%$\hbox {Au}^{2+}%$-Implanted Regions in Silicon Visualized Using a Modulated Free-Carrier Absorption Method
Abstract Silicon samples were implanted with %$\hbox {Au}^{2+}%$ ions of energy 100 keV and doses of %$10^{14}\,\hbox { cm}^{-2}%$. The area of the implanted region was %$2\,\hbox {mm}\times 2\,\hbox {mm}%$. The size of the Si substrate samples was %$5\,\hbox {mm}\times 5\,\hbox {mm}\times 0.4\,\hbo...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Maliński, M. [verfasserIn] Chrobak, Ł. [verfasserIn] Madej, W. [verfasserIn] Kukharchyk, N. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2017 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: International journal of thermophysics - New York, NY : Springer Science + Business Media B.V., 1980, 38(2017), 7 vom: 18. Mai |
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| Übergeordnetes Werk: |
volume:38 ; year:2017 ; number:7 ; day:18 ; month:05 |
| Links: |
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| DOI / URN: |
10.1007/s10765-017-2246-2 |
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| Katalog-ID: |
SPR013117300 |
|---|
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| 100 | 1 | |a Maliński, M. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a %$\hbox {Au}^{2+}%$-Implanted Regions in Silicon Visualized Using a Modulated Free-Carrier Absorption Method |
| 264 | 1 | |c 2017 | |
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| 520 | |a Abstract Silicon samples were implanted with %$\hbox {Au}^{2+}%$ ions of energy 100 keV and doses of %$10^{14}\,\hbox { cm}^{-2}%$. The area of the implanted region was %$2\,\hbox {mm}\times 2\,\hbox {mm}%$. The size of the Si substrate samples was %$5\,\hbox {mm}\times 5\,\hbox {mm}\times 0.4\,\hbox {mm}%$. Spatial distributions of the amplitude and profiles of the modulated free-carrier absorption (MFCA) signal of the implanted silicon samples were recorded and analyzed. The data were obtained using an experimental setup built specifically for MFCA amplitude mapping and measurements of frequency characteristics. For example, the maps and profiles showed that for 520 nm laser illumination, the MFCA amplitude in the implanted region was considerably smaller than that for the substrate. The values of the amplitude of the MFCA signal from the implanted region depended on the wavelength of illuminating light. They convey information related to the optical absorption coefficient of the implanted layers. | ||
| 650 | 4 | |a Absorption coefficient |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Ion-implanted silicon |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Modulated free-carrier absorption |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Nondestructive testing |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Photothermal visualization |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Chrobak, Ł. |e verfasserin |4 aut | |
| 700 | 1 | |a Madej, W. |e verfasserin |4 aut | |
| 700 | 1 | |a Kukharchyk, N. |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t International journal of thermophysics |d New York, NY : Springer Science + Business Media B.V., 1980 |g 38(2017), 7 vom: 18. Mai |w (DE-627)319584321 |w (DE-600)2016169-4 |x 1572-9567 |7 nnns |
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| 856 | 4 | 0 | |u https://dx.doi.org/10.1007/s10765-017-2246-2 |z kostenfrei |3 Volltext |
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| 912 | |a GBV_ILN_95 | ||
| 912 | |a GBV_ILN_100 | ||
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| 912 | |a GBV_ILN_105 | ||
| 912 | |a GBV_ILN_110 | ||
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| 912 | |a GBV_ILN_138 | ||
| 912 | |a GBV_ILN_150 | ||
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| 912 | |a GBV_ILN_2020 | ||
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| 912 | |a GBV_ILN_2037 | ||
| 912 | |a GBV_ILN_2038 | ||
| 912 | |a GBV_ILN_2039 | ||
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| 912 | |a GBV_ILN_2048 | ||
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| 912 | |a GBV_ILN_2055 | ||
| 912 | |a GBV_ILN_2057 | ||
| 912 | |a GBV_ILN_2059 | ||
| 912 | |a GBV_ILN_2061 | ||
| 912 | |a GBV_ILN_2064 | ||
| 912 | |a GBV_ILN_2065 | ||
| 912 | |a GBV_ILN_2068 | ||
| 912 | |a GBV_ILN_2070 | ||
| 912 | |a GBV_ILN_2086 | ||
| 912 | |a GBV_ILN_2088 | ||
| 912 | |a GBV_ILN_2093 | ||
| 912 | |a GBV_ILN_2106 | ||
| 912 | |a GBV_ILN_2107 | ||
| 912 | |a GBV_ILN_2108 | ||
| 912 | |a GBV_ILN_2110 | ||
| 912 | |a GBV_ILN_2111 | ||
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| 912 | |a GBV_ILN_2116 | ||
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| 912 | |a GBV_ILN_2143 | ||
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| 912 | |a GBV_ILN_4125 | ||
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| 912 | |a GBV_ILN_4313 | ||
| 912 | |a GBV_ILN_4322 | ||
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| 912 | |a GBV_ILN_4324 | ||
| 912 | |a GBV_ILN_4325 | ||
| 912 | |a GBV_ILN_4326 | ||
| 912 | |a GBV_ILN_4333 | ||
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| 936 | b | k | |a 33.00 |q ASE |
| 951 | |a AR | ||
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10.1007/s10765-017-2246-2 doi (DE-627)SPR013117300 (SPR)s10765-017-2246-2-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Maliński, M. verfasserin aut %$\hbox {Au}^{2+}%$-Implanted Regions in Silicon Visualized Using a Modulated Free-Carrier Absorption Method 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Silicon samples were implanted with %$\hbox {Au}^{2+}%$ ions of energy 100 keV and doses of %$10^{14}\,\hbox { cm}^{-2}%$. The area of the implanted region was %$2\,\hbox {mm}\times 2\,\hbox {mm}%$. The size of the Si substrate samples was %$5\,\hbox {mm}\times 5\,\hbox {mm}\times 0.4\,\hbox {mm}%$. Spatial distributions of the amplitude and profiles of the modulated free-carrier absorption (MFCA) signal of the implanted silicon samples were recorded and analyzed. The data were obtained using an experimental setup built specifically for MFCA amplitude mapping and measurements of frequency characteristics. For example, the maps and profiles showed that for 520 nm laser illumination, the MFCA amplitude in the implanted region was considerably smaller than that for the substrate. The values of the amplitude of the MFCA signal from the implanted region depended on the wavelength of illuminating light. They convey information related to the optical absorption coefficient of the implanted layers. Absorption coefficient (dpeaa)DE-He213 Ion-implanted silicon (dpeaa)DE-He213 Modulated free-carrier absorption (dpeaa)DE-He213 Nondestructive testing (dpeaa)DE-He213 Photothermal visualization (dpeaa)DE-He213 Chrobak, Ł. verfasserin aut Madej, W. verfasserin aut Kukharchyk, N. verfasserin aut Enthalten in International journal of thermophysics New York, NY : Springer Science + Business Media B.V., 1980 38(2017), 7 vom: 18. Mai (DE-627)319584321 (DE-600)2016169-4 1572-9567 nnns volume:38 year:2017 number:7 day:18 month:05 https://dx.doi.org/10.1007/s10765-017-2246-2 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 38 2017 7 18 05 |
| spelling |
10.1007/s10765-017-2246-2 doi (DE-627)SPR013117300 (SPR)s10765-017-2246-2-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Maliński, M. verfasserin aut %$\hbox {Au}^{2+}%$-Implanted Regions in Silicon Visualized Using a Modulated Free-Carrier Absorption Method 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Silicon samples were implanted with %$\hbox {Au}^{2+}%$ ions of energy 100 keV and doses of %$10^{14}\,\hbox { cm}^{-2}%$. The area of the implanted region was %$2\,\hbox {mm}\times 2\,\hbox {mm}%$. The size of the Si substrate samples was %$5\,\hbox {mm}\times 5\,\hbox {mm}\times 0.4\,\hbox {mm}%$. Spatial distributions of the amplitude and profiles of the modulated free-carrier absorption (MFCA) signal of the implanted silicon samples were recorded and analyzed. The data were obtained using an experimental setup built specifically for MFCA amplitude mapping and measurements of frequency characteristics. For example, the maps and profiles showed that for 520 nm laser illumination, the MFCA amplitude in the implanted region was considerably smaller than that for the substrate. The values of the amplitude of the MFCA signal from the implanted region depended on the wavelength of illuminating light. They convey information related to the optical absorption coefficient of the implanted layers. Absorption coefficient (dpeaa)DE-He213 Ion-implanted silicon (dpeaa)DE-He213 Modulated free-carrier absorption (dpeaa)DE-He213 Nondestructive testing (dpeaa)DE-He213 Photothermal visualization (dpeaa)DE-He213 Chrobak, Ł. verfasserin aut Madej, W. verfasserin aut Kukharchyk, N. verfasserin aut Enthalten in International journal of thermophysics New York, NY : Springer Science + Business Media B.V., 1980 38(2017), 7 vom: 18. Mai (DE-627)319584321 (DE-600)2016169-4 1572-9567 nnns volume:38 year:2017 number:7 day:18 month:05 https://dx.doi.org/10.1007/s10765-017-2246-2 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 38 2017 7 18 05 |
| allfields_unstemmed |
10.1007/s10765-017-2246-2 doi (DE-627)SPR013117300 (SPR)s10765-017-2246-2-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Maliński, M. verfasserin aut %$\hbox {Au}^{2+}%$-Implanted Regions in Silicon Visualized Using a Modulated Free-Carrier Absorption Method 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Silicon samples were implanted with %$\hbox {Au}^{2+}%$ ions of energy 100 keV and doses of %$10^{14}\,\hbox { cm}^{-2}%$. The area of the implanted region was %$2\,\hbox {mm}\times 2\,\hbox {mm}%$. The size of the Si substrate samples was %$5\,\hbox {mm}\times 5\,\hbox {mm}\times 0.4\,\hbox {mm}%$. Spatial distributions of the amplitude and profiles of the modulated free-carrier absorption (MFCA) signal of the implanted silicon samples were recorded and analyzed. The data were obtained using an experimental setup built specifically for MFCA amplitude mapping and measurements of frequency characteristics. For example, the maps and profiles showed that for 520 nm laser illumination, the MFCA amplitude in the implanted region was considerably smaller than that for the substrate. The values of the amplitude of the MFCA signal from the implanted region depended on the wavelength of illuminating light. They convey information related to the optical absorption coefficient of the implanted layers. Absorption coefficient (dpeaa)DE-He213 Ion-implanted silicon (dpeaa)DE-He213 Modulated free-carrier absorption (dpeaa)DE-He213 Nondestructive testing (dpeaa)DE-He213 Photothermal visualization (dpeaa)DE-He213 Chrobak, Ł. verfasserin aut Madej, W. verfasserin aut Kukharchyk, N. verfasserin aut Enthalten in International journal of thermophysics New York, NY : Springer Science + Business Media B.V., 1980 38(2017), 7 vom: 18. Mai (DE-627)319584321 (DE-600)2016169-4 1572-9567 nnns volume:38 year:2017 number:7 day:18 month:05 https://dx.doi.org/10.1007/s10765-017-2246-2 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 38 2017 7 18 05 |
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10.1007/s10765-017-2246-2 doi (DE-627)SPR013117300 (SPR)s10765-017-2246-2-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Maliński, M. verfasserin aut %$\hbox {Au}^{2+}%$-Implanted Regions in Silicon Visualized Using a Modulated Free-Carrier Absorption Method 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Silicon samples were implanted with %$\hbox {Au}^{2+}%$ ions of energy 100 keV and doses of %$10^{14}\,\hbox { cm}^{-2}%$. The area of the implanted region was %$2\,\hbox {mm}\times 2\,\hbox {mm}%$. The size of the Si substrate samples was %$5\,\hbox {mm}\times 5\,\hbox {mm}\times 0.4\,\hbox {mm}%$. Spatial distributions of the amplitude and profiles of the modulated free-carrier absorption (MFCA) signal of the implanted silicon samples were recorded and analyzed. The data were obtained using an experimental setup built specifically for MFCA amplitude mapping and measurements of frequency characteristics. For example, the maps and profiles showed that for 520 nm laser illumination, the MFCA amplitude in the implanted region was considerably smaller than that for the substrate. The values of the amplitude of the MFCA signal from the implanted region depended on the wavelength of illuminating light. They convey information related to the optical absorption coefficient of the implanted layers. Absorption coefficient (dpeaa)DE-He213 Ion-implanted silicon (dpeaa)DE-He213 Modulated free-carrier absorption (dpeaa)DE-He213 Nondestructive testing (dpeaa)DE-He213 Photothermal visualization (dpeaa)DE-He213 Chrobak, Ł. verfasserin aut Madej, W. verfasserin aut Kukharchyk, N. verfasserin aut Enthalten in International journal of thermophysics New York, NY : Springer Science + Business Media B.V., 1980 38(2017), 7 vom: 18. Mai (DE-627)319584321 (DE-600)2016169-4 1572-9567 nnns volume:38 year:2017 number:7 day:18 month:05 https://dx.doi.org/10.1007/s10765-017-2246-2 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 38 2017 7 18 05 |
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10.1007/s10765-017-2246-2 doi (DE-627)SPR013117300 (SPR)s10765-017-2246-2-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Maliński, M. verfasserin aut %$\hbox {Au}^{2+}%$-Implanted Regions in Silicon Visualized Using a Modulated Free-Carrier Absorption Method 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Silicon samples were implanted with %$\hbox {Au}^{2+}%$ ions of energy 100 keV and doses of %$10^{14}\,\hbox { cm}^{-2}%$. The area of the implanted region was %$2\,\hbox {mm}\times 2\,\hbox {mm}%$. The size of the Si substrate samples was %$5\,\hbox {mm}\times 5\,\hbox {mm}\times 0.4\,\hbox {mm}%$. Spatial distributions of the amplitude and profiles of the modulated free-carrier absorption (MFCA) signal of the implanted silicon samples were recorded and analyzed. The data were obtained using an experimental setup built specifically for MFCA amplitude mapping and measurements of frequency characteristics. For example, the maps and profiles showed that for 520 nm laser illumination, the MFCA amplitude in the implanted region was considerably smaller than that for the substrate. The values of the amplitude of the MFCA signal from the implanted region depended on the wavelength of illuminating light. They convey information related to the optical absorption coefficient of the implanted layers. Absorption coefficient (dpeaa)DE-He213 Ion-implanted silicon (dpeaa)DE-He213 Modulated free-carrier absorption (dpeaa)DE-He213 Nondestructive testing (dpeaa)DE-He213 Photothermal visualization (dpeaa)DE-He213 Chrobak, Ł. verfasserin aut Madej, W. verfasserin aut Kukharchyk, N. verfasserin aut Enthalten in International journal of thermophysics New York, NY : Springer Science + Business Media B.V., 1980 38(2017), 7 vom: 18. Mai (DE-627)319584321 (DE-600)2016169-4 1572-9567 nnns volume:38 year:2017 number:7 day:18 month:05 https://dx.doi.org/10.1007/s10765-017-2246-2 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 38 2017 7 18 05 |
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Enthalten in International journal of thermophysics 38(2017), 7 vom: 18. Mai volume:38 year:2017 number:7 day:18 month:05 |
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Absorption coefficient Ion-implanted silicon Modulated free-carrier absorption Nondestructive testing Photothermal visualization |
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Maliński, M. @@aut@@ Chrobak, Ł. @@aut@@ Madej, W. @@aut@@ Kukharchyk, N. @@aut@@ |
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Maliński, M. |
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Maliński, M. ddc 530 bkl 33.00 misc Absorption coefficient misc Ion-implanted silicon misc Modulated free-carrier absorption misc Nondestructive testing misc Photothermal visualization %$\hbox {Au}^{2+}%$-Implanted Regions in Silicon Visualized Using a Modulated Free-Carrier Absorption Method |
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530 ASE 33.00 bkl %$\hbox {Au}^{2+}%$-Implanted Regions in Silicon Visualized Using a Modulated Free-Carrier Absorption Method Absorption coefficient (dpeaa)DE-He213 Ion-implanted silicon (dpeaa)DE-He213 Modulated free-carrier absorption (dpeaa)DE-He213 Nondestructive testing (dpeaa)DE-He213 Photothermal visualization (dpeaa)DE-He213 |
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ddc 530 bkl 33.00 misc Absorption coefficient misc Ion-implanted silicon misc Modulated free-carrier absorption misc Nondestructive testing misc Photothermal visualization |
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%$\hbox {Au}^{2+}%$-Implanted Regions in Silicon Visualized Using a Modulated Free-Carrier Absorption Method |
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%$\hbox {Au}^{2+}%$-Implanted Regions in Silicon Visualized Using a Modulated Free-Carrier Absorption Method |
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Maliński, M. |
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International journal of thermophysics |
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Maliński, M. Chrobak, Ł. Madej, W. Kukharchyk, N. |
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%$\hbox {au}^{2+}%$-implanted regions in silicon visualized using a modulated free-carrier absorption method |
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%$\hbox {Au}^{2+}%$-Implanted Regions in Silicon Visualized Using a Modulated Free-Carrier Absorption Method |
| abstract |
Abstract Silicon samples were implanted with %$\hbox {Au}^{2+}%$ ions of energy 100 keV and doses of %$10^{14}\,\hbox { cm}^{-2}%$. The area of the implanted region was %$2\,\hbox {mm}\times 2\,\hbox {mm}%$. The size of the Si substrate samples was %$5\,\hbox {mm}\times 5\,\hbox {mm}\times 0.4\,\hbox {mm}%$. Spatial distributions of the amplitude and profiles of the modulated free-carrier absorption (MFCA) signal of the implanted silicon samples were recorded and analyzed. The data were obtained using an experimental setup built specifically for MFCA amplitude mapping and measurements of frequency characteristics. For example, the maps and profiles showed that for 520 nm laser illumination, the MFCA amplitude in the implanted region was considerably smaller than that for the substrate. The values of the amplitude of the MFCA signal from the implanted region depended on the wavelength of illuminating light. They convey information related to the optical absorption coefficient of the implanted layers. |
| abstractGer |
Abstract Silicon samples were implanted with %$\hbox {Au}^{2+}%$ ions of energy 100 keV and doses of %$10^{14}\,\hbox { cm}^{-2}%$. The area of the implanted region was %$2\,\hbox {mm}\times 2\,\hbox {mm}%$. The size of the Si substrate samples was %$5\,\hbox {mm}\times 5\,\hbox {mm}\times 0.4\,\hbox {mm}%$. Spatial distributions of the amplitude and profiles of the modulated free-carrier absorption (MFCA) signal of the implanted silicon samples were recorded and analyzed. The data were obtained using an experimental setup built specifically for MFCA amplitude mapping and measurements of frequency characteristics. For example, the maps and profiles showed that for 520 nm laser illumination, the MFCA amplitude in the implanted region was considerably smaller than that for the substrate. The values of the amplitude of the MFCA signal from the implanted region depended on the wavelength of illuminating light. They convey information related to the optical absorption coefficient of the implanted layers. |
| abstract_unstemmed |
Abstract Silicon samples were implanted with %$\hbox {Au}^{2+}%$ ions of energy 100 keV and doses of %$10^{14}\,\hbox { cm}^{-2}%$. The area of the implanted region was %$2\,\hbox {mm}\times 2\,\hbox {mm}%$. The size of the Si substrate samples was %$5\,\hbox {mm}\times 5\,\hbox {mm}\times 0.4\,\hbox {mm}%$. Spatial distributions of the amplitude and profiles of the modulated free-carrier absorption (MFCA) signal of the implanted silicon samples were recorded and analyzed. The data were obtained using an experimental setup built specifically for MFCA amplitude mapping and measurements of frequency characteristics. For example, the maps and profiles showed that for 520 nm laser illumination, the MFCA amplitude in the implanted region was considerably smaller than that for the substrate. The values of the amplitude of the MFCA signal from the implanted region depended on the wavelength of illuminating light. They convey information related to the optical absorption coefficient of the implanted layers. |
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| container_issue |
7 |
| title_short |
%$\hbox {Au}^{2+}%$-Implanted Regions in Silicon Visualized Using a Modulated Free-Carrier Absorption Method |
| url |
https://dx.doi.org/10.1007/s10765-017-2246-2 |
| remote_bool |
true |
| author2 |
Chrobak, Ł. Madej, W. Kukharchyk, N. |
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Chrobak, Ł. Madej, W. Kukharchyk, N. |
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| doi_str |
10.1007/s10765-017-2246-2 |
| up_date |
2024-07-03T17:34:36.675Z |
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1803580160528613376 |
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| score |
7.39756 |