Modelling of multilayer films using spectroscopic ellipsometry
Abstract A systematic investigation of the ellipsometric parameters of MBE-grown heterostructures of $ ln_{x} %$ Ga_{1−x} $As on GaAs substrate has been completed. The index of refraction n, and extinction coefficient, k, values of the above heterostructure in the wavelength range 500–800 nm, are pr...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Chattopadhyay, K. [verfasserIn] Aubel, J. [verfasserIn] Sundaram, S. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
1995 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966, 30(1995), 16 vom: Aug., Seite 4014-4018 |
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| Übergeordnetes Werk: |
volume:30 ; year:1995 ; number:16 ; month:08 ; pages:4014-4018 |
| Links: |
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| DOI / URN: |
10.1007/BF00360702 |
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| Katalog-ID: |
SPR013783718 |
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| 245 | 1 | 0 | |a Modelling of multilayer films using spectroscopic ellipsometry |
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| 520 | |a Abstract A systematic investigation of the ellipsometric parameters of MBE-grown heterostructures of $ ln_{x} %$ Ga_{1−x} $As on GaAs substrate has been completed. The index of refraction n, and extinction coefficient, k, values of the above heterostructure in the wavelength range 500–800 nm, are presented, a region of interest in many applications. A model has been proposed for the multilayered structures, through which the thickness of the oxide layer can be determined and the observed optical characteristics of these heterostructures explained. The validity of the model was established by the excellent agreement between the measured and calculated values of the ellipsometric parameters ψ and Δ. | ||
| 650 | 4 | |a Oxide |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Polymer |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a GaAs |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Refraction |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Oxide Layer |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Aubel, J. |e verfasserin |4 aut | |
| 700 | 1 | |a Sundaram, S. |e verfasserin |4 aut | |
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10.1007/BF00360702 doi (DE-627)SPR013783718 (SPR)BF00360702-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Chattopadhyay, K. verfasserin aut Modelling of multilayer films using spectroscopic ellipsometry 1995 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A systematic investigation of the ellipsometric parameters of MBE-grown heterostructures of $ ln_{x} %$ Ga_{1−x} $As on GaAs substrate has been completed. The index of refraction n, and extinction coefficient, k, values of the above heterostructure in the wavelength range 500–800 nm, are presented, a region of interest in many applications. A model has been proposed for the multilayered structures, through which the thickness of the oxide layer can be determined and the observed optical characteristics of these heterostructures explained. The validity of the model was established by the excellent agreement between the measured and calculated values of the ellipsometric parameters ψ and Δ. Oxide (dpeaa)DE-He213 Polymer (dpeaa)DE-He213 GaAs (dpeaa)DE-He213 Refraction (dpeaa)DE-He213 Oxide Layer (dpeaa)DE-He213 Aubel, J. verfasserin aut Sundaram, S. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 30(1995), 16 vom: Aug., Seite 4014-4018 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:30 year:1995 number:16 month:08 pages:4014-4018 https://dx.doi.org/10.1007/BF00360702 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_224 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2043 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2158 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2193 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2808 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 51.00 ASE AR 30 1995 16 08 4014-4018 |
| spelling |
10.1007/BF00360702 doi (DE-627)SPR013783718 (SPR)BF00360702-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Chattopadhyay, K. verfasserin aut Modelling of multilayer films using spectroscopic ellipsometry 1995 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A systematic investigation of the ellipsometric parameters of MBE-grown heterostructures of $ ln_{x} %$ Ga_{1−x} $As on GaAs substrate has been completed. The index of refraction n, and extinction coefficient, k, values of the above heterostructure in the wavelength range 500–800 nm, are presented, a region of interest in many applications. A model has been proposed for the multilayered structures, through which the thickness of the oxide layer can be determined and the observed optical characteristics of these heterostructures explained. The validity of the model was established by the excellent agreement between the measured and calculated values of the ellipsometric parameters ψ and Δ. Oxide (dpeaa)DE-He213 Polymer (dpeaa)DE-He213 GaAs (dpeaa)DE-He213 Refraction (dpeaa)DE-He213 Oxide Layer (dpeaa)DE-He213 Aubel, J. verfasserin aut Sundaram, S. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 30(1995), 16 vom: Aug., Seite 4014-4018 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:30 year:1995 number:16 month:08 pages:4014-4018 https://dx.doi.org/10.1007/BF00360702 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_224 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2043 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2158 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2193 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2808 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 51.00 ASE AR 30 1995 16 08 4014-4018 |
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10.1007/BF00360702 doi (DE-627)SPR013783718 (SPR)BF00360702-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Chattopadhyay, K. verfasserin aut Modelling of multilayer films using spectroscopic ellipsometry 1995 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A systematic investigation of the ellipsometric parameters of MBE-grown heterostructures of $ ln_{x} %$ Ga_{1−x} $As on GaAs substrate has been completed. The index of refraction n, and extinction coefficient, k, values of the above heterostructure in the wavelength range 500–800 nm, are presented, a region of interest in many applications. A model has been proposed for the multilayered structures, through which the thickness of the oxide layer can be determined and the observed optical characteristics of these heterostructures explained. The validity of the model was established by the excellent agreement between the measured and calculated values of the ellipsometric parameters ψ and Δ. Oxide (dpeaa)DE-He213 Polymer (dpeaa)DE-He213 GaAs (dpeaa)DE-He213 Refraction (dpeaa)DE-He213 Oxide Layer (dpeaa)DE-He213 Aubel, J. verfasserin aut Sundaram, S. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 30(1995), 16 vom: Aug., Seite 4014-4018 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:30 year:1995 number:16 month:08 pages:4014-4018 https://dx.doi.org/10.1007/BF00360702 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_224 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2043 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2158 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2193 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2808 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 51.00 ASE AR 30 1995 16 08 4014-4018 |
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10.1007/BF00360702 doi (DE-627)SPR013783718 (SPR)BF00360702-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Chattopadhyay, K. verfasserin aut Modelling of multilayer films using spectroscopic ellipsometry 1995 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A systematic investigation of the ellipsometric parameters of MBE-grown heterostructures of $ ln_{x} %$ Ga_{1−x} $As on GaAs substrate has been completed. The index of refraction n, and extinction coefficient, k, values of the above heterostructure in the wavelength range 500–800 nm, are presented, a region of interest in many applications. A model has been proposed for the multilayered structures, through which the thickness of the oxide layer can be determined and the observed optical characteristics of these heterostructures explained. The validity of the model was established by the excellent agreement between the measured and calculated values of the ellipsometric parameters ψ and Δ. Oxide (dpeaa)DE-He213 Polymer (dpeaa)DE-He213 GaAs (dpeaa)DE-He213 Refraction (dpeaa)DE-He213 Oxide Layer (dpeaa)DE-He213 Aubel, J. verfasserin aut Sundaram, S. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 30(1995), 16 vom: Aug., Seite 4014-4018 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:30 year:1995 number:16 month:08 pages:4014-4018 https://dx.doi.org/10.1007/BF00360702 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_224 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2043 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2158 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2193 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2808 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 51.00 ASE AR 30 1995 16 08 4014-4018 |
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10.1007/BF00360702 doi (DE-627)SPR013783718 (SPR)BF00360702-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Chattopadhyay, K. verfasserin aut Modelling of multilayer films using spectroscopic ellipsometry 1995 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A systematic investigation of the ellipsometric parameters of MBE-grown heterostructures of $ ln_{x} %$ Ga_{1−x} $As on GaAs substrate has been completed. The index of refraction n, and extinction coefficient, k, values of the above heterostructure in the wavelength range 500–800 nm, are presented, a region of interest in many applications. A model has been proposed for the multilayered structures, through which the thickness of the oxide layer can be determined and the observed optical characteristics of these heterostructures explained. The validity of the model was established by the excellent agreement between the measured and calculated values of the ellipsometric parameters ψ and Δ. Oxide (dpeaa)DE-He213 Polymer (dpeaa)DE-He213 GaAs (dpeaa)DE-He213 Refraction (dpeaa)DE-He213 Oxide Layer (dpeaa)DE-He213 Aubel, J. verfasserin aut Sundaram, S. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 30(1995), 16 vom: Aug., Seite 4014-4018 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:30 year:1995 number:16 month:08 pages:4014-4018 https://dx.doi.org/10.1007/BF00360702 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_224 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2043 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2158 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2193 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2808 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 51.00 ASE AR 30 1995 16 08 4014-4018 |
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Enthalten in Journal of materials science 30(1995), 16 vom: Aug., Seite 4014-4018 volume:30 year:1995 number:16 month:08 pages:4014-4018 |
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Enthalten in Journal of materials science 30(1995), 16 vom: Aug., Seite 4014-4018 volume:30 year:1995 number:16 month:08 pages:4014-4018 |
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Oxide Polymer GaAs Refraction Oxide Layer |
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Journal of materials science |
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Chattopadhyay, K. @@aut@@ Aubel, J. @@aut@@ Sundaram, S. @@aut@@ |
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1995-08-01T00:00:00Z |
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| author |
Chattopadhyay, K. |
| spellingShingle |
Chattopadhyay, K. ddc 670 bkl 51.00 misc Oxide misc Polymer misc GaAs misc Refraction misc Oxide Layer Modelling of multilayer films using spectroscopic ellipsometry |
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Chattopadhyay, K. |
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aut aut aut |
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Not Illustrated |
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1573-4803 |
| topic_title |
670 ASE 51.00 bkl Modelling of multilayer films using spectroscopic ellipsometry Oxide (dpeaa)DE-He213 Polymer (dpeaa)DE-He213 GaAs (dpeaa)DE-He213 Refraction (dpeaa)DE-He213 Oxide Layer (dpeaa)DE-He213 |
| topic |
ddc 670 bkl 51.00 misc Oxide misc Polymer misc GaAs misc Refraction misc Oxide Layer |
| topic_unstemmed |
ddc 670 bkl 51.00 misc Oxide misc Polymer misc GaAs misc Refraction misc Oxide Layer |
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ddc 670 bkl 51.00 misc Oxide misc Polymer misc GaAs misc Refraction misc Oxide Layer |
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Elektronische Aufsätze Aufsätze Elektronische Ressource |
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Journal of materials science |
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670 - Manufacturing |
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Journal of materials science |
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Modelling of multilayer films using spectroscopic ellipsometry |
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| title_full |
Modelling of multilayer films using spectroscopic ellipsometry |
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Chattopadhyay, K. |
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Journal of materials science |
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Journal of materials science |
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eng |
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600 - Technology |
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1995 |
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4014 |
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Chattopadhyay, K. Aubel, J. Sundaram, S. |
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670 ASE 51.00 bkl |
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Elektronische Aufsätze |
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Chattopadhyay, K. |
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10.1007/BF00360702 |
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670 |
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verfasserin |
| title_sort |
modelling of multilayer films using spectroscopic ellipsometry |
| title_auth |
Modelling of multilayer films using spectroscopic ellipsometry |
| abstract |
Abstract A systematic investigation of the ellipsometric parameters of MBE-grown heterostructures of $ ln_{x} %$ Ga_{1−x} $As on GaAs substrate has been completed. The index of refraction n, and extinction coefficient, k, values of the above heterostructure in the wavelength range 500–800 nm, are presented, a region of interest in many applications. A model has been proposed for the multilayered structures, through which the thickness of the oxide layer can be determined and the observed optical characteristics of these heterostructures explained. The validity of the model was established by the excellent agreement between the measured and calculated values of the ellipsometric parameters ψ and Δ. |
| abstractGer |
Abstract A systematic investigation of the ellipsometric parameters of MBE-grown heterostructures of $ ln_{x} %$ Ga_{1−x} $As on GaAs substrate has been completed. The index of refraction n, and extinction coefficient, k, values of the above heterostructure in the wavelength range 500–800 nm, are presented, a region of interest in many applications. A model has been proposed for the multilayered structures, through which the thickness of the oxide layer can be determined and the observed optical characteristics of these heterostructures explained. The validity of the model was established by the excellent agreement between the measured and calculated values of the ellipsometric parameters ψ and Δ. |
| abstract_unstemmed |
Abstract A systematic investigation of the ellipsometric parameters of MBE-grown heterostructures of $ ln_{x} %$ Ga_{1−x} $As on GaAs substrate has been completed. The index of refraction n, and extinction coefficient, k, values of the above heterostructure in the wavelength range 500–800 nm, are presented, a region of interest in many applications. A model has been proposed for the multilayered structures, through which the thickness of the oxide layer can be determined and the observed optical characteristics of these heterostructures explained. The validity of the model was established by the excellent agreement between the measured and calculated values of the ellipsometric parameters ψ and Δ. |
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Modelling of multilayer films using spectroscopic ellipsometry |
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Aubel, J. Sundaram, S. |
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10.1007/BF00360702 |
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2024-07-03T22:08:03.807Z |
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| score |
7.400817 |