Selenization of electrodeposited copper–indium alloy thin films for solar cell applications

Abstract Copper–Indium (Cu–In) alloys with sulfur and selenium have technological importance in the development of thin film solar cell technology. We have used potentiostatic electrochemical technique with three-electrode geometry for the deposition of Cu–In alloy thin films in an aqueous electroly...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Londhe, Priyanka U. [verfasserIn] Rohom, Ashwini B. [verfasserIn] Chaure, Nandu B. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2014

Schlagwörter:	Power Conversion Efficiency Ideality Factor Thin Film Solar Cell Alloy Film Alloy Thin Film

Übergeordnetes Werk:	Enthalten in: Journal of materials science - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990, 25(2014), 10 vom: 02. Aug., Seite 4643-4649
Übergeordnetes Werk:	volume:25 ; year:2014 ; number:10 ; day:02 ; month:08 ; pages:4643-4649

Links:	Volltext

DOI / URN:	10.1007/s10854-014-2217-3

Katalog-ID:	SPR013987771

Internformat


LEADER	01000caa a22002652 4500
001	SPR013987771
003	DE-627
005	20220111004525.0
007	cr uuu---uuuuu
008	201006s2014 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.1007/s10854-014-2217-3 \|2 doi
035			\|a (DE-627)SPR013987771
035			\|a (SPR)s10854-014-2217-3-e
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
082	0	4	\|a 600 \|a 670 \|a 620 \|q ASE
084			\|a 33.61 \|2 bkl
084			\|a 51.10 \|2 bkl
084			\|a 51.40 \|2 bkl
084			\|a 53.09 \|2 bkl
100	1		\|a Londhe, Priyanka U. \|e verfasserin \|4 aut
245	1	0	\|a Selenization of electrodeposited copper–indium alloy thin films for solar cell applications
264		1	\|c 2014
336			\|a Text \|b txt \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a Abstract Copper–Indium (Cu–In) alloys with sulfur and selenium have technological importance in the development of thin film solar cell technology. We have used potentiostatic electrochemical technique with three-electrode geometry for the deposition of Cu–In alloy thin films in an aqueous electrolyte. Cathodic voltammetry (CV) was thoroughly studied to optimize the electrodeposition parameters. The deposition potential for Cu–In alloy was found to be in the range −0.70 to −0.85 V versus Ag/AgCl reference electrode. Polycrystalline $ Cu_{x} %$ In_{y} $ thin films were electrodeposited from aqueous bath at room temperature and 45 °C. Effect of concentration of citric acid was extensively studied by CV measurements. The as-deposited Cu–In films were characterized with a range of characterization techniques to study the structural, morphological, compositional and electrical properties. Thin layers of Cu–In were selenized in a homemade tubular furnace at 400 °C, which reveals the formation of polycrystalline $ CuInSe_{2} $ (CISe) thin films with tetragonal structure. The band gap of CISe thin film was estimated ~1.05 eV by optical absorption spectroscopy. Nearly stoichiometric CISe thin film, Cu = 25.25 %, In = 26.48 % and Se = 48.27 % was obtained after selenization. The linear behavior of current density–voltage (J–V) was observed for Cu–In alloy thin films whereas, the selenized Cu–In alloy films (CISe) possess rectifying properties.
650		4	\|a Power Conversion Efficiency \|7 (dpeaa)DE-He213
650		4	\|a Ideality Factor \|7 (dpeaa)DE-He213
650		4	\|a Thin Film Solar Cell \|7 (dpeaa)DE-He213
650		4	\|a Alloy Film \|7 (dpeaa)DE-He213
650		4	\|a Alloy Thin Film \|7 (dpeaa)DE-He213
700	1		\|a Rohom, Ashwini B. \|e verfasserin \|4 aut
700	1		\|a Chaure, Nandu B. \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Journal of materials science \|d Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 \|g 25(2014), 10 vom: 02. Aug., Seite 4643-4649 \|w (DE-627)317827154 \|w (DE-600)2016994-2 \|x 1573-482X \|7 nnns
773	1	8	\|g volume:25 \|g year:2014 \|g number:10 \|g day:02 \|g month:08 \|g pages:4643-4649
856	4	0	\|u https://dx.doi.org/10.1007/s10854-014-2217-3 \|z lizenzpflichtig \|3 Volltext
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_SPRINGER
912			\|a GBV_ILN_11
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_31
912			\|a GBV_ILN_32
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
912			\|a GBV_ILN_100
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_120
912			\|a GBV_ILN_138
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_250
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2031
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2039
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2070
912			\|a GBV_ILN_2086
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2107
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2116
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2119
912			\|a GBV_ILN_2122
912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
912			\|a GBV_ILN_2144
912			\|a GBV_ILN_2147
912			\|a GBV_ILN_2148
912			\|a GBV_ILN_2152
912			\|a GBV_ILN_2153
912			\|a GBV_ILN_2188
912			\|a GBV_ILN_2190
912			\|a GBV_ILN_2232
912			\|a GBV_ILN_2336
912			\|a GBV_ILN_2446
912			\|a GBV_ILN_2470
912			\|a GBV_ILN_2472
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_2522
912			\|a GBV_ILN_2548
912			\|a GBV_ILN_4012
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4046
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4242
912			\|a GBV_ILN_4246
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4251
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4326
912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4334
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4336
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4393
912			\|a GBV_ILN_4700
936	b	k	\|a 33.61 \|q ASE
936	b	k	\|a 51.10 \|q ASE
936	b	k	\|a 51.40 \|q ASE
936	b	k	\|a 53.09 \|q ASE
951			\|a AR
952			\|d 25 \|j 2014 \|e 10 \|b 02 \|c 08 \|h 4643-4649

Indexfelder

author_variant	p u l pu pul a b r ab abr n b c nb nbc
matchkey_str	article:1573482X:2014----::eeiainflcrdpstdoprnimlotiflsos
hierarchy_sort_str	2014
bklnumber	33.61 51.10 51.40 53.09
publishDate	2014
allfields	10.1007/s10854-014-2217-3 doi (DE-627)SPR013987771 (SPR)s10854-014-2217-3-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Londhe, Priyanka U. verfasserin aut Selenization of electrodeposited copper–indium alloy thin films for solar cell applications 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Copper–Indium (Cu–In) alloys with sulfur and selenium have technological importance in the development of thin film solar cell technology. We have used potentiostatic electrochemical technique with three-electrode geometry for the deposition of Cu–In alloy thin films in an aqueous electrolyte. Cathodic voltammetry (CV) was thoroughly studied to optimize the electrodeposition parameters. The deposition potential for Cu–In alloy was found to be in the range −0.70 to −0.85 V versus Ag/AgCl reference electrode. Polycrystalline $ Cu_{x} %$ In_{y} $ thin films were electrodeposited from aqueous bath at room temperature and 45 °C. Effect of concentration of citric acid was extensively studied by CV measurements. The as-deposited Cu–In films were characterized with a range of characterization techniques to study the structural, morphological, compositional and electrical properties. Thin layers of Cu–In were selenized in a homemade tubular furnace at 400 °C, which reveals the formation of polycrystalline $ CuInSe_{2} $ (CISe) thin films with tetragonal structure. The band gap of CISe thin film was estimated ~1.05 eV by optical absorption spectroscopy. Nearly stoichiometric CISe thin film, Cu = 25.25 %, In = 26.48 % and Se = 48.27 % was obtained after selenization. The linear behavior of current density–voltage (J–V) was observed for Cu–In alloy thin films whereas, the selenized Cu–In alloy films (CISe) possess rectifying properties. Power Conversion Efficiency (dpeaa)DE-He213 Ideality Factor (dpeaa)DE-He213 Thin Film Solar Cell (dpeaa)DE-He213 Alloy Film (dpeaa)DE-He213 Alloy Thin Film (dpeaa)DE-He213 Rohom, Ashwini B. verfasserin aut Chaure, Nandu B. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 25(2014), 10 vom: 02. Aug., Seite 4643-4649 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:25 year:2014 number:10 day:02 month:08 pages:4643-4649 https://dx.doi.org/10.1007/s10854-014-2217-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 25 2014 10 02 08 4643-4649
spelling	10.1007/s10854-014-2217-3 doi (DE-627)SPR013987771 (SPR)s10854-014-2217-3-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Londhe, Priyanka U. verfasserin aut Selenization of electrodeposited copper–indium alloy thin films for solar cell applications 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Copper–Indium (Cu–In) alloys with sulfur and selenium have technological importance in the development of thin film solar cell technology. We have used potentiostatic electrochemical technique with three-electrode geometry for the deposition of Cu–In alloy thin films in an aqueous electrolyte. Cathodic voltammetry (CV) was thoroughly studied to optimize the electrodeposition parameters. The deposition potential for Cu–In alloy was found to be in the range −0.70 to −0.85 V versus Ag/AgCl reference electrode. Polycrystalline $ Cu_{x} %$ In_{y} $ thin films were electrodeposited from aqueous bath at room temperature and 45 °C. Effect of concentration of citric acid was extensively studied by CV measurements. The as-deposited Cu–In films were characterized with a range of characterization techniques to study the structural, morphological, compositional and electrical properties. Thin layers of Cu–In were selenized in a homemade tubular furnace at 400 °C, which reveals the formation of polycrystalline $ CuInSe_{2} $ (CISe) thin films with tetragonal structure. The band gap of CISe thin film was estimated ~1.05 eV by optical absorption spectroscopy. Nearly stoichiometric CISe thin film, Cu = 25.25 %, In = 26.48 % and Se = 48.27 % was obtained after selenization. The linear behavior of current density–voltage (J–V) was observed for Cu–In alloy thin films whereas, the selenized Cu–In alloy films (CISe) possess rectifying properties. Power Conversion Efficiency (dpeaa)DE-He213 Ideality Factor (dpeaa)DE-He213 Thin Film Solar Cell (dpeaa)DE-He213 Alloy Film (dpeaa)DE-He213 Alloy Thin Film (dpeaa)DE-He213 Rohom, Ashwini B. verfasserin aut Chaure, Nandu B. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 25(2014), 10 vom: 02. Aug., Seite 4643-4649 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:25 year:2014 number:10 day:02 month:08 pages:4643-4649 https://dx.doi.org/10.1007/s10854-014-2217-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 25 2014 10 02 08 4643-4649
allfields_unstemmed	10.1007/s10854-014-2217-3 doi (DE-627)SPR013987771 (SPR)s10854-014-2217-3-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Londhe, Priyanka U. verfasserin aut Selenization of electrodeposited copper–indium alloy thin films for solar cell applications 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Copper–Indium (Cu–In) alloys with sulfur and selenium have technological importance in the development of thin film solar cell technology. We have used potentiostatic electrochemical technique with three-electrode geometry for the deposition of Cu–In alloy thin films in an aqueous electrolyte. Cathodic voltammetry (CV) was thoroughly studied to optimize the electrodeposition parameters. The deposition potential for Cu–In alloy was found to be in the range −0.70 to −0.85 V versus Ag/AgCl reference electrode. Polycrystalline $ Cu_{x} %$ In_{y} $ thin films were electrodeposited from aqueous bath at room temperature and 45 °C. Effect of concentration of citric acid was extensively studied by CV measurements. The as-deposited Cu–In films were characterized with a range of characterization techniques to study the structural, morphological, compositional and electrical properties. Thin layers of Cu–In were selenized in a homemade tubular furnace at 400 °C, which reveals the formation of polycrystalline $ CuInSe_{2} $ (CISe) thin films with tetragonal structure. The band gap of CISe thin film was estimated ~1.05 eV by optical absorption spectroscopy. Nearly stoichiometric CISe thin film, Cu = 25.25 %, In = 26.48 % and Se = 48.27 % was obtained after selenization. The linear behavior of current density–voltage (J–V) was observed for Cu–In alloy thin films whereas, the selenized Cu–In alloy films (CISe) possess rectifying properties. Power Conversion Efficiency (dpeaa)DE-He213 Ideality Factor (dpeaa)DE-He213 Thin Film Solar Cell (dpeaa)DE-He213 Alloy Film (dpeaa)DE-He213 Alloy Thin Film (dpeaa)DE-He213 Rohom, Ashwini B. verfasserin aut Chaure, Nandu B. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 25(2014), 10 vom: 02. Aug., Seite 4643-4649 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:25 year:2014 number:10 day:02 month:08 pages:4643-4649 https://dx.doi.org/10.1007/s10854-014-2217-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 25 2014 10 02 08 4643-4649
allfieldsGer	10.1007/s10854-014-2217-3 doi (DE-627)SPR013987771 (SPR)s10854-014-2217-3-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Londhe, Priyanka U. verfasserin aut Selenization of electrodeposited copper–indium alloy thin films for solar cell applications 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Copper–Indium (Cu–In) alloys with sulfur and selenium have technological importance in the development of thin film solar cell technology. We have used potentiostatic electrochemical technique with three-electrode geometry for the deposition of Cu–In alloy thin films in an aqueous electrolyte. Cathodic voltammetry (CV) was thoroughly studied to optimize the electrodeposition parameters. The deposition potential for Cu–In alloy was found to be in the range −0.70 to −0.85 V versus Ag/AgCl reference electrode. Polycrystalline $ Cu_{x} %$ In_{y} $ thin films were electrodeposited from aqueous bath at room temperature and 45 °C. Effect of concentration of citric acid was extensively studied by CV measurements. The as-deposited Cu–In films were characterized with a range of characterization techniques to study the structural, morphological, compositional and electrical properties. Thin layers of Cu–In were selenized in a homemade tubular furnace at 400 °C, which reveals the formation of polycrystalline $ CuInSe_{2} $ (CISe) thin films with tetragonal structure. The band gap of CISe thin film was estimated ~1.05 eV by optical absorption spectroscopy. Nearly stoichiometric CISe thin film, Cu = 25.25 %, In = 26.48 % and Se = 48.27 % was obtained after selenization. The linear behavior of current density–voltage (J–V) was observed for Cu–In alloy thin films whereas, the selenized Cu–In alloy films (CISe) possess rectifying properties. Power Conversion Efficiency (dpeaa)DE-He213 Ideality Factor (dpeaa)DE-He213 Thin Film Solar Cell (dpeaa)DE-He213 Alloy Film (dpeaa)DE-He213 Alloy Thin Film (dpeaa)DE-He213 Rohom, Ashwini B. verfasserin aut Chaure, Nandu B. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 25(2014), 10 vom: 02. Aug., Seite 4643-4649 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:25 year:2014 number:10 day:02 month:08 pages:4643-4649 https://dx.doi.org/10.1007/s10854-014-2217-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 25 2014 10 02 08 4643-4649
allfieldsSound	10.1007/s10854-014-2217-3 doi (DE-627)SPR013987771 (SPR)s10854-014-2217-3-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Londhe, Priyanka U. verfasserin aut Selenization of electrodeposited copper–indium alloy thin films for solar cell applications 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Copper–Indium (Cu–In) alloys with sulfur and selenium have technological importance in the development of thin film solar cell technology. We have used potentiostatic electrochemical technique with three-electrode geometry for the deposition of Cu–In alloy thin films in an aqueous electrolyte. Cathodic voltammetry (CV) was thoroughly studied to optimize the electrodeposition parameters. The deposition potential for Cu–In alloy was found to be in the range −0.70 to −0.85 V versus Ag/AgCl reference electrode. Polycrystalline $ Cu_{x} %$ In_{y} $ thin films were electrodeposited from aqueous bath at room temperature and 45 °C. Effect of concentration of citric acid was extensively studied by CV measurements. The as-deposited Cu–In films were characterized with a range of characterization techniques to study the structural, morphological, compositional and electrical properties. Thin layers of Cu–In were selenized in a homemade tubular furnace at 400 °C, which reveals the formation of polycrystalline $ CuInSe_{2} $ (CISe) thin films with tetragonal structure. The band gap of CISe thin film was estimated ~1.05 eV by optical absorption spectroscopy. Nearly stoichiometric CISe thin film, Cu = 25.25 %, In = 26.48 % and Se = 48.27 % was obtained after selenization. The linear behavior of current density–voltage (J–V) was observed for Cu–In alloy thin films whereas, the selenized Cu–In alloy films (CISe) possess rectifying properties. Power Conversion Efficiency (dpeaa)DE-He213 Ideality Factor (dpeaa)DE-He213 Thin Film Solar Cell (dpeaa)DE-He213 Alloy Film (dpeaa)DE-He213 Alloy Thin Film (dpeaa)DE-He213 Rohom, Ashwini B. verfasserin aut Chaure, Nandu B. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 25(2014), 10 vom: 02. Aug., Seite 4643-4649 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:25 year:2014 number:10 day:02 month:08 pages:4643-4649 https://dx.doi.org/10.1007/s10854-014-2217-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 25 2014 10 02 08 4643-4649
language	English
source	Enthalten in Journal of materials science 25(2014), 10 vom: 02. Aug., Seite 4643-4649 volume:25 year:2014 number:10 day:02 month:08 pages:4643-4649
sourceStr	Enthalten in Journal of materials science 25(2014), 10 vom: 02. Aug., Seite 4643-4649 volume:25 year:2014 number:10 day:02 month:08 pages:4643-4649
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Power Conversion Efficiency Ideality Factor Thin Film Solar Cell Alloy Film Alloy Thin Film
dewey-raw	600
isfreeaccess_bool	false
container_title	Journal of materials science
authorswithroles_txt_mv	Londhe, Priyanka U. @@aut@@ Rohom, Ashwini B. @@aut@@ Chaure, Nandu B. @@aut@@
publishDateDaySort_date	2014-08-02T00:00:00Z
hierarchy_top_id	317827154
dewey-sort	3600
id	SPR013987771
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR013987771</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220111004525.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201006s2014 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10854-014-2217-3</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR013987771</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s10854-014-2217-3-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="a">670</subfield><subfield code="a">620</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.61</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.10</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.40</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.09</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Londhe, Priyanka U.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Selenization of electrodeposited copper–indium alloy thin films for solar cell applications</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2014</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Copper–Indium (Cu–In) alloys with sulfur and selenium have technological importance in the development of thin film solar cell technology. We have used potentiostatic electrochemical technique with three-electrode geometry for the deposition of Cu–In alloy thin films in an aqueous electrolyte. Cathodic voltammetry (CV) was thoroughly studied to optimize the electrodeposition parameters. The deposition potential for Cu–In alloy was found to be in the range −0.70 to −0.85 V versus Ag/AgCl reference electrode. Polycrystalline $ Cu_{x} %$ In_{y} $ thin films were electrodeposited from aqueous bath at room temperature and 45 °C. Effect of concentration of citric acid was extensively studied by CV measurements. The as-deposited Cu–In films were characterized with a range of characterization techniques to study the structural, morphological, compositional and electrical properties. Thin layers of Cu–In were selenized in a homemade tubular furnace at 400 °C, which reveals the formation of polycrystalline $ CuInSe_{2} $ (CISe) thin films with tetragonal structure. The band gap of CISe thin film was estimated ~1.05 eV by optical absorption spectroscopy. Nearly stoichiometric CISe thin film, Cu = 25.25 %, In = 26.48 % and Se = 48.27 % was obtained after selenization. The linear behavior of current density–voltage (J–V) was observed for Cu–In alloy thin films whereas, the selenized Cu–In alloy films (CISe) possess rectifying properties.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Power Conversion Efficiency</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ideality Factor</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Thin Film Solar Cell</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Alloy Film</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Alloy Thin Film</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Rohom, Ashwini B.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Chaure, Nandu B.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials science</subfield><subfield code="d">Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990</subfield><subfield code="g">25(2014), 10 vom: 02. Aug., Seite 4643-4649</subfield><subfield code="w">(DE-627)317827154</subfield><subfield code="w">(DE-600)2016994-2</subfield><subfield code="x">1573-482X</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:25</subfield><subfield code="g">year:2014</subfield><subfield code="g">number:10</subfield><subfield code="g">day:02</subfield><subfield code="g">month:08</subfield><subfield code="g">pages:4643-4649</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1007/s10854-014-2217-3</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_120</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_138</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_171</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_187</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_250</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_281</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_636</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2001</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2007</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2009</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2010</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2026</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2031</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2038</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2039</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2057</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2065</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2068</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2070</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2086</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2088</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2093</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2106</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2107</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2108</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2113</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2116</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2118</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2119</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2144</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2147</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2148</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2188</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2232</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2446</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2470</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2472</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2522</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2548</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4246</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.61</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">51.10</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">51.40</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.09</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">25</subfield><subfield code="j">2014</subfield><subfield code="e">10</subfield><subfield code="b">02</subfield><subfield code="c">08</subfield><subfield code="h">4643-4649</subfield></datafield></record></collection>
author	Londhe, Priyanka U.
spellingShingle	Londhe, Priyanka U. ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 misc Power Conversion Efficiency misc Ideality Factor misc Thin Film Solar Cell misc Alloy Film misc Alloy Thin Film Selenization of electrodeposited copper–indium alloy thin films for solar cell applications
authorStr	Londhe, Priyanka U.
ppnlink_with_tag_str_mv	@@773@@(DE-627)317827154
format	electronic Article
dewey-ones	600 - Technology 670 - Manufacturing 620 - Engineering & allied operations
delete_txt_mv	keep
author_role	aut aut aut
collection	springer
remote_str	true
illustrated	Not Illustrated
issn	1573-482X
topic_title	600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Selenization of electrodeposited copper–indium alloy thin films for solar cell applications Power Conversion Efficiency (dpeaa)DE-He213 Ideality Factor (dpeaa)DE-He213 Thin Film Solar Cell (dpeaa)DE-He213 Alloy Film (dpeaa)DE-He213 Alloy Thin Film (dpeaa)DE-He213
topic	ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 misc Power Conversion Efficiency misc Ideality Factor misc Thin Film Solar Cell misc Alloy Film misc Alloy Thin Film
topic_unstemmed	ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 misc Power Conversion Efficiency misc Ideality Factor misc Thin Film Solar Cell misc Alloy Film misc Alloy Thin Film
topic_browse	ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 misc Power Conversion Efficiency misc Ideality Factor misc Thin Film Solar Cell misc Alloy Film misc Alloy Thin Film
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	Journal of materials science
hierarchy_parent_id	317827154
dewey-tens	600 - Technology 670 - Manufacturing 620 - Engineering
hierarchy_top_title	Journal of materials science
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)317827154 (DE-600)2016994-2
title	Selenization of electrodeposited copper–indium alloy thin films for solar cell applications
ctrlnum	(DE-627)SPR013987771 (SPR)s10854-014-2217-3-e
title_full	Selenization of electrodeposited copper–indium alloy thin films for solar cell applications
author_sort	Londhe, Priyanka U.
journal	Journal of materials science
journalStr	Journal of materials science
lang_code	eng
isOA_bool	false
dewey-hundreds	600 - Technology
recordtype	marc
publishDateSort	2014
contenttype_str_mv	txt
container_start_page	4643
author_browse	Londhe, Priyanka U. Rohom, Ashwini B. Chaure, Nandu B.
container_volume	25
class	600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl
format_se	Elektronische Aufsätze
author-letter	Londhe, Priyanka U.
doi_str_mv	10.1007/s10854-014-2217-3
dewey-full	600 670 620
author2-role	verfasserin
title_sort	selenization of electrodeposited copper–indium alloy thin films for solar cell applications
title_auth	Selenization of electrodeposited copper–indium alloy thin films for solar cell applications
abstract	Abstract Copper–Indium (Cu–In) alloys with sulfur and selenium have technological importance in the development of thin film solar cell technology. We have used potentiostatic electrochemical technique with three-electrode geometry for the deposition of Cu–In alloy thin films in an aqueous electrolyte. Cathodic voltammetry (CV) was thoroughly studied to optimize the electrodeposition parameters. The deposition potential for Cu–In alloy was found to be in the range −0.70 to −0.85 V versus Ag/AgCl reference electrode. Polycrystalline $ Cu_{x} %$ In_{y} $ thin films were electrodeposited from aqueous bath at room temperature and 45 °C. Effect of concentration of citric acid was extensively studied by CV measurements. The as-deposited Cu–In films were characterized with a range of characterization techniques to study the structural, morphological, compositional and electrical properties. Thin layers of Cu–In were selenized in a homemade tubular furnace at 400 °C, which reveals the formation of polycrystalline $ CuInSe_{2} $ (CISe) thin films with tetragonal structure. The band gap of CISe thin film was estimated ~1.05 eV by optical absorption spectroscopy. Nearly stoichiometric CISe thin film, Cu = 25.25 %, In = 26.48 % and Se = 48.27 % was obtained after selenization. The linear behavior of current density–voltage (J–V) was observed for Cu–In alloy thin films whereas, the selenized Cu–In alloy films (CISe) possess rectifying properties.
abstractGer	Abstract Copper–Indium (Cu–In) alloys with sulfur and selenium have technological importance in the development of thin film solar cell technology. We have used potentiostatic electrochemical technique with three-electrode geometry for the deposition of Cu–In alloy thin films in an aqueous electrolyte. Cathodic voltammetry (CV) was thoroughly studied to optimize the electrodeposition parameters. The deposition potential for Cu–In alloy was found to be in the range −0.70 to −0.85 V versus Ag/AgCl reference electrode. Polycrystalline $ Cu_{x} %$ In_{y} $ thin films were electrodeposited from aqueous bath at room temperature and 45 °C. Effect of concentration of citric acid was extensively studied by CV measurements. The as-deposited Cu–In films were characterized with a range of characterization techniques to study the structural, morphological, compositional and electrical properties. Thin layers of Cu–In were selenized in a homemade tubular furnace at 400 °C, which reveals the formation of polycrystalline $ CuInSe_{2} $ (CISe) thin films with tetragonal structure. The band gap of CISe thin film was estimated ~1.05 eV by optical absorption spectroscopy. Nearly stoichiometric CISe thin film, Cu = 25.25 %, In = 26.48 % and Se = 48.27 % was obtained after selenization. The linear behavior of current density–voltage (J–V) was observed for Cu–In alloy thin films whereas, the selenized Cu–In alloy films (CISe) possess rectifying properties.
abstract_unstemmed	Abstract Copper–Indium (Cu–In) alloys with sulfur and selenium have technological importance in the development of thin film solar cell technology. We have used potentiostatic electrochemical technique with three-electrode geometry for the deposition of Cu–In alloy thin films in an aqueous electrolyte. Cathodic voltammetry (CV) was thoroughly studied to optimize the electrodeposition parameters. The deposition potential for Cu–In alloy was found to be in the range −0.70 to −0.85 V versus Ag/AgCl reference electrode. Polycrystalline $ Cu_{x} %$ In_{y} $ thin films were electrodeposited from aqueous bath at room temperature and 45 °C. Effect of concentration of citric acid was extensively studied by CV measurements. The as-deposited Cu–In films were characterized with a range of characterization techniques to study the structural, morphological, compositional and electrical properties. Thin layers of Cu–In were selenized in a homemade tubular furnace at 400 °C, which reveals the formation of polycrystalline $ CuInSe_{2} $ (CISe) thin films with tetragonal structure. The band gap of CISe thin film was estimated ~1.05 eV by optical absorption spectroscopy. Nearly stoichiometric CISe thin film, Cu = 25.25 %, In = 26.48 % and Se = 48.27 % was obtained after selenization. The linear behavior of current density–voltage (J–V) was observed for Cu–In alloy thin films whereas, the selenized Cu–In alloy films (CISe) possess rectifying properties.
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700
container_issue	10
title_short	Selenization of electrodeposited copper–indium alloy thin films for solar cell applications
url	https://dx.doi.org/10.1007/s10854-014-2217-3
remote_bool	true
author2	Rohom, Ashwini B. Chaure, Nandu B.
author2Str	Rohom, Ashwini B. Chaure, Nandu B.
ppnlink	317827154
mediatype_str_mv	c
isOA_txt	false
hochschulschrift_bool	false
doi_str	10.1007/s10854-014-2217-3
up_date	2024-07-03T23:27:03.099Z
_version_	1803602334177034240
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR013987771</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220111004525.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201006s2014 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10854-014-2217-3</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR013987771</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s10854-014-2217-3-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="a">670</subfield><subfield code="a">620</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.61</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.10</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.40</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.09</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Londhe, Priyanka U.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Selenization of electrodeposited copper–indium alloy thin films for solar cell applications</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2014</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Copper–Indium (Cu–In) alloys with sulfur and selenium have technological importance in the development of thin film solar cell technology. We have used potentiostatic electrochemical technique with three-electrode geometry for the deposition of Cu–In alloy thin films in an aqueous electrolyte. Cathodic voltammetry (CV) was thoroughly studied to optimize the electrodeposition parameters. The deposition potential for Cu–In alloy was found to be in the range −0.70 to −0.85 V versus Ag/AgCl reference electrode. Polycrystalline $ Cu_{x} %$ In_{y} $ thin films were electrodeposited from aqueous bath at room temperature and 45 °C. Effect of concentration of citric acid was extensively studied by CV measurements. The as-deposited Cu–In films were characterized with a range of characterization techniques to study the structural, morphological, compositional and electrical properties. Thin layers of Cu–In were selenized in a homemade tubular furnace at 400 °C, which reveals the formation of polycrystalline $ CuInSe_{2} $ (CISe) thin films with tetragonal structure. The band gap of CISe thin film was estimated ~1.05 eV by optical absorption spectroscopy. Nearly stoichiometric CISe thin film, Cu = 25.25 %, In = 26.48 % and Se = 48.27 % was obtained after selenization. The linear behavior of current density–voltage (J–V) was observed for Cu–In alloy thin films whereas, the selenized Cu–In alloy films (CISe) possess rectifying properties.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Power Conversion Efficiency</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ideality Factor</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Thin Film Solar Cell</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Alloy Film</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Alloy Thin Film</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Rohom, Ashwini B.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Chaure, Nandu B.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials science</subfield><subfield code="d">Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990</subfield><subfield code="g">25(2014), 10 vom: 02. Aug., Seite 4643-4649</subfield><subfield code="w">(DE-627)317827154</subfield><subfield code="w">(DE-600)2016994-2</subfield><subfield code="x">1573-482X</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:25</subfield><subfield code="g">year:2014</subfield><subfield code="g">number:10</subfield><subfield code="g">day:02</subfield><subfield code="g">month:08</subfield><subfield code="g">pages:4643-4649</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1007/s10854-014-2217-3</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_11</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_120</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_138</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_170</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_171</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_187</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_213</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_230</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_250</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_281</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_636</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2001</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2006</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2007</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2009</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2010</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2026</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2031</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2038</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2039</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2055</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2057</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2065</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2068</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2070</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2086</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2088</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2093</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2106</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2107</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2108</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2113</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2116</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2118</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2119</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2144</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2147</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2148</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2188</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2232</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2446</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2470</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2472</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2522</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2548</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4012</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4046</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4246</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4249</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4306</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4307</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4322</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4700</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.61</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">51.10</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">51.40</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">53.09</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">25</subfield><subfield code="j">2014</subfield><subfield code="e">10</subfield><subfield code="b">02</subfield><subfield code="c">08</subfield><subfield code="h">4643-4649</subfield></datafield></record></collection>
score	7.39927

Nicht das Richtige dabei?

Schreiben Sie uns!

Selenization of electrodeposited copper–indium alloy thin films for solar cell applications

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?