Electrical properties of extruded Gd-doped $ Bi_{85} %$ Sb_{15} $

Abstract We have studied the effect of Gd doping on the electrical properties of extruded $ Bi_{85} %$ Sb_{15} $ in the range 77–300 K. The results indicate that gadolinium creates shallow donor levels in $ Bi_{85} %$ Sb_{15} $ and that the carriers in this material are scattered predominantly by ph...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Abdinova, G. D. [verfasserIn] Bagieva, G. Z. [verfasserIn] Tagiev, M. M. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2011

Schlagwörter:	Bismuth Gadolinium Electron Mobility Defect Density Azerbaijan

Übergeordnetes Werk:	Enthalten in: Inorganic materials - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1996, 44(2011), 4 vom: 25. März
Übergeordnetes Werk:	volume:44 ; year:2011 ; number:4 ; day:25 ; month:03

Links:	Volltext

DOI / URN:	10.1134/S0020168508040146

Katalog-ID:	SPR013574450

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520			\|a Abstract We have studied the effect of Gd doping on the electrical properties of extruded $ Bi_{85} %$ Sb_{15} $ in the range 77–300 K. The results indicate that gadolinium creates shallow donor levels in $ Bi_{85} %$ Sb_{15} $ and that the carriers in this material are scattered predominantly by phonons. Annealing at 230°C for 5 h reduces the defect density and increases the electron mobility in extruded $ Bi_{85} %$ Sb_{15} $.
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700	1		\|a Tagiev, M. M. \|e verfasserin \|4 aut
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hierarchy_sort_str	2011
bklnumber	35.40
publishDate	2011
allfields	10.1134/S0020168508040146 doi (DE-627)SPR013574450 (SPR)S0020168508040146-e DE-627 ger DE-627 rakwb eng 540 600 670 ASE 35.40 bkl Abdinova, G. D. verfasserin aut Electrical properties of extruded Gd-doped $ Bi_{85} %$ Sb_{15} $ 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have studied the effect of Gd doping on the electrical properties of extruded $ Bi_{85} %$ Sb_{15} $ in the range 77–300 K. The results indicate that gadolinium creates shallow donor levels in $ Bi_{85} %$ Sb_{15} $ and that the carriers in this material are scattered predominantly by phonons. Annealing at 230°C for 5 h reduces the defect density and increases the electron mobility in extruded $ Bi_{85} %$ Sb_{15} $. Bismuth (dpeaa)DE-He213 Gadolinium (dpeaa)DE-He213 Electron Mobility (dpeaa)DE-He213 Defect Density (dpeaa)DE-He213 Azerbaijan (dpeaa)DE-He213 Bagieva, G. Z. verfasserin aut Tagiev, M. M. verfasserin aut Enthalten in Inorganic materials Dordrecht [u.a.] : Springer Science + Business Media B.V, 1996 44(2011), 4 vom: 25. März (DE-627)334292719 (DE-600)2057339-X 1608-3172 nnns volume:44 year:2011 number:4 day:25 month:03 https://dx.doi.org/10.1134/S0020168508040146 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.40 ASE AR 44 2011 4 25 03
spelling	10.1134/S0020168508040146 doi (DE-627)SPR013574450 (SPR)S0020168508040146-e DE-627 ger DE-627 rakwb eng 540 600 670 ASE 35.40 bkl Abdinova, G. D. verfasserin aut Electrical properties of extruded Gd-doped $ Bi_{85} %$ Sb_{15} $ 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have studied the effect of Gd doping on the electrical properties of extruded $ Bi_{85} %$ Sb_{15} $ in the range 77–300 K. The results indicate that gadolinium creates shallow donor levels in $ Bi_{85} %$ Sb_{15} $ and that the carriers in this material are scattered predominantly by phonons. Annealing at 230°C for 5 h reduces the defect density and increases the electron mobility in extruded $ Bi_{85} %$ Sb_{15} $. Bismuth (dpeaa)DE-He213 Gadolinium (dpeaa)DE-He213 Electron Mobility (dpeaa)DE-He213 Defect Density (dpeaa)DE-He213 Azerbaijan (dpeaa)DE-He213 Bagieva, G. Z. verfasserin aut Tagiev, M. M. verfasserin aut Enthalten in Inorganic materials Dordrecht [u.a.] : Springer Science + Business Media B.V, 1996 44(2011), 4 vom: 25. März (DE-627)334292719 (DE-600)2057339-X 1608-3172 nnns volume:44 year:2011 number:4 day:25 month:03 https://dx.doi.org/10.1134/S0020168508040146 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.40 ASE AR 44 2011 4 25 03
allfields_unstemmed	10.1134/S0020168508040146 doi (DE-627)SPR013574450 (SPR)S0020168508040146-e DE-627 ger DE-627 rakwb eng 540 600 670 ASE 35.40 bkl Abdinova, G. D. verfasserin aut Electrical properties of extruded Gd-doped $ Bi_{85} %$ Sb_{15} $ 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have studied the effect of Gd doping on the electrical properties of extruded $ Bi_{85} %$ Sb_{15} $ in the range 77–300 K. The results indicate that gadolinium creates shallow donor levels in $ Bi_{85} %$ Sb_{15} $ and that the carriers in this material are scattered predominantly by phonons. Annealing at 230°C for 5 h reduces the defect density and increases the electron mobility in extruded $ Bi_{85} %$ Sb_{15} $. Bismuth (dpeaa)DE-He213 Gadolinium (dpeaa)DE-He213 Electron Mobility (dpeaa)DE-He213 Defect Density (dpeaa)DE-He213 Azerbaijan (dpeaa)DE-He213 Bagieva, G. Z. verfasserin aut Tagiev, M. M. verfasserin aut Enthalten in Inorganic materials Dordrecht [u.a.] : Springer Science + Business Media B.V, 1996 44(2011), 4 vom: 25. März (DE-627)334292719 (DE-600)2057339-X 1608-3172 nnns volume:44 year:2011 number:4 day:25 month:03 https://dx.doi.org/10.1134/S0020168508040146 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.40 ASE AR 44 2011 4 25 03
allfieldsGer	10.1134/S0020168508040146 doi (DE-627)SPR013574450 (SPR)S0020168508040146-e DE-627 ger DE-627 rakwb eng 540 600 670 ASE 35.40 bkl Abdinova, G. D. verfasserin aut Electrical properties of extruded Gd-doped $ Bi_{85} %$ Sb_{15} $ 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have studied the effect of Gd doping on the electrical properties of extruded $ Bi_{85} %$ Sb_{15} $ in the range 77–300 K. The results indicate that gadolinium creates shallow donor levels in $ Bi_{85} %$ Sb_{15} $ and that the carriers in this material are scattered predominantly by phonons. Annealing at 230°C for 5 h reduces the defect density and increases the electron mobility in extruded $ Bi_{85} %$ Sb_{15} $. Bismuth (dpeaa)DE-He213 Gadolinium (dpeaa)DE-He213 Electron Mobility (dpeaa)DE-He213 Defect Density (dpeaa)DE-He213 Azerbaijan (dpeaa)DE-He213 Bagieva, G. Z. verfasserin aut Tagiev, M. M. verfasserin aut Enthalten in Inorganic materials Dordrecht [u.a.] : Springer Science + Business Media B.V, 1996 44(2011), 4 vom: 25. März (DE-627)334292719 (DE-600)2057339-X 1608-3172 nnns volume:44 year:2011 number:4 day:25 month:03 https://dx.doi.org/10.1134/S0020168508040146 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.40 ASE AR 44 2011 4 25 03
allfieldsSound	10.1134/S0020168508040146 doi (DE-627)SPR013574450 (SPR)S0020168508040146-e DE-627 ger DE-627 rakwb eng 540 600 670 ASE 35.40 bkl Abdinova, G. D. verfasserin aut Electrical properties of extruded Gd-doped $ Bi_{85} %$ Sb_{15} $ 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We have studied the effect of Gd doping on the electrical properties of extruded $ Bi_{85} %$ Sb_{15} $ in the range 77–300 K. The results indicate that gadolinium creates shallow donor levels in $ Bi_{85} %$ Sb_{15} $ and that the carriers in this material are scattered predominantly by phonons. Annealing at 230°C for 5 h reduces the defect density and increases the electron mobility in extruded $ Bi_{85} %$ Sb_{15} $. Bismuth (dpeaa)DE-He213 Gadolinium (dpeaa)DE-He213 Electron Mobility (dpeaa)DE-He213 Defect Density (dpeaa)DE-He213 Azerbaijan (dpeaa)DE-He213 Bagieva, G. Z. verfasserin aut Tagiev, M. M. verfasserin aut Enthalten in Inorganic materials Dordrecht [u.a.] : Springer Science + Business Media B.V, 1996 44(2011), 4 vom: 25. März (DE-627)334292719 (DE-600)2057339-X 1608-3172 nnns volume:44 year:2011 number:4 day:25 month:03 https://dx.doi.org/10.1134/S0020168508040146 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.40 ASE AR 44 2011 4 25 03
language	English
source	Enthalten in Inorganic materials 44(2011), 4 vom: 25. März volume:44 year:2011 number:4 day:25 month:03
sourceStr	Enthalten in Inorganic materials 44(2011), 4 vom: 25. März volume:44 year:2011 number:4 day:25 month:03
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Bismuth Gadolinium Electron Mobility Defect Density Azerbaijan
dewey-raw	540
isfreeaccess_bool	false
container_title	Inorganic materials
authorswithroles_txt_mv	Abdinova, G. D. @@aut@@ Bagieva, G. Z. @@aut@@ Tagiev, M. M. @@aut@@
publishDateDaySort_date	2011-03-25T00:00:00Z
hierarchy_top_id	334292719
dewey-sort	3540
id	SPR013574450
language_de	englisch
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author	Abdinova, G. D.
spellingShingle	Abdinova, G. D. ddc 540 bkl 35.40 misc Bismuth misc Gadolinium misc Electron Mobility misc Defect Density misc Azerbaijan Electrical properties of extruded Gd-doped $ Bi_{85} %$ Sb_{15} $
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topic_title	540 600 670 ASE 35.40 bkl Electrical properties of extruded Gd-doped $ Bi_{85} %$ Sb_{15} $ Bismuth (dpeaa)DE-He213 Gadolinium (dpeaa)DE-He213 Electron Mobility (dpeaa)DE-He213 Defect Density (dpeaa)DE-He213 Azerbaijan (dpeaa)DE-He213
topic	ddc 540 bkl 35.40 misc Bismuth misc Gadolinium misc Electron Mobility misc Defect Density misc Azerbaijan
topic_unstemmed	ddc 540 bkl 35.40 misc Bismuth misc Gadolinium misc Electron Mobility misc Defect Density misc Azerbaijan
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title	Electrical properties of extruded Gd-doped $ Bi_{85} %$ Sb_{15} $
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title_full	Electrical properties of extruded Gd-doped $ Bi_{85} %$ Sb_{15} $
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title_sort	electrical properties of extruded gd-doped $ bi_{85} %$ sb_{15} $
title_auth	Electrical properties of extruded Gd-doped $ Bi_{85} %$ Sb_{15} $
abstract	Abstract We have studied the effect of Gd doping on the electrical properties of extruded $ Bi_{85} %$ Sb_{15} $ in the range 77–300 K. The results indicate that gadolinium creates shallow donor levels in $ Bi_{85} %$ Sb_{15} $ and that the carriers in this material are scattered predominantly by phonons. Annealing at 230°C for 5 h reduces the defect density and increases the electron mobility in extruded $ Bi_{85} %$ Sb_{15} $.
abstractGer	Abstract We have studied the effect of Gd doping on the electrical properties of extruded $ Bi_{85} %$ Sb_{15} $ in the range 77–300 K. The results indicate that gadolinium creates shallow donor levels in $ Bi_{85} %$ Sb_{15} $ and that the carriers in this material are scattered predominantly by phonons. Annealing at 230°C for 5 h reduces the defect density and increases the electron mobility in extruded $ Bi_{85} %$ Sb_{15} $.
abstract_unstemmed	Abstract We have studied the effect of Gd doping on the electrical properties of extruded $ Bi_{85} %$ Sb_{15} $ in the range 77–300 K. The results indicate that gadolinium creates shallow donor levels in $ Bi_{85} %$ Sb_{15} $ and that the carriers in this material are scattered predominantly by phonons. Annealing at 230°C for 5 h reduces the defect density and increases the electron mobility in extruded $ Bi_{85} %$ Sb_{15} $.
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title_short	Electrical properties of extruded Gd-doped $ Bi_{85} %$ Sb_{15} $
url	https://dx.doi.org/10.1134/S0020168508040146
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up_date	2024-07-03T20:41:09.071Z
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D.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Electrical properties of extruded Gd-doped $ Bi_{85} %$ Sb_{15} $</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2011</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract We have studied the effect of Gd doping on the electrical properties of extruded $ Bi_{85} %$ Sb_{15} $ in the range 77–300 K. The results indicate that gadolinium creates shallow donor levels in $ Bi_{85} %$ Sb_{15} $ and that the carriers in this material are scattered predominantly by phonons. 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Electrical properties of extruded Gd-doped $ Bi_{85} %$ Sb_{15} $

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