Investigation and comparison of bare-dihydrogenated junction rectifiers of graphene and silicene nanoribbons

Abstract Although silicon and similar bulk materials are widely used in today’s integrated circuits, the transition to lower dimensional structures such as two-dimensional graphene, one-dimensional graphene nanoribbons (GNRs) and silicene nanoribbons (SiNRs) seems inescapable due to the increment of...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Yamacli, Serhan [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2016

Schlagwörter:	Graphene nanoribbons Silicene nanoribbons Rectifiers Dynamical behaviour

Übergeordnetes Werk:	Enthalten in: Journal of computational electronics - Dordrecht : Springer Science + Business Media B.V., 2002, 15(2016), 2 vom: 01. März, Seite 389-399
Übergeordnetes Werk:	volume:15 ; year:2016 ; number:2 ; day:01 ; month:03 ; pages:389-399

Links:	Volltext

DOI / URN:	10.1007/s10825-016-0805-6

Katalog-ID:	SPR013587587

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520			\|a Abstract Although silicon and similar bulk materials are widely used in today’s integrated circuits, the transition to lower dimensional structures such as two-dimensional graphene, one-dimensional graphene nanoribbons (GNRs) and silicene nanoribbons (SiNRs) seems inescapable due to the increment of inelastic scattering and related performance degrading effects in bulk circuit components. In this context, GNRs and SiNRs provide advantages such as low area consumption and the adjustment of their electronic behaviours by edge states and widths. On the other hand, rectifiers together with their static and dynamic behaviours constitute the basics of the electronics technology. In this paper, rectifier characteristics of bare-dihydrogenated junctions of GNR and SiNR structures are investigated and compared utilizing first-principles approach. Density functional theory in combination with non-equilibrium Green’s function formalism are used to obtain current–voltage characteristics, transmission eigenstates and dynamic electron densities of the considered GNR and SiNR rectifiers and then these quantities are processed to obtain the dynamical resistance, junction capacitance and time constants of these structures, which is essential for graphene and silicene based electronics design. The paper is concluded with the discussion of the large-signal and small-signal performances of the considered GNR and SiNR rectifiers for commercial integrated circuit applications.
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author_variant	s y sy
matchkey_str	article:15728137:2016----::netgtoadoprsnfaeiyrgntducinetfesfrpe
hierarchy_sort_str	2016
bklnumber	53.03 53.52 54.76
publishDate	2016
allfields	10.1007/s10825-016-0805-6 doi (DE-627)SPR013587587 (SPR)s10825-016-0805-6-e DE-627 ger DE-627 rakwb eng 004 ASE 53.03 bkl 53.52 bkl 54.76 bkl Yamacli, Serhan verfasserin aut Investigation and comparison of bare-dihydrogenated junction rectifiers of graphene and silicene nanoribbons 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Although silicon and similar bulk materials are widely used in today’s integrated circuits, the transition to lower dimensional structures such as two-dimensional graphene, one-dimensional graphene nanoribbons (GNRs) and silicene nanoribbons (SiNRs) seems inescapable due to the increment of inelastic scattering and related performance degrading effects in bulk circuit components. In this context, GNRs and SiNRs provide advantages such as low area consumption and the adjustment of their electronic behaviours by edge states and widths. On the other hand, rectifiers together with their static and dynamic behaviours constitute the basics of the electronics technology. In this paper, rectifier characteristics of bare-dihydrogenated junctions of GNR and SiNR structures are investigated and compared utilizing first-principles approach. Density functional theory in combination with non-equilibrium Green’s function formalism are used to obtain current–voltage characteristics, transmission eigenstates and dynamic electron densities of the considered GNR and SiNR rectifiers and then these quantities are processed to obtain the dynamical resistance, junction capacitance and time constants of these structures, which is essential for graphene and silicene based electronics design. The paper is concluded with the discussion of the large-signal and small-signal performances of the considered GNR and SiNR rectifiers for commercial integrated circuit applications. Graphene nanoribbons (dpeaa)DE-He213 Silicene nanoribbons (dpeaa)DE-He213 Rectifiers (dpeaa)DE-He213 Dynamical behaviour (dpeaa)DE-He213 Enthalten in Journal of computational electronics Dordrecht : Springer Science + Business Media B.V., 2002 15(2016), 2 vom: 01. März, Seite 389-399 (DE-627)340872063 (DE-600)2065612-9 1572-8137 nnns volume:15 year:2016 number:2 day:01 month:03 pages:389-399 https://dx.doi.org/10.1007/s10825-016-0805-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.03 ASE 53.52 ASE 54.76 ASE AR 15 2016 2 01 03 389-399
spelling	10.1007/s10825-016-0805-6 doi (DE-627)SPR013587587 (SPR)s10825-016-0805-6-e DE-627 ger DE-627 rakwb eng 004 ASE 53.03 bkl 53.52 bkl 54.76 bkl Yamacli, Serhan verfasserin aut Investigation and comparison of bare-dihydrogenated junction rectifiers of graphene and silicene nanoribbons 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Although silicon and similar bulk materials are widely used in today’s integrated circuits, the transition to lower dimensional structures such as two-dimensional graphene, one-dimensional graphene nanoribbons (GNRs) and silicene nanoribbons (SiNRs) seems inescapable due to the increment of inelastic scattering and related performance degrading effects in bulk circuit components. In this context, GNRs and SiNRs provide advantages such as low area consumption and the adjustment of their electronic behaviours by edge states and widths. On the other hand, rectifiers together with their static and dynamic behaviours constitute the basics of the electronics technology. In this paper, rectifier characteristics of bare-dihydrogenated junctions of GNR and SiNR structures are investigated and compared utilizing first-principles approach. Density functional theory in combination with non-equilibrium Green’s function formalism are used to obtain current–voltage characteristics, transmission eigenstates and dynamic electron densities of the considered GNR and SiNR rectifiers and then these quantities are processed to obtain the dynamical resistance, junction capacitance and time constants of these structures, which is essential for graphene and silicene based electronics design. The paper is concluded with the discussion of the large-signal and small-signal performances of the considered GNR and SiNR rectifiers for commercial integrated circuit applications. Graphene nanoribbons (dpeaa)DE-He213 Silicene nanoribbons (dpeaa)DE-He213 Rectifiers (dpeaa)DE-He213 Dynamical behaviour (dpeaa)DE-He213 Enthalten in Journal of computational electronics Dordrecht : Springer Science + Business Media B.V., 2002 15(2016), 2 vom: 01. März, Seite 389-399 (DE-627)340872063 (DE-600)2065612-9 1572-8137 nnns volume:15 year:2016 number:2 day:01 month:03 pages:389-399 https://dx.doi.org/10.1007/s10825-016-0805-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.03 ASE 53.52 ASE 54.76 ASE AR 15 2016 2 01 03 389-399
allfields_unstemmed	10.1007/s10825-016-0805-6 doi (DE-627)SPR013587587 (SPR)s10825-016-0805-6-e DE-627 ger DE-627 rakwb eng 004 ASE 53.03 bkl 53.52 bkl 54.76 bkl Yamacli, Serhan verfasserin aut Investigation and comparison of bare-dihydrogenated junction rectifiers of graphene and silicene nanoribbons 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Although silicon and similar bulk materials are widely used in today’s integrated circuits, the transition to lower dimensional structures such as two-dimensional graphene, one-dimensional graphene nanoribbons (GNRs) and silicene nanoribbons (SiNRs) seems inescapable due to the increment of inelastic scattering and related performance degrading effects in bulk circuit components. In this context, GNRs and SiNRs provide advantages such as low area consumption and the adjustment of their electronic behaviours by edge states and widths. On the other hand, rectifiers together with their static and dynamic behaviours constitute the basics of the electronics technology. In this paper, rectifier characteristics of bare-dihydrogenated junctions of GNR and SiNR structures are investigated and compared utilizing first-principles approach. Density functional theory in combination with non-equilibrium Green’s function formalism are used to obtain current–voltage characteristics, transmission eigenstates and dynamic electron densities of the considered GNR and SiNR rectifiers and then these quantities are processed to obtain the dynamical resistance, junction capacitance and time constants of these structures, which is essential for graphene and silicene based electronics design. The paper is concluded with the discussion of the large-signal and small-signal performances of the considered GNR and SiNR rectifiers for commercial integrated circuit applications. Graphene nanoribbons (dpeaa)DE-He213 Silicene nanoribbons (dpeaa)DE-He213 Rectifiers (dpeaa)DE-He213 Dynamical behaviour (dpeaa)DE-He213 Enthalten in Journal of computational electronics Dordrecht : Springer Science + Business Media B.V., 2002 15(2016), 2 vom: 01. März, Seite 389-399 (DE-627)340872063 (DE-600)2065612-9 1572-8137 nnns volume:15 year:2016 number:2 day:01 month:03 pages:389-399 https://dx.doi.org/10.1007/s10825-016-0805-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.03 ASE 53.52 ASE 54.76 ASE AR 15 2016 2 01 03 389-399
allfieldsGer	10.1007/s10825-016-0805-6 doi (DE-627)SPR013587587 (SPR)s10825-016-0805-6-e DE-627 ger DE-627 rakwb eng 004 ASE 53.03 bkl 53.52 bkl 54.76 bkl Yamacli, Serhan verfasserin aut Investigation and comparison of bare-dihydrogenated junction rectifiers of graphene and silicene nanoribbons 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Although silicon and similar bulk materials are widely used in today’s integrated circuits, the transition to lower dimensional structures such as two-dimensional graphene, one-dimensional graphene nanoribbons (GNRs) and silicene nanoribbons (SiNRs) seems inescapable due to the increment of inelastic scattering and related performance degrading effects in bulk circuit components. In this context, GNRs and SiNRs provide advantages such as low area consumption and the adjustment of their electronic behaviours by edge states and widths. On the other hand, rectifiers together with their static and dynamic behaviours constitute the basics of the electronics technology. In this paper, rectifier characteristics of bare-dihydrogenated junctions of GNR and SiNR structures are investigated and compared utilizing first-principles approach. Density functional theory in combination with non-equilibrium Green’s function formalism are used to obtain current–voltage characteristics, transmission eigenstates and dynamic electron densities of the considered GNR and SiNR rectifiers and then these quantities are processed to obtain the dynamical resistance, junction capacitance and time constants of these structures, which is essential for graphene and silicene based electronics design. The paper is concluded with the discussion of the large-signal and small-signal performances of the considered GNR and SiNR rectifiers for commercial integrated circuit applications. Graphene nanoribbons (dpeaa)DE-He213 Silicene nanoribbons (dpeaa)DE-He213 Rectifiers (dpeaa)DE-He213 Dynamical behaviour (dpeaa)DE-He213 Enthalten in Journal of computational electronics Dordrecht : Springer Science + Business Media B.V., 2002 15(2016), 2 vom: 01. März, Seite 389-399 (DE-627)340872063 (DE-600)2065612-9 1572-8137 nnns volume:15 year:2016 number:2 day:01 month:03 pages:389-399 https://dx.doi.org/10.1007/s10825-016-0805-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.03 ASE 53.52 ASE 54.76 ASE AR 15 2016 2 01 03 389-399
allfieldsSound	10.1007/s10825-016-0805-6 doi (DE-627)SPR013587587 (SPR)s10825-016-0805-6-e DE-627 ger DE-627 rakwb eng 004 ASE 53.03 bkl 53.52 bkl 54.76 bkl Yamacli, Serhan verfasserin aut Investigation and comparison of bare-dihydrogenated junction rectifiers of graphene and silicene nanoribbons 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Although silicon and similar bulk materials are widely used in today’s integrated circuits, the transition to lower dimensional structures such as two-dimensional graphene, one-dimensional graphene nanoribbons (GNRs) and silicene nanoribbons (SiNRs) seems inescapable due to the increment of inelastic scattering and related performance degrading effects in bulk circuit components. In this context, GNRs and SiNRs provide advantages such as low area consumption and the adjustment of their electronic behaviours by edge states and widths. On the other hand, rectifiers together with their static and dynamic behaviours constitute the basics of the electronics technology. In this paper, rectifier characteristics of bare-dihydrogenated junctions of GNR and SiNR structures are investigated and compared utilizing first-principles approach. Density functional theory in combination with non-equilibrium Green’s function formalism are used to obtain current–voltage characteristics, transmission eigenstates and dynamic electron densities of the considered GNR and SiNR rectifiers and then these quantities are processed to obtain the dynamical resistance, junction capacitance and time constants of these structures, which is essential for graphene and silicene based electronics design. The paper is concluded with the discussion of the large-signal and small-signal performances of the considered GNR and SiNR rectifiers for commercial integrated circuit applications. Graphene nanoribbons (dpeaa)DE-He213 Silicene nanoribbons (dpeaa)DE-He213 Rectifiers (dpeaa)DE-He213 Dynamical behaviour (dpeaa)DE-He213 Enthalten in Journal of computational electronics Dordrecht : Springer Science + Business Media B.V., 2002 15(2016), 2 vom: 01. März, Seite 389-399 (DE-627)340872063 (DE-600)2065612-9 1572-8137 nnns volume:15 year:2016 number:2 day:01 month:03 pages:389-399 https://dx.doi.org/10.1007/s10825-016-0805-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.03 ASE 53.52 ASE 54.76 ASE AR 15 2016 2 01 03 389-399
language	English
source	Enthalten in Journal of computational electronics 15(2016), 2 vom: 01. März, Seite 389-399 volume:15 year:2016 number:2 day:01 month:03 pages:389-399
sourceStr	Enthalten in Journal of computational electronics 15(2016), 2 vom: 01. März, Seite 389-399 volume:15 year:2016 number:2 day:01 month:03 pages:389-399
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Graphene nanoribbons Silicene nanoribbons Rectifiers Dynamical behaviour
dewey-raw	004
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container_title	Journal of computational electronics
authorswithroles_txt_mv	Yamacli, Serhan @@aut@@
publishDateDaySort_date	2016-03-01T00:00:00Z
hierarchy_top_id	340872063
dewey-sort	14
id	SPR013587587
language_de	englisch
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author	Yamacli, Serhan
spellingShingle	Yamacli, Serhan ddc 004 bkl 53.03 bkl 53.52 bkl 54.76 misc Graphene nanoribbons misc Silicene nanoribbons misc Rectifiers misc Dynamical behaviour Investigation and comparison of bare-dihydrogenated junction rectifiers of graphene and silicene nanoribbons
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topic_title	004 ASE 53.03 bkl 53.52 bkl 54.76 bkl Investigation and comparison of bare-dihydrogenated junction rectifiers of graphene and silicene nanoribbons Graphene nanoribbons (dpeaa)DE-He213 Silicene nanoribbons (dpeaa)DE-He213 Rectifiers (dpeaa)DE-He213 Dynamical behaviour (dpeaa)DE-He213
topic	ddc 004 bkl 53.03 bkl 53.52 bkl 54.76 misc Graphene nanoribbons misc Silicene nanoribbons misc Rectifiers misc Dynamical behaviour
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title	Investigation and comparison of bare-dihydrogenated junction rectifiers of graphene and silicene nanoribbons
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title_full	Investigation and comparison of bare-dihydrogenated junction rectifiers of graphene and silicene nanoribbons
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title_sort	investigation and comparison of bare-dihydrogenated junction rectifiers of graphene and silicene nanoribbons
title_auth	Investigation and comparison of bare-dihydrogenated junction rectifiers of graphene and silicene nanoribbons
abstract	Abstract Although silicon and similar bulk materials are widely used in today’s integrated circuits, the transition to lower dimensional structures such as two-dimensional graphene, one-dimensional graphene nanoribbons (GNRs) and silicene nanoribbons (SiNRs) seems inescapable due to the increment of inelastic scattering and related performance degrading effects in bulk circuit components. In this context, GNRs and SiNRs provide advantages such as low area consumption and the adjustment of their electronic behaviours by edge states and widths. On the other hand, rectifiers together with their static and dynamic behaviours constitute the basics of the electronics technology. In this paper, rectifier characteristics of bare-dihydrogenated junctions of GNR and SiNR structures are investigated and compared utilizing first-principles approach. Density functional theory in combination with non-equilibrium Green’s function formalism are used to obtain current–voltage characteristics, transmission eigenstates and dynamic electron densities of the considered GNR and SiNR rectifiers and then these quantities are processed to obtain the dynamical resistance, junction capacitance and time constants of these structures, which is essential for graphene and silicene based electronics design. The paper is concluded with the discussion of the large-signal and small-signal performances of the considered GNR and SiNR rectifiers for commercial integrated circuit applications.
abstractGer	Abstract Although silicon and similar bulk materials are widely used in today’s integrated circuits, the transition to lower dimensional structures such as two-dimensional graphene, one-dimensional graphene nanoribbons (GNRs) and silicene nanoribbons (SiNRs) seems inescapable due to the increment of inelastic scattering and related performance degrading effects in bulk circuit components. In this context, GNRs and SiNRs provide advantages such as low area consumption and the adjustment of their electronic behaviours by edge states and widths. On the other hand, rectifiers together with their static and dynamic behaviours constitute the basics of the electronics technology. In this paper, rectifier characteristics of bare-dihydrogenated junctions of GNR and SiNR structures are investigated and compared utilizing first-principles approach. Density functional theory in combination with non-equilibrium Green’s function formalism are used to obtain current–voltage characteristics, transmission eigenstates and dynamic electron densities of the considered GNR and SiNR rectifiers and then these quantities are processed to obtain the dynamical resistance, junction capacitance and time constants of these structures, which is essential for graphene and silicene based electronics design. The paper is concluded with the discussion of the large-signal and small-signal performances of the considered GNR and SiNR rectifiers for commercial integrated circuit applications.
abstract_unstemmed	Abstract Although silicon and similar bulk materials are widely used in today’s integrated circuits, the transition to lower dimensional structures such as two-dimensional graphene, one-dimensional graphene nanoribbons (GNRs) and silicene nanoribbons (SiNRs) seems inescapable due to the increment of inelastic scattering and related performance degrading effects in bulk circuit components. In this context, GNRs and SiNRs provide advantages such as low area consumption and the adjustment of their electronic behaviours by edge states and widths. On the other hand, rectifiers together with their static and dynamic behaviours constitute the basics of the electronics technology. In this paper, rectifier characteristics of bare-dihydrogenated junctions of GNR and SiNR structures are investigated and compared utilizing first-principles approach. Density functional theory in combination with non-equilibrium Green’s function formalism are used to obtain current–voltage characteristics, transmission eigenstates and dynamic electron densities of the considered GNR and SiNR rectifiers and then these quantities are processed to obtain the dynamical resistance, junction capacitance and time constants of these structures, which is essential for graphene and silicene based electronics design. The paper is concluded with the discussion of the large-signal and small-signal performances of the considered GNR and SiNR rectifiers for commercial integrated circuit applications.
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title_short	Investigation and comparison of bare-dihydrogenated junction rectifiers of graphene and silicene nanoribbons
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Investigation and comparison of bare-dihydrogenated junction rectifiers of graphene and silicene nanoribbons

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