Influence of pulse reversal on the performance of pulse electrodeposited copper indium sulphide solar cells

Abstract This paper reports for the first time influence of pulse reversal on the properties and performance of pulse electrodeposited $ CuInS_{2} $ films. The films exhibited single phase chalcopyrite structure. The intensity of the X-ray diffraction peaks become sharp and increase in intensity wit...
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Gespeichert in:

Autor*in:	Murali, K. R. [verfasserIn] Balasubramanian, M. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2013

Schlagwörter:	Solar Cell Duty Cycle Copper Indium Pulse Reversal Indium Selenide

Übergeordnetes Werk:	Enthalten in: Journal of materials science - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990, 24(2013), 9 vom: 16. Mai, Seite 3575-3580
Übergeordnetes Werk:	volume:24 ; year:2013 ; number:9 ; day:16 ; month:05 ; pages:3575-3580

Links:	Volltext

DOI / URN:	10.1007/s10854-013-1287-y

Katalog-ID:	SPR013986074

Internformat


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520			\|a Abstract This paper reports for the first time influence of pulse reversal on the properties and performance of pulse electrodeposited $ CuInS_{2} $ films. The films exhibited single phase chalcopyrite structure. The intensity of the X-ray diffraction peaks become sharp and increase in intensity with increase of pulse reversal time. The crystallite size increases with pulse reversal time. Resistivity of the films decreases from 2.0 to 0.05 Ω cm with increase of pulse reversal time. The mobility and carrier density increase with pulse reversal time. Solar cells fabricated with Mo/$ CuInS_{2} $/CdS/Ag have yielded reasonable photo outputs.
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matchkey_str	article:1573482X:2013----::nlecopleeeslnhpromnefuseetoeoiecpe
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bklnumber	33.61 51.10 51.40 53.09
publishDate	2013
allfields	10.1007/s10854-013-1287-y doi (DE-627)SPR013986074 (SPR)s10854-013-1287-y-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Murali, K. R. verfasserin aut Influence of pulse reversal on the performance of pulse electrodeposited copper indium sulphide solar cells 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper reports for the first time influence of pulse reversal on the properties and performance of pulse electrodeposited $ CuInS_{2} $ films. The films exhibited single phase chalcopyrite structure. The intensity of the X-ray diffraction peaks become sharp and increase in intensity with increase of pulse reversal time. The crystallite size increases with pulse reversal time. Resistivity of the films decreases from 2.0 to 0.05 Ω cm with increase of pulse reversal time. The mobility and carrier density increase with pulse reversal time. Solar cells fabricated with Mo/$ CuInS_{2} $/CdS/Ag have yielded reasonable photo outputs. Solar Cell (dpeaa)DE-He213 Duty Cycle (dpeaa)DE-He213 Copper Indium (dpeaa)DE-He213 Pulse Reversal (dpeaa)DE-He213 Indium Selenide (dpeaa)DE-He213 Balasubramanian, M. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 24(2013), 9 vom: 16. Mai, Seite 3575-3580 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:24 year:2013 number:9 day:16 month:05 pages:3575-3580 https://dx.doi.org/10.1007/s10854-013-1287-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 24 2013 9 16 05 3575-3580
spelling	10.1007/s10854-013-1287-y doi (DE-627)SPR013986074 (SPR)s10854-013-1287-y-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Murali, K. R. verfasserin aut Influence of pulse reversal on the performance of pulse electrodeposited copper indium sulphide solar cells 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper reports for the first time influence of pulse reversal on the properties and performance of pulse electrodeposited $ CuInS_{2} $ films. The films exhibited single phase chalcopyrite structure. The intensity of the X-ray diffraction peaks become sharp and increase in intensity with increase of pulse reversal time. The crystallite size increases with pulse reversal time. Resistivity of the films decreases from 2.0 to 0.05 Ω cm with increase of pulse reversal time. The mobility and carrier density increase with pulse reversal time. Solar cells fabricated with Mo/$ CuInS_{2} $/CdS/Ag have yielded reasonable photo outputs. Solar Cell (dpeaa)DE-He213 Duty Cycle (dpeaa)DE-He213 Copper Indium (dpeaa)DE-He213 Pulse Reversal (dpeaa)DE-He213 Indium Selenide (dpeaa)DE-He213 Balasubramanian, M. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 24(2013), 9 vom: 16. Mai, Seite 3575-3580 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:24 year:2013 number:9 day:16 month:05 pages:3575-3580 https://dx.doi.org/10.1007/s10854-013-1287-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 24 2013 9 16 05 3575-3580
allfields_unstemmed	10.1007/s10854-013-1287-y doi (DE-627)SPR013986074 (SPR)s10854-013-1287-y-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Murali, K. R. verfasserin aut Influence of pulse reversal on the performance of pulse electrodeposited copper indium sulphide solar cells 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper reports for the first time influence of pulse reversal on the properties and performance of pulse electrodeposited $ CuInS_{2} $ films. The films exhibited single phase chalcopyrite structure. The intensity of the X-ray diffraction peaks become sharp and increase in intensity with increase of pulse reversal time. The crystallite size increases with pulse reversal time. Resistivity of the films decreases from 2.0 to 0.05 Ω cm with increase of pulse reversal time. The mobility and carrier density increase with pulse reversal time. Solar cells fabricated with Mo/$ CuInS_{2} $/CdS/Ag have yielded reasonable photo outputs. Solar Cell (dpeaa)DE-He213 Duty Cycle (dpeaa)DE-He213 Copper Indium (dpeaa)DE-He213 Pulse Reversal (dpeaa)DE-He213 Indium Selenide (dpeaa)DE-He213 Balasubramanian, M. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 24(2013), 9 vom: 16. Mai, Seite 3575-3580 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:24 year:2013 number:9 day:16 month:05 pages:3575-3580 https://dx.doi.org/10.1007/s10854-013-1287-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 24 2013 9 16 05 3575-3580
allfieldsGer	10.1007/s10854-013-1287-y doi (DE-627)SPR013986074 (SPR)s10854-013-1287-y-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Murali, K. R. verfasserin aut Influence of pulse reversal on the performance of pulse electrodeposited copper indium sulphide solar cells 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper reports for the first time influence of pulse reversal on the properties and performance of pulse electrodeposited $ CuInS_{2} $ films. The films exhibited single phase chalcopyrite structure. The intensity of the X-ray diffraction peaks become sharp and increase in intensity with increase of pulse reversal time. The crystallite size increases with pulse reversal time. Resistivity of the films decreases from 2.0 to 0.05 Ω cm with increase of pulse reversal time. The mobility and carrier density increase with pulse reversal time. Solar cells fabricated with Mo/$ CuInS_{2} $/CdS/Ag have yielded reasonable photo outputs. Solar Cell (dpeaa)DE-He213 Duty Cycle (dpeaa)DE-He213 Copper Indium (dpeaa)DE-He213 Pulse Reversal (dpeaa)DE-He213 Indium Selenide (dpeaa)DE-He213 Balasubramanian, M. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 24(2013), 9 vom: 16. Mai, Seite 3575-3580 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:24 year:2013 number:9 day:16 month:05 pages:3575-3580 https://dx.doi.org/10.1007/s10854-013-1287-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 24 2013 9 16 05 3575-3580
allfieldsSound	10.1007/s10854-013-1287-y doi (DE-627)SPR013986074 (SPR)s10854-013-1287-y-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Murali, K. R. verfasserin aut Influence of pulse reversal on the performance of pulse electrodeposited copper indium sulphide solar cells 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper reports for the first time influence of pulse reversal on the properties and performance of pulse electrodeposited $ CuInS_{2} $ films. The films exhibited single phase chalcopyrite structure. The intensity of the X-ray diffraction peaks become sharp and increase in intensity with increase of pulse reversal time. The crystallite size increases with pulse reversal time. Resistivity of the films decreases from 2.0 to 0.05 Ω cm with increase of pulse reversal time. The mobility and carrier density increase with pulse reversal time. Solar cells fabricated with Mo/$ CuInS_{2} $/CdS/Ag have yielded reasonable photo outputs. Solar Cell (dpeaa)DE-He213 Duty Cycle (dpeaa)DE-He213 Copper Indium (dpeaa)DE-He213 Pulse Reversal (dpeaa)DE-He213 Indium Selenide (dpeaa)DE-He213 Balasubramanian, M. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 24(2013), 9 vom: 16. Mai, Seite 3575-3580 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:24 year:2013 number:9 day:16 month:05 pages:3575-3580 https://dx.doi.org/10.1007/s10854-013-1287-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 24 2013 9 16 05 3575-3580
language	English
source	Enthalten in Journal of materials science 24(2013), 9 vom: 16. Mai, Seite 3575-3580 volume:24 year:2013 number:9 day:16 month:05 pages:3575-3580
sourceStr	Enthalten in Journal of materials science 24(2013), 9 vom: 16. Mai, Seite 3575-3580 volume:24 year:2013 number:9 day:16 month:05 pages:3575-3580
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Solar Cell Duty Cycle Copper Indium Pulse Reversal Indium Selenide
dewey-raw	600
isfreeaccess_bool	false
container_title	Journal of materials science
authorswithroles_txt_mv	Murali, K. R. @@aut@@ Balasubramanian, M. @@aut@@
publishDateDaySort_date	2013-05-16T00:00:00Z
hierarchy_top_id	317827154
dewey-sort	3600
id	SPR013986074
language_de	englisch
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The films exhibited single phase chalcopyrite structure. The intensity of the X-ray diffraction peaks become sharp and increase in intensity with increase of pulse reversal time. The crystallite size increases with pulse reversal time. Resistivity of the films decreases from 2.0 to 0.05 Ω cm with increase of pulse reversal time. The mobility and carrier density increase with pulse reversal time. 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author	Murali, K. R.
spellingShingle	Murali, K. R. ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 misc Solar Cell misc Duty Cycle misc Copper Indium misc Pulse Reversal misc Indium Selenide Influence of pulse reversal on the performance of pulse electrodeposited copper indium sulphide solar cells
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topic_title	600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Influence of pulse reversal on the performance of pulse electrodeposited copper indium sulphide solar cells Solar Cell (dpeaa)DE-He213 Duty Cycle (dpeaa)DE-He213 Copper Indium (dpeaa)DE-He213 Pulse Reversal (dpeaa)DE-He213 Indium Selenide (dpeaa)DE-He213
topic	ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 misc Solar Cell misc Duty Cycle misc Copper Indium misc Pulse Reversal misc Indium Selenide
topic_unstemmed	ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 misc Solar Cell misc Duty Cycle misc Copper Indium misc Pulse Reversal misc Indium Selenide
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title	Influence of pulse reversal on the performance of pulse electrodeposited copper indium sulphide solar cells
ctrlnum	(DE-627)SPR013986074 (SPR)s10854-013-1287-y-e
title_full	Influence of pulse reversal on the performance of pulse electrodeposited copper indium sulphide solar cells
author_sort	Murali, K. R.
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author-letter	Murali, K. R.
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title_sort	influence of pulse reversal on the performance of pulse electrodeposited copper indium sulphide solar cells
title_auth	Influence of pulse reversal on the performance of pulse electrodeposited copper indium sulphide solar cells
abstract	Abstract This paper reports for the first time influence of pulse reversal on the properties and performance of pulse electrodeposited $ CuInS_{2} $ films. The films exhibited single phase chalcopyrite structure. The intensity of the X-ray diffraction peaks become sharp and increase in intensity with increase of pulse reversal time. The crystallite size increases with pulse reversal time. Resistivity of the films decreases from 2.0 to 0.05 Ω cm with increase of pulse reversal time. The mobility and carrier density increase with pulse reversal time. Solar cells fabricated with Mo/$ CuInS_{2} $/CdS/Ag have yielded reasonable photo outputs.
abstractGer	Abstract This paper reports for the first time influence of pulse reversal on the properties and performance of pulse electrodeposited $ CuInS_{2} $ films. The films exhibited single phase chalcopyrite structure. The intensity of the X-ray diffraction peaks become sharp and increase in intensity with increase of pulse reversal time. The crystallite size increases with pulse reversal time. Resistivity of the films decreases from 2.0 to 0.05 Ω cm with increase of pulse reversal time. The mobility and carrier density increase with pulse reversal time. Solar cells fabricated with Mo/$ CuInS_{2} $/CdS/Ag have yielded reasonable photo outputs.
abstract_unstemmed	Abstract This paper reports for the first time influence of pulse reversal on the properties and performance of pulse electrodeposited $ CuInS_{2} $ films. The films exhibited single phase chalcopyrite structure. The intensity of the X-ray diffraction peaks become sharp and increase in intensity with increase of pulse reversal time. The crystallite size increases with pulse reversal time. Resistivity of the films decreases from 2.0 to 0.05 Ω cm with increase of pulse reversal time. The mobility and carrier density increase with pulse reversal time. Solar cells fabricated with Mo/$ CuInS_{2} $/CdS/Ag have yielded reasonable photo outputs.
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container_issue	9
title_short	Influence of pulse reversal on the performance of pulse electrodeposited copper indium sulphide solar cells
url	https://dx.doi.org/10.1007/s10854-013-1287-y
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author2	Balasubramanian, M.
author2Str	Balasubramanian, M.
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doi_str	10.1007/s10854-013-1287-y
up_date	2024-07-03T23:26:27.068Z
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Influence of pulse reversal on the performance of pulse electrodeposited copper indium sulphide solar cells

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