Reduction of a NiO thin film deposited by PLD on a single crystal YSZ (111) substrate
Abstract The NiO/YSZ interface prepared by depositing NiO on a single crystal YSZ (111) substrate has been investigated by transmission electron microscopy. As deposited, a very thin nickel layer ascribing to the nonstoichiometry at the very beginning growth of NiO and an amorphous silica phase resu...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Xing, JuanJuan [verfasserIn] Takeguchi, Masaki [verfasserIn] Tanaka, Miyoko [verfasserIn] Nakayama, Yoshiko [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2012 |
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| Schlagwörter: |
Transmission Electron Microscopy Specimen |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966, 47(2012), 13 vom: 24. März, Seite 5254-5262 |
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| Übergeordnetes Werk: |
volume:47 ; year:2012 ; number:13 ; day:24 ; month:03 ; pages:5254-5262 |
| Links: |
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| DOI / URN: |
10.1007/s10853-012-6410-6 |
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| Katalog-ID: |
SPR013871463 |
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| 520 | |a Abstract The NiO/YSZ interface prepared by depositing NiO on a single crystal YSZ (111) substrate has been investigated by transmission electron microscopy. As deposited, a very thin nickel layer ascribing to the nonstoichiometry at the very beginning growth of NiO and an amorphous silica phase resulting from silicon segregation were present at the interface. The orientational relationship of NiO %$ (1\overline{1} 1) %$//Ni %$ (1\overline{1} 1) %$//YSZ %$ (1\overline{1} 1) %$ with NiO [110]//Ni [110]//YSZ [110] was observed. The microstructural and chemical changes at the NiO/YSZ interface after being heated in vacuum and hydrogen indicated different reduction mechanisms. In vacuum, the reaction %$ {\text{NiO}} \to {\text{Ni}} + 1/ 2 {\text{ O}}_{ 2} \left( {\text{g}} \right) %$ was prevailing at the interface between NiO and pre-existing Ni, which led to the thickening of nickel layer. In hydrogen, the reduction initiated on the NiO surface was dominant, following the chemical equation $ H_{2} $ + $ O_{O} $ (NiO) → $ H_{2} $O (g) + $ V_{O} $.. (NiO) + 2e (Ni). | ||
| 650 | 4 | |a Nickel Layer |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Transmission Electron Microscopy Specimen |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Pulse Laser Deposition Technique |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Strontium Zirconate |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Orientational Relationship |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Takeguchi, Masaki |e verfasserin |4 aut | |
| 700 | 1 | |a Tanaka, Miyoko |e verfasserin |4 aut | |
| 700 | 1 | |a Nakayama, Yoshiko |e verfasserin |4 aut | |
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10.1007/s10853-012-6410-6 doi (DE-627)SPR013871463 (SPR)s10853-012-6410-6-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Xing, JuanJuan verfasserin aut Reduction of a NiO thin film deposited by PLD on a single crystal YSZ (111) substrate 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The NiO/YSZ interface prepared by depositing NiO on a single crystal YSZ (111) substrate has been investigated by transmission electron microscopy. As deposited, a very thin nickel layer ascribing to the nonstoichiometry at the very beginning growth of NiO and an amorphous silica phase resulting from silicon segregation were present at the interface. The orientational relationship of NiO %$ (1\overline{1} 1) %$//Ni %$ (1\overline{1} 1) %$//YSZ %$ (1\overline{1} 1) %$ with NiO [110]//Ni [110]//YSZ [110] was observed. The microstructural and chemical changes at the NiO/YSZ interface after being heated in vacuum and hydrogen indicated different reduction mechanisms. In vacuum, the reaction %$ {\text{NiO}} \to {\text{Ni}} + 1/ 2 {\text{ O}}_{ 2} \left( {\text{g}} \right) %$ was prevailing at the interface between NiO and pre-existing Ni, which led to the thickening of nickel layer. In hydrogen, the reduction initiated on the NiO surface was dominant, following the chemical equation $ H_{2} $ + $ O_{O} $ (NiO) → $ H_{2} $O (g) + $ V_{O} $.. (NiO) + 2e (Ni). Nickel Layer (dpeaa)DE-He213 Transmission Electron Microscopy Specimen (dpeaa)DE-He213 Pulse Laser Deposition Technique (dpeaa)DE-He213 Strontium Zirconate (dpeaa)DE-He213 Orientational Relationship (dpeaa)DE-He213 Takeguchi, Masaki verfasserin aut Tanaka, Miyoko verfasserin aut Nakayama, Yoshiko verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 47(2012), 13 vom: 24. März, Seite 5254-5262 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:47 year:2012 number:13 day:24 month:03 pages:5254-5262 https://dx.doi.org/10.1007/s10853-012-6410-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 47 2012 13 24 03 5254-5262 |
| spelling |
10.1007/s10853-012-6410-6 doi (DE-627)SPR013871463 (SPR)s10853-012-6410-6-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Xing, JuanJuan verfasserin aut Reduction of a NiO thin film deposited by PLD on a single crystal YSZ (111) substrate 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The NiO/YSZ interface prepared by depositing NiO on a single crystal YSZ (111) substrate has been investigated by transmission electron microscopy. As deposited, a very thin nickel layer ascribing to the nonstoichiometry at the very beginning growth of NiO and an amorphous silica phase resulting from silicon segregation were present at the interface. The orientational relationship of NiO %$ (1\overline{1} 1) %$//Ni %$ (1\overline{1} 1) %$//YSZ %$ (1\overline{1} 1) %$ with NiO [110]//Ni [110]//YSZ [110] was observed. The microstructural and chemical changes at the NiO/YSZ interface after being heated in vacuum and hydrogen indicated different reduction mechanisms. In vacuum, the reaction %$ {\text{NiO}} \to {\text{Ni}} + 1/ 2 {\text{ O}}_{ 2} \left( {\text{g}} \right) %$ was prevailing at the interface between NiO and pre-existing Ni, which led to the thickening of nickel layer. In hydrogen, the reduction initiated on the NiO surface was dominant, following the chemical equation $ H_{2} $ + $ O_{O} $ (NiO) → $ H_{2} $O (g) + $ V_{O} $.. (NiO) + 2e (Ni). Nickel Layer (dpeaa)DE-He213 Transmission Electron Microscopy Specimen (dpeaa)DE-He213 Pulse Laser Deposition Technique (dpeaa)DE-He213 Strontium Zirconate (dpeaa)DE-He213 Orientational Relationship (dpeaa)DE-He213 Takeguchi, Masaki verfasserin aut Tanaka, Miyoko verfasserin aut Nakayama, Yoshiko verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 47(2012), 13 vom: 24. März, Seite 5254-5262 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:47 year:2012 number:13 day:24 month:03 pages:5254-5262 https://dx.doi.org/10.1007/s10853-012-6410-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 47 2012 13 24 03 5254-5262 |
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10.1007/s10853-012-6410-6 doi (DE-627)SPR013871463 (SPR)s10853-012-6410-6-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Xing, JuanJuan verfasserin aut Reduction of a NiO thin film deposited by PLD on a single crystal YSZ (111) substrate 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The NiO/YSZ interface prepared by depositing NiO on a single crystal YSZ (111) substrate has been investigated by transmission electron microscopy. As deposited, a very thin nickel layer ascribing to the nonstoichiometry at the very beginning growth of NiO and an amorphous silica phase resulting from silicon segregation were present at the interface. The orientational relationship of NiO %$ (1\overline{1} 1) %$//Ni %$ (1\overline{1} 1) %$//YSZ %$ (1\overline{1} 1) %$ with NiO [110]//Ni [110]//YSZ [110] was observed. The microstructural and chemical changes at the NiO/YSZ interface after being heated in vacuum and hydrogen indicated different reduction mechanisms. In vacuum, the reaction %$ {\text{NiO}} \to {\text{Ni}} + 1/ 2 {\text{ O}}_{ 2} \left( {\text{g}} \right) %$ was prevailing at the interface between NiO and pre-existing Ni, which led to the thickening of nickel layer. In hydrogen, the reduction initiated on the NiO surface was dominant, following the chemical equation $ H_{2} $ + $ O_{O} $ (NiO) → $ H_{2} $O (g) + $ V_{O} $.. (NiO) + 2e (Ni). Nickel Layer (dpeaa)DE-He213 Transmission Electron Microscopy Specimen (dpeaa)DE-He213 Pulse Laser Deposition Technique (dpeaa)DE-He213 Strontium Zirconate (dpeaa)DE-He213 Orientational Relationship (dpeaa)DE-He213 Takeguchi, Masaki verfasserin aut Tanaka, Miyoko verfasserin aut Nakayama, Yoshiko verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 47(2012), 13 vom: 24. März, Seite 5254-5262 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:47 year:2012 number:13 day:24 month:03 pages:5254-5262 https://dx.doi.org/10.1007/s10853-012-6410-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 47 2012 13 24 03 5254-5262 |
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10.1007/s10853-012-6410-6 doi (DE-627)SPR013871463 (SPR)s10853-012-6410-6-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Xing, JuanJuan verfasserin aut Reduction of a NiO thin film deposited by PLD on a single crystal YSZ (111) substrate 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The NiO/YSZ interface prepared by depositing NiO on a single crystal YSZ (111) substrate has been investigated by transmission electron microscopy. As deposited, a very thin nickel layer ascribing to the nonstoichiometry at the very beginning growth of NiO and an amorphous silica phase resulting from silicon segregation were present at the interface. The orientational relationship of NiO %$ (1\overline{1} 1) %$//Ni %$ (1\overline{1} 1) %$//YSZ %$ (1\overline{1} 1) %$ with NiO [110]//Ni [110]//YSZ [110] was observed. The microstructural and chemical changes at the NiO/YSZ interface after being heated in vacuum and hydrogen indicated different reduction mechanisms. In vacuum, the reaction %$ {\text{NiO}} \to {\text{Ni}} + 1/ 2 {\text{ O}}_{ 2} \left( {\text{g}} \right) %$ was prevailing at the interface between NiO and pre-existing Ni, which led to the thickening of nickel layer. In hydrogen, the reduction initiated on the NiO surface was dominant, following the chemical equation $ H_{2} $ + $ O_{O} $ (NiO) → $ H_{2} $O (g) + $ V_{O} $.. (NiO) + 2e (Ni). Nickel Layer (dpeaa)DE-He213 Transmission Electron Microscopy Specimen (dpeaa)DE-He213 Pulse Laser Deposition Technique (dpeaa)DE-He213 Strontium Zirconate (dpeaa)DE-He213 Orientational Relationship (dpeaa)DE-He213 Takeguchi, Masaki verfasserin aut Tanaka, Miyoko verfasserin aut Nakayama, Yoshiko verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 47(2012), 13 vom: 24. März, Seite 5254-5262 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:47 year:2012 number:13 day:24 month:03 pages:5254-5262 https://dx.doi.org/10.1007/s10853-012-6410-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 47 2012 13 24 03 5254-5262 |
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10.1007/s10853-012-6410-6 doi (DE-627)SPR013871463 (SPR)s10853-012-6410-6-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Xing, JuanJuan verfasserin aut Reduction of a NiO thin film deposited by PLD on a single crystal YSZ (111) substrate 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The NiO/YSZ interface prepared by depositing NiO on a single crystal YSZ (111) substrate has been investigated by transmission electron microscopy. As deposited, a very thin nickel layer ascribing to the nonstoichiometry at the very beginning growth of NiO and an amorphous silica phase resulting from silicon segregation were present at the interface. The orientational relationship of NiO %$ (1\overline{1} 1) %$//Ni %$ (1\overline{1} 1) %$//YSZ %$ (1\overline{1} 1) %$ with NiO [110]//Ni [110]//YSZ [110] was observed. The microstructural and chemical changes at the NiO/YSZ interface after being heated in vacuum and hydrogen indicated different reduction mechanisms. In vacuum, the reaction %$ {\text{NiO}} \to {\text{Ni}} + 1/ 2 {\text{ O}}_{ 2} \left( {\text{g}} \right) %$ was prevailing at the interface between NiO and pre-existing Ni, which led to the thickening of nickel layer. In hydrogen, the reduction initiated on the NiO surface was dominant, following the chemical equation $ H_{2} $ + $ O_{O} $ (NiO) → $ H_{2} $O (g) + $ V_{O} $.. (NiO) + 2e (Ni). Nickel Layer (dpeaa)DE-He213 Transmission Electron Microscopy Specimen (dpeaa)DE-He213 Pulse Laser Deposition Technique (dpeaa)DE-He213 Strontium Zirconate (dpeaa)DE-He213 Orientational Relationship (dpeaa)DE-He213 Takeguchi, Masaki verfasserin aut Tanaka, Miyoko verfasserin aut Nakayama, Yoshiko verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 47(2012), 13 vom: 24. März, Seite 5254-5262 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:47 year:2012 number:13 day:24 month:03 pages:5254-5262 https://dx.doi.org/10.1007/s10853-012-6410-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 47 2012 13 24 03 5254-5262 |
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English |
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Enthalten in Journal of materials science 47(2012), 13 vom: 24. März, Seite 5254-5262 volume:47 year:2012 number:13 day:24 month:03 pages:5254-5262 |
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Nickel Layer Transmission Electron Microscopy Specimen Pulse Laser Deposition Technique Strontium Zirconate Orientational Relationship |
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Journal of materials science |
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Xing, JuanJuan @@aut@@ Takeguchi, Masaki @@aut@@ Tanaka, Miyoko @@aut@@ Nakayama, Yoshiko @@aut@@ |
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2012-03-24T00:00:00Z |
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315293969 |
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As deposited, a very thin nickel layer ascribing to the nonstoichiometry at the very beginning growth of NiO and an amorphous silica phase resulting from silicon segregation were present at the interface. The orientational relationship of NiO %$ (1\overline{1} 1) %$//Ni %$ (1\overline{1} 1) %$//YSZ %$ (1\overline{1} 1) %$ with NiO [110]//Ni [110]//YSZ [110] was observed. The microstructural and chemical changes at the NiO/YSZ interface after being heated in vacuum and hydrogen indicated different reduction mechanisms. In vacuum, the reaction %$ {\text{NiO}} \to {\text{Ni}} + 1/ 2 {\text{ O}}_{ 2} \left( {\text{g}} \right) %$ was prevailing at the interface between NiO and pre-existing Ni, which led to the thickening of nickel layer. In hydrogen, the reduction initiated on the NiO surface was dominant, following the chemical equation $ H_{2} $ + $ O_{O} $ (NiO) → $ H_{2} $O (g) + $ V_{O} $.. 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|
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Xing, JuanJuan |
| spellingShingle |
Xing, JuanJuan ddc 670 bkl 51.00 misc Nickel Layer misc Transmission Electron Microscopy Specimen misc Pulse Laser Deposition Technique misc Strontium Zirconate misc Orientational Relationship Reduction of a NiO thin film deposited by PLD on a single crystal YSZ (111) substrate |
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Xing, JuanJuan |
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1573-4803 |
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670 ASE 51.00 bkl Reduction of a NiO thin film deposited by PLD on a single crystal YSZ (111) substrate Nickel Layer (dpeaa)DE-He213 Transmission Electron Microscopy Specimen (dpeaa)DE-He213 Pulse Laser Deposition Technique (dpeaa)DE-He213 Strontium Zirconate (dpeaa)DE-He213 Orientational Relationship (dpeaa)DE-He213 |
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ddc 670 bkl 51.00 misc Nickel Layer misc Transmission Electron Microscopy Specimen misc Pulse Laser Deposition Technique misc Strontium Zirconate misc Orientational Relationship |
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ddc 670 bkl 51.00 misc Nickel Layer misc Transmission Electron Microscopy Specimen misc Pulse Laser Deposition Technique misc Strontium Zirconate misc Orientational Relationship |
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ddc 670 bkl 51.00 misc Nickel Layer misc Transmission Electron Microscopy Specimen misc Pulse Laser Deposition Technique misc Strontium Zirconate misc Orientational Relationship |
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Reduction of a NiO thin film deposited by PLD on a single crystal YSZ (111) substrate |
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Reduction of a NiO thin film deposited by PLD on a single crystal YSZ (111) substrate |
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Xing, JuanJuan |
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Journal of materials science |
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Xing, JuanJuan Takeguchi, Masaki Tanaka, Miyoko Nakayama, Yoshiko |
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670 ASE 51.00 bkl |
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Elektronische Aufsätze |
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Xing, JuanJuan |
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10.1007/s10853-012-6410-6 |
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verfasserin |
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reduction of a nio thin film deposited by pld on a single crystal ysz (111) substrate |
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Reduction of a NiO thin film deposited by PLD on a single crystal YSZ (111) substrate |
| abstract |
Abstract The NiO/YSZ interface prepared by depositing NiO on a single crystal YSZ (111) substrate has been investigated by transmission electron microscopy. As deposited, a very thin nickel layer ascribing to the nonstoichiometry at the very beginning growth of NiO and an amorphous silica phase resulting from silicon segregation were present at the interface. The orientational relationship of NiO %$ (1\overline{1} 1) %$//Ni %$ (1\overline{1} 1) %$//YSZ %$ (1\overline{1} 1) %$ with NiO [110]//Ni [110]//YSZ [110] was observed. The microstructural and chemical changes at the NiO/YSZ interface after being heated in vacuum and hydrogen indicated different reduction mechanisms. In vacuum, the reaction %$ {\text{NiO}} \to {\text{Ni}} + 1/ 2 {\text{ O}}_{ 2} \left( {\text{g}} \right) %$ was prevailing at the interface between NiO and pre-existing Ni, which led to the thickening of nickel layer. In hydrogen, the reduction initiated on the NiO surface was dominant, following the chemical equation $ H_{2} $ + $ O_{O} $ (NiO) → $ H_{2} $O (g) + $ V_{O} $.. (NiO) + 2e (Ni). |
| abstractGer |
Abstract The NiO/YSZ interface prepared by depositing NiO on a single crystal YSZ (111) substrate has been investigated by transmission electron microscopy. As deposited, a very thin nickel layer ascribing to the nonstoichiometry at the very beginning growth of NiO and an amorphous silica phase resulting from silicon segregation were present at the interface. The orientational relationship of NiO %$ (1\overline{1} 1) %$//Ni %$ (1\overline{1} 1) %$//YSZ %$ (1\overline{1} 1) %$ with NiO [110]//Ni [110]//YSZ [110] was observed. The microstructural and chemical changes at the NiO/YSZ interface after being heated in vacuum and hydrogen indicated different reduction mechanisms. In vacuum, the reaction %$ {\text{NiO}} \to {\text{Ni}} + 1/ 2 {\text{ O}}_{ 2} \left( {\text{g}} \right) %$ was prevailing at the interface between NiO and pre-existing Ni, which led to the thickening of nickel layer. In hydrogen, the reduction initiated on the NiO surface was dominant, following the chemical equation $ H_{2} $ + $ O_{O} $ (NiO) → $ H_{2} $O (g) + $ V_{O} $.. (NiO) + 2e (Ni). |
| abstract_unstemmed |
Abstract The NiO/YSZ interface prepared by depositing NiO on a single crystal YSZ (111) substrate has been investigated by transmission electron microscopy. As deposited, a very thin nickel layer ascribing to the nonstoichiometry at the very beginning growth of NiO and an amorphous silica phase resulting from silicon segregation were present at the interface. The orientational relationship of NiO %$ (1\overline{1} 1) %$//Ni %$ (1\overline{1} 1) %$//YSZ %$ (1\overline{1} 1) %$ with NiO [110]//Ni [110]//YSZ [110] was observed. The microstructural and chemical changes at the NiO/YSZ interface after being heated in vacuum and hydrogen indicated different reduction mechanisms. In vacuum, the reaction %$ {\text{NiO}} \to {\text{Ni}} + 1/ 2 {\text{ O}}_{ 2} \left( {\text{g}} \right) %$ was prevailing at the interface between NiO and pre-existing Ni, which led to the thickening of nickel layer. In hydrogen, the reduction initiated on the NiO surface was dominant, following the chemical equation $ H_{2} $ + $ O_{O} $ (NiO) → $ H_{2} $O (g) + $ V_{O} $.. (NiO) + 2e (Ni). |
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| container_issue |
13 |
| title_short |
Reduction of a NiO thin film deposited by PLD on a single crystal YSZ (111) substrate |
| url |
https://dx.doi.org/10.1007/s10853-012-6410-6 |
| remote_bool |
true |
| author2 |
Takeguchi, Masaki Tanaka, Miyoko Nakayama, Yoshiko |
| author2Str |
Takeguchi, Masaki Tanaka, Miyoko Nakayama, Yoshiko |
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315293969 |
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| doi_str |
10.1007/s10853-012-6410-6 |
| up_date |
2024-07-03T22:41:42.942Z |
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| score |
7.399417 |