Charge-based deep level transient spectroscopy of B-doped and undoped polycrystalline diamond films
Abstract The undoped and B-doped polycrystalline diamond thin film was synthesized by hot filament chemical vapor deposition and microwave plasma, respectively. The structural characterization was performed by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The electrical pro...
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Gespeichert in:
| Autor*in: |
Paprocki, Kazimierz [verfasserIn] Fabisiak, Kazimierz [verfasserIn] Bogdanowicz, Robert [verfasserIn] Gołuński, Łukasz [verfasserIn] Staryga, Elżbieta [verfasserIn] Szybowicz, Mirosław [verfasserIn] Kowalska, Magdalena [verfasserIn] Banaszak-Piechowska, Agnieszka [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2017 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966, 52(2017), 17 vom: 25. Mai, Seite 10119-10126 |
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| Übergeordnetes Werk: |
volume:52 ; year:2017 ; number:17 ; day:25 ; month:05 ; pages:10119-10126 |
| Links: |
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| DOI / URN: |
10.1007/s10853-017-1217-0 |
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SPR013923595 |
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| 520 | |a Abstract The undoped and B-doped polycrystalline diamond thin film was synthesized by hot filament chemical vapor deposition and microwave plasma, respectively. The structural characterization was performed by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The electrical properties of synthesized diamond layer were characterized by dc-conductivity method and charge deep level transient spectroscopy. The B-doped diamond layers show higher $ sp^{2} $/$ sp^{3} $ ratios in comparison with that of undoped layers what can have an essential influence on the localized density of states associated with shallow hydrogen acceptor states what is reflected in the values of activation energies which reached the values of 38 meV for B-doped and 55 meV for undoped diamond layers, respectively. The existence of deep level traps, as, for example, associated with B-related acceptors, was not observed. | ||
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| 700 | 1 | |a Bogdanowicz, Robert |e verfasserin |4 aut | |
| 700 | 1 | |a Gołuński, Łukasz |e verfasserin |4 aut | |
| 700 | 1 | |a Staryga, Elżbieta |e verfasserin |4 aut | |
| 700 | 1 | |a Szybowicz, Mirosław |e verfasserin |4 aut | |
| 700 | 1 | |a Kowalska, Magdalena |e verfasserin |4 aut | |
| 700 | 1 | |a Banaszak-Piechowska, Agnieszka |e verfasserin |4 aut | |
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10.1007/s10853-017-1217-0 doi (DE-627)SPR013923595 (SPR)s10853-017-1217-0-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Paprocki, Kazimierz verfasserin aut Charge-based deep level transient spectroscopy of B-doped and undoped polycrystalline diamond films 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The undoped and B-doped polycrystalline diamond thin film was synthesized by hot filament chemical vapor deposition and microwave plasma, respectively. The structural characterization was performed by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The electrical properties of synthesized diamond layer were characterized by dc-conductivity method and charge deep level transient spectroscopy. The B-doped diamond layers show higher $ sp^{2} $/$ sp^{3} $ ratios in comparison with that of undoped layers what can have an essential influence on the localized density of states associated with shallow hydrogen acceptor states what is reflected in the values of activation energies which reached the values of 38 meV for B-doped and 55 meV for undoped diamond layers, respectively. The existence of deep level traps, as, for example, associated with B-related acceptors, was not observed. Fabisiak, Kazimierz verfasserin aut Bogdanowicz, Robert verfasserin aut Gołuński, Łukasz verfasserin aut Staryga, Elżbieta verfasserin aut Szybowicz, Mirosław verfasserin aut Kowalska, Magdalena verfasserin aut Banaszak-Piechowska, Agnieszka verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 52(2017), 17 vom: 25. Mai, Seite 10119-10126 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:52 year:2017 number:17 day:25 month:05 pages:10119-10126 https://dx.doi.org/10.1007/s10853-017-1217-0 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 52 2017 17 25 05 10119-10126 |
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10.1007/s10853-017-1217-0 doi (DE-627)SPR013923595 (SPR)s10853-017-1217-0-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Paprocki, Kazimierz verfasserin aut Charge-based deep level transient spectroscopy of B-doped and undoped polycrystalline diamond films 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The undoped and B-doped polycrystalline diamond thin film was synthesized by hot filament chemical vapor deposition and microwave plasma, respectively. The structural characterization was performed by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The electrical properties of synthesized diamond layer were characterized by dc-conductivity method and charge deep level transient spectroscopy. The B-doped diamond layers show higher $ sp^{2} $/$ sp^{3} $ ratios in comparison with that of undoped layers what can have an essential influence on the localized density of states associated with shallow hydrogen acceptor states what is reflected in the values of activation energies which reached the values of 38 meV for B-doped and 55 meV for undoped diamond layers, respectively. The existence of deep level traps, as, for example, associated with B-related acceptors, was not observed. Fabisiak, Kazimierz verfasserin aut Bogdanowicz, Robert verfasserin aut Gołuński, Łukasz verfasserin aut Staryga, Elżbieta verfasserin aut Szybowicz, Mirosław verfasserin aut Kowalska, Magdalena verfasserin aut Banaszak-Piechowska, Agnieszka verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 52(2017), 17 vom: 25. Mai, Seite 10119-10126 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:52 year:2017 number:17 day:25 month:05 pages:10119-10126 https://dx.doi.org/10.1007/s10853-017-1217-0 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 52 2017 17 25 05 10119-10126 |
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10.1007/s10853-017-1217-0 doi (DE-627)SPR013923595 (SPR)s10853-017-1217-0-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Paprocki, Kazimierz verfasserin aut Charge-based deep level transient spectroscopy of B-doped and undoped polycrystalline diamond films 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The undoped and B-doped polycrystalline diamond thin film was synthesized by hot filament chemical vapor deposition and microwave plasma, respectively. The structural characterization was performed by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The electrical properties of synthesized diamond layer were characterized by dc-conductivity method and charge deep level transient spectroscopy. The B-doped diamond layers show higher $ sp^{2} $/$ sp^{3} $ ratios in comparison with that of undoped layers what can have an essential influence on the localized density of states associated with shallow hydrogen acceptor states what is reflected in the values of activation energies which reached the values of 38 meV for B-doped and 55 meV for undoped diamond layers, respectively. The existence of deep level traps, as, for example, associated with B-related acceptors, was not observed. Fabisiak, Kazimierz verfasserin aut Bogdanowicz, Robert verfasserin aut Gołuński, Łukasz verfasserin aut Staryga, Elżbieta verfasserin aut Szybowicz, Mirosław verfasserin aut Kowalska, Magdalena verfasserin aut Banaszak-Piechowska, Agnieszka verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 52(2017), 17 vom: 25. Mai, Seite 10119-10126 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:52 year:2017 number:17 day:25 month:05 pages:10119-10126 https://dx.doi.org/10.1007/s10853-017-1217-0 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 52 2017 17 25 05 10119-10126 |
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10.1007/s10853-017-1217-0 doi (DE-627)SPR013923595 (SPR)s10853-017-1217-0-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Paprocki, Kazimierz verfasserin aut Charge-based deep level transient spectroscopy of B-doped and undoped polycrystalline diamond films 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The undoped and B-doped polycrystalline diamond thin film was synthesized by hot filament chemical vapor deposition and microwave plasma, respectively. The structural characterization was performed by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The electrical properties of synthesized diamond layer were characterized by dc-conductivity method and charge deep level transient spectroscopy. The B-doped diamond layers show higher $ sp^{2} $/$ sp^{3} $ ratios in comparison with that of undoped layers what can have an essential influence on the localized density of states associated with shallow hydrogen acceptor states what is reflected in the values of activation energies which reached the values of 38 meV for B-doped and 55 meV for undoped diamond layers, respectively. The existence of deep level traps, as, for example, associated with B-related acceptors, was not observed. Fabisiak, Kazimierz verfasserin aut Bogdanowicz, Robert verfasserin aut Gołuński, Łukasz verfasserin aut Staryga, Elżbieta verfasserin aut Szybowicz, Mirosław verfasserin aut Kowalska, Magdalena verfasserin aut Banaszak-Piechowska, Agnieszka verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 52(2017), 17 vom: 25. Mai, Seite 10119-10126 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:52 year:2017 number:17 day:25 month:05 pages:10119-10126 https://dx.doi.org/10.1007/s10853-017-1217-0 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 52 2017 17 25 05 10119-10126 |
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10.1007/s10853-017-1217-0 doi (DE-627)SPR013923595 (SPR)s10853-017-1217-0-e DE-627 ger DE-627 rakwb eng 670 ASE 51.00 bkl Paprocki, Kazimierz verfasserin aut Charge-based deep level transient spectroscopy of B-doped and undoped polycrystalline diamond films 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The undoped and B-doped polycrystalline diamond thin film was synthesized by hot filament chemical vapor deposition and microwave plasma, respectively. The structural characterization was performed by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The electrical properties of synthesized diamond layer were characterized by dc-conductivity method and charge deep level transient spectroscopy. The B-doped diamond layers show higher $ sp^{2} $/$ sp^{3} $ ratios in comparison with that of undoped layers what can have an essential influence on the localized density of states associated with shallow hydrogen acceptor states what is reflected in the values of activation energies which reached the values of 38 meV for B-doped and 55 meV for undoped diamond layers, respectively. The existence of deep level traps, as, for example, associated with B-related acceptors, was not observed. Fabisiak, Kazimierz verfasserin aut Bogdanowicz, Robert verfasserin aut Gołuński, Łukasz verfasserin aut Staryga, Elżbieta verfasserin aut Szybowicz, Mirosław verfasserin aut Kowalska, Magdalena verfasserin aut Banaszak-Piechowska, Agnieszka verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1966 52(2017), 17 vom: 25. Mai, Seite 10119-10126 (DE-627)315293969 (DE-600)2015305-3 1573-4803 nnns volume:52 year:2017 number:17 day:25 month:05 pages:10119-10126 https://dx.doi.org/10.1007/s10853-017-1217-0 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.00 ASE AR 52 2017 17 25 05 10119-10126 |
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Paprocki, Kazimierz @@aut@@ Fabisiak, Kazimierz @@aut@@ Bogdanowicz, Robert @@aut@@ Gołuński, Łukasz @@aut@@ Staryga, Elżbieta @@aut@@ Szybowicz, Mirosław @@aut@@ Kowalska, Magdalena @@aut@@ Banaszak-Piechowska, Agnieszka @@aut@@ |
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The structural characterization was performed by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The electrical properties of synthesized diamond layer were characterized by dc-conductivity method and charge deep level transient spectroscopy. The B-doped diamond layers show higher $ sp^{2} $/$ sp^{3} $ ratios in comparison with that of undoped layers what can have an essential influence on the localized density of states associated with shallow hydrogen acceptor states what is reflected in the values of activation energies which reached the values of 38 meV for B-doped and 55 meV for undoped diamond layers, respectively. 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Paprocki, Kazimierz |
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Paprocki, Kazimierz ddc 670 bkl 51.00 Charge-based deep level transient spectroscopy of B-doped and undoped polycrystalline diamond films |
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670 ASE 51.00 bkl Charge-based deep level transient spectroscopy of B-doped and undoped polycrystalline diamond films |
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Charge-based deep level transient spectroscopy of B-doped and undoped polycrystalline diamond films |
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Charge-based deep level transient spectroscopy of B-doped and undoped polycrystalline diamond films |
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Paprocki, Kazimierz Fabisiak, Kazimierz Bogdanowicz, Robert Gołuński, Łukasz Staryga, Elżbieta Szybowicz, Mirosław Kowalska, Magdalena Banaszak-Piechowska, Agnieszka |
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charge-based deep level transient spectroscopy of b-doped and undoped polycrystalline diamond films |
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Charge-based deep level transient spectroscopy of B-doped and undoped polycrystalline diamond films |
| abstract |
Abstract The undoped and B-doped polycrystalline diamond thin film was synthesized by hot filament chemical vapor deposition and microwave plasma, respectively. The structural characterization was performed by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The electrical properties of synthesized diamond layer were characterized by dc-conductivity method and charge deep level transient spectroscopy. The B-doped diamond layers show higher $ sp^{2} $/$ sp^{3} $ ratios in comparison with that of undoped layers what can have an essential influence on the localized density of states associated with shallow hydrogen acceptor states what is reflected in the values of activation energies which reached the values of 38 meV for B-doped and 55 meV for undoped diamond layers, respectively. The existence of deep level traps, as, for example, associated with B-related acceptors, was not observed. |
| abstractGer |
Abstract The undoped and B-doped polycrystalline diamond thin film was synthesized by hot filament chemical vapor deposition and microwave plasma, respectively. The structural characterization was performed by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The electrical properties of synthesized diamond layer were characterized by dc-conductivity method and charge deep level transient spectroscopy. The B-doped diamond layers show higher $ sp^{2} $/$ sp^{3} $ ratios in comparison with that of undoped layers what can have an essential influence on the localized density of states associated with shallow hydrogen acceptor states what is reflected in the values of activation energies which reached the values of 38 meV for B-doped and 55 meV for undoped diamond layers, respectively. The existence of deep level traps, as, for example, associated with B-related acceptors, was not observed. |
| abstract_unstemmed |
Abstract The undoped and B-doped polycrystalline diamond thin film was synthesized by hot filament chemical vapor deposition and microwave plasma, respectively. The structural characterization was performed by scanning electron microscopy, X-ray diffraction and Raman spectroscopy. The electrical properties of synthesized diamond layer were characterized by dc-conductivity method and charge deep level transient spectroscopy. The B-doped diamond layers show higher $ sp^{2} $/$ sp^{3} $ ratios in comparison with that of undoped layers what can have an essential influence on the localized density of states associated with shallow hydrogen acceptor states what is reflected in the values of activation energies which reached the values of 38 meV for B-doped and 55 meV for undoped diamond layers, respectively. The existence of deep level traps, as, for example, associated with B-related acceptors, was not observed. |
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17 |
| title_short |
Charge-based deep level transient spectroscopy of B-doped and undoped polycrystalline diamond films |
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https://dx.doi.org/10.1007/s10853-017-1217-0 |
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| author2 |
Fabisiak, Kazimierz Bogdanowicz, Robert Gołuński, Łukasz Staryga, Elżbieta Szybowicz, Mirosław Kowalska, Magdalena Banaszak-Piechowska, Agnieszka |
| author2Str |
Fabisiak, Kazimierz Bogdanowicz, Robert Gołuński, Łukasz Staryga, Elżbieta Szybowicz, Mirosław Kowalska, Magdalena Banaszak-Piechowska, Agnieszka |
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| doi_str |
10.1007/s10853-017-1217-0 |
| up_date |
2024-07-03T23:02:48.394Z |
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1803600808806187008 |
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| score |
7.3993683 |