Photoluminescence Spectra of the 580-nm Center in Irradiated Diamonds

The formation mechanisms of the zero-phonon line optical center at 580 nm (H19 center) in photoluminescence spectra of irradiated natural diamonds and those deposited from the vapor phase were studied after their high-temperature vacuum annealing. The photoluminescence band intensity of the H19 cent...
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Autor*in:	Khomich, A. A. [verfasserIn] Khmelnitskii, R. A. [verfasserIn] Poklonskaya, O. N. [verfasserIn] Averin, A. A. [verfasserIn] Bokova-Sirosh, S. N. [verfasserIn] Poklonskii, N. A. [verfasserIn] Ralchenko, V. G. [verfasserIn] Khomich, A. V. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2019

Schlagwörter:	diamond photoluminescence zero-phonon line neutron irradiation ion implantation defect

Übergeordnetes Werk:	Enthalten in: Journal of applied spectroscopy - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1965, 86(2019), 4 vom: Sept., Seite 597-605
Übergeordnetes Werk:	volume:86 ; year:2019 ; number:4 ; month:09 ; pages:597-605

Links:	Volltext

DOI / URN:	10.1007/s10812-019-00865-7

Katalog-ID:	SPR013513834

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520			\|a The formation mechanisms of the zero-phonon line optical center at 580 nm (H19 center) in photoluminescence spectra of irradiated natural diamonds and those deposited from the vapor phase were studied after their high-temperature vacuum annealing. The photoluminescence band intensity of the H19 center was shown to increase exponentially as the annealing temperature increased. Temperature dependences of photoluminescence spectra and local mechanical stress effects on the position and full width at half-height of the 580-nm zero-phonon line optical peak led to the conclusion that the H19 optical center was a complex intrinsic vacancy defect.
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700	1		\|a Ralchenko, V. G. \|e verfasserin \|4 aut
700	1		\|a Khomich, A. V. \|e verfasserin \|4 aut
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matchkey_str	article:15738647:2019----::htlmnsecsetafh50metrnr
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allfields	10.1007/s10812-019-00865-7 doi (DE-627)SPR013513834 (SPR)s10812-019-00865-7-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Khomich, A. A. verfasserin aut Photoluminescence Spectra of the 580-nm Center in Irradiated Diamonds 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The formation mechanisms of the zero-phonon line optical center at 580 nm (H19 center) in photoluminescence spectra of irradiated natural diamonds and those deposited from the vapor phase were studied after their high-temperature vacuum annealing. The photoluminescence band intensity of the H19 center was shown to increase exponentially as the annealing temperature increased. Temperature dependences of photoluminescence spectra and local mechanical stress effects on the position and full width at half-height of the 580-nm zero-phonon line optical peak led to the conclusion that the H19 optical center was a complex intrinsic vacancy defect. diamond (dpeaa)DE-He213 photoluminescence (dpeaa)DE-He213 zero-phonon line (dpeaa)DE-He213 neutron irradiation (dpeaa)DE-He213 ion implantation (dpeaa)DE-He213 defect (dpeaa)DE-He213 Khmelnitskii, R. A. verfasserin aut Poklonskaya, O. N. verfasserin aut Averin, A. A. verfasserin aut Bokova-Sirosh, S. N. verfasserin aut Poklonskii, N. A. verfasserin aut Ralchenko, V. G. verfasserin aut Khomich, A. V. verfasserin aut Enthalten in Journal of applied spectroscopy Dordrecht [u.a.] : Springer Science + Business Media B.V, 1965 86(2019), 4 vom: Sept., Seite 597-605 (DE-627)325609918 (DE-600)2037920-1 1573-8647 nnns volume:86 year:2019 number:4 month:09 pages:597-605 https://dx.doi.org/10.1007/s10812-019-00865-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 86 2019 4 09 597-605
spelling	10.1007/s10812-019-00865-7 doi (DE-627)SPR013513834 (SPR)s10812-019-00865-7-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Khomich, A. A. verfasserin aut Photoluminescence Spectra of the 580-nm Center in Irradiated Diamonds 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The formation mechanisms of the zero-phonon line optical center at 580 nm (H19 center) in photoluminescence spectra of irradiated natural diamonds and those deposited from the vapor phase were studied after their high-temperature vacuum annealing. The photoluminescence band intensity of the H19 center was shown to increase exponentially as the annealing temperature increased. Temperature dependences of photoluminescence spectra and local mechanical stress effects on the position and full width at half-height of the 580-nm zero-phonon line optical peak led to the conclusion that the H19 optical center was a complex intrinsic vacancy defect. diamond (dpeaa)DE-He213 photoluminescence (dpeaa)DE-He213 zero-phonon line (dpeaa)DE-He213 neutron irradiation (dpeaa)DE-He213 ion implantation (dpeaa)DE-He213 defect (dpeaa)DE-He213 Khmelnitskii, R. A. verfasserin aut Poklonskaya, O. N. verfasserin aut Averin, A. A. verfasserin aut Bokova-Sirosh, S. N. verfasserin aut Poklonskii, N. A. verfasserin aut Ralchenko, V. G. verfasserin aut Khomich, A. V. verfasserin aut Enthalten in Journal of applied spectroscopy Dordrecht [u.a.] : Springer Science + Business Media B.V, 1965 86(2019), 4 vom: Sept., Seite 597-605 (DE-627)325609918 (DE-600)2037920-1 1573-8647 nnns volume:86 year:2019 number:4 month:09 pages:597-605 https://dx.doi.org/10.1007/s10812-019-00865-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 86 2019 4 09 597-605
allfields_unstemmed	10.1007/s10812-019-00865-7 doi (DE-627)SPR013513834 (SPR)s10812-019-00865-7-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Khomich, A. A. verfasserin aut Photoluminescence Spectra of the 580-nm Center in Irradiated Diamonds 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The formation mechanisms of the zero-phonon line optical center at 580 nm (H19 center) in photoluminescence spectra of irradiated natural diamonds and those deposited from the vapor phase were studied after their high-temperature vacuum annealing. The photoluminescence band intensity of the H19 center was shown to increase exponentially as the annealing temperature increased. Temperature dependences of photoluminescence spectra and local mechanical stress effects on the position and full width at half-height of the 580-nm zero-phonon line optical peak led to the conclusion that the H19 optical center was a complex intrinsic vacancy defect. diamond (dpeaa)DE-He213 photoluminescence (dpeaa)DE-He213 zero-phonon line (dpeaa)DE-He213 neutron irradiation (dpeaa)DE-He213 ion implantation (dpeaa)DE-He213 defect (dpeaa)DE-He213 Khmelnitskii, R. A. verfasserin aut Poklonskaya, O. N. verfasserin aut Averin, A. A. verfasserin aut Bokova-Sirosh, S. N. verfasserin aut Poklonskii, N. A. verfasserin aut Ralchenko, V. G. verfasserin aut Khomich, A. V. verfasserin aut Enthalten in Journal of applied spectroscopy Dordrecht [u.a.] : Springer Science + Business Media B.V, 1965 86(2019), 4 vom: Sept., Seite 597-605 (DE-627)325609918 (DE-600)2037920-1 1573-8647 nnns volume:86 year:2019 number:4 month:09 pages:597-605 https://dx.doi.org/10.1007/s10812-019-00865-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 86 2019 4 09 597-605
allfieldsGer	10.1007/s10812-019-00865-7 doi (DE-627)SPR013513834 (SPR)s10812-019-00865-7-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Khomich, A. A. verfasserin aut Photoluminescence Spectra of the 580-nm Center in Irradiated Diamonds 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The formation mechanisms of the zero-phonon line optical center at 580 nm (H19 center) in photoluminescence spectra of irradiated natural diamonds and those deposited from the vapor phase were studied after their high-temperature vacuum annealing. The photoluminescence band intensity of the H19 center was shown to increase exponentially as the annealing temperature increased. Temperature dependences of photoluminescence spectra and local mechanical stress effects on the position and full width at half-height of the 580-nm zero-phonon line optical peak led to the conclusion that the H19 optical center was a complex intrinsic vacancy defect. diamond (dpeaa)DE-He213 photoluminescence (dpeaa)DE-He213 zero-phonon line (dpeaa)DE-He213 neutron irradiation (dpeaa)DE-He213 ion implantation (dpeaa)DE-He213 defect (dpeaa)DE-He213 Khmelnitskii, R. A. verfasserin aut Poklonskaya, O. N. verfasserin aut Averin, A. A. verfasserin aut Bokova-Sirosh, S. N. verfasserin aut Poklonskii, N. A. verfasserin aut Ralchenko, V. G. verfasserin aut Khomich, A. V. verfasserin aut Enthalten in Journal of applied spectroscopy Dordrecht [u.a.] : Springer Science + Business Media B.V, 1965 86(2019), 4 vom: Sept., Seite 597-605 (DE-627)325609918 (DE-600)2037920-1 1573-8647 nnns volume:86 year:2019 number:4 month:09 pages:597-605 https://dx.doi.org/10.1007/s10812-019-00865-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 86 2019 4 09 597-605
allfieldsSound	10.1007/s10812-019-00865-7 doi (DE-627)SPR013513834 (SPR)s10812-019-00865-7-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Khomich, A. A. verfasserin aut Photoluminescence Spectra of the 580-nm Center in Irradiated Diamonds 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The formation mechanisms of the zero-phonon line optical center at 580 nm (H19 center) in photoluminescence spectra of irradiated natural diamonds and those deposited from the vapor phase were studied after their high-temperature vacuum annealing. The photoluminescence band intensity of the H19 center was shown to increase exponentially as the annealing temperature increased. Temperature dependences of photoluminescence spectra and local mechanical stress effects on the position and full width at half-height of the 580-nm zero-phonon line optical peak led to the conclusion that the H19 optical center was a complex intrinsic vacancy defect. diamond (dpeaa)DE-He213 photoluminescence (dpeaa)DE-He213 zero-phonon line (dpeaa)DE-He213 neutron irradiation (dpeaa)DE-He213 ion implantation (dpeaa)DE-He213 defect (dpeaa)DE-He213 Khmelnitskii, R. A. verfasserin aut Poklonskaya, O. N. verfasserin aut Averin, A. A. verfasserin aut Bokova-Sirosh, S. N. verfasserin aut Poklonskii, N. A. verfasserin aut Ralchenko, V. G. verfasserin aut Khomich, A. V. verfasserin aut Enthalten in Journal of applied spectroscopy Dordrecht [u.a.] : Springer Science + Business Media B.V, 1965 86(2019), 4 vom: Sept., Seite 597-605 (DE-627)325609918 (DE-600)2037920-1 1573-8647 nnns volume:86 year:2019 number:4 month:09 pages:597-605 https://dx.doi.org/10.1007/s10812-019-00865-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 86 2019 4 09 597-605
language	English
source	Enthalten in Journal of applied spectroscopy 86(2019), 4 vom: Sept., Seite 597-605 volume:86 year:2019 number:4 month:09 pages:597-605
sourceStr	Enthalten in Journal of applied spectroscopy 86(2019), 4 vom: Sept., Seite 597-605 volume:86 year:2019 number:4 month:09 pages:597-605
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	diamond photoluminescence zero-phonon line neutron irradiation ion implantation defect
dewey-raw	530
isfreeaccess_bool	false
container_title	Journal of applied spectroscopy
authorswithroles_txt_mv	Khomich, A. A. @@aut@@ Khmelnitskii, R. A. @@aut@@ Poklonskaya, O. N. @@aut@@ Averin, A. A. @@aut@@ Bokova-Sirosh, S. N. @@aut@@ Poklonskii, N. A. @@aut@@ Ralchenko, V. G. @@aut@@ Khomich, A. V. @@aut@@
publishDateDaySort_date	2019-09-01T00:00:00Z
hierarchy_top_id	325609918
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author	Khomich, A. A.
spellingShingle	Khomich, A. A. ddc 530 bkl 33.00 misc diamond misc photoluminescence misc zero-phonon line misc neutron irradiation misc ion implantation misc defect Photoluminescence Spectra of the 580-nm Center in Irradiated Diamonds
authorStr	Khomich, A. A.
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topic_title	530 ASE 33.00 bkl Photoluminescence Spectra of the 580-nm Center in Irradiated Diamonds diamond (dpeaa)DE-He213 photoluminescence (dpeaa)DE-He213 zero-phonon line (dpeaa)DE-He213 neutron irradiation (dpeaa)DE-He213 ion implantation (dpeaa)DE-He213 defect (dpeaa)DE-He213
topic	ddc 530 bkl 33.00 misc diamond misc photoluminescence misc zero-phonon line misc neutron irradiation misc ion implantation misc defect
topic_unstemmed	ddc 530 bkl 33.00 misc diamond misc photoluminescence misc zero-phonon line misc neutron irradiation misc ion implantation misc defect
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title	Photoluminescence Spectra of the 580-nm Center in Irradiated Diamonds
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title_full	Photoluminescence Spectra of the 580-nm Center in Irradiated Diamonds
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author_browse	Khomich, A. A. Khmelnitskii, R. A. Poklonskaya, O. N. Averin, A. A. Bokova-Sirosh, S. N. Poklonskii, N. A. Ralchenko, V. G. Khomich, A. V.
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title_sort	photoluminescence spectra of the 580-nm center in irradiated diamonds
title_auth	Photoluminescence Spectra of the 580-nm Center in Irradiated Diamonds
abstract	The formation mechanisms of the zero-phonon line optical center at 580 nm (H19 center) in photoluminescence spectra of irradiated natural diamonds and those deposited from the vapor phase were studied after their high-temperature vacuum annealing. The photoluminescence band intensity of the H19 center was shown to increase exponentially as the annealing temperature increased. Temperature dependences of photoluminescence spectra and local mechanical stress effects on the position and full width at half-height of the 580-nm zero-phonon line optical peak led to the conclusion that the H19 optical center was a complex intrinsic vacancy defect.
abstractGer	The formation mechanisms of the zero-phonon line optical center at 580 nm (H19 center) in photoluminescence spectra of irradiated natural diamonds and those deposited from the vapor phase were studied after their high-temperature vacuum annealing. The photoluminescence band intensity of the H19 center was shown to increase exponentially as the annealing temperature increased. Temperature dependences of photoluminescence spectra and local mechanical stress effects on the position and full width at half-height of the 580-nm zero-phonon line optical peak led to the conclusion that the H19 optical center was a complex intrinsic vacancy defect.
abstract_unstemmed	The formation mechanisms of the zero-phonon line optical center at 580 nm (H19 center) in photoluminescence spectra of irradiated natural diamonds and those deposited from the vapor phase were studied after their high-temperature vacuum annealing. The photoluminescence band intensity of the H19 center was shown to increase exponentially as the annealing temperature increased. Temperature dependences of photoluminescence spectra and local mechanical stress effects on the position and full width at half-height of the 580-nm zero-phonon line optical peak led to the conclusion that the H19 optical center was a complex intrinsic vacancy defect.
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container_issue	4
title_short	Photoluminescence Spectra of the 580-nm Center in Irradiated Diamonds
url	https://dx.doi.org/10.1007/s10812-019-00865-7
remote_bool	true
author2	Khmelnitskii, R. A. Poklonskaya, O. N. Averin, A. A. Bokova-Sirosh, S. N. Poklonskii, N. A. Ralchenko, V. G. Khomich, A. V.
author2Str	Khmelnitskii, R. A. Poklonskaya, O. N. Averin, A. A. Bokova-Sirosh, S. N. Poklonskii, N. A. Ralchenko, V. G. Khomich, A. V.
ppnlink	325609918
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isOA_txt	false
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doi_str	10.1007/s10812-019-00865-7
up_date	2024-07-03T20:15:10.203Z
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Photoluminescence Spectra of the 580-nm Center in Irradiated Diamonds

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Vorhandene Bände

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