Characterization of nanosized $ TiO_{2} $ based $ H_{2} $S gas sensor
Abstract The present investigation deals with the fabrication of $ H_{2} $S gas sensor based on semiconducting oxide,$ TiO_{2} $. Among the various metal oxide additives tested, $ Al_{2} %$ O_{3} $ is outstanding in promoting the sensing properties of nanosized $ TiO_{2} $ based $ H_{2} $S gas senso...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Chaudhari, G. N. [verfasserIn] Bambole, D. R. [verfasserIn] Bodade, A. B. [verfasserIn] Padole, P. R. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2006 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966, 41(2006), 15 vom: 01. Aug., Seite 4860-4864 |
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| Übergeordnetes Werk: |
volume:41 ; year:2006 ; number:15 ; day:01 ; month:08 ; pages:4860-4864 |
| Links: |
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| DOI / URN: |
10.1007/s10853-006-0042-7 |
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| Katalog-ID: |
SPR013807951 |
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| 245 | 1 | 0 | |a Characterization of nanosized $ TiO_{2} $ based $ H_{2} $S gas sensor |
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| 520 | |a Abstract The present investigation deals with the fabrication of $ H_{2} $S gas sensor based on semiconducting oxide,$ TiO_{2} $. Among the various metal oxide additives tested, $ Al_{2} %$ O_{3} $ is outstanding in promoting the sensing properties of nanosized $ TiO_{2} $ based $ H_{2} $S gas sensor. XRD pattern of $ TiO_{2} $ /$ Al_{2} %$ O_{3} $ shows complete phase formation with anatase structure and grain growth 45 nm. The $ TiO_{2} $ sensor loaded with 5 wt% $ Al_{2} %$ O_{3} $ and 0.5 wt% Pd shows increase in sensitivity to $ H_{2} $S. The cross sensitivity of 0.5 wt% Pd:5 wt% $ Al_{2} %$ O_{3} $ doped $ TiO_{2} $ also checked for CO, LPG and $ H_{2} $ gases. The highest sensitivity for low concentration of $ H_{2} $S was observed using $ TiO_{2} $ based mixed $ Al_{2} %$ O_{3} $ and Pd. The $ H_{2} $S sensor shows high sensitivity and undesirable cross sensitivity effect using $ TiO_{2} $/$ Al_{2} %$ O_{3} $/Pd as sensing materials. | ||
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| 650 | 4 | |a Undoped TiO2 |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Bambole, D. R. |e verfasserin |4 aut | |
| 700 | 1 | |a Bodade, A. B. |e verfasserin |4 aut | |
| 700 | 1 | |a Padole, P. R. |e verfasserin |4 aut | |
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10.1007/s10853-006-0042-7 doi (DE-627)SPR013807951 (SPR)s10853-006-0042-7-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Chaudhari, G. N. verfasserin aut Characterization of nanosized $ TiO_{2} $ based $ H_{2} $S gas sensor 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The present investigation deals with the fabrication of $ H_{2} $S gas sensor based on semiconducting oxide,$ TiO_{2} $. Among the various metal oxide additives tested, $ Al_{2} %$ O_{3} $ is outstanding in promoting the sensing properties of nanosized $ TiO_{2} $ based $ H_{2} $S gas sensor. XRD pattern of $ TiO_{2} $ /$ Al_{2} %$ O_{3} $ shows complete phase formation with anatase structure and grain growth 45 nm. The $ TiO_{2} $ sensor loaded with 5 wt% $ Al_{2} %$ O_{3} $ and 0.5 wt% Pd shows increase in sensitivity to $ H_{2} $S. The cross sensitivity of 0.5 wt% Pd:5 wt% $ Al_{2} %$ O_{3} $ doped $ TiO_{2} $ also checked for CO, LPG and $ H_{2} $ gases. The highest sensitivity for low concentration of $ H_{2} $S was observed using $ TiO_{2} $ based mixed $ Al_{2} %$ O_{3} $ and Pd. The $ H_{2} $S sensor shows high sensitivity and undesirable cross sensitivity effect using $ TiO_{2} $/$ Al_{2} %$ O_{3} $/Pd as sensing materials. TiO2 (dpeaa)DE-He213 Al2O3 (dpeaa)DE-He213 CeO2 (dpeaa)DE-He213 Sensor Surface (dpeaa)DE-He213 Undoped TiO2 (dpeaa)DE-He213 Bambole, D. R. verfasserin aut Bodade, A. B. verfasserin aut Padole, P. R. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 41(2006), 15 vom: 01. Aug., Seite 4860-4864 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:41 year:2006 number:15 day:01 month:08 pages:4860-4864 https://dx.doi.org/10.1007/s10853-006-0042-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 41 2006 15 01 08 4860-4864 |
| spelling |
10.1007/s10853-006-0042-7 doi (DE-627)SPR013807951 (SPR)s10853-006-0042-7-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Chaudhari, G. N. verfasserin aut Characterization of nanosized $ TiO_{2} $ based $ H_{2} $S gas sensor 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The present investigation deals with the fabrication of $ H_{2} $S gas sensor based on semiconducting oxide,$ TiO_{2} $. Among the various metal oxide additives tested, $ Al_{2} %$ O_{3} $ is outstanding in promoting the sensing properties of nanosized $ TiO_{2} $ based $ H_{2} $S gas sensor. XRD pattern of $ TiO_{2} $ /$ Al_{2} %$ O_{3} $ shows complete phase formation with anatase structure and grain growth 45 nm. The $ TiO_{2} $ sensor loaded with 5 wt% $ Al_{2} %$ O_{3} $ and 0.5 wt% Pd shows increase in sensitivity to $ H_{2} $S. The cross sensitivity of 0.5 wt% Pd:5 wt% $ Al_{2} %$ O_{3} $ doped $ TiO_{2} $ also checked for CO, LPG and $ H_{2} $ gases. The highest sensitivity for low concentration of $ H_{2} $S was observed using $ TiO_{2} $ based mixed $ Al_{2} %$ O_{3} $ and Pd. The $ H_{2} $S sensor shows high sensitivity and undesirable cross sensitivity effect using $ TiO_{2} $/$ Al_{2} %$ O_{3} $/Pd as sensing materials. TiO2 (dpeaa)DE-He213 Al2O3 (dpeaa)DE-He213 CeO2 (dpeaa)DE-He213 Sensor Surface (dpeaa)DE-He213 Undoped TiO2 (dpeaa)DE-He213 Bambole, D. R. verfasserin aut Bodade, A. B. verfasserin aut Padole, P. R. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 41(2006), 15 vom: 01. Aug., Seite 4860-4864 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:41 year:2006 number:15 day:01 month:08 pages:4860-4864 https://dx.doi.org/10.1007/s10853-006-0042-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 41 2006 15 01 08 4860-4864 |
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10.1007/s10853-006-0042-7 doi (DE-627)SPR013807951 (SPR)s10853-006-0042-7-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Chaudhari, G. N. verfasserin aut Characterization of nanosized $ TiO_{2} $ based $ H_{2} $S gas sensor 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The present investigation deals with the fabrication of $ H_{2} $S gas sensor based on semiconducting oxide,$ TiO_{2} $. Among the various metal oxide additives tested, $ Al_{2} %$ O_{3} $ is outstanding in promoting the sensing properties of nanosized $ TiO_{2} $ based $ H_{2} $S gas sensor. XRD pattern of $ TiO_{2} $ /$ Al_{2} %$ O_{3} $ shows complete phase formation with anatase structure and grain growth 45 nm. The $ TiO_{2} $ sensor loaded with 5 wt% $ Al_{2} %$ O_{3} $ and 0.5 wt% Pd shows increase in sensitivity to $ H_{2} $S. The cross sensitivity of 0.5 wt% Pd:5 wt% $ Al_{2} %$ O_{3} $ doped $ TiO_{2} $ also checked for CO, LPG and $ H_{2} $ gases. The highest sensitivity for low concentration of $ H_{2} $S was observed using $ TiO_{2} $ based mixed $ Al_{2} %$ O_{3} $ and Pd. The $ H_{2} $S sensor shows high sensitivity and undesirable cross sensitivity effect using $ TiO_{2} $/$ Al_{2} %$ O_{3} $/Pd as sensing materials. TiO2 (dpeaa)DE-He213 Al2O3 (dpeaa)DE-He213 CeO2 (dpeaa)DE-He213 Sensor Surface (dpeaa)DE-He213 Undoped TiO2 (dpeaa)DE-He213 Bambole, D. R. verfasserin aut Bodade, A. B. verfasserin aut Padole, P. R. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 41(2006), 15 vom: 01. Aug., Seite 4860-4864 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:41 year:2006 number:15 day:01 month:08 pages:4860-4864 https://dx.doi.org/10.1007/s10853-006-0042-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 41 2006 15 01 08 4860-4864 |
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10.1007/s10853-006-0042-7 doi (DE-627)SPR013807951 (SPR)s10853-006-0042-7-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Chaudhari, G. N. verfasserin aut Characterization of nanosized $ TiO_{2} $ based $ H_{2} $S gas sensor 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The present investigation deals with the fabrication of $ H_{2} $S gas sensor based on semiconducting oxide,$ TiO_{2} $. Among the various metal oxide additives tested, $ Al_{2} %$ O_{3} $ is outstanding in promoting the sensing properties of nanosized $ TiO_{2} $ based $ H_{2} $S gas sensor. XRD pattern of $ TiO_{2} $ /$ Al_{2} %$ O_{3} $ shows complete phase formation with anatase structure and grain growth 45 nm. The $ TiO_{2} $ sensor loaded with 5 wt% $ Al_{2} %$ O_{3} $ and 0.5 wt% Pd shows increase in sensitivity to $ H_{2} $S. The cross sensitivity of 0.5 wt% Pd:5 wt% $ Al_{2} %$ O_{3} $ doped $ TiO_{2} $ also checked for CO, LPG and $ H_{2} $ gases. The highest sensitivity for low concentration of $ H_{2} $S was observed using $ TiO_{2} $ based mixed $ Al_{2} %$ O_{3} $ and Pd. The $ H_{2} $S sensor shows high sensitivity and undesirable cross sensitivity effect using $ TiO_{2} $/$ Al_{2} %$ O_{3} $/Pd as sensing materials. TiO2 (dpeaa)DE-He213 Al2O3 (dpeaa)DE-He213 CeO2 (dpeaa)DE-He213 Sensor Surface (dpeaa)DE-He213 Undoped TiO2 (dpeaa)DE-He213 Bambole, D. R. verfasserin aut Bodade, A. B. verfasserin aut Padole, P. R. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 41(2006), 15 vom: 01. Aug., Seite 4860-4864 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:41 year:2006 number:15 day:01 month:08 pages:4860-4864 https://dx.doi.org/10.1007/s10853-006-0042-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 41 2006 15 01 08 4860-4864 |
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10.1007/s10853-006-0042-7 doi (DE-627)SPR013807951 (SPR)s10853-006-0042-7-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Chaudhari, G. N. verfasserin aut Characterization of nanosized $ TiO_{2} $ based $ H_{2} $S gas sensor 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The present investigation deals with the fabrication of $ H_{2} $S gas sensor based on semiconducting oxide,$ TiO_{2} $. Among the various metal oxide additives tested, $ Al_{2} %$ O_{3} $ is outstanding in promoting the sensing properties of nanosized $ TiO_{2} $ based $ H_{2} $S gas sensor. XRD pattern of $ TiO_{2} $ /$ Al_{2} %$ O_{3} $ shows complete phase formation with anatase structure and grain growth 45 nm. The $ TiO_{2} $ sensor loaded with 5 wt% $ Al_{2} %$ O_{3} $ and 0.5 wt% Pd shows increase in sensitivity to $ H_{2} $S. The cross sensitivity of 0.5 wt% Pd:5 wt% $ Al_{2} %$ O_{3} $ doped $ TiO_{2} $ also checked for CO, LPG and $ H_{2} $ gases. The highest sensitivity for low concentration of $ H_{2} $S was observed using $ TiO_{2} $ based mixed $ Al_{2} %$ O_{3} $ and Pd. The $ H_{2} $S sensor shows high sensitivity and undesirable cross sensitivity effect using $ TiO_{2} $/$ Al_{2} %$ O_{3} $/Pd as sensing materials. TiO2 (dpeaa)DE-He213 Al2O3 (dpeaa)DE-He213 CeO2 (dpeaa)DE-He213 Sensor Surface (dpeaa)DE-He213 Undoped TiO2 (dpeaa)DE-He213 Bambole, D. R. verfasserin aut Bodade, A. B. verfasserin aut Padole, P. R. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 41(2006), 15 vom: 01. Aug., Seite 4860-4864 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:41 year:2006 number:15 day:01 month:08 pages:4860-4864 https://dx.doi.org/10.1007/s10853-006-0042-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 41 2006 15 01 08 4860-4864 |
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TiO2 Al2O3 CeO2 Sensor Surface Undoped TiO2 |
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Chaudhari, G. N. @@aut@@ Bambole, D. R. @@aut@@ Bodade, A. B. @@aut@@ Padole, P. R. @@aut@@ |
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N.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Characterization of nanosized $ TiO_{2} $ based $ H_{2} $S gas sensor</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2006</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The present investigation deals with the fabrication of $ H_{2} $S gas sensor based on semiconducting oxide,$ TiO_{2} $. Among the various metal oxide additives tested, $ Al_{2} %$ O_{3} $ is outstanding in promoting the sensing properties of nanosized $ TiO_{2} $ based $ H_{2} $S gas sensor. XRD pattern of $ TiO_{2} $ /$ Al_{2} %$ O_{3} $ shows complete phase formation with anatase structure and grain growth 45 nm. The $ TiO_{2} $ sensor loaded with 5 wt% $ Al_{2} %$ O_{3} $ and 0.5 wt% Pd shows increase in sensitivity to $ H_{2} $S. The cross sensitivity of 0.5 wt% Pd:5 wt% $ Al_{2} %$ O_{3} $ doped $ TiO_{2} $ also checked for CO, LPG and $ H_{2} $ gases. The highest sensitivity for low concentration of $ H_{2} $S was observed using $ TiO_{2} $ based mixed $ Al_{2} %$ O_{3} $ and Pd. 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Chaudhari, G. N. |
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Chaudhari, G. N. ddc 670 bkl 51.00 misc TiO2 misc Al2O3 misc CeO2 misc Sensor Surface misc Undoped TiO2 Characterization of nanosized $ TiO_{2} $ based $ H_{2} $S gas sensor |
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670 ASE 51.00 bkl Characterization of nanosized $ TiO_{2} $ based $ H_{2} $S gas sensor TiO2 (dpeaa)DE-He213 Al2O3 (dpeaa)DE-He213 CeO2 (dpeaa)DE-He213 Sensor Surface (dpeaa)DE-He213 Undoped TiO2 (dpeaa)DE-He213 |
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ddc 670 bkl 51.00 misc TiO2 misc Al2O3 misc CeO2 misc Sensor Surface misc Undoped TiO2 |
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ddc 670 bkl 51.00 misc TiO2 misc Al2O3 misc CeO2 misc Sensor Surface misc Undoped TiO2 |
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Characterization of nanosized $ TiO_{2} $ based $ H_{2} $S gas sensor |
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Characterization of nanosized $ TiO_{2} $ based $ H_{2} $S gas sensor |
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Chaudhari, G. N. |
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Chaudhari, G. N. Bambole, D. R. Bodade, A. B. Padole, P. R. |
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670 ASE 51.00 bkl |
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Elektronische Aufsätze |
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Chaudhari, G. N. |
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10.1007/s10853-006-0042-7 |
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verfasserin |
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characterization of nanosized $ tio_{2} $ based $ h_{2} $s gas sensor |
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Characterization of nanosized $ TiO_{2} $ based $ H_{2} $S gas sensor |
| abstract |
Abstract The present investigation deals with the fabrication of $ H_{2} $S gas sensor based on semiconducting oxide,$ TiO_{2} $. Among the various metal oxide additives tested, $ Al_{2} %$ O_{3} $ is outstanding in promoting the sensing properties of nanosized $ TiO_{2} $ based $ H_{2} $S gas sensor. XRD pattern of $ TiO_{2} $ /$ Al_{2} %$ O_{3} $ shows complete phase formation with anatase structure and grain growth 45 nm. The $ TiO_{2} $ sensor loaded with 5 wt% $ Al_{2} %$ O_{3} $ and 0.5 wt% Pd shows increase in sensitivity to $ H_{2} $S. The cross sensitivity of 0.5 wt% Pd:5 wt% $ Al_{2} %$ O_{3} $ doped $ TiO_{2} $ also checked for CO, LPG and $ H_{2} $ gases. The highest sensitivity for low concentration of $ H_{2} $S was observed using $ TiO_{2} $ based mixed $ Al_{2} %$ O_{3} $ and Pd. The $ H_{2} $S sensor shows high sensitivity and undesirable cross sensitivity effect using $ TiO_{2} $/$ Al_{2} %$ O_{3} $/Pd as sensing materials. |
| abstractGer |
Abstract The present investigation deals with the fabrication of $ H_{2} $S gas sensor based on semiconducting oxide,$ TiO_{2} $. Among the various metal oxide additives tested, $ Al_{2} %$ O_{3} $ is outstanding in promoting the sensing properties of nanosized $ TiO_{2} $ based $ H_{2} $S gas sensor. XRD pattern of $ TiO_{2} $ /$ Al_{2} %$ O_{3} $ shows complete phase formation with anatase structure and grain growth 45 nm. The $ TiO_{2} $ sensor loaded with 5 wt% $ Al_{2} %$ O_{3} $ and 0.5 wt% Pd shows increase in sensitivity to $ H_{2} $S. The cross sensitivity of 0.5 wt% Pd:5 wt% $ Al_{2} %$ O_{3} $ doped $ TiO_{2} $ also checked for CO, LPG and $ H_{2} $ gases. The highest sensitivity for low concentration of $ H_{2} $S was observed using $ TiO_{2} $ based mixed $ Al_{2} %$ O_{3} $ and Pd. The $ H_{2} $S sensor shows high sensitivity and undesirable cross sensitivity effect using $ TiO_{2} $/$ Al_{2} %$ O_{3} $/Pd as sensing materials. |
| abstract_unstemmed |
Abstract The present investigation deals with the fabrication of $ H_{2} $S gas sensor based on semiconducting oxide,$ TiO_{2} $. Among the various metal oxide additives tested, $ Al_{2} %$ O_{3} $ is outstanding in promoting the sensing properties of nanosized $ TiO_{2} $ based $ H_{2} $S gas sensor. XRD pattern of $ TiO_{2} $ /$ Al_{2} %$ O_{3} $ shows complete phase formation with anatase structure and grain growth 45 nm. The $ TiO_{2} $ sensor loaded with 5 wt% $ Al_{2} %$ O_{3} $ and 0.5 wt% Pd shows increase in sensitivity to $ H_{2} $S. The cross sensitivity of 0.5 wt% Pd:5 wt% $ Al_{2} %$ O_{3} $ doped $ TiO_{2} $ also checked for CO, LPG and $ H_{2} $ gases. The highest sensitivity for low concentration of $ H_{2} $S was observed using $ TiO_{2} $ based mixed $ Al_{2} %$ O_{3} $ and Pd. The $ H_{2} $S sensor shows high sensitivity and undesirable cross sensitivity effect using $ TiO_{2} $/$ Al_{2} %$ O_{3} $/Pd as sensing materials. |
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15 |
| title_short |
Characterization of nanosized $ TiO_{2} $ based $ H_{2} $S gas sensor |
| url |
https://dx.doi.org/10.1007/s10853-006-0042-7 |
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true |
| author2 |
Bambole, D. R. Bodade, A. B. Padole, P. R. |
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Bambole, D. R. Bodade, A. B. Padole, P. R. |
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| doi_str |
10.1007/s10853-006-0042-7 |
| up_date |
2024-07-03T22:17:06.933Z |
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| score |
7.3998976 |