Investigation on deep level defects in rapid thermal annealed undoped n-type InP
Abstract Deep levels in rapid thermal annealed Pd/n-InP Schottky contacts have been studied using deep level transient spectroscopy. It is observed that the as-deposited Pd/n-InP Schottky sample exhibit two deep levels with activation energies of 0.53 and 0.70 eV. In samples annealed at 400 °C, thre...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Janardhanam, V. [verfasserIn] Ashok Kumar, A. [verfasserIn] Rajagopal Reddy, V. [verfasserIn] Narasimha Reddy, P. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2009 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990, 21(2009), 3 vom: 07. Mai, Seite 285-290 |
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| Übergeordnetes Werk: |
volume:21 ; year:2009 ; number:3 ; day:07 ; month:05 ; pages:285-290 |
| Links: |
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| DOI / URN: |
10.1007/s10854-009-9906-3 |
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| Katalog-ID: |
SPR013970224 |
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| 520 | |a Abstract Deep levels in rapid thermal annealed Pd/n-InP Schottky contacts have been studied using deep level transient spectroscopy. It is observed that the as-deposited Pd/n-InP Schottky sample exhibit two deep levels with activation energies of 0.53 and 0.70 eV. In samples annealed at 400 °C, three deep levels having activation energies 0.18, 0.30 and 0.86 eV below the conduction band are observed and for samples annealed at 500 °C, four deep levels with activation energies 0.33, 0.44, 0.70 and 0.82 eV are observed. Fourier transform infrared spectroscopy measurements have been carried out on undoped as-deposited and annealed InP wafers at 300, 400 and 500 °C. The measurements revealed high concentration of hydrogen complexes in the form of $ V_{In} %$ H_{4} $ existing in InP wafer. The results show that $ V_{In} %$ H_{4} $ complex annihilates with increase of annealing temperature and results in the formation of PIn2+ and VP+ defects at 0.70 and 0.44 eV, respectively. | ||
| 650 | 4 | |a Deep Level |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Deep Level Transient Spectroscopy |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Defect Level |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Antisite Defect |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Deep Level Transient Spectroscopy Spectrum |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Ashok Kumar, A. |e verfasserin |4 aut | |
| 700 | 1 | |a Rajagopal Reddy, V. |e verfasserin |4 aut | |
| 700 | 1 | |a Narasimha Reddy, P. |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Journal of materials science |d Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 |g 21(2009), 3 vom: 07. Mai, Seite 285-290 |w (DE-627)317827154 |w (DE-600)2016994-2 |x 1573-482X |7 nnns |
| 773 | 1 | 8 | |g volume:21 |g year:2009 |g number:3 |g day:07 |g month:05 |g pages:285-290 |
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10.1007/s10854-009-9906-3 doi (DE-627)SPR013970224 (SPR)s10854-009-9906-3-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Janardhanam, V. verfasserin aut Investigation on deep level defects in rapid thermal annealed undoped n-type InP 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Deep levels in rapid thermal annealed Pd/n-InP Schottky contacts have been studied using deep level transient spectroscopy. It is observed that the as-deposited Pd/n-InP Schottky sample exhibit two deep levels with activation energies of 0.53 and 0.70 eV. In samples annealed at 400 °C, three deep levels having activation energies 0.18, 0.30 and 0.86 eV below the conduction band are observed and for samples annealed at 500 °C, four deep levels with activation energies 0.33, 0.44, 0.70 and 0.82 eV are observed. Fourier transform infrared spectroscopy measurements have been carried out on undoped as-deposited and annealed InP wafers at 300, 400 and 500 °C. The measurements revealed high concentration of hydrogen complexes in the form of $ V_{In} %$ H_{4} $ existing in InP wafer. The results show that $ V_{In} %$ H_{4} $ complex annihilates with increase of annealing temperature and results in the formation of PIn2+ and VP+ defects at 0.70 and 0.44 eV, respectively. Deep Level (dpeaa)DE-He213 Deep Level Transient Spectroscopy (dpeaa)DE-He213 Defect Level (dpeaa)DE-He213 Antisite Defect (dpeaa)DE-He213 Deep Level Transient Spectroscopy Spectrum (dpeaa)DE-He213 Ashok Kumar, A. verfasserin aut Rajagopal Reddy, V. verfasserin aut Narasimha Reddy, P. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 21(2009), 3 vom: 07. Mai, Seite 285-290 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:21 year:2009 number:3 day:07 month:05 pages:285-290 https://dx.doi.org/10.1007/s10854-009-9906-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 21 2009 3 07 05 285-290 |
| spelling |
10.1007/s10854-009-9906-3 doi (DE-627)SPR013970224 (SPR)s10854-009-9906-3-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Janardhanam, V. verfasserin aut Investigation on deep level defects in rapid thermal annealed undoped n-type InP 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Deep levels in rapid thermal annealed Pd/n-InP Schottky contacts have been studied using deep level transient spectroscopy. It is observed that the as-deposited Pd/n-InP Schottky sample exhibit two deep levels with activation energies of 0.53 and 0.70 eV. In samples annealed at 400 °C, three deep levels having activation energies 0.18, 0.30 and 0.86 eV below the conduction band are observed and for samples annealed at 500 °C, four deep levels with activation energies 0.33, 0.44, 0.70 and 0.82 eV are observed. Fourier transform infrared spectroscopy measurements have been carried out on undoped as-deposited and annealed InP wafers at 300, 400 and 500 °C. The measurements revealed high concentration of hydrogen complexes in the form of $ V_{In} %$ H_{4} $ existing in InP wafer. The results show that $ V_{In} %$ H_{4} $ complex annihilates with increase of annealing temperature and results in the formation of PIn2+ and VP+ defects at 0.70 and 0.44 eV, respectively. Deep Level (dpeaa)DE-He213 Deep Level Transient Spectroscopy (dpeaa)DE-He213 Defect Level (dpeaa)DE-He213 Antisite Defect (dpeaa)DE-He213 Deep Level Transient Spectroscopy Spectrum (dpeaa)DE-He213 Ashok Kumar, A. verfasserin aut Rajagopal Reddy, V. verfasserin aut Narasimha Reddy, P. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 21(2009), 3 vom: 07. Mai, Seite 285-290 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:21 year:2009 number:3 day:07 month:05 pages:285-290 https://dx.doi.org/10.1007/s10854-009-9906-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 21 2009 3 07 05 285-290 |
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10.1007/s10854-009-9906-3 doi (DE-627)SPR013970224 (SPR)s10854-009-9906-3-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Janardhanam, V. verfasserin aut Investigation on deep level defects in rapid thermal annealed undoped n-type InP 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Deep levels in rapid thermal annealed Pd/n-InP Schottky contacts have been studied using deep level transient spectroscopy. It is observed that the as-deposited Pd/n-InP Schottky sample exhibit two deep levels with activation energies of 0.53 and 0.70 eV. In samples annealed at 400 °C, three deep levels having activation energies 0.18, 0.30 and 0.86 eV below the conduction band are observed and for samples annealed at 500 °C, four deep levels with activation energies 0.33, 0.44, 0.70 and 0.82 eV are observed. Fourier transform infrared spectroscopy measurements have been carried out on undoped as-deposited and annealed InP wafers at 300, 400 and 500 °C. The measurements revealed high concentration of hydrogen complexes in the form of $ V_{In} %$ H_{4} $ existing in InP wafer. The results show that $ V_{In} %$ H_{4} $ complex annihilates with increase of annealing temperature and results in the formation of PIn2+ and VP+ defects at 0.70 and 0.44 eV, respectively. Deep Level (dpeaa)DE-He213 Deep Level Transient Spectroscopy (dpeaa)DE-He213 Defect Level (dpeaa)DE-He213 Antisite Defect (dpeaa)DE-He213 Deep Level Transient Spectroscopy Spectrum (dpeaa)DE-He213 Ashok Kumar, A. verfasserin aut Rajagopal Reddy, V. verfasserin aut Narasimha Reddy, P. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 21(2009), 3 vom: 07. Mai, Seite 285-290 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:21 year:2009 number:3 day:07 month:05 pages:285-290 https://dx.doi.org/10.1007/s10854-009-9906-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 21 2009 3 07 05 285-290 |
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10.1007/s10854-009-9906-3 doi (DE-627)SPR013970224 (SPR)s10854-009-9906-3-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Janardhanam, V. verfasserin aut Investigation on deep level defects in rapid thermal annealed undoped n-type InP 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Deep levels in rapid thermal annealed Pd/n-InP Schottky contacts have been studied using deep level transient spectroscopy. It is observed that the as-deposited Pd/n-InP Schottky sample exhibit two deep levels with activation energies of 0.53 and 0.70 eV. In samples annealed at 400 °C, three deep levels having activation energies 0.18, 0.30 and 0.86 eV below the conduction band are observed and for samples annealed at 500 °C, four deep levels with activation energies 0.33, 0.44, 0.70 and 0.82 eV are observed. Fourier transform infrared spectroscopy measurements have been carried out on undoped as-deposited and annealed InP wafers at 300, 400 and 500 °C. The measurements revealed high concentration of hydrogen complexes in the form of $ V_{In} %$ H_{4} $ existing in InP wafer. The results show that $ V_{In} %$ H_{4} $ complex annihilates with increase of annealing temperature and results in the formation of PIn2+ and VP+ defects at 0.70 and 0.44 eV, respectively. Deep Level (dpeaa)DE-He213 Deep Level Transient Spectroscopy (dpeaa)DE-He213 Defect Level (dpeaa)DE-He213 Antisite Defect (dpeaa)DE-He213 Deep Level Transient Spectroscopy Spectrum (dpeaa)DE-He213 Ashok Kumar, A. verfasserin aut Rajagopal Reddy, V. verfasserin aut Narasimha Reddy, P. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 21(2009), 3 vom: 07. Mai, Seite 285-290 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:21 year:2009 number:3 day:07 month:05 pages:285-290 https://dx.doi.org/10.1007/s10854-009-9906-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 21 2009 3 07 05 285-290 |
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10.1007/s10854-009-9906-3 doi (DE-627)SPR013970224 (SPR)s10854-009-9906-3-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Janardhanam, V. verfasserin aut Investigation on deep level defects in rapid thermal annealed undoped n-type InP 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Deep levels in rapid thermal annealed Pd/n-InP Schottky contacts have been studied using deep level transient spectroscopy. It is observed that the as-deposited Pd/n-InP Schottky sample exhibit two deep levels with activation energies of 0.53 and 0.70 eV. In samples annealed at 400 °C, three deep levels having activation energies 0.18, 0.30 and 0.86 eV below the conduction band are observed and for samples annealed at 500 °C, four deep levels with activation energies 0.33, 0.44, 0.70 and 0.82 eV are observed. Fourier transform infrared spectroscopy measurements have been carried out on undoped as-deposited and annealed InP wafers at 300, 400 and 500 °C. The measurements revealed high concentration of hydrogen complexes in the form of $ V_{In} %$ H_{4} $ existing in InP wafer. The results show that $ V_{In} %$ H_{4} $ complex annihilates with increase of annealing temperature and results in the formation of PIn2+ and VP+ defects at 0.70 and 0.44 eV, respectively. Deep Level (dpeaa)DE-He213 Deep Level Transient Spectroscopy (dpeaa)DE-He213 Defect Level (dpeaa)DE-He213 Antisite Defect (dpeaa)DE-He213 Deep Level Transient Spectroscopy Spectrum (dpeaa)DE-He213 Ashok Kumar, A. verfasserin aut Rajagopal Reddy, V. verfasserin aut Narasimha Reddy, P. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 21(2009), 3 vom: 07. Mai, Seite 285-290 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:21 year:2009 number:3 day:07 month:05 pages:285-290 https://dx.doi.org/10.1007/s10854-009-9906-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 21 2009 3 07 05 285-290 |
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Enthalten in Journal of materials science 21(2009), 3 vom: 07. Mai, Seite 285-290 volume:21 year:2009 number:3 day:07 month:05 pages:285-290 |
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It is observed that the as-deposited Pd/n-InP Schottky sample exhibit two deep levels with activation energies of 0.53 and 0.70 eV. In samples annealed at 400 °C, three deep levels having activation energies 0.18, 0.30 and 0.86 eV below the conduction band are observed and for samples annealed at 500 °C, four deep levels with activation energies 0.33, 0.44, 0.70 and 0.82 eV are observed. Fourier transform infrared spectroscopy measurements have been carried out on undoped as-deposited and annealed InP wafers at 300, 400 and 500 °C. The measurements revealed high concentration of hydrogen complexes in the form of $ V_{In} %$ H_{4} $ existing in InP wafer. 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Janardhanam, V. |
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Janardhanam, V. ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 misc Deep Level misc Deep Level Transient Spectroscopy misc Defect Level misc Antisite Defect misc Deep Level Transient Spectroscopy Spectrum Investigation on deep level defects in rapid thermal annealed undoped n-type InP |
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Janardhanam, V. |
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investigation on deep level defects in rapid thermal annealed undoped n-type inp |
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Investigation on deep level defects in rapid thermal annealed undoped n-type InP |
| abstract |
Abstract Deep levels in rapid thermal annealed Pd/n-InP Schottky contacts have been studied using deep level transient spectroscopy. It is observed that the as-deposited Pd/n-InP Schottky sample exhibit two deep levels with activation energies of 0.53 and 0.70 eV. In samples annealed at 400 °C, three deep levels having activation energies 0.18, 0.30 and 0.86 eV below the conduction band are observed and for samples annealed at 500 °C, four deep levels with activation energies 0.33, 0.44, 0.70 and 0.82 eV are observed. Fourier transform infrared spectroscopy measurements have been carried out on undoped as-deposited and annealed InP wafers at 300, 400 and 500 °C. The measurements revealed high concentration of hydrogen complexes in the form of $ V_{In} %$ H_{4} $ existing in InP wafer. The results show that $ V_{In} %$ H_{4} $ complex annihilates with increase of annealing temperature and results in the formation of PIn2+ and VP+ defects at 0.70 and 0.44 eV, respectively. |
| abstractGer |
Abstract Deep levels in rapid thermal annealed Pd/n-InP Schottky contacts have been studied using deep level transient spectroscopy. It is observed that the as-deposited Pd/n-InP Schottky sample exhibit two deep levels with activation energies of 0.53 and 0.70 eV. In samples annealed at 400 °C, three deep levels having activation energies 0.18, 0.30 and 0.86 eV below the conduction band are observed and for samples annealed at 500 °C, four deep levels with activation energies 0.33, 0.44, 0.70 and 0.82 eV are observed. Fourier transform infrared spectroscopy measurements have been carried out on undoped as-deposited and annealed InP wafers at 300, 400 and 500 °C. The measurements revealed high concentration of hydrogen complexes in the form of $ V_{In} %$ H_{4} $ existing in InP wafer. The results show that $ V_{In} %$ H_{4} $ complex annihilates with increase of annealing temperature and results in the formation of PIn2+ and VP+ defects at 0.70 and 0.44 eV, respectively. |
| abstract_unstemmed |
Abstract Deep levels in rapid thermal annealed Pd/n-InP Schottky contacts have been studied using deep level transient spectroscopy. It is observed that the as-deposited Pd/n-InP Schottky sample exhibit two deep levels with activation energies of 0.53 and 0.70 eV. In samples annealed at 400 °C, three deep levels having activation energies 0.18, 0.30 and 0.86 eV below the conduction band are observed and for samples annealed at 500 °C, four deep levels with activation energies 0.33, 0.44, 0.70 and 0.82 eV are observed. Fourier transform infrared spectroscopy measurements have been carried out on undoped as-deposited and annealed InP wafers at 300, 400 and 500 °C. The measurements revealed high concentration of hydrogen complexes in the form of $ V_{In} %$ H_{4} $ existing in InP wafer. The results show that $ V_{In} %$ H_{4} $ complex annihilates with increase of annealing temperature and results in the formation of PIn2+ and VP+ defects at 0.70 and 0.44 eV, respectively. |
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Investigation on deep level defects in rapid thermal annealed undoped n-type InP |
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Ashok Kumar, A. Rajagopal Reddy, V. Narasimha Reddy, P. |
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| score |
7.399974 |