Ammonia response of thin films grown on GaAs using PbO + $ Bi_{2} %$ O_{3} $ mixtures

Abstract Thin oxide films exhibiting gas-sensing properties in an ammonia atmosphere have been grown on GaAs surfaces by chemically stimulated thermal oxidation. As shown by electrical measurements, the synthesized materials are n-type. We have studied the effect of thermal processes on the gas-sens...
Ausführliche Beschreibung

Gespeichert in:
Autor*in:

Kostryukov, V. F. [verfasserIn]

Mittova, I. Ya. [verfasserIn]

Format:

E-Artikel

Sprache:

Englisch

Erschienen:

2015

Schlagwörter:

GaAs

Oxide Film

Carrier Concentration

Carrier Mobility

Thermal Oxidation

Übergeordnetes Werk:

Enthalten in: Inorganic materials - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1996, 51(2015), 5 vom: 16. Apr., Seite 425-429

Übergeordnetes Werk:

volume:51 ; year:2015 ; number:5 ; day:16 ; month:04 ; pages:425-429

Links:

Volltext

DOI / URN:

10.1134/S0020168515040056

Katalog-ID:

SPR013221051

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