Extended fine structure of auger spectra of thermally oxidized silicon surface
Abstract The data are presented on the evolution of the shape and position of the L23VV Auger line for the surface of single-crystal silicon Si(111) during its thermal oxidation. The fine structure of the high-energy region of the Auger spectrum is found to be related to the loss of energy by Auger...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Troyan, V. I. [verfasserIn] Loginov, V. B. [verfasserIn] Borisyuk, P. V. [verfasserIn] Vasil’ev, O. S. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Colloid journal - Moscow : MAIK Nauka/Interperiodica, 2000, 77(2015), 5 vom: Sept., Seite 635-640 |
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| Übergeordnetes Werk: |
volume:77 ; year:2015 ; number:5 ; month:09 ; pages:635-640 |
| Links: |
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| DOI / URN: |
10.1134/S1061933X1505018X |
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| Katalog-ID: |
SPR011642750 |
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| 520 | |a Abstract The data are presented on the evolution of the shape and position of the L23VV Auger line for the surface of single-crystal silicon Si(111) during its thermal oxidation. The fine structure of the high-energy region of the Auger spectrum is found to be related to the loss of energy by Auger electrons for plasmon excitation and electronic interband transitions, while the low-energy region may be associated with the effect of extension fine Auger structure (EXFAS). By the example of Si atoms in a thin surface layer of $ SiO_{2} $, it is shown that, similarly to studying the ordinary oscillations of the EXAFS absorption spectra, the EXFAS technique can be used to solve the problems of the restoration of the local environment of atoms. The interatomic distances calculated using the Fourier transform of the right-hand sides of the Auger spectra (EXFAS spectra) for the pure and oxidized silicon surfaces appear to be 2.2 and 1.7 Å, respectively, thereby coinciding with the published values within determination error. | ||
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| 700 | 1 | |a Loginov, V. B. |e verfasserin |4 aut | |
| 700 | 1 | |a Borisyuk, P. V. |e verfasserin |4 aut | |
| 700 | 1 | |a Vasil’ev, O. S. |e verfasserin |4 aut | |
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10.1134/S1061933X1505018X doi (DE-627)SPR011642750 (SPR)S1061933X1505018X-e DE-627 ger DE-627 rakwb eng 540 ASE 35.18 bkl Troyan, V. I. verfasserin aut Extended fine structure of auger spectra of thermally oxidized silicon surface 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The data are presented on the evolution of the shape and position of the L23VV Auger line for the surface of single-crystal silicon Si(111) during its thermal oxidation. The fine structure of the high-energy region of the Auger spectrum is found to be related to the loss of energy by Auger electrons for plasmon excitation and electronic interband transitions, while the low-energy region may be associated with the effect of extension fine Auger structure (EXFAS). By the example of Si atoms in a thin surface layer of $ SiO_{2} $, it is shown that, similarly to studying the ordinary oscillations of the EXAFS absorption spectra, the EXFAS technique can be used to solve the problems of the restoration of the local environment of atoms. The interatomic distances calculated using the Fourier transform of the right-hand sides of the Auger spectra (EXFAS spectra) for the pure and oxidized silicon surfaces appear to be 2.2 and 1.7 Å, respectively, thereby coinciding with the published values within determination error. Auger (dpeaa)DE-He213 Silicon Surface (dpeaa)DE-He213 Auger Electron (dpeaa)DE-He213 Colloid Journal (dpeaa)DE-He213 Auger Spectrum (dpeaa)DE-He213 Loginov, V. B. verfasserin aut Borisyuk, P. V. verfasserin aut Vasil’ev, O. S. verfasserin aut Enthalten in Colloid journal Moscow : MAIK Nauka/Interperiodica, 2000 77(2015), 5 vom: Sept., Seite 635-640 (DE-627)33437409X (DE-600)2057524-5 1608-3067 nnns volume:77 year:2015 number:5 month:09 pages:635-640 https://dx.doi.org/10.1134/S1061933X1505018X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.18 ASE AR 77 2015 5 09 635-640 |
| spelling |
10.1134/S1061933X1505018X doi (DE-627)SPR011642750 (SPR)S1061933X1505018X-e DE-627 ger DE-627 rakwb eng 540 ASE 35.18 bkl Troyan, V. I. verfasserin aut Extended fine structure of auger spectra of thermally oxidized silicon surface 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The data are presented on the evolution of the shape and position of the L23VV Auger line for the surface of single-crystal silicon Si(111) during its thermal oxidation. The fine structure of the high-energy region of the Auger spectrum is found to be related to the loss of energy by Auger electrons for plasmon excitation and electronic interband transitions, while the low-energy region may be associated with the effect of extension fine Auger structure (EXFAS). By the example of Si atoms in a thin surface layer of $ SiO_{2} $, it is shown that, similarly to studying the ordinary oscillations of the EXAFS absorption spectra, the EXFAS technique can be used to solve the problems of the restoration of the local environment of atoms. The interatomic distances calculated using the Fourier transform of the right-hand sides of the Auger spectra (EXFAS spectra) for the pure and oxidized silicon surfaces appear to be 2.2 and 1.7 Å, respectively, thereby coinciding with the published values within determination error. Auger (dpeaa)DE-He213 Silicon Surface (dpeaa)DE-He213 Auger Electron (dpeaa)DE-He213 Colloid Journal (dpeaa)DE-He213 Auger Spectrum (dpeaa)DE-He213 Loginov, V. B. verfasserin aut Borisyuk, P. V. verfasserin aut Vasil’ev, O. S. verfasserin aut Enthalten in Colloid journal Moscow : MAIK Nauka/Interperiodica, 2000 77(2015), 5 vom: Sept., Seite 635-640 (DE-627)33437409X (DE-600)2057524-5 1608-3067 nnns volume:77 year:2015 number:5 month:09 pages:635-640 https://dx.doi.org/10.1134/S1061933X1505018X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.18 ASE AR 77 2015 5 09 635-640 |
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10.1134/S1061933X1505018X doi (DE-627)SPR011642750 (SPR)S1061933X1505018X-e DE-627 ger DE-627 rakwb eng 540 ASE 35.18 bkl Troyan, V. I. verfasserin aut Extended fine structure of auger spectra of thermally oxidized silicon surface 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The data are presented on the evolution of the shape and position of the L23VV Auger line for the surface of single-crystal silicon Si(111) during its thermal oxidation. The fine structure of the high-energy region of the Auger spectrum is found to be related to the loss of energy by Auger electrons for plasmon excitation and electronic interband transitions, while the low-energy region may be associated with the effect of extension fine Auger structure (EXFAS). By the example of Si atoms in a thin surface layer of $ SiO_{2} $, it is shown that, similarly to studying the ordinary oscillations of the EXAFS absorption spectra, the EXFAS technique can be used to solve the problems of the restoration of the local environment of atoms. The interatomic distances calculated using the Fourier transform of the right-hand sides of the Auger spectra (EXFAS spectra) for the pure and oxidized silicon surfaces appear to be 2.2 and 1.7 Å, respectively, thereby coinciding with the published values within determination error. Auger (dpeaa)DE-He213 Silicon Surface (dpeaa)DE-He213 Auger Electron (dpeaa)DE-He213 Colloid Journal (dpeaa)DE-He213 Auger Spectrum (dpeaa)DE-He213 Loginov, V. B. verfasserin aut Borisyuk, P. V. verfasserin aut Vasil’ev, O. S. verfasserin aut Enthalten in Colloid journal Moscow : MAIK Nauka/Interperiodica, 2000 77(2015), 5 vom: Sept., Seite 635-640 (DE-627)33437409X (DE-600)2057524-5 1608-3067 nnns volume:77 year:2015 number:5 month:09 pages:635-640 https://dx.doi.org/10.1134/S1061933X1505018X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.18 ASE AR 77 2015 5 09 635-640 |
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10.1134/S1061933X1505018X doi (DE-627)SPR011642750 (SPR)S1061933X1505018X-e DE-627 ger DE-627 rakwb eng 540 ASE 35.18 bkl Troyan, V. I. verfasserin aut Extended fine structure of auger spectra of thermally oxidized silicon surface 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The data are presented on the evolution of the shape and position of the L23VV Auger line for the surface of single-crystal silicon Si(111) during its thermal oxidation. The fine structure of the high-energy region of the Auger spectrum is found to be related to the loss of energy by Auger electrons for plasmon excitation and electronic interband transitions, while the low-energy region may be associated with the effect of extension fine Auger structure (EXFAS). By the example of Si atoms in a thin surface layer of $ SiO_{2} $, it is shown that, similarly to studying the ordinary oscillations of the EXAFS absorption spectra, the EXFAS technique can be used to solve the problems of the restoration of the local environment of atoms. The interatomic distances calculated using the Fourier transform of the right-hand sides of the Auger spectra (EXFAS spectra) for the pure and oxidized silicon surfaces appear to be 2.2 and 1.7 Å, respectively, thereby coinciding with the published values within determination error. Auger (dpeaa)DE-He213 Silicon Surface (dpeaa)DE-He213 Auger Electron (dpeaa)DE-He213 Colloid Journal (dpeaa)DE-He213 Auger Spectrum (dpeaa)DE-He213 Loginov, V. B. verfasserin aut Borisyuk, P. V. verfasserin aut Vasil’ev, O. S. verfasserin aut Enthalten in Colloid journal Moscow : MAIK Nauka/Interperiodica, 2000 77(2015), 5 vom: Sept., Seite 635-640 (DE-627)33437409X (DE-600)2057524-5 1608-3067 nnns volume:77 year:2015 number:5 month:09 pages:635-640 https://dx.doi.org/10.1134/S1061933X1505018X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.18 ASE AR 77 2015 5 09 635-640 |
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10.1134/S1061933X1505018X doi (DE-627)SPR011642750 (SPR)S1061933X1505018X-e DE-627 ger DE-627 rakwb eng 540 ASE 35.18 bkl Troyan, V. I. verfasserin aut Extended fine structure of auger spectra of thermally oxidized silicon surface 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The data are presented on the evolution of the shape and position of the L23VV Auger line for the surface of single-crystal silicon Si(111) during its thermal oxidation. The fine structure of the high-energy region of the Auger spectrum is found to be related to the loss of energy by Auger electrons for plasmon excitation and electronic interband transitions, while the low-energy region may be associated with the effect of extension fine Auger structure (EXFAS). By the example of Si atoms in a thin surface layer of $ SiO_{2} $, it is shown that, similarly to studying the ordinary oscillations of the EXAFS absorption spectra, the EXFAS technique can be used to solve the problems of the restoration of the local environment of atoms. The interatomic distances calculated using the Fourier transform of the right-hand sides of the Auger spectra (EXFAS spectra) for the pure and oxidized silicon surfaces appear to be 2.2 and 1.7 Å, respectively, thereby coinciding with the published values within determination error. Auger (dpeaa)DE-He213 Silicon Surface (dpeaa)DE-He213 Auger Electron (dpeaa)DE-He213 Colloid Journal (dpeaa)DE-He213 Auger Spectrum (dpeaa)DE-He213 Loginov, V. B. verfasserin aut Borisyuk, P. V. verfasserin aut Vasil’ev, O. S. verfasserin aut Enthalten in Colloid journal Moscow : MAIK Nauka/Interperiodica, 2000 77(2015), 5 vom: Sept., Seite 635-640 (DE-627)33437409X (DE-600)2057524-5 1608-3067 nnns volume:77 year:2015 number:5 month:09 pages:635-640 https://dx.doi.org/10.1134/S1061933X1505018X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.18 ASE AR 77 2015 5 09 635-640 |
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| author |
Troyan, V. I. |
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Troyan, V. I. ddc 540 bkl 35.18 misc Auger misc Silicon Surface misc Auger Electron misc Colloid Journal misc Auger Spectrum Extended fine structure of auger spectra of thermally oxidized silicon surface |
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540 ASE 35.18 bkl Extended fine structure of auger spectra of thermally oxidized silicon surface Auger (dpeaa)DE-He213 Silicon Surface (dpeaa)DE-He213 Auger Electron (dpeaa)DE-He213 Colloid Journal (dpeaa)DE-He213 Auger Spectrum (dpeaa)DE-He213 |
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Extended fine structure of auger spectra of thermally oxidized silicon surface |
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Extended fine structure of auger spectra of thermally oxidized silicon surface |
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Troyan, V. I. Loginov, V. B. Borisyuk, P. V. Vasil’ev, O. S. |
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extended fine structure of auger spectra of thermally oxidized silicon surface |
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Extended fine structure of auger spectra of thermally oxidized silicon surface |
| abstract |
Abstract The data are presented on the evolution of the shape and position of the L23VV Auger line for the surface of single-crystal silicon Si(111) during its thermal oxidation. The fine structure of the high-energy region of the Auger spectrum is found to be related to the loss of energy by Auger electrons for plasmon excitation and electronic interband transitions, while the low-energy region may be associated with the effect of extension fine Auger structure (EXFAS). By the example of Si atoms in a thin surface layer of $ SiO_{2} $, it is shown that, similarly to studying the ordinary oscillations of the EXAFS absorption spectra, the EXFAS technique can be used to solve the problems of the restoration of the local environment of atoms. The interatomic distances calculated using the Fourier transform of the right-hand sides of the Auger spectra (EXFAS spectra) for the pure and oxidized silicon surfaces appear to be 2.2 and 1.7 Å, respectively, thereby coinciding with the published values within determination error. |
| abstractGer |
Abstract The data are presented on the evolution of the shape and position of the L23VV Auger line for the surface of single-crystal silicon Si(111) during its thermal oxidation. The fine structure of the high-energy region of the Auger spectrum is found to be related to the loss of energy by Auger electrons for plasmon excitation and electronic interband transitions, while the low-energy region may be associated with the effect of extension fine Auger structure (EXFAS). By the example of Si atoms in a thin surface layer of $ SiO_{2} $, it is shown that, similarly to studying the ordinary oscillations of the EXAFS absorption spectra, the EXFAS technique can be used to solve the problems of the restoration of the local environment of atoms. The interatomic distances calculated using the Fourier transform of the right-hand sides of the Auger spectra (EXFAS spectra) for the pure and oxidized silicon surfaces appear to be 2.2 and 1.7 Å, respectively, thereby coinciding with the published values within determination error. |
| abstract_unstemmed |
Abstract The data are presented on the evolution of the shape and position of the L23VV Auger line for the surface of single-crystal silicon Si(111) during its thermal oxidation. The fine structure of the high-energy region of the Auger spectrum is found to be related to the loss of energy by Auger electrons for plasmon excitation and electronic interband transitions, while the low-energy region may be associated with the effect of extension fine Auger structure (EXFAS). By the example of Si atoms in a thin surface layer of $ SiO_{2} $, it is shown that, similarly to studying the ordinary oscillations of the EXAFS absorption spectra, the EXFAS technique can be used to solve the problems of the restoration of the local environment of atoms. The interatomic distances calculated using the Fourier transform of the right-hand sides of the Auger spectra (EXFAS spectra) for the pure and oxidized silicon surfaces appear to be 2.2 and 1.7 Å, respectively, thereby coinciding with the published values within determination error. |
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Extended fine structure of auger spectra of thermally oxidized silicon surface |
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https://dx.doi.org/10.1134/S1061933X1505018X |
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Loginov, V. B. Borisyuk, P. V. Vasil’ev, O. S. |
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Loginov, V. B. Borisyuk, P. V. Vasil’ev, O. S. |
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| doi_str |
10.1134/S1061933X1505018X |
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2024-07-03T23:46:58.554Z |
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| score |
7.399373 |