Design a monolithic wideband balun for mixers and amplifiers based on SiGe BiCMOS technology
Abstract In this paper a monolithic balun for mixers and amplifiers based on BiCMOS Technology presented on chip integrated balun based on 0.25 μm SiGe BiCMOS technology. monolithic microwave integrated circuit is designed by the passive double-balanced mixers with the help of resistive field effect...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Khan, Muneer [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2019 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Analog integrated circuits and signal processing - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991, 101(2019), 2 vom: 30. Sept., Seite 237-242 |
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| Übergeordnetes Werk: |
volume:101 ; year:2019 ; number:2 ; day:30 ; month:09 ; pages:237-242 |
| Links: |
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| DOI / URN: |
10.1007/s10470-019-01543-6 |
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| Katalog-ID: |
SPR010330712 |
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| 100 | 1 | |a Khan, Muneer |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Design a monolithic wideband balun for mixers and amplifiers based on SiGe BiCMOS technology |
| 264 | 1 | |c 2019 | |
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| 520 | |a Abstract In this paper a monolithic balun for mixers and amplifiers based on BiCMOS Technology presented on chip integrated balun based on 0.25 μm SiGe BiCMOS technology. monolithic microwave integrated circuit is designed by the passive double-balanced mixers with the help of resistive field effect transistor topology. The formation of integrated monolithic balun is a cross coupled and asymmetric. The performance of monolithic balun is measured over the range of 0–5 GHz frequency range. This balun is having the specification of conversion gain Gc is greater than − 10 dB, RF IC isolation is greater than 25 dB, LO–RF and LO–IF isolation is greater than 40 dB, return losses at IF and RF ports are better than − 10 dB. In terms of dimensions we uses the length and width of the periphery 800 × 600 μm. For layer conductance we uses the substrate as Silicon TopMetal2. | ||
| 650 | 4 | |a SiGe BiCMOS |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Double-balanced mixer |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Monolithic balun |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a FET technology |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a MMIC |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Silicon substrate |7 (dpeaa)DE-He213 | |
| 773 | 0 | 8 | |i Enthalten in |t Analog integrated circuits and signal processing |d Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 |g 101(2019), 2 vom: 30. Sept., Seite 237-242 |w (DE-627)271348925 |w (DE-600)1479772-0 |x 1573-1979 |7 nnns |
| 773 | 1 | 8 | |g volume:101 |g year:2019 |g number:2 |g day:30 |g month:09 |g pages:237-242 |
| 856 | 4 | 0 | |u https://dx.doi.org/10.1007/s10470-019-01543-6 |z lizenzpflichtig |3 Volltext |
| 912 | |a GBV_USEFLAG_A | ||
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| 912 | |a GBV_ILN_11 | ||
| 912 | |a GBV_ILN_20 | ||
| 912 | |a GBV_ILN_22 | ||
| 912 | |a GBV_ILN_23 | ||
| 912 | |a GBV_ILN_24 | ||
| 912 | |a GBV_ILN_31 | ||
| 912 | |a GBV_ILN_32 | ||
| 912 | |a GBV_ILN_39 | ||
| 912 | |a GBV_ILN_40 | ||
| 912 | |a GBV_ILN_60 | ||
| 912 | |a GBV_ILN_62 | ||
| 912 | |a GBV_ILN_63 | ||
| 912 | |a GBV_ILN_69 | ||
| 912 | |a GBV_ILN_70 | ||
| 912 | |a GBV_ILN_73 | ||
| 912 | |a GBV_ILN_74 | ||
| 912 | |a GBV_ILN_90 | ||
| 912 | |a GBV_ILN_95 | ||
| 912 | |a GBV_ILN_100 | ||
| 912 | |a GBV_ILN_101 | ||
| 912 | |a GBV_ILN_105 | ||
| 912 | |a GBV_ILN_110 | ||
| 912 | |a GBV_ILN_120 | ||
| 912 | |a GBV_ILN_138 | ||
| 912 | |a GBV_ILN_150 | ||
| 912 | |a GBV_ILN_151 | ||
| 912 | |a GBV_ILN_152 | ||
| 912 | |a GBV_ILN_161 | ||
| 912 | |a GBV_ILN_170 | ||
| 912 | |a GBV_ILN_171 | ||
| 912 | |a GBV_ILN_187 | ||
| 912 | |a GBV_ILN_213 | ||
| 912 | |a GBV_ILN_224 | ||
| 912 | |a GBV_ILN_230 | ||
| 912 | |a GBV_ILN_250 | ||
| 912 | |a GBV_ILN_281 | ||
| 912 | |a GBV_ILN_285 | ||
| 912 | |a GBV_ILN_293 | ||
| 912 | |a GBV_ILN_370 | ||
| 912 | |a GBV_ILN_602 | ||
| 912 | |a GBV_ILN_636 | ||
| 912 | |a GBV_ILN_702 | ||
| 912 | |a GBV_ILN_2001 | ||
| 912 | |a GBV_ILN_2003 | ||
| 912 | |a GBV_ILN_2004 | ||
| 912 | |a GBV_ILN_2005 | ||
| 912 | |a GBV_ILN_2006 | ||
| 912 | |a GBV_ILN_2007 | ||
| 912 | |a GBV_ILN_2008 | ||
| 912 | |a GBV_ILN_2009 | ||
| 912 | |a GBV_ILN_2010 | ||
| 912 | |a GBV_ILN_2011 | ||
| 912 | |a GBV_ILN_2014 | ||
| 912 | |a GBV_ILN_2015 | ||
| 912 | |a GBV_ILN_2020 | ||
| 912 | |a GBV_ILN_2021 | ||
| 912 | |a GBV_ILN_2025 | ||
| 912 | |a GBV_ILN_2026 | ||
| 912 | |a GBV_ILN_2027 | ||
| 912 | |a GBV_ILN_2031 | ||
| 912 | |a GBV_ILN_2034 | ||
| 912 | |a GBV_ILN_2037 | ||
| 912 | |a GBV_ILN_2038 | ||
| 912 | |a GBV_ILN_2039 | ||
| 912 | |a GBV_ILN_2044 | ||
| 912 | |a GBV_ILN_2048 | ||
| 912 | |a GBV_ILN_2049 | ||
| 912 | |a GBV_ILN_2050 | ||
| 912 | |a GBV_ILN_2055 | ||
| 912 | |a GBV_ILN_2057 | ||
| 912 | |a GBV_ILN_2059 | ||
| 912 | |a GBV_ILN_2061 | ||
| 912 | |a GBV_ILN_2064 | ||
| 912 | |a GBV_ILN_2065 | ||
| 912 | |a GBV_ILN_2068 | ||
| 912 | |a GBV_ILN_2070 | ||
| 912 | |a GBV_ILN_2086 | ||
| 912 | |a GBV_ILN_2088 | ||
| 912 | |a GBV_ILN_2093 | ||
| 912 | |a GBV_ILN_2106 | ||
| 912 | |a GBV_ILN_2107 | ||
| 912 | |a GBV_ILN_2108 | ||
| 912 | |a GBV_ILN_2110 | ||
| 912 | |a GBV_ILN_2111 | ||
| 912 | |a GBV_ILN_2112 | ||
| 912 | |a GBV_ILN_2113 | ||
| 912 | |a GBV_ILN_2116 | ||
| 912 | |a GBV_ILN_2118 | ||
| 912 | |a GBV_ILN_2119 | ||
| 912 | |a GBV_ILN_2122 | ||
| 912 | |a GBV_ILN_2129 | ||
| 912 | |a GBV_ILN_2143 | ||
| 912 | |a GBV_ILN_2144 | ||
| 912 | |a GBV_ILN_2147 | ||
| 912 | |a GBV_ILN_2148 | ||
| 912 | |a GBV_ILN_2152 | ||
| 912 | |a GBV_ILN_2153 | ||
| 912 | |a GBV_ILN_2188 | ||
| 912 | |a GBV_ILN_2190 | ||
| 912 | |a GBV_ILN_2232 | ||
| 912 | |a GBV_ILN_2336 | ||
| 912 | |a GBV_ILN_2446 | ||
| 912 | |a GBV_ILN_2470 | ||
| 912 | |a GBV_ILN_2472 | ||
| 912 | |a GBV_ILN_2507 | ||
| 912 | |a GBV_ILN_2522 | ||
| 912 | |a GBV_ILN_2548 | ||
| 912 | |a GBV_ILN_4035 | ||
| 912 | |a GBV_ILN_4037 | ||
| 912 | |a GBV_ILN_4046 | ||
| 912 | |a GBV_ILN_4112 | ||
| 912 | |a GBV_ILN_4125 | ||
| 912 | |a GBV_ILN_4242 | ||
| 912 | |a GBV_ILN_4246 | ||
| 912 | |a GBV_ILN_4249 | ||
| 912 | |a GBV_ILN_4251 | ||
| 912 | |a GBV_ILN_4305 | ||
| 912 | |a GBV_ILN_4306 | ||
| 912 | |a GBV_ILN_4307 | ||
| 912 | |a GBV_ILN_4313 | ||
| 912 | |a GBV_ILN_4322 | ||
| 912 | |a GBV_ILN_4323 | ||
| 912 | |a GBV_ILN_4324 | ||
| 912 | |a GBV_ILN_4325 | ||
| 912 | |a GBV_ILN_4326 | ||
| 912 | |a GBV_ILN_4333 | ||
| 912 | |a GBV_ILN_4334 | ||
| 912 | |a GBV_ILN_4335 | ||
| 912 | |a GBV_ILN_4336 | ||
| 912 | |a GBV_ILN_4338 | ||
| 912 | |a GBV_ILN_4393 | ||
| 912 | |a GBV_ILN_4700 | ||
| 936 | b | k | |a 53.55 |q ASE |
| 936 | b | k | |a 53.73 |q ASE |
| 951 | |a AR | ||
| 952 | |d 101 |j 2019 |e 2 |b 30 |c 09 |h 237-242 | ||
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article:15731979:2019----::einmnltiwdbnblnomxradmlfesae |
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53.55 53.73 |
| publishDate |
2019 |
| allfields |
10.1007/s10470-019-01543-6 doi (DE-627)SPR010330712 (SPR)s10470-019-01543-6-e DE-627 ger DE-627 rakwb eng 004 ASE 53.55 bkl 53.73 bkl Khan, Muneer verfasserin aut Design a monolithic wideband balun for mixers and amplifiers based on SiGe BiCMOS technology 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this paper a monolithic balun for mixers and amplifiers based on BiCMOS Technology presented on chip integrated balun based on 0.25 μm SiGe BiCMOS technology. monolithic microwave integrated circuit is designed by the passive double-balanced mixers with the help of resistive field effect transistor topology. The formation of integrated monolithic balun is a cross coupled and asymmetric. The performance of monolithic balun is measured over the range of 0–5 GHz frequency range. This balun is having the specification of conversion gain Gc is greater than − 10 dB, RF IC isolation is greater than 25 dB, LO–RF and LO–IF isolation is greater than 40 dB, return losses at IF and RF ports are better than − 10 dB. In terms of dimensions we uses the length and width of the periphery 800 × 600 μm. For layer conductance we uses the substrate as Silicon TopMetal2. SiGe BiCMOS (dpeaa)DE-He213 Double-balanced mixer (dpeaa)DE-He213 Monolithic balun (dpeaa)DE-He213 FET technology (dpeaa)DE-He213 MMIC (dpeaa)DE-He213 Silicon substrate (dpeaa)DE-He213 Enthalten in Analog integrated circuits and signal processing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 101(2019), 2 vom: 30. Sept., Seite 237-242 (DE-627)271348925 (DE-600)1479772-0 1573-1979 nnns volume:101 year:2019 number:2 day:30 month:09 pages:237-242 https://dx.doi.org/10.1007/s10470-019-01543-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 ASE 53.73 ASE AR 101 2019 2 30 09 237-242 |
| spelling |
10.1007/s10470-019-01543-6 doi (DE-627)SPR010330712 (SPR)s10470-019-01543-6-e DE-627 ger DE-627 rakwb eng 004 ASE 53.55 bkl 53.73 bkl Khan, Muneer verfasserin aut Design a monolithic wideband balun for mixers and amplifiers based on SiGe BiCMOS technology 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this paper a monolithic balun for mixers and amplifiers based on BiCMOS Technology presented on chip integrated balun based on 0.25 μm SiGe BiCMOS technology. monolithic microwave integrated circuit is designed by the passive double-balanced mixers with the help of resistive field effect transistor topology. The formation of integrated monolithic balun is a cross coupled and asymmetric. The performance of monolithic balun is measured over the range of 0–5 GHz frequency range. This balun is having the specification of conversion gain Gc is greater than − 10 dB, RF IC isolation is greater than 25 dB, LO–RF and LO–IF isolation is greater than 40 dB, return losses at IF and RF ports are better than − 10 dB. In terms of dimensions we uses the length and width of the periphery 800 × 600 μm. For layer conductance we uses the substrate as Silicon TopMetal2. SiGe BiCMOS (dpeaa)DE-He213 Double-balanced mixer (dpeaa)DE-He213 Monolithic balun (dpeaa)DE-He213 FET technology (dpeaa)DE-He213 MMIC (dpeaa)DE-He213 Silicon substrate (dpeaa)DE-He213 Enthalten in Analog integrated circuits and signal processing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 101(2019), 2 vom: 30. Sept., Seite 237-242 (DE-627)271348925 (DE-600)1479772-0 1573-1979 nnns volume:101 year:2019 number:2 day:30 month:09 pages:237-242 https://dx.doi.org/10.1007/s10470-019-01543-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 ASE 53.73 ASE AR 101 2019 2 30 09 237-242 |
| allfields_unstemmed |
10.1007/s10470-019-01543-6 doi (DE-627)SPR010330712 (SPR)s10470-019-01543-6-e DE-627 ger DE-627 rakwb eng 004 ASE 53.55 bkl 53.73 bkl Khan, Muneer verfasserin aut Design a monolithic wideband balun for mixers and amplifiers based on SiGe BiCMOS technology 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this paper a monolithic balun for mixers and amplifiers based on BiCMOS Technology presented on chip integrated balun based on 0.25 μm SiGe BiCMOS technology. monolithic microwave integrated circuit is designed by the passive double-balanced mixers with the help of resistive field effect transistor topology. The formation of integrated monolithic balun is a cross coupled and asymmetric. The performance of monolithic balun is measured over the range of 0–5 GHz frequency range. This balun is having the specification of conversion gain Gc is greater than − 10 dB, RF IC isolation is greater than 25 dB, LO–RF and LO–IF isolation is greater than 40 dB, return losses at IF and RF ports are better than − 10 dB. In terms of dimensions we uses the length and width of the periphery 800 × 600 μm. For layer conductance we uses the substrate as Silicon TopMetal2. SiGe BiCMOS (dpeaa)DE-He213 Double-balanced mixer (dpeaa)DE-He213 Monolithic balun (dpeaa)DE-He213 FET technology (dpeaa)DE-He213 MMIC (dpeaa)DE-He213 Silicon substrate (dpeaa)DE-He213 Enthalten in Analog integrated circuits and signal processing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 101(2019), 2 vom: 30. Sept., Seite 237-242 (DE-627)271348925 (DE-600)1479772-0 1573-1979 nnns volume:101 year:2019 number:2 day:30 month:09 pages:237-242 https://dx.doi.org/10.1007/s10470-019-01543-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 ASE 53.73 ASE AR 101 2019 2 30 09 237-242 |
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10.1007/s10470-019-01543-6 doi (DE-627)SPR010330712 (SPR)s10470-019-01543-6-e DE-627 ger DE-627 rakwb eng 004 ASE 53.55 bkl 53.73 bkl Khan, Muneer verfasserin aut Design a monolithic wideband balun for mixers and amplifiers based on SiGe BiCMOS technology 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this paper a monolithic balun for mixers and amplifiers based on BiCMOS Technology presented on chip integrated balun based on 0.25 μm SiGe BiCMOS technology. monolithic microwave integrated circuit is designed by the passive double-balanced mixers with the help of resistive field effect transistor topology. The formation of integrated monolithic balun is a cross coupled and asymmetric. The performance of monolithic balun is measured over the range of 0–5 GHz frequency range. This balun is having the specification of conversion gain Gc is greater than − 10 dB, RF IC isolation is greater than 25 dB, LO–RF and LO–IF isolation is greater than 40 dB, return losses at IF and RF ports are better than − 10 dB. In terms of dimensions we uses the length and width of the periphery 800 × 600 μm. For layer conductance we uses the substrate as Silicon TopMetal2. SiGe BiCMOS (dpeaa)DE-He213 Double-balanced mixer (dpeaa)DE-He213 Monolithic balun (dpeaa)DE-He213 FET technology (dpeaa)DE-He213 MMIC (dpeaa)DE-He213 Silicon substrate (dpeaa)DE-He213 Enthalten in Analog integrated circuits and signal processing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 101(2019), 2 vom: 30. Sept., Seite 237-242 (DE-627)271348925 (DE-600)1479772-0 1573-1979 nnns volume:101 year:2019 number:2 day:30 month:09 pages:237-242 https://dx.doi.org/10.1007/s10470-019-01543-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 ASE 53.73 ASE AR 101 2019 2 30 09 237-242 |
| allfieldsSound |
10.1007/s10470-019-01543-6 doi (DE-627)SPR010330712 (SPR)s10470-019-01543-6-e DE-627 ger DE-627 rakwb eng 004 ASE 53.55 bkl 53.73 bkl Khan, Muneer verfasserin aut Design a monolithic wideband balun for mixers and amplifiers based on SiGe BiCMOS technology 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this paper a monolithic balun for mixers and amplifiers based on BiCMOS Technology presented on chip integrated balun based on 0.25 μm SiGe BiCMOS technology. monolithic microwave integrated circuit is designed by the passive double-balanced mixers with the help of resistive field effect transistor topology. The formation of integrated monolithic balun is a cross coupled and asymmetric. The performance of monolithic balun is measured over the range of 0–5 GHz frequency range. This balun is having the specification of conversion gain Gc is greater than − 10 dB, RF IC isolation is greater than 25 dB, LO–RF and LO–IF isolation is greater than 40 dB, return losses at IF and RF ports are better than − 10 dB. In terms of dimensions we uses the length and width of the periphery 800 × 600 μm. For layer conductance we uses the substrate as Silicon TopMetal2. SiGe BiCMOS (dpeaa)DE-He213 Double-balanced mixer (dpeaa)DE-He213 Monolithic balun (dpeaa)DE-He213 FET technology (dpeaa)DE-He213 MMIC (dpeaa)DE-He213 Silicon substrate (dpeaa)DE-He213 Enthalten in Analog integrated circuits and signal processing Dordrecht [u.a.] : Springer Science + Business Media B.V, 1991 101(2019), 2 vom: 30. Sept., Seite 237-242 (DE-627)271348925 (DE-600)1479772-0 1573-1979 nnns volume:101 year:2019 number:2 day:30 month:09 pages:237-242 https://dx.doi.org/10.1007/s10470-019-01543-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.55 ASE 53.73 ASE AR 101 2019 2 30 09 237-242 |
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Enthalten in Analog integrated circuits and signal processing 101(2019), 2 vom: 30. Sept., Seite 237-242 volume:101 year:2019 number:2 day:30 month:09 pages:237-242 |
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Enthalten in Analog integrated circuits and signal processing 101(2019), 2 vom: 30. Sept., Seite 237-242 volume:101 year:2019 number:2 day:30 month:09 pages:237-242 |
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SiGe BiCMOS Double-balanced mixer Monolithic balun FET technology MMIC Silicon substrate |
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Analog integrated circuits and signal processing |
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Khan, Muneer @@aut@@ |
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Khan, Muneer |
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Khan, Muneer ddc 004 bkl 53.55 bkl 53.73 misc SiGe BiCMOS misc Double-balanced mixer misc Monolithic balun misc FET technology misc MMIC misc Silicon substrate Design a monolithic wideband balun for mixers and amplifiers based on SiGe BiCMOS technology |
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004 ASE 53.55 bkl 53.73 bkl Design a monolithic wideband balun for mixers and amplifiers based on SiGe BiCMOS technology SiGe BiCMOS (dpeaa)DE-He213 Double-balanced mixer (dpeaa)DE-He213 Monolithic balun (dpeaa)DE-He213 FET technology (dpeaa)DE-He213 MMIC (dpeaa)DE-He213 Silicon substrate (dpeaa)DE-He213 |
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ddc 004 bkl 53.55 bkl 53.73 misc SiGe BiCMOS misc Double-balanced mixer misc Monolithic balun misc FET technology misc MMIC misc Silicon substrate |
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ddc 004 bkl 53.55 bkl 53.73 misc SiGe BiCMOS misc Double-balanced mixer misc Monolithic balun misc FET technology misc MMIC misc Silicon substrate |
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Design a monolithic wideband balun for mixers and amplifiers based on SiGe BiCMOS technology |
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Design a monolithic wideband balun for mixers and amplifiers based on SiGe BiCMOS technology |
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Khan, Muneer |
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design a monolithic wideband balun for mixers and amplifiers based on sige bicmos technology |
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Design a monolithic wideband balun for mixers and amplifiers based on SiGe BiCMOS technology |
| abstract |
Abstract In this paper a monolithic balun for mixers and amplifiers based on BiCMOS Technology presented on chip integrated balun based on 0.25 μm SiGe BiCMOS technology. monolithic microwave integrated circuit is designed by the passive double-balanced mixers with the help of resistive field effect transistor topology. The formation of integrated monolithic balun is a cross coupled and asymmetric. The performance of monolithic balun is measured over the range of 0–5 GHz frequency range. This balun is having the specification of conversion gain Gc is greater than − 10 dB, RF IC isolation is greater than 25 dB, LO–RF and LO–IF isolation is greater than 40 dB, return losses at IF and RF ports are better than − 10 dB. In terms of dimensions we uses the length and width of the periphery 800 × 600 μm. For layer conductance we uses the substrate as Silicon TopMetal2. |
| abstractGer |
Abstract In this paper a monolithic balun for mixers and amplifiers based on BiCMOS Technology presented on chip integrated balun based on 0.25 μm SiGe BiCMOS technology. monolithic microwave integrated circuit is designed by the passive double-balanced mixers with the help of resistive field effect transistor topology. The formation of integrated monolithic balun is a cross coupled and asymmetric. The performance of monolithic balun is measured over the range of 0–5 GHz frequency range. This balun is having the specification of conversion gain Gc is greater than − 10 dB, RF IC isolation is greater than 25 dB, LO–RF and LO–IF isolation is greater than 40 dB, return losses at IF and RF ports are better than − 10 dB. In terms of dimensions we uses the length and width of the periphery 800 × 600 μm. For layer conductance we uses the substrate as Silicon TopMetal2. |
| abstract_unstemmed |
Abstract In this paper a monolithic balun for mixers and amplifiers based on BiCMOS Technology presented on chip integrated balun based on 0.25 μm SiGe BiCMOS technology. monolithic microwave integrated circuit is designed by the passive double-balanced mixers with the help of resistive field effect transistor topology. The formation of integrated monolithic balun is a cross coupled and asymmetric. The performance of monolithic balun is measured over the range of 0–5 GHz frequency range. This balun is having the specification of conversion gain Gc is greater than − 10 dB, RF IC isolation is greater than 25 dB, LO–RF and LO–IF isolation is greater than 40 dB, return losses at IF and RF ports are better than − 10 dB. In terms of dimensions we uses the length and width of the periphery 800 × 600 μm. For layer conductance we uses the substrate as Silicon TopMetal2. |
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2 |
| title_short |
Design a monolithic wideband balun for mixers and amplifiers based on SiGe BiCMOS technology |
| url |
https://dx.doi.org/10.1007/s10470-019-01543-6 |
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| doi_str |
10.1007/s10470-019-01543-6 |
| up_date |
2024-07-03T15:25:32.776Z |
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