Effect of electrical operation on the defect states in organic semiconductors
Abstract We have investigated the role of the trapping process in degradation mechanisms of poly(9,9-dihexylfluorene-co-N,N-di(9,9-dihexyl-2-fluorenyl)-N-phenylamine) (PF) based diodes, after aging (at half lifetime) by electrical stress. By using the Charge based Deep Level Transient Spectroscopy,...
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| Autor*in: |
Nguyen, Thien Phap [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2008 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media, LLC 2008 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990, 19(2008), Suppl 1 vom: 24. März, Seite 92-95 |
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| Übergeordnetes Werk: |
volume:19 ; year:2008 ; number:Suppl 1 ; day:24 ; month:03 ; pages:92-95 |
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| DOI / URN: |
10.1007/s10854-008-9693-2 |
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SPR01396612X |
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| 520 | |a Abstract We have investigated the role of the trapping process in degradation mechanisms of poly(9,9-dihexylfluorene-co-N,N-di(9,9-dihexyl-2-fluorenyl)-N-phenylamine) (PF) based diodes, after aging (at half lifetime) by electrical stress. By using the Charge based Deep Level Transient Spectroscopy, we have determined the trap parameters in PF light emitting devices. The mean activation energies of the traps are in the range 0.13–0.60 eV from the band edges with capture cross sections of the order of $ 10^{–18} $ to $ 10^{–20} $ $ cm^{2} $. The trap densities are in the range of $ 10^{–16} $ to $ 10^{–17} $ $ cm^{−3} $. Upon aging, no new trap levels have been found indicating that the electrical stress did not create additional defect level in the polymer in contrast to previous investigations on other organic materials, which reported that the degradation of devices in humid atmosphere lead to the onset of new traps acting as recombination centers. Furthermore, aging would not affect uniformly the defect levels in the polymer. Shallow trap states (below 0.3 eV) remain stable, whereas the enhancement in trap density of deeper trap levels (above 0.3 eV) have been observed, suggesting that degradation by electrical stress leads to an increase in density of deep levels. | ||
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| 700 | 1 | |a Renaud, Cédric |4 aut | |
| 700 | 1 | |a Huang, Chun Hao |4 aut | |
| 700 | 1 | |a Lo, Chih-Nan |4 aut | |
| 700 | 1 | |a Lee, Chih-Wen |4 aut | |
| 700 | 1 | |a Hsu, Chain-Shu |4 aut | |
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10.1007/s10854-008-9693-2 doi (DE-627)SPR01396612X (SPR)s10854-008-9693-2-e DE-627 ger DE-627 rakwb eng Nguyen, Thien Phap verfasserin aut Effect of electrical operation on the defect states in organic semiconductors 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer Science+Business Media, LLC 2008 Abstract We have investigated the role of the trapping process in degradation mechanisms of poly(9,9-dihexylfluorene-co-N,N-di(9,9-dihexyl-2-fluorenyl)-N-phenylamine) (PF) based diodes, after aging (at half lifetime) by electrical stress. By using the Charge based Deep Level Transient Spectroscopy, we have determined the trap parameters in PF light emitting devices. The mean activation energies of the traps are in the range 0.13–0.60 eV from the band edges with capture cross sections of the order of $ 10^{–18} $ to $ 10^{–20} $ $ cm^{2} $. The trap densities are in the range of $ 10^{–16} $ to $ 10^{–17} $ $ cm^{−3} $. Upon aging, no new trap levels have been found indicating that the electrical stress did not create additional defect level in the polymer in contrast to previous investigations on other organic materials, which reported that the degradation of devices in humid atmosphere lead to the onset of new traps acting as recombination centers. Furthermore, aging would not affect uniformly the defect levels in the polymer. Shallow trap states (below 0.3 eV) remain stable, whereas the enhancement in trap density of deeper trap levels (above 0.3 eV) have been observed, suggesting that degradation by electrical stress leads to an increase in density of deep levels. Organic Semiconductor (dpeaa)DE-He213 Deep Level Transient Spectroscopy (dpeaa)DE-He213 Trap Level (dpeaa)DE-He213 Thermally Stimulate Current (dpeaa)DE-He213 Polyfluorene (dpeaa)DE-He213 Renaud, Cédric aut Huang, Chun Hao aut Lo, Chih-Nan aut Lee, Chih-Wen aut Hsu, Chain-Shu aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 19(2008), Suppl 1 vom: 24. März, Seite 92-95 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:19 year:2008 number:Suppl 1 day:24 month:03 pages:92-95 https://dx.doi.org/10.1007/s10854-008-9693-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 19 2008 Suppl 1 24 03 92-95 |
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10.1007/s10854-008-9693-2 doi (DE-627)SPR01396612X (SPR)s10854-008-9693-2-e DE-627 ger DE-627 rakwb eng Nguyen, Thien Phap verfasserin aut Effect of electrical operation on the defect states in organic semiconductors 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer Science+Business Media, LLC 2008 Abstract We have investigated the role of the trapping process in degradation mechanisms of poly(9,9-dihexylfluorene-co-N,N-di(9,9-dihexyl-2-fluorenyl)-N-phenylamine) (PF) based diodes, after aging (at half lifetime) by electrical stress. By using the Charge based Deep Level Transient Spectroscopy, we have determined the trap parameters in PF light emitting devices. The mean activation energies of the traps are in the range 0.13–0.60 eV from the band edges with capture cross sections of the order of $ 10^{–18} $ to $ 10^{–20} $ $ cm^{2} $. The trap densities are in the range of $ 10^{–16} $ to $ 10^{–17} $ $ cm^{−3} $. Upon aging, no new trap levels have been found indicating that the electrical stress did not create additional defect level in the polymer in contrast to previous investigations on other organic materials, which reported that the degradation of devices in humid atmosphere lead to the onset of new traps acting as recombination centers. Furthermore, aging would not affect uniformly the defect levels in the polymer. Shallow trap states (below 0.3 eV) remain stable, whereas the enhancement in trap density of deeper trap levels (above 0.3 eV) have been observed, suggesting that degradation by electrical stress leads to an increase in density of deep levels. Organic Semiconductor (dpeaa)DE-He213 Deep Level Transient Spectroscopy (dpeaa)DE-He213 Trap Level (dpeaa)DE-He213 Thermally Stimulate Current (dpeaa)DE-He213 Polyfluorene (dpeaa)DE-He213 Renaud, Cédric aut Huang, Chun Hao aut Lo, Chih-Nan aut Lee, Chih-Wen aut Hsu, Chain-Shu aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 19(2008), Suppl 1 vom: 24. März, Seite 92-95 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:19 year:2008 number:Suppl 1 day:24 month:03 pages:92-95 https://dx.doi.org/10.1007/s10854-008-9693-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 19 2008 Suppl 1 24 03 92-95 |
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10.1007/s10854-008-9693-2 doi (DE-627)SPR01396612X (SPR)s10854-008-9693-2-e DE-627 ger DE-627 rakwb eng Nguyen, Thien Phap verfasserin aut Effect of electrical operation on the defect states in organic semiconductors 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer Science+Business Media, LLC 2008 Abstract We have investigated the role of the trapping process in degradation mechanisms of poly(9,9-dihexylfluorene-co-N,N-di(9,9-dihexyl-2-fluorenyl)-N-phenylamine) (PF) based diodes, after aging (at half lifetime) by electrical stress. By using the Charge based Deep Level Transient Spectroscopy, we have determined the trap parameters in PF light emitting devices. The mean activation energies of the traps are in the range 0.13–0.60 eV from the band edges with capture cross sections of the order of $ 10^{–18} $ to $ 10^{–20} $ $ cm^{2} $. The trap densities are in the range of $ 10^{–16} $ to $ 10^{–17} $ $ cm^{−3} $. Upon aging, no new trap levels have been found indicating that the electrical stress did not create additional defect level in the polymer in contrast to previous investigations on other organic materials, which reported that the degradation of devices in humid atmosphere lead to the onset of new traps acting as recombination centers. Furthermore, aging would not affect uniformly the defect levels in the polymer. Shallow trap states (below 0.3 eV) remain stable, whereas the enhancement in trap density of deeper trap levels (above 0.3 eV) have been observed, suggesting that degradation by electrical stress leads to an increase in density of deep levels. Organic Semiconductor (dpeaa)DE-He213 Deep Level Transient Spectroscopy (dpeaa)DE-He213 Trap Level (dpeaa)DE-He213 Thermally Stimulate Current (dpeaa)DE-He213 Polyfluorene (dpeaa)DE-He213 Renaud, Cédric aut Huang, Chun Hao aut Lo, Chih-Nan aut Lee, Chih-Wen aut Hsu, Chain-Shu aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 19(2008), Suppl 1 vom: 24. März, Seite 92-95 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:19 year:2008 number:Suppl 1 day:24 month:03 pages:92-95 https://dx.doi.org/10.1007/s10854-008-9693-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 19 2008 Suppl 1 24 03 92-95 |
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10.1007/s10854-008-9693-2 doi (DE-627)SPR01396612X (SPR)s10854-008-9693-2-e DE-627 ger DE-627 rakwb eng Nguyen, Thien Phap verfasserin aut Effect of electrical operation on the defect states in organic semiconductors 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer Science+Business Media, LLC 2008 Abstract We have investigated the role of the trapping process in degradation mechanisms of poly(9,9-dihexylfluorene-co-N,N-di(9,9-dihexyl-2-fluorenyl)-N-phenylamine) (PF) based diodes, after aging (at half lifetime) by electrical stress. By using the Charge based Deep Level Transient Spectroscopy, we have determined the trap parameters in PF light emitting devices. The mean activation energies of the traps are in the range 0.13–0.60 eV from the band edges with capture cross sections of the order of $ 10^{–18} $ to $ 10^{–20} $ $ cm^{2} $. The trap densities are in the range of $ 10^{–16} $ to $ 10^{–17} $ $ cm^{−3} $. Upon aging, no new trap levels have been found indicating that the electrical stress did not create additional defect level in the polymer in contrast to previous investigations on other organic materials, which reported that the degradation of devices in humid atmosphere lead to the onset of new traps acting as recombination centers. Furthermore, aging would not affect uniformly the defect levels in the polymer. Shallow trap states (below 0.3 eV) remain stable, whereas the enhancement in trap density of deeper trap levels (above 0.3 eV) have been observed, suggesting that degradation by electrical stress leads to an increase in density of deep levels. Organic Semiconductor (dpeaa)DE-He213 Deep Level Transient Spectroscopy (dpeaa)DE-He213 Trap Level (dpeaa)DE-He213 Thermally Stimulate Current (dpeaa)DE-He213 Polyfluorene (dpeaa)DE-He213 Renaud, Cédric aut Huang, Chun Hao aut Lo, Chih-Nan aut Lee, Chih-Wen aut Hsu, Chain-Shu aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 19(2008), Suppl 1 vom: 24. März, Seite 92-95 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:19 year:2008 number:Suppl 1 day:24 month:03 pages:92-95 https://dx.doi.org/10.1007/s10854-008-9693-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 19 2008 Suppl 1 24 03 92-95 |
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10.1007/s10854-008-9693-2 doi (DE-627)SPR01396612X (SPR)s10854-008-9693-2-e DE-627 ger DE-627 rakwb eng Nguyen, Thien Phap verfasserin aut Effect of electrical operation on the defect states in organic semiconductors 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer Science+Business Media, LLC 2008 Abstract We have investigated the role of the trapping process in degradation mechanisms of poly(9,9-dihexylfluorene-co-N,N-di(9,9-dihexyl-2-fluorenyl)-N-phenylamine) (PF) based diodes, after aging (at half lifetime) by electrical stress. By using the Charge based Deep Level Transient Spectroscopy, we have determined the trap parameters in PF light emitting devices. The mean activation energies of the traps are in the range 0.13–0.60 eV from the band edges with capture cross sections of the order of $ 10^{–18} $ to $ 10^{–20} $ $ cm^{2} $. The trap densities are in the range of $ 10^{–16} $ to $ 10^{–17} $ $ cm^{−3} $. Upon aging, no new trap levels have been found indicating that the electrical stress did not create additional defect level in the polymer in contrast to previous investigations on other organic materials, which reported that the degradation of devices in humid atmosphere lead to the onset of new traps acting as recombination centers. Furthermore, aging would not affect uniformly the defect levels in the polymer. Shallow trap states (below 0.3 eV) remain stable, whereas the enhancement in trap density of deeper trap levels (above 0.3 eV) have been observed, suggesting that degradation by electrical stress leads to an increase in density of deep levels. Organic Semiconductor (dpeaa)DE-He213 Deep Level Transient Spectroscopy (dpeaa)DE-He213 Trap Level (dpeaa)DE-He213 Thermally Stimulate Current (dpeaa)DE-He213 Polyfluorene (dpeaa)DE-He213 Renaud, Cédric aut Huang, Chun Hao aut Lo, Chih-Nan aut Lee, Chih-Wen aut Hsu, Chain-Shu aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 19(2008), Suppl 1 vom: 24. März, Seite 92-95 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:19 year:2008 number:Suppl 1 day:24 month:03 pages:92-95 https://dx.doi.org/10.1007/s10854-008-9693-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 19 2008 Suppl 1 24 03 92-95 |
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Nguyen, Thien Phap @@aut@@ Renaud, Cédric @@aut@@ Huang, Chun Hao @@aut@@ Lo, Chih-Nan @@aut@@ Lee, Chih-Wen @@aut@@ Hsu, Chain-Shu @@aut@@ |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR01396612X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230323103931.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201006s2008 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10854-008-9693-2</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR01396612X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s10854-008-9693-2-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Nguyen, Thien Phap</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Effect of electrical operation on the defect states in organic semiconductors</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2008</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Springer Science+Business Media, LLC 2008</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract We have investigated the role of the trapping process in degradation mechanisms of poly(9,9-dihexylfluorene-co-N,N-di(9,9-dihexyl-2-fluorenyl)-N-phenylamine) (PF) based diodes, after aging (at half lifetime) by electrical stress. 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effect of electrical operation on the defect states in organic semiconductors |
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Effect of electrical operation on the defect states in organic semiconductors |
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Abstract We have investigated the role of the trapping process in degradation mechanisms of poly(9,9-dihexylfluorene-co-N,N-di(9,9-dihexyl-2-fluorenyl)-N-phenylamine) (PF) based diodes, after aging (at half lifetime) by electrical stress. By using the Charge based Deep Level Transient Spectroscopy, we have determined the trap parameters in PF light emitting devices. The mean activation energies of the traps are in the range 0.13–0.60 eV from the band edges with capture cross sections of the order of $ 10^{–18} $ to $ 10^{–20} $ $ cm^{2} $. The trap densities are in the range of $ 10^{–16} $ to $ 10^{–17} $ $ cm^{−3} $. Upon aging, no new trap levels have been found indicating that the electrical stress did not create additional defect level in the polymer in contrast to previous investigations on other organic materials, which reported that the degradation of devices in humid atmosphere lead to the onset of new traps acting as recombination centers. Furthermore, aging would not affect uniformly the defect levels in the polymer. Shallow trap states (below 0.3 eV) remain stable, whereas the enhancement in trap density of deeper trap levels (above 0.3 eV) have been observed, suggesting that degradation by electrical stress leads to an increase in density of deep levels. © Springer Science+Business Media, LLC 2008 |
| abstractGer |
Abstract We have investigated the role of the trapping process in degradation mechanisms of poly(9,9-dihexylfluorene-co-N,N-di(9,9-dihexyl-2-fluorenyl)-N-phenylamine) (PF) based diodes, after aging (at half lifetime) by electrical stress. By using the Charge based Deep Level Transient Spectroscopy, we have determined the trap parameters in PF light emitting devices. The mean activation energies of the traps are in the range 0.13–0.60 eV from the band edges with capture cross sections of the order of $ 10^{–18} $ to $ 10^{–20} $ $ cm^{2} $. The trap densities are in the range of $ 10^{–16} $ to $ 10^{–17} $ $ cm^{−3} $. Upon aging, no new trap levels have been found indicating that the electrical stress did not create additional defect level in the polymer in contrast to previous investigations on other organic materials, which reported that the degradation of devices in humid atmosphere lead to the onset of new traps acting as recombination centers. Furthermore, aging would not affect uniformly the defect levels in the polymer. Shallow trap states (below 0.3 eV) remain stable, whereas the enhancement in trap density of deeper trap levels (above 0.3 eV) have been observed, suggesting that degradation by electrical stress leads to an increase in density of deep levels. © Springer Science+Business Media, LLC 2008 |
| abstract_unstemmed |
Abstract We have investigated the role of the trapping process in degradation mechanisms of poly(9,9-dihexylfluorene-co-N,N-di(9,9-dihexyl-2-fluorenyl)-N-phenylamine) (PF) based diodes, after aging (at half lifetime) by electrical stress. By using the Charge based Deep Level Transient Spectroscopy, we have determined the trap parameters in PF light emitting devices. The mean activation energies of the traps are in the range 0.13–0.60 eV from the band edges with capture cross sections of the order of $ 10^{–18} $ to $ 10^{–20} $ $ cm^{2} $. The trap densities are in the range of $ 10^{–16} $ to $ 10^{–17} $ $ cm^{−3} $. Upon aging, no new trap levels have been found indicating that the electrical stress did not create additional defect level in the polymer in contrast to previous investigations on other organic materials, which reported that the degradation of devices in humid atmosphere lead to the onset of new traps acting as recombination centers. Furthermore, aging would not affect uniformly the defect levels in the polymer. Shallow trap states (below 0.3 eV) remain stable, whereas the enhancement in trap density of deeper trap levels (above 0.3 eV) have been observed, suggesting that degradation by electrical stress leads to an increase in density of deep levels. © Springer Science+Business Media, LLC 2008 |
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Effect of electrical operation on the defect states in organic semiconductors |
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Renaud, Cédric Huang, Chun Hao Lo, Chih-Nan Lee, Chih-Wen Hsu, Chain-Shu |
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| score |
7.3998623 |