Thickness mode high frequency MEMS piezoelectric micro ultrasound transducers

Abstract Thickness mode piezoelectric micro-electromechanical system (MEMS) ultrasound transducers, operating in the 50–75 MHz range, have been fabricated using a composite sol gel technique in combination with wet etching. The composite sol gel technique involves producing a PZT powder/sol composit...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Dauchy, F. [verfasserIn] Dorey, R. A. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2007

Schlagwörter:	PZT Thick Film Ultrasound Transducer pMUT

Übergeordnetes Werk:	Enthalten in: Journal of electroceramics - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1997, 19(2007), 4 vom: 13. Sept., Seite 383-386
Übergeordnetes Werk:	volume:19 ; year:2007 ; number:4 ; day:13 ; month:09 ; pages:383-386

Links:	Volltext

DOI / URN:	10.1007/s10832-007-9317-x

Katalog-ID:	SPR013728555

Internformat


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520			\|a Abstract Thickness mode piezoelectric micro-electromechanical system (MEMS) ultrasound transducers, operating in the 50–75 MHz range, have been fabricated using a composite sol gel technique in combination with wet etching. The composite sol gel technique involves producing a PZT powder/sol composite slurry, which when spun down yields films a few micrometers thick. Repeated layering, and infiltration, has been used to produce PZT films between 20 and 40 μm thick. Due to the low firing temperature (<720°C) it has also been possible to integrate these PZT films with a micro-machined silicon support wafer. These PZT thick films have been structured using a wet etching technique to create free standing pillars that have been shown to resonate in thickness mode in the frequency range of 50–75 MHz. Examples of these structures and their resonant behaviour are presented.
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912			\|a GBV_ILN_95
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912			\|a GBV_ILN_138
912			\|a GBV_ILN_150
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912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_250
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2031
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2039
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2070
912			\|a GBV_ILN_2086
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2107
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2116
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2119
912			\|a GBV_ILN_2122
912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
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912			\|a GBV_ILN_2190
912			\|a GBV_ILN_2232
912			\|a GBV_ILN_2336
912			\|a GBV_ILN_2446
912			\|a GBV_ILN_2470
912			\|a GBV_ILN_2472
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_2522
912			\|a GBV_ILN_2548
912			\|a GBV_ILN_4012
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912			\|a GBV_ILN_4126
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author_variant	f d fd r a d ra rad
matchkey_str	article:15738663:2007----::hcnsmdhgfeunyesizeetimcol
hierarchy_sort_str	2007
bklnumber	53.09
publishDate	2007
allfields	10.1007/s10832-007-9317-x doi (DE-627)SPR013728555 (SPR)s10832-007-9317-x-e DE-627 ger DE-627 rakwb eng 620 ASE 53.09 bkl Dauchy, F. verfasserin aut Thickness mode high frequency MEMS piezoelectric micro ultrasound transducers 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Thickness mode piezoelectric micro-electromechanical system (MEMS) ultrasound transducers, operating in the 50–75 MHz range, have been fabricated using a composite sol gel technique in combination with wet etching. The composite sol gel technique involves producing a PZT powder/sol composite slurry, which when spun down yields films a few micrometers thick. Repeated layering, and infiltration, has been used to produce PZT films between 20 and 40 μm thick. Due to the low firing temperature (<720°C) it has also been possible to integrate these PZT films with a micro-machined silicon support wafer. These PZT thick films have been structured using a wet etching technique to create free standing pillars that have been shown to resonate in thickness mode in the frequency range of 50–75 MHz. Examples of these structures and their resonant behaviour are presented. PZT (dpeaa)DE-He213 Thick Film (dpeaa)DE-He213 Ultrasound (dpeaa)DE-He213 Transducer (dpeaa)DE-He213 pMUT (dpeaa)DE-He213 Dorey, R. A. verfasserin aut Enthalten in Journal of electroceramics Dordrecht [u.a.] : Springer Science + Business Media B.V, 1997 19(2007), 4 vom: 13. Sept., Seite 383-386 (DE-627)268754381 (DE-600)1472395-5 1573-8663 nnns volume:19 year:2007 number:4 day:13 month:09 pages:383-386 https://dx.doi.org/10.1007/s10832-007-9317-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.09 ASE AR 19 2007 4 13 09 383-386
spelling	10.1007/s10832-007-9317-x doi (DE-627)SPR013728555 (SPR)s10832-007-9317-x-e DE-627 ger DE-627 rakwb eng 620 ASE 53.09 bkl Dauchy, F. verfasserin aut Thickness mode high frequency MEMS piezoelectric micro ultrasound transducers 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Thickness mode piezoelectric micro-electromechanical system (MEMS) ultrasound transducers, operating in the 50–75 MHz range, have been fabricated using a composite sol gel technique in combination with wet etching. The composite sol gel technique involves producing a PZT powder/sol composite slurry, which when spun down yields films a few micrometers thick. Repeated layering, and infiltration, has been used to produce PZT films between 20 and 40 μm thick. Due to the low firing temperature (<720°C) it has also been possible to integrate these PZT films with a micro-machined silicon support wafer. These PZT thick films have been structured using a wet etching technique to create free standing pillars that have been shown to resonate in thickness mode in the frequency range of 50–75 MHz. Examples of these structures and their resonant behaviour are presented. PZT (dpeaa)DE-He213 Thick Film (dpeaa)DE-He213 Ultrasound (dpeaa)DE-He213 Transducer (dpeaa)DE-He213 pMUT (dpeaa)DE-He213 Dorey, R. A. verfasserin aut Enthalten in Journal of electroceramics Dordrecht [u.a.] : Springer Science + Business Media B.V, 1997 19(2007), 4 vom: 13. Sept., Seite 383-386 (DE-627)268754381 (DE-600)1472395-5 1573-8663 nnns volume:19 year:2007 number:4 day:13 month:09 pages:383-386 https://dx.doi.org/10.1007/s10832-007-9317-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.09 ASE AR 19 2007 4 13 09 383-386
allfields_unstemmed	10.1007/s10832-007-9317-x doi (DE-627)SPR013728555 (SPR)s10832-007-9317-x-e DE-627 ger DE-627 rakwb eng 620 ASE 53.09 bkl Dauchy, F. verfasserin aut Thickness mode high frequency MEMS piezoelectric micro ultrasound transducers 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Thickness mode piezoelectric micro-electromechanical system (MEMS) ultrasound transducers, operating in the 50–75 MHz range, have been fabricated using a composite sol gel technique in combination with wet etching. The composite sol gel technique involves producing a PZT powder/sol composite slurry, which when spun down yields films a few micrometers thick. Repeated layering, and infiltration, has been used to produce PZT films between 20 and 40 μm thick. Due to the low firing temperature (<720°C) it has also been possible to integrate these PZT films with a micro-machined silicon support wafer. These PZT thick films have been structured using a wet etching technique to create free standing pillars that have been shown to resonate in thickness mode in the frequency range of 50–75 MHz. Examples of these structures and their resonant behaviour are presented. PZT (dpeaa)DE-He213 Thick Film (dpeaa)DE-He213 Ultrasound (dpeaa)DE-He213 Transducer (dpeaa)DE-He213 pMUT (dpeaa)DE-He213 Dorey, R. A. verfasserin aut Enthalten in Journal of electroceramics Dordrecht [u.a.] : Springer Science + Business Media B.V, 1997 19(2007), 4 vom: 13. Sept., Seite 383-386 (DE-627)268754381 (DE-600)1472395-5 1573-8663 nnns volume:19 year:2007 number:4 day:13 month:09 pages:383-386 https://dx.doi.org/10.1007/s10832-007-9317-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.09 ASE AR 19 2007 4 13 09 383-386
allfieldsGer	10.1007/s10832-007-9317-x doi (DE-627)SPR013728555 (SPR)s10832-007-9317-x-e DE-627 ger DE-627 rakwb eng 620 ASE 53.09 bkl Dauchy, F. verfasserin aut Thickness mode high frequency MEMS piezoelectric micro ultrasound transducers 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Thickness mode piezoelectric micro-electromechanical system (MEMS) ultrasound transducers, operating in the 50–75 MHz range, have been fabricated using a composite sol gel technique in combination with wet etching. The composite sol gel technique involves producing a PZT powder/sol composite slurry, which when spun down yields films a few micrometers thick. Repeated layering, and infiltration, has been used to produce PZT films between 20 and 40 μm thick. Due to the low firing temperature (<720°C) it has also been possible to integrate these PZT films with a micro-machined silicon support wafer. These PZT thick films have been structured using a wet etching technique to create free standing pillars that have been shown to resonate in thickness mode in the frequency range of 50–75 MHz. Examples of these structures and their resonant behaviour are presented. PZT (dpeaa)DE-He213 Thick Film (dpeaa)DE-He213 Ultrasound (dpeaa)DE-He213 Transducer (dpeaa)DE-He213 pMUT (dpeaa)DE-He213 Dorey, R. A. verfasserin aut Enthalten in Journal of electroceramics Dordrecht [u.a.] : Springer Science + Business Media B.V, 1997 19(2007), 4 vom: 13. Sept., Seite 383-386 (DE-627)268754381 (DE-600)1472395-5 1573-8663 nnns volume:19 year:2007 number:4 day:13 month:09 pages:383-386 https://dx.doi.org/10.1007/s10832-007-9317-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.09 ASE AR 19 2007 4 13 09 383-386
allfieldsSound	10.1007/s10832-007-9317-x doi (DE-627)SPR013728555 (SPR)s10832-007-9317-x-e DE-627 ger DE-627 rakwb eng 620 ASE 53.09 bkl Dauchy, F. verfasserin aut Thickness mode high frequency MEMS piezoelectric micro ultrasound transducers 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Thickness mode piezoelectric micro-electromechanical system (MEMS) ultrasound transducers, operating in the 50–75 MHz range, have been fabricated using a composite sol gel technique in combination with wet etching. The composite sol gel technique involves producing a PZT powder/sol composite slurry, which when spun down yields films a few micrometers thick. Repeated layering, and infiltration, has been used to produce PZT films between 20 and 40 μm thick. Due to the low firing temperature (<720°C) it has also been possible to integrate these PZT films with a micro-machined silicon support wafer. These PZT thick films have been structured using a wet etching technique to create free standing pillars that have been shown to resonate in thickness mode in the frequency range of 50–75 MHz. Examples of these structures and their resonant behaviour are presented. PZT (dpeaa)DE-He213 Thick Film (dpeaa)DE-He213 Ultrasound (dpeaa)DE-He213 Transducer (dpeaa)DE-He213 pMUT (dpeaa)DE-He213 Dorey, R. A. verfasserin aut Enthalten in Journal of electroceramics Dordrecht [u.a.] : Springer Science + Business Media B.V, 1997 19(2007), 4 vom: 13. Sept., Seite 383-386 (DE-627)268754381 (DE-600)1472395-5 1573-8663 nnns volume:19 year:2007 number:4 day:13 month:09 pages:383-386 https://dx.doi.org/10.1007/s10832-007-9317-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.09 ASE AR 19 2007 4 13 09 383-386
language	English
source	Enthalten in Journal of electroceramics 19(2007), 4 vom: 13. Sept., Seite 383-386 volume:19 year:2007 number:4 day:13 month:09 pages:383-386
sourceStr	Enthalten in Journal of electroceramics 19(2007), 4 vom: 13. Sept., Seite 383-386 volume:19 year:2007 number:4 day:13 month:09 pages:383-386
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	PZT Thick Film Ultrasound Transducer pMUT
dewey-raw	620
isfreeaccess_bool	false
container_title	Journal of electroceramics
authorswithroles_txt_mv	Dauchy, F. @@aut@@ Dorey, R. A. @@aut@@
publishDateDaySort_date	2007-09-13T00:00:00Z
hierarchy_top_id	268754381
dewey-sort	3620
id	SPR013728555
language_de	englisch
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author	Dauchy, F.
spellingShingle	Dauchy, F. ddc 620 bkl 53.09 misc PZT misc Thick Film misc Ultrasound misc Transducer misc pMUT Thickness mode high frequency MEMS piezoelectric micro ultrasound transducers
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topic_title	620 ASE 53.09 bkl Thickness mode high frequency MEMS piezoelectric micro ultrasound transducers PZT (dpeaa)DE-He213 Thick Film (dpeaa)DE-He213 Ultrasound (dpeaa)DE-He213 Transducer (dpeaa)DE-He213 pMUT (dpeaa)DE-He213
topic	ddc 620 bkl 53.09 misc PZT misc Thick Film misc Ultrasound misc Transducer misc pMUT
topic_unstemmed	ddc 620 bkl 53.09 misc PZT misc Thick Film misc Ultrasound misc Transducer misc pMUT
topic_browse	ddc 620 bkl 53.09 misc PZT misc Thick Film misc Ultrasound misc Transducer misc pMUT
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title	Thickness mode high frequency MEMS piezoelectric micro ultrasound transducers
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title_full	Thickness mode high frequency MEMS piezoelectric micro ultrasound transducers
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title_sort	thickness mode high frequency mems piezoelectric micro ultrasound transducers
title_auth	Thickness mode high frequency MEMS piezoelectric micro ultrasound transducers
abstract	Abstract Thickness mode piezoelectric micro-electromechanical system (MEMS) ultrasound transducers, operating in the 50–75 MHz range, have been fabricated using a composite sol gel technique in combination with wet etching. The composite sol gel technique involves producing a PZT powder/sol composite slurry, which when spun down yields films a few micrometers thick. Repeated layering, and infiltration, has been used to produce PZT films between 20 and 40 μm thick. Due to the low firing temperature (<720°C) it has also been possible to integrate these PZT films with a micro-machined silicon support wafer. These PZT thick films have been structured using a wet etching technique to create free standing pillars that have been shown to resonate in thickness mode in the frequency range of 50–75 MHz. Examples of these structures and their resonant behaviour are presented.
abstractGer	Abstract Thickness mode piezoelectric micro-electromechanical system (MEMS) ultrasound transducers, operating in the 50–75 MHz range, have been fabricated using a composite sol gel technique in combination with wet etching. The composite sol gel technique involves producing a PZT powder/sol composite slurry, which when spun down yields films a few micrometers thick. Repeated layering, and infiltration, has been used to produce PZT films between 20 and 40 μm thick. Due to the low firing temperature (<720°C) it has also been possible to integrate these PZT films with a micro-machined silicon support wafer. These PZT thick films have been structured using a wet etching technique to create free standing pillars that have been shown to resonate in thickness mode in the frequency range of 50–75 MHz. Examples of these structures and their resonant behaviour are presented.
abstract_unstemmed	Abstract Thickness mode piezoelectric micro-electromechanical system (MEMS) ultrasound transducers, operating in the 50–75 MHz range, have been fabricated using a composite sol gel technique in combination with wet etching. The composite sol gel technique involves producing a PZT powder/sol composite slurry, which when spun down yields films a few micrometers thick. Repeated layering, and infiltration, has been used to produce PZT films between 20 and 40 μm thick. Due to the low firing temperature (<720°C) it has also been possible to integrate these PZT films with a micro-machined silicon support wafer. These PZT thick films have been structured using a wet etching technique to create free standing pillars that have been shown to resonate in thickness mode in the frequency range of 50–75 MHz. Examples of these structures and their resonant behaviour are presented.
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title_short	Thickness mode high frequency MEMS piezoelectric micro ultrasound transducers
url	https://dx.doi.org/10.1007/s10832-007-9317-x
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up_date	2024-07-03T21:46:07.902Z
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fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR013728555</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220111003606.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201006s2007 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10832-007-9317-x</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR013728555</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s10832-007-9317-x-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.09</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Dauchy, F.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Thickness mode high frequency MEMS piezoelectric micro ultrasound transducers</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2007</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Thickness mode piezoelectric micro-electromechanical system (MEMS) ultrasound transducers, operating in the 50–75 MHz range, have been fabricated using a composite sol gel technique in combination with wet etching. The composite sol gel technique involves producing a PZT powder/sol composite slurry, which when spun down yields films a few micrometers thick. Repeated layering, and infiltration, has been used to produce PZT films between 20 and 40 μm thick. Due to the low firing temperature (<720°C) it has also been possible to integrate these PZT films with a micro-machined silicon support wafer. These PZT thick films have been structured using a wet etching technique to create free standing pillars that have been shown to resonate in thickness mode in the frequency range of 50–75 MHz. 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Thickness mode high frequency MEMS piezoelectric micro ultrasound transducers

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