Nitrogen doping of ZnTe for the preparation of ZnTe/ZnO light-emitting diode
Abstract Nitrogen-doped p-type zinc telluride (p-ZnTe) films are prepared by sputtering in a mixture of nitrogen/argon plasma. The effect of doping level N (ratio of $ N_{2} $ flow rate to that for the mixed gas) in the range 0–10 % on the films properties is investigated. Heterojunction diodes are...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Rakhshani, A. E. [verfasserIn] Thomas, S. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2013 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966, 48(2013), 18 vom: 15. Mai, Seite 6386-6392 |
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| Übergeordnetes Werk: |
volume:48 ; year:2013 ; number:18 ; day:15 ; month:05 ; pages:6386-6392 |
| Links: |
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| DOI / URN: |
10.1007/s10853-013-7438-y |
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| Katalog-ID: |
SPR013884107 |
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| 520 | |a Abstract Nitrogen-doped p-type zinc telluride (p-ZnTe) films are prepared by sputtering in a mixture of nitrogen/argon plasma. The effect of doping level N (ratio of $ N_{2} $ flow rate to that for the mixed gas) in the range 0–10 % on the films properties is investigated. Heterojunction diodes are prepared on stainless steel flexible substrate from the p-ZnTe (doping level, N = 5 %) and solution-grown n-ZnO films. The junction parameters and light-emission properties of diodes are investigated. Doping level beyond N = 1 %, changes the cubic crystal structure of ZnTe to hexagonal and reduces the size of crystallites. At the doping level N = 2–4 %, films with the highest hole density of 2.5 × $ 10^{18} $ $ cm^{−3} $ and lowest band gap energy of 1.4 eV are obtained. The diodes junction built-in potential and the donor density in n-ZnO films are found to be in the range 0.4–0.7 V and 1.5 × $ 10^{17} $–1.4 × $ 10^{18} $ $ cm^{−3} $, respectively. Diodes exhibit electroluminescence in the UV and visible regions due to the band edge and defect emissions in ZnO. | ||
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| 650 | 4 | |a Stainless Steel Foil |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Thomas, S. |e verfasserin |4 aut | |
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10.1007/s10853-013-7438-y doi (DE-627)SPR013884107 (SPR)s10853-013-7438-y-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Rakhshani, A. E. verfasserin aut Nitrogen doping of ZnTe for the preparation of ZnTe/ZnO light-emitting diode 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Nitrogen-doped p-type zinc telluride (p-ZnTe) films are prepared by sputtering in a mixture of nitrogen/argon plasma. The effect of doping level N (ratio of $ N_{2} $ flow rate to that for the mixed gas) in the range 0–10 % on the films properties is investigated. Heterojunction diodes are prepared on stainless steel flexible substrate from the p-ZnTe (doping level, N = 5 %) and solution-grown n-ZnO films. The junction parameters and light-emission properties of diodes are investigated. Doping level beyond N = 1 %, changes the cubic crystal structure of ZnTe to hexagonal and reduces the size of crystallites. At the doping level N = 2–4 %, films with the highest hole density of 2.5 × $ 10^{18} $ $ cm^{−3} $ and lowest band gap energy of 1.4 eV are obtained. The diodes junction built-in potential and the donor density in n-ZnO films are found to be in the range 0.4–0.7 V and 1.5 × $ 10^{17} $–1.4 × $ 10^{18} $ $ cm^{−3} $, respectively. Diodes exhibit electroluminescence in the UV and visible regions due to the band edge and defect emissions in ZnO. Doping Level (dpeaa)DE-He213 ZnTe (dpeaa)DE-He213 Hole Density (dpeaa)DE-He213 Dope Film (dpeaa)DE-He213 Stainless Steel Foil (dpeaa)DE-He213 Thomas, S. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 48(2013), 18 vom: 15. Mai, Seite 6386-6392 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:48 year:2013 number:18 day:15 month:05 pages:6386-6392 https://dx.doi.org/10.1007/s10853-013-7438-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 48 2013 18 15 05 6386-6392 |
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10.1007/s10853-013-7438-y doi (DE-627)SPR013884107 (SPR)s10853-013-7438-y-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Rakhshani, A. E. verfasserin aut Nitrogen doping of ZnTe for the preparation of ZnTe/ZnO light-emitting diode 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Nitrogen-doped p-type zinc telluride (p-ZnTe) films are prepared by sputtering in a mixture of nitrogen/argon plasma. The effect of doping level N (ratio of $ N_{2} $ flow rate to that for the mixed gas) in the range 0–10 % on the films properties is investigated. Heterojunction diodes are prepared on stainless steel flexible substrate from the p-ZnTe (doping level, N = 5 %) and solution-grown n-ZnO films. The junction parameters and light-emission properties of diodes are investigated. Doping level beyond N = 1 %, changes the cubic crystal structure of ZnTe to hexagonal and reduces the size of crystallites. At the doping level N = 2–4 %, films with the highest hole density of 2.5 × $ 10^{18} $ $ cm^{−3} $ and lowest band gap energy of 1.4 eV are obtained. The diodes junction built-in potential and the donor density in n-ZnO films are found to be in the range 0.4–0.7 V and 1.5 × $ 10^{17} $–1.4 × $ 10^{18} $ $ cm^{−3} $, respectively. Diodes exhibit electroluminescence in the UV and visible regions due to the band edge and defect emissions in ZnO. Doping Level (dpeaa)DE-He213 ZnTe (dpeaa)DE-He213 Hole Density (dpeaa)DE-He213 Dope Film (dpeaa)DE-He213 Stainless Steel Foil (dpeaa)DE-He213 Thomas, S. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 48(2013), 18 vom: 15. Mai, Seite 6386-6392 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:48 year:2013 number:18 day:15 month:05 pages:6386-6392 https://dx.doi.org/10.1007/s10853-013-7438-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 48 2013 18 15 05 6386-6392 |
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10.1007/s10853-013-7438-y doi (DE-627)SPR013884107 (SPR)s10853-013-7438-y-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Rakhshani, A. E. verfasserin aut Nitrogen doping of ZnTe for the preparation of ZnTe/ZnO light-emitting diode 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Nitrogen-doped p-type zinc telluride (p-ZnTe) films are prepared by sputtering in a mixture of nitrogen/argon plasma. The effect of doping level N (ratio of $ N_{2} $ flow rate to that for the mixed gas) in the range 0–10 % on the films properties is investigated. Heterojunction diodes are prepared on stainless steel flexible substrate from the p-ZnTe (doping level, N = 5 %) and solution-grown n-ZnO films. The junction parameters and light-emission properties of diodes are investigated. Doping level beyond N = 1 %, changes the cubic crystal structure of ZnTe to hexagonal and reduces the size of crystallites. At the doping level N = 2–4 %, films with the highest hole density of 2.5 × $ 10^{18} $ $ cm^{−3} $ and lowest band gap energy of 1.4 eV are obtained. The diodes junction built-in potential and the donor density in n-ZnO films are found to be in the range 0.4–0.7 V and 1.5 × $ 10^{17} $–1.4 × $ 10^{18} $ $ cm^{−3} $, respectively. Diodes exhibit electroluminescence in the UV and visible regions due to the band edge and defect emissions in ZnO. Doping Level (dpeaa)DE-He213 ZnTe (dpeaa)DE-He213 Hole Density (dpeaa)DE-He213 Dope Film (dpeaa)DE-He213 Stainless Steel Foil (dpeaa)DE-He213 Thomas, S. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 48(2013), 18 vom: 15. Mai, Seite 6386-6392 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:48 year:2013 number:18 day:15 month:05 pages:6386-6392 https://dx.doi.org/10.1007/s10853-013-7438-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 48 2013 18 15 05 6386-6392 |
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10.1007/s10853-013-7438-y doi (DE-627)SPR013884107 (SPR)s10853-013-7438-y-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Rakhshani, A. E. verfasserin aut Nitrogen doping of ZnTe for the preparation of ZnTe/ZnO light-emitting diode 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Nitrogen-doped p-type zinc telluride (p-ZnTe) films are prepared by sputtering in a mixture of nitrogen/argon plasma. The effect of doping level N (ratio of $ N_{2} $ flow rate to that for the mixed gas) in the range 0–10 % on the films properties is investigated. Heterojunction diodes are prepared on stainless steel flexible substrate from the p-ZnTe (doping level, N = 5 %) and solution-grown n-ZnO films. The junction parameters and light-emission properties of diodes are investigated. Doping level beyond N = 1 %, changes the cubic crystal structure of ZnTe to hexagonal and reduces the size of crystallites. At the doping level N = 2–4 %, films with the highest hole density of 2.5 × $ 10^{18} $ $ cm^{−3} $ and lowest band gap energy of 1.4 eV are obtained. The diodes junction built-in potential and the donor density in n-ZnO films are found to be in the range 0.4–0.7 V and 1.5 × $ 10^{17} $–1.4 × $ 10^{18} $ $ cm^{−3} $, respectively. Diodes exhibit electroluminescence in the UV and visible regions due to the band edge and defect emissions in ZnO. Doping Level (dpeaa)DE-He213 ZnTe (dpeaa)DE-He213 Hole Density (dpeaa)DE-He213 Dope Film (dpeaa)DE-He213 Stainless Steel Foil (dpeaa)DE-He213 Thomas, S. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 48(2013), 18 vom: 15. Mai, Seite 6386-6392 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:48 year:2013 number:18 day:15 month:05 pages:6386-6392 https://dx.doi.org/10.1007/s10853-013-7438-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 48 2013 18 15 05 6386-6392 |
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10.1007/s10853-013-7438-y doi (DE-627)SPR013884107 (SPR)s10853-013-7438-y-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Rakhshani, A. E. verfasserin aut Nitrogen doping of ZnTe for the preparation of ZnTe/ZnO light-emitting diode 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Nitrogen-doped p-type zinc telluride (p-ZnTe) films are prepared by sputtering in a mixture of nitrogen/argon plasma. The effect of doping level N (ratio of $ N_{2} $ flow rate to that for the mixed gas) in the range 0–10 % on the films properties is investigated. Heterojunction diodes are prepared on stainless steel flexible substrate from the p-ZnTe (doping level, N = 5 %) and solution-grown n-ZnO films. The junction parameters and light-emission properties of diodes are investigated. Doping level beyond N = 1 %, changes the cubic crystal structure of ZnTe to hexagonal and reduces the size of crystallites. At the doping level N = 2–4 %, films with the highest hole density of 2.5 × $ 10^{18} $ $ cm^{−3} $ and lowest band gap energy of 1.4 eV are obtained. The diodes junction built-in potential and the donor density in n-ZnO films are found to be in the range 0.4–0.7 V and 1.5 × $ 10^{17} $–1.4 × $ 10^{18} $ $ cm^{−3} $, respectively. Diodes exhibit electroluminescence in the UV and visible regions due to the band edge and defect emissions in ZnO. Doping Level (dpeaa)DE-He213 ZnTe (dpeaa)DE-He213 Hole Density (dpeaa)DE-He213 Dope Film (dpeaa)DE-He213 Stainless Steel Foil (dpeaa)DE-He213 Thomas, S. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 48(2013), 18 vom: 15. Mai, Seite 6386-6392 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:48 year:2013 number:18 day:15 month:05 pages:6386-6392 https://dx.doi.org/10.1007/s10853-013-7438-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 48 2013 18 15 05 6386-6392 |
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E.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Nitrogen doping of ZnTe for the preparation of ZnTe/ZnO light-emitting diode</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2013</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Nitrogen-doped p-type zinc telluride (p-ZnTe) films are prepared by sputtering in a mixture of nitrogen/argon plasma. The effect of doping level N (ratio of $ N_{2} $ flow rate to that for the mixed gas) in the range 0–10 % on the films properties is investigated. Heterojunction diodes are prepared on stainless steel flexible substrate from the p-ZnTe (doping level, N = 5 %) and solution-grown n-ZnO films. The junction parameters and light-emission properties of diodes are investigated. Doping level beyond N = 1 %, changes the cubic crystal structure of ZnTe to hexagonal and reduces the size of crystallites. At the doping level N = 2–4 %, films with the highest hole density of 2.5 × $ 10^{18} $ $ cm^{−3} $ and lowest band gap energy of 1.4 eV are obtained. The diodes junction built-in potential and the donor density in n-ZnO films are found to be in the range 0.4–0.7 V and 1.5 × $ 10^{17} $–1.4 × $ 10^{18} $ $ cm^{−3} $, respectively. Diodes exhibit electroluminescence in the UV and visible regions due to the band edge and defect emissions in ZnO.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Doping Level</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">ZnTe</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Hole Density</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Dope Film</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Stainless Steel Foil</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Thomas, S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials science</subfield><subfield code="d">Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966</subfield><subfield code="g">48(2013), 18 vom: 15. 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Rakhshani, A. E. |
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Rakhshani, A. E. ddc 670 bkl 51.00 misc Doping Level misc ZnTe misc Hole Density misc Dope Film misc Stainless Steel Foil Nitrogen doping of ZnTe for the preparation of ZnTe/ZnO light-emitting diode |
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670 ASE 51.00 bkl Nitrogen doping of ZnTe for the preparation of ZnTe/ZnO light-emitting diode Doping Level (dpeaa)DE-He213 ZnTe (dpeaa)DE-He213 Hole Density (dpeaa)DE-He213 Dope Film (dpeaa)DE-He213 Stainless Steel Foil (dpeaa)DE-He213 |
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ddc 670 bkl 51.00 misc Doping Level misc ZnTe misc Hole Density misc Dope Film misc Stainless Steel Foil |
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ddc 670 bkl 51.00 misc Doping Level misc ZnTe misc Hole Density misc Dope Film misc Stainless Steel Foil |
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Nitrogen doping of ZnTe for the preparation of ZnTe/ZnO light-emitting diode |
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Nitrogen doping of ZnTe for the preparation of ZnTe/ZnO light-emitting diode |
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Rakhshani, A. E. |
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nitrogen doping of znte for the preparation of znte/zno light-emitting diode |
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Nitrogen doping of ZnTe for the preparation of ZnTe/ZnO light-emitting diode |
| abstract |
Abstract Nitrogen-doped p-type zinc telluride (p-ZnTe) films are prepared by sputtering in a mixture of nitrogen/argon plasma. The effect of doping level N (ratio of $ N_{2} $ flow rate to that for the mixed gas) in the range 0–10 % on the films properties is investigated. Heterojunction diodes are prepared on stainless steel flexible substrate from the p-ZnTe (doping level, N = 5 %) and solution-grown n-ZnO films. The junction parameters and light-emission properties of diodes are investigated. Doping level beyond N = 1 %, changes the cubic crystal structure of ZnTe to hexagonal and reduces the size of crystallites. At the doping level N = 2–4 %, films with the highest hole density of 2.5 × $ 10^{18} $ $ cm^{−3} $ and lowest band gap energy of 1.4 eV are obtained. The diodes junction built-in potential and the donor density in n-ZnO films are found to be in the range 0.4–0.7 V and 1.5 × $ 10^{17} $–1.4 × $ 10^{18} $ $ cm^{−3} $, respectively. Diodes exhibit electroluminescence in the UV and visible regions due to the band edge and defect emissions in ZnO. |
| abstractGer |
Abstract Nitrogen-doped p-type zinc telluride (p-ZnTe) films are prepared by sputtering in a mixture of nitrogen/argon plasma. The effect of doping level N (ratio of $ N_{2} $ flow rate to that for the mixed gas) in the range 0–10 % on the films properties is investigated. Heterojunction diodes are prepared on stainless steel flexible substrate from the p-ZnTe (doping level, N = 5 %) and solution-grown n-ZnO films. The junction parameters and light-emission properties of diodes are investigated. Doping level beyond N = 1 %, changes the cubic crystal structure of ZnTe to hexagonal and reduces the size of crystallites. At the doping level N = 2–4 %, films with the highest hole density of 2.5 × $ 10^{18} $ $ cm^{−3} $ and lowest band gap energy of 1.4 eV are obtained. The diodes junction built-in potential and the donor density in n-ZnO films are found to be in the range 0.4–0.7 V and 1.5 × $ 10^{17} $–1.4 × $ 10^{18} $ $ cm^{−3} $, respectively. Diodes exhibit electroluminescence in the UV and visible regions due to the band edge and defect emissions in ZnO. |
| abstract_unstemmed |
Abstract Nitrogen-doped p-type zinc telluride (p-ZnTe) films are prepared by sputtering in a mixture of nitrogen/argon plasma. The effect of doping level N (ratio of $ N_{2} $ flow rate to that for the mixed gas) in the range 0–10 % on the films properties is investigated. Heterojunction diodes are prepared on stainless steel flexible substrate from the p-ZnTe (doping level, N = 5 %) and solution-grown n-ZnO films. The junction parameters and light-emission properties of diodes are investigated. Doping level beyond N = 1 %, changes the cubic crystal structure of ZnTe to hexagonal and reduces the size of crystallites. At the doping level N = 2–4 %, films with the highest hole density of 2.5 × $ 10^{18} $ $ cm^{−3} $ and lowest band gap energy of 1.4 eV are obtained. The diodes junction built-in potential and the donor density in n-ZnO films are found to be in the range 0.4–0.7 V and 1.5 × $ 10^{17} $–1.4 × $ 10^{18} $ $ cm^{−3} $, respectively. Diodes exhibit electroluminescence in the UV and visible regions due to the band edge and defect emissions in ZnO. |
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18 |
| title_short |
Nitrogen doping of ZnTe for the preparation of ZnTe/ZnO light-emitting diode |
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https://dx.doi.org/10.1007/s10853-013-7438-y |
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Thomas, S. |
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Thomas, S. |
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| doi_str |
10.1007/s10853-013-7438-y |
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2024-07-03T22:46:45.403Z |
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| score |
7.3996096 |