The formation of submonolayer thorium coatings on a silicon oxide surface by electrochemical deposition

Abstract Data are reported on the mechanisms of the formation of submonolayer coatings based on thorium oxide on the surface of Si(111) single crystal with natural oxide as a result of electrochemical deposition. It is experimentally shown that the deposition of thorium atoms from an acetone solutio...
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Gespeichert in:

Autor*in:	Borisyuk, P. V. [verfasserIn] Vasil’ev, O. S. [verfasserIn] Loginov, V. B. [verfasserIn] Lebedinskii, Yu. Yu. [verfasserIn] Troyan, V. I. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2014

Schlagwörter:	Thorium Colloid Journal Acetone Solution Thorium Nitrate Natural Silicon Oxide

Übergeordnetes Werk:	Enthalten in: Colloid journal - Moscow : MAIK Nauka/Interperiodica, 2000, 76(2014), 5 vom: Sept., Seite 514-521
Übergeordnetes Werk:	volume:76 ; year:2014 ; number:5 ; month:09 ; pages:514-521

Links:	Volltext

DOI / URN:	10.1134/S1061933X14050032

Katalog-ID:	SPR01164141X

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520			\|a Abstract Data are reported on the mechanisms of the formation of submonolayer coatings based on thorium oxide on the surface of Si(111) single crystal with natural oxide as a result of electrochemical deposition. It is experimentally shown that the deposition of thorium atoms from an acetone solution of Th($ NO_{3} $)4 onto the surface of natural silicon oxide leads to the formation of defects in the thin silicon oxide layer, which is accompanied by the deposition of thorium nanoclusters onto a pure silicon surface. The observed effects have been qualitatively explained assuming the breakdown of natural silicon oxide due to the presence of an electrical double layer in the near-surface region of the cathode.
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700	1		\|a Vasil’ev, O. S. \|e verfasserin \|4 aut
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allfields	10.1134/S1061933X14050032 doi (DE-627)SPR01164141X (SPR)S1061933X14050032-e DE-627 ger DE-627 rakwb eng 540 ASE 35.18 bkl Borisyuk, P. V. verfasserin aut The formation of submonolayer thorium coatings on a silicon oxide surface by electrochemical deposition 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Data are reported on the mechanisms of the formation of submonolayer coatings based on thorium oxide on the surface of Si(111) single crystal with natural oxide as a result of electrochemical deposition. It is experimentally shown that the deposition of thorium atoms from an acetone solution of Th($ NO_{3} $)4 onto the surface of natural silicon oxide leads to the formation of defects in the thin silicon oxide layer, which is accompanied by the deposition of thorium nanoclusters onto a pure silicon surface. The observed effects have been qualitatively explained assuming the breakdown of natural silicon oxide due to the presence of an electrical double layer in the near-surface region of the cathode. Thorium (dpeaa)DE-He213 Colloid Journal (dpeaa)DE-He213 Acetone Solution (dpeaa)DE-He213 Thorium Nitrate (dpeaa)DE-He213 Natural Silicon Oxide (dpeaa)DE-He213 Vasil’ev, O. S. verfasserin aut Loginov, V. B. verfasserin aut Lebedinskii, Yu. Yu. verfasserin aut Troyan, V. I. verfasserin aut Enthalten in Colloid journal Moscow : MAIK Nauka/Interperiodica, 2000 76(2014), 5 vom: Sept., Seite 514-521 (DE-627)33437409X (DE-600)2057524-5 1608-3067 nnns volume:76 year:2014 number:5 month:09 pages:514-521 https://dx.doi.org/10.1134/S1061933X14050032 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.18 ASE AR 76 2014 5 09 514-521
spelling	10.1134/S1061933X14050032 doi (DE-627)SPR01164141X (SPR)S1061933X14050032-e DE-627 ger DE-627 rakwb eng 540 ASE 35.18 bkl Borisyuk, P. V. verfasserin aut The formation of submonolayer thorium coatings on a silicon oxide surface by electrochemical deposition 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Data are reported on the mechanisms of the formation of submonolayer coatings based on thorium oxide on the surface of Si(111) single crystal with natural oxide as a result of electrochemical deposition. It is experimentally shown that the deposition of thorium atoms from an acetone solution of Th($ NO_{3} $)4 onto the surface of natural silicon oxide leads to the formation of defects in the thin silicon oxide layer, which is accompanied by the deposition of thorium nanoclusters onto a pure silicon surface. The observed effects have been qualitatively explained assuming the breakdown of natural silicon oxide due to the presence of an electrical double layer in the near-surface region of the cathode. Thorium (dpeaa)DE-He213 Colloid Journal (dpeaa)DE-He213 Acetone Solution (dpeaa)DE-He213 Thorium Nitrate (dpeaa)DE-He213 Natural Silicon Oxide (dpeaa)DE-He213 Vasil’ev, O. S. verfasserin aut Loginov, V. B. verfasserin aut Lebedinskii, Yu. Yu. verfasserin aut Troyan, V. I. verfasserin aut Enthalten in Colloid journal Moscow : MAIK Nauka/Interperiodica, 2000 76(2014), 5 vom: Sept., Seite 514-521 (DE-627)33437409X (DE-600)2057524-5 1608-3067 nnns volume:76 year:2014 number:5 month:09 pages:514-521 https://dx.doi.org/10.1134/S1061933X14050032 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.18 ASE AR 76 2014 5 09 514-521
allfields_unstemmed	10.1134/S1061933X14050032 doi (DE-627)SPR01164141X (SPR)S1061933X14050032-e DE-627 ger DE-627 rakwb eng 540 ASE 35.18 bkl Borisyuk, P. V. verfasserin aut The formation of submonolayer thorium coatings on a silicon oxide surface by electrochemical deposition 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Data are reported on the mechanisms of the formation of submonolayer coatings based on thorium oxide on the surface of Si(111) single crystal with natural oxide as a result of electrochemical deposition. It is experimentally shown that the deposition of thorium atoms from an acetone solution of Th($ NO_{3} $)4 onto the surface of natural silicon oxide leads to the formation of defects in the thin silicon oxide layer, which is accompanied by the deposition of thorium nanoclusters onto a pure silicon surface. The observed effects have been qualitatively explained assuming the breakdown of natural silicon oxide due to the presence of an electrical double layer in the near-surface region of the cathode. Thorium (dpeaa)DE-He213 Colloid Journal (dpeaa)DE-He213 Acetone Solution (dpeaa)DE-He213 Thorium Nitrate (dpeaa)DE-He213 Natural Silicon Oxide (dpeaa)DE-He213 Vasil’ev, O. S. verfasserin aut Loginov, V. B. verfasserin aut Lebedinskii, Yu. Yu. verfasserin aut Troyan, V. I. verfasserin aut Enthalten in Colloid journal Moscow : MAIK Nauka/Interperiodica, 2000 76(2014), 5 vom: Sept., Seite 514-521 (DE-627)33437409X (DE-600)2057524-5 1608-3067 nnns volume:76 year:2014 number:5 month:09 pages:514-521 https://dx.doi.org/10.1134/S1061933X14050032 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.18 ASE AR 76 2014 5 09 514-521
allfieldsGer	10.1134/S1061933X14050032 doi (DE-627)SPR01164141X (SPR)S1061933X14050032-e DE-627 ger DE-627 rakwb eng 540 ASE 35.18 bkl Borisyuk, P. V. verfasserin aut The formation of submonolayer thorium coatings on a silicon oxide surface by electrochemical deposition 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Data are reported on the mechanisms of the formation of submonolayer coatings based on thorium oxide on the surface of Si(111) single crystal with natural oxide as a result of electrochemical deposition. It is experimentally shown that the deposition of thorium atoms from an acetone solution of Th($ NO_{3} $)4 onto the surface of natural silicon oxide leads to the formation of defects in the thin silicon oxide layer, which is accompanied by the deposition of thorium nanoclusters onto a pure silicon surface. The observed effects have been qualitatively explained assuming the breakdown of natural silicon oxide due to the presence of an electrical double layer in the near-surface region of the cathode. Thorium (dpeaa)DE-He213 Colloid Journal (dpeaa)DE-He213 Acetone Solution (dpeaa)DE-He213 Thorium Nitrate (dpeaa)DE-He213 Natural Silicon Oxide (dpeaa)DE-He213 Vasil’ev, O. S. verfasserin aut Loginov, V. B. verfasserin aut Lebedinskii, Yu. Yu. verfasserin aut Troyan, V. I. verfasserin aut Enthalten in Colloid journal Moscow : MAIK Nauka/Interperiodica, 2000 76(2014), 5 vom: Sept., Seite 514-521 (DE-627)33437409X (DE-600)2057524-5 1608-3067 nnns volume:76 year:2014 number:5 month:09 pages:514-521 https://dx.doi.org/10.1134/S1061933X14050032 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.18 ASE AR 76 2014 5 09 514-521
allfieldsSound	10.1134/S1061933X14050032 doi (DE-627)SPR01164141X (SPR)S1061933X14050032-e DE-627 ger DE-627 rakwb eng 540 ASE 35.18 bkl Borisyuk, P. V. verfasserin aut The formation of submonolayer thorium coatings on a silicon oxide surface by electrochemical deposition 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Data are reported on the mechanisms of the formation of submonolayer coatings based on thorium oxide on the surface of Si(111) single crystal with natural oxide as a result of electrochemical deposition. It is experimentally shown that the deposition of thorium atoms from an acetone solution of Th($ NO_{3} $)4 onto the surface of natural silicon oxide leads to the formation of defects in the thin silicon oxide layer, which is accompanied by the deposition of thorium nanoclusters onto a pure silicon surface. The observed effects have been qualitatively explained assuming the breakdown of natural silicon oxide due to the presence of an electrical double layer in the near-surface region of the cathode. Thorium (dpeaa)DE-He213 Colloid Journal (dpeaa)DE-He213 Acetone Solution (dpeaa)DE-He213 Thorium Nitrate (dpeaa)DE-He213 Natural Silicon Oxide (dpeaa)DE-He213 Vasil’ev, O. S. verfasserin aut Loginov, V. B. verfasserin aut Lebedinskii, Yu. Yu. verfasserin aut Troyan, V. I. verfasserin aut Enthalten in Colloid journal Moscow : MAIK Nauka/Interperiodica, 2000 76(2014), 5 vom: Sept., Seite 514-521 (DE-627)33437409X (DE-600)2057524-5 1608-3067 nnns volume:76 year:2014 number:5 month:09 pages:514-521 https://dx.doi.org/10.1134/S1061933X14050032 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.18 ASE AR 76 2014 5 09 514-521
language	English
source	Enthalten in Colloid journal 76(2014), 5 vom: Sept., Seite 514-521 volume:76 year:2014 number:5 month:09 pages:514-521
sourceStr	Enthalten in Colloid journal 76(2014), 5 vom: Sept., Seite 514-521 volume:76 year:2014 number:5 month:09 pages:514-521
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Thorium Colloid Journal Acetone Solution Thorium Nitrate Natural Silicon Oxide
dewey-raw	540
isfreeaccess_bool	false
container_title	Colloid journal
authorswithroles_txt_mv	Borisyuk, P. V. @@aut@@ Vasil’ev, O. S. @@aut@@ Loginov, V. B. @@aut@@ Lebedinskii, Yu. Yu. @@aut@@ Troyan, V. I. @@aut@@
publishDateDaySort_date	2014-09-01T00:00:00Z
hierarchy_top_id	33437409X
dewey-sort	3540
id	SPR01164141X
language_de	englisch
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author	Borisyuk, P. V.
spellingShingle	Borisyuk, P. V. ddc 540 bkl 35.18 misc Thorium misc Colloid Journal misc Acetone Solution misc Thorium Nitrate misc Natural Silicon Oxide The formation of submonolayer thorium coatings on a silicon oxide surface by electrochemical deposition
authorStr	Borisyuk, P. V.
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topic_title	540 ASE 35.18 bkl The formation of submonolayer thorium coatings on a silicon oxide surface by electrochemical deposition Thorium (dpeaa)DE-He213 Colloid Journal (dpeaa)DE-He213 Acetone Solution (dpeaa)DE-He213 Thorium Nitrate (dpeaa)DE-He213 Natural Silicon Oxide (dpeaa)DE-He213
topic	ddc 540 bkl 35.18 misc Thorium misc Colloid Journal misc Acetone Solution misc Thorium Nitrate misc Natural Silicon Oxide
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title	The formation of submonolayer thorium coatings on a silicon oxide surface by electrochemical deposition
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title_full	The formation of submonolayer thorium coatings on a silicon oxide surface by electrochemical deposition
author_sort	Borisyuk, P. V.
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author_browse	Borisyuk, P. V. Vasil’ev, O. S. Loginov, V. B. Lebedinskii, Yu. Yu. Troyan, V. I.
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title_sort	formation of submonolayer thorium coatings on a silicon oxide surface by electrochemical deposition
title_auth	The formation of submonolayer thorium coatings on a silicon oxide surface by electrochemical deposition
abstract	Abstract Data are reported on the mechanisms of the formation of submonolayer coatings based on thorium oxide on the surface of Si(111) single crystal with natural oxide as a result of electrochemical deposition. It is experimentally shown that the deposition of thorium atoms from an acetone solution of Th($ NO_{3} $)4 onto the surface of natural silicon oxide leads to the formation of defects in the thin silicon oxide layer, which is accompanied by the deposition of thorium nanoclusters onto a pure silicon surface. The observed effects have been qualitatively explained assuming the breakdown of natural silicon oxide due to the presence of an electrical double layer in the near-surface region of the cathode.
abstractGer	Abstract Data are reported on the mechanisms of the formation of submonolayer coatings based on thorium oxide on the surface of Si(111) single crystal with natural oxide as a result of electrochemical deposition. It is experimentally shown that the deposition of thorium atoms from an acetone solution of Th($ NO_{3} $)4 onto the surface of natural silicon oxide leads to the formation of defects in the thin silicon oxide layer, which is accompanied by the deposition of thorium nanoclusters onto a pure silicon surface. The observed effects have been qualitatively explained assuming the breakdown of natural silicon oxide due to the presence of an electrical double layer in the near-surface region of the cathode.
abstract_unstemmed	Abstract Data are reported on the mechanisms of the formation of submonolayer coatings based on thorium oxide on the surface of Si(111) single crystal with natural oxide as a result of electrochemical deposition. It is experimentally shown that the deposition of thorium atoms from an acetone solution of Th($ NO_{3} $)4 onto the surface of natural silicon oxide leads to the formation of defects in the thin silicon oxide layer, which is accompanied by the deposition of thorium nanoclusters onto a pure silicon surface. The observed effects have been qualitatively explained assuming the breakdown of natural silicon oxide due to the presence of an electrical double layer in the near-surface region of the cathode.
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title_short	The formation of submonolayer thorium coatings on a silicon oxide surface by electrochemical deposition
url	https://dx.doi.org/10.1134/S1061933X14050032
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author2	Vasil’ev, O. S. Loginov, V. B. Lebedinskii, Yu. Yu Troyan, V. I.
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doi_str	10.1134/S1061933X14050032
up_date	2024-07-03T23:46:35.882Z
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The formation of submonolayer thorium coatings on a silicon oxide surface by electrochemical deposition

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