Structural and optical investigation of $ Cd_{4} %$ Se_{96−x} %$ S_{x} $ (x = 4, 8, 12) chalcogenide thin films

Abstract $ Cd_{4} %$ Se_{96−x} %$ S_{x} $ with x = 4, 8, 12 chalcogenide semiconductor has been prepared by melt-quenching technique. Thin films were deposited by thermal evaporation technique on ultra clean glass substrates under a high vacuum of $ 10^{−6} $ Torr and were characterized by XRD, SEM,...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Ganaie, Mohsin [verfasserIn] Zulfequar, M. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2015

Schlagwörter:	Selenium Dark Conductivity Sulfur Lead Chalcogenide Semiconductor Thermal Evaporation Technique

Übergeordnetes Werk:	Enthalten in: Journal of materials science - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990, 26(2015), 7 vom: 07. Mai, Seite 4816-4822
Übergeordnetes Werk:	volume:26 ; year:2015 ; number:7 ; day:07 ; month:05 ; pages:4816-4822

Links:	Volltext

DOI / URN:	10.1007/s10854-015-3148-3

Katalog-ID:	SPR014007347

Internformat


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520			\|a Abstract $ Cd_{4} %$ Se_{96−x} %$ S_{x} $ with x = 4, 8, 12 chalcogenide semiconductor has been prepared by melt-quenching technique. Thin films were deposited by thermal evaporation technique on ultra clean glass substrates under a high vacuum of $ 10^{−6} $ Torr and were characterized by XRD, SEM, FTIR and Raman spectroscopy. XRD confirms the prepared films are in nanoscale region having polycrystalline nature with preferred orientation along (002) plan. Optical properties (optical band gap, absorption coefficient, extinction coefficient, refractive index) were investigated in the frequency range of 190–1100 nm. Analysis of the optical measurement shows that the non-direct transition is dominant. It is observed that the optical band gap increase with sulfur (S) concentration. The Dark conductivity as a function of temperature in the temperature range 300–390 K was investigated, which shows that it is thermally activated process. The conductivity increases on the incorporation of Sulfur content, which may be due to shift in Fermi level.
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650		4	\|a Thermal Evaporation Technique \|7 (dpeaa)DE-He213
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912			\|a GBV_ILN_110
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912			\|a GBV_ILN_151
912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_250
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2031
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2039
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2070
912			\|a GBV_ILN_2086
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2107
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2116
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2119
912			\|a GBV_ILN_2122
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912			\|a GBV_ILN_2143
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912			\|a GBV_ILN_4338
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matchkey_str	article:1573482X:2015----::tutrlnotclnetgtooc_s_6sx41c
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bklnumber	33.61 51.10 51.40 53.09
publishDate	2015
allfields	10.1007/s10854-015-3148-3 doi (DE-627)SPR014007347 (SPR)s10854-015-3148-3-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Ganaie, Mohsin verfasserin aut Structural and optical investigation of $ Cd_{4} %$ Se_{96−x} %$ S_{x} $ (x = 4, 8, 12) chalcogenide thin films 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract $ Cd_{4} %$ Se_{96−x} %$ S_{x} $ with x = 4, 8, 12 chalcogenide semiconductor has been prepared by melt-quenching technique. Thin films were deposited by thermal evaporation technique on ultra clean glass substrates under a high vacuum of $ 10^{−6} $ Torr and were characterized by XRD, SEM, FTIR and Raman spectroscopy. XRD confirms the prepared films are in nanoscale region having polycrystalline nature with preferred orientation along (002) plan. Optical properties (optical band gap, absorption coefficient, extinction coefficient, refractive index) were investigated in the frequency range of 190–1100 nm. Analysis of the optical measurement shows that the non-direct transition is dominant. It is observed that the optical band gap increase with sulfur (S) concentration. The Dark conductivity as a function of temperature in the temperature range 300–390 K was investigated, which shows that it is thermally activated process. The conductivity increases on the incorporation of Sulfur content, which may be due to shift in Fermi level. Selenium (dpeaa)DE-He213 Dark Conductivity (dpeaa)DE-He213 Sulfur Lead (dpeaa)DE-He213 Chalcogenide Semiconductor (dpeaa)DE-He213 Thermal Evaporation Technique (dpeaa)DE-He213 Zulfequar, M. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 26(2015), 7 vom: 07. Mai, Seite 4816-4822 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:26 year:2015 number:7 day:07 month:05 pages:4816-4822 https://dx.doi.org/10.1007/s10854-015-3148-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 26 2015 7 07 05 4816-4822
spelling	10.1007/s10854-015-3148-3 doi (DE-627)SPR014007347 (SPR)s10854-015-3148-3-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Ganaie, Mohsin verfasserin aut Structural and optical investigation of $ Cd_{4} %$ Se_{96−x} %$ S_{x} $ (x = 4, 8, 12) chalcogenide thin films 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract $ Cd_{4} %$ Se_{96−x} %$ S_{x} $ with x = 4, 8, 12 chalcogenide semiconductor has been prepared by melt-quenching technique. Thin films were deposited by thermal evaporation technique on ultra clean glass substrates under a high vacuum of $ 10^{−6} $ Torr and were characterized by XRD, SEM, FTIR and Raman spectroscopy. XRD confirms the prepared films are in nanoscale region having polycrystalline nature with preferred orientation along (002) plan. Optical properties (optical band gap, absorption coefficient, extinction coefficient, refractive index) were investigated in the frequency range of 190–1100 nm. Analysis of the optical measurement shows that the non-direct transition is dominant. It is observed that the optical band gap increase with sulfur (S) concentration. The Dark conductivity as a function of temperature in the temperature range 300–390 K was investigated, which shows that it is thermally activated process. The conductivity increases on the incorporation of Sulfur content, which may be due to shift in Fermi level. Selenium (dpeaa)DE-He213 Dark Conductivity (dpeaa)DE-He213 Sulfur Lead (dpeaa)DE-He213 Chalcogenide Semiconductor (dpeaa)DE-He213 Thermal Evaporation Technique (dpeaa)DE-He213 Zulfequar, M. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 26(2015), 7 vom: 07. Mai, Seite 4816-4822 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:26 year:2015 number:7 day:07 month:05 pages:4816-4822 https://dx.doi.org/10.1007/s10854-015-3148-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 26 2015 7 07 05 4816-4822
allfields_unstemmed	10.1007/s10854-015-3148-3 doi (DE-627)SPR014007347 (SPR)s10854-015-3148-3-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Ganaie, Mohsin verfasserin aut Structural and optical investigation of $ Cd_{4} %$ Se_{96−x} %$ S_{x} $ (x = 4, 8, 12) chalcogenide thin films 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract $ Cd_{4} %$ Se_{96−x} %$ S_{x} $ with x = 4, 8, 12 chalcogenide semiconductor has been prepared by melt-quenching technique. Thin films were deposited by thermal evaporation technique on ultra clean glass substrates under a high vacuum of $ 10^{−6} $ Torr and were characterized by XRD, SEM, FTIR and Raman spectroscopy. XRD confirms the prepared films are in nanoscale region having polycrystalline nature with preferred orientation along (002) plan. Optical properties (optical band gap, absorption coefficient, extinction coefficient, refractive index) were investigated in the frequency range of 190–1100 nm. Analysis of the optical measurement shows that the non-direct transition is dominant. It is observed that the optical band gap increase with sulfur (S) concentration. The Dark conductivity as a function of temperature in the temperature range 300–390 K was investigated, which shows that it is thermally activated process. The conductivity increases on the incorporation of Sulfur content, which may be due to shift in Fermi level. Selenium (dpeaa)DE-He213 Dark Conductivity (dpeaa)DE-He213 Sulfur Lead (dpeaa)DE-He213 Chalcogenide Semiconductor (dpeaa)DE-He213 Thermal Evaporation Technique (dpeaa)DE-He213 Zulfequar, M. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 26(2015), 7 vom: 07. Mai, Seite 4816-4822 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:26 year:2015 number:7 day:07 month:05 pages:4816-4822 https://dx.doi.org/10.1007/s10854-015-3148-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 26 2015 7 07 05 4816-4822
allfieldsGer	10.1007/s10854-015-3148-3 doi (DE-627)SPR014007347 (SPR)s10854-015-3148-3-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Ganaie, Mohsin verfasserin aut Structural and optical investigation of $ Cd_{4} %$ Se_{96−x} %$ S_{x} $ (x = 4, 8, 12) chalcogenide thin films 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract $ Cd_{4} %$ Se_{96−x} %$ S_{x} $ with x = 4, 8, 12 chalcogenide semiconductor has been prepared by melt-quenching technique. Thin films were deposited by thermal evaporation technique on ultra clean glass substrates under a high vacuum of $ 10^{−6} $ Torr and were characterized by XRD, SEM, FTIR and Raman spectroscopy. XRD confirms the prepared films are in nanoscale region having polycrystalline nature with preferred orientation along (002) plan. Optical properties (optical band gap, absorption coefficient, extinction coefficient, refractive index) were investigated in the frequency range of 190–1100 nm. Analysis of the optical measurement shows that the non-direct transition is dominant. It is observed that the optical band gap increase with sulfur (S) concentration. The Dark conductivity as a function of temperature in the temperature range 300–390 K was investigated, which shows that it is thermally activated process. The conductivity increases on the incorporation of Sulfur content, which may be due to shift in Fermi level. Selenium (dpeaa)DE-He213 Dark Conductivity (dpeaa)DE-He213 Sulfur Lead (dpeaa)DE-He213 Chalcogenide Semiconductor (dpeaa)DE-He213 Thermal Evaporation Technique (dpeaa)DE-He213 Zulfequar, M. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 26(2015), 7 vom: 07. Mai, Seite 4816-4822 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:26 year:2015 number:7 day:07 month:05 pages:4816-4822 https://dx.doi.org/10.1007/s10854-015-3148-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 26 2015 7 07 05 4816-4822
allfieldsSound	10.1007/s10854-015-3148-3 doi (DE-627)SPR014007347 (SPR)s10854-015-3148-3-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Ganaie, Mohsin verfasserin aut Structural and optical investigation of $ Cd_{4} %$ Se_{96−x} %$ S_{x} $ (x = 4, 8, 12) chalcogenide thin films 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract $ Cd_{4} %$ Se_{96−x} %$ S_{x} $ with x = 4, 8, 12 chalcogenide semiconductor has been prepared by melt-quenching technique. Thin films were deposited by thermal evaporation technique on ultra clean glass substrates under a high vacuum of $ 10^{−6} $ Torr and were characterized by XRD, SEM, FTIR and Raman spectroscopy. XRD confirms the prepared films are in nanoscale region having polycrystalline nature with preferred orientation along (002) plan. Optical properties (optical band gap, absorption coefficient, extinction coefficient, refractive index) were investigated in the frequency range of 190–1100 nm. Analysis of the optical measurement shows that the non-direct transition is dominant. It is observed that the optical band gap increase with sulfur (S) concentration. The Dark conductivity as a function of temperature in the temperature range 300–390 K was investigated, which shows that it is thermally activated process. The conductivity increases on the incorporation of Sulfur content, which may be due to shift in Fermi level. Selenium (dpeaa)DE-He213 Dark Conductivity (dpeaa)DE-He213 Sulfur Lead (dpeaa)DE-He213 Chalcogenide Semiconductor (dpeaa)DE-He213 Thermal Evaporation Technique (dpeaa)DE-He213 Zulfequar, M. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 26(2015), 7 vom: 07. Mai, Seite 4816-4822 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:26 year:2015 number:7 day:07 month:05 pages:4816-4822 https://dx.doi.org/10.1007/s10854-015-3148-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 26 2015 7 07 05 4816-4822
language	English
source	Enthalten in Journal of materials science 26(2015), 7 vom: 07. Mai, Seite 4816-4822 volume:26 year:2015 number:7 day:07 month:05 pages:4816-4822
sourceStr	Enthalten in Journal of materials science 26(2015), 7 vom: 07. Mai, Seite 4816-4822 volume:26 year:2015 number:7 day:07 month:05 pages:4816-4822
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Selenium Dark Conductivity Sulfur Lead Chalcogenide Semiconductor Thermal Evaporation Technique
dewey-raw	600
isfreeaccess_bool	false
container_title	Journal of materials science
authorswithroles_txt_mv	Ganaie, Mohsin @@aut@@ Zulfequar, M. @@aut@@
publishDateDaySort_date	2015-05-07T00:00:00Z
hierarchy_top_id	317827154
dewey-sort	3600
id	SPR014007347
language_de	englisch
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author	Ganaie, Mohsin
spellingShingle	Ganaie, Mohsin ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 misc Selenium misc Dark Conductivity misc Sulfur Lead misc Chalcogenide Semiconductor misc Thermal Evaporation Technique Structural and optical investigation of $ Cd_{4} %$ Se_{96−x} %$ S_{x} $ (x = 4, 8, 12) chalcogenide thin films
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topic_title	600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Structural and optical investigation of $ Cd_{4} %$ Se_{96−x} %$ S_{x} $ (x = 4, 8, 12) chalcogenide thin films Selenium (dpeaa)DE-He213 Dark Conductivity (dpeaa)DE-He213 Sulfur Lead (dpeaa)DE-He213 Chalcogenide Semiconductor (dpeaa)DE-He213 Thermal Evaporation Technique (dpeaa)DE-He213
topic	ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 misc Selenium misc Dark Conductivity misc Sulfur Lead misc Chalcogenide Semiconductor misc Thermal Evaporation Technique
topic_unstemmed	ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 misc Selenium misc Dark Conductivity misc Sulfur Lead misc Chalcogenide Semiconductor misc Thermal Evaporation Technique
topic_browse	ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 misc Selenium misc Dark Conductivity misc Sulfur Lead misc Chalcogenide Semiconductor misc Thermal Evaporation Technique
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
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title	Structural and optical investigation of $ Cd_{4} %$ Se_{96−x} %$ S_{x} $ (x = 4, 8, 12) chalcogenide thin films
ctrlnum	(DE-627)SPR014007347 (SPR)s10854-015-3148-3-e
title_full	Structural and optical investigation of $ Cd_{4} %$ Se_{96−x} %$ S_{x} $ (x = 4, 8, 12) chalcogenide thin films
author_sort	Ganaie, Mohsin
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author_browse	Ganaie, Mohsin Zulfequar, M.
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author-letter	Ganaie, Mohsin
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title_sort	structural and optical investigation of $ cd_{4} %$ se_{96−x} %$ s_{x} $ (x = 4, 8, 12) chalcogenide thin films
title_auth	Structural and optical investigation of $ Cd_{4} %$ Se_{96−x} %$ S_{x} $ (x = 4, 8, 12) chalcogenide thin films
abstract	Abstract $ Cd_{4} %$ Se_{96−x} %$ S_{x} $ with x = 4, 8, 12 chalcogenide semiconductor has been prepared by melt-quenching technique. Thin films were deposited by thermal evaporation technique on ultra clean glass substrates under a high vacuum of $ 10^{−6} $ Torr and were characterized by XRD, SEM, FTIR and Raman spectroscopy. XRD confirms the prepared films are in nanoscale region having polycrystalline nature with preferred orientation along (002) plan. Optical properties (optical band gap, absorption coefficient, extinction coefficient, refractive index) were investigated in the frequency range of 190–1100 nm. Analysis of the optical measurement shows that the non-direct transition is dominant. It is observed that the optical band gap increase with sulfur (S) concentration. The Dark conductivity as a function of temperature in the temperature range 300–390 K was investigated, which shows that it is thermally activated process. The conductivity increases on the incorporation of Sulfur content, which may be due to shift in Fermi level.
abstractGer	Abstract $ Cd_{4} %$ Se_{96−x} %$ S_{x} $ with x = 4, 8, 12 chalcogenide semiconductor has been prepared by melt-quenching technique. Thin films were deposited by thermal evaporation technique on ultra clean glass substrates under a high vacuum of $ 10^{−6} $ Torr and were characterized by XRD, SEM, FTIR and Raman spectroscopy. XRD confirms the prepared films are in nanoscale region having polycrystalline nature with preferred orientation along (002) plan. Optical properties (optical band gap, absorption coefficient, extinction coefficient, refractive index) were investigated in the frequency range of 190–1100 nm. Analysis of the optical measurement shows that the non-direct transition is dominant. It is observed that the optical band gap increase with sulfur (S) concentration. The Dark conductivity as a function of temperature in the temperature range 300–390 K was investigated, which shows that it is thermally activated process. The conductivity increases on the incorporation of Sulfur content, which may be due to shift in Fermi level.
abstract_unstemmed	Abstract $ Cd_{4} %$ Se_{96−x} %$ S_{x} $ with x = 4, 8, 12 chalcogenide semiconductor has been prepared by melt-quenching technique. Thin films were deposited by thermal evaporation technique on ultra clean glass substrates under a high vacuum of $ 10^{−6} $ Torr and were characterized by XRD, SEM, FTIR and Raman spectroscopy. XRD confirms the prepared films are in nanoscale region having polycrystalline nature with preferred orientation along (002) plan. Optical properties (optical band gap, absorption coefficient, extinction coefficient, refractive index) were investigated in the frequency range of 190–1100 nm. Analysis of the optical measurement shows that the non-direct transition is dominant. It is observed that the optical band gap increase with sulfur (S) concentration. The Dark conductivity as a function of temperature in the temperature range 300–390 K was investigated, which shows that it is thermally activated process. The conductivity increases on the incorporation of Sulfur content, which may be due to shift in Fermi level.
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title_short	Structural and optical investigation of $ Cd_{4} %$ Se_{96−x} %$ S_{x} $ (x = 4, 8, 12) chalcogenide thin films
url	https://dx.doi.org/10.1007/s10854-015-3148-3
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Thin films were deposited by thermal evaporation technique on ultra clean glass substrates under a high vacuum of $ 10^{−6} $ Torr and were characterized by XRD, SEM, FTIR and Raman spectroscopy. XRD confirms the prepared films are in nanoscale region having polycrystalline nature with preferred orientation along (002) plan. Optical properties (optical band gap, absorption coefficient, extinction coefficient, refractive index) were investigated in the frequency range of 190–1100 nm. Analysis of the optical measurement shows that the non-direct transition is dominant. It is observed that the optical band gap increase with sulfur (S) concentration. The Dark conductivity as a function of temperature in the temperature range 300–390 K was investigated, which shows that it is thermally activated process. 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Structural and optical investigation of $ Cd_{4} %$ Se_{96−x} %$ S_{x} $ (x = 4, 8, 12) chalcogenide thin films

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