A systematic study on the growth of PZNT films by LPE method

Abstract Liquid phase epitaxy (LPE) was used to grow (1−x)Pb($ Zn_{1/3} %$ Nb_{2/3} $)$ O_{3} $−x$ PbTiO_{3} $ (PZNT) films on different substrates. The morphology and epitaxial relationship of PZNT films with these substrates were investigated by optical microscopy and XRD. It was found that PZNT g...
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Autor*in:	Zeng, Xinhua [verfasserIn] Qin, Fen [verfasserIn] Yao, Xin [verfasserIn] Xu, Nanhua [verfasserIn] Xu, Shi [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2006

Schlagwörter:	Perovskite Lattice Mismatch Liquid Phase Epitaxy Pyrochlore Phase Epitaxial Relationship

Übergeordnetes Werk:	Enthalten in: Journal of materials science - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966, 41(2006), 13 vom: 01. Juli, Seite 4267-4272
Übergeordnetes Werk:	volume:41 ; year:2006 ; number:13 ; day:01 ; month:07 ; pages:4267-4272

Links:	Volltext

DOI / URN:	10.1007/s10853-005-5473-z

Katalog-ID:	SPR013806440

Internformat


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245	1	2	\|a A systematic study on the growth of PZNT films by LPE method
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520			\|a Abstract Liquid phase epitaxy (LPE) was used to grow (1−x)Pb($ Zn_{1/3} %$ Nb_{2/3} $)$ O_{3} $−x$ PbTiO_{3} $ (PZNT) films on different substrates. The morphology and epitaxial relationship of PZNT films with these substrates were investigated by optical microscopy and XRD. It was found that PZNT grains on planes of (001) MgO, (001) $ LaAlO_{3} $ (LAO) and two specific planes of $ SrTiO_{3} $ (STO), i.e. (110) or (111), distribute randomly and show no evident epitaxial relationship with these substrates. However PZNT films on (001) STO substrates exhibit very encouraging in-plane epitaxial relation: [100](001)PZNT // [100](001)STO, which was observed directly by OM, SEM and further confirmed by X-ray diffraction.
650		4	\|a Perovskite \|7 (dpeaa)DE-He213
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650		4	\|a Liquid Phase Epitaxy \|7 (dpeaa)DE-He213
650		4	\|a Pyrochlore Phase \|7 (dpeaa)DE-He213
650		4	\|a Epitaxial Relationship \|7 (dpeaa)DE-He213
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700	1		\|a Xu, Shi \|e verfasserin \|4 aut
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912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_206
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_250
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2031
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2039
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2056
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2070
912			\|a GBV_ILN_2086
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2107
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
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matchkey_str	article:15734803:2006----::sseaisuynhgotopnfl
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allfields	10.1007/s10853-005-5473-z doi (DE-627)SPR013806440 (SPR)s10853-005-5473-z-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Zeng, Xinhua verfasserin aut A systematic study on the growth of PZNT films by LPE method 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Liquid phase epitaxy (LPE) was used to grow (1−x)Pb($ Zn_{1/3} %$ Nb_{2/3} $)$ O_{3} $−x$ PbTiO_{3} $ (PZNT) films on different substrates. The morphology and epitaxial relationship of PZNT films with these substrates were investigated by optical microscopy and XRD. It was found that PZNT grains on planes of (001) MgO, (001) $ LaAlO_{3} $ (LAO) and two specific planes of $ SrTiO_{3} $ (STO), i.e. (110) or (111), distribute randomly and show no evident epitaxial relationship with these substrates. However PZNT films on (001) STO substrates exhibit very encouraging in-plane epitaxial relation: [100](001)PZNT // [100](001)STO, which was observed directly by OM, SEM and further confirmed by X-ray diffraction. Perovskite (dpeaa)DE-He213 Lattice Mismatch (dpeaa)DE-He213 Liquid Phase Epitaxy (dpeaa)DE-He213 Pyrochlore Phase (dpeaa)DE-He213 Epitaxial Relationship (dpeaa)DE-He213 Qin, Fen verfasserin aut Yao, Xin verfasserin aut Xu, Nanhua verfasserin aut Xu, Shi verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 41(2006), 13 vom: 01. Juli, Seite 4267-4272 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:41 year:2006 number:13 day:01 month:07 pages:4267-4272 https://dx.doi.org/10.1007/s10853-005-5473-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 41 2006 13 01 07 4267-4272
spelling	10.1007/s10853-005-5473-z doi (DE-627)SPR013806440 (SPR)s10853-005-5473-z-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Zeng, Xinhua verfasserin aut A systematic study on the growth of PZNT films by LPE method 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Liquid phase epitaxy (LPE) was used to grow (1−x)Pb($ Zn_{1/3} %$ Nb_{2/3} $)$ O_{3} $−x$ PbTiO_{3} $ (PZNT) films on different substrates. The morphology and epitaxial relationship of PZNT films with these substrates were investigated by optical microscopy and XRD. It was found that PZNT grains on planes of (001) MgO, (001) $ LaAlO_{3} $ (LAO) and two specific planes of $ SrTiO_{3} $ (STO), i.e. (110) or (111), distribute randomly and show no evident epitaxial relationship with these substrates. However PZNT films on (001) STO substrates exhibit very encouraging in-plane epitaxial relation: [100](001)PZNT // [100](001)STO, which was observed directly by OM, SEM and further confirmed by X-ray diffraction. Perovskite (dpeaa)DE-He213 Lattice Mismatch (dpeaa)DE-He213 Liquid Phase Epitaxy (dpeaa)DE-He213 Pyrochlore Phase (dpeaa)DE-He213 Epitaxial Relationship (dpeaa)DE-He213 Qin, Fen verfasserin aut Yao, Xin verfasserin aut Xu, Nanhua verfasserin aut Xu, Shi verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 41(2006), 13 vom: 01. Juli, Seite 4267-4272 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:41 year:2006 number:13 day:01 month:07 pages:4267-4272 https://dx.doi.org/10.1007/s10853-005-5473-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 41 2006 13 01 07 4267-4272
allfields_unstemmed	10.1007/s10853-005-5473-z doi (DE-627)SPR013806440 (SPR)s10853-005-5473-z-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Zeng, Xinhua verfasserin aut A systematic study on the growth of PZNT films by LPE method 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Liquid phase epitaxy (LPE) was used to grow (1−x)Pb($ Zn_{1/3} %$ Nb_{2/3} $)$ O_{3} $−x$ PbTiO_{3} $ (PZNT) films on different substrates. The morphology and epitaxial relationship of PZNT films with these substrates were investigated by optical microscopy and XRD. It was found that PZNT grains on planes of (001) MgO, (001) $ LaAlO_{3} $ (LAO) and two specific planes of $ SrTiO_{3} $ (STO), i.e. (110) or (111), distribute randomly and show no evident epitaxial relationship with these substrates. However PZNT films on (001) STO substrates exhibit very encouraging in-plane epitaxial relation: [100](001)PZNT // [100](001)STO, which was observed directly by OM, SEM and further confirmed by X-ray diffraction. Perovskite (dpeaa)DE-He213 Lattice Mismatch (dpeaa)DE-He213 Liquid Phase Epitaxy (dpeaa)DE-He213 Pyrochlore Phase (dpeaa)DE-He213 Epitaxial Relationship (dpeaa)DE-He213 Qin, Fen verfasserin aut Yao, Xin verfasserin aut Xu, Nanhua verfasserin aut Xu, Shi verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 41(2006), 13 vom: 01. Juli, Seite 4267-4272 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:41 year:2006 number:13 day:01 month:07 pages:4267-4272 https://dx.doi.org/10.1007/s10853-005-5473-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 41 2006 13 01 07 4267-4272
allfieldsGer	10.1007/s10853-005-5473-z doi (DE-627)SPR013806440 (SPR)s10853-005-5473-z-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Zeng, Xinhua verfasserin aut A systematic study on the growth of PZNT films by LPE method 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Liquid phase epitaxy (LPE) was used to grow (1−x)Pb($ Zn_{1/3} %$ Nb_{2/3} $)$ O_{3} $−x$ PbTiO_{3} $ (PZNT) films on different substrates. The morphology and epitaxial relationship of PZNT films with these substrates were investigated by optical microscopy and XRD. It was found that PZNT grains on planes of (001) MgO, (001) $ LaAlO_{3} $ (LAO) and two specific planes of $ SrTiO_{3} $ (STO), i.e. (110) or (111), distribute randomly and show no evident epitaxial relationship with these substrates. However PZNT films on (001) STO substrates exhibit very encouraging in-plane epitaxial relation: [100](001)PZNT // [100](001)STO, which was observed directly by OM, SEM and further confirmed by X-ray diffraction. Perovskite (dpeaa)DE-He213 Lattice Mismatch (dpeaa)DE-He213 Liquid Phase Epitaxy (dpeaa)DE-He213 Pyrochlore Phase (dpeaa)DE-He213 Epitaxial Relationship (dpeaa)DE-He213 Qin, Fen verfasserin aut Yao, Xin verfasserin aut Xu, Nanhua verfasserin aut Xu, Shi verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 41(2006), 13 vom: 01. Juli, Seite 4267-4272 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:41 year:2006 number:13 day:01 month:07 pages:4267-4272 https://dx.doi.org/10.1007/s10853-005-5473-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 41 2006 13 01 07 4267-4272
allfieldsSound	10.1007/s10853-005-5473-z doi (DE-627)SPR013806440 (SPR)s10853-005-5473-z-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Zeng, Xinhua verfasserin aut A systematic study on the growth of PZNT films by LPE method 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Liquid phase epitaxy (LPE) was used to grow (1−x)Pb($ Zn_{1/3} %$ Nb_{2/3} $)$ O_{3} $−x$ PbTiO_{3} $ (PZNT) films on different substrates. The morphology and epitaxial relationship of PZNT films with these substrates were investigated by optical microscopy and XRD. It was found that PZNT grains on planes of (001) MgO, (001) $ LaAlO_{3} $ (LAO) and two specific planes of $ SrTiO_{3} $ (STO), i.e. (110) or (111), distribute randomly and show no evident epitaxial relationship with these substrates. However PZNT films on (001) STO substrates exhibit very encouraging in-plane epitaxial relation: [100](001)PZNT // [100](001)STO, which was observed directly by OM, SEM and further confirmed by X-ray diffraction. Perovskite (dpeaa)DE-He213 Lattice Mismatch (dpeaa)DE-He213 Liquid Phase Epitaxy (dpeaa)DE-He213 Pyrochlore Phase (dpeaa)DE-He213 Epitaxial Relationship (dpeaa)DE-He213 Qin, Fen verfasserin aut Yao, Xin verfasserin aut Xu, Nanhua verfasserin aut Xu, Shi verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 41(2006), 13 vom: 01. Juli, Seite 4267-4272 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:41 year:2006 number:13 day:01 month:07 pages:4267-4272 https://dx.doi.org/10.1007/s10853-005-5473-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 41 2006 13 01 07 4267-4272
language	English
source	Enthalten in Journal of materials science 41(2006), 13 vom: 01. Juli, Seite 4267-4272 volume:41 year:2006 number:13 day:01 month:07 pages:4267-4272
sourceStr	Enthalten in Journal of materials science 41(2006), 13 vom: 01. Juli, Seite 4267-4272 volume:41 year:2006 number:13 day:01 month:07 pages:4267-4272
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Perovskite Lattice Mismatch Liquid Phase Epitaxy Pyrochlore Phase Epitaxial Relationship
dewey-raw	670
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container_title	Journal of materials science
authorswithroles_txt_mv	Zeng, Xinhua @@aut@@ Qin, Fen @@aut@@ Yao, Xin @@aut@@ Xu, Nanhua @@aut@@ Xu, Shi @@aut@@
publishDateDaySort_date	2006-07-01T00:00:00Z
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author	Zeng, Xinhua
spellingShingle	Zeng, Xinhua ddc 670 bkl 51.00 misc Perovskite misc Lattice Mismatch misc Liquid Phase Epitaxy misc Pyrochlore Phase misc Epitaxial Relationship A systematic study on the growth of PZNT films by LPE method
authorStr	Zeng, Xinhua
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topic_title	670 ASE 51.00 bkl A systematic study on the growth of PZNT films by LPE method Perovskite (dpeaa)DE-He213 Lattice Mismatch (dpeaa)DE-He213 Liquid Phase Epitaxy (dpeaa)DE-He213 Pyrochlore Phase (dpeaa)DE-He213 Epitaxial Relationship (dpeaa)DE-He213
topic	ddc 670 bkl 51.00 misc Perovskite misc Lattice Mismatch misc Liquid Phase Epitaxy misc Pyrochlore Phase misc Epitaxial Relationship
topic_unstemmed	ddc 670 bkl 51.00 misc Perovskite misc Lattice Mismatch misc Liquid Phase Epitaxy misc Pyrochlore Phase misc Epitaxial Relationship
topic_browse	ddc 670 bkl 51.00 misc Perovskite misc Lattice Mismatch misc Liquid Phase Epitaxy misc Pyrochlore Phase misc Epitaxial Relationship
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title_full	A systematic study on the growth of PZNT films by LPE method
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title_sort	systematic study on the growth of pznt films by lpe method
title_auth	A systematic study on the growth of PZNT films by LPE method
abstract	Abstract Liquid phase epitaxy (LPE) was used to grow (1−x)Pb($ Zn_{1/3} %$ Nb_{2/3} $)$ O_{3} $−x$ PbTiO_{3} $ (PZNT) films on different substrates. The morphology and epitaxial relationship of PZNT films with these substrates were investigated by optical microscopy and XRD. It was found that PZNT grains on planes of (001) MgO, (001) $ LaAlO_{3} $ (LAO) and two specific planes of $ SrTiO_{3} $ (STO), i.e. (110) or (111), distribute randomly and show no evident epitaxial relationship with these substrates. However PZNT films on (001) STO substrates exhibit very encouraging in-plane epitaxial relation: [100](001)PZNT // [100](001)STO, which was observed directly by OM, SEM and further confirmed by X-ray diffraction.
abstractGer	Abstract Liquid phase epitaxy (LPE) was used to grow (1−x)Pb($ Zn_{1/3} %$ Nb_{2/3} $)$ O_{3} $−x$ PbTiO_{3} $ (PZNT) films on different substrates. The morphology and epitaxial relationship of PZNT films with these substrates were investigated by optical microscopy and XRD. It was found that PZNT grains on planes of (001) MgO, (001) $ LaAlO_{3} $ (LAO) and two specific planes of $ SrTiO_{3} $ (STO), i.e. (110) or (111), distribute randomly and show no evident epitaxial relationship with these substrates. However PZNT films on (001) STO substrates exhibit very encouraging in-plane epitaxial relation: [100](001)PZNT // [100](001)STO, which was observed directly by OM, SEM and further confirmed by X-ray diffraction.
abstract_unstemmed	Abstract Liquid phase epitaxy (LPE) was used to grow (1−x)Pb($ Zn_{1/3} %$ Nb_{2/3} $)$ O_{3} $−x$ PbTiO_{3} $ (PZNT) films on different substrates. The morphology and epitaxial relationship of PZNT films with these substrates were investigated by optical microscopy and XRD. It was found that PZNT grains on planes of (001) MgO, (001) $ LaAlO_{3} $ (LAO) and two specific planes of $ SrTiO_{3} $ (STO), i.e. (110) or (111), distribute randomly and show no evident epitaxial relationship with these substrates. However PZNT films on (001) STO substrates exhibit very encouraging in-plane epitaxial relation: [100](001)PZNT // [100](001)STO, which was observed directly by OM, SEM and further confirmed by X-ray diffraction.
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container_issue	13
title_short	A systematic study on the growth of PZNT films by LPE method
url	https://dx.doi.org/10.1007/s10853-005-5473-z
remote_bool	true
author2	Qin, Fen Yao, Xin Xu, Nanhua Xu, Shi
author2Str	Qin, Fen Yao, Xin Xu, Nanhua Xu, Shi
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doi_str	10.1007/s10853-005-5473-z
up_date	2024-07-03T22:16:32.447Z
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A systematic study on the growth of PZNT films by LPE method

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