Thermal instability of electron traps in InAs/GaAs quantum dot structures
Abstract Deep level transient spectroscopy (DLTS) in temperature and frequency scanned modes has been used to characterize deep-level defects present in samples with InAs/GaAs quantum dots (QDs). Two deep energy traps have been studied in details, a trap with thermal activation energy at 1.03 eV, wh...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Kaniewska, M. [verfasserIn] Engström, O. [verfasserIn] Kaczmarczyk, M. [verfasserIn] Zaremba, G. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2008 |
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| Schlagwörter: |
Deep Level Transient Spectroscopy Deep Level Transient Spectroscopy Spectrum |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990, 19(2008), Suppl 1 vom: 03. Apr., Seite 101-106 |
|---|---|
| Übergeordnetes Werk: |
volume:19 ; year:2008 ; number:Suppl 1 ; day:03 ; month:04 ; pages:101-106 |
| Links: |
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| DOI / URN: |
10.1007/s10854-008-9703-4 |
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| Katalog-ID: |
SPR013966154 |
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| 245 | 1 | 0 | |a Thermal instability of electron traps in InAs/GaAs quantum dot structures |
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| 520 | |a Abstract Deep level transient spectroscopy (DLTS) in temperature and frequency scanned modes has been used to characterize deep-level defects present in samples with InAs/GaAs quantum dots (QDs). Two deep energy traps have been studied in details, a trap with thermal activation energy at 1.03 eV, which has no correspondence to DLTS data in the literature to make any comparison and an accompanied trap at 0.79 eV belonging to EL2 family. The concentration of the 1.03 eV trap exhibited significant changes with temperature, whereas the trap at 0.79 eV was stable on a reduced level. The results for the 1.03 eV trap are discussed in terms of a metastable double-oscillator. | ||
| 650 | 4 | |a Deep Level Transient Spectroscopy |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Trap Concentration |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Deep Level Transient Spectroscopy Spectrum |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Deep Level Transient Spectroscopy Measurement |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Deep Level Transient Spectroscopy Peak |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Engström, O. |e verfasserin |4 aut | |
| 700 | 1 | |a Kaczmarczyk, M. |e verfasserin |4 aut | |
| 700 | 1 | |a Zaremba, G. |e verfasserin |4 aut | |
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| 912 | |a GBV_ILN_2110 | ||
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10.1007/s10854-008-9703-4 doi (DE-627)SPR013966154 (SPR)s10854-008-9703-4-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Kaniewska, M. verfasserin aut Thermal instability of electron traps in InAs/GaAs quantum dot structures 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Deep level transient spectroscopy (DLTS) in temperature and frequency scanned modes has been used to characterize deep-level defects present in samples with InAs/GaAs quantum dots (QDs). Two deep energy traps have been studied in details, a trap with thermal activation energy at 1.03 eV, which has no correspondence to DLTS data in the literature to make any comparison and an accompanied trap at 0.79 eV belonging to EL2 family. The concentration of the 1.03 eV trap exhibited significant changes with temperature, whereas the trap at 0.79 eV was stable on a reduced level. The results for the 1.03 eV trap are discussed in terms of a metastable double-oscillator. Deep Level Transient Spectroscopy (dpeaa)DE-He213 Trap Concentration (dpeaa)DE-He213 Deep Level Transient Spectroscopy Spectrum (dpeaa)DE-He213 Deep Level Transient Spectroscopy Measurement (dpeaa)DE-He213 Deep Level Transient Spectroscopy Peak (dpeaa)DE-He213 Engström, O. verfasserin aut Kaczmarczyk, M. verfasserin aut Zaremba, G. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 19(2008), Suppl 1 vom: 03. Apr., Seite 101-106 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:19 year:2008 number:Suppl 1 day:03 month:04 pages:101-106 https://dx.doi.org/10.1007/s10854-008-9703-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 19 2008 Suppl 1 03 04 101-106 |
| spelling |
10.1007/s10854-008-9703-4 doi (DE-627)SPR013966154 (SPR)s10854-008-9703-4-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Kaniewska, M. verfasserin aut Thermal instability of electron traps in InAs/GaAs quantum dot structures 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Deep level transient spectroscopy (DLTS) in temperature and frequency scanned modes has been used to characterize deep-level defects present in samples with InAs/GaAs quantum dots (QDs). Two deep energy traps have been studied in details, a trap with thermal activation energy at 1.03 eV, which has no correspondence to DLTS data in the literature to make any comparison and an accompanied trap at 0.79 eV belonging to EL2 family. The concentration of the 1.03 eV trap exhibited significant changes with temperature, whereas the trap at 0.79 eV was stable on a reduced level. The results for the 1.03 eV trap are discussed in terms of a metastable double-oscillator. Deep Level Transient Spectroscopy (dpeaa)DE-He213 Trap Concentration (dpeaa)DE-He213 Deep Level Transient Spectroscopy Spectrum (dpeaa)DE-He213 Deep Level Transient Spectroscopy Measurement (dpeaa)DE-He213 Deep Level Transient Spectroscopy Peak (dpeaa)DE-He213 Engström, O. verfasserin aut Kaczmarczyk, M. verfasserin aut Zaremba, G. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 19(2008), Suppl 1 vom: 03. Apr., Seite 101-106 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:19 year:2008 number:Suppl 1 day:03 month:04 pages:101-106 https://dx.doi.org/10.1007/s10854-008-9703-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 19 2008 Suppl 1 03 04 101-106 |
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10.1007/s10854-008-9703-4 doi (DE-627)SPR013966154 (SPR)s10854-008-9703-4-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Kaniewska, M. verfasserin aut Thermal instability of electron traps in InAs/GaAs quantum dot structures 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Deep level transient spectroscopy (DLTS) in temperature and frequency scanned modes has been used to characterize deep-level defects present in samples with InAs/GaAs quantum dots (QDs). Two deep energy traps have been studied in details, a trap with thermal activation energy at 1.03 eV, which has no correspondence to DLTS data in the literature to make any comparison and an accompanied trap at 0.79 eV belonging to EL2 family. The concentration of the 1.03 eV trap exhibited significant changes with temperature, whereas the trap at 0.79 eV was stable on a reduced level. The results for the 1.03 eV trap are discussed in terms of a metastable double-oscillator. Deep Level Transient Spectroscopy (dpeaa)DE-He213 Trap Concentration (dpeaa)DE-He213 Deep Level Transient Spectroscopy Spectrum (dpeaa)DE-He213 Deep Level Transient Spectroscopy Measurement (dpeaa)DE-He213 Deep Level Transient Spectroscopy Peak (dpeaa)DE-He213 Engström, O. verfasserin aut Kaczmarczyk, M. verfasserin aut Zaremba, G. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 19(2008), Suppl 1 vom: 03. Apr., Seite 101-106 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:19 year:2008 number:Suppl 1 day:03 month:04 pages:101-106 https://dx.doi.org/10.1007/s10854-008-9703-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 19 2008 Suppl 1 03 04 101-106 |
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10.1007/s10854-008-9703-4 doi (DE-627)SPR013966154 (SPR)s10854-008-9703-4-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Kaniewska, M. verfasserin aut Thermal instability of electron traps in InAs/GaAs quantum dot structures 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Deep level transient spectroscopy (DLTS) in temperature and frequency scanned modes has been used to characterize deep-level defects present in samples with InAs/GaAs quantum dots (QDs). Two deep energy traps have been studied in details, a trap with thermal activation energy at 1.03 eV, which has no correspondence to DLTS data in the literature to make any comparison and an accompanied trap at 0.79 eV belonging to EL2 family. The concentration of the 1.03 eV trap exhibited significant changes with temperature, whereas the trap at 0.79 eV was stable on a reduced level. The results for the 1.03 eV trap are discussed in terms of a metastable double-oscillator. Deep Level Transient Spectroscopy (dpeaa)DE-He213 Trap Concentration (dpeaa)DE-He213 Deep Level Transient Spectroscopy Spectrum (dpeaa)DE-He213 Deep Level Transient Spectroscopy Measurement (dpeaa)DE-He213 Deep Level Transient Spectroscopy Peak (dpeaa)DE-He213 Engström, O. verfasserin aut Kaczmarczyk, M. verfasserin aut Zaremba, G. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 19(2008), Suppl 1 vom: 03. Apr., Seite 101-106 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:19 year:2008 number:Suppl 1 day:03 month:04 pages:101-106 https://dx.doi.org/10.1007/s10854-008-9703-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 19 2008 Suppl 1 03 04 101-106 |
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10.1007/s10854-008-9703-4 doi (DE-627)SPR013966154 (SPR)s10854-008-9703-4-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Kaniewska, M. verfasserin aut Thermal instability of electron traps in InAs/GaAs quantum dot structures 2008 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Deep level transient spectroscopy (DLTS) in temperature and frequency scanned modes has been used to characterize deep-level defects present in samples with InAs/GaAs quantum dots (QDs). Two deep energy traps have been studied in details, a trap with thermal activation energy at 1.03 eV, which has no correspondence to DLTS data in the literature to make any comparison and an accompanied trap at 0.79 eV belonging to EL2 family. The concentration of the 1.03 eV trap exhibited significant changes with temperature, whereas the trap at 0.79 eV was stable on a reduced level. The results for the 1.03 eV trap are discussed in terms of a metastable double-oscillator. Deep Level Transient Spectroscopy (dpeaa)DE-He213 Trap Concentration (dpeaa)DE-He213 Deep Level Transient Spectroscopy Spectrum (dpeaa)DE-He213 Deep Level Transient Spectroscopy Measurement (dpeaa)DE-He213 Deep Level Transient Spectroscopy Peak (dpeaa)DE-He213 Engström, O. verfasserin aut Kaczmarczyk, M. verfasserin aut Zaremba, G. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 19(2008), Suppl 1 vom: 03. Apr., Seite 101-106 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:19 year:2008 number:Suppl 1 day:03 month:04 pages:101-106 https://dx.doi.org/10.1007/s10854-008-9703-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 19 2008 Suppl 1 03 04 101-106 |
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Deep Level Transient Spectroscopy Trap Concentration Deep Level Transient Spectroscopy Spectrum Deep Level Transient Spectroscopy Measurement Deep Level Transient Spectroscopy Peak |
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Kaniewska, M. @@aut@@ Engström, O. @@aut@@ Kaczmarczyk, M. @@aut@@ Zaremba, G. @@aut@@ |
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Kaniewska, M. |
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600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Thermal instability of electron traps in InAs/GaAs quantum dot structures Deep Level Transient Spectroscopy (dpeaa)DE-He213 Trap Concentration (dpeaa)DE-He213 Deep Level Transient Spectroscopy Spectrum (dpeaa)DE-He213 Deep Level Transient Spectroscopy Measurement (dpeaa)DE-He213 Deep Level Transient Spectroscopy Peak (dpeaa)DE-He213 |
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ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 misc Deep Level Transient Spectroscopy misc Trap Concentration misc Deep Level Transient Spectroscopy Spectrum misc Deep Level Transient Spectroscopy Measurement misc Deep Level Transient Spectroscopy Peak |
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10.1007/s10854-008-9703-4 |
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thermal instability of electron traps in inas/gaas quantum dot structures |
| title_auth |
Thermal instability of electron traps in InAs/GaAs quantum dot structures |
| abstract |
Abstract Deep level transient spectroscopy (DLTS) in temperature and frequency scanned modes has been used to characterize deep-level defects present in samples with InAs/GaAs quantum dots (QDs). Two deep energy traps have been studied in details, a trap with thermal activation energy at 1.03 eV, which has no correspondence to DLTS data in the literature to make any comparison and an accompanied trap at 0.79 eV belonging to EL2 family. The concentration of the 1.03 eV trap exhibited significant changes with temperature, whereas the trap at 0.79 eV was stable on a reduced level. The results for the 1.03 eV trap are discussed in terms of a metastable double-oscillator. |
| abstractGer |
Abstract Deep level transient spectroscopy (DLTS) in temperature and frequency scanned modes has been used to characterize deep-level defects present in samples with InAs/GaAs quantum dots (QDs). Two deep energy traps have been studied in details, a trap with thermal activation energy at 1.03 eV, which has no correspondence to DLTS data in the literature to make any comparison and an accompanied trap at 0.79 eV belonging to EL2 family. The concentration of the 1.03 eV trap exhibited significant changes with temperature, whereas the trap at 0.79 eV was stable on a reduced level. The results for the 1.03 eV trap are discussed in terms of a metastable double-oscillator. |
| abstract_unstemmed |
Abstract Deep level transient spectroscopy (DLTS) in temperature and frequency scanned modes has been used to characterize deep-level defects present in samples with InAs/GaAs quantum dots (QDs). Two deep energy traps have been studied in details, a trap with thermal activation energy at 1.03 eV, which has no correspondence to DLTS data in the literature to make any comparison and an accompanied trap at 0.79 eV belonging to EL2 family. The concentration of the 1.03 eV trap exhibited significant changes with temperature, whereas the trap at 0.79 eV was stable on a reduced level. The results for the 1.03 eV trap are discussed in terms of a metastable double-oscillator. |
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| title_short |
Thermal instability of electron traps in InAs/GaAs quantum dot structures |
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Engström, O. Kaczmarczyk, M. Zaremba, G. |
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2024-07-03T23:19:12.125Z |
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|
| score |
7.4000416 |