Sub-millimeter-Wave Equivalent Circuit Model for External Parasitics in Double-Finger HEMT Topologies

Abstract We present a novel distributed equivalent circuit that incorporates a three-way-coupled transmission line to accurately capture the external parasitics of double-finger high electron mobility transistor (HEMT) topologies up to 750 GHz. A six-step systematic parameter extraction procedure is...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Karisan, Yasir [verfasserIn] Caglayan, Cosan [verfasserIn] Sertel, Kubilay [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2017

Schlagwörter:	Transistors Parasitics HEMT Distributed circuit modeling HEMT parasitic extraction

Übergeordnetes Werk:	Enthalten in: International journal of infrared and millimeter waves - Dordrecht [u.a.] : Springer Science + Business Media B.V., 1980, 39(2017), 2 vom: 18. Nov., Seite 142-160
Übergeordnetes Werk:	volume:39 ; year:2017 ; number:2 ; day:18 ; month:11 ; pages:142-160

Links:	Volltext

DOI / URN:	10.1007/s10762-017-0455-1

Katalog-ID:	SPR013070088

Internformat


LEADER	01000caa a22002652 4500
001	SPR013070088
003	DE-627
005	20220111000853.0
007	cr uuu---uuuuu
008	201005s2017 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.1007/s10762-017-0455-1 \|2 doi
035			\|a (DE-627)SPR013070088
035			\|a (SPR)s10762-017-0455-1-e
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
082	0	4	\|a 530 \|q ASE
084			\|a 33.00 \|2 bkl
100	1		\|a Karisan, Yasir \|e verfasserin \|4 aut
245	1	0	\|a Sub-millimeter-Wave Equivalent Circuit Model for External Parasitics in Double-Finger HEMT Topologies
264		1	\|c 2017
336			\|a Text \|b txt \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a Abstract We present a novel distributed equivalent circuit that incorporates a three-way-coupled transmission line to accurately capture the external parasitics of double-finger high electron mobility transistor (HEMT) topologies up to 750 GHz. A six-step systematic parameter extraction procedure is used to determine the equivalent circuit elements for a representative device layout. The accuracy of the proposed approach is validated in the 90–750 GHz band through comparisons between measured data (via non-contact probing) and full-wave simulations, as well as the equivalent circuit response. Subsequently, a semi-distributed active device model is incorporated into the proposed parasitic circuit to demonstrate that the three-way-coupled transmission line model effectively predicts the adverse effect of parasitic components on the sub-mmW performance in an amplifier setting.
650		4	\|a Transistors \|7 (dpeaa)DE-He213
650		4	\|a Parasitics \|7 (dpeaa)DE-He213
650		4	\|a HEMT \|7 (dpeaa)DE-He213
650		4	\|a Distributed circuit modeling \|7 (dpeaa)DE-He213
650		4	\|a HEMT parasitic extraction \|7 (dpeaa)DE-He213
700	1		\|a Caglayan, Cosan \|e verfasserin \|4 aut
700	1		\|a Sertel, Kubilay \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t International journal of infrared and millimeter waves \|d Dordrecht [u.a.] : Springer Science + Business Media B.V., 1980 \|g 39(2017), 2 vom: 18. Nov., Seite 142-160 \|w (DE-627)319583627 \|w (DE-600)2016007-0 \|x 1572-9559 \|7 nnns
773	1	8	\|g volume:39 \|g year:2017 \|g number:2 \|g day:18 \|g month:11 \|g pages:142-160
856	4	0	\|u https://dx.doi.org/10.1007/s10762-017-0455-1 \|z lizenzpflichtig \|3 Volltext
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_SPRINGER
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_31
912			\|a GBV_ILN_32
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
912			\|a GBV_ILN_100
912			\|a GBV_ILN_101
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_120
912			\|a GBV_ILN_138
912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_224
912			\|a GBV_ILN_250
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_702
936	b	k	\|a 33.00 \|q ASE
951			\|a AR
952			\|d 39 \|j 2017 \|e 2 \|b 18 \|c 11 \|h 142-160

Indexfelder

author_variant	y k yk c c cc k s ks
matchkey_str	article:15729559:2017----::umlieewveuvlncrutoefrxenlaaiisnob
hierarchy_sort_str	2017
bklnumber	33.00
publishDate	2017
allfields	10.1007/s10762-017-0455-1 doi (DE-627)SPR013070088 (SPR)s10762-017-0455-1-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Karisan, Yasir verfasserin aut Sub-millimeter-Wave Equivalent Circuit Model for External Parasitics in Double-Finger HEMT Topologies 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We present a novel distributed equivalent circuit that incorporates a three-way-coupled transmission line to accurately capture the external parasitics of double-finger high electron mobility transistor (HEMT) topologies up to 750 GHz. A six-step systematic parameter extraction procedure is used to determine the equivalent circuit elements for a representative device layout. The accuracy of the proposed approach is validated in the 90–750 GHz band through comparisons between measured data (via non-contact probing) and full-wave simulations, as well as the equivalent circuit response. Subsequently, a semi-distributed active device model is incorporated into the proposed parasitic circuit to demonstrate that the three-way-coupled transmission line model effectively predicts the adverse effect of parasitic components on the sub-mmW performance in an amplifier setting. Transistors (dpeaa)DE-He213 Parasitics (dpeaa)DE-He213 HEMT (dpeaa)DE-He213 Distributed circuit modeling (dpeaa)DE-He213 HEMT parasitic extraction (dpeaa)DE-He213 Caglayan, Cosan verfasserin aut Sertel, Kubilay verfasserin aut Enthalten in International journal of infrared and millimeter waves Dordrecht [u.a.] : Springer Science + Business Media B.V., 1980 39(2017), 2 vom: 18. Nov., Seite 142-160 (DE-627)319583627 (DE-600)2016007-0 1572-9559 nnns volume:39 year:2017 number:2 day:18 month:11 pages:142-160 https://dx.doi.org/10.1007/s10762-017-0455-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 33.00 ASE AR 39 2017 2 18 11 142-160
spelling	10.1007/s10762-017-0455-1 doi (DE-627)SPR013070088 (SPR)s10762-017-0455-1-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Karisan, Yasir verfasserin aut Sub-millimeter-Wave Equivalent Circuit Model for External Parasitics in Double-Finger HEMT Topologies 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We present a novel distributed equivalent circuit that incorporates a three-way-coupled transmission line to accurately capture the external parasitics of double-finger high electron mobility transistor (HEMT) topologies up to 750 GHz. A six-step systematic parameter extraction procedure is used to determine the equivalent circuit elements for a representative device layout. The accuracy of the proposed approach is validated in the 90–750 GHz band through comparisons between measured data (via non-contact probing) and full-wave simulations, as well as the equivalent circuit response. Subsequently, a semi-distributed active device model is incorporated into the proposed parasitic circuit to demonstrate that the three-way-coupled transmission line model effectively predicts the adverse effect of parasitic components on the sub-mmW performance in an amplifier setting. Transistors (dpeaa)DE-He213 Parasitics (dpeaa)DE-He213 HEMT (dpeaa)DE-He213 Distributed circuit modeling (dpeaa)DE-He213 HEMT parasitic extraction (dpeaa)DE-He213 Caglayan, Cosan verfasserin aut Sertel, Kubilay verfasserin aut Enthalten in International journal of infrared and millimeter waves Dordrecht [u.a.] : Springer Science + Business Media B.V., 1980 39(2017), 2 vom: 18. Nov., Seite 142-160 (DE-627)319583627 (DE-600)2016007-0 1572-9559 nnns volume:39 year:2017 number:2 day:18 month:11 pages:142-160 https://dx.doi.org/10.1007/s10762-017-0455-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 33.00 ASE AR 39 2017 2 18 11 142-160
allfields_unstemmed	10.1007/s10762-017-0455-1 doi (DE-627)SPR013070088 (SPR)s10762-017-0455-1-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Karisan, Yasir verfasserin aut Sub-millimeter-Wave Equivalent Circuit Model for External Parasitics in Double-Finger HEMT Topologies 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We present a novel distributed equivalent circuit that incorporates a three-way-coupled transmission line to accurately capture the external parasitics of double-finger high electron mobility transistor (HEMT) topologies up to 750 GHz. A six-step systematic parameter extraction procedure is used to determine the equivalent circuit elements for a representative device layout. The accuracy of the proposed approach is validated in the 90–750 GHz band through comparisons between measured data (via non-contact probing) and full-wave simulations, as well as the equivalent circuit response. Subsequently, a semi-distributed active device model is incorporated into the proposed parasitic circuit to demonstrate that the three-way-coupled transmission line model effectively predicts the adverse effect of parasitic components on the sub-mmW performance in an amplifier setting. Transistors (dpeaa)DE-He213 Parasitics (dpeaa)DE-He213 HEMT (dpeaa)DE-He213 Distributed circuit modeling (dpeaa)DE-He213 HEMT parasitic extraction (dpeaa)DE-He213 Caglayan, Cosan verfasserin aut Sertel, Kubilay verfasserin aut Enthalten in International journal of infrared and millimeter waves Dordrecht [u.a.] : Springer Science + Business Media B.V., 1980 39(2017), 2 vom: 18. Nov., Seite 142-160 (DE-627)319583627 (DE-600)2016007-0 1572-9559 nnns volume:39 year:2017 number:2 day:18 month:11 pages:142-160 https://dx.doi.org/10.1007/s10762-017-0455-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 33.00 ASE AR 39 2017 2 18 11 142-160
allfieldsGer	10.1007/s10762-017-0455-1 doi (DE-627)SPR013070088 (SPR)s10762-017-0455-1-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Karisan, Yasir verfasserin aut Sub-millimeter-Wave Equivalent Circuit Model for External Parasitics in Double-Finger HEMT Topologies 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We present a novel distributed equivalent circuit that incorporates a three-way-coupled transmission line to accurately capture the external parasitics of double-finger high electron mobility transistor (HEMT) topologies up to 750 GHz. A six-step systematic parameter extraction procedure is used to determine the equivalent circuit elements for a representative device layout. The accuracy of the proposed approach is validated in the 90–750 GHz band through comparisons between measured data (via non-contact probing) and full-wave simulations, as well as the equivalent circuit response. Subsequently, a semi-distributed active device model is incorporated into the proposed parasitic circuit to demonstrate that the three-way-coupled transmission line model effectively predicts the adverse effect of parasitic components on the sub-mmW performance in an amplifier setting. Transistors (dpeaa)DE-He213 Parasitics (dpeaa)DE-He213 HEMT (dpeaa)DE-He213 Distributed circuit modeling (dpeaa)DE-He213 HEMT parasitic extraction (dpeaa)DE-He213 Caglayan, Cosan verfasserin aut Sertel, Kubilay verfasserin aut Enthalten in International journal of infrared and millimeter waves Dordrecht [u.a.] : Springer Science + Business Media B.V., 1980 39(2017), 2 vom: 18. Nov., Seite 142-160 (DE-627)319583627 (DE-600)2016007-0 1572-9559 nnns volume:39 year:2017 number:2 day:18 month:11 pages:142-160 https://dx.doi.org/10.1007/s10762-017-0455-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 33.00 ASE AR 39 2017 2 18 11 142-160
allfieldsSound	10.1007/s10762-017-0455-1 doi (DE-627)SPR013070088 (SPR)s10762-017-0455-1-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Karisan, Yasir verfasserin aut Sub-millimeter-Wave Equivalent Circuit Model for External Parasitics in Double-Finger HEMT Topologies 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We present a novel distributed equivalent circuit that incorporates a three-way-coupled transmission line to accurately capture the external parasitics of double-finger high electron mobility transistor (HEMT) topologies up to 750 GHz. A six-step systematic parameter extraction procedure is used to determine the equivalent circuit elements for a representative device layout. The accuracy of the proposed approach is validated in the 90–750 GHz band through comparisons between measured data (via non-contact probing) and full-wave simulations, as well as the equivalent circuit response. Subsequently, a semi-distributed active device model is incorporated into the proposed parasitic circuit to demonstrate that the three-way-coupled transmission line model effectively predicts the adverse effect of parasitic components on the sub-mmW performance in an amplifier setting. Transistors (dpeaa)DE-He213 Parasitics (dpeaa)DE-He213 HEMT (dpeaa)DE-He213 Distributed circuit modeling (dpeaa)DE-He213 HEMT parasitic extraction (dpeaa)DE-He213 Caglayan, Cosan verfasserin aut Sertel, Kubilay verfasserin aut Enthalten in International journal of infrared and millimeter waves Dordrecht [u.a.] : Springer Science + Business Media B.V., 1980 39(2017), 2 vom: 18. Nov., Seite 142-160 (DE-627)319583627 (DE-600)2016007-0 1572-9559 nnns volume:39 year:2017 number:2 day:18 month:11 pages:142-160 https://dx.doi.org/10.1007/s10762-017-0455-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 33.00 ASE AR 39 2017 2 18 11 142-160
language	English
source	Enthalten in International journal of infrared and millimeter waves 39(2017), 2 vom: 18. Nov., Seite 142-160 volume:39 year:2017 number:2 day:18 month:11 pages:142-160
sourceStr	Enthalten in International journal of infrared and millimeter waves 39(2017), 2 vom: 18. Nov., Seite 142-160 volume:39 year:2017 number:2 day:18 month:11 pages:142-160
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Transistors Parasitics HEMT Distributed circuit modeling HEMT parasitic extraction
dewey-raw	530
isfreeaccess_bool	false
container_title	International journal of infrared and millimeter waves
authorswithroles_txt_mv	Karisan, Yasir @@aut@@ Caglayan, Cosan @@aut@@ Sertel, Kubilay @@aut@@
publishDateDaySort_date	2017-11-18T00:00:00Z
hierarchy_top_id	319583627
dewey-sort	3530
id	SPR013070088
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR013070088</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220111000853.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201005s2017 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10762-017-0455-1</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR013070088</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s10762-017-0455-1-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Karisan, Yasir</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Sub-millimeter-Wave Equivalent Circuit Model for External Parasitics in Double-Finger HEMT Topologies</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2017</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract We present a novel distributed equivalent circuit that incorporates a three-way-coupled transmission line to accurately capture the external parasitics of double-finger high electron mobility transistor (HEMT) topologies up to 750 GHz. A six-step systematic parameter extraction procedure is used to determine the equivalent circuit elements for a representative device layout. The accuracy of the proposed approach is validated in the 90–750 GHz band through comparisons between measured data (via non-contact probing) and full-wave simulations, as well as the equivalent circuit response. Subsequently, a semi-distributed active device model is incorporated into the proposed parasitic circuit to demonstrate that the three-way-coupled transmission line model effectively predicts the adverse effect of parasitic components on the sub-mmW performance in an amplifier setting.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Transistors</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Parasitics</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">HEMT</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Distributed circuit modeling</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">HEMT parasitic extraction</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Caglayan, Cosan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sertel, Kubilay</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">International journal of infrared and millimeter waves</subfield><subfield code="d">Dordrecht [u.a.] : Springer Science + Business Media B.V., 1980</subfield><subfield code="g">39(2017), 2 vom: 18. Nov., Seite 142-160</subfield><subfield code="w">(DE-627)319583627</subfield><subfield code="w">(DE-600)2016007-0</subfield><subfield code="x">1572-9559</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:39</subfield><subfield code="g">year:2017</subfield><subfield code="g">number:2</subfield><subfield code="g">day:18</subfield><subfield code="g">month:11</subfield><subfield code="g">pages:142-160</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1007/s10762-017-0455-1</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_101</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_120</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_138</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_171</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_187</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_250</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_281</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.00</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">39</subfield><subfield code="j">2017</subfield><subfield code="e">2</subfield><subfield code="b">18</subfield><subfield code="c">11</subfield><subfield code="h">142-160</subfield></datafield></record></collection>
author	Karisan, Yasir
spellingShingle	Karisan, Yasir ddc 530 bkl 33.00 misc Transistors misc Parasitics misc HEMT misc Distributed circuit modeling misc HEMT parasitic extraction Sub-millimeter-Wave Equivalent Circuit Model for External Parasitics in Double-Finger HEMT Topologies
authorStr	Karisan, Yasir
ppnlink_with_tag_str_mv	@@773@@(DE-627)319583627
format	electronic Article
dewey-ones	530 - Physics
delete_txt_mv	keep
author_role	aut aut aut
collection	springer
remote_str	true
illustrated	Not Illustrated
issn	1572-9559
topic_title	530 ASE 33.00 bkl Sub-millimeter-Wave Equivalent Circuit Model for External Parasitics in Double-Finger HEMT Topologies Transistors (dpeaa)DE-He213 Parasitics (dpeaa)DE-He213 HEMT (dpeaa)DE-He213 Distributed circuit modeling (dpeaa)DE-He213 HEMT parasitic extraction (dpeaa)DE-He213
topic	ddc 530 bkl 33.00 misc Transistors misc Parasitics misc HEMT misc Distributed circuit modeling misc HEMT parasitic extraction
topic_unstemmed	ddc 530 bkl 33.00 misc Transistors misc Parasitics misc HEMT misc Distributed circuit modeling misc HEMT parasitic extraction
topic_browse	ddc 530 bkl 33.00 misc Transistors misc Parasitics misc HEMT misc Distributed circuit modeling misc HEMT parasitic extraction
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	International journal of infrared and millimeter waves
hierarchy_parent_id	319583627
dewey-tens	530 - Physics
hierarchy_top_title	International journal of infrared and millimeter waves
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)319583627 (DE-600)2016007-0
title	Sub-millimeter-Wave Equivalent Circuit Model for External Parasitics in Double-Finger HEMT Topologies
ctrlnum	(DE-627)SPR013070088 (SPR)s10762-017-0455-1-e
title_full	Sub-millimeter-Wave Equivalent Circuit Model for External Parasitics in Double-Finger HEMT Topologies
author_sort	Karisan, Yasir
journal	International journal of infrared and millimeter waves
journalStr	International journal of infrared and millimeter waves
lang_code	eng
isOA_bool	false
dewey-hundreds	500 - Science
recordtype	marc
publishDateSort	2017
contenttype_str_mv	txt
container_start_page	142
author_browse	Karisan, Yasir Caglayan, Cosan Sertel, Kubilay
container_volume	39
class	530 ASE 33.00 bkl
format_se	Elektronische Aufsätze
author-letter	Karisan, Yasir
doi_str_mv	10.1007/s10762-017-0455-1
dewey-full	530
author2-role	verfasserin
title_sort	sub-millimeter-wave equivalent circuit model for external parasitics in double-finger hemt topologies
title_auth	Sub-millimeter-Wave Equivalent Circuit Model for External Parasitics in Double-Finger HEMT Topologies
abstract	Abstract We present a novel distributed equivalent circuit that incorporates a three-way-coupled transmission line to accurately capture the external parasitics of double-finger high electron mobility transistor (HEMT) topologies up to 750 GHz. A six-step systematic parameter extraction procedure is used to determine the equivalent circuit elements for a representative device layout. The accuracy of the proposed approach is validated in the 90–750 GHz band through comparisons between measured data (via non-contact probing) and full-wave simulations, as well as the equivalent circuit response. Subsequently, a semi-distributed active device model is incorporated into the proposed parasitic circuit to demonstrate that the three-way-coupled transmission line model effectively predicts the adverse effect of parasitic components on the sub-mmW performance in an amplifier setting.
abstractGer	Abstract We present a novel distributed equivalent circuit that incorporates a three-way-coupled transmission line to accurately capture the external parasitics of double-finger high electron mobility transistor (HEMT) topologies up to 750 GHz. A six-step systematic parameter extraction procedure is used to determine the equivalent circuit elements for a representative device layout. The accuracy of the proposed approach is validated in the 90–750 GHz band through comparisons between measured data (via non-contact probing) and full-wave simulations, as well as the equivalent circuit response. Subsequently, a semi-distributed active device model is incorporated into the proposed parasitic circuit to demonstrate that the three-way-coupled transmission line model effectively predicts the adverse effect of parasitic components on the sub-mmW performance in an amplifier setting.
abstract_unstemmed	Abstract We present a novel distributed equivalent circuit that incorporates a three-way-coupled transmission line to accurately capture the external parasitics of double-finger high electron mobility transistor (HEMT) topologies up to 750 GHz. A six-step systematic parameter extraction procedure is used to determine the equivalent circuit elements for a representative device layout. The accuracy of the proposed approach is validated in the 90–750 GHz band through comparisons between measured data (via non-contact probing) and full-wave simulations, as well as the equivalent circuit response. Subsequently, a semi-distributed active device model is incorporated into the proposed parasitic circuit to demonstrate that the three-way-coupled transmission line model effectively predicts the adverse effect of parasitic components on the sub-mmW performance in an amplifier setting.
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702
container_issue	2
title_short	Sub-millimeter-Wave Equivalent Circuit Model for External Parasitics in Double-Finger HEMT Topologies
url	https://dx.doi.org/10.1007/s10762-017-0455-1
remote_bool	true
author2	Caglayan, Cosan Sertel, Kubilay
author2Str	Caglayan, Cosan Sertel, Kubilay
ppnlink	319583627
mediatype_str_mv	c
isOA_txt	false
hochschulschrift_bool	false
doi_str	10.1007/s10762-017-0455-1
up_date	2024-07-03T17:14:10.436Z
_version_	1803578874743750656
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR013070088</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220111000853.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201005s2017 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10762-017-0455-1</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR013070088</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s10762-017-0455-1-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Karisan, Yasir</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Sub-millimeter-Wave Equivalent Circuit Model for External Parasitics in Double-Finger HEMT Topologies</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2017</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract We present a novel distributed equivalent circuit that incorporates a three-way-coupled transmission line to accurately capture the external parasitics of double-finger high electron mobility transistor (HEMT) topologies up to 750 GHz. A six-step systematic parameter extraction procedure is used to determine the equivalent circuit elements for a representative device layout. The accuracy of the proposed approach is validated in the 90–750 GHz band through comparisons between measured data (via non-contact probing) and full-wave simulations, as well as the equivalent circuit response. Subsequently, a semi-distributed active device model is incorporated into the proposed parasitic circuit to demonstrate that the three-way-coupled transmission line model effectively predicts the adverse effect of parasitic components on the sub-mmW performance in an amplifier setting.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Transistors</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Parasitics</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">HEMT</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Distributed circuit modeling</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">HEMT parasitic extraction</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Caglayan, Cosan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sertel, Kubilay</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">International journal of infrared and millimeter waves</subfield><subfield code="d">Dordrecht [u.a.] : Springer Science + Business Media B.V., 1980</subfield><subfield code="g">39(2017), 2 vom: 18. Nov., Seite 142-160</subfield><subfield code="w">(DE-627)319583627</subfield><subfield code="w">(DE-600)2016007-0</subfield><subfield code="x">1572-9559</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:39</subfield><subfield code="g">year:2017</subfield><subfield code="g">number:2</subfield><subfield code="g">day:18</subfield><subfield code="g">month:11</subfield><subfield code="g">pages:142-160</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1007/s10762-017-0455-1</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_101</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_120</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_138</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_171</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_187</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_250</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_281</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.00</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">39</subfield><subfield code="j">2017</subfield><subfield code="e">2</subfield><subfield code="b">18</subfield><subfield code="c">11</subfield><subfield code="h">142-160</subfield></datafield></record></collection>
score	7.398529

Nicht das Richtige dabei?

Schreiben Sie uns!

Sub-millimeter-Wave Equivalent Circuit Model for External Parasitics in Double-Finger HEMT Topologies

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?