBV_ILN_2038 | ||
912 | |a GBV_ILN_2039 | ||
912 | |a GBV_ILN_2044 | ||
912 | |a GBV_ILN_2048 | ||
912 | |a GBV_ILN_2049 | ||
912 | |a GBV_ILN_2050 | ||
912 | |a GBV_ILN_2055 | ||
912 | |a GBV_ILN_2057 | ||
912 | |a GBV_ILN_2059 | ||
912 | |a GBV_ILN_2061 | ||
912 | |a GBV_ILN_2064 | ||
912 | |a GBV_ILN_2065 | ||
912 | |a GBV_ILN_2068 | ||
912 | |a GBV_ILN_2070 | ||
912 | |a GBV_ILN_2086 | ||
912 | |a GBV_ILN_2088 | ||
912 | |a GBV_ILN_2093 | ||
912 | |a GBV_ILN_2106 | ||
912 | |a GBV_ILN_2107 | ||
912 | |a GBV_ILN_2108 | ||
912 | |a GBV_ILN_2110 | ||
912 | |a GBV_ILN_2111 | ||
912 | |a GBV_ILN_2112 | ||
912 | |a GBV_ILN_2113 | ||
912 | |a GBV_ILN_2116 | ||
912 | |a GBV_ILN_2118 | ||
912 | |a GBV_ILN_2119 | ||
912 | |a GBV_ILN_2122 | ||
912 | |a GBV_ILN_2129 | ||
912 | |a GBV_ILN_2143 | ||
912 | |a GBV_ILN_2144 | ||
912 | |a GBV_ILN_2147 | ||
912 | |a GBV_ILN_2148 | ||
912 | |a GBV_ILN_2152 | ||
912 | |a GBV_ILN_2153 | ||
912 | |a GBV_ILN_2188 | ||
912 | |a GBV_ILN_2190 | ||
912 | |a GBV_ILN_2232 | ||
912 | |a GBV_ILN_2336 | ||
912 | |a GBV_ILN_2446 | ||
912 | |a GBV_ILN_2470 | ||
912 | |a GBV_ILN_2472 | ||
912 | |a GBV_ILN_2507 | ||
912 | |a GBV_ILN_2522 | ||
912 | |a GBV_ILN_2548 | ||
912 | |a GBV_ILN_4035 | ||
912 | |a GBV_ILN_4037 | ||
912 | |a GBV_ILN_4046 | ||
912 | |a GBV_ILN_4112 | ||
912 | |a GBV_ILN_4125 | ||
912 | |a GBV_ILN_4242 | ||
912 | |a GBV_ILN_4246 | ||
912 | |a GBV_ILN_4249 | ||
912 | |a GBV_ILN_4251 | ||
912 | |a GBV_ILN_4305 | ||
912 | |a GBV_ILN_4306 | ||
912 | |a GBV_ILN_4307 | ||
912 | |a GBV_ILN_4313 | ||
912 | |a GBV_ILN_4322 | ||
912 | |a GBV_ILN_4323 | ||
912 | |a GBV_ILN_4324 | ||
912 | |a GBV_ILN_4325 | ||
912 | |a GBV_ILN_4326 | ||
912 | |a GBV_ILN_4333 | ||
912 | |a GBV_ILN_4334 | ||
912 | |a GBV_ILN_4335 | ||
912 | |a GBV_ILN_4336 | ||
912 | |a GBV_ILN_4338 | ||
912 | |a GBV_ILN_4393 | ||
912 | |a GBV_ILN_4700 | ||
936 | b | k | |a 53.55 |q ASE |
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951 | |a AR | ||
952 | |d 100 |j 2019 |e 3 |b 19 |c 07 |h 613-620 |
author_variant |
d d dd m k mk |
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article:15731979:2019----::einf3idgtlotooclaodosn |
hierarchy_sort_str |
2019 |
bklnumber |
53.55 53.73 |
publishDate |
2019 |
allfields |
10.1007/s10470-019-01506-x doi (DE-627)SPR010330356 (SPR)s10470-019-01506-x-e DE-627 ger DE-627 rakwb eng 004 ASE 53.55 bkl 53.73 bkl Dwivedi, Dileep verfasserin aut Design of a 3-bit digital control oscillator (DCO) using IMOS varactor tuning 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper presents a three-bit digital controlled oscillator (DCO) with three-stage ring topology. The proposed DCO circuit has been realized in TSMC 0.18-μm CMOS technology. DCO circuit has been designed with NAND gate based inverter delay cell for low power consumption and a digitally controlled load element is added at the output node of inverter to control the tuning range of proposed DCO circuit. Load element of DCO circuit has been implemented using three IMOS varactors to provide a better frequency tuning capability at low supply voltage ($ V_{dd} $). The digital control bit varies the driving current across the load element that causes to change the oscillation frequency of proposed DCO. A tunable range of frequency from 0.818 to 0.872 GHz has been obtained with different combination of digital control bit with $ V_{dd} $ of 1.8 V. Effect of $ V_{dd} $ variations has also been observed. For control bits CBA = ‘000’ the proposed DCO operates from 0.711 to 1.278 GHz with $ V_{dd} $ variations from 1.6 to 3 V. Further, at control bits CBA = ‘111’, DCO oscillates form 0.755 to 1.296 GHz with $ V_{dd} $ variation. The proposed DCO shows a phase noise of − 101.24 dBc/Hz at an offset of 1 MHz from carrier frequency with 0.248 mW power consumption at 0.872 GHz operating frequency. Figure of merit for the proposed DCO circuit is 166.10 dBc/Hz. Delay cell (dpeaa)DE-He213 Digital controlled oscillator (DCO) (dpeaa)DE-He213 IMOS varactor (dpeaa)DE-He213 NAND gate (dpeaa)DE-He213 Phase noise (dpeaa)DE-He213 Kumar, Manoj verfasserin aut Enthalten in Analog integrated circuits and signal processing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 100(2019), 3 vom: 19. Juli, Seite 613-620 (DE-627)271348925 (DE-600)1479772-0 1573-1979 nnns volume:100 year:2019 number:3 day:19 month:07 pages:613-620 https://dx.doi.org/10.1007/s10470-019-01506-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 ASE 53.73 ASE AR 100 2019 3 19 07 613-620 |
spelling |
10.1007/s10470-019-01506-x doi (DE-627)SPR010330356 (SPR)s10470-019-01506-x-e DE-627 ger DE-627 rakwb eng 004 ASE 53.55 bkl 53.73 bkl Dwivedi, Dileep verfasserin aut Design of a 3-bit digital control oscillator (DCO) using IMOS varactor tuning 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper presents a three-bit digital controlled oscillator (DCO) with three-stage ring topology. The proposed DCO circuit has been realized in TSMC 0.18-μm CMOS technology. DCO circuit has been designed with NAND gate based inverter delay cell for low power consumption and a digitally controlled load element is added at the output node of inverter to control the tuning range of proposed DCO circuit. Load element of DCO circuit has been implemented using three IMOS varactors to provide a better frequency tuning capability at low supply voltage ($ V_{dd} $). The digital control bit varies the driving current across the load element that causes to change the oscillation frequency of proposed DCO. A tunable range of frequency from 0.818 to 0.872 GHz has been obtained with different combination of digital control bit with $ V_{dd} $ of 1.8 V. Effect of $ V_{dd} $ variations has also been observed. For control bits CBA = ‘000’ the proposed DCO operates from 0.711 to 1.278 GHz with $ V_{dd} $ variations from 1.6 to 3 V. Further, at control bits CBA = ‘111’, DCO oscillates form 0.755 to 1.296 GHz with $ V_{dd} $ variation. The proposed DCO shows a phase noise of − 101.24 dBc/Hz at an offset of 1 MHz from carrier frequency with 0.248 mW power consumption at 0.872 GHz operating frequency. Figure of merit for the proposed DCO circuit is 166.10 dBc/Hz. Delay cell (dpeaa)DE-He213 Digital controlled oscillator (DCO) (dpeaa)DE-He213 IMOS varactor (dpeaa)DE-He213 NAND gate (dpeaa)DE-He213 Phase noise (dpeaa)DE-He213 Kumar, Manoj verfasserin aut Enthalten in Analog integrated circuits and signal processing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 100(2019), 3 vom: 19. Juli, Seite 613-620 (DE-627)271348925 (DE-600)1479772-0 1573-1979 nnns volume:100 year:2019 number:3 day:19 month:07 pages:613-620 https://dx.doi.org/10.1007/s10470-019-01506-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 ASE 53.73 ASE AR 100 2019 3 19 07 613-620 |
allfields_unstemmed |
10.1007/s10470-019-01506-x doi (DE-627)SPR010330356 (SPR)s10470-019-01506-x-e DE-627 ger DE-627 rakwb eng 004 ASE 53.55 bkl 53.73 bkl Dwivedi, Dileep verfasserin aut Design of a 3-bit digital control oscillator (DCO) using IMOS varactor tuning 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper presents a three-bit digital controlled oscillator (DCO) with three-stage ring topology. The proposed DCO circuit has been realized in TSMC 0.18-μm CMOS technology. DCO circuit has been designed with NAND gate based inverter delay cell for low power consumption and a digitally controlled load element is added at the output node of inverter to control the tuning range of proposed DCO circuit. Load element of DCO circuit has been implemented using three IMOS varactors to provide a better frequency tuning capability at low supply voltage ($ V_{dd} $). The digital control bit varies the driving current across the load element that causes to change the oscillation frequency of proposed DCO. A tunable range of frequency from 0.818 to 0.872 GHz has been obtained with different combination of digital control bit with $ V_{dd} $ of 1.8 V. Effect of $ V_{dd} $ variations has also been observed. For control bits CBA = ‘000’ the proposed DCO operates from 0.711 to 1.278 GHz with $ V_{dd} $ variations from 1.6 to 3 V. Further, at control bits CBA = ‘111’, DCO oscillates form 0.755 to 1.296 GHz with $ V_{dd} $ variation. The proposed DCO shows a phase noise of − 101.24 dBc/Hz at an offset of 1 MHz from carrier frequency with 0.248 mW power consumption at 0.872 GHz operating frequency. Figure of merit for the proposed DCO circuit is 166.10 dBc/Hz. Delay cell (dpeaa)DE-He213 Digital controlled oscillator (DCO) (dpeaa)DE-He213 IMOS varactor (dpeaa)DE-He213 NAND gate (dpeaa)DE-He213 Phase noise (dpeaa)DE-He213 Kumar, Manoj verfasserin aut Enthalten in Analog integrated circuits and signal processing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 100(2019), 3 vom: 19. Juli, Seite 613-620 (DE-627)271348925 (DE-600)1479772-0 1573-1979 nnns volume:100 year:2019 number:3 day:19 month:07 pages:613-620 https://dx.doi.org/10.1007/s10470-019-01506-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 ASE 53.73 ASE AR 100 2019 3 19 07 613-620 |
allfieldsGer |
10.1007/s10470-019-01506-x doi (DE-627)SPR010330356 (SPR)s10470-019-01506-x-e DE-627 ger DE-627 rakwb eng 004 ASE 53.55 bkl 53.73 bkl Dwivedi, Dileep verfasserin aut Design of a 3-bit digital control oscillator (DCO) using IMOS varactor tuning 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper presents a three-bit digital controlled oscillator (DCO) with three-stage ring topology. The proposed DCO circuit has been realized in TSMC 0.18-μm CMOS technology. DCO circuit has been designed with NAND gate based inverter delay cell for low power consumption and a digitally controlled load element is added at the output node of inverter to control the tuning range of proposed DCO circuit. Load element of DCO circuit has been implemented using three IMOS varactors to provide a better frequency tuning capability at low supply voltage ($ V_{dd} $). The digital control bit varies the driving current across the load element that causes to change the oscillation frequency of proposed DCO. A tunable range of frequency from 0.818 to 0.872 GHz has been obtained with different combination of digital control bit with $ V_{dd} $ of 1.8 V. Effect of $ V_{dd} $ variations has also been observed. For control bits CBA = ‘000’ the proposed DCO operates from 0.711 to 1.278 GHz with $ V_{dd} $ variations from 1.6 to 3 V. Further, at control bits CBA = ‘111’, DCO oscillates form 0.755 to 1.296 GHz with $ V_{dd} $ variation. The proposed DCO shows a phase noise of − 101.24 dBc/Hz at an offset of 1 MHz from carrier frequency with 0.248 mW power consumption at 0.872 GHz operating frequency. Figure of merit for the proposed DCO circuit is 166.10 dBc/Hz. Delay cell (dpeaa)DE-He213 Digital controlled oscillator (DCO) (dpeaa)DE-He213 IMOS varactor (dpeaa)DE-He213 NAND gate (dpeaa)DE-He213 Phase noise (dpeaa)DE-He213 Kumar, Manoj verfasserin aut Enthalten in Analog integrated circuits and signal processing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 100(2019), 3 vom: 19. Juli, Seite 613-620 (DE-627)271348925 (DE-600)1479772-0 1573-1979 nnns volume:100 year:2019 number:3 day:19 month:07 pages:613-620 https://dx.doi.org/10.1007/s10470-019-01506-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 ASE 53.73 ASE AR 100 2019 3 19 07 613-620 |
allfieldsSound |
10.1007/s10470-019-01506-x doi (DE-627)SPR010330356 (SPR)s10470-019-01506-x-e DE-627 ger DE-627 rakwb eng 004 ASE 53.55 bkl 53.73 bkl Dwivedi, Dileep verfasserin aut Design of a 3-bit digital control oscillator (DCO) using IMOS varactor tuning 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper presents a three-bit digital controlled oscillator (DCO) with three-stage ring topology. The proposed DCO circuit has been realized in TSMC 0.18-μm CMOS technology. DCO circuit has been designed with NAND gate based inverter delay cell for low power consumption and a digitally controlled load element is added at the output node of inverter to control the tuning range of proposed DCO circuit. Load element of DCO circuit has been implemented using three IMOS varactors to provide a better frequency tuning capability at low supply voltage ($ V_{dd} $). The digital control bit varies the driving current across the load element that causes to change the oscillation frequency of proposed DCO. A tunable range of frequency from 0.818 to 0.872 GHz has been obtained with different combination of digital control bit with $ V_{dd} $ of 1.8 V. Effect of $ V_{dd} $ variations has also been observed. For control bits CBA = ‘000’ the proposed DCO operates from 0.711 to 1.278 GHz with $ V_{dd} $ variations from 1.6 to 3 V. Further, at control bits CBA = ‘111’, DCO oscillates form 0.755 to 1.296 GHz with $ V_{dd} $ variation. The proposed DCO shows a phase noise of − 101.24 dBc/Hz at an offset of 1 MHz from carrier frequency with 0.248 mW power consumption at 0.872 GHz operating frequency. Figure of merit for the proposed DCO circuit is 166.10 dBc/Hz. Delay cell (dpeaa)DE-He213 Digital controlled oscillator (DCO) (dpeaa)DE-He213 IMOS varactor (dpeaa)DE-He213 NAND gate (dpeaa)DE-He213 Phase noise (dpeaa)DE-He213 Kumar, Manoj verfasserin aut Enthalten in Analog integrated circuits and signal processing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 100(2019), 3 vom: 19. Juli, Seite 613-620 (DE-627)271348925 (DE-600)1479772-0 1573-1979 nnns volume:100 year:2019 number:3 day:19 month:07 pages:613-620 https://dx.doi.org/10.1007/s10470-019-01506-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 ASE 53.73 ASE AR 100 2019 3 19 07 613-620 |
language |
English |
source |
Enthalten in Analog integrated circuits and signal processing 100(2019), 3 vom: 19. Juli, Seite 613-620 volume:100 year:2019 number:3 day:19 month:07 pages:613-620 |
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Enthalten in Analog integrated circuits and signal processing 100(2019), 3 vom: 19. Juli, Seite 613-620 volume:100 year:2019 number:3 day:19 month:07 pages:613-620 |
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Delay cell Digital controlled oscillator (DCO) IMOS varactor NAND gate Phase noise |
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Analog integrated circuits and signal processing |
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Dwivedi, Dileep @@aut@@ Kumar, Manoj @@aut@@ |
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2019-07-19T00:00:00Z |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR010330356</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220110220052.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201005s2019 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10470-019-01506-x</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR010330356</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s10470-019-01506-x-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">004</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.55</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.73</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Dwivedi, Dileep</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Design of a 3-bit digital control oscillator (DCO) using IMOS varactor tuning</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract This paper presents a three-bit digital controlled oscillator (DCO) with three-stage ring topology. The proposed DCO circuit has been realized in TSMC 0.18-μm CMOS technology. DCO circuit has been designed with NAND gate based inverter delay cell for low power consumption and a digitally controlled load element is added at the output node of inverter to control the tuning range of proposed DCO circuit. Load element of DCO circuit has been implemented using three IMOS varactors to provide a better frequency tuning capability at low supply voltage ($ V_{dd} $). The digital control bit varies the driving current across the load element that causes to change the oscillation frequency of proposed DCO. A tunable range of frequency from 0.818 to 0.872 GHz has been obtained with different combination of digital control bit with $ V_{dd} $ of 1.8 V. Effect of $ V_{dd} $ variations has also been observed. For control bits CBA = ‘000’ the proposed DCO operates from 0.711 to 1.278 GHz with $ V_{dd} $ variations from 1.6 to 3 V. Further, at control bits CBA = ‘111’, DCO oscillates form 0.755 to 1.296 GHz with $ V_{dd} $ variation. The proposed DCO shows a phase noise of − 101.24 dBc/Hz at an offset of 1 MHz from carrier frequency with 0.248 mW power consumption at 0.872 GHz operating frequency. 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Dwivedi, Dileep |
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Dwivedi, Dileep ddc 004 bkl 53.55 bkl 53.73 misc Delay cell misc Digital controlled oscillator (DCO) misc IMOS varactor misc NAND gate misc Phase noise Design of a 3-bit digital control oscillator (DCO) using IMOS varactor tuning |
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004 ASE 53.55 bkl 53.73 bkl Design of a 3-bit digital control oscillator (DCO) using IMOS varactor tuning Delay cell (dpeaa)DE-He213 Digital controlled oscillator (DCO) (dpeaa)DE-He213 IMOS varactor (dpeaa)DE-He213 NAND gate (dpeaa)DE-He213 Phase noise (dpeaa)DE-He213 |
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ddc 004 bkl 53.55 bkl 53.73 misc Delay cell misc Digital controlled oscillator (DCO) misc IMOS varactor misc NAND gate misc Phase noise |
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ddc 004 bkl 53.55 bkl 53.73 misc Delay cell misc Digital controlled oscillator (DCO) misc IMOS varactor misc NAND gate misc Phase noise |
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Design of a 3-bit digital control oscillator (DCO) using IMOS varactor tuning |
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Design of a 3-bit digital control oscillator (DCO) using IMOS varactor tuning |
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design of a 3-bit digital control oscillator (dco) using imos varactor tuning |
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Design of a 3-bit digital control oscillator (DCO) using IMOS varactor tuning |
abstract |
Abstract This paper presents a three-bit digital controlled oscillator (DCO) with three-stage ring topology. The proposed DCO circuit has been realized in TSMC 0.18-μm CMOS technology. DCO circuit has been designed with NAND gate based inverter delay cell for low power consumption and a digitally controlled load element is added at the output node of inverter to control the tuning range of proposed DCO circuit. Load element of DCO circuit has been implemented using three IMOS varactors to provide a better frequency tuning capability at low supply voltage ($ V_{dd} $). The digital control bit varies the driving current across the load element that causes to change the oscillation frequency of proposed DCO. A tunable range of frequency from 0.818 to 0.872 GHz has been obtained with different combination of digital control bit with $ V_{dd} $ of 1.8 V. Effect of $ V_{dd} $ variations has also been observed. For control bits CBA = ‘000’ the proposed DCO operates from 0.711 to 1.278 GHz with $ V_{dd} $ variations from 1.6 to 3 V. Further, at control bits CBA = ‘111’, DCO oscillates form 0.755 to 1.296 GHz with $ V_{dd} $ variation. The proposed DCO shows a phase noise of − 101.24 dBc/Hz at an offset of 1 MHz from carrier frequency with 0.248 mW power consumption at 0.872 GHz operating frequency. Figure of merit for the proposed DCO circuit is 166.10 dBc/Hz. |
abstractGer |
Abstract This paper presents a three-bit digital controlled oscillator (DCO) with three-stage ring topology. The proposed DCO circuit has been realized in TSMC 0.18-μm CMOS technology. DCO circuit has been designed with NAND gate based inverter delay cell for low power consumption and a digitally controlled load element is added at the output node of inverter to control the tuning range of proposed DCO circuit. Load element of DCO circuit has been implemented using three IMOS varactors to provide a better frequency tuning capability at low supply voltage ($ V_{dd} $). The digital control bit varies the driving current across the load element that causes to change the oscillation frequency of proposed DCO. A tunable range of frequency from 0.818 to 0.872 GHz has been obtained with different combination of digital control bit with $ V_{dd} $ of 1.8 V. Effect of $ V_{dd} $ variations has also been observed. For control bits CBA = ‘000’ the proposed DCO operates from 0.711 to 1.278 GHz with $ V_{dd} $ variations from 1.6 to 3 V. Further, at control bits CBA = ‘111’, DCO oscillates form 0.755 to 1.296 GHz with $ V_{dd} $ variation. The proposed DCO shows a phase noise of − 101.24 dBc/Hz at an offset of 1 MHz from carrier frequency with 0.248 mW power consumption at 0.872 GHz operating frequency. Figure of merit for the proposed DCO circuit is 166.10 dBc/Hz. |
abstract_unstemmed |
Abstract This paper presents a three-bit digital controlled oscillator (DCO) with three-stage ring topology. The proposed DCO circuit has been realized in TSMC 0.18-μm CMOS technology. DCO circuit has been designed with NAND gate based inverter delay cell for low power consumption and a digitally controlled load element is added at the output node of inverter to control the tuning range of proposed DCO circuit. Load element of DCO circuit has been implemented using three IMOS varactors to provide a better frequency tuning capability at low supply voltage ($ V_{dd} $). The digital control bit varies the driving current across the load element that causes to change the oscillation frequency of proposed DCO. A tunable range of frequency from 0.818 to 0.872 GHz has been obtained with different combination of digital control bit with $ V_{dd} $ of 1.8 V. Effect of $ V_{dd} $ variations has also been observed. For control bits CBA = ‘000’ the proposed DCO operates from 0.711 to 1.278 GHz with $ V_{dd} $ variations from 1.6 to 3 V. Further, at control bits CBA = ‘111’, DCO oscillates form 0.755 to 1.296 GHz with $ V_{dd} $ variation. The proposed DCO shows a phase noise of − 101.24 dBc/Hz at an offset of 1 MHz from carrier frequency with 0.248 mW power consumption at 0.872 GHz operating frequency. Figure of merit for the proposed DCO circuit is 166.10 dBc/Hz. |
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container_issue |
3 |
title_short |
Design of a 3-bit digital control oscillator (DCO) using IMOS varactor tuning |
url |
https://dx.doi.org/10.1007/s10470-019-01506-x |
remote_bool |
true |
author2 |
Kumar, Manoj |
author2Str |
Kumar, Manoj |
ppnlink |
271348925 |
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hochschulschrift_bool |
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doi_str |
10.1007/s10470-019-01506-x |
up_date |
2024-07-03T15:25:24.910Z |
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score |
7.401374 |