Significant modification to Bi-doped $ BaTiO_{3} $ by Sm in gaseous penetration process
Abstract Gaseous penetration technique was adopted to improve the electrical conductivity of pure $ BiTiO_{3} $ powders and Bi-doped $ BiTiO_{3} $ (BBT) powders and gel precursors, which were all prepared by sol–gel method. The effects of Sm-penetration on the structure and electrical conductivity o...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Wang, Fangwei [verfasserIn] Hao, Sue [verfasserIn] Li, Jialong [verfasserIn] Wang, Jiatao [verfasserIn] Gao, Yang [verfasserIn] Shen, Yunfeng [verfasserIn] Wang, Songyi [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2014 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990, 25(2014), 8 vom: 04. Juni, Seite 3543-3551 |
|---|---|
| Übergeordnetes Werk: |
volume:25 ; year:2014 ; number:8 ; day:04 ; month:06 ; pages:3543-3551 |
| Links: |
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| DOI / URN: |
10.1007/s10854-014-2054-4 |
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| Katalog-ID: |
SPR013994034 |
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| 520 | |a Abstract Gaseous penetration technique was adopted to improve the electrical conductivity of pure $ BiTiO_{3} $ powders and Bi-doped $ BiTiO_{3} $ (BBT) powders and gel precursors, which were all prepared by sol–gel method. The effects of Sm-penetration on the structure and electrical conductivity of BBT powders and gel precursors were investigated. It was observed that Sm-penetration had a very significant influence in decreasing the resistivity of the $ BaTiO_{3} $ based materials, especially for Sm-penetrated BBT gel precursors (SBBT-G) whose resistivity can reach to the lowest point of 2.15 Ωm. The dielectric properties of the $ BaTiO_{3} $ based materials has been investigated and revealed that dielectric constant of SBBT-G was negative while the dielectric loss increased to an extremely high value which was distinguished from Sm-penetrated BBT powders (SBBT-P). The temperature dependence of resistivity (R–T) of SBBT-P and SBBT-G was found to obey the Arrhenius law with activation energy calculated, respectively. These results together with the resistivity and frequency (R–F) relationship curve have shown the metallization transition of SBBT-G is obvious, which has a promising applied future. Through X-ray diffraction and Scanning electron microscope, we detected that all $ BaTiO_{3} $ based materials presented typical perovskite structure and the average grain size of SBBT-G was smaller and more uniform than that of SBBT-P. | ||
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| 650 | 4 | |a Penetration Process |7 (dpeaa)DE-He213 | |
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| 700 | 1 | |a Gao, Yang |e verfasserin |4 aut | |
| 700 | 1 | |a Shen, Yunfeng |e verfasserin |4 aut | |
| 700 | 1 | |a Wang, Songyi |e verfasserin |4 aut | |
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10.1007/s10854-014-2054-4 doi (DE-627)SPR013994034 (SPR)s10854-014-2054-4-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Wang, Fangwei verfasserin aut Significant modification to Bi-doped $ BaTiO_{3} $ by Sm in gaseous penetration process 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Gaseous penetration technique was adopted to improve the electrical conductivity of pure $ BiTiO_{3} $ powders and Bi-doped $ BiTiO_{3} $ (BBT) powders and gel precursors, which were all prepared by sol–gel method. The effects of Sm-penetration on the structure and electrical conductivity of BBT powders and gel precursors were investigated. It was observed that Sm-penetration had a very significant influence in decreasing the resistivity of the $ BaTiO_{3} $ based materials, especially for Sm-penetrated BBT gel precursors (SBBT-G) whose resistivity can reach to the lowest point of 2.15 Ωm. The dielectric properties of the $ BaTiO_{3} $ based materials has been investigated and revealed that dielectric constant of SBBT-G was negative while the dielectric loss increased to an extremely high value which was distinguished from Sm-penetrated BBT powders (SBBT-P). The temperature dependence of resistivity (R–T) of SBBT-P and SBBT-G was found to obey the Arrhenius law with activation energy calculated, respectively. These results together with the resistivity and frequency (R–F) relationship curve have shown the metallization transition of SBBT-G is obvious, which has a promising applied future. Through X-ray diffraction and Scanning electron microscope, we detected that all $ BaTiO_{3} $ based materials presented typical perovskite structure and the average grain size of SBBT-G was smaller and more uniform than that of SBBT-P. Dielectric Property (dpeaa)DE-He213 Dielectric Loss (dpeaa)DE-He213 BaTiO3 (dpeaa)DE-He213 Boundary Resistance (dpeaa)DE-He213 Penetration Process (dpeaa)DE-He213 Hao, Sue verfasserin aut Li, Jialong verfasserin aut Wang, Jiatao verfasserin aut Gao, Yang verfasserin aut Shen, Yunfeng verfasserin aut Wang, Songyi verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 25(2014), 8 vom: 04. Juni, Seite 3543-3551 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:25 year:2014 number:8 day:04 month:06 pages:3543-3551 https://dx.doi.org/10.1007/s10854-014-2054-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 25 2014 8 04 06 3543-3551 |
| spelling |
10.1007/s10854-014-2054-4 doi (DE-627)SPR013994034 (SPR)s10854-014-2054-4-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Wang, Fangwei verfasserin aut Significant modification to Bi-doped $ BaTiO_{3} $ by Sm in gaseous penetration process 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Gaseous penetration technique was adopted to improve the electrical conductivity of pure $ BiTiO_{3} $ powders and Bi-doped $ BiTiO_{3} $ (BBT) powders and gel precursors, which were all prepared by sol–gel method. The effects of Sm-penetration on the structure and electrical conductivity of BBT powders and gel precursors were investigated. It was observed that Sm-penetration had a very significant influence in decreasing the resistivity of the $ BaTiO_{3} $ based materials, especially for Sm-penetrated BBT gel precursors (SBBT-G) whose resistivity can reach to the lowest point of 2.15 Ωm. The dielectric properties of the $ BaTiO_{3} $ based materials has been investigated and revealed that dielectric constant of SBBT-G was negative while the dielectric loss increased to an extremely high value which was distinguished from Sm-penetrated BBT powders (SBBT-P). The temperature dependence of resistivity (R–T) of SBBT-P and SBBT-G was found to obey the Arrhenius law with activation energy calculated, respectively. These results together with the resistivity and frequency (R–F) relationship curve have shown the metallization transition of SBBT-G is obvious, which has a promising applied future. Through X-ray diffraction and Scanning electron microscope, we detected that all $ BaTiO_{3} $ based materials presented typical perovskite structure and the average grain size of SBBT-G was smaller and more uniform than that of SBBT-P. Dielectric Property (dpeaa)DE-He213 Dielectric Loss (dpeaa)DE-He213 BaTiO3 (dpeaa)DE-He213 Boundary Resistance (dpeaa)DE-He213 Penetration Process (dpeaa)DE-He213 Hao, Sue verfasserin aut Li, Jialong verfasserin aut Wang, Jiatao verfasserin aut Gao, Yang verfasserin aut Shen, Yunfeng verfasserin aut Wang, Songyi verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 25(2014), 8 vom: 04. Juni, Seite 3543-3551 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:25 year:2014 number:8 day:04 month:06 pages:3543-3551 https://dx.doi.org/10.1007/s10854-014-2054-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 25 2014 8 04 06 3543-3551 |
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10.1007/s10854-014-2054-4 doi (DE-627)SPR013994034 (SPR)s10854-014-2054-4-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Wang, Fangwei verfasserin aut Significant modification to Bi-doped $ BaTiO_{3} $ by Sm in gaseous penetration process 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Gaseous penetration technique was adopted to improve the electrical conductivity of pure $ BiTiO_{3} $ powders and Bi-doped $ BiTiO_{3} $ (BBT) powders and gel precursors, which were all prepared by sol–gel method. The effects of Sm-penetration on the structure and electrical conductivity of BBT powders and gel precursors were investigated. It was observed that Sm-penetration had a very significant influence in decreasing the resistivity of the $ BaTiO_{3} $ based materials, especially for Sm-penetrated BBT gel precursors (SBBT-G) whose resistivity can reach to the lowest point of 2.15 Ωm. The dielectric properties of the $ BaTiO_{3} $ based materials has been investigated and revealed that dielectric constant of SBBT-G was negative while the dielectric loss increased to an extremely high value which was distinguished from Sm-penetrated BBT powders (SBBT-P). The temperature dependence of resistivity (R–T) of SBBT-P and SBBT-G was found to obey the Arrhenius law with activation energy calculated, respectively. These results together with the resistivity and frequency (R–F) relationship curve have shown the metallization transition of SBBT-G is obvious, which has a promising applied future. Through X-ray diffraction and Scanning electron microscope, we detected that all $ BaTiO_{3} $ based materials presented typical perovskite structure and the average grain size of SBBT-G was smaller and more uniform than that of SBBT-P. Dielectric Property (dpeaa)DE-He213 Dielectric Loss (dpeaa)DE-He213 BaTiO3 (dpeaa)DE-He213 Boundary Resistance (dpeaa)DE-He213 Penetration Process (dpeaa)DE-He213 Hao, Sue verfasserin aut Li, Jialong verfasserin aut Wang, Jiatao verfasserin aut Gao, Yang verfasserin aut Shen, Yunfeng verfasserin aut Wang, Songyi verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 25(2014), 8 vom: 04. Juni, Seite 3543-3551 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:25 year:2014 number:8 day:04 month:06 pages:3543-3551 https://dx.doi.org/10.1007/s10854-014-2054-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 25 2014 8 04 06 3543-3551 |
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10.1007/s10854-014-2054-4 doi (DE-627)SPR013994034 (SPR)s10854-014-2054-4-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Wang, Fangwei verfasserin aut Significant modification to Bi-doped $ BaTiO_{3} $ by Sm in gaseous penetration process 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Gaseous penetration technique was adopted to improve the electrical conductivity of pure $ BiTiO_{3} $ powders and Bi-doped $ BiTiO_{3} $ (BBT) powders and gel precursors, which were all prepared by sol–gel method. The effects of Sm-penetration on the structure and electrical conductivity of BBT powders and gel precursors were investigated. It was observed that Sm-penetration had a very significant influence in decreasing the resistivity of the $ BaTiO_{3} $ based materials, especially for Sm-penetrated BBT gel precursors (SBBT-G) whose resistivity can reach to the lowest point of 2.15 Ωm. The dielectric properties of the $ BaTiO_{3} $ based materials has been investigated and revealed that dielectric constant of SBBT-G was negative while the dielectric loss increased to an extremely high value which was distinguished from Sm-penetrated BBT powders (SBBT-P). The temperature dependence of resistivity (R–T) of SBBT-P and SBBT-G was found to obey the Arrhenius law with activation energy calculated, respectively. These results together with the resistivity and frequency (R–F) relationship curve have shown the metallization transition of SBBT-G is obvious, which has a promising applied future. Through X-ray diffraction and Scanning electron microscope, we detected that all $ BaTiO_{3} $ based materials presented typical perovskite structure and the average grain size of SBBT-G was smaller and more uniform than that of SBBT-P. Dielectric Property (dpeaa)DE-He213 Dielectric Loss (dpeaa)DE-He213 BaTiO3 (dpeaa)DE-He213 Boundary Resistance (dpeaa)DE-He213 Penetration Process (dpeaa)DE-He213 Hao, Sue verfasserin aut Li, Jialong verfasserin aut Wang, Jiatao verfasserin aut Gao, Yang verfasserin aut Shen, Yunfeng verfasserin aut Wang, Songyi verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 25(2014), 8 vom: 04. Juni, Seite 3543-3551 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:25 year:2014 number:8 day:04 month:06 pages:3543-3551 https://dx.doi.org/10.1007/s10854-014-2054-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 25 2014 8 04 06 3543-3551 |
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10.1007/s10854-014-2054-4 doi (DE-627)SPR013994034 (SPR)s10854-014-2054-4-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Wang, Fangwei verfasserin aut Significant modification to Bi-doped $ BaTiO_{3} $ by Sm in gaseous penetration process 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Gaseous penetration technique was adopted to improve the electrical conductivity of pure $ BiTiO_{3} $ powders and Bi-doped $ BiTiO_{3} $ (BBT) powders and gel precursors, which were all prepared by sol–gel method. The effects of Sm-penetration on the structure and electrical conductivity of BBT powders and gel precursors were investigated. It was observed that Sm-penetration had a very significant influence in decreasing the resistivity of the $ BaTiO_{3} $ based materials, especially for Sm-penetrated BBT gel precursors (SBBT-G) whose resistivity can reach to the lowest point of 2.15 Ωm. The dielectric properties of the $ BaTiO_{3} $ based materials has been investigated and revealed that dielectric constant of SBBT-G was negative while the dielectric loss increased to an extremely high value which was distinguished from Sm-penetrated BBT powders (SBBT-P). The temperature dependence of resistivity (R–T) of SBBT-P and SBBT-G was found to obey the Arrhenius law with activation energy calculated, respectively. These results together with the resistivity and frequency (R–F) relationship curve have shown the metallization transition of SBBT-G is obvious, which has a promising applied future. Through X-ray diffraction and Scanning electron microscope, we detected that all $ BaTiO_{3} $ based materials presented typical perovskite structure and the average grain size of SBBT-G was smaller and more uniform than that of SBBT-P. Dielectric Property (dpeaa)DE-He213 Dielectric Loss (dpeaa)DE-He213 BaTiO3 (dpeaa)DE-He213 Boundary Resistance (dpeaa)DE-He213 Penetration Process (dpeaa)DE-He213 Hao, Sue verfasserin aut Li, Jialong verfasserin aut Wang, Jiatao verfasserin aut Gao, Yang verfasserin aut Shen, Yunfeng verfasserin aut Wang, Songyi verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 25(2014), 8 vom: 04. Juni, Seite 3543-3551 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:25 year:2014 number:8 day:04 month:06 pages:3543-3551 https://dx.doi.org/10.1007/s10854-014-2054-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 25 2014 8 04 06 3543-3551 |
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Enthalten in Journal of materials science 25(2014), 8 vom: 04. Juni, Seite 3543-3551 volume:25 year:2014 number:8 day:04 month:06 pages:3543-3551 |
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Enthalten in Journal of materials science 25(2014), 8 vom: 04. Juni, Seite 3543-3551 volume:25 year:2014 number:8 day:04 month:06 pages:3543-3551 |
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Dielectric Property Dielectric Loss BaTiO3 Boundary Resistance Penetration Process |
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Wang, Fangwei @@aut@@ Hao, Sue @@aut@@ Li, Jialong @@aut@@ Wang, Jiatao @@aut@@ Gao, Yang @@aut@@ Shen, Yunfeng @@aut@@ Wang, Songyi @@aut@@ |
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2014-06-04T00:00:00Z |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR013994034</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220111004522.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201006s2014 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10854-014-2054-4</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR013994034</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s10854-014-2054-4-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="a">670</subfield><subfield code="a">620</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.61</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.10</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.40</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.09</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Wang, Fangwei</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Significant modification to Bi-doped $ BaTiO_{3} $ by Sm in gaseous penetration process</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2014</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Gaseous penetration technique was adopted to improve the electrical conductivity of pure $ BiTiO_{3} $ powders and Bi-doped $ BiTiO_{3} $ (BBT) powders and gel precursors, which were all prepared by sol–gel method. The effects of Sm-penetration on the structure and electrical conductivity of BBT powders and gel precursors were investigated. It was observed that Sm-penetration had a very significant influence in decreasing the resistivity of the $ BaTiO_{3} $ based materials, especially for Sm-penetrated BBT gel precursors (SBBT-G) whose resistivity can reach to the lowest point of 2.15 Ωm. The dielectric properties of the $ BaTiO_{3} $ based materials has been investigated and revealed that dielectric constant of SBBT-G was negative while the dielectric loss increased to an extremely high value which was distinguished from Sm-penetrated BBT powders (SBBT-P). The temperature dependence of resistivity (R–T) of SBBT-P and SBBT-G was found to obey the Arrhenius law with activation energy calculated, respectively. These results together with the resistivity and frequency (R–F) relationship curve have shown the metallization transition of SBBT-G is obvious, which has a promising applied future. Through X-ray diffraction and Scanning electron microscope, we detected that all $ BaTiO_{3} $ based materials presented typical perovskite structure and the average grain size of SBBT-G was smaller and more uniform than that of SBBT-P.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Dielectric Property</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Dielectric Loss</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">BaTiO3</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Boundary Resistance</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Penetration Process</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hao, Sue</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Jialong</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Jiatao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Gao, Yang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Shen, Yunfeng</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Songyi</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials science</subfield><subfield code="d">Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990</subfield><subfield code="g">25(2014), 8 vom: 04. 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Wang, Fangwei |
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Wang, Fangwei ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 misc Dielectric Property misc Dielectric Loss misc BaTiO3 misc Boundary Resistance misc Penetration Process Significant modification to Bi-doped $ BaTiO_{3} $ by Sm in gaseous penetration process |
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Wang, Fangwei |
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600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Significant modification to Bi-doped $ BaTiO_{3} $ by Sm in gaseous penetration process Dielectric Property (dpeaa)DE-He213 Dielectric Loss (dpeaa)DE-He213 BaTiO3 (dpeaa)DE-He213 Boundary Resistance (dpeaa)DE-He213 Penetration Process (dpeaa)DE-He213 |
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ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 misc Dielectric Property misc Dielectric Loss misc BaTiO3 misc Boundary Resistance misc Penetration Process |
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ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 misc Dielectric Property misc Dielectric Loss misc BaTiO3 misc Boundary Resistance misc Penetration Process |
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ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 misc Dielectric Property misc Dielectric Loss misc BaTiO3 misc Boundary Resistance misc Penetration Process |
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Significant modification to Bi-doped $ BaTiO_{3} $ by Sm in gaseous penetration process |
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Significant modification to Bi-doped $ BaTiO_{3} $ by Sm in gaseous penetration process |
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Wang, Fangwei |
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Journal of materials science |
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Journal of materials science |
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Wang, Fangwei Hao, Sue Li, Jialong Wang, Jiatao Gao, Yang Shen, Yunfeng Wang, Songyi |
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600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl |
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Elektronische Aufsätze |
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Wang, Fangwei |
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10.1007/s10854-014-2054-4 |
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600 670 620 |
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verfasserin |
| title_sort |
significant modification to bi-doped $ batio_{3} $ by sm in gaseous penetration process |
| title_auth |
Significant modification to Bi-doped $ BaTiO_{3} $ by Sm in gaseous penetration process |
| abstract |
Abstract Gaseous penetration technique was adopted to improve the electrical conductivity of pure $ BiTiO_{3} $ powders and Bi-doped $ BiTiO_{3} $ (BBT) powders and gel precursors, which were all prepared by sol–gel method. The effects of Sm-penetration on the structure and electrical conductivity of BBT powders and gel precursors were investigated. It was observed that Sm-penetration had a very significant influence in decreasing the resistivity of the $ BaTiO_{3} $ based materials, especially for Sm-penetrated BBT gel precursors (SBBT-G) whose resistivity can reach to the lowest point of 2.15 Ωm. The dielectric properties of the $ BaTiO_{3} $ based materials has been investigated and revealed that dielectric constant of SBBT-G was negative while the dielectric loss increased to an extremely high value which was distinguished from Sm-penetrated BBT powders (SBBT-P). The temperature dependence of resistivity (R–T) of SBBT-P and SBBT-G was found to obey the Arrhenius law with activation energy calculated, respectively. These results together with the resistivity and frequency (R–F) relationship curve have shown the metallization transition of SBBT-G is obvious, which has a promising applied future. Through X-ray diffraction and Scanning electron microscope, we detected that all $ BaTiO_{3} $ based materials presented typical perovskite structure and the average grain size of SBBT-G was smaller and more uniform than that of SBBT-P. |
| abstractGer |
Abstract Gaseous penetration technique was adopted to improve the electrical conductivity of pure $ BiTiO_{3} $ powders and Bi-doped $ BiTiO_{3} $ (BBT) powders and gel precursors, which were all prepared by sol–gel method. The effects of Sm-penetration on the structure and electrical conductivity of BBT powders and gel precursors were investigated. It was observed that Sm-penetration had a very significant influence in decreasing the resistivity of the $ BaTiO_{3} $ based materials, especially for Sm-penetrated BBT gel precursors (SBBT-G) whose resistivity can reach to the lowest point of 2.15 Ωm. The dielectric properties of the $ BaTiO_{3} $ based materials has been investigated and revealed that dielectric constant of SBBT-G was negative while the dielectric loss increased to an extremely high value which was distinguished from Sm-penetrated BBT powders (SBBT-P). The temperature dependence of resistivity (R–T) of SBBT-P and SBBT-G was found to obey the Arrhenius law with activation energy calculated, respectively. These results together with the resistivity and frequency (R–F) relationship curve have shown the metallization transition of SBBT-G is obvious, which has a promising applied future. Through X-ray diffraction and Scanning electron microscope, we detected that all $ BaTiO_{3} $ based materials presented typical perovskite structure and the average grain size of SBBT-G was smaller and more uniform than that of SBBT-P. |
| abstract_unstemmed |
Abstract Gaseous penetration technique was adopted to improve the electrical conductivity of pure $ BiTiO_{3} $ powders and Bi-doped $ BiTiO_{3} $ (BBT) powders and gel precursors, which were all prepared by sol–gel method. The effects of Sm-penetration on the structure and electrical conductivity of BBT powders and gel precursors were investigated. It was observed that Sm-penetration had a very significant influence in decreasing the resistivity of the $ BaTiO_{3} $ based materials, especially for Sm-penetrated BBT gel precursors (SBBT-G) whose resistivity can reach to the lowest point of 2.15 Ωm. The dielectric properties of the $ BaTiO_{3} $ based materials has been investigated and revealed that dielectric constant of SBBT-G was negative while the dielectric loss increased to an extremely high value which was distinguished from Sm-penetrated BBT powders (SBBT-P). The temperature dependence of resistivity (R–T) of SBBT-P and SBBT-G was found to obey the Arrhenius law with activation energy calculated, respectively. These results together with the resistivity and frequency (R–F) relationship curve have shown the metallization transition of SBBT-G is obvious, which has a promising applied future. Through X-ray diffraction and Scanning electron microscope, we detected that all $ BaTiO_{3} $ based materials presented typical perovskite structure and the average grain size of SBBT-G was smaller and more uniform than that of SBBT-P. |
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Significant modification to Bi-doped $ BaTiO_{3} $ by Sm in gaseous penetration process |
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Hao, Sue Li, Jialong Wang, Jiatao Gao, Yang Shen, Yunfeng Wang, Songyi |
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| score |
7.401189 |